CN103578965B - The once-forming method of two kinds of corrosion depths - Google Patents
The once-forming method of two kinds of corrosion depths Download PDFInfo
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- CN103578965B CN103578965B CN201210269511.4A CN201210269511A CN103578965B CN 103578965 B CN103578965 B CN 103578965B CN 201210269511 A CN201210269511 A CN 201210269511A CN 103578965 B CN103578965 B CN 103578965B
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- 238000005260 corrosion Methods 0.000 title claims abstract description 105
- 230000007797 corrosion Effects 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 208000002925 dental caries Diseases 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
Abstract
The invention discloses a kind of once-forming method of two kinds of corrosion depths, corrode from more than one porch to corrosion object including using the corrosion material with lateral encroaching characteristic.The application of the invention, it is possible to achieve the simplification of technological process, improves efficiency, reduces and produces cost, it is also possible to can shorten the production time.
Description
Technical field
The present invention relates to the manufacturing technologies such as quasiconductor, particularly relate to the etch process used in fabrication of semiconductor device.
Background technology
In the conventional technology, different corrosion depths to corrode on substrate, need repeatedly to carry out the process of " photoetching-corrosion ".A kind of method that one Chinese patent application (publication number CN1977376A) discloses etch structures, the method comprises the steps: to be the substrate of the first material etching mask using appended pattern that arranges the second material on the top of this substrate, this etching mask includes the sub-mask of at least two: cover the first sub-mask of first area with the first sub pattern, this first sub-mask the most substantially remains, and the second sub-mask of second area is covered with the second sub pattern, this second sub-mask is sacrificial mask, this sacrificial mask increases this at least etching speed in second area, to the substrate etch scheduled time.
Another part Chinese patent application (publication number CN1089370A) discloses a kind of method forming figure, comprise the following steps: on the substrate have step, form photoresist layer, with the first mask photoresist layer made ground floor expose, the position that photoresist layer is the thickest will be made to make second time exposure due to step with the second mask, and the photoresist developing of light will be exposed.Especially, the thick photoresist at step to carry out the exposure of abundance, thus avoids the formation of bridge joint or cull, and obtains the figure improving profile.
But, if it is possible to it is formed for multiple satisfactory corrosion depth by " photoetching-corrosion " process once, by simplification of flowsheet to a great extent, improves efficiency, reduce and produce cost, it is also possible to the production time can be shortened.
Summary of the invention
In order at least solve an aspect of the problems referred to above, the invention discloses the once-forming method of two kinds of corrosion depths, including: use the corrosion material with lateral encroaching characteristic to corrode from more than one porch to corrosion object.
The once-forming method of two kinds of corrosion depths according to an aspect of the present invention, including: before starting corrosion, the two corrosion depth obtained according to hope and the erosion profile wishing acquisition, carry out corroding material, entrance physical dimension and the selection of etching time.
The once-forming method of two kinds of corrosion depths according to an aspect of the present invention, wherein said entrance physical dimension includes the relative position between the distance between the size of the cross section of entrance, each entrance and each entrance.
The once-forming method of two kinds of corrosion depths according to an aspect of the present invention, the wherein said described corrosion material with lateral encroaching characteristic is TMAH or KOH.
The once-forming method of two kinds of corrosion depths according to an aspect of the present invention, wherein, spacing W between entrance, the first corrosion depth h1, the second corrosion depth h2, between longitudinal corrosion rate Vy and lateral encroaching speed Vx, meet following relation: W=(h1-h2) × (2 × Vx)/Vy, wherein h1 > h2.
The once-forming method of two kinds of corrosion depths according to an aspect of the present invention, wherein, meets following relation: t=h1/Vy between etching time t, the first corrosion depth h1 and longitudinal corrosion rate Vy.
The invention also discloses the engraving method of a kind of semiconductor device, including: in wafer rotary course, coat photoresist；Use mask that the wafer scribbling described photoresist is exposed, and remove the photoresist dissolved；And use the corrosion material with lateral encroaching characteristic to corrode the wafer segment come out from more than one porch, with once-forming two kinds of corrosion depths；Before starting corrosion, the two kinds of corrosion depths obtained according to hope, carry out corroding material, entrance physical dimension and the selection of etching time.
The engraving method of semiconductor device according to an aspect of the present invention, the described corrosion material wherein with lateral encroaching characteristic is TMAH or KOH.
The engraving method of semiconductor device according to an aspect of the present invention, wherein, spacing W between entrance, the first corrosion depth h1, the second corrosion depth h2, between longitudinal corrosion rate Vy and lateral encroaching speed Vx, meet following relation: W=(h1-h2) × (2 × Vx)/Vy, wherein h1 > h2.
Engraving method according to an aspect of the present invention, wherein, meets following relation: t=h1/Vy between etching time t, the first corrosion depth h1 and longitudinal corrosion rate Vy.
The application of the invention, it is possible to achieve the simplification of technological process, improves efficiency, reduces and produces cost, it is also possible to can shorten the production time.
Accompanying drawing explanation
Described further below by reading, and with reference to accompanying drawing, one can be had more fully to understand the present invention.In accompanying drawing:
Fig. 1 shows a kind of corrosion masking layer figure；
Fig. 2 shows the etch state of the first stage forming two kinds of corrosion depths according to an embodiment of the invention；
Fig. 3 shows the etch state of the second stage forming two kinds of corrosion depths according to an embodiment of the invention；
Fig. 4 shows the etch state of the phase III forming two kinds of corrosion depths according to an embodiment of the invention；
Fig. 5 shows that another corrodes masking layer figure.
Detailed description of the invention
The starting point of the manufacture process of semiconductor device is quartz, and it is presented in silicon dioxide.In silicon smelting technology, purified the silicon that can obtain for semiconductor manufacturing quality, i.e. electronic-grade silicon by multistep.Silicon after melting is presented in monocrystal silicon, and its entirety is substantially cylindrical.Monocrystal silicon is cut laterally conglobate single silicon chip, i.e. wafer.
Rotated by wafer, photoresist can be uniformly coated with on wafer.Then, photoresist layer is exposed under ultraviolet light through mask.Photoresist after exposure becomes solvable.After removing the photoresist being dissolved, remaining photoresist layer just becomes the corrosion masking layer used by corrosion process, in order to cover the part that need not be corroded.Corrosion masking layer can have different shapes according to concrete required circuit structure.Fig. 1 is the top view of the corrosion masking layer figure of an example, is the top view of another corrosion masking layer figure in Fig. 5.
In the corrosion masking layer figure shown in Fig. 1, rectangle 101,102 and 103 represents the part being dissolved in exposure process.These three part will be the entrance adding corrosion material.In the present invention, the corrosion material added at entrance has lateral encroaching characteristic, including liquid or gas.It is it may be that materials such as such as TMAH or KOH.This bi-material process stabilizing, reproducible, it is particularly well-suited to the present invention.
Fig. 2 is the profile of the wafer 210 having coated photoresist layer 200.It is illustrated that the first stage of corrosion process.Entrance 101,102 and 103 in Fig. 1 corresponds respectively to the entrance 201,202 and 203 in Fig. 2.Corrode respectively below entrance 201,202 and 203 and cavity 211,212 and 213.In the first stage of corrosion process, the numerical value of the depth and width of three cavitys is all little, does not connects.
Fig. 3 shows after have passed through a period of time, has eaten into situation during second stage.Corrode respectively below 3 entrances of corrosion material and cavity 311,312 and 313.In the second stage of corrosion process, the lateral encroaching characteristic of corrosion material more highlights.Therefore, not only the degree of depth of three cavitys 311,312 and 313 is bigger, and its width also increases, and comes into contact with in the top edge of cavity.
Fig. 4 is the phase III of corrosion process, it is shown that the final result of corrosion.Corrode respectively below 3 entrances 401,402 and 403 of corrosion material and cavity 411,412 and 413.In the phase III of corrosion process, corrosion expands further, shows as the degree of depth and deepens further, and width also further expands.In the outside of 2 outside cavitys 411 and 413, the expansion of single cavity width makes the cross section of whole cavity area increase.And the upper part at the edge between each cavity has been corroded so that each cavity is full communicating in top half.And the latter half is distant due to the entrance of distance corrosion material, corrosion material is not applied to, thus still there is " wall " at boundary.Therefore eroded to the phase III, base material has occurred as soon as desired two kinds of depth structures.One is the bottom of each cavity self, the most then be cavity with cavity before the bottom of boundary.The former is deeper, as the first corrosion depth.The latter is shallower, as the second corrosion depth.
By selecting different corrosion materials, corrosive effect can correspondingly change.Additionally, regulation applies physical dimension and the etching time of the entrance of corrosion material, two kinds of corrosion depths and erosion profile can be adjusted.Here physical dimension includes the relative position etc. between distance and each entrance between the size of cross section of entrance, each entrance.Such as, for given corrosion material, if the distance between the entrance increased in Fig. 2 to Fig. 4, so in same etching time, bigger the first corrosion depth of the degree of depth is essentially without being affected, and " wall " between cavity as shown in Figure 4 can be higher, the second corrosion depth i.e. formed can reduce.
Additionally, on the premise of also in given corrosion material, if keeping the distance between entrance constant, but increase etching time, then the degree of depth is bigger the first corrosion depth and less the second corrosion depth of the degree of depth all will be affected, and all by increase.Above-mentioned change can obtain the result quantified by the way of theoretical derivation, Computer Simulation or experiment.In order to obtain intended effect, corrosion material, entrance physical dimension and etching time can be carried out suitable selection simultaneously, or one or two therein is selected.
What the W in Fig. 1 and Fig. 4 represented is the spacing of corrosion entrance, and h is difference in height h of two kinds of steps that corrosion is formed, and it can be approximated to be:
W=h × (2 × Vx)/Vy
Wherein, Vy represents longitudinal corrosion rate, and Vx represents lateral encroaching speed.Horizontal and vertical corrosion rate is all determined by corrosion properties of materials.
In the diagram, h1 represents the first order of the corrosion step of the first corrosion depth, i.e. higher depth, and h2 represents the second corrosion depth, is the second level of corrosion step.Difference in height h=h1-h2 of step.
It addition, etching time t=h1/Vy.
Therefore, conductor etching process will include following step.First in wafer rotary course, photoresist is coated.This step can be included as removing the cleaning, drying that the granule of crystal column surface, Organic substance, technique remnants and steam are carried out；So that crystal column surface has hydrophobicity, strengthens substrate surface and the adhesion of photoresist and carry out linging；And last static gluing or dynamic gluing.
Then use mask that the wafer scribbling described photoresist is exposed.Expose and have several basic mode:
(1) contact exposure.Mask plate directly contacts with photoresist layer.Exposure figure out is suitable with the graphics resolution on mask plate.The advantage of this Exposure mode is that equipment is simple, and its shortcoming is that photoresist pollutes mask plate, and can cause the abrasion of mask plate.
(2) proximity printing.Mask plate is slightly spaced with photoresist layer, can avoid directly contacting with photoresist and cause mask plate damage.But it is simultaneously introduced diffraction effect, reduces resolution.
(3) projection exposure.Use lens to assemble light between mask plate and photoresist and realize exposure.So can improve resolution so that the making of mask plate is more prone to, and the defective effect on mask plate also can reduce.
The photoresist being exposed will become solvable.After dissolving with developer liquids and disposing this part photoresist, wafer needs the part being corroded just to come out.
Finally, use the above corrosion material with lateral encroaching characteristic that wafer is corroded, and note corroding physical dimension and the etching time of choosing and apply to corrode the entrance of material of material, it is possible to obtain the desired wafer with two kinds of corrosion depths.
Equally, during above-mentioned caustic solution and engraving method can be used for the manufacture field in the field beyond semiconductor technology, such as optics.
Although accompanying drawing and detailed description above describe the preferred embodiments of the invention, it should be understood, however, that, the invention is not limited in the embodiment of concrete announcement, on the premise of the scope specified without departing from claim, still can have multiple amendment and deformation.
Claims (7)
1. the once-forming method of two kinds of corrosion depths, including:
The two corrosion depth obtained according to hope and the erosion profile wishing acquisition, carry out corroding material, entrance physical dimension and the selection of etching time；
The corrosion material with lateral encroaching characteristic is used to corrode from more than one porch to corrosion object；
Wherein, spacing W between entrance, the first corrosion depth h1, the second corrosion depth h2, meet following relation between longitudinal corrosion rate Vy and lateral encroaching speed Vx:
W=(h1-h2) × (2 × Vx)/Vy, wherein h1 > h2.
The once-forming method of two kinds of corrosion depths the most as claimed in claim 1, wherein said entrance physical dimension includes the relative position between the distance between the size of the cross section of entrance, each entrance and each entrance.
3. the once-forming method of two kinds of corrosion depths as described in any one in claim 1-2, the wherein said described corrosion material with lateral encroaching characteristic is TMAH or KOH.
The once-forming method of two kinds of corrosion depths the most as claimed in claim 1, wherein, meets following relation between etching time t, the first corrosion depth h1 and longitudinal corrosion rate Vy:
t=h1/Vy。
5. an engraving method for semiconductor device, including:
Photoresist is coated in wafer rotary course；
Use mask that the wafer scribbling described photoresist is exposed, and remove the photoresist dissolved；And
The corrosion material with lateral encroaching characteristic is used to corrode the wafer segment come out from more than one porch, with once-forming two kinds of corrosion depths；
Before starting corrosion, the two kinds of corrosion depths obtained according to hope, carry out corroding material, entrance physical dimension and the selection of etching time；
Wherein, spacing W between entrance, the first corrosion depth h1, the second corrosion depth h2, meet following relation between longitudinal corrosion rate Vy and lateral encroaching speed Vx:
W=(h1-h2) × (2 × Vx)/Vy, wherein h1 > h2.
6. the engraving method of semiconductor device as claimed in claim 5, the described corrosion material wherein with lateral encroaching characteristic is TMAH or KOH.
7. the engraving method of semiconductor device as claimed in claim 5, wherein, meets following relation between etching time t, the first corrosion depth h1 and longitudinal corrosion rate Vy:
t=h1/Vy。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210269511.4A CN103578965B (en) | 2012-07-31 | 2012-07-31 | The once-forming method of two kinds of corrosion depths |
| PCT/CN2013/080575 WO2014019523A1 (en) | 2012-07-31 | 2013-07-31 | One-step forming method of two corrosion depths |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210269511.4A CN103578965B (en) | 2012-07-31 | 2012-07-31 | The once-forming method of two kinds of corrosion depths |
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| Publication Number | Publication Date |
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| CN103578965A CN103578965A (en) | 2014-02-12 |
| CN103578965B true CN103578965B (en) | 2016-08-03 |
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| CN201210269511.4A Active CN103578965B (en) | 2012-07-31 | 2012-07-31 | The once-forming method of two kinds of corrosion depths |
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| WO (1) | WO2014019523A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583058A (en) * | 1992-09-17 | 1996-12-10 | Mitsubishi Denki Kabushiki Kaisha | Infrared detection element array and method for fabricating the same |
| EP1764343A2 (en) * | 2005-09-16 | 2007-03-21 | DALSA Semiconductor Inc. | Method for etching a structured cavity with a single mask |
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957592A (en) * | 1989-12-27 | 1990-09-18 | Xerox Corporation | Method of using erodable masks to produce partially etched structures in ODE wafer structures |
| CN1260784C (en) * | 2003-12-11 | 2006-06-21 | 西安交通大学 | Two-stage step structured wet chemical corrosion method for silicon semiconductor device |
| JP2005183419A (en) * | 2003-12-16 | 2005-07-07 | Ricoh Co Ltd | Processing method of silicon substrate |
| CN1959939A (en) * | 2005-11-03 | 2007-05-09 | 茂德科技股份有限公司 | Etching method, and method for forming opening |
-
2012
- 2012-07-31 CN CN201210269511.4A patent/CN103578965B/en active Active
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- 2013-07-31 WO PCT/CN2013/080575 patent/WO2014019523A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583058A (en) * | 1992-09-17 | 1996-12-10 | Mitsubishi Denki Kabushiki Kaisha | Infrared detection element array and method for fabricating the same |
| EP1764343A2 (en) * | 2005-09-16 | 2007-03-21 | DALSA Semiconductor Inc. | Method for etching a structured cavity with a single mask |
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
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| Publication number | Publication date |
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| CN103578965A (en) | 2014-02-12 |
| WO2014019523A1 (en) | 2014-02-06 |
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