[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN103384706A - 切割裸片接合膜 - Google Patents

切割裸片接合膜 Download PDF

Info

Publication number
CN103384706A
CN103384706A CN2011800606340A CN201180060634A CN103384706A CN 103384706 A CN103384706 A CN 103384706A CN 2011800606340 A CN2011800606340 A CN 2011800606340A CN 201180060634 A CN201180060634 A CN 201180060634A CN 103384706 A CN103384706 A CN 103384706A
Authority
CN
China
Prior art keywords
adhesive layer
sensitive adhesive
pressure
pressure sensitive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800606340A
Other languages
English (en)
Inventor
鱼东善
金志浩
黃珉珪
赵敬来
宋基态
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cheil Industries Inc
Original Assignee
Cheil Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Publication of CN103384706A publication Critical patent/CN103384706A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J143/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Adhesives based on derivatives of such polymers
    • C09J143/04—Homopolymers or copolymers of monomers containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2312/00—Crosslinking
    • C08L2312/08—Crosslinking by silane
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2848—Three or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本发明提供一种普通减压类型的切割裸片接合膜，其中粘性粘合剂层相对于环形框架和粘合剂层的粘性粘合强度被调节至合适的比例，从而避免对于象环形框架涂布之类额外加工的需要，并且免去了紫外线照射处理中必然伴有的时间和费用。

Description

切割裸片接合膜
技术领域
本发明涉及压敏切割裸片接合膜（dicing die bonding film）。更具体地，本发明涉及包含对环形框架的粘合强度和对接合层的粘合强度具有特定比例的压敏粘合剂层的普通压敏切割裸片接合膜，从而避免对于象环形框架涂布之类额外加工的需要，并且不需要用于UV照射的时间和费用。
背景技术
为了向芯片传递电信号，常规的切割膜经过额外的处理，以将晶圆切割后的单独的芯片接合到支撑元件，例如PCB或引线框架上。为了电信号的传递，在支撑元件上引入液态环氧树脂，并且将各个单独的芯片接合其上。因此，各个芯片通过环氧树脂接合到支撑元件上。这个方法包含两个加工步骤，从成本和产率的角度看这两个加工步骤是有问题的。为了解决上述问题，越来越多地使用切割裸片接合膜。
切割裸片接合膜大致可分为两种类型：UV固化型和普通压敏型。就前一种类型来说，切割后通过UV照射的压敏粘合剂层的固化显著减低了压敏粘合剂层和上覆的粘合剂层之间的剥离强度，使得在后续加工中易于拾取薄膜，例如80μm或更薄的晶圆。然而，UV照射可能需要大量的时间及成本的增加。
因此，需要开发普通压敏切割裸片接合膜，其具有与UV固化切割裸片接合膜相同的性能，而不需要经历例如环形框架涂布的进一步加工。
发明内容
技术问题
本发明的一个方面在于提供一种可以避免对于象环形框架涂布之类进一步加工需要的压敏切割裸片接合膜。
本发明的另一个方面在于提供一种通过包含对环形框架和粘合剂层具有不同粘合强度的压敏粘合剂层而具有环形框架的良好稳定性和高拾取成功率的压敏切割裸片接合膜。
本发明的再一个方面在于提供一种可以解决常规UV固化膜的成本和产率问题的压敏切割裸片接合膜。
技术方案
本发明的一个方面提供一种压敏切割裸片接合膜，包括基膜、形成在所述基膜上的压敏粘合剂层以及形成在所述压敏粘合剂层上的接合层，其中，（A）所述压敏粘合剂层与接合层之间的粘合强度同（B）所述压敏粘合剂层与环形框架之间的粘合强度满足下面的关系：
B/A≥1.1
在一个实施方式中，在蠕变试验中当向所述压敏粘合剂层施加10gf/mm2的力时，所述压敏粘合剂层具有0至0.1mm的移动距离。
在一个实施方式中，所述压敏粘合剂层可包含具有乙烯基的丙烯酸粘结剂、热固化剂和硅烷偶联剂。
在一个实施方式中，基于所述压敏粘合剂层的固含量，所述硅烷偶联剂的含量可为0.1wt%至5wt%。
在一个实施方式中，基于所述压敏粘合剂层的固含量，所述具有乙烯基的丙烯酸粘结剂、所述热固化剂和所述硅烷偶联剂的含量可分别为85wt%至98.9wt%、1wt%至10wt%和0.1wt%至5wt%。
发明有益效果
本发明的压敏切割裸片接合膜为压敏类型，并且可以避免对于象环形框架涂布的进一步加工的需要。此外，本发明的压敏切割裸片接合膜具有环形框架的良好稳定性和高拾取成功率。
附图说明
图1示意性地例示了使用切割裸片接合膜的晶圆加工步骤；以及
图2例示了根据本发明的一示例性实施方式的切割裸片接合膜。
发明最佳方式
本发明的各个方面提供一种压敏切割裸片接合膜，包括基膜、形成在所述基膜上的压敏粘合剂层和形成在所述压敏粘合剂层上的接合层，其中，所述压敏粘合剂层与所述接合层之间的粘合强度同所述压敏粘合剂层与环形框架之间的粘合强度满足下面的关系：
B/A≥1.1
（其中，A为所述压敏粘合剂层与所述接合层之间的粘合强度，并且B为所述压敏粘合剂层与环形框架之间的粘合强度）。
图1示意性地例示了使用普通切割裸片接合膜的晶圆加工步骤。切割裸片接合膜可包含基膜4、形成在所述基膜上的压敏粘合剂层5、形成在所述压敏粘合剂层上的接合层3和形成在所述接合层上的离型膜6。离型膜保护接合层不受外在物质影响，并用于方便以辊形式卷绕。首先，剥去离型膜6。然后，将晶圆2层压在接合层3上，环形框架1层压在压敏粘合剂层5上，随后切割晶圆。切割后，各个单独的晶圆芯片(wafer chip)连同接合层一起接合到支撑元件，例如PCB或引线框架上。
当普通切割裸片接合膜的压敏粘合剂层具有低的粘合强度时，由于压敏粘合剂层和环形框架之间低的粘合强度，在切割加工过程中可能发生环形框架与压敏粘合剂层的部分脱离。这种部分脱离导致芯片在切割过程中被移动，因而增加了芯片损坏的危险，例如芯片裂纹。此外，压敏粘合剂层在在环形框架的固定状态下向膜施加恒定张力以使膜膨胀的膨胀(expansion)过程中，可能与环形框架脱离，导致遍布晶圆的瑕疵的形成。同时，压敏粘合剂层和接合层之间的高粘合强度使得在切割后难以使压敏粘合剂层与接合层分离，导致低的拾取成功率。
图2例示了根据本发明一示例性实施方式的切割裸片接合膜。所述切割裸片接合膜的特征为，压敏粘合剂层5与接合层3之间的粘合强度A同压敏粘合剂层5与环形框架1之间的粘合强度B满足关系B/A≥1.1。比例B/A优选为1.2至3。如果比例B/A小于1.1，则在切割过程中环形框架可能脱离并变得不稳定。通过调节压敏粘合剂层与环形框架之间的粘合强度A同压敏粘合剂层与接合层之间的粘合强度B的比例到上面限定的范围内，可解决常规UV固化和普通压敏切割裸片接合膜的问题。
可通过本领域中已知的合适方法测量压敏切割裸片接合膜的压敏粘合剂层与接合层之间的粘合强度A。例如，可根据韩国工业标准KS-A-01107(8)测量粘合强度A。具体地，在2kg的负荷和300mm/min的速度下通过压辊的一个往复来挤压切割裸片接合膜。挤压后30分钟，测试片的一部分被折叠、翻转并剥离（～25mm）。将测试片定位于拉力试验机(Instron Series lX/s Automated Materials Tester-3343)的上夹具并将裸片接合膜固定于拉力试验机的下夹具。测量以300mm/s的拉伸速率进行拉拽而剥离裸片接合膜所需的负荷。所述负荷被定义为粘合强度A。
根据韩国工业标准KS-A-01107(8)测量，压敏切割裸片接合膜的压敏粘合剂层与接合层之间的粘合强度A可为0.15N/25mm至0.25N/25mm。
可通过本领域已知的合适方法测量压敏切割裸片接合膜的压敏粘合剂层与环形框架之间的粘合强度B。例如，可通过下面的步骤测量粘合强度B。首先，在2kg的负荷和300mm/min的速度下通过压辊的一个往复挤压切割膜。挤压后30分钟，测试片的一部分被折叠、翻转并剥离（～25mm）。将测试片定位于拉力试验机(Instron Series lX/sAutomated Materials Tester-3343)的上夹具并将切割膜固定于拉力试验机的下夹具。测量以300mm/s的拉伸速率进行拉拽而剥离切割膜所需的负荷。所述负荷被定义为粘合强度B。
通过上面的步骤测量，压敏切割裸片接合膜的压敏粘合剂层与环形框架之间的粘合强度B可为0.18N/25mm至0.40N/25mm。
在蠕变试验中，当向压敏切割裸片接合膜的压敏粘合剂层施加10gf/mm2的力达到1000秒时，其可具有0至0.1mm的移动距离。在这个范围内，压敏粘合剂层和环形框架之间的粘合强度足够高，从而防止环形框架与压敏粘合剂层脱离。优选地，所述移动距离可为0.02mm至0.03mm。
压敏切割裸片接合膜的压敏粘合剂层可具有单层结构。为了让切割裸片接合膜的压敏粘合剂层具有与接合层和与环形框架之间的不同的粘合强度，在压敏粘合剂层和环形框架之间加入另一个压敏粘合剂层。在一个实施方式中，根据本发明的切割裸片接合膜的压敏粘合剂层具有单层结构，从而获得易生产性和易加工性。压敏粘合剂层的厚度可在3μm至40μm的范围内，但不限于此范围。优选地，压敏粘合剂层具有5μm至30μm的厚度。
压敏切割裸片接合膜的压敏粘合剂层可包含具有乙烯基的丙烯酸粘结剂、热固化剂和硅烷偶联剂。
具有乙烯基的丙烯酸粘结剂
可在聚合引发剂的存在下通过聚合作为主要单体的能够给予压敏粘合剂层粘合性的丙烯酸单体与功能性丙烯酸单体，来制备具有乙烯基的丙烯酸粘结剂。优选地，压敏粘合性粘结剂为在聚合引发剂的存在下通过聚合丙烯酸单体与功能性丙烯酸单体而制备的丙烯酸多元醇树脂。
丙烯酸单体用于给予膜粘合性。丙烯酸单体可以包括但不限于C4-C20丙烯酸酯或甲基丙烯酸酯。这样的丙烯酸单体的具体实例包括(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯和(甲基)丙烯酸十八烷基酯。这些丙烯酸单体可单独使用或以它们的两种或更多种的混合物使用。优选地，丙烯酸单体具有-70℃至-30℃的玻璃化转变温度。
基于构成丙烯酸粘结剂的所有单体的总重，丙烯酸单体的含量可为60wt%至84wt%。在这个范围内，丙烯酸单体可决定压敏粘合性粘结剂的Tg和模量。丙烯酸单体的含量优选为65wt%至79wt%，更优选70wt%至79wt%。由于具有低Tg的丙烯酸2-乙基己酯的提高压敏粘合性粘结剂的粘着性的能力，其特别优选作为丙烯酸单体。
功能性丙烯酸单体可选自由具有至少一个羟基的单体、含有至少一个环氧基的单体、反应性单体和它们的组合组成的组中。优选使用具有羟基的单体和含有环氧基的单体的组合作为功能性丙烯酸单体。
具有羟基的单体没有特别的限制，其实例包括具有至少一个羟基的C4-C20丙烯酸酯、具有至少一个羟基的C4-C20甲基丙烯酸酯，和具有至少一个羟基的其它化合物。具体地，具有羟基的单体可选自由(甲基)丙烯酸羟甲酯、(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸羟丙酯、乙烯基己内酰胺及其混合物组成的组中。
基于构成丙烯酸粘结剂的所有单体的总重，具有羟基的单体的含量可为15wt%至25wt%。在这个范围内，可提高压敏粘合剂层对环形框架的粘合性，而不会不利地影响拾取过程。具有羟基的单体的含量优选为20wt%至25wt%。
含有环氧基的单体没有特别的限制，其实例包括含有至少一个环氧基的C4-C20丙烯酸酯、含有至少一个环氧基的C4-C20甲基丙烯酸酯，和含有至少一个环氧基的其它化合物。具体地，含有环氧基的单体可选自由丙烯酸缩水甘油酯和(甲基)丙烯酸缩水甘油酯组成的组中。
基于构成丙烯酸粘结剂的所有单体的总重，含有环氧基的单体的含量可为1wt%至10wt%。这个范围有利于拾取过程。含有环氧基的单体的含量优选为1wt%至5wt%。
反应性单体可选自由具有至少10个碳原子的单体和它们的混合物组成的组中。反应性单体优选为月桂醇(甲基)丙烯酸酯、(甲基)丙烯酸硬酯（stearyl(meth)acrylate）、(甲基)丙烯酸十六酯或(甲基)丙烯酸十八酯（octadecyl(meth)acrylate）。
基于构成丙烯酸粘结剂的所有单体的总重，反应性单体的含量可为0至5wt%。在这个范围内，可增强压敏粘合性粘结剂的释放能力，这有利于拾取过程。
聚合引发剂可为自由基生成剂。这样的自由基生成剂的实例包括但不限于：偶氮双化合物，例如偶氮二异丁腈；和有机过氧化物，例如过氧化苯甲酰。基于100重量份的包含在丙烯酸粘结剂中的所有单体，聚合引发剂的含量可为0.1至1.0重量份。聚合引发剂的含量优选为0.2至0.6重量份。如果需要，聚合引发剂可与催化剂或聚合抑制剂结合使用。
聚合反应可在80℃至120℃的温度下进行1至70小时，但不限于这些聚合反应条件。聚合反应时间优选为5至15小时。
基于压敏粘合剂层的固含量，具有乙烯基的丙烯酸粘结剂的含量可为85wt%至98.9wt%。在这个范围内，可获得均匀的粘合强度。丙烯酸粘结剂的含量优选为90wt%至95.8wt%。
具有乙烯基的丙烯酸粘结剂可具有150,000g/mol至700,000g/mol的重均分子量。在这个范围内，压敏粘合剂可易于附着到基板上，并且可不被转移到环形框架或粘合剂上而被大规模生产。
热固化剂
适用于压敏粘合剂层的生产的热固化剂的实例可包括但不限于，异氰酸酯热固化剂，例如2,4-三氯乙烯二异氰酸酯、2,6-三氯乙烯二异氰酸酯、氢化三氯乙烯二异氰酸酯、1,3-二甲苯二异氰酸酯、1,4-二甲苯二异氰酸酯、二苯基甲烷-4,4-二异氰酸酯、1,3-二异氰酸甲基环己烷、四甲基二甲苯二异氰酸酯、1,5-萘二异氰酸酯、2,2,4-三甲基六亚甲基二异氰酸酯、2,4,4-三甲基六亚甲基二异氰酸酯、三羟甲基丙烷的三氯乙烯二异氰酸酯加合物、三羟甲基丙烷的二甲苯二异氰酸酯加合物、三苯基甲烷三异氰酸酯和亚甲基双三异氰酸酯。这些热固化剂可单独使用，或以它们的两种或更多种的混合物使用。
基于压敏粘合剂层的固含量，热固化剂的含量可为1wt%至10wt%。在这个范围内，热固化剂可保持压敏粘合剂层和环形框架之间的粘合强度，并允许压敏粘合剂层方便地应用到拾取过程。热固化剂的含量优选为4wt%至8wt%。
硅烷偶联剂
除了具有乙烯基的丙烯酸粘结剂和热固化剂，压敏粘合剂层可包含硅烷偶联剂。
当在切割裸片接合膜上安装晶圆并切割时，硅烷偶联剂的使用可稳定环形框架和压敏粘合剂层。在缺少硅烷偶联剂时，过量热固化剂的使用可进一步劣化环形框架和压敏粘合剂层的稳定性。为解决不稳定性的问题，特别处理的环形框架已经用于未经UV处理的普通压敏切割裸片接合膜中。但是这需要高的成本，并使整个过程复杂。
相反，硅烷偶联剂的使用可确保环形框架和压敏粘合剂膜的良好稳定性，而不需要对环形框架的进一步加工。此外，可获得与UV可固化膜相似的蠕变。
基于压敏粘合剂层的固含量，硅烷偶联剂的含量可为0.1wt%至5wt%。在这个范围内，可最大化地保持B/A比。硅烷偶联剂的含量优选为0.2wt%至2wt%。
对硅烷偶联剂的种类没有特别限制。例如，硅烷偶联剂可选自由环氧硅烷、巯基硅烷、氨基硅烷、乙烯基三氯硅烷、乙烯基三甲氧基硅烷、3-缩水甘油氧丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、2-氨乙基-3-氨丙基甲基二甲氧基硅烷、3-脲丙基三乙氧基硅烷和它们的混合物组成的组中。
压敏粘合剂层可进一步包含溶剂以促进涂布或转移到基膜。溶剂可为本领域中通常使用的那些的任何一种，例如甲乙酮。对溶剂的用量没有限制。例如，基于100重量份的压敏粘合剂层的固含量，溶剂的用量可为70至80重量份。
压敏粘合剂层不包含任何光引发剂。传统的UV照射型切割裸片接合膜的压敏粘合剂层包含光引发剂。光引发剂固化压敏粘合剂层从而使压敏粘合剂层与接合层分离。相反，压敏切割裸片接合膜不需要经受UV照射，从而不需要使用光引发剂。
压敏粘合剂层抓住晶圆以防止晶圆在切割中移动。基膜用于支撑压敏粘合剂层。基膜优选为在室温下可伸展的膜，以便允许膨胀处理。进行膨胀处理的目的在于增加切割完成后单个芯片之间的间隔，从而有助于芯片的拾取。
各种聚合材料可用作基膜。特别地，热塑性塑料膜可用作基膜。热塑性膜在切割后可充分地膨胀以拾取芯片，并且在一些情况下，膨胀后剩余的芯片在一段时间后被再次拾取。也就是说，热塑性膜由于其恢复能力而适于用作基膜。适用于基膜的聚合材料实例包括诸如聚乙烯、聚丙烯的聚烯烃类、乙烯/丙烯共聚物类、聚丁烯-1、乙烯/乙酸乙烯酯共聚物类、聚乙烯/苯乙烯丁二烯橡胶共混物类和聚氯乙烯。还可使用诸如聚对苯二甲酸乙二醇酯、聚碳酸酯和聚(甲基丙烯酸甲酯)的聚合物类、诸如聚氨酯和聚酰胺-多元醇共聚物类的热塑性弹性体类以及它们的混合物。考虑到延伸性和加工性，基膜的厚度优选为30μm至300μm、更优选50μm至200μm。
压敏粘合剂层可通过各种技术形成在基膜上。例如，压敏粘合剂层可通过涂布直接形成在基膜上。或者，压敏粘合剂层可通过涂布形成在离型膜上，干燥并转移到基膜。不论哪种情况，可无限制地使用任何适于形成均匀涂层的技术来形成压敏粘合剂层。主要使用棒式涂布(bar coating)、凹版涂布(gravure coating)、逗号刮涂(commacoating)、逆转辊涂布(reverse roll coating)、涂敷器涂布(applicator coating)、喷涂和浸渍涂布。压敏粘合剂层具有3μm至40μm的厚度，优选5μm至30μm的厚度。
压敏切割裸片接合膜的接合层为膜的形态，并且由热固化组合物形成。接合层应该对晶圆的底层背面（ground backside）具有良好的粘合性。接合层由热固化树脂和固化剂构成。热固化树脂包括具有高分子量并具有形成膜能力的丙烯酸共聚物和环氧树脂。作为丙烯酸共聚物，可例举丙烯酸橡胶，其为丙烯酸酯或甲基丙烯酸酯与丙烯腈的共聚物。环氧树脂没有特别的限制，只要其在固化后具有高粘合强度。环氧树脂应具有两个或更多个用于固化的官能团。这样的环氧树脂的实例包括双酚A环氧树脂类、酚醛清漆环氧树脂类和甲酚醛清漆环氧树脂类。固化剂可为那些常用于形成粘合剂层的任何固化剂。
可使用固化促进剂以固化环氧树脂。固化促进剂可为咪唑型或胺型。可使用一种或多种硅烷偶联剂来提高对晶圆的粘附力。
可以无具体限制地使用任何适于获得均匀涂层厚度的涂布技术来形成接合层。还可使用用于形成压敏粘合剂层的涂布技术来形成接合层。接合层具有5μm至100μm的涂层厚度，优选10μm至80μm的涂层厚度。
切割裸片接合膜可进一步包括离型膜以保护接合层不受外在物质影响并且方便以辊形式卷绕。
切割裸片接合膜具有压敏粘合剂层形成在基膜上并且接合层层压在该压敏粘合剂层上的结构。半导体芯片粘贴到接合层上并切割成具有较小尺寸的芯片。芯片在拾取时易于从下面的压敏粘合剂层剥离。拾取的芯片接合到支撑元件例如PCB或引线框架的表面（“芯片接合”）。此时，接合层粘贴到芯片的背面。
发明方式
下文中，将参照以下实例更详细地解释本发明的构成和功能。提供这些实例仅用于说明目的，并且不应以任何方式解释成对本发明的限制。
本领域技术人员将容易地认识并领会在此处未包含的实施方式，因而省略其说明。
实例
制备例1：制备丙烯酸粘结剂
将500g的醋酸乙酯放入2L的装备回流冷凝器、温度计和滴液漏斗的四颈烧瓶中。提高温度到77℃。将390g的丙烯酸2-乙基己酯、60g的丙烯酸异辛酯、60g的甲基丙烯酸2-羟乙酯、60g的丙烯酸2-羟乙酯、30g的甲基丙烯酸缩水甘油酯和0.15g的偶氮二异丁腈进行混合。在77℃历时3小时并伴随200rpm的搅拌来将混合物通过滴液漏斗逐滴地加入到烧瓶中。在逐滴加入完成后，让产生的混合物在86℃反应4小时。将150g的醋酸乙酯和0.15g的偶氮二异丁腈的混合物以20分钟加入到烧瓶中，并于82℃放置4小时，得到在25℃下具有2540cps粘度的丙烯酸粘结剂。
制备例2：制备UV固化丙烯酸粘结剂
将100重量份的制备例1中制备的丙烯酸粘结剂的固体放入2L的四颈烧瓶中，然后加入130重量份的醋酸乙酯和120重量份的甲苯。将20重量份的甲基丙烯酸2-异氰酸基乙酯和30ppm的DBTDL加入到烧瓶中。在55℃下以300rpm搅拌混合物8小时。通过FT-IR确认不含有作为丙烯酸粘结剂与甲基丙烯酸2-异氰酸基乙酯之间反应结果的异氰酸酯基。加入醋酸乙酯以冷却反应混合物，得到UV可固化的丙烯酸粘结剂。
实例1～8和对比例1～3中使用的组分的详情如下：
1.丙烯酸粘结剂：如制备例1和2中所制备
2.热固化剂：异氰酸酯固化剂（AK-75，Aekyung Chemical，‘固化剂1’）和异氰酸酯固化剂（TKA-10,Asahi Kasei Corporation，‘固化剂2’）
3.硅烷偶联剂：KBM-803(Shin-Etsu Chemical Co.,Ltd.，‘偶联剂1’）和KBM-403(Shin-Etsu Chemical Co.,Ltd.，‘偶联剂2’）
4.光引发剂：Darocur1173(Ciba Chemical)
5.溶剂：甲乙酮
实例1～8：生产压敏切割裸片接合膜
以表1中示出的量混合制备例1中制备的丙烯酸粘结剂、相应的热固化剂、相应的硅烷偶联剂和溶剂（甲乙酮）。每种混合物在25℃下搅拌1小时以制备压敏粘合剂组合物。将所述压敏粘合剂组合物在PET膜上涂布至10μm的厚度，转移到作为基膜的聚烯烃膜上，并在25℃下老化3天。将老化的样品(25mm×250mm)粘附到其上已形成PET膜的20μm厚的粘合剂层上，以生产切割裸片接合膜。
对比例1和2：生产压敏切割裸片接合膜
以表1中示出的量混合制备例1中制备的丙烯酸粘结剂、热固化剂和溶剂（甲乙酮）。每种混合物在25℃下搅拌1小时以制备压敏粘合剂组合物。然后，重复实例1～8中的步骤以生产切割裸片接合膜。
对比例3：生产UV照射型切割裸片接合膜
以表1中示出的量混合制备例2中制备的丙烯酸粘结剂、热固化剂、光引发剂和溶剂（甲乙酮）。将混合物在25℃下搅拌1小时以制备压敏粘合剂组合物。然后，重复实例1～8中的步骤以生产切割裸片接合膜。
表1
Figure GDA0000369192380000101
试验例1：压敏粘合剂组合物的物理性质的测量
通过下面的方法测量实例1～8和对比例1～3中制备的压敏粘合剂组合物的物理性质。结果示于表2中。
1.压敏粘合剂层和接合层之间的粘合强度：根据韩国工业标准KS-A-01107(8)进行粘合强度的测量。具体地，通过压辊的一个往复在2kg的负荷下以300mm/min的速度挤压实例1～8和对比例1～3中生产的每个切割裸片接合膜。挤压后30分钟，测试片的一部分被折叠、翻转180度并剥离（～25mm）。将测试片定位于拉力试验机(Instron SerieslX/s Automated Materials Tester-3343)的上夹具，并将芯片接合膜固定于拉力试验机的下夹具。测量以300mm/s的拉伸速率进行拉拽而剥离芯片接合膜所需的负荷。用UV以200mJ/cm2的辐照剂量照射对比例3的切割裸片接合膜。
2.压敏粘合剂层和环形框架之间的粘合强度：通过压辊的一个往复在2kg的负荷下以300mm/min的速度挤压实例1～8和对比例1～3中生产的每个切割膜。挤压后30分钟，测试片的一部分被折叠、翻转180度并剥离（～25mm）。将测试片定位于拉力试验机(Instron Series lX/s Automated Materials Tester-3343)的上夹具并将切割膜固定于拉力试验机的下夹具。测量以300mm/min的拉伸速率进行拉拽而剥离切割膜所需的负荷。
3.蠕变：实例1～8和对比例1～3中老化的每个切割膜粘附到玻璃板的一个区域（1.5cm×1.5cm），并在25℃下放置1天。当用万能试验机（UTM）向样品施加10gf/mm2的力1000秒时，测量样品的推动距离。
4.粘着性：按照ASTM D2979-71进行粘着性测量。具体地，在将探针的针尖以10±0.1mm/秒的速率在9.79±1.01kPa的接触负荷下与上面生产的测试片的各压敏粘合剂部分接触1.0±0.01秒后，测量使针尖与压敏粘合剂部分分开所需的最大力。用UV以200mJ/cm2的辐照剂量照射对比例3的切割裸片接合膜。
5.对基膜的粘合强度：以1mm的水平和垂直间隔横切实例1～8和对比例1～3中生产的切割裸片接合膜的每个压敏粘合剂层，以形成总共100个块。在将一粘合带粘附到所述块上并迅速拉拽后，检查上述块的剥离状态，以评估对基膜的粘合强度。表2中，‘100/100’表明所有的块保持粘附。
6.切割后环形框架的稳定性：在下面的条件下切割实例1～8和对比例1～3中生产的切割裸片接合膜。
仪器：DISCO Dicer DFD-6361
刀片的转数：50,000rpm
刀片速度：50mm/秒
切割膜的厚度：110μm
切割膜的切削深度：15μm
基于下面的三个标准评价环形框架的稳定性：
○：环形框架与压敏粘合剂层之间95～100%的总面积保持粘附
△：环形框架与压敏粘合剂层之间80-95%的总面积保持粘附
×：环形框架与压敏粘合剂层之间小于85%的总面积保持粘附
7.拾取成功率：从实例1～8和对比例1～3中生产的每个切割裸片接合膜上除去PET膜后，安装晶圆并切割成芯片。用芯片接合机(SDB-10M,Mechatronics)拾取晶圆中心部分的200个芯片，并且测量芯片的拾取成功率。
表2
Figure GDA0000369192380000121
从表2中的结果可看出，每个中都不包含硅烷偶联剂的对比例1和2中的切割裸片接合膜在切割中显示出环形框架在压敏粘合剂层上差的稳定性。特别地，当增加热固化剂的含量而不使用任何硅烷偶联剂时，环形框架的稳定性恶化，并且拾取成功率降低。相反，本发明的压敏切割裸片接合膜显示出环形框架的更好的稳定性和更高的拾取成功率。此外，本发明的压敏切割裸片接合膜具有几乎与UV固化切割裸片接合膜包括蠕变在内的相同的性能。

Claims (13)

1.一种压敏切割裸片接合膜，包括基膜、形成在所述基膜上的压敏粘合剂层和形成在所述压敏粘合剂层上的接合层，其中，(A)所述压敏粘合剂层与所述接合层之间的粘合强度同(B)所述压敏粘合剂层与环形框架之间的粘合强度满足下面的关系：
B/A≥1.1。
2.如权利要求1所述的压敏切割裸片接合膜，其中，在蠕变试验中，当向所述压敏粘合剂层施加10gf/mm2的力时，所述压敏粘合剂层具有0至0.1mm的移动距离。
3.如权利要求1所述的压敏切割裸片接合膜，其中，所述压敏粘合剂层具有单层结构。
4.如权利要求1所述的压敏切割裸片接合膜，其中，所述压敏粘合剂层具有3μm至40μm的厚度。
5.如权利要求1所述的压敏切割裸片接合膜，其中，所述压敏粘合剂层包含硅烷偶联剂。
6.如权利要求5所述的压敏切割裸片接合膜，其中，基于所述压敏粘合剂层的固含量，所述硅烷偶联剂的含量为0.1wt%至5wt%。
7.如权利要求1所述的压敏切割裸片接合膜，其中，所述压敏粘合剂层包含具有乙烯基的丙烯酸粘结剂、热固化剂和硅烷偶联剂。
8.如权利要求7所述的压敏切割裸片接合膜，其中，基于所述压敏粘合剂层的固含量，所述硅烷偶联剂的含量为0.1wt%至5wt%。
9.如权利要求7所述的压敏切割裸片接合膜，其中，基于所述压敏粘合剂层的固含量，所述压敏粘合剂层包含85wt%至98.9wt%的所述具有乙烯基的丙烯酸粘结剂、1wt%至10wt%的所述热固化剂和0.1wt%至5wt%的所述硅烷偶联剂。
10.如权利要求7所述的压敏切割裸片接合膜，其中，所述具有乙烯基的丙烯酸粘结剂具有150,000g/mol至700,000g/mol的重均分子量。
11.如权利要求7所述的压敏切割裸片接合膜，其中，所述热固化剂为异氰酸酯热固化剂。
12.如权利要求5或7所述的压敏切割裸片接合膜，其中，所述硅烷偶联剂为环氧硅烷、巯基硅烷、乙烯基三氯硅烷、乙烯基三甲氧基硅烷、3-缩水甘油氧丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、2-氨乙基-3-氨丙基甲基二甲氧基硅烷和3-脲丙基三乙氧基硅烷中的至少一种。
13.如权利要求1或7所述的压敏切割裸片接合膜，其中，所述压敏粘合剂层不包含任何光引发剂。
CN2011800606340A 2010-12-17 2011-08-12 切割裸片接合膜 Pending CN103384706A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020100130084A KR20120068453A (ko) 2010-12-17 2010-12-17 다이싱 다이 본딩 필름
KR10-2010-0130084 2010-12-17
PCT/KR2011/005899 WO2012081794A1 (ko) 2010-12-17 2011-08-12 다이싱 다이 본딩 필름

Publications (1)

Publication Number Publication Date
CN103384706A true CN103384706A (zh) 2013-11-06

Family

ID=46244869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800606340A Pending CN103384706A (zh) 2010-12-17 2011-08-12 切割裸片接合膜

Country Status (5)

Country Link
US (1) US20130273355A1 (zh)
KR (1) KR20120068453A (zh)
CN (1) CN103384706A (zh)
TW (1) TW201226191A (zh)
WO (1) WO2012081794A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324454A (zh) * 2013-12-13 2016-02-10 株式会社Lg化学 用于形成切割膜的粘着层的组合物及切割膜
CN112351859A (zh) * 2019-05-29 2021-02-09 古河电气工业株式会社 玻璃加工用胶带

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6278178B2 (ja) * 2013-11-11 2018-02-14 日立化成株式会社 ウエハ加工用テープ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134689A (ja) * 2002-10-15 2004-04-30 Nitto Denko Corp ダイシング・ダイボンドフィルム
US20070120271A1 (en) * 2005-11-29 2007-05-31 Shin-Etsu Chemical Co., Ltd. Dicing and die bonding adhesive tape
KR100787721B1 (ko) * 2006-07-25 2007-12-24 제일모직주식회사 박막 웨이퍼의 가공에 적합한 다이싱 다이 본드 필름
CN101230177A (zh) * 2006-12-27 2008-07-30 第一毛织株式会社 压敏胶粘剂膜用组合物、压敏胶粘剂膜以及包括该膜的切割晶片粘结膜
KR20090070893A (ko) * 2007-12-27 2009-07-01 주식회사 엘지화학 버 특성 및 신뢰성이 우수한 다이싱 다이 본딩 필름 및반도체 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105226B2 (en) * 1998-08-26 2006-09-12 Lintec Corporation Pressure sensitive adhesive double coated sheet and method of use thereof
JP4443962B2 (ja) * 2004-03-17 2010-03-31 日東電工株式会社 ダイシング・ダイボンドフィルム
KR20080047990A (ko) * 2006-11-27 2008-05-30 린텍 가부시키가이샤 점접착제 조성물, 점접착 시트 및 반도체 장치의 제조방법
US7674859B2 (en) * 2007-06-28 2010-03-09 Lintec Corporation Adhesive composition and adhesive sheet
JP2009242605A (ja) * 2008-03-31 2009-10-22 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
KR101019756B1 (ko) * 2009-12-24 2011-03-09 제일모직주식회사 비자외선형 다이접착필름 및 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134689A (ja) * 2002-10-15 2004-04-30 Nitto Denko Corp ダイシング・ダイボンドフィルム
US20070120271A1 (en) * 2005-11-29 2007-05-31 Shin-Etsu Chemical Co., Ltd. Dicing and die bonding adhesive tape
KR100787721B1 (ko) * 2006-07-25 2007-12-24 제일모직주식회사 박막 웨이퍼의 가공에 적합한 다이싱 다이 본드 필름
CN101230177A (zh) * 2006-12-27 2008-07-30 第一毛织株式会社 压敏胶粘剂膜用组合物、压敏胶粘剂膜以及包括该膜的切割晶片粘结膜
KR20090070893A (ko) * 2007-12-27 2009-07-01 주식회사 엘지화학 버 특성 및 신뢰성이 우수한 다이싱 다이 본딩 필름 및반도체 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324454A (zh) * 2013-12-13 2016-02-10 株式会社Lg化学 用于形成切割膜的粘着层的组合物及切割膜
CN105324454B (zh) * 2013-12-13 2018-04-03 株式会社Lg化学 用于形成切割膜的粘着层的组合物及切割膜
CN112351859A (zh) * 2019-05-29 2021-02-09 古河电气工业株式会社 玻璃加工用胶带

Also Published As

Publication number Publication date
WO2012081794A1 (ko) 2012-06-21
US20130273355A1 (en) 2013-10-17
TW201226191A (en) 2012-07-01
KR20120068453A (ko) 2012-06-27

Similar Documents

Publication Publication Date Title
CN104271694B (zh) 带粘接性树脂层的片和半导体装置的制造方法
CN101376797B (zh) 用于压敏胶粘剂层的光固化组合物和用其制备的切割胶带
KR101570959B1 (ko) 보호막 형성용 복합 시트
CN102533173B (zh) 光学透明粘结剂、切割芯片接合膜和半导体器件
US8609515B2 (en) Dicing die bonding film, semiconductor wafer, and semiconductor device
TWI685557B (zh) 保護膜形成用複合片、及附保護膜之晶片的製造方法
CN105264033A (zh) 切割膜和切割晶片粘合膜
KR102346224B1 (ko) 접착제 조성물, 접착 시트 및 반도체 장치의 제조 방법
CN106189897A (zh) 切割芯片接合薄膜、半导体装置的制造方法及半导体装置
TWI566282B (zh) Cut the adhesive sheet
JP2015183172A (ja) ワーク固定シート及び樹脂層付きワーク固定シート
JP6597280B2 (ja) ダイボンディングフィルム
JP5237647B2 (ja) 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
CN103384706A (zh) 切割裸片接合膜
TWI688633B (zh) 具有樹脂層的工件固定片
KR101362876B1 (ko) 다이싱 다이 본딩 필름용 점착제 조성물
JP6205646B2 (ja) ダイ接着用複合シート
CN115926633A (zh) 用于半导体加工用压敏粘合带的压敏粘合剂组合物和使用该压敏粘合剂组合物的压敏粘合带
KR101138796B1 (ko) 아크릴계 점착 수지 조성물 및 이를 포함하는 광경화형 점착 조성물
KR100922682B1 (ko) 점착제 조성물 및 이를 이용한 점착 테이프
KR101362878B1 (ko) 다이싱 다이 본딩 필름용 점착제 조성물
CN102533148A (zh) 切割芯片粘合膜、切割芯片粘合膜用组合物和半导体装置
CN115135739A (zh) 热熔型粘合剂组合物和粘合片

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20131106