CN103594563B - A kind of selenizing stove preparing CIGS solar battery obsorbing layer - Google Patents
A kind of selenizing stove preparing CIGS solar battery obsorbing layer Download PDFInfo
- Publication number
- CN103594563B CN103594563B CN201310627444.3A CN201310627444A CN103594563B CN 103594563 B CN103594563 B CN 103594563B CN 201310627444 A CN201310627444 A CN 201310627444A CN 103594563 B CN103594563 B CN 103594563B
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- China
- Prior art keywords
- burner hearth
- reaction zone
- selenizing
- substrate
- hole
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005507 spraying Methods 0.000 claims abstract description 21
- 239000011669 selenium Substances 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 5
- 150000003342 selenium Chemical class 0.000 claims description 3
- 239000007921 spray Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to preparation CIGS solar battery obsorbing layer, a kind of selenizing stove preparing CIGS solar battery obsorbing layer specifically, comprise the burner hearth of selenizing CIGS solar cell substrate and transmit the conveyer belt of substrate through these burner hearth two ends, the whole outer wall of burner hearth is coated with temperature control heating device, described burner hearth is divided into spraying area, reaction zone and air inlet area by four successively to upper and lower baffle plate, leave the gap for conveying Tape movement between upper and lower baffle plate, the injection apparatus of the described substrate injection selenium steam to movement is installed in described spraying area; Be provided with inert gas air admission hole in burner hearth reaction zone one end, the burner hearth other end is provided with steam vent, between described spraying area and reaction zone, is equipped with gas via-hole between reaction zone and air inlet area.The present invention adopts the substrate at the uniform velocity movement to spray the mode of selenium steam, and not only spraying evenly, be conducive to improving selenizing effect, and efficiency is high.
Description
Technical field
The present invention relates to the preparation of CIGS solar battery obsorbing layer, is the selenizing stove for the preparation of absorbed layer specifically.
Background technology
Solar cell is a kind of device solar energy being converted to electric energy, wherein CIGS (Copper Indium Gallium Selenide) film be counted as in all thin film solar cell technology be hopeful most to realize at a low price, the photovoltaic material of efficient, stable performance.Reason mainly contain following some: 1) band gap of CIGS can regulate and control, and reaches the numerical value matched with solar spectrum; 2) performance of CIGS thin film solar cell is highly stable, has very strong capability of resistance to radiation, is suitable as very much the electrical generation components of Aerospace Satellite; 3) CIGS thin film is a kind of direct band gap compound semiconductor materials, very high to the absorption coefficient of sunlight; 4) conversion efficiency of CIGS thin film solar cell is high.
Absorbed layer CIGS thin-film is the core of CIGS solar cell, and the preparation method of absorbed layer is as selenizing method after polynary steaming method altogether and magnetron sputtering.Although these evaporating deposition techniques can prepare the high CIGS hull cell of conversion efficiency, the vacuum equipment of precision needs very large equipment investment, and the production cycle is long, and this makes the production cost of battery higher.Device for selenization is called selenizing stove, and existing selenizing stove is all close heat-treatment furnace based on glass substrate CIGS solar cell batch-type.In this scenario, several pieces surface depositions have the substrate delamination of precursor film to be placed in selenizing stove, are then heated to 450 ~ 600 DEG C under lower than 1 DEG C/s heating rate and react between 30 minutes to a few hours in H2Se or Se atmosphere.The problem that this batch-type closes selenizing stove is, every batch all will through vacuumizing, heating, be incubated, temperature-fall period, the cycle is long, energy consumption large, reduces production cost unfavorable for enhancing productivity.
Also disclose a kind of selenizing stove at present, if notification number is the Chinese patent of CN102185024B, furnace chamber is divided into four sections and carries out selenizing to substrate by it, but due to its mode adopting middle air inlet, two ends exhaust, makes the exhaust of conversion zone thorough not; And it adopts interlayer to add the mode of aperture to substrate selenizing, sprays even not.
Summary of the invention
For above-mentioned technical problem, the invention provides a kind of spraying evenly, exhaust CIGS solar battery obsorbing layer selenizing stove more thoroughly.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of selenizing stove preparing CIGS solar battery obsorbing layer, comprise the burner hearth of selenizing CIGS solar cell substrate and transmit the conveyer belt of substrate through these burner hearth two ends, the whole outer wall of burner hearth is coated with temperature control heating device, described burner hearth is divided into spraying area, reaction zone and air inlet area by four successively to upper and lower baffle plate, leave the gap for conveying Tape movement between upper and lower baffle plate, the injection apparatus of the described substrate injection selenium steam to movement is installed in described spraying area; Be provided with inert gas air admission hole in burner hearth reaction zone one end, the burner hearth other end is provided with steam vent, between described spraying area and reaction zone, is equipped with gas via-hole between reaction zone and air inlet area.
Further, described air admission hole, through hole, steam vent are crisscross arranged on the upper and lower baffle plate of correspondence.
As preferably, described air admission hole is arranged on the lower baffle plate of one end described in burner hearth.
As preferably, on the downside of described spraying area, be provided with the air-permeable mattress of support belt.
As preferably, described injection apparatus comprises several nozzle, and several nozzle is scattered in row vertical with the conveyer belt direction of motion.
As preferably, described injection apparatus comprises a selenium steam pipe, and at least one row's spray-hole opened by this selenium steam pipe, and each row's spray-hole is vertical with the conveyer belt direction of motion.
The present invention compared with prior art tool has the following advantages:
1, the present invention adopts the substrate at the uniform velocity movement to spray the mode of selenium steam, and not only spraying evenly, be conducive to improving selenizing effect, and efficiency is high.
2, adopt the air inlet of burner hearth one end, the mode of other end exhaust, and airflow direction is contrary with direction of substrate motion, carries portion of air and enter reaction zone when not only avoiding conveyer belt to move, and the exhaust of reaction zone is very thorough.
3, by by air admission hole, through hole, steam vent is upper and lower is crisscross arranged, and makes the exhaust of reaction zone more thorough.
Accompanying drawing explanation
Fig. 1 is the structural representation of optimal way of the present invention;
Fig. 2 is inlet zone cross section of the present invention enlarged diagram.
Embodiment
The present invention is introduced in detail below in conjunction with accompanying drawing:
Fig. 1 illustrates selenizing stove of the present invention, it comprises the burner hearth 1 of selenizing CIGS solar cell substrate and transmits the conveyer belt 3 of substrate 2 through these burner hearth two ends, the whole outer wall of burner hearth is coated with temperature control heating device 4, thus ensures that spraying area, reaction zone are consistent with the temperature of air inlet area; Described burner hearth is divided into spraying area 5, reaction zone 6 and air inlet area 7 by four successively to upper and lower baffle plate 11,12, the gap for conveying Tape movement is left between upper and lower baffle plate, be provided with the injection apparatus 8 of the described substrate injection selenium steam to movement in described spraying area, wherein injection apparatus is communicated with the device producing selenium steam.Substrate uniform motion should be ensured in implementation process, and control the constant flow of injection apparatus, be conducive to improving absorbed layer selenizing quality; On the substrate of uniform motion, spray quantitative selenium steam due to adopting, therefore, spray very even.After selenium steam has sprayed, substrate is delivered to reaction zone completely by conveyer belt and reacts.
In order to ensure selenizing effect, should by the air emptying of reaction zone, therefore, the present invention is provided with inert gas air admission hole 71 in burner hearth reaction zone one end, the burner hearth other end is provided with steam vent 51, be equipped with gas via-hole 61 between described spraying area and reaction zone, between reaction zone and air inlet area, make airflow direction contrary with the conveyer belt direction of motion like this, have utilization thoroughly to discharge air.Before ejecting, should carry inert gas by air admission hole to air inlet area, inert gas enters reaction zone and inlet zone successively by the gap between upper lower baffle plate and through hole, thus is discharged from steam vent by air.Because reaction zone is arranged between inlet zone and air inlet area, even if there is gap, also can ensure the air of emptying reaction zone, thus improve the quality of reaction zone selenizing.
In implementation process, described air admission hole, through hole, steam vent are crisscross arranged on the upper and lower baffle plate of correspondence; Like this for each district, between air inlet and exhaust outlet, there is difference in height, be conducive to, by the air emptying in region, can not dead angle being left.Further, described air admission hole is arranged on the lower baffle plate of one end described in burner hearth, owing to adopting the mode be crisscross arranged, therefore on the lower baffle plate of spraying area, described through hole is provided with, inert gas is made to move from bottom to top in spraying area like this, not only can improve exhaust effect, and substrate back can be prevented by selenium steam corrosion.During in order to ensure to spray, conveyer belt is indeformable, and can arrange air-permeable mattress 9 support belt on the downside of described spraying area, air-permeable mattress can not affect gas flow, as the poroid pad etc. adopting temperature-resistant material to make.
In order to improve jeting effect, injection apparatus 8 of the present invention comprises several nozzle 81, and the quantity of nozzle is selected according to the reasonable wide of substrate, but several nozzle must be made to be scattered in row vertical with the conveyer belt direction of motion, can make to spray more even like this, jeting effect is higher.Alternatively, as Fig. 2, injection apparatus 8 can comprise row's selenium steam pipe 82, and at least one spray-hole 83 opened by this selenium steam pipe, and each row's spray-hole is vertical with the conveyer belt direction of motion, and this structure is simpler, and cost is lower.
Above-mentioned execution mode is used for illustrative purposes only, and be not limitation of the present invention, the those of ordinary skill of relevant technical field, without departing from the spirit and scope of the present invention, can also make various change and modification, therefore all equivalent technical schemes also should belong to category of the present invention.
Claims (6)
1. prepare the selenizing stove of CIGS solar battery obsorbing layer for one kind, comprise the burner hearth of selenizing CIGS solar cell substrate and transmit the conveyer belt of substrate through these burner hearth two ends, the whole outer wall of burner hearth is coated with temperature control heating device, it is characterized in that: described burner hearth is divided into spraying area, reaction zone and air inlet area by four successively to upper and lower baffle plate, leave the gap for conveying Tape movement between upper and lower baffle plate, the injection apparatus of the described substrate injection selenium steam to movement is installed in described spraying area; Be provided with inert gas air admission hole in burner hearth reaction zone one end, the burner hearth other end is provided with steam vent, between described spraying area and reaction zone, is equipped with gas via-hole between reaction zone and air inlet area.
2. selenizing stove according to claim 1, is characterized in that: described air admission hole, through hole, steam vent are crisscross arranged on the upper and lower baffle plate of correspondence.
3. selenizing stove according to claim 2, is characterized in that: described air admission hole is arranged on the lower baffle plate of one end described in burner hearth.
4. selenizing stove according to claim 3, is characterized in that: the air-permeable mattress being provided with support belt on the downside of described spraying area.
5. selenizing stove as claimed in any of claims 1 to 4, is characterized in that: described injection apparatus comprises several nozzle, several nozzle is scattered in row vertical with the conveyer belt direction of motion.
6. selenizing stove as claimed in any of claims 1 to 4, is characterized in that: described injection apparatus comprises a selenium steam pipe, and at least one row's spray-hole opened by this selenium steam pipe, and each row's spray-hole is vertical with the conveyer belt direction of motion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627444.3A CN103594563B (en) | 2013-11-29 | 2013-11-29 | A kind of selenizing stove preparing CIGS solar battery obsorbing layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627444.3A CN103594563B (en) | 2013-11-29 | 2013-11-29 | A kind of selenizing stove preparing CIGS solar battery obsorbing layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594563A CN103594563A (en) | 2014-02-19 |
| CN103594563B true CN103594563B (en) | 2016-02-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310627444.3A Expired - Fee Related CN103594563B (en) | 2013-11-29 | 2013-11-29 | A kind of selenizing stove preparing CIGS solar battery obsorbing layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594563B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185024A (en) * | 2011-04-01 | 2011-09-14 | 湘潭大学 | Selenylation furnace for treating and preparing CIGS (Copper Indium Gallium Diselenide) solar cell absorbing layer and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2191496A4 (en) * | 2007-09-01 | 2015-01-14 | Yann Roussillon | Improved solution deposition assembly |
| US20100226629A1 (en) * | 2008-07-21 | 2010-09-09 | Solopower, Inc. | Roll-to-roll processing and tools for thin film solar cell manufacturing |
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2013
- 2013-11-29 CN CN201310627444.3A patent/CN103594563B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185024A (en) * | 2011-04-01 | 2011-09-14 | 湘潭大学 | Selenylation furnace for treating and preparing CIGS (Copper Indium Gallium Diselenide) solar cell absorbing layer and manufacturing method thereof |
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| Publication number | Publication date |
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| CN103594563A (en) | 2014-02-19 |
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Address after: 545006 the Guangxi Zhuang Autonomous Region Liuzhou Liu Dong New Area Bay Road No. 2 East standard workshop No. 2 supporting office building No. 314 Patentee after: Liuzhou Bairente Advanced Materials Co., Ltd. Address before: 545006 the Guangxi Zhuang Autonomous Region, Liuzhou high tech Road, No. 1 standard workshop D East, building 5, floor, floor, Patentee before: Liuzhou Bairente Advanced Materials Co., Ltd. |
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Granted publication date: 20160224 Termination date: 20191129 |