CN103512429A - Composite semi-conductor bridge - Google Patents
Composite semi-conductor bridge Download PDFInfo
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- CN103512429A CN103512429A CN201310501658.6A CN201310501658A CN103512429A CN 103512429 A CN103512429 A CN 103512429A CN 201310501658 A CN201310501658 A CN 201310501658A CN 103512429 A CN103512429 A CN 103512429A
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Abstract
The invention discloses a composite semi-conductor bridge which comprises a semi-conductor layer and a metal bottom layer deposited on the semi-conductor layer, wherein a first electrode and a second electrode are deposited on the metal bottom layer; an igniting substance is deposited on the metal bottom layer and comprises at least two metal layers and at least two metal oxide layers, and the metal layers and the metal oxide layers are deposited in a cross manner. The composite semi-conductor bridge has the advantages that a new structure is adopted, the igniting substance adopts a composite structure, and the control accuracy is high.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular a kind of compound semiconductive bridge for igniting such as cannon ammunitions.
Background technology
Semiconductive bridge is a kind of semiconductor conducting function that utilizes, make semiconductor after energising and on ignition material release energy rapidly and produce the micro element structure of the high heat of high temperature.The structure of existing semiconductive bridge is as shown in Fig. 2, and label 9 is silicon chip or blue empty ground mass sheet, and label 8 is silicon coating.Semiconductive bridge contains explosive, and bridge silk device is implanted in silicon chip or blue empty ground mass sheet, and it has very high thermal conductivity.When a low current is when the bridge silk, its heat is by substrate absorption, when have high electric current by time, because bridge silk is tiny, thereby it is evaporated very soon, vapours is still continuing conduction, more and more hotter, final explosive blasting is also got angry.Adopt existing semiconductive bridge to get angry, due to difficult assurance of control of vapours evaporation process time, the precision that its control effect is the time of ignition is not high, and for the higher occasion of control accuracy, it is not too applicable.
Summary of the invention
The invention provides a kind of compound semiconductive bridge, it adopts new structure, and the material of getting angry adopts composite construction, and control accuracy is high.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
A kind of compound semiconductive bridge, it comprises semiconductor layer and is deposited on the metal back layer on semiconductor layer, on described metal back layer, deposit the first electrode and the second electrode, on described metal back layer, deposit ignition material, described ignition material comprises metal level and metal oxide layer, and described metal level and metal oxide layer have respectively two-layer and metal level and metal oxide layer intersection deposition at least.
Further technical scheme is:
As preferably, also comprise substrate and be deposited on the insulating barrier on substrate, described semiconductor layer is deposited on insulating barrier, and described semiconductor layer is silicon.
As preferably, the metal level of described ignition material one end is deposited on metal back layer.
As preferably, described metal level is titanium, tungsten, cobalt or polymer.
Further, described polymer is for containing F polymer or containing CL polymer.
As preferably, the first described electrode and the second electrode are copper or aluminium.
As preferably, the thick end of described metal back layer, is greater than 1 millimeter and be less than 2 millimeters.
Further, the thickness of described semiconductor layer is greater than 0.5 millimeter and be less than 1 millimeter.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention utilizes the composite attribute of semi-conductive characteristic and ignition material, and after energising, the temperature of semiconductor layer raises rapidly, and due to the compound intersection deposition of ignition material, the material that can make rapidly to get angry is got angry, and speed of ignition promotes, and control accuracy is improved.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of existing semiconductive bridge.
Label in Fig. 1 is: 1, substrate; 2, insulating barrier; 3, semiconductor layer; 4, metal back layer; 5, the first electrode; 6, the second electrode; 7, ignition material.
The specific embodiment
The igniting that is mainly used in cannon ammunition etc. of the present invention.Below in conjunction with accompanying drawing, the present invention is further illustrated, and embodiments of the present invention include but not limited to the following example.
[embodiment]
A kind of compound semiconductive bridge as shown in Figure 1, it comprises semiconductor layer 3 and is deposited on the metal back layer 4 on semiconductor layer 3, on described metal back layer 4, deposit the first electrode 5 and the second electrode 6, on described metal back layer 4, deposit ignition material, described ignition material comprises metal level and metal oxide layer, and described metal level and metal oxide layer have respectively two-layer and metal level and metal oxide layer intersection deposition at least.The present invention adopts new structure, need in semiconductive bridge, not pack explosive into, directly utilizes semi-conductive characteristic to make fast to get angry material and gets angry; The material of getting angry adopts the complex method of metal level and metal oxide layer intersection deposition, can effectively improve the rate of rise in temperature of ignition material, to improve the control accuracy of whole semiconductive bridge.
Also comprise substrate 1 and be deposited on the insulating barrier 2 on substrate 1, described semiconductor layer 3 is deposited on insulating barrier 2, and described semiconductor layer 3 is silicon.1 pair of whole semiconductive bridge of substrate plays a supportive role, and insulating barrier 2, for isolated substrate 1 and semiconductor layer 3, also shields to semiconductor layer 3.
The metal level of described ignition material one end is deposited on metal back layer 4.The material of getting angry mutually intersects deposition by metal level and metal oxide layer and forms, and the metal oxide that the metal level of one end is deposited on metal back layer Shang Yu one end is deposited on metal back layer, and speed that its heat is transmitted is fast, can effectively improve the precision of control.
Described metal level is titanium, tungsten, cobalt or polymer.
Described polymer is for containing F polymer or containing CL polymer.
The first described electrode 5 and the second electrode 6 are copper or aluminium.Copper or aluminium cheap, be easy to get, and electric conductivity is good, can reduce the price of whole semiconductive bridge.
The rising of metal back layer 4 temperature raises semi-conductive temperature, and the speed that metal back layer 4 temperature raise is on the certain basis of voltage, and relevant with resistance sizes, resistance is larger, and its electrothermal calefactive rate is slower; Resistance is less, and its electrothermal calefactive rate is faster.And the thickness of metal back layer 4 has determined the size of the resistance of metal back layer 4, thickness and resistance sizes are inversely proportional to, and in order to make the power of metal back layer 4 enough large, the thick end of described metal back layer 4 is greater than 1 millimeter and be less than 2 millimeters.
In order effectively cannon ammunition to be lighted, the thickness of described semiconductor layer 3 is greater than 0.5 millimeter and be less than 1 millimeter.
The utilization of the present embodiment the principle of the temperature positive feedback that semiconductor layer resistance reduces to cause while raising, specific as follows:
When giving the first electrode and the second electrifying electrodes, metal back layer conductive exothermal, raises semiconductor layer temperature it under and resistance reduces, so electric current further increases, and temperature raises rapidly, makes the ignescent particle on it fiery.
Be as mentioned above embodiments of the invention.The present invention is not limited to above-mentioned embodiment, and anyone should learn the structural change of making under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, within all falling into protection scope of the present invention.
Claims (8)
1. a compound semiconductive bridge, it is characterized in that: it comprises semiconductor layer (3) and is deposited on the metal back layer (4) on semiconductor layer (3), on described metal back layer (4), deposit the first electrode (5) and the second electrode (6), described metal back layer deposits ignition material on (4), described ignition material comprises metal level and metal oxide layer, and described metal level and metal oxide layer have respectively two-layer and metal level and metal oxide layer intersection deposition at least.
2. a kind of compound semiconductive bridge according to claim 1, it is characterized in that: also comprise substrate (1) and be deposited on the insulating barrier (2) on substrate (1), it is upper that described semiconductor layer (3) is deposited on insulating barrier (2), and described semiconductor layer (3) is silicon.
3. a kind of compound semiconductive bridge according to claim 1, is characterized in that: the metal level of described ignition material one end is deposited on metal back layer (4).
4. according to a kind of compound semiconductive bridge described in claim 1 or 3, it is characterized in that: described metal level is titanium, tungsten, cobalt or polymer.
5. a kind of compound semiconductive bridge according to claim 4, is characterized in that: described polymer is for containing F polymer or containing CL polymer.
6. a kind of compound semiconductive bridge according to claim 1, is characterized in that: described the first electrode (5) and the second electrode (6) are copper or aluminium.
7. a kind of compound semiconductive bridge according to claim 1, is characterized in that: the thick end of described metal back layer (4) is greater than 1 millimeter and be less than 2 millimeters.
8. according to a kind of compound semiconductive bridge described in claim 1 or 7, it is characterized in that: the thickness of described semiconductor layer (3) is greater than 0.5 millimeter and be less than 1 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310501658.6A CN103512429A (en) | 2013-10-23 | 2013-10-23 | Composite semi-conductor bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310501658.6A CN103512429A (en) | 2013-10-23 | 2013-10-23 | Composite semi-conductor bridge |
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| CN103512429A true CN103512429A (en) | 2014-01-15 |
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| CN201310501658.6A Pending CN103512429A (en) | 2013-10-23 | 2013-10-23 | Composite semi-conductor bridge |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925734A (en) * | 2015-04-13 | 2015-09-23 | 中北大学 | Near field thermal-radiation charge-free MEMS ignition chip capable of efficiently transmitting heat and a preparation method thereof |
| CN114199081A (en) * | 2020-09-17 | 2022-03-18 | 大毅科技股份有限公司 | Firing resistor and method for manufacturing the same |
Citations (4)
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| CN1350631A (en) * | 1999-06-15 | 2002-05-22 | 恩赛-比克福德公司 | Voltage-protected semiconductor bridge igniter elements |
| CN101036034A (en) * | 2004-10-04 | 2007-09-12 | 日本化药株式会社 | Semiconductor bridge device and igniter provided with semiconductor bridge device |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter and gas generator |
| CN203572338U (en) * | 2013-10-23 | 2014-04-30 | 成都市宏山科技有限公司 | Composite semiconductor bridge |
-
2013
- 2013-10-23 CN CN201310501658.6A patent/CN103512429A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350631A (en) * | 1999-06-15 | 2002-05-22 | 恩赛-比克福德公司 | Voltage-protected semiconductor bridge igniter elements |
| CN101036034A (en) * | 2004-10-04 | 2007-09-12 | 日本化药株式会社 | Semiconductor bridge device and igniter provided with semiconductor bridge device |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter and gas generator |
| CN203572338U (en) * | 2013-10-23 | 2014-04-30 | 成都市宏山科技有限公司 | Composite semiconductor bridge |
Non-Patent Citations (1)
| Title |
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| 张文超: ""复合半导体桥电爆特性及桥温变化的研究"", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925734A (en) * | 2015-04-13 | 2015-09-23 | 中北大学 | Near field thermal-radiation charge-free MEMS ignition chip capable of efficiently transmitting heat and a preparation method thereof |
| CN104925734B (en) * | 2015-04-13 | 2016-08-03 | 中北大学 | A kind of near field heat radiation efficient heat transfer is without powder charge MEMS ignition chip and preparation method thereof |
| CN114199081A (en) * | 2020-09-17 | 2022-03-18 | 大毅科技股份有限公司 | Firing resistor and method for manufacturing the same |
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Application publication date: 20140115 |