CN103457154A - Integrated optical communication laser driver with pre-emphasis - Google Patents
Integrated optical communication laser driver with pre-emphasis Download PDFInfo
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- CN103457154A CN103457154A CN2013103830743A CN201310383074A CN103457154A CN 103457154 A CN103457154 A CN 103457154A CN 2013103830743 A CN2013103830743 A CN 2013103830743A CN 201310383074 A CN201310383074 A CN 201310383074A CN 103457154 A CN103457154 A CN 103457154A
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Abstract
The invention discloses an integrated optical communication laser driver with pre-emphasis and relates to integrated circuit design of the communication field. The laser driver comprises a modulation data signal input end, a first delay driving unit, a modulation current driving unit, a second delay driving unit, a pre-emphasis driving unit and a laser assembly. The input end of the first delay driving unit and the input end of the second delay driving unit are both connected with the modulation data signal input end. The output end of the first delay driving unit is connected with a modulation driving signal input port of the modulation current driving unit. The output end of the second delay driving unit is connected with a pre-emphasis driving signal input port of the pre-emphasis driving unit. The modulation current driving unit is connected with the pre-emphasis driving unit. The modulation current driving unit and the pre-emphasis driving unit are respectively connected with the laser assembly. According to the integrated optical communication laser driver with pre-emphasis, current pre-emphasis output of the laser driver can be achieved, the output modulation current is adjustable and the depth of pre-emphasis can be controlled.
Description
Technical field
The present invention relates to the integrated circuit (IC) design of the communications field, particularly relate to a kind of laser driver of the integrated optical communication with preemphasis.
Background technology
Laser driver is the Primary Component in optical communications module, is used to luminescent device that drive current is provided.Generally, the output waveform that laser driver drives for modulated current synchronously reflects the situation of change of input modulating signal.Yet, in high speed signal modulation, due to the impact of the parasitic capacitance of the cabling time delay of modulated current output signal and luminescent device itself, may cause exporting the deteriorated of light eye pattern, in the transmitting procedure of signal, due to the decay of high frequency, can cause the loss of signal integrity.In order to address this problem, usually can before signal sends, to signal, do preemphasis and process, promote in advance the high fdrequency component of signal, the decay with compensating signal at transmitting procedure medium-high frequency component.Therefore, need the laser driver of designing with the preemphasis function badly.
Summary of the invention
The objective of the invention is in order to overcome the deficiency of above-mentioned background technology, a kind of laser driver of the integrated optical communication with preemphasis is provided, the electric current preemphasis that not only can realize laser driver is exported, the size of output modulated current is adjustable, and can also control the degree of depth of preemphasis.
The invention provides a kind of laser driver of the integrated optical communication with preemphasis, it comprises power vd D, modulated data signal input Dat, the first delay and running unit, modulated current driver element and laser assembly, the modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, the input of the first delay and running unit is connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, the modulated current driver element is connected with laser assembly, it also comprises the second delay and running unit and preemphasis driver element, the preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, the input of the second delay and running unit is connected with modulated data signal input Dat, the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, the modulated current driver element is connected with the preemphasis driver element, the preemphasis driver element is connected with laser assembly, wherein:
Described the first delay and running unit is composed in series by several inverters, for time delay, amplification and the driving that realizes modulation signal, improves the driving force of modulation signal;
Described the second delay and running unit also is composed in series by several inverters, for modulation signal is carried out to time delay, amplification and driving, then converts preemphasized signal to;
Described modulated current driver element, for: convert the modulated current signal after time delay and amplification to modulated current, modulated current is exported to laser assembly, and control the intensity of output modulated current by modulated current control port Imodctrl;
Described preemphasis driver element, for: convert preemphasized signal the output of to preemphasis electric current, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thereby control the degree of depth of preemphasis;
Described modulated current driver element comprises the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 also is connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The drain electrode of the source electrode of the 3rd nmos pass transistor M3 the 4th nmos pass transistor M4, the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4;
Described preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 also is connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the grid of the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 all meets power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the source electrode of the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of a PMOS transistor M11, and the drain electrode of a PMOS transistor M11 is connected with the source electrode of a PMOS transistor M11, the grid of the 2nd PMOS transistor M12 respectively; The source electrode of the source electrode of the one PMOS transistor M11 and the 2nd PMOS transistor M12 all meets power vd D; The drain electrode of the 2nd PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and with the preemphasis output port Ipeout of preemphasis driver element, is connected simultaneously.
On the basis of technique scheme, the mirror image pipe that in described modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 are the modulated current current mirror output, will input modulated current signal and amplify several times; The second nmos pass transistor M2 and the 4th nmos pass transistor M4 are the MOS switch, coordinate the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 output modulated current.
On the basis of technique scheme, in described modulated current driver element, the second nmos pass transistor M2 is set to often open, and the 4th nmos pass transistor M4 is controlled by the first delay and running unit, from the drain electrode output modulated current signal of the 3rd nmos pass transistor M3.
On the basis of technique scheme, in described modulated current driver element, the image ratio of the image ratio of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 and the second nmos pass transistor M2 and the 4th nmos pass transistor M4 meets following relation: M1:M3=M2:M4=1:N, and N is positive integer.
On the basis of technique scheme, in described preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, a PMOS transistor M11 and the 2nd PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, and the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are the MOS switch.
On the basis of technique scheme, described the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 are set to often open, and the tenth nmos pass transistor M10 is controlled by the second delay and running unit.
On the basis of technique scheme, described the 7th nmos pass transistor M7 and the 8th nmos pass transistor M8 are by after input current one to one mirror image, by a PMOS transistor M11 and the 2nd PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the 2nd PMOS transistor M12, and output to laser assembly after the current subtraction of the 9th nmos pass transistor M9 drain electrode.
On the basis of technique scheme, the image ratio of described the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12 meets following relation: M5:M7:M9=M6:M8:M10=1:1:M; M11:M12=1:M, M is positive integer.
On the basis of technique scheme, the number of inverter in described the second delay and running unit, parameter are identical with number, the parameter of inverter in the first delay and running unit.
On the basis of technique scheme, the number of inverter in described the second delay and running unit, parameter are different from number, the parameter of inverter in the first delay and running unit.
Compared with prior art, advantage of the present invention is as follows:
Integrated optical communication laser driver provided by the invention comprises the first delay and running unit, modulated current driver element, the second delay and running unit, preemphasis driver element and laser assembly, time delay, amplification and the driving of modulation signal realized in the first delay and running unit, the modulated current driver element is exported to laser assembly after converting the modulated current signal after time delay and amplification to modulated current, and controls the intensity of output modulated current; The second delay and running unit, by after modulation signal time delay, amplification and driving, converts preemphasized signal to, and the preemphasis driver element converts preemphasized signal the output of to preemphasis electric current, and controls the intensity of preemphasis electric current, thereby controls the degree of depth of preemphasis.Therefore, the present invention not only can realize that the electric current preemphasis of laser driver is exported, the size of output modulated current is adjustable, and can also control the degree of depth of preemphasis.
The accompanying drawing explanation
Fig. 1 is with the structured flowchart of the integrated optical communication laser driver of preemphasis in the embodiment of the present invention.
Fig. 2 is the circuit diagram of the first delay and running unit in the embodiment of the present invention.
Fig. 3 is the circuit diagram of modulated current driver element in the embodiment of the present invention.
Fig. 4 is the circuit diagram of preemphasis driver element in the embodiment of the present invention.
Fig. 5 is the oscillogram that laser driver is generally exported modulated current.
Fig. 6 deducts the output modulated current in Fig. 5 the oscillogram of a direct current.
Fig. 7 produces one by a small margin and the oscillogram of the output modulated current mirror image of single spin-echo in the embodiment of the present invention.
Fig. 8 be by after the waveform time delay of Fig. 7 with the schematic diagram of the waveform of Fig. 6 stack.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Shown in Figure 1, the embodiment of the present invention provides a kind of laser driver of the integrated optical communication with preemphasis, comprise power vd D, modulated data signal input Dat, the first delay and running unit, the modulated current driver element, the second delay and running unit, preemphasis driver element and laser assembly, the modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, the preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, the first delay and running unit, the input of the second delay and running unit all is connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, and the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, the modulated current driver element is connected with the preemphasis driver element, and modulated current driver element, preemphasis driver element all are connected with laser assembly, wherein:
Shown in Figure 2, the first delay and running unit is composed in series by several inverters, for time delay, amplification and the driving that realizes modulation signal, improves the driving force of modulation signal;
The second delay and running unit also is composed in series by several inverters, for modulation signal is carried out to time delay, amplification and driving, then converts preemphasized signal to; The number of inverter in the second delay and running unit, parameter can be identical with number, the parameter of inverter in the first delay and running unit, also can be different;
The modulated current driver element, for: convert the modulated current signal after time delay and amplification to modulated current, modulated current is exported to laser assembly, and control the intensity of output modulated current by modulated current control port Imodctrl;
The preemphasis driver element, for: convert preemphasized signal the output of to preemphasis electric current, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thereby control the degree of depth of preemphasis.
Shown in Figure 3, the modulated current driver element comprises the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 also is connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The drain electrode of the source electrode of the 3rd nmos pass transistor M3 the 4th nmos pass transistor M4, the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4.
Shown in Figure 4, the preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 also is connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the grid of the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 all meets power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the source electrode of the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of a PMOS transistor M11, and the drain electrode of a PMOS transistor M11 is connected with the source electrode of a PMOS transistor M11, the grid of the 2nd PMOS transistor M12 respectively; The source electrode of the source electrode of the one PMOS transistor M11 and the 2nd PMOS transistor M12 all meets power vd D; The drain electrode of the 2nd PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and with the preemphasis output port Ipeout of preemphasis driver element, is connected simultaneously.
The operation principle of the embodiment of the present invention is elaborated as follows:
Mirror image pipe shown in Figure 3, that in the modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 are the modulated current current mirror output, will input modulated current signal and amplify several times; The second nmos pass transistor M2 and the 4th nmos pass transistor M4 are the MOS switch, coordinate the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 output modulated current.For improving the current mirror precision of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3, the second nmos pass transistor M2 is set to often open, the 4th nmos pass transistor M4 is controlled by the first delay and running unit, from the drain electrode output modulated current signal of the 3rd nmos pass transistor M3.For realizing controlling with less control electric current the purpose of larger electric current output, the image ratio of the image ratio of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 and the second nmos pass transistor M2 and the 4th nmos pass transistor M4 meets following relation: M1:M3=M2:M4=1:N, and N is positive integer.
Shown in Figure 4, in the preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, a PMOS transistor M11 and the 2nd PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, and the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are the MOS switch.For improving the current mirror precision of the 5th nmos pass transistor M5, the 7th nmos pass transistor M7 and the 9th nmos pass transistor M9, the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 are set to often open, and the tenth nmos pass transistor M10 is controlled by the second delay and running unit.The 7th nmos pass transistor M7 and the 8th nmos pass transistor M8 are by after input current one to one mirror image, by a PMOS transistor M11 and the 2nd PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the 2nd PMOS transistor M12, and output to laser assembly after the current subtraction of the 9th nmos pass transistor M9 drain electrode.For the purpose that realizes that the preemphasis degree of depth is controlled, the image ratio of the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12 meets following relation: M5:M7:M9=M6:M8:M10=1:1:M; M11:M12=1:M, M is positive integer.
Laser driver output modulated current waveform generally is shown in Figure 5, for realizing the preemphasis function, at first needs output modulated current is generally deducted to a direct current, and concrete waveform is shown in Figure 6.Because modulated current output needs to coordinate bias current (bias current does not draw) usually, in fact for luminous laser, not there will be negative electric current, but the bias current by laser reduces to replace by reality.For realizing the preemphasis function, secondly need to produce one by a small margin and the output modulated current mirror image of single spin-echo, concrete waveform is shown in Figure 7.For realizing the preemphasis function, finally also need after the waveform time delay in Fig. 7, with the waveform stack in Fig. 6, the final waveform of realizing is shown in Figure 8.
Those skilled in the art can carry out various modifications and variations to the embodiment of the present invention, if these are revised and modification belongs within the scope of the claims in the present invention and equivalent technologies thereof, these modifications and modification are also within protection scope of the present invention.
The prior art that the content of not describing in detail in specification is known to the skilled person.
Claims (10)
1. the laser driver of the integrated optical communication with preemphasis, it comprises power vd D, modulated data signal input Dat, the first delay and running unit, modulated current driver element and laser assembly, the modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, the input of the first delay and running unit is connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, the modulated current driver element is connected with laser assembly, it is characterized in that: it also comprises the second delay and running unit and preemphasis driver element, the preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, the input of the second delay and running unit is connected with modulated data signal input Dat, the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, the modulated current driver element is connected with the preemphasis driver element, the preemphasis driver element is connected with laser assembly, wherein:
Described the first delay and running unit is composed in series by several inverters, for time delay, amplification and the driving that realizes modulation signal, improves the driving force of modulation signal;
Described the second delay and running unit also is composed in series by several inverters, for modulation signal is carried out to time delay, amplification and driving, then converts preemphasized signal to;
Described modulated current driver element, for: convert the modulated current signal after time delay and amplification to modulated current, modulated current is exported to laser assembly, and control the intensity of output modulated current by modulated current control port Imodctrl;
Described preemphasis driver element, for: convert preemphasized signal the output of to preemphasis electric current, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thereby control the degree of depth of preemphasis;
Described modulated current driver element comprises the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 also is connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The drain electrode of the source electrode of the 3rd nmos pass transistor M3 the 4th nmos pass transistor M4, the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4;
Described preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 also is connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the grid of the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 all meets power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the source electrode of the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of a PMOS transistor M11, and the drain electrode of a PMOS transistor M11 is connected with the source electrode of a PMOS transistor M11, the grid of the 2nd PMOS transistor M12 respectively; The source electrode of the source electrode of the one PMOS transistor M11 and the 2nd PMOS transistor M12 all meets power vd D; The drain electrode of the 2nd PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and with the preemphasis output port Ipeout of preemphasis driver element, is connected simultaneously.
2. the laser driver of the integrated optical communication with preemphasis as claimed in claim 1, it is characterized in that: the mirror image pipe that in described modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 are the modulated current current mirror output, will input modulated current signal and amplify several times; The second nmos pass transistor M2 and the 4th nmos pass transistor M4 are the MOS switch, coordinate the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 output modulated current.
3. the laser driver of the integrated optical communication with preemphasis as claimed in claim 2, it is characterized in that: in described modulated current driver element, the second nmos pass transistor M2 is set to often open, the 4th nmos pass transistor M4 is controlled by the first delay and running unit, from the drain electrode output modulated current signal of the 3rd nmos pass transistor M3.
4. the laser driver of the integrated optical communication with preemphasis as claimed in claim 1, it is characterized in that: in described modulated current driver element, the image ratio of the image ratio of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 and the second nmos pass transistor M2 and the 4th nmos pass transistor M4 meets following relation: M1:M3=M2:M4=1:N, and N is positive integer.
5. the laser driver of the integrated optical communication with preemphasis as claimed in claim 1, it is characterized in that: in described preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, a PMOS transistor M11 and the 2nd PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, and the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are the MOS switch.
6. the laser driver of the integrated optical communication with preemphasis as claimed in claim 1, it is characterized in that: described the 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 are set to often open, and the tenth nmos pass transistor M10 is controlled by the second delay and running unit.
7. the laser driver of the integrated optical communication with preemphasis as claimed in claim 6, it is characterized in that: described the 7th nmos pass transistor M7 and the 8th nmos pass transistor M8 are by after input current one to one mirror image, by a PMOS transistor M11 and the 2nd PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the 2nd PMOS transistor M12, and output to laser assembly after the current subtraction of the 9th nmos pass transistor M9 drain electrode.
8. the laser driver of the integrated optical communication with preemphasis as claimed in claim 1, it is characterized in that: the image ratio of described the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, a PMOS transistor M11, the 2nd PMOS transistor M12 meets following relation: M5:M7:M9=M6:M8:M10=1:1:M; M11:M12=1:M, M is positive integer.
9. the laser driver of the integrated optical communication with preemphasis as described as any one in claim 1 to 8 is characterized in that: the number of inverter in described the second delay and running unit, parameter are identical with number, the parameter of inverter in the first delay and running unit.
10. the laser driver of the integrated optical communication with preemphasis as described as any one in claim 1 to 8 is characterized in that: the number of inverter in described the second delay and running unit, parameter are different from number, the parameter of inverter in the first delay and running unit.
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| CN106785891A (en) * | 2016-11-21 | 2017-05-31 | 许继电源有限公司 | A kind of non-overshoot it is fast before and after along Multiple pulse superposition method and apparatus |
| CN110086082A (en) * | 2019-04-09 | 2019-08-02 | 华中师范大学 | A kind of VCSEL laser high-speed driving circuit of capacitive coupling preemphasis |
| CN110233420A (en) * | 2019-07-04 | 2019-09-13 | 湖北秉正讯腾科技有限公司 | Laser driving circuit and laser equipment |
| CN114094436A (en) * | 2022-01-19 | 2022-02-25 | 长芯盛（武汉）科技有限公司 | Driving device and method for processing driving current |
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| CN106785891A (en) * | 2016-11-21 | 2017-05-31 | 许继电源有限公司 | A kind of non-overshoot it is fast before and after along Multiple pulse superposition method and apparatus |
| CN110086082A (en) * | 2019-04-09 | 2019-08-02 | 华中师范大学 | A kind of VCSEL laser high-speed driving circuit of capacitive coupling preemphasis |
| CN110233420A (en) * | 2019-07-04 | 2019-09-13 | 湖北秉正讯腾科技有限公司 | Laser driving circuit and laser equipment |
| CN110233420B (en) * | 2019-07-04 | 2023-12-19 | 湖北秉正讯腾科技有限公司 | Laser driving circuit and laser device |
| CN114094436A (en) * | 2022-01-19 | 2022-02-25 | 长芯盛（武汉）科技有限公司 | Driving device and method for processing driving current |
| CN114094436B (en) * | 2022-01-19 | 2022-05-17 | 长芯盛（武汉）科技有限公司 | Driving device and method for processing driving current |
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