CN103515413A - Organic light emitting diode display device and method of fabricating the same - Google Patents
Organic light emitting diode display device and method of fabricating the same Download PDFInfo
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- CN103515413A CN103515413A CN201310244296.7A CN201310244296A CN103515413A CN 103515413 A CN103515413 A CN 103515413A CN 201310244296 A CN201310244296 A CN 201310244296A CN 103515413 A CN103515413 A CN 103515413A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011368 organic material Substances 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 229910001887 tin oxide Inorganic materials 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 229910000861 Mg alloy Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an organic light emitting diode display device and a method of fabricating the same. The invention discloses a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern. The method comprises the following steps of forming a thin film transistor in a display region of a substrate, the substrate having a display region and a non-display region; forming a metal pattern on the substrate; forming a first electrode on the substrate to be connected to the thin film transistor; forming a photoresist pattern to cover the metal pattern; forming a hole common layer, an organic light emitting layer and an electron common layer sequentially over the entire surface of the substrate provided with the first electrode and the photoresist pattern; removing the photoresist pattern and forming a second electrode on the electron common layer to be connected to the metal pattern.
Description
Technical field
The present invention relates to a kind of method of manufacturing organic light-emitting diode (OLED) display apparatus, and more specifically, relate to a kind of method of manufacture organic light-emitting diode (OLED) display apparatus that can simplified manufacturing technique.In addition, the present invention relates to diode display apparatus.
Background technology
For the information as advanced with communicate by letter in core technology, the image display of much information on imbody screen, in development, have aspect slim, the lightweight and portable set that improves performance constantly progressive.Therefore, as the flat panel display equipment with the weight and volume (weight and volume is the shortcoming of cathode ray tube (CRT)) of minimizing, the organic light-emitting diode (OLED) display apparatus that shows image by adjusting the amount of the light sending from organic luminous layer, receives publicity recently.
Organic light-emitting diode (OLED) display apparatus is applied to electric field on anode and the negative electrode at the two ends that are formed on organic luminous layer, thereby electronics and hole are injected and be delivered to organic luminous layer, utilize thus electro optical phenomenon, in this electro optical phenomenon, by the compound luminous energy that discharges in electronics and hole.Electronics and hole paired with each other in organic luminous layer are luminous when dropping to ground state from excitation state.
Organic light-emitting diode (OLED) display apparatus has slim design and with for example, than Plasmia indicating panel (PDP) or the lower driving voltage of inorganic EL (EL) display (, approximately 10V or still less) operation, consumes thus power still less.Organic light-emitting diode (OLED) display apparatus is because it receives much concern at the excellent properties aspect weight and color.
Hereinafter, conventional organic light-emitting diode (OLED) display apparatus is described with reference to the accompanying drawings.
Fig. 1 is the sectional view of the organic light-emitting diode (OLED) display apparatus of illustration routine.
With reference to Fig. 1, conventional organic light-emitting diode (OLED) display apparatus comprises: be limited with the substrate 10 of viewing area and non-display area, and be formed on a plurality of organic light-emitting units in substrate 10 viewing area.Each in machine luminescence unit comprises anode 20, hole common layer 30a, organic luminous layer 40, electronics common layer 30b and the negative electrode 60 that is connected to the transistor (not shown) being formed on substrate 10.
When organic light-emitting units is when being formed on welding disking area (not shown) in the non-display area of substrate 10 voltage is applied to anode 20 and negative electrode 60, from anode 20 hole with from the electronics of negative electrode 60, be injected into organic luminous layer 40.Luminous exciton when then, being injected into organic luminous layer 40Zhong hole and electron recombination and dropping to ground state to be created in from excitation state.
Meanwhile, along with the increase of organic light-emitting diode (OLED) display apparatus display area, the resistance of negative electrode 60 increases.Especially, because the light sending from organic luminous layer is by the top emission structure organic light-emitting diode (OLED) display apparatus of substrate 100 transmissions, negative electrode 60 is formed by transparent metal, so the resistance of negative electrode 60 further increases.Therefore, in conventional organic light-emitting diode (OLED) display apparatus, can be by forming metal pattern 20a with low resistive metal and metal pattern 20 and negative electrode 60 being connected to reduce the resistance of negative electrode 60.
Yet, should form with anode 20 and be formed on metal pattern 20a, organic luminous layer 40, hole common layer 30a and the electronics common layer 30b in same layer with shadow mask, organic luminous layer 40, hole common layer 30a and electronics common layer 30b are only formed in a part for the anode 20 being exposed by dike platform (bank) 50, and this dike platform 50 forms the light-emitting zone that limits sub-pixel.Therefore, need complicated technique and expensively manufacture conventional organic light-emitting diode (OLED) display apparatus.
Summary of the invention
Therefore, the present invention is directed to a kind of method of manufacturing organic light-emitting diode (OLED) display apparatus, it has eliminated one or more problem causing due to the restriction of prior art and shortcoming substantially.
One object of the present invention be to provide a kind of can simplified manufacturing technique and reduce the method for the manufacture organic light-emitting diode (OLED) display apparatus of manufacturing cost.
Extra advantage of the present invention, object and a feature part will be set forth in following specification, and a part will become apparent for those of ordinary skills after studying following content carefully, or can know from the practice of the present invention.Object of the present invention and other advantage can be realized and be obtained by the structure of specifically noting in this printed instructions and claims and accompanying drawing.
Feature by independent claims realizes described object.
Main thought of the present invention is to provide a kind of permission in very simple mode, to expose metal pattern during manufacture and does not need the structure of shadow mask technique.This is the structure of a kind of dike platform based on concrete formation the photoresist pattern based on correspondingly forming, and this photoresist pattern is positioned at metal pattern top.This allows easily to remove by stripping technology the hierarchy that OLED is stacking that comprises of multilayer.
Especially, the method that described object is manufactured by the following organic light-emitting diode (OLED) display apparatus solves, and the method comprises the following steps: in the viewing area of substrate, form thin-film transistor, described substrate has viewing area and non-display area; On described substrate, in described viewing area, form metal pattern; On described substrate, form the first electrode that is connected to described thin-film transistor; On described substrate, form dike platform, to expose a part for described the first electrode and a part for described metal pattern; Be formed for covering the photoresist pattern of described metal pattern; In the whole surface that is provided with the described substrate of described the first electrode and described photoresist pattern, form successively hole common layer, organic luminous layer and electronics common layer; Remove described photoresist pattern; And the second electrode that is formed for being connected to described metal pattern in described electronics common layer.
The method that described object is also manufactured by the following organic light-emitting diode (OLED) display apparatus solves, and said method comprising the steps of: in the viewing area of substrate that is limited with viewing area and non-display area, form thin-film transistor; On described substrate, form metal pattern; On described substrate, form the first electrode that is connected to described thin-film transistor; Be formed for covering the photoresist pattern of described metal pattern; In the whole surface that is provided with the described substrate of described the first electrode and described photoresist pattern, form successively hole common layer, organic luminous layer and electronics common layer; Remove described photoresist pattern; And in described electronics common layer, form the second electrode be connected to described metal pattern.
The method that described object is also manufactured by the following organic light-emitting diode (OLED) display apparatus solves, and said method comprising the steps of: in the viewing area of substrate, form thin-film transistor, described substrate has viewing area and non-display area; On described substrate, in described viewing area, form metal pattern; On described substrate, form the first electrode that is connected to described thin-film transistor; On described substrate, form dike platform, to expose a part for described the first electrode and a part for described metal pattern; In the whole surface that is provided with the described substrate of described the first electrode, described dike platform and described metal pattern, form successively hole common layer, organic luminous layer and electronics common layer.
Form the photoresist pattern that covers described electronics common layer, and use described photoresist pattern to remove described hole common layer, described organic luminous layer and described electronics common layer as mask; Remove described photoresist pattern; And in described electronics common layer, form the second electrode be connected to described metal pattern.
In another aspect of the present invention, a kind of method of manufacturing organic light-emitting diode (OLED) display apparatus comprises the following steps: in the viewing area of substrate that is limited with viewing area and non-display area, form thin-film transistor; On described substrate, form metal pattern; On described substrate, form the first electrode that is connected to described thin-film transistor; In the whole surface that is provided with the described substrate of described the first electrode and described metal pattern, form successively hole common layer, organic luminous layer and electronics common layer; Form photoresist pattern to expose accordingly described electronics common layer with described metal pattern, and use described photoresist pattern to remove described hole common layer and described electronics common layer as mask; Remove described photoresist pattern; And in described electronics common layer, be formed for being connected to the second electrode of described metal pattern.
Formation, according to hole of the present invention common layer and electronics common layer, does not need shadow mask.
The step that forms photoresist pattern can comprise: in the whole surface that is provided with the described substrate of described the first electrode and described metal pattern, apply photoresist; And by described photoresist is exposed and developed, form the photoresist pattern with inverted trapezoidal shape.
The step that forms organic luminous layer can be undertaken by send the luminous organic material of white light in the whole surface formation of described substrate.
Can remove the described hole common layer being formed on described photoresist pattern, described organic luminous layer and described electronics common layer, to expose described metal pattern during removing described photoresist pattern simultaneously.
Alternatively, the luminous organic material that the step that forms organic luminous layer can be sent respectively by forming on each sub-pixel ruddiness, green glow and blue light carries out.
Then, due to organic luminous layer not being set in the part at described photoresist pattern, therefore can remove described hole common layer and the electronics common layer being formed on described photoresist pattern, to expose described metal pattern during removing described photoresist pattern simultaneously.
Can in described viewing area, form described metal pattern.
Described metal pattern can be alternatively or is formed in extraly the contact area in described non-display area, and this contact area is delivered to described the second electrode by external signal.
Described method can also comprise the following steps: before removing described photoresist pattern, in the whole surface that is provided with the described substrate of described organic luminous layer, form auxiliary electrode.
Described photoresist pattern and developer can be formed by fluorine material.
Described metal pattern and described the first electrode can be manufactured from the same material simultaneously.
Described object solves by following organic light-emitting diode (OLED) display apparatus, and described organic light-emitting diode (OLED) display apparatus comprises: array base palte, and it has viewing area and non-display area; A plurality of organic light-emitting units, it is formed in the described viewing area of described substrate, each in wherein said organic light-emitting units comprises: at least one thin-film transistor, metal pattern, its on described substrate in described viewing area; The first electrode, it is connected to described thin-film transistor on described substrate; Dike platform, it is partly overlapping with a part for described the first electrode and a part for described metal pattern on described substrate; Hole common layer, organic luminous layer and electronics common layer, it is formed on described the first electrode, described dike platform top successively.
The second electrode partly covers described dike platform and covers described electronics common layer completely, and described the second electrode is connected to described metal pattern.
Preferably, described organic light-emitting diode (OLED) display apparatus can also comprise the filter substrate that comprises colour filter, and described filter substrate is towards described array base palte.
Preferably, described metal pattern is opened with described the first electrode gap on described substrate.May there is distance between the two in the described metal pattern in other words, forming and described the first electrode in same layer on described substrate.
Preferably, described dike platform can have trapezoidal shape or the trapezoidal shape of at least one side, and the inclined side of wherein said dike platform can be towards the direction of described metal pattern.
Preferably, described metal pattern can have at least one in following form: lay respectively at the island between a plurality of organic light-emitting units; Horizontal stripe; Vertical stripes; Cross figure around described organic light-emitting units.
It being understood that aforementioned generality of the present invention is described and following detailed description is all exemplary and explanatory, and aim to provide the further explanation to the present invention for required protection.
Accompanying drawing explanation
Accompanying drawing is included to provide a further understanding of the present invention, and is merged in the application and forms the application's a part, and accompanying drawing is exemplified with (a plurality of) of the present invention execution mode, and is used from and explains principle of the present invention with specification one.In the accompanying drawings:
Fig. 1 is the sectional view of the organic light-emitting diode (OLED) display apparatus of illustration routine;
Fig. 2 A to Fig. 2 G is for describing the sectional view of method of the manufacture organic light-emitting diode (OLED) display apparatus of first embodiment of the invention;
Fig. 3 is the sectional view of the organic light-emitting diode (OLED) display apparatus that includes auxiliary electrode of illustration first embodiment of the invention;
Fig. 4 A to Fig. 4 D is for describing first embodiment of the invention, the contact area being formed on substrate is connected to external signal is delivered to the sectional view of the method for the second electrode with the second electrode;
Fig. 5 A to Fig. 5 F is for describing second embodiment of the invention, manufacture the sectional view of the method for organic light-emitting diode (OLED) display apparatus; And
Fig. 6 A to Fig. 6 E is the plane graph that illustration is formed on the shape of the metal pattern on substrate.
Embodiment
Now will be in detail with reference to the preferred embodiment of the present invention, in the accompanying drawings exemplified with the example of these preferred implementations.Possible in the situation that, the Reference numeral with identical run through to accompanying drawing and refer to same or analogous parts.
Hereinafter, describe in detail with reference to the accompanying drawings according to organic light-emitting diode (OLED) display apparatus of the present invention.
The * the first execution mode *
Fig. 2 A to Fig. 2 G is for describing the sectional view of method of the manufacture organic light-emitting diode (OLED) display apparatus of first embodiment of the invention.Fig. 3 is the sectional view of the organic light-emitting diode (OLED) display apparatus that includes auxiliary electrode of illustration first embodiment of the invention.
With reference to Fig. 2 A, substrate 200 has viewing area and non-display area, and viewing area has a plurality of sub-pixels.Thin-film transistor (not shown) is formed on substrate 200 with corresponding with sub-pixel respectively.Substrate 200 can be formed by the various materials such as glass, plastics and silicones.
Each in thin-film transistor includes: grid, gate insulation layer, semiconductor layer, source electrode and drain electrode.Use organic or inorganic insulating material to form passivation layer being provided with on the substrate 200 of thin-film transistor.Optionally remove passivation layer to expose drain electrode.Then, by the deposition process such as sputter, form the first electrode 210 on passivation layer, this first electrode 210 forms anode and is electrically connected to drain electrode.
Especially, after a while the light sending from organic luminous layer of describing is upwards being advanced to the top emission structure organic light-emitting diode (OLED) display apparatus of substrate 200, the first electrode 210 can have double-decker, and this double-decker forms by stacking gradually such as the transparent conductive material of tin oxide (TO), indium tin oxide (ITO), indium-zinc oxide (IZO) and indium tin zinc oxide (ITZO) with such as the metal material with high reflectance of aluminium (Al) or aluminium alloy (ALND).
In this, Al or the AlNd light that upwards reflection is sent from organic light-emitting units.The first electrode 210 can also have three-decker by further stacked transparent conductive material on Al or AlNd.
Then, in the layer identical with the first electrode 210, form metal pattern 210a.Here, metal pattern 210a can form with the first electrode 210 simultaneously, or forms before or after forming the first electrode 210.
First, when the first electrode 210 and metal pattern 210a form simultaneously, metal pattern 210a also has as bilayer or three-decker in the first electrode 210.While forming before or after metal pattern 210a is forming the first electrode 210, to the low resistive metal composition such as aluminium (Al), molybdenum (Mo) and copper (Cu) with formation metal pattern 210a.
Then, as shown in Figure 2 B, on substrate 200, form dike platform 220.Dike platform 220 is formed in viewing area, to limit the light-emitting zone of each sub-pixel.Conventionally, dike platform 220 forms a part of only exposing the first electrode 210.Yet according to the present invention, dike platform 220 forms a part of not only exposing the first electrode 210, but also expose a part of metal pattern 210a, to be electrically connected between metal pattern 210a and the second electrode, retouch after a while and will state.
Then, photoresist is applied on the whole surface of substrate 200, is exposed, and is developed to form the photoresist pattern 300 of the metal pattern 210a that covering exposes.In this, photoresist pattern 300 can have the upper end that width is greater than lower end, and hole common layer and electronics common layer (retouch after a while and will state) are not formed on photoresist pattern 300 side.Especially, photoresist pattern 300 forms with inverted trapezoidal shape, at the upper surface of metal pattern 210a in inverted trapezoidal shape and the angle (θ) between photoresist pattern 300 side, is less than 90 °.
Especially, photoresist pattern 300 can have the thickness larger than dike platform 220, to remove photoresist pattern 300 when exposing metal pattern 210a, contribute to penetrating of stripper (stripper) between photoresist pattern 300 and dike platform 220.
Then, as shown in Figure 2 C, above substrate 200, form the hole common layer 230a that includes hole transmission layer (HTL) and hole injection layer (HIL).
As mentioned above, because metal pattern in conventional organic light-emitting diode (OLED) display apparatus is exposed on outside, therefore use shadow mask to form hole common layer, to prevent forming this hole common layer on metal pattern.Therefore, its manufacturing process is complicated and therefore manufacturing cost increases.
Yet, according to the present invention, with inverted trapezoidal shape, form photoresist pattern 300 with covering metal pattern 210a.Therefore, can above substrate 200, form hole common layer 230a and without using mask.As a result, the stage portion office between dike platform 220 and photoresist pattern 300 forms hole common layer 230a discontinuously.
Then, common layer 230a in ， hole above forms organic luminous layer 240 as shown in Figure 2 D.Organic luminous layer 240 can be formed on the whole surface of substrate 200 and not need to use as the mask in the common layer 230a of hole, or can form in not forming Di Tai220 region overlapping with the first electrode 210.Herein exemplified with the previous case.
Especially, while forming organic luminous layer 240 on the whole surface at substrate 200, the organic luminous layer 240 that includes white light emitting material sends white light.In this case, although do not illustrate herein, each in sub-pixel comprises respectively redness (R), green (g) and blue (B) colour filter.Therefore the white light, sending from organic luminous layer 240 can be realized respectively ruddiness, green glow and blue light when respectively through R, G and B colour filter.
When organic luminous layer 240 forms in not forming Di Tai220 region with the first electrode 210 when overlapping, this organic luminous layer 240 comprises R, G and B luminous organic material.Therefore, organic luminous layer 240 sends ruddiness, green glow and blue light in the situation that not using R, G and B colour filter.In this case, the shadow mask that organic luminous layer 240 can have an opening that corresponds respectively to sub-pixel by use deposits R, G and B luminous organic material forms.Organic luminous layer 240 can also be in the situation that not used mask, by printing R, G via ink jet printing and B luminous organic material forms.
Then, as shown in Figure 2 E, in the whole surface that is provided with the substrate 200 of organic luminous layer 240, form the electronics common layer 230b that includes electron injecting layer (EIL) and electron transfer layer (ETL).
In this, because photoresist pattern 300 has the thickness larger than dike platform 220, therefore ，Yu hole common layer 230a is similar, and organic luminous layer 240 and electronics common layer 230b are also formed on the stage portion office between dike platform 220 and photoresist pattern 300 discontinuously.Especially, because photoresist pattern 300 forms with inverted trapezoidal shape, therefore on photoresist pattern 300 side, do not form hole common layer 230a, organic luminous layer 240 and electronics common layer 230b.
Then, as shown in Figure 2 F, use stripper to remove photoresist pattern 300 to expose metal pattern 210a.In this, in order not cause the infringement to organic luminous layer 240, stripper is formed by fluorine material, and photoresist and developer also can be formed by fluorine material.
Finally, as shown in Figure 2 G, in the whole surface that is provided with the substrate 200 of the metal pattern 210a exposing, form the second electrode 260, this second electrode 260 forms negative electrode.The second electrode 260 is formed by transparent metal, makes the light sending from organic luminous layer 240 pass the second electrode 260 to be launched into outside.Especially, the second electrode 260 can be formed by the magnesium alloy (Mg:Ag) with low work function.The second electrode 260 can have very little thickness, for example, and 50nm or less, thereby the light that transmission is sent from organic luminous layer 240.
; due in organic light-emitting diode (OLED) display apparatus according to the present invention; photoresist pattern 300 forms covering metal pattern 210a, therefore in the situation that not using shadow mask at the whole surface of substrate 200 formation hole common layer 230a and electronics common layer 230b.Then, remove photoresist pattern 300 to expose metal pattern 210a, and the second electrode 260 forms and is connected to this metal pattern 210a.Therefore, when forming large-area organic light-emitting diode (OLED) display apparatus, can reduce the resistance of the second electrode 260, can simplified manufacturing technique, and therefore can reduce manufacturing cost.
Especially, as shown in Figure 3, the infringement to organic luminous layer 240 being caused by stripper while removing photoresist pattern 300 in order to be minimized in can also be arranged auxiliary electrode 260a between organic luminous layer 240 and the second electrode 260.In this, before removing photoresist pattern 300, form auxiliary electrode 260a.
In this case, auxiliary electrode 260a can be formed by magnesium alloy, and the second electrode 260 can be formed by the transparent conductive material such as tin oxide (TO), indium tin oxide (ITO), indium-zinc oxide (IZO) and indium tin zinc oxide (ITZO).
Meanwhile, also the method for manufacture organic light-emitting diode (OLED) display apparatus according to the present invention can be applied to be formed on the contact area in the non-display area of substrate, external signal is passed to the second electrode.
Fig. 4 A to Fig. 4 D is for describing first embodiment of the invention, the contact area being formed on substrate is connected to external signal is delivered to the sectional view of the method for the second electrode with the second electrode.
First, with reference to Fig. 4 A, substrate 400 has viewing area and non-display area, and in viewing area, forms thin-film transistor (not shown).Then in ， viewing area, form and be connected to the first electrode 410 of thin-film transistor (not shown), and in non-display area, form contact area 410a.As mentioned above, be formed on welding disking area (not shown) in non-display area and after a while by the second electrode of describing, 410a is electrically connected to each other via contact area, external signal is passed to the second electrode by this contact area 410a.Contact area 410a can be formed on the whole surface or a part of non-display area.
Then, on substrate 400, form dike platform 420.Dike platform 420 be formed in viewing area and a part of exposing the first electrode 410 to limit the light-emitting zone of each sub-pixel.Then, in non-luminous region, with inverted trapezoidal shape, form photoresist pattern 500, to cover contact area 410a.In this, photoresist pattern 500 forms and covers contact area 410a.
Especially, as mentioned above, photoresist pattern 500 can have the upper end that width is greater than lower end.Especially, photoresist pattern 500 forms with inverted trapezoidal shape, and the angle (θ) in this inverted trapezoidal shape between the upper surface of contact area 410a and photoresist pattern 500 side is less than 90 °.
Then, as shown in Figure 4 B, at the whole surface of substrate 400 formation hole common layer 430a.Hole common layer 430a is formed on the stage portion office between substrate 400 and photoresist pattern 500 discontinuously.Common layer 430a in ， hole above forms organic luminous layer 240 in addition.
As shown here, can by white luminescent material, form organic luminous layer 440 in the whole surface of substrate 400, make the white light that sends from organic luminous layer 440 realize respectively ruddiness, green glow and blue light when being arranged on R, the G of each sub-pixel and B colour filter.Alternatively, organic luminous layer 440 can comprise R, G and B luminous organic material, and can form with the first electrode 410 not forming in Di Tai220 region overlapping.
Then, on organic luminous layer 440, form electronics common layer 430b.Also can form electronics common layer 430b in the whole surface of substrate 400 and without using mask.In this, hole common layer 430a, organic luminous layer 440 and electronics common layer 430b are not connected the stage portion office that is formed on photoresist pattern 500.
Then, as shown in Figure 4 C, use stripper to remove photoresist pattern 500 to expose contact area.In this, in order not cause the infringement to organic luminous layer 440, stripper is formed by fluorine material, and photoresist and developer also can be formed by fluorine material.
Finally, as shown in Figure 4 D, in the whole surface that is provided with the substrate 400 of electronics common layer 410a, form the second electrode 460, this second electrode 460 forms negative electrode.The second electrode 460 is electrically connected to contact area 410a and by contact area 410a, is electrically connected to the welding disking area of non-display area.Therefore, external signal can be applied to the second electrode 460.
; use is according to the method for manufacture organic light-emitting diode (OLED) display apparatus of the present invention; on the contact area 410a that the welding disking area being formed in the non-display area of substrate 400 is electrically connected to the second electrode 460; do not form hole common layer 430a and electronics common layer 430b, process industry can be simplified.
The * the second execution mode *
Fig. 5 A to Fig. 5 F is for describing second embodiment of the invention, manufacture the sectional view of the method for organic light-emitting diode (OLED) display apparatus.
With reference to Fig. 5 A, on substrate 600, in each sub-pixel, form thin-film transistor (not shown).Then, the insulating material that uses organic or inorganic forms passivation layer being provided with on the substrate 600 of thin-film transistor.Optionally remove passivation layer to expose drain electrode.Then, form the first electrode 610 on passivation layer, this first electrode 610 forms anode and is electrically connected to drain electrode.
Especially, the first electrode 610 can have by stacking gradually such as the transparent conductive material of tin oxide (TO), indium tin oxide (ITO), indium-zinc oxide (IZO) and indium tin zinc oxide (ITZO) and the double-decker that forms such as the metal material with high reflectance of aluminium (Al) or aluminium alloy (ALND), make the light (will describe after a while) producing in organic luminous layer, upwards advance to substrate 600.In this, Al or the AlNd light that upwards reflection is sent from organic light-emitting units.The first electrode 610 can also have three-decker by further stacked transparent conductive material on Al or AlNd.
Then, in the layer identical with the first electrode 610, form metal pattern 610a.Here, metal pattern 610a can be formed in viewing area with the first electrode 610 simultaneously, or forms before or after forming the first electrode 610.
First, when the first electrode 610 and metal pattern 610a form simultaneously, similar with the first electrode 610, metal pattern 610a also has bilayer or three-decker.While forming before or after metal pattern 610a is forming the first electrode 610, to the low resistive metal composition such as aluminium (Al), molybdenum (Mo) and copper (Cu) with formation metal pattern 610a.
Then, on substrate 600, form dike platform 620.Dike platform 620 forms and exposes a part for the first electrode 610 and a part of metal pattern 610a.
Then, as shown in Figure 5 B, at the whole surface of substrate 600 formation hole common layer 630a.Especially, when organic light-emitting diode (OLED) display apparatus comprises the sub-pixel that includes respectively R, G or B colour filter, and when organic luminous layer 640 sends white light, common layer 630a is similar with hole, this organic luminous layer 640 is also formed on the whole surface of substrate 600, and forms electronics common layer 630b in the whole surface of this organic luminous layer 640.That is, in the situation that not using mask, hole common layer 630a, organic luminous layer 640 and electronics common layer 630b are formed on the whole surface of substrate 600.
Meanwhile, although do not illustrate, can use shadow mask to form organic luminous layer 640 herein.In this case, organic luminous layer 640 forms in not forming Di Tai620 region overlapping with the first electrode 610, and comprises R, G and B luminous organic material.Therefore, organic luminous layer 640 sends ruddiness, green glow and blue light in the situation that not using colour filter.
Then, as shown in Figure 5 C, photoresist is applied to the whole surface of electronics common layer 630b, is exposed, and be developed to form photoresist pattern 700, this photoresist pattern 700 exposes the electronics common layer 630b in the region corresponding with metal pattern 610a.Then, as shown in Figure 5 D, use photoresist pattern 700 as mask, by dry etching, to remove hole common layer 630a, organic luminous layer 640 and the electronics common layer 630b exposing, to expose metal pattern 610a.
Especially, as mentioned above, when organic luminous layer 640 form use shadow mask only in not forming Di Tai620 region with the overlapping Shi， of the first electrode 610 hole common layer 630a and electronics common layer 630b be only formed on the corresponding region of metal pattern 610a on.Therefore, by dry etching, remove hole common layer 630a and electronics common layer 630b to expose metal pattern 610a.
Then, as shown in Fig. 5 E, use stripper to remove remaining photoresist pattern 700, to expose electronics common layer 630b.Especially, in order not cause the infringement to organic luminous layer 240, stripper is formed by fluorine material, and photoresist and developer also can be formed by fluorine material.
Finally, as shown in Fig. 5 F, in the whole surface that is provided with the substrate 600 of the metal pattern 610a exposing, form the second electrode 660, this second electrode 660 forms negative electrode.The second electrode 660 can be formed by transparent metal, makes the light sending from organic luminous layer 640 pass the second electrode 660 to be launched into outside.Especially, the second electrode 660 can be formed by the magnesium alloy (Mg:Ag) with low work function, and thickness is 50nm or less, to allow optical transmission.
; as mentioned above; according to the method for the manufacture organic light-emitting diode (OLED) display apparatus based on the second execution mode of the present invention, can also be at the whole surface of substrate 600 formation hole common layer 630a and electronics common layer 630b in the situation that not using shadow mask.By the photoresist of removing in the region corresponding with metal pattern 610a, remove hole common layer 630a and electronics common layer 630b, also can expose for reducing the metal pattern 610a of the resistance of the second electrode 660.Therefore, can simplified manufacturing technique, and can reduce manufacturing cost.
Especially, although do not illustrate herein, the infringement to organic luminous layer 640 being caused by stripper while removing photoresist pattern 700 in order to be minimized in can also be arranged auxiliary electrode (not shown) on electronics common layer 630b.In this, auxiliary electrode (not shown) can be formed by magnesium alloy, and the second electrode 660 can be formed by the transparent conductive material such as tin oxide (TO), indium tin oxide (ITO), indium-zinc oxide (IZO) and indium tin zinc oxide (ITZO).
Fig. 6 A to Fig. 6 E is the plane graph that illustration is formed on the shape of the metal pattern on substrate.
With reference to Fig. 6 A and Fig. 6 B, metal pattern 210a can form respectively island between R, G and B organic light-emitting units, with corresponding with R, G and B organic light-emitting units.Alternatively, each metal pattern 210a can form corresponding with a plurality of organic light-emitting units, as shown in Figure 6 C and 6 D shown in FIG..In addition, metal pattern 210a can form the edge around organic light-emitting units, as shown in Fig. 6 E.
Simultaneously, although not shown herein, the method for manufacture organic light-emitting diode (OLED) display apparatus second embodiment of the invention also can be applied to be formed in the non-display area of substrate and external signal is sent to the contact area of the second electrode.
As mentioned above, the method according to manufacturing organic light-emitting diode (OLED) display apparatus forms photoresist pattern on metal pattern.Therefore, although in the situation that not using mask in whole surface formation hole common layer and the electronics common layer of substrate, also can on metal pattern, not form hole common layer and electronics common layer.In addition, owing to only forming photoresist pattern in the region that does not form metal pattern, therefore, hole common layer and the electronics common layer that can expose by removal are exposed metal pattern, and this metal pattern is connected to the second electrode.Therefore, by the situation that not using mask in whole surface formation hole common layer and the electronics common layer of substrate, can simplified manufacturing technique, and can reduce manufacturing cost.
Therefore in addition, because photoresist pattern, developer and stripper are formed by fluorine material, during can and removing in the development of photoresist, prevent the infringement to organic luminous layer.In addition, the auxiliary electrode being formed between organic luminous layer and the second electrode can prevent organic luminous layer to be exposed to stripper, has improved thus reliability.
In addition, the first and second execution modes as above also can be applied to contact area to be connected with the second electrode, the external signal that is formed on the welding disking area in non-display area is passed to the technique of the second electrode.
According to above description, be apparent that to there is following effect according to the method for manufacture organic light-emitting diode (OLED) display apparatus of the present invention.
First, be electrically connected to the low resistive metal pattern of the second electrode that forms negative electrode by use, in large-area organic light-emitting diode (OLED) display apparatus, the resistance of the second electrode can not increase.
Second, owing to having formed photoresist pattern on metal pattern, even if therefore do not use mask in whole surface formation hole common layer and the electronics common layer of substrate, on metal pattern, do not form hole common layer and electronics common layer, thus simplified manufacturing technique and therefore reduced manufacturing cost yet.
The 3rd, because photoresist pattern, developer and stripper are formed by fluorine material, therefore can when developing and remove photoresist, prevent the infringement to organic luminous layer.In addition, between organic luminous layer and the second electrode, form auxiliary electrode, to prevent that organic luminous layer is exposed to stripper, improved thus the reliability of organic light-emitting diode (OLED) display apparatus.
To be apparent that to those skilled in the art, in the situation that not departing from the spirit or scope of the present invention, can carry out in the present invention various modifications and variations.Therefore, the present invention be intended to contain in the scope that falls into claims and equivalent thereof to modification of the present invention and modification.
The application requires in the priority of the korean patent application No.10-2012-0066267 of submission on June 20th, 2012.
Claims (15)
1. a method of manufacturing organic light-emitting diode (OLED) display apparatus, said method comprising the steps of:
In the viewing area of substrate, form thin-film transistor, described substrate has viewing area and non-display area;
On described substrate, in described viewing area, form metal pattern;
On described substrate, form the first electrode that is connected to described thin-film transistor;
On described substrate, form dike platform, to expose a part for described the first electrode and a part for described metal pattern;
Be formed for covering the photoresist pattern of described metal pattern;
In the whole surface that is provided with the described substrate of described the first electrode and described photoresist pattern, form successively hole common layer, organic luminous layer and electronics common layer;
Remove described photoresist pattern; And
In described electronics common layer, be formed for being connected to the second electrode of described metal pattern.
2. method according to claim 1, wherein, the step that forms photoresist pattern comprises:
Whole surface at described substrate applies photoresist;
By described photoresist is exposed and developed, form the photoresist pattern with inverted trapezoidal shape.
3. method according to claim 1 and 2, wherein, the step that forms organic luminous layer forms by the whole surface at described substrate the luminous organic material that sends white light, or the luminous organic material that sends respectively ruddiness, green glow and blue light on each sub-pixel by forming carries out.
4. method according to claim 1 and 2, wherein, remove and be formed on the described hole common layer on described photoresist pattern, described organic luminous layer and described electronics common layer simultaneously, to expose described metal pattern during removing described photoresist pattern.
5. method according to claim 1 and 2, described method is further comprising the steps of: before removing described photoresist pattern, in the whole surface that is provided with the described substrate of described electronics common layer, form auxiliary electrode.
6. a method of manufacturing organic light-emitting diode (OLED) display apparatus, said method comprising the steps of:
In the viewing area of substrate, form thin-film transistor, described substrate has viewing area and non-display area;
On described substrate, in described viewing area, form metal pattern;
On described substrate, form the first electrode that is connected to described thin-film transistor;
On described substrate, form dike platform, to expose a part for described the first electrode and a part for described metal pattern;
In the whole surface that is provided with the described substrate of described the first electrode, described dike platform and described metal pattern, form successively hole common layer, organic luminous layer and electronics common layer;
Form the photoresist pattern that covers described electronics common layer, and use described photoresist pattern to remove described hole common layer, described organic luminous layer and described electronics common layer as mask;
Remove described photoresist pattern; And
In described electronics common layer, form the second electrode that is connected to described metal pattern.
7. method according to claim 6, wherein, the step that forms described organic luminous layer is to form by the whole surface at described substrate the luminous organic material that sends white light, or the luminous organic material that sends respectively ruddiness, green glow and blue light on each sub-pixel by forming carries out.
8. according to the method described in claim 6 or 7, wherein, during removing described hole common layer and described electronics common layer, remove the described organic luminous layer overlapping with described metal pattern simultaneously.
9. according to the method described in claim 6 or 7, wherein, described photoresist and developer are formed by fluorine material.
10. according to the method described in claim 6 or 7, wherein, described metal pattern and described the first electrode are manufactured from the same material simultaneously.
11. 1 kinds of organic light-emitting diode (OLED) display apparatus, described organic light-emitting diode (OLED) display apparatus comprises:
Array base palte, it has viewing area and non-display area;
A plurality of organic light-emitting units, it is formed in the viewing area of described substrate, and wherein, each in described organic light-emitting units comprises:
At least one thin-film transistor,
Metal pattern, its on described substrate in described viewing area;
The first electrode, it is connected to described thin-film transistor on described substrate;
Dike platform, it is partly overlapping with a part for described the first electrode and a part for described metal pattern on described substrate;
Hole common layer, organic luminous layer and electronics common layer, it is formed on described the first electrode, described dike platform top successively;
The second electrode, it partly covers described dike platform and covers described electronics common layer completely, and described the second electrode is connected to described metal pattern.
12. organic light-emitting diode (OLED) display apparatus according to claim 11, described organic light-emitting diode (OLED) display apparatus also comprises:
Include the filter substrate of colour filter, described filter substrate is towards described array base palte.
13. according to the organic light-emitting diode (OLED) display apparatus described in claim 11 or 12, and wherein, described metal pattern is opened with described the first electrode gap on described substrate.
14. according to the organic light-emitting diode (OLED) display apparatus described in claim 11 or 12, and wherein, described dike platform has trapezoidal shape.
15. according to the organic light-emitting diode (OLED) display apparatus described in claim 11 or 12, and wherein, described metal pattern has at least one in following form:
Lay respectively at the island between a plurality of organic light-emitting units;
Horizontal stripe;
Vertical stripes;
Cross figure around described organic light-emitting units.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| KR10-2012-0066267 | 2012-06-20 | ||
| KR1020120066267A KR101920766B1 (en) | 2011-08-09 | 2012-06-20 | Method of fabricating the organic light emitting device |
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| CN103515413B CN103515413B (en) | 2016-02-10 |
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| CN103515413B (en) | 2016-02-10 |
| DE102013105972B4 (en) | 2016-11-03 |
| DE102013105972A1 (en) | 2013-12-24 |
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