CN103553047A - Method and system for producing polycrystalline silicon product in reactor - Google Patents
Method and system for producing polycrystalline silicon product in reactor Download PDFInfo
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- CN103553047A CN103553047A CN201310544194.7A CN201310544194A CN103553047A CN 103553047 A CN103553047 A CN 103553047A CN 201310544194 A CN201310544194 A CN 201310544194A CN 103553047 A CN103553047 A CN 103553047A
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- reactor
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 196
- 239000000203 mixture Substances 0.000 claims description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
- 239000001257 hydrogen Substances 0.000 claims description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 6
- 239000005052 trichlorosilane Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 150000004756 silanes Chemical class 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention relates to a method for producing a polycrystalline silicon product in a reactor. The reactor comprises a reaction chamber and a gas distribution unit used for evenly distributing a gas into the reaction chamber, wherein the reaction chamber comprises at least one reaction chamber wall. The method is characterized by comprising the steps of feeding and transmitting a first gas to the reaction chamber through first-layer gas inlets of the gas distribution unit; feeding and transmitting a second gas to the reaction chamber through second-layer gas inlets of the gas distribution unit; feeding and transmitting a third gas to the reaction chamber through third-layer gas inlets of the gas distribution unit; and contacting silicon particles with a thermally decomposed silicon compound in the reaction chamber so as to deposit silicon onto silicon particles and increase the particle size. Under the condition that the reaction space in a fluidized bed is not influenced, the silicon deposition quantity of the reactor wall can be reduced, the reaction efficiency can be improved, and the production cost can be lowered.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of polycrystalline silicon production, in particular to a method and a system for producing polycrystalline silicon products in a reactor.
[ background of the invention ]
Fluidized bed reactors are used to carry out heterogeneous reactions. In a typical fluidized bed reactor system, a fluid is passed through a bed of granular material such as catalyst or growing product particles. The flow of fluid causes the bed of particulate material to become fluidized in the reactor.
In many fluidized bed reactor systems, particularly in systems where material from the fluid phase is chemically decomposed to form solid material, solids may deposit on the walls of the reactor. Wall deposits often alter the geometry of the reactor, which can reduce reactor performance. In addition, some of the wall deposits may fall off the reactor wall and fall to the bottom of the reactor. Reactor systems often must be taken out of service to remove the dislodged deposits. To prevent untimely reactor shut-down, deposits must be periodically etched away from the reactor walls and the reactor must be cleaned, thereby reducing the reactor productivity. These problems are particularly acute in fluidized bed reactor systems used for the production of polycrystalline silicon.
Accordingly, there is a need for a reactor system and method for producing polycrystalline silicon that limits or reduces the amount of deposits that form on the reactor walls.
[ summary of the invention ]
Based on this, there is a need for a method and a fluidized bed system for producing polycrystalline silicon product in a reactor.
To this end, a method for producing a polycrystalline silicon product in a reactor comprising a reaction chamber and a gas distribution unit for uniformly distributing gas into the reaction chamber, the reaction chamber comprising at least one reaction chamber wall, the method comprising:
feeding and delivering a first gas to a reaction chamber via a first layer of gas inlets of the gas distribution unit;
feeding and delivering a second gas to the reaction chamber via a second layer gas inlet of the gas distribution unit;
feeding and delivering a third gas to the reaction chamber via a third layer gas inlet of the gas distribution unit;
and contacting the silicon particles with a thermally decomposable silicon compound in the reaction chamber to deposit silicon onto the silicon particles and increase the particle size;
wherein,
the first layer air inlet, the second layer air inlet and the third layer air inlet are sequentially arranged on the gas distribution unit from outside to inside;
the first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order.
In a preferred embodiment, the first gas comprises a gas composition of 97.5 to 98.5 mole percent hydrogen and 1.5 to 2.5 mole percent of a thermally decomposable gaseous silicon compound;
the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound;
the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound.
In a preferred embodiment, the temperature on the surface of the reactor is 800 to 1400 degrees celsius.
In a preferred embodiment, the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof.
The invention also provides a fluidized bed reactor system for producing the polycrystalline silicon product in the reactor, which comprises a reaction chamber and a gas distribution unit for uniformly distributing gas into the reaction chamber, wherein the reaction chamber comprises at least one reaction chamber wall, and the gas distribution unit at least comprises a first layer of gas inlets, a second layer of gas inlets and a third layer of gas inlets, wherein the first layer of gas inlets are arranged from outside to inside and communicated with the first gas chamber and used for conveying the first gas, the second layer of gas inlets are communicated with the second gas chamber and used for conveying the second gas, and the third layer of gas inlets are communicated with the third gas chamber and used for conveying the third gas;
the first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order.
In a preferred embodiment, the first gas comprises a gas composition of 97.5 to 98.5 mole percent hydrogen and 1.5 to 2.5 mole percent of a thermally decomposable gaseous silicon compound;
the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound;
the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound.
In a preferred embodiment, the temperature on the surface of the reactor is 800 to 1200 degrees celsius; the thermally decomposable compound is selected from silanes, trichlorosilane, and mixtures thereof.
In a preferred embodiment, the gas distribution unit further comprises:
the first gas chamber, the second gas chamber and the third gas chamber are not communicated with each other.
In a preferred embodiment, the first layer of air inlets, the second layer of air inlets or the third layer of air inlets are formed by a circular hole interval arrangement.
In a preferred embodiment, the first layer air inlet, the second layer air inlet or the third layer air inlet is an annular gap.
The method for producing polycrystalline silicon product in the reactor and the fluidized bed system of the embodiment have the following beneficial effects: the silicon deposition amount of the reactor wall can be reduced under the condition of not influencing the reaction space in the fluidized bed, the reaction efficiency is improved, and the manufacturing cost is reduced.
[ description of the drawings ]
FIG. 1 is a schematic view of a reactor according to the present embodiment;
FIG. 2 is a schematic view of an example of a gas distribution unit of the reactor according to the present embodiment;
FIG. 3 is a schematic view of an embodiment of a gas inlet layer of a gas distribution unit of the reactor according to the present embodiment;
fig. 4 is a schematic view of another embodiment of the gas distribution unit gas inlet layer of the reactor according to the present embodiment.
[ detailed description ] embodiments
The method and fluidized bed system for producing a polycrystalline silicon product in a reactor will be described in detail with reference to fig. 1 to 4.
The fluidized bed reactor system described herein, referring now to fig. 1, the reactor system 10, comprises a reaction chamber 20 comprising at least one reaction chamber wall 21, and a gas distribution unit 30 for uniformly distributing gas into the reaction chamber, the temperature on the surface of the reactor being 800 to 1200 degrees celsius.
The gas distribution unit 30 is shown in more detail in fig. 2. The gas distribution unit 30 is adapted for distributing a first gas, a second gas and a third gas to the fluidized bed reactor, in particular for distributing a carrier gas and a thermally decomposable gas to the fluidized bed reactor. The gas distribution unit 30 at least comprises a first layer gas inlet 31 communicated with the first gas chamber 41 and used for conveying a first gas, a second layer gas inlet 32 communicated with the second gas chamber 42 and used for conveying a second gas, and a third layer gas inlet 43 communicated with the third gas chamber 43 and used for conveying a third gas, which are sequentially arranged from outside to inside.
The reactor system of the present invention further comprises a product withdrawal line extending through the gas distribution unit 30. Product particles may be drawn from the tube and transferred to the product reservoir. The exhaust gas exits the reaction chamber 10 and may be introduced into another processing unit.
The first gas chamber 41, the second gas chamber 42, and the third gas chamber 43 are used for providing the first gas, the second gas, and the third gas, respectively, and are not communicated with each other.
The "first gas", "second gas" and "third gas" used in the present invention are gases having different compositions. The first gas, the second gas, and the third gas may comprise a plurality of gaseous compounds, as long as the mass composition or molar composition of at least one compound in the first gas is different from the composition of that compound in the second gas. The first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order. Among them, the preferred embodiment is a gas composition in which the first gas contains 97.5 to 98.5 mol% of hydrogen and 1.5 to 2.5 mol% of a thermally decomposable gaseous silicon compound; the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound; the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound. Wherein the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof.
Referring to fig. 3, the first layer inlet 31, the second layer inlet 32 or the third layer inlet 33 are formed by circular holes arranged at intervals.
Referring to fig. 4, the first layer inlet 31, the second layer inlet 32 or the third layer inlet 33 are annular gaps. Besides, the annular gap can be a communicated gap or a spacing gap.
In addition, the gas distribution unit 30 may also include more than 3 layers of gas inlets for smoother transition gas concentrations, depending on actual production requirements.
Cooling channels may also be provided in the gas distribution unit 30. A fluid (e.g., air or a cooling liquid) is circulated in the cooling channel to cool the gas distribution unit 30 below a thermal decomposition temperature of the thermally decomposable gaseous silicon compound from the first gas, the second gas, or the third gas. The cooling channels prevent material from being deposited on the first layer inlet 31, the second layer inlet 32 or the third layer inlet 33 of the gas distribution unit 30.
Based on the above reactor system, the present invention also provides a method for producing a polycrystalline silicon product in a reactor, comprising:
feeding and delivering a first gas to the reaction chamber 20 via a first layer gas inlet 31 of the gas distribution unit 30;
feeding and delivering a second gas to the reaction chamber 20 via a second layer gas inlet 32 of the gas distribution unit 30;
feeding and delivering a third gas to the reaction chamber 20 via a third layer gas inlet 33 of the gas distribution unit 30;
and contacting the silicon particles with a thermally decomposable silicon compound in reaction chamber 20 to deposit silicon onto the silicon particles and increase the particle size;
the first layer gas inlet 31, the second layer gas inlet 33 and the third layer gas inlet 33 are sequentially arranged on the gas distribution unit 30 from outside to inside; the first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order.
In a preferred embodiment, the first gas comprises a gas composition of 97.5 to 98.5 mole percent hydrogen and 1.5 to 2.5 mole percent of a thermally decomposable gaseous silicon compound; the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound; the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound.
The surface temperature of the reactor wall 21 is 800 to 1400 degrees celsius. Preferably 900 to 1000 degrees celsius in the preferred embodiment. Wherein the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof.
The particular embodiments set forth above are not intended to be limiting and it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the scope of the invention.
Claims (10)
1. A method for producing a polycrystalline silicon product in a reactor comprising a reaction chamber and a gas distribution unit for uniformly distributing gas into the reaction chamber, the reaction chamber comprising at least one reaction chamber wall, characterized in that the method comprises:
feeding and delivering a first gas to a reaction chamber via a first layer of gas inlets of the gas distribution unit;
feeding and delivering a second gas to the reaction chamber via a second layer gas inlet of the gas distribution unit;
feeding and delivering a third gas to the reaction chamber via a third layer gas inlet of the gas distribution unit;
and contacting the silicon particles with a thermally decomposable silicon compound in the reaction chamber to deposit silicon onto the silicon particles and increase the particle size;
wherein,
the first layer air inlet, the second layer air inlet and the third layer air inlet are sequentially arranged on the gas distribution unit from outside to inside;
the first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order.
2. The method of claim 1, wherein the first gas comprises a gas composition of 97.5 to 98.5 mole percent hydrogen and 1.5 to 2.5 mole percent thermally decomposable gaseous silicon compound;
the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound;
the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound.
3. The method of claim 1, wherein the temperature on the surface of the reactor is 800 to 1400 degrees celsius.
4. The method of claim 1, wherein the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof.
5. A fluidized bed reactor system comprises a reaction chamber and a gas distribution unit for uniformly distributing gas into the reaction chamber, wherein the reaction chamber comprises at least one reaction chamber wall, and is characterized in that the gas distribution unit at least comprises a first layer gas inlet, a second layer gas inlet and a third layer gas inlet, wherein the first layer gas inlet is communicated with a first gas chamber and used for conveying first gas, the second layer gas inlet is communicated with a second gas chamber and used for conveying second gas, and the third layer gas inlet is communicated with a third gas chamber and used for conveying third gas, which are sequentially arranged from outside to inside;
the first gas, the second gas and the third gas are all gas compositions containing hydrogen and a gaseous silicon compound capable of being thermally decomposed by the reactor; and the hydrogen content in the first gas, the second gas and the third gas decreases in order, and the gas composition of the thermally decomposable gaseous silicon compound increases in order.
6. The system of claim 5, wherein the first gas comprises a gas composition of 97.5 to 98.5 mole percent hydrogen and 1.5 to 2.5 mole percent thermally decomposable gaseous silicon compound;
the second gas comprises a gaseous composition of 60 to 80 mole% hydrogen and 20 to 40 mole% of a thermally decomposable gaseous silicon compound;
the third gas comprises a gaseous composition of 10 to 20 mole% hydrogen and 80 to 90 mole% of a thermally decomposable gaseous silicon compound.
7. The system of claim 5, wherein the temperature on the surface of the reactor is 800 to 1200 degrees Celsius;
the thermally decomposable compound is selected from silanes, trichlorosilane, and mixtures thereof.
8. The system of claim 6 or 7, wherein the gas distribution unit further comprises:
the first gas chamber, the second gas chamber and the third gas chamber are not communicated with each other.
9. The system of claim 8, wherein the first, second, or third layer of air inlets are comprised of a circular array of spaced holes.
10. The system of claim 8, wherein the first layer of air inlets, the second layer of air inlets, or the third layer of air inlets are annular slots.
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| CN201310544194.7A CN103553047A (en) | 2013-11-06 | 2013-11-06 | Method and system for producing polycrystalline silicon product in reactor |
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| CN201310544194.7A CN103553047A (en) | 2013-11-06 | 2013-11-06 | Method and system for producing polycrystalline silicon product in reactor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3278872A4 (en) * | 2015-04-01 | 2019-01-16 | Hanwha Chemical Corporation | Gas distribution device for fluidised-bed reactor system, fluidised-bed reactor system comprising gas distribution device, and method for preparing granular polysilicon using fluidised-bed reactor system |
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| EP2019084A2 (en) * | 2007-07-27 | 2009-01-28 | Joint Solar Silicon GmbH & Co. KG | Method and reactor for producing silicon |
| CN102083522A (en) * | 2008-06-30 | 2011-06-01 | Memc电子材料有限公司 | Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls |
| CN102333585A (en) * | 2008-11-05 | 2012-01-25 | 赫姆洛克半导体公司 | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
| CN102686307A (en) * | 2009-12-29 | 2012-09-19 | Memc电子材料有限公司 | Methods for reducing the deposition of silicon on reactor walls using peripheral silicon tetrachloride |
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Patent Citations (5)
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| CN101258105A (en) * | 2005-09-08 | 2008-09-03 | 瓦克化学股份公司 | Method and device for producing granulated polycrystalline silicon in a fluidised-bed reactor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3278872A4 (en) * | 2015-04-01 | 2019-01-16 | Hanwha Chemical Corporation | Gas distribution device for fluidised-bed reactor system, fluidised-bed reactor system comprising gas distribution device, and method for preparing granular polysilicon using fluidised-bed reactor system |
| US10518237B2 (en) | 2015-04-01 | 2019-12-31 | Hanwha Chemical Corporation | Gas distribution unit for fluidized bed reactor system, fluidized bed reactor system having the gas distribution unit, and method for preparing granular polycrystalline silicon using the fluidized bed reactor system |
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