LED encapsulating structure
Technical field
The present invention relates to a kind of LED encapsulating structure, belong to LED encapsulation technology field.
Background technology
LED encapsulating structure in conventional art as shown in Figure 1, comprises the devices such as support 1, crystal-bonding adhesive 2, wafer 3.In order to improve the external quantum efficiency of LED, conventionally in the bowl cup the inside of support, be coated with the argent that visible ray is had to better reflectivity.Crystal-bonding adhesive 2 is arranged on support 1, and wafer 3 is sticky and in crystal-bonding adhesive 1 surface.The application kind of crystal-bonding adhesive 1, can be divided into conducting resinl and insulating cement by its conductivity, by its light transmission, can be divided into transparent adhesive tape (or semi-transparent gelatin) and nontransparent glue.
While adopting transparent crystal-bonding adhesive, the light that send LED chip bottom surface can pass transparent crystal-bonding adhesive; Can there is similar mirror-reflection in the silver coating surface in bowl cup bottom.But its reflection approach can be at chip bottom and a bowl cup bottom interreflection, and light is in each reflection process, inevitably by a part that material absorbs.
Adopt nontransparent crystal-bonding adhesive, nontransparent glue is the crystal-bonding adhesive that contains silver-colored particle, is referred to as elargol, conduction crystal-bonding adhesive utilization silver particle conduction and have conductivity.The light that send LED chip bottom surface can be in crystal-bonding adhesive silver-colored particle surface generation diffuse reflection, the silver content of diffuse reflection in crystal-bonding adhesive is relevant.The silver content of common elargol is 80%.Relatively transparent crystal-bonding adhesive, the light that elargol can improve chip back reflects bottom, can promote external quantum efficiency, but the defect one of silver: reflectivity is still not ideal enough, at the reflectivity 83%-95% of 350nm to 500nm wave band.Defect two: the thermal stability of silver is bad, and silver has higher transport property, if silver moves on chip, can cause chip to occur electric leakage; If silver is oxidized, can cause crystal-bonding adhesive bonding force to reduce.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of LED encapsulating structure is provided, can make the light of chip bottom reflect away as much as possible.
According to technical scheme provided by the invention, described LED encapsulating structure, comprises a bowl cup-shaped support, it is characterized in that: the bowl cup bottom at described support arranges reflection die bond glue-line, at reflection die bond glue-line upper surface, crystal-bonding adhesive is set, bonding LED chip on crystal-bonding adhesive; In described reflection die bond glue-line, be uniformly distributed some barium sulfate particles.
The diameter of described barium sulfate particle is 0.3~5 μ m, and barium sulfate particle accounts for 55%~85% of reflection die bond glue-line quality.
The present invention has the following advantages: (1) the present invention can reduce the light absorption that interreflection causes bottom support and LED chip, improves the external quantum efficiency of chip; (2) barium sulfate particle in the reflection die bond glue-line that the present invention adopts all has 98% high reflectance at 350~600nm wave band, and barium sulfate has stable chemical property and good thermal stability.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of LED encapsulating structure in prior art.
Fig. 2 is structural representation of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 2: described LED encapsulating structure comprises support 11, reflection die bond glue-line 12, crystal-bonding adhesive 13, LED chip 14 etc.
As shown in Figure 2, the present invention includes bowl cup-shaped support 11, in the bowl cup bottom of support 11, reflection die bond glue-line 12 is set, at reflection die bond glue-line 12 upper surfaces, crystal-bonding adhesive 13 is set, bonding LED chip 14 on crystal-bonding adhesive 13; In described reflection die bond glue-line 12, be uniformly distributed some barium sulfate particles;
Described reflection die bond glue-line 12 forms through hot setting after adopting crystal-bonding adhesive and barium sulfate particle to mix; The diameter of described barium sulfate particle is 0.3~5 μ m, and barium sulfate particle accounts for 55%~85% of reflection die bond glue-line 12 quality; Choosing diameter 0.3~5 μ m and 55%~85% proportion is in order to take into account shear strength and adhesion, and this is because along with the proportion of barium sulfate particle at crystal-bonding adhesive increases, the probability that light is reflected can increase, but the shear strength of crystal-bonding adhesive and adhesion can reduce.
The present invention adopts crystal-bonding adhesive and barium sulfate particle to be mixed and made into reflection die bond glue-line 12 below crystal-bonding adhesive 13, can make the light of chip bottom reflect as much as possible.In use, the light that LED chip bottom surface is penetrated enters after reflection die bond glue-line, there is diffuse reflection in the barium sulfate particle surface in reflection die bond glue-line, thereby change the direction of propagation of light, reduce the light absorption that interreflection causes bottom support and LED chip, improve the external quantum efficiency of chip.
The present invention adopts reflection die bond glue-line to have following excellent pad: (1) barium sulfate all has 98% high reflectance at 350~600nm wave band; (2) barium sulfate has stable chemical property and good thermal stability.