CN103413841A - Solar cell surface passive layer structure and preparing method thereof - Google Patents
Solar cell surface passive layer structure and preparing method thereof Download PDFInfo
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- CN103413841A CN103413841A CN2013103825938A CN201310382593A CN103413841A CN 103413841 A CN103413841 A CN 103413841A CN 2013103825938 A CN2013103825938 A CN 2013103825938A CN 201310382593 A CN201310382593 A CN 201310382593A CN 103413841 A CN103413841 A CN 103413841A
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Abstract
The invention discloses a solar cell surface passive layer structure. A laminate passive film structure composed of a silicon dioxide passive film and a silicon nitride passive film is adopted for the structure, and therefore the defects that the interface defect density of the silicon nitride passive film is high, silicon-hydrogen bonds are not stable, the capacity for resisting metal ions of the silicon dioxide passive film is poor, moisture can be easily adsorbed and the reducing and reflecting effect of light is not good are overcome. The thickness of the silicon dioxide passive film is optimized to range from 10 nanometers to 40 nanometers, therefore, the passivating effect for electrically active impurities of silicon materials and surface defects of the silicon materials is greatly improved on the basis that the light absorbing rate is ensured, the surface recombination rate of a photon-generated carrier is obviously lowered, and the conversion efficiency of crystalline silicon can be improved by 0.3%. Meanwhile, the invention further discloses a preparing method of the solar cell surface passive layer structure. According to the method, the silicon dioxide passive film is prepared through the thermal oxidation technology, the silicon nitride passive film is prepared through the PECVD technology, and the method can be compatible with the solar cell preparing technology.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of solar cell surface passivation layer structure and preparation method thereof.
Background technology
Photovoltaic generation is one of current major way that utilizes solar energy, solar energy power generating because it is clean, safety, facility, the characteristics such as efficient, the new industry that has become the countries in the world common concern and given priority to.Therefore, further investigate and utilize solar energy resources, alleviation crisis of resource, the tool of improving the ecological environment are of great significance.
In solar energy battery grade silicon material, contain a large amount of impurity and defect, the silicon materials surface exists a lot of unsaturated dangling bonds, and few son that these factors cause is compound, has limited the further raising of crystal silicon solar energy battery transformation efficiency.
Effective minority carrier life time of solar cell is by wafer bulk life-span and the common decision of surperficial useful life.When the silicon wafer thickness attenuate, the useful life on surface is much smaller than body life time, and useful life is now mainly determined by surperficial useful life, so surface recombination is very obvious on the impact of effective minority carrier life time.And the higher surface recombination of the silicon chip surface density of states is more serious, and the surface passivation rete of preparation high-quality can reduce surperficial recombination rate, improves the collection rate of surperficial photo-generated carrier.
At present in the conventional solar cell commercial process, usually adopt silicon dioxide prepared by oxidation and two kinds of passivation films of silicon nitride of chemical vapor deposition.
Wherein, silicon nitride passive film is on the crystal silicon cell surface, one deck passivating film of the method growth 70-90 nanometer thickness by plasma enhanced chemical vapor deposition, and this passivating film has the effect that reduces the sunlight reflection simultaneously.This kind passivation mode is mainly to utilize silicon nitride film layer to have very high positive charge density, and according to the principle of electric charge two like magnetic poles repel each other, move to battery surface in the few sub-hole of restriction, thereby realizes the purpose of passivation.
The silicon dioxide passivating film is to pass through the methods such as chemical liquids oxidation, thermal oxidation or plasma enhanced vapor deposition at battery surface, the thick silicon dioxide layer of growth 100-130.The method is to utilize the unsaturated dangling bonds of solar battery surface silicon atom and oxygen atom to form covalent bond, reduces the purpose that surface density of states reaches surface passivation.
The shortcoming that above-mentioned prior art exists is:
After silicon nitride passive film was deposited on silicon chip surface, interface defect density was higher, affected whole passivation effect.
The refractive index of silicon dioxide passivating film lower (1.46 left and right), to the too late silicon nitride passive film of sunlight anti-reflection effect; And because the silicon dioxide layer positive charge density is very low, its field effect passivation effect is also good not as silicon nitride passive film.
Therefore, be necessary existing solar cell surface passivation layer is improved.
Summary of the invention
The object of the present invention is to provide a kind of solar cell surface passivation layer structure and preparation method thereof, to improve the performance of solar cell surface passivation layer.
To achieve these goals, the invention provides a kind of solar cell surface passivation layer structure, comprising:
The silicon dioxide passivating film, be deposited on a crystalline silicon substrate;
Silicon nitride passive film, be deposited on described silicon dioxide passivating film;
Wherein, the thickness of described silicon dioxide passivating film is the 10-40 nanometer, and the thickness of described silicon nitride passive film is the 45-75 nanometer.
Preferably, the thickness of described silicon dioxide passivating film is the 20-30 nanometer.
Preferably, the thickness of described silicon nitride passive film is the 55-60 nanometer.
Preferably, the refractive index of described silicon dioxide passivating film is 1.4～1.46, and the refractive index of described silicon nitride passive film is 2.0～2.3.
Simultaneously, to achieve these goals, the present invention also provides a kind of preparation method of solar cell surface passivation layer structure, comprises the steps:
One crystalline silicon substrate is provided, and wherein, described crystalline silicon substrate has been carried out making herbs into wool, diffusion and etching technics successively;
Described crystalline silicon substrate is carried out to thermal oxidation technology, on described crystalline silicon substrate, generate the silicon dioxide passivating film;
Described crystalline silicon substrate is carried out to pecvd process, deposited silicon nitride passivating film on described silicon dioxide passivating film;
Wherein, the thickness of described silicon dioxide passivating film is the 10-40 nanometer, and the thickness of described silicon nitride passive film is the 45-75 nanometer.
Preferably, the process conditions of described thermal oxidation technology are:
The gas passed into is: nitrogen: 7～9slm, oxygen: 2500～3500sccm;
Temperature: 850～870 ℃;
Time: 30～40min.
Preferably, the process conditions of described thermal oxidation technology are:
The gas passed into is: nitrogen: 8slm, oxygen: 3000sccm;
Temperature: 860 ℃;
Time: 35min.
Preferably, the process conditions of described pecvd process are:
Power: 7200～7500 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time;
Temperature: 480-490 ℃;
Time: 400～500S.
Preferably, the process conditions of described pecvd process are:
Power: 7400 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time;
Temperature: 480-490 ℃;
Time: 450S.
Preferably, the method is further comprising the steps of after deposited silicon nitride passivating film on described silicon dioxide passivating film: the step of silk screen printing, metallization and sorting.
Compared with prior art, the present invention adopts the passivation layer of the stack membrane structure of silicon dioxide+silicon nitride as surface of crystalline silicon, adopt this passivation layer structure can integrate field passivation and the superior interfacial state passivation of silicon dioxide of silicon nitride positive charge, take into account simultaneously the anti-reflection effect of crystal silicon battery surface to sunlight, specifically can reach following effect:
(1) the present invention combines the advantage of silicon dioxide and two kinds of passivation films of silicon nitride, interface defect density height and the unsettled shortcoming of si-h bond of silicon nitride passive film have been overcome, solved silicon dioxide passivating film metal ion blocking capability poor, easy absorption aqueous vapor, the shortcoming such as the anti-reflection effect of light is bad;
(2) the present invention has done optimal design to silicon dioxide level silicon nitride layer thickness, on the basis that guarantees absorptivity, increase greatly the passivation effect to silicon materials electrically active impurity and blemish, make the recombination-rate surface of photo-generated carrier obviously reduce, can make the transformation efficiency of crystalline silicon improve 0.3%.
The accompanying drawing explanation
The structural representation of the solar cell surface passivation layer structure that Fig. 1 provides for one embodiment of the invention;
The preparation method's of the solar cell surface passivation layer structure that Fig. 2 provides for one embodiment of the invention flow chart.
Embodiment
Solar cell surface passivation layer structure the present invention proposed below in conjunction with the drawings and specific embodiments and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only for convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
Refer to Fig. 1, the structural representation of the solar cell surface passivation layer structure that Fig. 1 provides for one embodiment of the invention, as shown in Figure 1, solar cell surface passivation layer structure provided by the invention comprises:
Silicon dioxide passivating film 102, be deposited on a crystalline silicon substrate 101; This crystalline silicon substrate 101 has been carried out making herbs into wool, diffusion and etching technics successively, has namely carried out the preparation of the deposition passivating film in solar cell preparation technology; The thickness of silicon dioxide passivating film 102 is the 10-40 nanometer, and preferably, the thickness of silicon dioxide passivating film 102 is the 20-30 nanometer; The refractive index of silicon dioxide passivating film 102 is 1.46;
Silicon nitride passive film 103, be deposited on described silicon dioxide passivating film 102; The thickness of silicon nitride passive film 103 is the 45-75 nanometer; Preferably, the thickness of silicon nitride passive film 103 is the 55-60 nanometer; The refractive index of silicon nitride passive film 103 is 2.0～2.3.
Wherein, the silicon dioxide passivating film 102 that 20-30nm is thick can guarantee that good field effect passivation effect washes, and the defect of saturated silicon face preferably.Simultaneously, in order to guarantee the anti-reflection effect of light, the thickness of silicon nitride passive film 103 is 55-60nm.
And above-mentioned silicon dioxide passivating film 102 makes by solar cell preparation technology, increasing thermal oxidation technology, this thermal oxidation technology is increased between etching technics and pecvd process; Above-mentioned silicon nitride passive film 103 makes by pecvd process.
Solar cell surface passivation layer structure provided by the invention combines the advantage of silicon dioxide and two kinds of passivation films of silicon nitride, interface defect density height and the unsettled shortcoming of si-h bond of silicon nitride passive film have been overcome, solved silicon dioxide passivating film metal ion blocking capability poor, easy absorption aqueous vapor, the shortcoming such as the anti-reflection effect of light is bad
Please continue to refer to Fig. 2, the preparation method's of the solar cell surface passivation layer structure that Fig. 2 provides for one embodiment of the invention flow chart; The preparation method of solar cell surface passivation layer structure provided by the invention, comprise the steps:
S1, provide a crystalline silicon substrate 101, wherein, described crystalline silicon substrate 101 has been carried out making herbs into wool, diffusion and etching technics successively; Because making herbs into wool, diffusion and etching technics are common process step prepared by solar cell, therefore at this, no longer describe in detail.
S2, described crystalline silicon substrate 101 is carried out to thermal oxidation technology, on described crystalline silicon substrate 101, generate the silicon dioxide passivating film 102 of 10-40 nanometer thickness; Particularly, the process conditions of thermal oxidation technology are:
The gas passed into is: nitrogen: 7～9slm, oxygen: 2500～3500sccm;
Temperature: 850～870 ℃;
Time: 30～40min;
And in preferred embodiment of the present invention, the process conditions of thermal oxidation technology are preferably:
The gas passed into is: nitrogen: 8slm, oxygen: 3000sccm;
Temperature: 860 ℃;
Time: 35min.
S3, described crystalline silicon substrate 101 is carried out to pecvd process, the silicon nitride passive film 103 of deposition 45-75 nanometer thickness on described silicon dioxide passivating film 102; Particularly, the process conditions of pecvd process are:
Power: 7200～7500 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time; Wherein Ton particularly can 6 milliseconds, and Toff particularly can 60 milliseconds.
Temperature: 480-490 ℃;
Time: 400～500S.
And in preferred embodiment of the present invention, the process conditions of pecvd process are preferably:
Power: 7400 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time; Wherein Ton particularly can 6 milliseconds, and Toff particularly can 60 milliseconds;
Temperature: 480-490 ℃;
Time: 450S.
Through above step, can complete the preparation of solar cell surface passivation layer structure; In order to prepare solar cell, also need after above-mentioned steps, carry out successively the step of silk screen printing, metallization and sorting.Because the step of silk screen printing, metallization and sorting is all the conventional steps in solar cell preparation technology, therefore at this, no longer describe in detail.
Above-described embodiment is only to give an example for convenience of description, and the interest field that the present invention advocates should be as the criterion so that claim is described, but not only limits to described embodiment.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. a solar cell surface passivation layer structure, is characterized in that, comprising:
The silicon dioxide passivating film, be deposited on a crystalline silicon substrate;
Silicon nitride passive film, be deposited on described silicon dioxide passivating film;
Wherein, the thickness of described silicon dioxide passivating film is the 10-40 nanometer, and the thickness of described silicon nitride passive film is the 45-75 nanometer.
2. solar cell surface passivation layer structure as claimed in claim 1, is characterized in that, the thickness of described silicon dioxide passivating film is the 20-30 nanometer.
3. solar cell surface passivation layer structure as claimed in claim 1 or 2, is characterized in that, the thickness of described silicon nitride passive film is the 55-60 nanometer.
4. solar cell surface passivation layer structure as claimed in claim 3, is characterized in that, the refractive index of described silicon dioxide passivating film is 1.4-1.46, and the refractive index of described silicon nitride passive film is 2.0～2.3.
5. the preparation method of a solar cell surface passivation layer structure, is characterized in that, comprises the steps:
One crystalline silicon substrate is provided, and wherein, described crystalline silicon substrate has been carried out making herbs into wool, diffusion and etching technics successively;
Described crystalline silicon substrate is carried out to thermal oxidation technology, on described crystalline silicon substrate, generate the silicon dioxide passivating film;
Described crystalline silicon substrate is carried out to pecvd process, deposited silicon nitride passivating film on described silicon dioxide passivating film;
Wherein, the thickness of described silicon dioxide passivating film is the 10-40 nanometer, and the thickness of described silicon nitride passive film is the 45-75 nanometer.
6. the preparation method of solar cell surface passivation layer structure as claimed in claim 5, is characterized in that, the process conditions of described thermal oxidation technology are:
The gas passed into is: nitrogen: 7～9slm, oxygen: 1000～3500sccm;
Temperature: 850～870 ℃;
Time: 30～40min.
7. the preparation method of solar cell surface passivation layer structure as claimed in claim 6, is characterized in that, the process conditions of described thermal oxidation technology are:
The gas passed into is: nitrogen: 8slm, oxygen: 2000sccm;
Temperature: 860 ℃;
Time: 35min.
8. the preparation method of solar cell surface passivation layer structure as claimed in claim 5, is characterized in that, the process conditions of described pecvd process are:
Power: 7200～7500 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time;
Temperature: 480-490 ℃;
Time: 400～500S.
9. the preparation method of solar cell surface passivation layer structure as claimed in claim 8, is characterized in that, the process conditions of described pecvd process are:
Power: 7400 watts;
The gas passed into: ammonia: 6.5slm, silane: 480sccm;
Ton:Toff=6:60; Wherein, Ton is the radio-frequency power opening time, and Toff is the radio-frequency power shut-in time;
Temperature: 480-490 ℃;
Time: 450S.
10. the preparation method of solar cell surface passivation layer structure as claimed in claim 5, it is characterized in that, the method is further comprising the steps of after deposited silicon nitride passivating film on described silicon dioxide passivating film: the step of silk screen printing, metallization and sorting.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104362185A (en) * | 2014-10-09 | 2015-02-18 | 西安黄河光伏科技股份有限公司 | Passivating film preparation method of crystalline silicon solar cell |
| CN104576833A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery |
| CN105185851A (en) * | 2015-09-06 | 2015-12-23 | 浙江晶科能源有限公司 | Back passivation solar cell and preparation method thereof |
| CN105590982A (en) * | 2016-02-19 | 2016-05-18 | 安徽旭能光伏电力有限公司 | High-efficiency solar cell piece and thermal treatment technology |
| CN107768482A (en) * | 2017-09-25 | 2018-03-06 | 江西展宇新能源股份有限公司 | A kind of hot oxygen technique of crystal silicon solar energy battery |
| CN107863415A (en) * | 2017-10-10 | 2018-03-30 | 横店集团东磁股份有限公司 | A kind of method of thermal oxide combination PECVD liftings solar battery sheet transformation efficiency |
| CN108899394A (en) * | 2018-06-28 | 2018-11-27 | 东方日升（洛阳）新能源有限公司 | A kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage |
| CN112201727A (en) * | 2020-09-28 | 2021-01-08 | 浙江晶科能源有限公司 | Method for manufacturing photovoltaic device |
| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104362185A (en) * | 2014-10-09 | 2015-02-18 | 西安黄河光伏科技股份有限公司 | Passivating film preparation method of crystalline silicon solar cell |
| CN104576833A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery |
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| CN112201727A (en) * | 2020-09-28 | 2021-01-08 | 浙江晶科能源有限公司 | Method for manufacturing photovoltaic device |
| CN114420770A (en) * | 2022-03-30 | 2022-04-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module thereof |
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Application publication date: 20131127 |