CN103658096A - Method for cleaning diamond wire cut silicon wafers - Google Patents
Method for cleaning diamond wire cut silicon wafers Download PDFInfo
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- CN103658096A CN103658096A CN201210320133.8A CN201210320133A CN103658096A CN 103658096 A CN103658096 A CN 103658096A CN 201210320133 A CN201210320133 A CN 201210320133A CN 103658096 A CN103658096 A CN 103658096A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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Abstract
The invention discloses a method for cleaning diamond wire cut silicon wafers. The method for cleaning the diamond wire cut silicon wafers comprises the steps that the cut silicon wafers are pre-cleaned, and activated cleaning is carried out on the pre-cleaned silicon wafers through an activated cleaning agent, wherein the activated cleaning agent is a mixed reagent formed by pure water, sodium hydroxide and hydrogen peroxide. According to the method, impurities such as organic matters, bacteria, reducible metal ions remained on the surfaces of the silicon wafers can be removed effectively through the hydrogen peroxide strong in oxidizing property; by controlling the concentration of the sodium hydroxide in the activated cleaning agent, the activated cleaning agent can only react with portions, with large flaws and damage, of the surfaces of the silicon wafers, the damage portions of the surfaces of the silicon wafers are removed, the surfaces of the silicon wafers have the same contact condition with a texture surface making reagent in the subsequent texture surface making process, namely, the reaction speeds of all portions of the surfaces of the silicon wafers with the texture surface making reagent are identical, and thus the silicon wafers after texture surface making have good texture surfaces. Therefore, the method for cleaning the diamond wire cut silicon wafers can effectively improve the cleanliness of the surfaces of the silicon wafers, and the evenness of the texture surfaces of the silicon wafers after the texture surface making is good.
Description
Technical field
The present invention relates to silicon wafer cleaning process technical field, more particularly, relate to a kind of cleaning method of silicon wafer cut by diamond wire.
Background technology
In today of energy growing tension, studying, tapping a new source of energy is a major subjects of current energy field.The main direction that solar energy is pollution-free, inexhaustible with it, become current energy field research, develop without advantages such as region restrictions.Utilizing crystal silicon solar energy battery to carry out electroluminescent is to utilize now a kind of major way of solar energy.Silicon chip is crystal silicon solar energy battery carrier, is to be prepared from through cutting by crystal silicon rod, and the quality of Wafer Cleaning effect has important impact to the conversion efficiency of silicon wafer wool making and even solar cell.
In order to obtain the silicon chip of high-cleanness, high, people have developed a lot of silicon wafer cleanings, as wet-chemical cleaning, RCA standard cleaning, dry method cleaning, ultrasonic cleaning, bubbling cleaning, wipe method, high-pressure injection method, hydrodynamics method etc.Though cleaning silicon chip method is many, be all only applicable to the silicon chip of current ordinary mortar cutting mode.Yet this free abrasive cutting mode length consuming time, efficiency are low, and the waste disposal difficulty after normally used SiC and the cutting of PEG mixed mortar, environmental protection pressure is large.
For sort this problem out, people develop the concretion abrasive new technology of cutting silicon wafer in batches, use diamond wire cutting silicon.It adopts mixed mortar and common steel wire to the minimum water base cooling fluid of environmental hazard and efficient diamond wire alternative SiC, PEG, and cutting speed is 2-3 times of ordinary mortar cutting.As everyone knows, diamond wire cutting mode is different with mortar cutting mode on the surface topography impact of silicon chip, as continued, by conventional clean method, clean the silicon chip that diamond wire cuts, can not effectively remove the impurity of silicon chip surface, after cleaning, silicon chip surface cleanliness factor is lower, matte lack of homogeneity after silicon wafer wool making.Therefore, how effectively to remove the surface impurity of silicon wafer cut by diamond wire, a problem demanding prompt solution when improving its surface cleanliness and being Wafer Cleaning.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of cleaning method of silicon wafer cut by diamond wire, the method can effectively improve the cleanliness factor of silicon chip surface, and after silicon wafer wool making, the uniformity of matte is better.
For achieving the above object, the invention provides following technical scheme:
A cleaning method for silicon wafer cut by diamond wire, described cleaning method comprises:
The silicon chip of well cutting is carried out to prerinse;
Silicon chip after adopting activation cleaning agent to prerinse activates cleaning;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water form.
Preferably, in above-mentioned cleaning method, in described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
Preferably, in above-mentioned cleaning method, described activation is cleaned and is comprised:
It is that the described activation cleaning agent of 35 ℃-55 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip after prerinse is put into temperature;
Silicon chip is carried out to pure water ultrasonic cleaning.
Preferably, in above-mentioned cleaning method, described pure water cleans and comprises:
The pure water groove that silicon chip after described activation cleaning agent cleans is put into secondary overflow launder carries out ultrasonic cleaning, and wherein, water temperature is 40 ℃-50 ℃, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.
Preferably, in above-mentioned cleaning method, described prerinse comprises:
The silicon chip being still bonded on viscose board after cutting is rinsed;
Described silicon chip is carried out to degumming process;
Silicon chip after coming unstuck is put into to fill water temperature be that the pure water inserted slot of 20 ℃-30 ℃ is a sheet by a sheet separately by silicon chip, and by its many pieces of being inserted in film magazine, then the silicon chip of a box box is put into basketry;
To putting into the silicon chip of basketry, carry out pharmacy slot ultrasonic cleaning for the first time, wherein, the cleaning reagent of described pharmacy slot for the first time ultrasonic cleaning is that concentration is the oxalic acid solution of 0.4%Wt-0.8%Wt, and scavenging period is 4min-5min, and cleaning temperature is 40 ℃-50 ℃;
Silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the first time carried out to pure water ultrasonic cleaning for the first time;
Silicon chip in described basketry after pure water ultrasonic cleaning is for the first time carried out to pharmacy slot ultrasonic cleaning for the second time, wherein, the cleaning reagent of described pharmacy slot for the second time ultrasonic cleaning is that concentration is the silicon chip Special cleaning agent solution of 2.0%Wt-4.0%Wt, cleaning temperature is 50 ℃-60 ℃, and scavenging period is 4min-5min;
Silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the second time carried out to pure water ultrasonic cleaning for the second time.
Preferably, in above-mentioned cleaning method, described flushing is: by being still bonded in after cutting on the automatic precleaning machine that silicon chip on viscose board is put into spray, rinsing, the ultrasonic function that hockets, clean 5min-10min;
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 ℃-35 ℃, and wash water comprises: cool back flowing water or running water or pure water.
Preferably, in above-mentioned cleaning method, described in come unstuck and comprise:
It is to soak 4min-7min in the hot water of 50 ℃-70 ℃ that the viscose board that is bonded with silicon chip is immersed to temperature, and the mucilage glue surface of silicon chip and viscose board is softened;
Several times silicon chip is taken off from described viscose board;
The silicon chip mucilage glue surface taking off is placed in to Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, on mucilage glue surface, collodion silk hardening by cooling is bad while wiping, and waters that to drench temperature be to wipe after the hot water of 50 ℃-70 ℃ makes described collodion silk again softening on described mucilage glue surface;
Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board; Spray normal-temperature water per minute 2 times-4 times, to guarantee that every silicon chip keeps moistening, get sheet is that 30mm-50mm is wide at every turn; Soaking, spray, water pouring water comprises: cool back flowing water or running water or pure water.
Preferably, in above-mentioned cleaning method, the ultrasonic cleaning of described pure water for the first time comprises:
It is that the pure water groove of 30 ℃-40 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and water temperature, and during cleaning, excess flow is 2L/min-8L/min.
Preferably, in above-mentioned cleaning method, the ultrasonic cleaning of described pure water for the second time comprises:
It is that the pure water groove of 40 ℃-50 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the second time put into carry potential overflow and water temperature, and during cleaning, spillway discharge is 2L/min-8L/min.
Preferably, in above-mentioned cleaning method, the ultrasonic power of described ultrasonic cleaning is that 35KHz-45KHz, ultrasound intensity are 0.7V-1.5V.
From technique scheme, can find out, the cleaning method of silicon wafer cut by diamond wire provided by the present invention comprises: the silicon chip of well cutting is carried out to prerinse; Silicon chip after adopting activation cleaning agent to prerinse activates cleaning; Wherein, described activation cleaning agent is the mix reagent that pure water, NaOH and hydrogen peroxide form.Described in the application, technical scheme can effectively be removed the impurity such as the residual organic matter of silicon chip surface, bacterium, reducing metal ion by having the hydrogen peroxide of strong oxidizing property; And can make described activation cleaning agent only exist larger defect damage place to react with surface by controlling the concentration of NaOH in described activation cleaning agent, remove the injury region of silicon chip surface, in the follow-up making herbs into wool process of silicon chip, silicon chip surface is identical with the contact situation of making herbs into wool reagent, be that silicon chip surface is identical with the reaction speed of making herbs into wool reagent everywhere, thereby after making making herbs into wool, silicon chip have good matte.Therefore, method can effectively improve the cleanliness factor of silicon chip surface described in the application, and after silicon wafer wool making, the uniformity of matte is better.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic flow sheet of the cleaning method of a kind of silicon wafer cut by diamond wire provided by the present invention.
The specific embodiment
Just as described in the background section, existing conventional clean method is cleaned the silicon chip of diamond wire cutting, can not effectively remove the impurity of silicon chip surface, after cleaning, silicon chip surface cleanliness factor is lower, cause matte lack of homogeneity after silicon wafer wool making, the pyramid coverage rate that is matte is less, thereby causes electricity conversion low.
Trace it to its cause, silicon rod is after cutting, silicon wafer surface layer atom is because of the destroyed dangling bonds that becomes of chemical bond of terrace cut slice direction, and numerous dangling bonds very easily adsorb various impurity, as particle, organic impurities, inorganic impurity, metal ion, silica flour dust etc.
Common cleaning method can only wash the partial impurities of silicon chip surface, can not remove the impurity that adhesiveness is stronger.For example the hydrogen atom in organic matter can form stronger si-h bond with described dangling bonds, thereby it is had strong adhesiveness; Reducing metal ion can form stronger chemical bond with described dangling bonds, makes equally it have strong adhesiveness; And bacterium has stronger vitality, common cleaning can not be killed removal.Residual organic matter, reducing metal ion and the bacterium of silicon chip surface can make making herbs into wool reagent fully not react with silicon chip surface when the follow-up making herbs into wool of silicon chip, thereby cause silicon chip surface making herbs into wool speed inhomogeneous, cause matte lack of homogeneity after silicon wafer wool making, finally affect the photoelectric transformation efficiency of solar cell.
Inventor studies discovery, by by hydrogen peroxide, silicon chip after the activation cleaning agent that NaOH and pure water form cuts diamond wire activates cleaning, can effectively remove the residual organic matter of silicon chip surface, reducing metal ion and bacterium, the strong oxidizing property of passing through hydrogen peroxide is by residual organic matter and the reducing metal ionic oxide formation of silicon chip surface, destroy the strong chemical bond that itself and described dangling bonds form, and bacterial oxidation can be killed, then, can by simple pure water, the described organic matter of character will be changed easily again, reducing metal ion and bacterium fall from described Wafer Cleaning.
Based on above-mentioned research, the invention provides a kind of cleaning method of silicon wafer cut by diamond wire, the method comprises:
The silicon chip of well cutting is carried out to prerinse;
Silicon chip after adopting activation cleaning agent to prerinse activates cleaning;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water form.
The present invention is removing through prerinse after the impurity that silicon chip surface adhesiveness is not strong, adopt again by hydrogen peroxide, silicon chip after the activation cleaning agent that NaOH and pure water form cuts diamond wire activates cleaning, can effectively remove the residual organic matter of silicon chip surface, reducing metal ion and bacterium, the strong oxidizing property of passing through hydrogen peroxide is by residual organic matter and the reducing metal ionic oxide formation of silicon chip surface, destroy the strong chemical bond that itself and described dangling bonds form, and bacterial oxidation can be killed, then, can by simple pure water, clean easily and will change the described organic matter of character again, reducing metal ion and bacterium fall from described Wafer Cleaning.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
Based on above-mentioned thought, the embodiment of the present application provides a kind of cleaning method of silicon wafer cut by diamond wire, with reference to figure 1, comprising:
Step S11: silicon chip is rinsed.
By being still bonded in after cutting on the automatic precleaning machine that silicon chip on viscose board is put into spray, rinsing, the ultrasonic function that hockets, clean 5min-10min, to remove the partial impurities of described silicon chip surface, the impurity such as silica soot that cooling fluid as water base in part and the cutting that distributes cause.
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 ℃-35 ℃, rinse water quality and do not limit, and can be cooling for reflux water, running water or pure water.
Step S12: described silicon chip is come unstuck.
It is to soak 4min-7min in the hot water of 50 ℃-70 ℃ that the viscose board that is bonded with silicon chip is immersed to temperature, and the mucilage glue surface of silicon chip and viscose board is softened.Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board.
Then, continuous separate takes off silicon chip several times from described viscose board, and to get sheet be that 30mm-50mm is wide is at every turn advisable, and avoids once taking off silicon chip and too much causes silicon chip broken.
The silicon chip mucilage glue surface taking off is placed in to Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, on mucilage glue surface, collodion silk hardening by cooling is bad while wiping, and waters that to drench temperature be to wipe after the hot water of 50 ℃-70 ℃ makes described collodion silk again softening on described mucilage glue surface.
In the process of coming unstuck, the silicon chip to not taking off viscose board per minute sprays normal-temperature water 2 times-4 times, to guarantee that every silicon chip keeps moistening, avoids silicon chip too dry, causes the generation of Crushing Problem while getting sheet.
Wherein, described immersion, spraying and water and drench quality of water and do not limit, can be cooling for reflux water, running water or pure water.
Described coming unstuck can also be come unstuck for thermal evaporation, by heating, make described mucilage glue surface evaporation so that silicon chip is separated with viscose board, this kind of mode easily produces pernicious gas when mucilage glue surface, causes environmental pollution, therefore the present embodiment preferably adopts above-mentioned immersion type degumming process.
Step S13: described silicon chip is carried out inserted sheet, framed up.
Silicon chip after coming unstuck is put into to fill water temperature be that the pure water inserted slot of 20 ℃-30 ℃ is a sheet by a sheet separately by same batch of silicon chip taking off, and be inserted in film magazine silicon chip is many pieces of, then the silicon chip of a box box is put into basketry, common 6 box-packed one basket.
Step S14: described silicon chip is carried out to pharmacy slot ultrasonic cleaning for the first time.
The basketry that silicon chip is housed is put into to be contained with concentration be that the rinse bath of the oxalic acid solution of 0.4%Wt-0.8%Wt carries out pharmacy slot ultrasonic cleaning for the first time.
Wherein, scavenging period is 4min-5min, and cleaning temperature is 40 ℃-50 ℃.
Oxalic acid is very highly acid organic acid, has very strong complex coordination ability, can be good at removing some organic matters of silicon chip surface, such as finger-marks of introducing in some organic surface active agents, lubricant and production process in water base cooling fluid etc.And can with part metals atom or the ion generation complex reaction of silicon chip surface, and then remove above-mentioned impurity, and well to coordinate ultrasonic be that bubbling is peeled off the silica flour of silicon chip surface and then remove.
Step S15: described silicon chip is carried out to pure water ultrasonic cleaning for the first time.
It is that the pure water groove of 30 ℃-40 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and water temperature, and during cleaning, excess flow is 2L/min-8L/min.Through simple pure water ultrasonic cleaning, the impurity and the oxalic acid that in previous step, depart from silicon chip surface are washed.
Step S16: described silicon chip is carried out to pharmacy slot ultrasonic cleaning for the second time.
Silicon chip in described basketry after pure water ultrasonic cleaning is for the first time carried out to pharmacy slot ultrasonic cleaning for the second time, wherein, the cleaning reagent of described pharmacy slot for the second time ultrasonic cleaning is that concentration is the silicon chip Special cleaning agent solution of 2.0%Wt-4.0%Wt, cleaning temperature is 50 ℃-60 ℃, and scavenging period is 4min-5min.
Through peralkaline silicon slice detergent, clean, can further remove the impurity such as organic matter, inorganic matter and silica flour of silicon chip surface.
Step S17: the silicon chip in the described basketry after pharmacy slot ultrasonic cleaning is for the second time carried out to pure water ultrasonic cleaning for the second time
It is that the pure water groove of 40 ℃-50 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the second time put into carry potential overflow and water temperature, and during cleaning, excess flow is 2L/min-8L/min.
Through simple pure water ultrasonic cleaning, the impurity of the silicon slice detergent in previous step and disengaging silicon chip surface can be washed.
Step S18: described silicon chip is activated to cleaning.
Adopt activation cleaning agent to clean the silicon chip through pure water ultrasonic cleaning for the second time, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water form.In described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
Concrete, it is that the described activation cleaning agent of 35 ℃-55 ℃ carries out ultrasonic cleaning 4min-5min that described silicon chip is put into temperature.
Then, the pure water groove that the silicon chip after described activation cleaning agent cleans is put into secondary overflow launder carries out ultrasonic cleaning, and wherein, water temperature is 40 ℃-50 ℃, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.Residual impurity and described activation cleaning agent that character is changed wash.
For censorship after making silicon chip dry as early as possible, packing warehouse-in, the drier that the silicon chip having cleaned can be put into temperature and be 120 ℃-130 ℃, rotating speed be 380r/min-420r/min dries fast.
Above-mentioned cleaning need to be carried out the replacing of a plurality of cell bodies, and emphasis is picking and placeing of silicon chip, first silicon chip is inserted to film magazine, then carries out cleaning progressively after film magazine is put into basketry.When changing cell body, described basketry is extracted and wants light, slow, slow, avoid move and acutely cause silicon chip fragmentation.And when mentioning the described basketry cell body corresponding from oxalic acid solution, silicon slice detergent, activation cleaning agent, when described basketry leaves the liquid level of corresponding cell body, need to stop 3s-5s, make the described corresponding cell body of reagent backflow residual in basketry on one side, improve utilization rate and the service life of described reagent, cleaning performance in the time of can increasing follow-up cleaning simultaneously, and can make silicon chip be difficult for being attached together, can improve cleaning, dry effect.
It should be noted that, described step S11-step S17 is prewashed a kind of optimum embodiment of method described in the application, is not unique implementation.As described in prerinse can be directly adopt silicon slice detergent to clean the silicon chip after coming unstuck, and then activate cleaning, although poor with respect to above-mentioned optimum embodiment cleaning performance, with respect to existing traditional cleaning way, its wash result is better.
Silicon chip after the activation cleaning agent that hydrogen peroxide, NaOH and pure water form cuts diamond wire activates cleaning, can effectively remove residual organic matter, reducing metal atom and ion, the bacterium of silicon chip surface, the strong oxidizing property of passing through hydrogen peroxide is by residual organic matter, reducing metal atom and the ionic oxide formation of silicon chip surface, destroy the strong chemical bond that itself and described dangling bonds form, and bacterial oxidation can be killed, then, can by simple pure water, clean easily the above-mentioned impurity that changes character to fall from described Wafer Cleaning again.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a cleaning method for silicon wafer cut by diamond wire, is characterized in that, comprising:
The silicon chip of well cutting is carried out to prerinse;
Silicon chip after adopting activation cleaning agent to prerinse activates cleaning;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water form.
2. cleaning method according to claim 1, is characterized in that, in described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
3. cleaning method according to claim 2, is characterized in that, described activation is cleaned and comprised:
It is that the described activation cleaning agent of 35 ℃-55 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip after prerinse is put into temperature;
Silicon chip is carried out to pure water ultrasonic cleaning.
4. cleaning method according to claim 3, is characterized in that, described pure water ultrasonic cleaning comprises:
The pure water groove that silicon chip after described activation cleaning agent cleans is put into secondary overflow launder carries out ultrasonic cleaning, and wherein, water temperature is 40 ℃-50 ℃, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.
5. cleaning method according to claim 1, is characterized in that, described prerinse comprises:
The silicon chip being still bonded on viscose board after cutting is rinsed;
Described silicon chip is carried out to degumming process;
Silicon chip after coming unstuck is put into to fill water temperature be that the pure water inserted slot of 20 ℃-30 ℃ is a sheet by a sheet separately by silicon chip, and by its many pieces of being inserted in film magazine, then the silicon chip of a box box is put into basketry;
To putting into the silicon chip of basketry, carry out pharmacy slot ultrasonic cleaning for the first time, wherein, the cleaning reagent of described pharmacy slot for the first time ultrasonic cleaning is that concentration is the oxalic acid solution of 0.4%Wt-0.8%Wt, and scavenging period is 4min-5min, and cleaning temperature is 40 ℃-50 ℃;
Silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the first time carried out to pure water ultrasonic cleaning for the first time;
Silicon chip in described basketry after pure water ultrasonic cleaning is for the first time carried out to pharmacy slot ultrasonic cleaning for the second time, wherein, the cleaning reagent of described pharmacy slot for the second time ultrasonic cleaning is that concentration is the silicon chip Special cleaning agent solution of 2.0%Wt-4.0%Wt, cleaning temperature is 50 ℃-60 ℃, and scavenging period is 4min-5min;
Silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the second time carried out to pure water ultrasonic cleaning for the second time.
6. cleaning method according to claim 5, is characterized in that, described flushing is: by being still bonded in after cutting on the automatic precleaning machine that silicon chip on viscose board is put into spray, rinsing, the ultrasonic function that hockets, clean 5min-10min;
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 ℃-35 ℃, and wash water comprises: cool back flowing water or running water or pure water.
7. cleaning method according to claim 5, is characterized in that, described in come unstuck and comprise:
It is to soak 4min-7min in the hot water of 50 ℃-70 ℃ that the viscose board that is bonded with silicon chip is immersed to temperature, and the mucilage glue surface of silicon chip and viscose board is softened;
Several times silicon chip is taken off from described viscose board;
The silicon chip mucilage glue surface taking off is placed in to Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, on mucilage glue surface, collodion silk hardening by cooling is bad while wiping, and waters that to drench temperature be to wipe after the hot water of 50 ℃-70 ℃ makes described collodion silk again softening on described mucilage glue surface;
Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board; Spray normal-temperature water per minute 2 times-4 times, to guarantee that every silicon chip keeps moistening, get sheet is that 30mm-50mm is wide at every turn; Soaking, spray, water pouring water comprises: cool back flowing water or running water or pure water.
8. cleaning method according to claim 5, is characterized in that, the ultrasonic cleaning of described pure water for the first time comprises:
It is that the pure water groove of 30 ℃-40 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and water temperature, and during cleaning, spillway discharge is 2L/min-8L/min.
9. cleaning method according to claim 5, is characterized in that, the ultrasonic cleaning of described pure water for the second time comprises:
It is that the pure water groove of 40 ℃-50 ℃ carries out ultrasonic cleaning 4min-5min that silicon chip in described basketry after pharmacy slot ultrasonic cleaning is for the second time put into carry potential overflow and water temperature, and during cleaning, spillway discharge is 2L/min-8L/min.
10. according to the cleaning method described in claim 5-9 any one, it is characterized in that, the ultrasonic power of described ultrasonic cleaning is that 35KHz-45KHz, ultrasound intensity are 0.7V-1.5V.
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