CN103682063B - LED of side view type encapsulating structure and its manufacture method - Google Patents
LED of side view type encapsulating structure and its manufacture method Download PDFInfo
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- CN103682063B CN103682063B CN201210314529.1A CN201210314529A CN103682063B CN 103682063 B CN103682063 B CN 103682063B CN 201210314529 A CN201210314529 A CN 201210314529A CN 103682063 B CN103682063 B CN 103682063B
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 62
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 230000005611 electricity Effects 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 claims 1
- 238000005253 cladding Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002632 lipids Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
A kind of manufacture method of LED of side view type encapsulating structure, including step：There is provided the circuit board being equiped with multiple row first, second electrode, described first, second electrode is concatenated by connection strap, the contrary two ends of first, second electrode stretch out to form first, second and connect and draw electrode；Form cladding first, second electrode and comprise the resin bed of reflector, first, second connects and draw the opposite sides that electrode is exposed to resin bed；Light-emitting diode chip for backlight unit is set in the bottom of reflector and electrically connects first, second electrode；Encapsulated layer covering luminousing diode chip is filled in reflector；Transverse cuts resin bed and connection strap form multiple independent LED of side view type encapsulating structures.The invention still further relates to a kind of LED of side view type encapsulating structure being obtained by the method.In the present invention, the resin bed of package structure for LED with described first, second connect draw electrode side keep at a certain distance away setting with formed house scolding tin space.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly to a kind of encapsulation knot of LED of side view type
Structure and its manufacture method.
Background technology
Light emitting diode（Light emitting diode, LED）As a kind of efficient luminous source, there is environmental protection, province
The various features such as electricity, life-span length have widely been applied to various fields.
Before being applied in specific field, light emitting diode also needs to be packaged, to protect light-emitting diode chip for backlight unit,
Thus obtaining higher luminous efficiency and longer service life.
In top emission type package structure for LED, generally by being arranged at electrode and the external circuit of its bottom
Structure electrically connects, to provide this electric energy needed for type package structure for LED work of top.
Compared to top emission type package structure for LED, LED of side view type encapsulating structure passes through to set
The electrode being placed on its side wall is electrically connected with external circuit structure, and this can effectively reduce LED of side view type encapsulation knot
The integral thickness of structure.LED of side view type is widely used in display imaging field, particularly in backlight module
LED of side view type uses frequently as the backlight of backlight module with effective integral thickness reducing backlight module.
LED of side view type encapsulating structure generally include spaced first electrode and second electrode, around
This first electrode and second electrode setting reflector, be arranged at this reflector bottom and respectively with first electrode and second electrode
The light-emitting diode chip for backlight unit of electrical connection and the encapsulated layer being placed in simultaneously covering luminousing diode chip in this reflector.Described
The opposite end of one electrode and second electrode protrudes out to the opposite sides of reflector respectively.
Described LED of side view type encapsulating structure is to be fixed on printed circuit board (PCB) by way of welding mostly
On, the first electrode of this LED of side view type and the protruding end of the second electrode electricity by scolding tin and printed circuit board (PCB)
Line structure electrically connects.
Due in this LED of side view type encapsulating structure, contrary two of this first electrode and second electrode
End protrudes out from the opposite sides of reflector respectively, and this first electrode is used for and printed circuit board (PCB) weldering with the end of second electrode
The side connecing is used for flushing with the side that printed circuit board (PCB) is sticked with reflector, and in the middle of welding process, scolding tin is only capable of first
Form very thin one layer between the welding side of electrode and second electrode and printed circuit board surface, thus rosin joint easily occurs
Phenomenon, and then lead to the bonding strength between this LED of side view type encapsulating structure and printed circuit board (PCB) to die down, when
Between long scolding tin will come off.
Content of the invention
In view of this it is necessary to provide a kind of bond strength preferably LED of side view type encapsulating structure.
A kind of manufacture method of LED of side view type encapsulating structure, including step：One is provided to be equiped with multiple row
First electrode and the circuit board of second electrode, described first electrode, the contrary two ends of second electrode stretch out respectively and are formed
First connects and draws electrode, second connects and draw electrode, and the first electrode of same column is longitudinally concatenated by connection strap, and the second electrode of same column is passed through
Connection strap longitudinally concatenates；Formed and coat described first electrode, the resin bed of second electrode, described resin bed comprises reflector, institute
State first and connect and draw electrode, second connect and draw the opposite sides that electrode is exposed to resin bed；In the bottom of reflector, light-emitting diodes are set
Die simultaneously electrically connects described first electrode, second electrode；Filling encapsulated layer covering luminousing diode chip in reflector；
And transverse cuts resin bed and connection strap form multiple independent LED of side view type encapsulating structures, each is only
The resin bed of vertical LED of side view type encapsulating structure includes the contact surface for contacting with printed circuit board (PCB), each
The first of individual independent LED of side view type encapsulating structure connects to draw electrode and second and connect to be drawn electrode and includes for welding
To the solder side of printed circuit board (PCB), solder side and contact surface form the space for housing scolding tin separated by a distance.
The present invention also provides a kind of LED of side view type encapsulating structure being obtained by this manufacture method.
A kind of LED of side view type encapsulating structure, is used for being installed on printed circuit board (PCB), including interval setting
First electrode and second electrode, coat this first electrode and second electrode and comprise reflector resin bed, be arranged at reflection
Cup bottom the light-emitting diode chip for backlight unit that electrically connects with first electrode and second electrode respectively and be placed in this reflector simultaneously
The encapsulated layer of covering luminousing diode chip, described package structure for LED also includes exposing to this resin bed opposite sides
First connect to draw electrode and second and connect and draw electrode, described first connect draw electrode and second connect draw electrode respectively by this first electrode and
Second electrode extends and is formed, and resin bed includes the contact surface for being sticked with printed circuit board (PCB), and first connects and draw electrode and second and connect
Draw electrode and include for the solder side with printed circuit plate weld, first connects and draw electrode and second and connect the solder side drawing electrode and tree
The contact surface of lipid layer be spaced apart and form the space for housing scolding tin.
In the present invention due to described first connect draw electrode and second connect draw the solder side of electrode and resin bed contact surface it
Spaced apart a certain distance, thus forming the space of a strip, this profile form package structure for LED is being welded in
When on printed circuit board (PCB), the contact surface of resin bed is contacted with the surface of printed circuit board (PCB), and first connects to draw electrode and second and connect and draw electricity
The solder side of pole is connected with the circuit on printed circuit board (PCB) by scolding tin.Due to the presence in space, in welding process, scolding tin can
Penetrating in this space, so that the thickness of scolding tin is increased, thus enhancing between this package structure for LED and printed circuit board (PCB)
Bonding strength.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Brief description
Fig. 1 is the generalized section of the LED of side view type encapsulating structure of one embodiment of the invention.
Fig. 2 is the schematic top plan view of LED of side view type encapsulating structure shown in Fig. 1.
Fig. 3 is the elevational schematic view of LED of side view type encapsulating structure shown in Fig. 1.
Fig. 4 is the right view of LED of side view type encapsulating structure shown in Fig. 1.
Fig. 5 is the manufacture method flow chart of the LED of side view type encapsulating structure of Fig. 1.
Fig. 6 is the electricity of the manufacture method step S101 gained of LED of side view type encapsulating structure shown in Fig. 5
The schematic top plan view of road plate.
Fig. 7 is the electricity of the manufacture method step S101 gained of LED of side view type encapsulating structure shown in Fig. 5
The generalized section of road plate.
Fig. 8 is sending out of the manufacture method step S102 gained of LED of side view type encapsulating structure shown in Fig. 5
Optical diode package structure schematic top plan view.
Fig. 9 is sending out of the manufacture method step S102 gained of LED of side view type encapsulating structure shown in Fig. 5
Optical diode package structure generalized section.
Figure 10 is sending out of the manufacture method step S103 gained of LED of side view type encapsulating structure shown in Fig. 5
Optical diode package structure generalized section.
Figure 11 is sending out of the manufacture method step S104 gained of LED of side view type encapsulating structure shown in Fig. 5
Optical diode package structure generalized section.
Figure 12 is sending out of the manufacture method step S105 gained of LED of side view type encapsulating structure shown in Fig. 5
Optical diode package structure schematic top plan view.
Main element symbol description
| Package structure for LED | 100 |
| First electrode | 10 |
| Body | 101、111 |
| Protuberance | 102、112 |
| Groove | 103、113 |
| Second electrode | 11 |
| First connects and draws electrode | 12 |
| Second connects and draws electrode | 13 |
| Groove | 14 |
| Resin bed | 20 |
| Reflector | 21 |
| Light-emitting diode chip for backlight unit | 30 |
| Wire | 31、32 |
| Encapsulated layer | 40 |
| Circuit board | 50 |
| Connection strap | 60 |
Following specific embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Specific embodiment
Please also refer to Fig. 1 to Fig. 4, the LED of side view type encapsulating structure 100 of first embodiment of the invention,
Including spaced first electrode 10 and second electrode 11, coat this first electrode 10 and second electrode 11 and comprise a reflection
Cup 21 resin bed 20, be arranged at reflector 21 bottom and electrically connect with first electrode 10 and second electrode 11 respectively light two
Pole pipe chip 30 and the encapsulated layer 40 being placed in simultaneously covering luminousing diode chip 30 in this reflector 21.
Described package structure for LED 100 also includes exposing to the first of this resin bed 20 opposite sides and connecing drawing electrode
12 and second connect and draw electrode 13, and described first connects to draw electrode 12 and second and connect and draw electrode 13 respectively by this first electrode 10 and second
The contrary two ends bending of electrode 11 extends and is formed.
The cross sectional shape of described first electrode 10 and second electrode 11 is in substantially " T " font.This first electrode 10 includes one
Body 101 and integrally extended by the direction that described body 101 side is directed away from this light-emitting diode chip for backlight unit 30
Protuberance 102.This body 101 is the flat board of a rectangle.This protuberance 102 is trapezoidal inversion terrace with edge for a cross sectional shape.
The direction that the size of this protuberance 102 is directed away from light-emitting diode chip for backlight unit 30 is gradually reduced.In the same manner, this second electrode 11 is wrapped
Include a body 111 and by described body 111 side be directed away from this light-emitting diode chip for backlight unit 30 direction one extend and
The protuberance 112 going out.This body 111 is the flat board of a rectangle.This protuberance 112 is trapezoidal inversion rib for a cross sectional shape
Platform.The direction that the size of this protuberance 112 is directed away from light-emitting diode chip for backlight unit 30 is gradually reduced.
Form a groove 14 between adjacent first electrode 10 and second electrode 11 and block this first electrode in order to insulating properties
10 and second electrode 11.The cross sectional shape of this groove 14 is in inverted funnel-form.Specifically, this groove 14 is by upper and lower two parts
Composition.The top half of this groove 14 is the groove of a strip, the groove of this strip by this first electrode 10 body 101 with
The body 111 of this second electrode 11 jointly encloses to set and forms.The latter half of this groove 14 is a cross sectional shape is trapezoidal recessed
Groove, this trapezoidal groove jointly enclosed by the protuberance 102 of this first electrode 10 and the protuberance 112 of this second electrode 11 set and
Become.The top half of this groove 14 and the latter half are interconnected.See on the whole, this groove 14 is tied along LED package
Structure 100 width transversely is up-narrow and down-wide, and the closer to the bottom of first electrode 10, second electrode 11, the width of this groove 14 is got over
Wide.
This first electrode 10 and second electrode 11 all include top surface and the bottom surface being oppositely arranged.The top surface of this first electrode 10
Either flush with this second electrode 11.The bottom surface of this first electrode 10 is concordant with the bottom surface of this second electrode 11.
Described resin bed 20 coats this first electrode 10 and second electrode 11.This first electrode 10 and second electrode 11 are located at
Top surface in this reflector 21 exposes to resin bed 20 for carrying light-emitting diode chip for backlight unit 30.Described first electrode 10 convex
Go out portion 102 and the protuberance 112 of second electrode 11 is coated in resin bed 20 completely.
This first connects to draw electrode 12 and second and connect and draws electrode 13 respectively by body 101 and second electricity of this first electrode 10
The contrary two ends of the body 111 of pole 11 bend downwards extension and are formed.This first connects to draw electrode 12 and second and connect and draws electrode 13
Opposite sides positioned at this resin bed 20.Specifically, this first connects to draw electrode 12 and second and connect and draws electrode 13 and be arranged at this resin
In the two opposite side walls of layer 20.This first connects and draws the protuberance 102 of electrode 12 and first electrode 10 and jointly enclose and set out a groove
103.In the same manner, this second connects and draws the protuberance 112 of electrode 13 and second electrode 11 and jointly enclose and set out a groove 113.
This first connects to draw electrode 12 and second and connect and draws top surface and the bottom surface that electrode 13 all includes being oppositely arranged.In the present embodiment
In, described first connects to draw electrode 12 and second and connect and draws electrode 13 and be symmetricly set in this resin bed 20 two opposite side walls central authorities（Fig. 4）.
This first connect draw electrode 12 and second connect draw electrode 13 cross sectional shape all rectangular.
This first connects and draws electrode 12 and second and connect the top surface drawing the top surface of electrode 13 and first electrode 10 and second electrode 11
Mutually concordant.This first connects and draws electrode 12 and second and connect the bottom surface drawing the bottom surface of electrode 13 and first electrode 10 and second electrode 11
Mutually concordant.
Resin bed 20 coats this first electrode 10 and second electrode 11.This resin bed 20 comprises a reflector 21.This reflection
Cup 21 is arranged at the top of this first electrode 10 and second electrode 11.Light-emitting diode chip for backlight unit 30 is arranged at the bottom of this reflector 21
Portion.Specifically, this light-emitting diode chip for backlight unit 30 is arranged in this second electrode 11 and by wire 31, wire 32 respectively with first
Electrode 10, second electrode 11 electrically connect, and that is, the light-emitting diode chip for backlight unit 30 in the present embodiment is horizontal.In other embodiment
In, light-emitting diode chip for backlight unit 30 can be that the mode of upside-down mounting is directly electrically connected with this first electrode 10 and second electrode 11.This
Luminous diode chip 30 can also be rectilinear, and that is, this light-emitting diode chip for backlight unit 30 is by the electrode positioned at its both sides（Not shown）
Electrically connect with first electrode 10 and second electrode 11 respectively.
Described resin bed 20 include for printed circuit board (PCB)（Not shown）The contact surface being sticked, first connect draw electrode 12 and
Second connects and draws electrode 13 and include for the solder side with printed circuit plate weld, and first connects to draw electrode 12 and second and connect and draw electrode 13
Solder side form the space for housing scolding tin with being spaced apart of contact surface of resin bed 20.
Described first connect draw that electrode 12 and second connects that the contact surface of the solder side and resin bed 20 drawing electrode 13 separates away from
From for L, in the present embodiment, described it is less than 100 microns apart from L.
In the present embodiment, this resin bed 20 and reflector 21 are constituted and one by way of injection by plastic material
Molding.In other embodiments, this reflector 21 and this resin bed 20 material can be different, and this reflector 21 and this resin bed
20 can distinguish molding.
This encapsulated layer 40 is made up of one of silica gel, epoxy resin or other macromolecular materials.This encapsulated layer 40 is placed in instead
Penetrate in cup 21 and cover this light-emitting diode chip for backlight unit 30.Preferably, this encapsulated layer 40 also includes fluorescent material, should for conversion
The light that light-emitting diode chip for backlight unit 30 sends.
Because described first connects to draw electrode 12 and second and connect and draw the solder side of electrode 13 and connecing of resin bed 20 in the present invention
Separated by a distance between contacting surface, thus forming the space of a strip, by this profile form package structure for LED
100 when being welded on printed circuit board (PCB), and the contact surface of resin bed 20 is contacted with the surface of printed circuit board (PCB), and first connects and draw electrode 12
And second connect and draw the solder side of electrode 13 and be connected with the circuit on printed circuit board (PCB) by scolding tin.Due to the presence in space, in weldering
In termination process, scolding tin can penetrate in this space, so that the thickness of scolding tin is increased, thus enhancing this package structure for LED 100
Bonding strength and printed circuit board (PCB) between.Further, it should be noted that for some specific welding manners (as wave-soldering)
Speech, the height in this space (first connects and draws electrode 12 and second and connect between the solder side drawing electrode 13 and printed circuit board surface
Away from) need to be maintained within 100 microns, otherwise scolding tin will draw electrode 12 and second and connect because thickness low LCL cannot reach first and connect
Draw the solder side of electrode 13, play the effect run counter to desire.
Secondly, the heat producing during the work of this package structure for LED 100 also can be connect by first rapidly and draw electrode 12
Connect with second and draw electrode 13 and be transmitted on printed circuit board (PCB) by scolding tin.
In addition, the cross sectional shape of this first electrode 10 and second electrode 11 is in " T " font, this is conducive to increasing this first electricity
Pole 10 and the contact area of second electrode 11 surface and resin bed 20, thus increase first electrode 10, second electrode 11 and resin
The bonding strength of layer 20.
Fig. 5 is the manufacture method flow chart of the LED of side view type encapsulating structure 100 of the present invention, please joins in the lump
Read Fig. 5 to Figure 12, the manufacture method of this LED of side view type encapsulating structure 100 comprises the steps：
Step S101, sees also Fig. 6 and Fig. 7, provides one to be equiped with multiple row first electrode 10 and second electrode 11
Circuit board 50, described first electrode 10, second electrode 11 contrary two ends respectively to extend formed first connect draw electrode 12, the
Two connect and draw electrode 13, and the first electrode 10 of same column is passed through connection strap 60 and longitudinally concatenated, and the second electrode 11 of same column passes through connection strap
60 longitudinally concatenate.
Described connection strap 60 is first electrode 10 and second electrode 11 provides support force and is used for described first electrode 10
It is fixed on circuit board 50 with second electrode 11.This connection strap 60 is made up of metal material, and preferably gold, copper, silver etc. are conductive and prolong
Malleability can preferable material.The thickness of this connection strap 60 is less than 100 microns.
Described first connects to draw electrode 12 and second and connect and draws electrode 13 respectively by the body 101 and second of this first electrode 10
The contrary two ends bending of the body 111 of electrode 11 extends and is formed.
Adjacent first connect draw electrode 12 and second connect the spacing drawing between electrode 13 be G.This is less than 100 microns apart from G.
Step S102, sees also Fig. 8 and Fig. 9, is formed and coats described first electrode 10, the resin bed of second electrode 11
20, described resin bed 20 comprises reflector 21, and described first connects and draw electrode 12, second connect and draw electrode 13 and be exposed to resin bed 20
Opposite sides.
The described resin bed 20 comprising reflector 21 is to be integrally formed using the method for injection.Described first electrode 10 and
Two electrodes 11 all include top surface and the bottom surface being oppositely arranged.The top surface of this first electrode 10 is flat with the top surface of this second electrode 11
Together.The bottom surface of this first electrode 10 is concordant with the bottom surface of this second electrode 11.This reflector 21 is arranged at this first electrode 10 He
The top of second electrode 11.
Step S103, sees also Figure 10, arranges light-emitting diode chip for backlight unit 30 and by leading in the bottom of reflector 21
Line 31 and wire 32 are electrically connected this first electrode 10 and second electrode 11.
In the present embodiment, this light-emitting diode chip for backlight unit 30 is arranged in second electrode 11, and passes through wire 31 and wire
32 are electrically connected first electrode 10 and second electrode 11.In other embodiments, this light-emitting diode chip for backlight unit 30 can also lead to
The form crossing upside-down mounting is directly electrically connected without wire 31 and wire 32 with first electrode 10 and second electrode 11.
Step S104, sees also Figure 11, and in reflector 21, filling encapsulated layer 40 is in order to cover light-emitting diodes tube core
Piece 30.
This encapsulated layer 40 is made up of one of silica gel, epoxy resin or other macromolecular materials.This encapsulated layer 40 is placed in instead
Penetrate in cup 21 and cover this light-emitting diode chip for backlight unit 30.Preferably, this encapsulated layer 40 also includes fluorescent material, should for conversion
The light that light-emitting diode chip for backlight unit 30 sends.
Step S105, sees also Figure 12, and transverse cuts resin bed 20 and connection strap 60 form multiple independent sides
Light-emitting diode (led) encapsulating structure 100, the resin of each independent LED of side view type encapsulating structure 100
Layer 20 includes the contact surface for contacting, each independent LED of side view type encapsulating structure with printed circuit board (PCB)
The first of 100 connects to draw electrode 12 and second and connect draws the solder side that electrode 13 includes for being soldered to printed circuit board (PCB), and described first
Connect draw electrode 12 and second connect the solder side and resin bed 20 drawing electrode 13 contact surface formed separated by a distance for house weldering
The space of stannum.
Described first connects to draw electrode 12 and second and connect and draws the contact surface of the solder side of electrode 13 and resin bed 20 separated by a distance
For L, in the present embodiment, described it is less than 100 microns apart from L.
In order to obtain the less multiple independent LED of side view type encapsulating structures 100 of thickness, line of cut
Position connects with first draws electrode 12, second connects and draw spacing L of electrode 13 side and should shorten as far as possible, but the position of line of cut is simultaneously
First electrode 10 and second electrode 11 also should be avoided.In the present embodiment, the position of line of cut connects with described first and draws electrode
12 and second connect described LED of side view type encapsulating structure 100 after the spacing drawing between electrode 13 is as cut
First connects and draws electrode 12 and second and connect the spacing between the solder side drawing electrode 13 and the contact surface of resin bed 20.
In addition so it is easy to understand that because the thickness of described connection strap 60 is less than 100 microns, therefore in actual cutting
Relatively easy, and such cutting mode do not interfere with to connect positioned at the first of this resin bed 20 both sides and draws electrode 12 and second
Connect and draw electrode 13.
It will also be appreciated that in the present invention, described first connect draw electrode 12 and second connect draw electrode 13 can be along tree
The side wall of lipid layer 20 extends to the bottom of resin bed 20.
It will also be appreciated that for the person of ordinary skill of the art, can be conceived with technology according to the present invention
Make other various corresponding change and deformation, and all these change the protection that all should belong to the claims in the present invention with deformation
Scope.
Claims (8)
1. a kind of LED of side view type encapsulating structure, is used for being installed on printed circuit board (PCB), including spaced
First electrode and second electrode, coat this first electrode and second electrode and comprise reflector resin bed, be arranged at reflector
Bottom the light-emitting diode chip for backlight unit that electrically connects with first electrode and second electrode respectively and be placed in this reflector and cover
The encapsulated layer of lid light-emitting diode chip for backlight unit it is characterised in that：Described package structure for LED also includes exposing to this resin
The first of layer opposite sides connects to draw electrode and second and connect draws electrode, and described first connects to draw electrode and second and connect and draw electrode respectively by this
First electrode and second electrode extend and are formed, and resin bed includes the contact surface for being sticked with printed circuit board (PCB), and first connects and draw electricity
Pole and second connects draws electrode and includes for the solder side with printed circuit plate weld, and described first connects and draw electrode and connect with described second
Draw electrode and be arranged at described resin bed two opposite side walls central authorities, all contact with described resin bed inside described solder side, first
Connect to draw electrode and second and connect and draw the solder side of electrode and form the sky for housing scolding tin with being spaced apart of contact surface of resin bed
Between, described first electrode, second electrode all include body and the protuberance integrally being extended by described body side, institute
State protuberance to be coated in resin bed, formed between described first electrode and second electrode a groove in order to insulating properties block this
One electrode, second electrode, the cross sectional shape of described groove is inverted funnel-form, and the top half of this groove is the recessed of a strip
Groove, the groove of this strip is jointly enclosed to set with the body of this second electrode by the body of this first electrode and forms, this groove
The latter half is a cross sectional shape is trapezoidal groove, and this trapezoidal groove is by protuberance and this second electrode of this first electrode
Protuberance jointly enclose to set and form, the top half of this groove and the latter half are interconnected.
2. LED of side view type encapsulating structure as claimed in claim 1 it is characterised in that：First connect draw electrode and
Second connect draw the solder side of electrode and the contact surface of resin bed be smaller than 100 microns.
3. LED of side view type encapsulating structure as claimed in claim 1 it is characterised in that：Described first electrode,
Second electrode includes the top surface being oppositely arranged and bottom surface, and described reflector is formed at the top of first electrode, second electrode, lights
Diode chip for backlight unit is arranged at the bottom of reflector and is electrically connected with first electrode, second electrode respectively by wire.
4. LED of side view type encapsulating structure as claimed in claim 3 it is characterised in that：Described first connects and draws electricity
Pole, second connect and draw electrode and prolonged by the contrary two ends bending of the body of described first electrode, the body of second electrode respectively
Stretch and formed, described first is connect and draw electrode, second connect and draw electrode and enclosed with the protuberance of first electrode, the protuberance of second electrode respectively
Set out groove.
5. LED of side view type encapsulating structure as claimed in claim 3 it is characterised in that：Described first electrode,
The cross sectional shape of the protuberance of second electrode is trapezoidal, and described first electrode, the size of the protuberance of second electrode are directed away from
The direction of this light-emitting diode chip for backlight unit is gradually reduced.
6. a kind of manufacture method of LED of side view type encapsulating structure, including step：One is provided to be equiped with multiple row the
One electrode and the circuit board of second electrode, described first electrode, the contrary two ends of second electrode stretch out formation respectively
One connects and draws electrode, second connects and draw electrode, and the first electrode of same column is longitudinally concatenated by connection strap, and the second electrode of same column is passed through even
Narrow bars longitudinally concatenate, and described first electrode, second electrode all include body and integrally extended by described body side
Protuberance, formed between described first electrode and second electrode a groove in order to insulating properties block this first electrode, second electricity
Pole, the cross sectional shape of described groove is inverted funnel-form, and the top half of this groove is the groove of a strip, this strip recessed
Groove is jointly enclosed to set with the body of this second electrode by the body of this first electrode and forms, and the latter half of this groove is one section
Face is shaped as trapezoidal groove, and this trapezoidal groove is enclosed with the protuberance of this second electrode jointly by the protuberance of this first electrode
If forming, the top half of this groove and the latter half are interconnected；
Formed and coat described first electrode, the resin bed of second electrode, described resin bed comprises reflector, described first connects and draw electricity
Pole, second connect and draw the opposite sides that electrode is exposed to resin bed, described protuberance is coated in resin bed；
Light-emitting diode chip for backlight unit is set in the bottom of reflector and electrically connects described first electrode, second electrode；
Filling encapsulated layer covering luminousing diode chip in reflector；And
Transverse cuts resin bed and connection strap form multiple independent LED of side view type encapsulating structures, and each is only
The resin bed of vertical LED of side view type encapsulating structure includes the contact surface for contacting with printed circuit board (PCB), each
The first of individual independent LED of side view type encapsulating structure connects to draw electrode and second and connect to be drawn electrode and includes for welding
To the solder side of printed circuit board (PCB), described first connects to draw electrode and connect with described second and draws electrode to be arranged at described resin bed two relative
Side wall centers, are all contacted with described resin bed inside described solder side, solder side forms and is used for separated by a distance with contact surface
House the space of scolding tin.
7. LED of side view type encapsulating structure as claimed in claim 6 manufacture method it is characterised in that：Connect
The thickness of bar is less than 100 microns.
8. LED of side view type encapsulating structure as claimed in claim 7 manufacture method it is characterised in that：Contact
The distance between face and solder side are less than 100 microns.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210314529.1A CN103682063B (en) | 2012-08-30 | 2012-08-30 | LED of side view type encapsulating structure and its manufacture method |
| TW101132944A TWI531096B (en) | 2012-08-30 | 2012-09-10 | Sideview light emitting diode package and method for manufacturing the same |
| US13/927,777 US20140061698A1 (en) | 2012-08-30 | 2013-06-26 | Light emitting diode package and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210314529.1A CN103682063B (en) | 2012-08-30 | 2012-08-30 | LED of side view type encapsulating structure and its manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103682063A CN103682063A (en) | 2014-03-26 |
| CN103682063B true CN103682063B (en) | 2017-03-01 |
Family
ID=50186218
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210314529.1A Expired - Fee Related CN103682063B (en) | 2012-08-30 | 2012-08-30 | LED of side view type encapsulating structure and its manufacture method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20140061698A1 (en) |
| CN (1) | CN103682063B (en) |
| TW (1) | TWI531096B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9930750B2 (en) * | 2014-08-20 | 2018-03-27 | Lumens Co., Ltd. | Method for manufacturing light-emitting device packages, light-emitting device package strip, and light-emitting device package |
| DE102015109755A1 (en) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Component and method for manufacturing a device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207170A (en) * | 2007-12-13 | 2008-06-25 | 佛山市国星光电股份有限公司 | LED lead frame and method for manufacturing LED using the lead frame |
| CN101355126A (en) * | 2007-07-23 | 2009-01-28 | 瑞莹光电股份有限公司 | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
| TWM400099U (en) * | 2010-09-27 | 2011-03-11 | Silitek Electronic Guangzhou | Lead frame, package structure and lighting device thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030075724A1 (en) * | 2001-10-19 | 2003-04-24 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
| KR100587020B1 (en) * | 2004-09-01 | 2006-06-08 | 삼성전기주식회사 | High power light emitting diode package |
| KR100637476B1 (en) * | 2005-11-09 | 2006-10-23 | 알티전자 주식회사 | Led of side view type and the method for manufacturing the same |
| JP5122172B2 (en) * | 2007-03-30 | 2013-01-16 | ローム株式会社 | Semiconductor light emitting device |
| US8030674B2 (en) * | 2008-04-28 | 2011-10-04 | Lextar Electronics Corp. | Light-emitting diode package with roughened surface portions of the lead-frame |
-
2012
- 2012-08-30 CN CN201210314529.1A patent/CN103682063B/en not_active Expired - Fee Related
- 2012-09-10 TW TW101132944A patent/TWI531096B/en active
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2013
- 2013-06-26 US US13/927,777 patent/US20140061698A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101355126A (en) * | 2007-07-23 | 2009-01-28 | 瑞莹光电股份有限公司 | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
| CN101207170A (en) * | 2007-12-13 | 2008-06-25 | 佛山市国星光电股份有限公司 | LED lead frame and method for manufacturing LED using the lead frame |
| TWM400099U (en) * | 2010-09-27 | 2011-03-11 | Silitek Electronic Guangzhou | Lead frame, package structure and lighting device thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201409778A (en) | 2014-03-01 |
| CN103682063A (en) | 2014-03-26 |
| US20140061698A1 (en) | 2014-03-06 |
| TWI531096B (en) | 2016-04-21 |
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