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CN103354228A - 半导体封装件及其制造方法 - Google Patents

半导体封装件及其制造方法 Download PDF

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CN103354228A
CN103354228A CN2013102885895A CN201310288589A CN103354228A CN 103354228 A CN103354228 A CN 103354228A CN 2013102885895 A CN2013102885895 A CN 2013102885895A CN 201310288589 A CN201310288589 A CN 201310288589A CN 103354228 A CN103354228 A CN 103354228A
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chip
substrate
semiconductor package
package part
mold compound
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陈峥嵘
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
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Abstract

本发明提供了一种半导体封装件及其制造方法。所述半导体封装件包括：基底；芯片，位于基底上；粘合层，位于基底和芯片之间，将芯片附于基底；导电结构，分散在粘合层中，将芯片与基底电连接；导电模制化合物，包封芯片并且接地。根据本发明的半导体封装件，可以防止芯片受电磁波干扰，并且不需要增加额外的工艺。

Description

半导体封装件及其制造方法
技术领域
本申请涉及一种半导体封装件及其制造方法，更具体地讲，本申请涉及一种改善了电磁波屏蔽、信号完整性和散热效果的半导体封装件及其制造方法。
背景技术
对于许多集成电路芯片来说，越来越多地使用高频信号。然而，高频信号经常伴随着信号完整性和电磁波屏蔽的问题。另外，对于功耗较大的半导体封装件，如何散热也是一个难题，例如，现有技术中经常使用散热胶等来散热。
图1是根据现有技术的半导体封装件的示意图。参照图1，根据现有技术的半导体封装件包括：基底10；芯片11，位于基底10上，通过粘合层20附于基底10，并且通过键合引线14与引线框架12电连接；包封树脂15，包封芯片11；屏蔽层16，形成在包封树脂15的外表面上，以防止芯片10受到电磁波干扰。
另外，根据现有技术的半导体封装件还包括接地焊盘18、竖直导电结构17和导电焊球19，其中，竖直导电结构17在接地焊盘18和屏蔽层16之间提供电连接，通过竖直导电结构17、屏蔽层16的一部分以及导电焊球19将接地焊盘18电连接到接地引线13。因此，虽然屏蔽层16仅形成在包封树脂15的外表面上，但是可以通过屏蔽层16形成从接地焊盘18到接地引线13的通路。
即，根据现有技术的半导体封装件，为了防止电磁干扰，需要在包封树脂15的外表面上形成单独的屏蔽层16，从而需要单独的制造工艺，增加了制造成本。
发明内容
为了克服现有技术中的问题，本发明提供了一种半导体封装件，所述半导体封装件包括：基底；芯片，位于基底上；粘合层，位于基底和芯片之间，将芯片附于基底；导电结构，分散在粘合层中，将芯片与基底电连接；导电模制化合物，包封芯片并且接地。
根据本发明的实施例，所述半导体封装件还包括位于基底中的接地焊盘和位于基底下方的接地焊球，所述导电模制化合物经由接地焊盘电连接到接地焊球。所述粘合层由绝缘材料制成，防止芯片与导电模制化合物电连接。
根据本发明的实施例，所述粘合层由聚对二甲苯制成。所述导电模制化合物由环氧树脂和金属导电颗粒制成或者由环氧树脂和导电化合物制成。
本发明还提供了一种半导体芯片，所述半导体封装件包括：基底；芯片，位于基底上；键合引线，将芯片电连接到基底；绝缘层，覆盖芯片和键合引线；导电模制化合物，包封芯片并且接地，其中，绝缘层防止芯片和键合引线与导电模制化合物电连接。
本发明提供了一种半导体封装件的制造方法，所述制造方法包括以下步骤：提供基底；通过粘合层将芯片附于基底，并且通过设置在粘合层中的导电结构将芯片与基底电连接；用导电模制化合物包封芯片，并且所述导电模制化合物接地。
本发明还提供了一种半导体封装件的制造方法，所述半导体封装件的制造方法包括以下步骤：提供基底；将芯片层叠在基底上方；通过键合引线将芯片电连接到基底；在芯片和键合引线上涂覆绝缘层；用导电模制化合物包封芯片，并且所述导电模制化合物接地。
通过采用导电模制化合物来包封芯片，将芯片的背面与接地焊盘电连接，从而能够防止芯片受电磁波干扰，并且能够快速散热。因此，根据本发明，不需要另外的结构来防止电磁干扰，简化了结构，降低了制造成本。
附图说明
通过结合附图详细描述本发明的实施例，本发明的许多特征和优点将变得更加清楚，在附图中：
图1是根据现有技术的半导体封装件的示意图；
图2是根据本发明第一示例性实施例的半导体封装件的剖视图；
图3是根据本发明第二示例性实施例的半导体封装件的剖视图。
具体实施方式
在下文中，将参照附图详细描述根据本发明实施例的半导体封装件。
图2是根据本发明第一示例性实施例的半导体封装件的剖视图。参照图2，根据本发明第一示例性实施例的半导体封装件包括：基底100；芯片130，位于基底100上，通过粘合层150附于基底100；导电结构140，分散在粘合层150中，将芯片130与基底100中的导电焊盘电连接；导电模制化合物160，包封芯片130，从而保护芯片130免受外部损坏；导电焊球，位于基底100下方，用于将芯片130电连接到外部电路。
根据本发明的第一示例性实施例，导电模制化合物160可以由环氧树脂和金属导电颗粒制成，或者可以由环氧树脂和其它导电化合物制成。导电模制化合物160将芯片130的背面经由接地焊盘120电连接到接地焊球110，从而作为半导体封装件的电磁波屏蔽组件并且能够起到优良的散热路径的作用。即，导电模制化合物160将芯片130的与附于基底100的表面相反的表面电连接到接地焊球110。其中，接地焊盘120位于基底100中，接地焊球110位于基底100下方，并且接地焊球110不与芯片130电连接。
根据本发明的第一示例性实施例的半导体封装件，粘合层150由绝缘材料形成，从而防止芯片130的与基底100电连接的表面与模制化合物160电连接。
根据本发明第一示例性实施例的半导体封装件通过在芯片上方采用导电化合物来进行包封，导电化合物可以起到电磁波屏蔽和散热的作用，而不需要像现有技术中的单独的屏蔽层，从而可以采用简单的制造工艺得到半导体封装件。
下面将详细描述制造根据本发明第一示例性实施例的半导体封装件的方法，所述方法包括以下步骤：提供基底100；通过粘合层150将芯片130附于基底100，并且通过设置在粘合层150中的导电结构140将芯片130与基底100电连接；用导电模制化合物160包封芯片130，并且所述导电模制化合物接地。
图3是根据本发明第二示例性实施例的半导体封装件的剖视图。参照图3，根据本发明第二示例性实施例的半导体封装件包括：基底100；芯片130，层叠在基底100上方，芯片130通过键合引线170电连接到基底100中的导电焊盘；绝缘层180，覆盖芯片130以及键合引线170；导电模制化合物160，包封芯片130，从而保护芯片130免受外部损坏。
根据本发明第二示例性实施例的半导体封装件可以包括多个芯片，例如，可以包括两个芯片。
根据本发明的第二示例性实施例，绝缘层180可以由聚对二甲苯形成，从而防止芯片130、键合引线170与导电模制化合物160电连接。
根据本发明的第二示例性实施例，覆盖芯片130的绝缘层180的外表面（即，与绝缘层180接触芯片130的表面相反的表面）、导电模制化合物160、接地焊盘120电连接到接地焊球110，从而防止半导体封装件受电磁波的干扰，并且能够用作优良的散热路径。其中，接地焊盘120位于基底100中，接地焊球110位于基底100下方，并且接地焊球110不与芯片130电连接。
另外，根据本发明的第二示例性实施例，半导体封装件还可以包括穿过绝缘层180形成的通孔190。导电模制化合物160填充通孔190，所以绝缘层180的外表面经由导电模制化合物160、通孔190、接地焊盘120电连接到接地焊球110，从而防止芯片130受电磁波干扰。
下面将详细描述根据本发明第二示例性实施例的半导体封装件的制造方法，所述制造方法包括以下步骤：提供基底100；将芯片130层叠在基底100上方；通过键合引线170将芯片130电连接到基底100；在芯片100和键合引线170上涂覆绝缘层180；用导电模制化合物160包封芯片130，并且所述导电模制化合物接地。
根据本发明的半导体封装件及其制造方法，通过采用导电模制化合物来包封芯片，将芯片的背面与接地焊盘电连接，从而能够防止芯片受电磁波干扰，并且能够快速散热。因此，根据本发明，不需要另外的结构来防止电磁干扰，简化了结构，降低了制造成本。
以上参照附图示例性地示出了本发明，本发明的范围由权利要求及其等同物限定。

Claims (10)

1.一种半导体封装件，其特征在于所述半导体封装件包括：
基底；
芯片，位于基底上；
粘合层，位于基底和芯片之间，将芯片附于基底；
导电结构，分散在粘合层中，将芯片与基底电连接；
导电模制化合物，包封芯片并且接地。
2.根据权利要求1所述的半导体封装件，其特征在于所述半导体封装件还包括位于基底中的接地焊盘和位于基底下方的接地焊球，所述导电模制化合物经由接地焊盘电连接到接地焊球。
3.根据权利要求1所述的半导体封装件，其特征在于所述粘合层由绝缘材料制成，防止芯片与导电模制化合物电连接。
4.根据权利要求3所述的半导体封装件，其特征在于所述粘合层由聚对二甲苯制成。
5.根据权利要求1所述的半导体封装件，其特征在于所述导电模制化合物由环氧树脂和金属导电颗粒制成或者由环氧树脂和导电化合物制成。
6.一种半导体芯片，其特征在于所述半导体封装件包括：
基底；
芯片，位于基底上；
键合引线，将芯片电连接到基底；
绝缘层，覆盖芯片和键合引线；
导电模制化合物，包封芯片并且接地，
其中，绝缘层防止芯片和键合引线与导电模制化合物电连接。
7.根据权利要求6所述的半导体封装件，其特征在于所述绝缘层由聚对二甲苯制成。
8.根据权利要求6所述的半导体封装件，其特征在于所述半导体封装件还包括位于基底中的接地焊盘和位于基底下方的接地焊球，所述导电模制化合物电连接到接地焊盘和接地焊球。
9.根据权利要求6所述的半导体封装件，其特征在于所述半导体封装件还包括穿过绝缘层的通孔，所述导电模制化合物经由所述通孔、接地焊盘电连接到接地焊球。
10.根据权利要求6所述的半导体封装件，其特征在于所述导电模制化合物由环氧树脂和金属导电颗粒制成或者由环氧树脂和导电化合物制成。
CN2013102885895A 2013-07-10 2013-07-10 半导体封装件及其制造方法 Pending CN103354228A (zh)

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