CN103579372A - Schottky potential barrier diode and manufacturing method thereof - Google Patents
Schottky potential barrier diode and manufacturing method thereof Download PDFInfo
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- CN103579372A CN103579372A CN201210268452.9A CN201210268452A CN103579372A CN 103579372 A CN103579372 A CN 103579372A CN 201210268452 A CN201210268452 A CN 201210268452A CN 103579372 A CN103579372 A CN 103579372A
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- 238000005036 potential barrier Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 118
- 239000000956 alloy Substances 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- -1 aluminium gallium nitride Chemical class 0.000 claims 14
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 15
- 238000004088 simulation Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a Schottky barrier diode (SBD) and a manufacturing method thereof. The Schottky barrier diode is formed on a substrate and comprises a gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, an insulation layer formed on the AlGaN layer, an anode conductive layer formed on the insulation layer and a cathode conductive layer formed on the AlGaN layer, wherein one part of the anode conductive layer and the GaN layer or the AlGaN layer form Schottky contact, and the other part of the anode conductive layer is isolated from the AlGaN layer through the isolation layer; the cathode conductive layer and the AlGaN layer form ohmic contact, and the cathode conductive layer is not in direct contact with the anode conductive layer.
Description
Technical field
The present invention relates to a Schottky potential barrier diode (Schottky barrier diode, SBD) and manufacture method thereof, refer to especially a kind of SBD and manufacture method thereof that reduces leakage current.
Background technology
Fig. 1 shows a kind of prior art Schottky potential barrier diode (SBD) 100, is formed on silicon substrate 11, comprise gallium nitride (GaN) layer, aluminium gallium nitride alloy (AlGaN) layer, anode conductive layer 14, with cathode conductive layer 15.SBD is semiconductor element, compared to p-n junction rectifier, the Schottky potential barrier (Schottky barrier) that it utilizes metal and semi-conductive Schottky contacts (Schottky contact) to produce, while making to operate, forward current is larger, and turnaround time is shorter.Yet owing to making SBD operate in reverse bias, can produce very large leakage current, therefore cause electric loss of energy.
In view of this, the present invention, for above-mentioned the deficiencies in the prior art, proposes a kind of Schottky potential barrier diode and manufacture method thereof, while making Schottky potential barrier diode operation, reduces leakage current, the electric energy loss when reducing Schottky potential barrier diode operation.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and defect, proposes a kind of Schottky potential barrier diode and manufacture method thereof.
For reaching above-mentioned purpose, with regard to one of them viewpoint speech, the invention provides a kind of Schottky potential barrier diode, be formed on a substrate, comprise: a gallium nitride (gallium nitride, GaN) layer, is formed on this substrate; One aluminium gallium nitride alloy (aluminum gallium nitride, AlGaN) layer, is formed on this GaN layer; One insulating barrier, is formed on this AlGaN layer; One anode conductive layer, is formed on this insulating barrier, and this anode conductive layer of part and this GaN layer or this AlGaN layer, forms Schottky contacts, and this anode conductive layer of another part and this AlGaN interlayer, by this insulating barrier, is separated; And a cathode conductive layer, be formed on this AlGaN layer, and with this AlGaN interlayer, form an ohmic contact, and this cathode conductive layer is not directly connected with this anode conductive layer.
With regard to another viewpoint speech, the present invention also provides a kind of Schottky potential barrier diode fabricating method, comprises: form a gallium nitride (gallium nitride, GaN) layer on a substrate; Form an aluminium gallium nitride alloy (aluminum gallium nitride, AlGaN) layer on this GaN layer; Form an insulating barrier on this AlGaN layer; Form an anode conductive layer on this insulating barrier, and this anode conductive layer of part and this GaN layer or this AlGaN layer, form Schottky contacts, and this anode conductive layer of another part and this AlGaN interlayer, by this insulating barrier, separated; And form a cathode conductive layer on this AlGaN layer, and with this AlGaN interlayer, form an ohmic contact, and this cathode conductive layer is not directly connected with this anode conductive layer.
In a kind of better enforcement kenel, what this insulating barrier was looked by vertical view is trellis, is formed between this anode conductive layer and this GaN layer or this AlGaN layer therein.
In the better enforcement kenel of another kind, this substrate comprises an insulated substrate or a conductor substrate.
In another better enforcement kenel, this thickness of insulating layer is less than 1 micron (um).
In the better enforcement kenel of another kind, this insulating barrier has one higher than 3.9 dielectric constant.
Below by specific embodiment, illustrate in detail, when the effect that is easier to understand object of the present invention, technology contents, feature and reaches.
Accompanying drawing explanation
Fig. 1 shows a kind of prior art Schottky potential barrier diode (SBD) 100;
Fig. 2 shows first embodiment of the present invention;
Fig. 3 shows second embodiment of the present invention;
Fig. 4 A-4C shows the 3rd embodiment of the present invention;
Fig. 5 shows the 4th embodiment of the present invention;
Fig. 6 A-6B shows prior art SBD(Fig. 6 A) with utilize SBD(Fig. 6 B of the present invention) the performance plot of anode current antianode voltage;
Fig. 7 A-7B shows prior art SBD(Fig. 7 A) with utilize SBD(Fig. 7 B of the present invention) the electric field simulation performance plot of section two dimensional;
Fig. 8 A-8B shows prior art SBD(Fig. 8 A) with utilize SBD(Fig. 8 B of the present invention) at the electric field simulation performance plot of the vertical direction of anode edge;
Fig. 9 A-9B shows prior art SBD(Fig. 9 A) with utilize SBD(Fig. 9 B of the present invention) at the electric field simulation performance plot of passage horizontal direction.
Symbol description in figure
11,21 substrates
12,22 GaN layers
13,23 AlGaN layers
14,24,34 anode conductive layers
15,25,35 cathode conductive layers
26 insulating barriers
100,200,300,400 Schottky potential barrier diodes
Et, Ep anode edge electric field
Embodiment
Graphic in the present invention all belongs to signal, is mainly intended to represent the orbution up and down between fabrication steps and each layer, as for shape, thickness and width not according to scale.
Fig. 2 shows first embodiment of the present invention.As shown in Figure 2, SBD200 is for example formed on substrate 21, and substrate 21 is for example and without limitation to insulated substrate or the conductor substrates such as silicon substrate, silicon carbide substrate or sapphire substrate.And on substrate 21, such as but not limited to form gallium nitride (GaN) layer 22 with epitaxy technology.Except GaN layer 22, SBD200 also comprises aluminium gallium nitride alloy (AlGaN) layer 23, insulating barrier 24, anode conductive layer 25 and cathode conductive layer 26.Wherein, AlGaN layer 23, is formed on GaN layer 22; Insulating barrier 24 is formed on AlGaN layer 23; Anode conductive layer 25 is formed on insulating barrier 24, and a part of A anode conductive layer 25 and AlGaN layer 24, forms Schottky contacts, and 23, another part B anode conductive layer 25 and AlGaN layer, by insulating barrier 24, is separated; Cathode conductive layer 26, is formed on AlGaN layer 23, and and 23, AlGaN layer, form ohmic contact, and cathode conductive layer 26 is not directly connected with anode conductive layer 25.
The present embodiment difference from prior art, is mainly to utilize insulating barrier 24, forms many electric fields dull and stereotyped, and adjusts the Schottky potential barrier between anode metal layer 25 and AlGaN layer 23, the breakdown voltage when improving not conducting of SBD.
Fig. 3 shows second embodiment of the present invention.The cross-sectional schematic of the present embodiment display application SBD300 of the present invention.Different from first embodiment, the segment anode conductive layer 35 of the present embodiment is not and AlGaN layer 23 to form Schottky contacts with GaN layer 22.
Refer to Fig. 4 A-4C, show the 3rd embodiment of the present invention, the manufacturing process cross-sectional schematic of SBD200.As shown in Figure 4 A, on substrate 21, form GaN layer 22 on substrate 21.Wherein substrate 21 can be nonconducting insulated substrate, is for example and without limitation to sapphire (sapphire) substrate, can also be conductor substrate, is for example and without limitation to carborundum (SiC) substrate.Then form AlGaN layer 23 on GaN layer 22.
Then as shown in Figure 4 B, on AlGaN layer 23 wherein, insulating barrier 24 is such as but not limited to making with high dielectric material for formation insulating barrier 24, and its dielectric constant is for example higher than 3.9 of silicon dioxide.
Then as shown in Figure 4 C,, on insulating barrier 24, form anode conductive layer 25; And on AlGaN layer 23, form cathode conductive layer 26.Wherein, segment anode conductive layer 25 and AlGaN layer 23, form Schottky contacts, and 23, another part anode conductive layer 25 and AlGaN layer, by insulating barrier 24, separated; And cathode conductive layer 26 and AlGaN23 interlayer form ohmic contact (Ohmic contact), and cathode conductive layer 26 is not directly connected with anode conductive layer 25.
Fig. 5 shows the 4th embodiment of the present invention.The cross-sectional schematic of the present embodiment display application SBD400 of the present invention.Different from first embodiment, what the insulating barrier 34 of the present embodiment was looked by vertical view (not shown) is trellis, is formed between anode conductive layer 25 and GaN layer 22 or AlGaN layer 23.
Refer to Fig. 6 A-6B, show prior art SBD and the performance plot that utilizes the anode current antianode voltage of SBD of the present invention, as shown in Fig. 6 A-6B, compared to prior art SBD, utilize SBD of the present invention under same anode voltage, anode current is larger, represents to utilize SBD of the present invention, and its on state characteristic is better.
Refer to Fig. 7 A-7B, show prior art SBD and the electric field simulation performance plot that utilizes the section two dimensional of SBD of the present invention, as shown in Fig. 6 A-6B, compared to the SBD of prior art, utilize SBD of the present invention under same operation voltage, the electric field of anode edge is broken up into two peak values, and its peak value is lower, represent to utilize SBD of the present invention, its electric field is releived, thereby can increase breakdown voltage.
Refer to Fig. 8 A-8B, show prior art SBD and utilize SBD of the present invention at the electric field simulation performance plot of the vertical direction of anode edge, as shown in Fig. 8 A-8B, SBD compared to prior art, utilize SBD of the present invention under same operation voltage, the electric field of anode edge is lower, represents to utilize SBD of the present invention, its electric field is releived, thereby can increase breakdown voltage.
Refer to Fig. 9 A-9B, show prior art SBD and utilize SBD of the present invention at the electric field simulation performance plot of passage horizontal direction, as shown in Fig. 9 A-9B, compared to the SBD of prior art, utilize SBD of the present invention under same operation voltage, the electric field of anode edge is lower, Ep<Et namely, represent to utilize SBD of the present invention, its electric field is releived, thereby can increase breakdown voltage.
It should be noted that, apply SBD of the present invention, its thickness of insulating layer is less than 1 micron (um), and better execution mode is for being less than 0.1 micron (um).Represent that this insulating barrier is the work function that changes anode conductive layer, not directly utilize thicker insulating barrier to isolate electric field, it is weakened.
Below for preferred embodiment, the present invention is described, just the above, only, for making those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.Under same spirit of the present invention, those skilled in the art can think and various equivalence changes.For example, not affecting under the main characteristic of element, can add other fabrication steps or structure, as before forming cathode conductive layer, the negative electrode position prior to SBD, defines and etches ohmic contact regions etc.Scope of the present invention should contain above-mentioned and other all equivalence variations.
Claims (10)
1. a Schottky potential barrier diode, is formed on a substrate, it is characterized in that, comprises:
One gallium nitride layer, is formed on this substrate;
One aluminium gallium nitride alloy layer, is formed on this gallium nitride layer;
One insulating barrier, is formed on this aluminium gallium nitride alloy layer;
One anode conductive layer, is formed on this insulating barrier, and this anode conductive layer of part and this gallium nitride layer or this aluminium gallium nitride alloy layer, forms Schottky contacts, and this anode conductive layer of another part and this aluminium gallium nitride alloy interlayer, by this insulating barrier, is separated; And
One cathode conductive layer, is formed on this aluminium gallium nitride alloy layer, and with this aluminium gallium nitride alloy layer or this aluminium gallium nitride alloy interlayer, form an ohmic contact, and this cathode conductive layer is not directly connected with this anode conductive layer.
2. Schottky potential barrier diode as claimed in claim 1, wherein, what this insulating barrier was looked by vertical view is trellis, is formed between this anode conductive layer and this gallium nitride layer or this aluminium gallium nitride alloy layer.
3. Schottky potential barrier diode as claimed in claim 1, wherein, this substrate comprises an insulated substrate or a conductor substrate.
4. Schottky potential barrier diode as claimed in claim 1, wherein, this thickness of insulating layer is less than 1 micron.
5. Schottky potential barrier diode as claimed in claim 1, wherein, this insulating barrier has one higher than 3.9 dielectric constant.
6. a Schottky potential barrier diode fabricating method, is characterized in that, comprises:
Form a gallium nitride layer on a substrate;
Form an aluminium gallium nitride alloy layer on this gallium nitride layer;
Form an insulating barrier on this aluminium gallium nitride alloy layer;
Form an anode conductive layer on this insulating barrier, and this anode conductive layer of part and this gallium nitride layer or this aluminium gallium nitride alloy layer, form Schottky contacts, and this anode conductive layer of another part and this aluminium gallium nitride alloy interlayer, by this insulating barrier, separated; And
Form a cathode conductive layer on this aluminium gallium nitride alloy layer, and with this aluminium gallium nitride alloy layer or this aluminium gallium nitride alloy interlayer, form an ohmic contact, and this cathode conductive layer is not directly connected with this anode conductive layer.
7. Schottky potential barrier diode fabricating method as claimed in claim 6, wherein, what this insulating barrier was looked by vertical view is trellis, is formed between this anode conductive layer and this gallium nitride layer or this aluminium gallium nitride alloy layer.
8. Schottky potential barrier diode fabricating method as claimed in claim 6, wherein, this substrate comprises an insulated substrate or a conductor substrate.
9. Schottky potential barrier diode fabricating method as claimed in claim 6, wherein, this thickness of insulating layer is less than 1 micron.
10. Schottky potential barrier diode fabricating method as claimed in claim 6, wherein, this insulating barrier has one higher than 3.9 dielectric constant.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210268452.9A CN103579372A (en) | 2012-07-30 | 2012-07-30 | Schottky potential barrier diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210268452.9A CN103579372A (en) | 2012-07-30 | 2012-07-30 | Schottky potential barrier diode and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115775730A (en) * | 2023-02-13 | 2023-03-10 | 江苏能华微电子科技发展有限公司 | Quasi-vertical structure GaN Schottky diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060108659A1 (en) * | 2004-11-25 | 2006-05-25 | Matsushita Electric Industrial Co., Ltd. | Schottky barrier diode and diode array |
| US20060197175A1 (en) * | 2005-03-02 | 2006-09-07 | Manabu Yanagihara | Semiconductor device and method for manufacturing the same |
| CN101569014A (en) * | 2007-08-31 | 2009-10-28 | 住友电气工业株式会社 | Schottky barrier diode |
| US20100078683A1 (en) * | 2008-09-30 | 2010-04-01 | Sanken Electric Co., Ltd. | Semiconductor device |
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- 2012-07-30 CN CN201210268452.9A patent/CN103579372A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060108659A1 (en) * | 2004-11-25 | 2006-05-25 | Matsushita Electric Industrial Co., Ltd. | Schottky barrier diode and diode array |
| US20060197175A1 (en) * | 2005-03-02 | 2006-09-07 | Manabu Yanagihara | Semiconductor device and method for manufacturing the same |
| CN101569014A (en) * | 2007-08-31 | 2009-10-28 | 住友电气工业株式会社 | Schottky barrier diode |
| US20100078683A1 (en) * | 2008-09-30 | 2010-04-01 | Sanken Electric Co., Ltd. | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115775730A (en) * | 2023-02-13 | 2023-03-10 | 江苏能华微电子科技发展有限公司 | Quasi-vertical structure GaN Schottky diode and preparation method thereof |
| CN115775730B (en) * | 2023-02-13 | 2023-06-06 | 江苏能华微电子科技发展有限公司 | GaN Schottky diode with quasi-vertical structure and preparation method thereof |
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Application publication date: 20140212 |