CN103334092B - Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor - Google Patents
Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor Download PDFInfo
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- CN103334092B CN103334092B CN201310233117.XA CN201310233117A CN103334092B CN 103334092 B CN103334092 B CN 103334092B CN 201310233117 A CN201310233117 A CN 201310233117A CN 103334092 B CN103334092 B CN 103334092B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a pipeline cooled gas distribution device used for a metal organic chemical vapour deposition reactor. The pipeline cooled gas distribution device comprises a gas spray tray, wherein a gas connecting plate is arranged above the gas spray tray, and a gas distribution plate is arranged between the gas connecting plate and the gas spray tray; and cooling liquid pipelines are arranged between every two structural plates, and each cooling liquid pipeline is made by bending one pipeline or splicing and welding multiple pipelines. The gas spraying head is also provided with a plurality of gas channels which are isolated from each other, such as a first precursor gas channel, a second precursor gas channel and a carrier gas channel, wherein the gas channels are connected with corresponding gas ports and can feed corresponding gases into a reaction chamber independently. According to the pipeline cooled gas distribution device used for a metal organic chemical vapour deposition reactor, pipeline type cooling is adopted, so that manufacturing difficulty of a spraying head is reduced, and sealing property and sealing reliability of the cooling liquid pipelines in the spraying head are improved.
Description
Technical field
The present invention relates to a kind of distribution device in gas-fluid for chemical vapour deposition (spray header), particularly the gas spray that cools of a kind of tubular type.
Background technology
MOCVD(Metal Organic Chemical Vapor Deposition) equipment, i.e. metal-organic chemical vapor deposition equipment, it especially has the effect of irreplaceability in LED industry in semiconductor industry, be equipment crucial especially.This equipment breaks through industry development bottleneck, improves the strategic high-tech semiconductor equipment of level of industry.
MOCVD device is that one integrates each subjects such as Fluid Mechanics Computation, heating power conduction, system integration control, compound growth, is the equipment of a kind of high-tech, new technology high concentration; The principle of work of MOCVD is that the metallorganics source (MO source) containing II race or III race's element is reacted under the condition strictly controlled with the gas source containing VI race or group Ⅴ element on wafer, and growth obtains required thin-film material.Common metal organism source is transported by carrier gas and enters reaction chamber, carrier gas can be hydrogen, nitrogen, rare gas element etc. not with the gas of reactant react with, the carrier gas containing MO source is called the first precursor gases; Gas source containing VI race or group Ⅴ element is generally also mixed with a certain proportion of carrier gas, is called the second precursor gases.
The temperature of MOCVD substrate surface when carrying out technique can reach 1200 DEG C, the temperature of substrate tray (slide glass dish) is higher, gas spray (spray header) is positioned at above slide glass dish, and (be no more than 80mm with the distance of slide glass dish is very little, the reaction chamber distance of part model only has about 10mm), therefore the power of its raying heating is very large.And gas spray is only lower at self-temperature, just can have the performance of the needs meeting technique in the uniform situation of surface temperature field.Because gas spray temperature can cause reactant source material at gas spray internal breakup higher than 150 DEG C, reduce the utilization ratio of source material, and affect deposition film quality.And the uneven meeting of gas spray surface temperature field causes slide glass panel surface non-uniform temperature, thus cause substrate surface deposit film composition and membrane thickness unevenness, therefore the design of Cooling System of spray header is an important component part of spray header design.
At present, the cooling passage Design and Machining mode generally used in spray header mainly contains following two kinds: 1) on spray header, get through hole, is then connected on request by through hole and carries out a point bond pads UNICOM formation cooling duct.2) on the corresponding construction plate of composition spray header, dig out formation cooling passage groove in advance, then the mode such as vacuum diffusion bonding, vacuum fusion welding is used to adopt aspectant mode to weld each structural slab, the groove processed in advance is closed, form cooling passage, as Chinese patent application CN201210118049.8 discloses a kind of inclined in type gas spray for metal organic chemical vapor deposition reactor, it comprises the gas injection plate be positioned at above reaction chamber, gas web plate and gas distribution grid; Described gas web plate is provided with some gas interfaces and coolant connection, but also there is weld seam integrity problem under the high temperature conditions and difficulty of processing problem in this application.
Along with the production-scale expansion of MOCVD mono-batch, the size of spray header is also increasing, therefore punch, that point bond pads UNICOM forms cooling passage mode medium-length hole hole depth is also increasing with the ratio in aperture, therefore the difficulty of deep hole machining is also increasing, and the processing of the cooling passage deep hole in current large size spray header is very difficult.And MOCVD spray header is a kind of to the exigent part of structure precision, exist under current size and added the very high problem of scrap rate in man-hour, at present from the data that processing producer obtains, yield rate only has about 1/3, and therefore the processing charges of MOCVD spray header remains high always.In addition at MOCVD spray header load facility, after composition complete machine, spray header weld seam leaks and can cause workpiece and well heater damage, thus causes MOCVD reaction chamber to damage, and brings huge financial loss.Preset cooling passage groove, also there is complex process, process the high problem of scrap rate in the method then using face-face welding to form cooling passage, and because spray header upper and lower surface exists the larger temperature difference in technological process, therefore also there is larger stress in spray header inside, the sealing reliability of the face that the welding of this opposite-face is formed--face weld seam is a very large challenge, is unfavorable for the raising of MOCVD device reliability.
Summary of the invention
In order to avoid there is difficult deep hole processing when processing spray header cooling passage, the requirement of showerhead configuration plate face-face welding can be reduced simultaneously, the present invention aims to provide a kind of tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor, the reliability of this tube type cooling device good seal performance, sealing is high, its sealing reliability is not by the impact of the stress caused due to spray header upper and lower surface temperature head in MOCVD technological process, thus reduce the scrap rate of product, improve production efficiency.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor, comprise the gas injection plate be positioned at above reaction chamber, be provided with gas web plate above this gas injection plate, between described gas injection plate and gas web plate, be provided with at least three stacked gas distribution grids; Its constructional feature is, between described gas injection plate and undermost gas distribution grid, between adjacent two layers gas distribution grid, be provided with coolant duct; Described gas web plate is provided with some gas interfaces, window installed by survey meter and the cooling fluid that is communicated with described coolant duct is imported and exported, and described gas injection plate, gas distribution grid, gas web plate form some separate gas passages after being superimposed, this gas passage comprises the first precursor gases passage, the second precursor gases passage and carrier gas passage; The upper and lower side of the upper side of described gas injection plate, the downside of gas web plate and each gas distribution grid is equipped with two grooves for holding coolant duct, separated by slit between two grooves, in described groove, coolant duct bending is horizontally disposed; Described survey meter is installed in window and is provided with the slit be communicated with gas interface; Described gas web plate and each gas distribution grid are equipped with coolant duct installation through hole.
Be below the technical scheme of further improvement of the present invention:
According to embodiments of the invention, described gas distribution grid preferably has three pieces.
The cross section of described groove is semicircle, semicircular string and described slit conllinear.
The quantity of described coolant duct is 1-16 root.Further, when coolant duct is many, many coolant ducts are separate cooling channel.
In order to firm described coolant duct, the connection between described coolant duct and gas injection plate, gas web plate, gas distribution grid adopts vacuum diffusion bonding to connect or vacuum fusion welding connects or is located by connecting with described groove.
The cross section of described groove is half elliptic or Polygons.
In order to detect chip warpage degree, described survey meter is installed window and is provided with chip warpage degree measuring sonde.
Above structure, the present invention includes gas web plate and gas injection plate, between affiliated gas web plate and gas injection plate, there is some gas distribution grids.Between gas injection plate and gas distribution grid and between gas distribution grid, be provided with cooling duct, this cooling duct is made up (or many pipeline downhand weldings are made) of single stainless steel tube bending.Described gas web plate is provided with some gas interfaces and cooling duct through hole, and on this gas distribution grid and gas injection plate, be provided with some mutually isolated gas passages, described gas passage is communicated with corresponding gas interface, as the first precursor gases passage, the second precursor gases passage, carrier gas passage etc.In the present invention, gas injection plate and corresponding gas distribution grid are all designed with groove, groove cross section is semicircle, rectangle, U-shaped or half-oval shaped, and groove loop shape is according to cooling duct the design of cooling circuit.In the present invention, cooling duct uses single pipe bending to make, and the mode of many pipeline weldings also can be used to make coolant duct.
In order to better cool spray header in the present invention, according to cooling requirement, multilayer cooling duct can be installed between jet tray and gas distribution grid, between gas distribution grid and gas distribution grid.
The coolant duct number of plies is 1-4 layer, and adjacent layers coolant duct is interspersed.
In the present invention, cooling duct can be directly installed between spray header two structural slab, as a kind of preferred version, can also the method such as vacuum fusion welding or vacuum diffusion bonding be used to weld together cooling duct and structural slab, to promote the cooling performance of coolant duct.
In the present invention, each structural slab can be together with bolts, and the mode such as vacuum diffusion bonding, vacuum fusion welding also can be adopted to weld together.
According to an embodiment of the present, described gas spray is made up of 5 Rotating fields plates, be respectively gas web plate, gas injection plate and first, second, third gas distribution grid, each structural slab is stacked in order, and uses the welding process such as diffusion welding, vacuum fusion welding to link together.Between gas injection plate and the 3rd gas distribution grid and between first and second gas distribution grid, coolant duct is installed.
In described spray header, each structural slab defines separately independently the first precursor gases passage, the second precursor gases passage and carrier gas passage after linking together, each passage respectively with reaction chamber chamber UNICOM.
The lower surface of described gas injection plate is relative with the wafer in reaction chamber, its upper surface is distributed with the groove installing cooling passage, the cross section of groove is semicircle, and groove and gas spout distribute in a parallel manner, connect between the straight-line groove be connected with tangent semi-circular recesses.
Described first gas distribution grid is distributed with the slit of formation first precursor gases, the second precursor gases passage, first gas distribution grid intermediate distribution has gas of carrier gas passage, other first gas distribution grid is also distributed with coolant duct outlet circular hole, is also distributed with groove that is corresponding with gas injection plate, that install coolant duct at its lower surface.And be also distributed with at the first gas distribution grid upper surface and the groove of coolant duct is installed, the coolant duct groove interval that the first upper and lower surface of gas distribution grid distributes, to be interspersed.
Described second gas distribution grid and the 3rd gas distribution grid similar, but the second gas distribution grid only has lower surface to be distributed with the groove installing coolant duct, and the distribution form of groove is corresponding with the distribution form that the 3rd gas distribution grid upper surface installs coolant duct groove.
3rd gas distribution grid is distributed with slit and the coolant duct outlet circular hole of formation first precursor gases passage, is also distributed with the second precursor gases diffusion admittance and the second precursor gases import at the 3rd gas distribution grid lower surface.
Gas web plate lower surface is distributed with the first precursor gases diffusion cavity, and surface arrangement has the first precursor gases, the second precursor gases, carrier gas interface and temperature, chip warpage degree measuring sonde installation window thereon.
First precursor gases enters spray header by gas web plate, at the first precursor gases diffusion chamber internal diffusion that gas web plate lower surface and the 3rd gas distribution grid upper surface are formed, be evenly distributed in each first precursor gases narrow slit type nozzle, then enter reaction chamber by nozzle ejection.
Second precursor gases enters spray header by gas web plate, and then the 3rd is uniformly distributed in each second precursor gases narrow slit type nozzle in the diffusion admittance that formed of gas distribution grid lower surface and the second gas distribution grid upper surface, then enter reaction chamber by nozzle ejection.
Carrier gas is installed window by probe on web plate upper surface and is introduced, then the gas of carrier gas passage in the middle part of each structural slab enters reaction chamber, and the Main Function of this carrier gas has 2 points: 1. promote that reaction chamber inside forms steady flow condition; 2. keep the clean of temperature, angularity measuring sonde Measurement channel.
Cooling fluid is linked in the coolant duct be arranged in spray header by the coolant duct stretched out above web plate, flowed out after refrigeration cycle by coolant pipe pipeline joint again, coordinates coolant temperature operating device can form stable refrigeration cycle.
Compared with prior art, the invention has the beneficial effects as follows: the coolant duct that the present invention adopts bending to be formed substitutes the manufacture difficulty that mode original, formed cooling passage by each structural slab groove reduces whole spray header, and improves the sealing reliability of cooling passage.By adopting the mode of installing multilayer coolant duct, the present invention can also improve the cooling performance of spray header further.
In the present invention, each structural slab of spray header can milling machine process easily again, and processing technology is good.After each structural slab and cooling duct are assembled, the method of bolt connection or diffusion welding can be used to connect structural slab, due to very low to the seal request between each structural slab, therefore also can reduce diffusion welding or bolted requirement, thus improve the manufacturability of whole spray header.Adopt spray header of the present invention to reduce the scrap rate that will reduce in the spray header course of processing due to difficulty of processing, significantly reduce the processing and manufacturing cost of spray header, and promote the work reliability of spray header.
Owing to present invention employs integrated piping as cooling passage, therefore there is not the possibility that cooling fluid is revealed in spray header inside substantially, thus reduce the probability of malfunction of equipment, improves plant factor, bring good economic benefit.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Accompanying drawing explanation
Fig. 1 is the structure of reactor schematic diagram using an embodiment of the present invention;
Fig. 2 is the explosive view schematic diagram of an embodiment of the present invention;
Fig. 3 is the structural representation of an embodiment of the present invention web plate;
Fig. 4 is the structural representation of an embodiment of the present invention;
Fig. 5 is an embodiment of the present invention gas web portion separation structure schematic diagram;
Fig. 6 is the structural representation of an embodiment of the present invention the 3rd gas distribution grid;
Fig. 7 is the structural representation of an embodiment of the present invention second gas distribution grid;
Fig. 8 is the present invention's another kind of embodiment coolant duct subregion schematic diagram.
Embodiment
Figure 1 shows that MOCVD reactor 100 schematic diagram using an embodiment of the present invention.This reactor top is gas incoming end 202,203,206, and cooling fluid imports and exports 201,207, and temperature, chip warpage degree survey meter 204 and temperature, chip warpage degree survey meter install window 205.Gas interface 202 is the second precursor gases supply line, and the second precursor gases is that gas containing group Ⅴ element is as ammonia; Gas interface 206 is the first precursor gases interface, and the first precursor gases is as the gas of trimethyl-gallium containing III race's element organism; Gas interface 203 connects carrier gas supply line, and carrier gas is the gas do not reacted with precursor gases, as nitrogen, hydrogen etc.; Cooling fluid is imported and exported 201,207 and is connected cooling system, for whole spray header provides cooling, temperature control.The below of reactor 100 is reaction end gas outlet 107, for discharging the waste gas of reaction chamber 103 inside and controlling reaction chamber internal pressure.Reaction chamber is surrounded by reaction chamber wall 106, chip bearing apparatus 104, spray header 200.Wherein spray header 200 is one embodiment of the present of invention, is mounted with the wafer 102 carrying out depositing below spray header 200, on chip bearing apparatus 104.Heating unit 105 is installed below chip bearing apparatus heat for wafer 102, at the temperature be in required for reaction to make wafer 102, and forms uniform heat-field on wafer 102 surface.
Figure 2 shows that the exploded perspective view of spray header of the present invention 200 1 kinds of embodiments.As shown in Figure 2, gas spray is made up of 5 Rotating fields Ban Jia tetra-road cooling passages, be respectively gas injection plate 210, first precursor gases grid distributor 212, second gas distribution grid the 214, three gas distribution grid 215, gas web plate 216, wherein coolant duct 211,218 is distributed between gas injection plate 210 and the first gas distribution grid 212, and coolant duct 213,217 is distributed between the first gas distribution grid and the second gas distribution grid.Each structural slab and coolant duct can use the welding process such as vacuum diffusion bonding, vacuum fusion welding to weld together under heating, pressurized conditions, formation spray header is overall, each structural part also can use dismountable mode to link together in addition, as bolt connects.
As previously mentioned, gas web plate 216 upper surface is distributed with gas inlet 202,203,206, cooling liquid inlet 211a, 213a, 217a, 218a, cooling liquid outlet 211b, 213b, 217b, 218b, temperature, chip warpage degree survey meter 204 and temperature, chip warpage degree survey meter install window 205.For making precursor gases be evenly distributed in each nozzle as much as possible, often kind of precursor gas inlet all uses two or more interface to be linked in reaction chamber.Composition graphs 2 and Fig. 3 visible gas web plate lower surface are also distributed with formation second precursor gases and distribute in advance the semi-circular recesses 308a of chamber 308.The sidewall that probe on gas web plate 216 installs the slit 305e of window 205 inside is also distributed with tuyere 203b, and this tuyere 203b is by being distributed in circular hole 305a in the length of slit 305e and 203 UNICOMs.Carrier gas is evenly distributed in tuyere 203b by 203a, thus the carrier gas entered in slit 305e is uniformly distributed along its length in slit 305e inside.The jet direction of tuyere 203b can also be adjusted in addition as required, such as by this nozzle direction furnishing obliquely, make carrier gas spray to probe orientation, specifically as shown in Figure 4.
Described gas web plate 216 is distributed with cooling liquid inlet and cooling liquid outlet, and preferred cooling liquid inlet, cooling liquid outlet distribute separately in pairs, and import, export into rotational symmetry distribution.
Described gas web plate 216 is distributed with gas interface 202,203,206, preferably the interface of similar gas distributes in a symmetrical manner.
3rd gas distribution grid 215 is positioned at below gas web plate 216, and its upper surface and gas web plate lower surface are fitted.Visible 3rd gas distribution grid of composition graphs 2, Fig. 4 and Fig. 6 is distributed with the second precursor gases passage 303d, the first precursor gases intake vent 304, coolant duct installation through hole 306b.Also be distributed with the first precursor gases diffusion admittance below 3rd gas distribution grid, this diffusion admittance comprises import 206a, circular channel 206b and diffusion admittance 307d, and the concrete distribution shape of diffusion admittance as shown in Figure 6.Other 3rd gas distribution grid is also distributed with viewing window passage 305d, and this passage is also carrier gas passage simultaneously.
Described 3rd gas distribution grid 215 is distributed with gas diffusion paths 307d, the width w of preferred gas diffusion paths 307d and the jet area corresponding to every bar diffusion admittance proportional.
Described 3rd gas distribution grid is distributed with the second precursor gases passage 303d, the first precursor gases diffusion admittance 307d, preferred second precursor gases passage 303d and the first precursor gases diffusion admittance 307d interval, is alternately distributed.
Second gas distribution grid 214 is positioned at below the 3rd gas distribution grid 215, and its upper surface and the 3rd gas distribution grid fit.Visible second gas distribution grid of composition graphs 2, Fig. 7 is distributed with the first precursor gases passage 303c, the second precursor gases passage 307c, viewing window passage (i.e. gas of carrier gas passage) 305c, coolant duct installation through hole 306c.Second gas distribution grid lower surface is also distributed with the groove installing coolant duct, and groove cross section is semicircle, and the distribution shape of groove 302b as shown in Figure 8.
Second gas distribution grid is distributed with groove 302b, the shape of cross section of preferred groove 302b is semicircle or half elliptic.
First gas distribution grid 212 is positioned at below the second gas distribution grid 214, and its upper surface and the second gas distribution grid fit.Visible first gas distribution grid of composition graphs 2, Fig. 4 and the second gas distribution grid structural similitude, difference is that the first upper and lower surface of gas distribution grid is all distributed with the groove installing coolant duct, the groove 302a that its upper surface installs coolant duct is corresponding with the groove 302b that the second gas distribution grid lower surface distributes, and the groove 301b of lower surface distribution is corresponding with the groove 301a that gas injection plate upper surface distributes.
Gas injection plate 210 is positioned at below the first gas distribution grid 212, and the upper surface of its upper surface and the first gas distribution grid fits, and lower surface is relative with wafer in reaction chamber 102.The visible gas injection plate of composition graphs 2, Fig. 4 is distributed with the second precursor gases passage 303a, the first precursor gases passage 307a, viewing window passage 305a.Gas injection plate 210 upper surface is also distributed with coolant duct and installs groove 301a, and its shape is corresponding with 301b.
Gas injection plate 210 is distributed with gas passage 303a, 307a, preferred gas passage shape can be long strip shape slit, small sircle hole or other geometrical shapies.
Gas injection plate 210 is distributed with gas passage 303a, 307a, preferred gas passage can become different angles with wafer surface, as 60 °.
Coolant duct 211,213,217,218 is arranged between corresponding structural slab by stacking order, and preferred coolant duct cross section is circular or oval.
Preferred coolant duct adopts single pipe bending or how to make with pipeline welding.
First precursor gases enters spray header by interface 206, then arrive the first precursor gases diffusion admittance 307a through 206a, 206b, after the distribution of gas diffusion paths, the first precursor gases enters the nozzle ejection be made up of gas passage 307b, 307c, 307d and enters in reaction chamber.Second precursor gases enters spray header by interface 202, enters the nozzle ejection be made up of gas passage 303a, 303b, 303c, 303d and enter in reaction chamber in the pre-distribution cavity 308 of the second precursor gases after being uniformly distributed.Cooling fluid accesses in coolant duct by coolant connection 211a, 213a, 217a, 218a, in spray header, leave spray header again after circulation by corresponding cooling liquid outlet.
Figure 8 shows that the present invention's another kind of embodiment pipeline subregion schematic diagram, coolant duct adopts the distribution form of annular subregion; Divided by spray header cooled region in order to interior A, middle B, outer C tri-regions, this partitioned mode enables spray header better coordinate with the heating unit being all annular subregion, provides favourable condition for forming homogeneous temperature field in reaction chamber inside.
According to the requirement of patent laws, what the present invention's embodiment was detailed describes invented concrete structure and the feature for the treatment of process thereof.But should be appreciated that described example just in order to better state structure of the present invention and feature, the present invention is not limited to the shown and characteristic that describes herein.Therefore, the present invention states herein, changes or be out of shape all to be included in the protection domain of appending claims the various forms of equalizations of enforcement of the present invention.
Claims (8)
1. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor, comprise the gas injection plate (210) being positioned at reaction chamber (103) top, this gas injection plate (210) top is provided with gas web plate (216), is provided with at least three stacked gas distribution grids (212,214,215) between described gas injection plate (210) and gas web plate (216), it is characterized in that, coolant duct is provided with between described gas injection plate (210) and the first gas distribution grid (212) and between the first gas distribution grid (212) and the second gas distribution grid (214), described first gas distribution grid (212) is positioned at the second gas distribution grid (214) below, gas injection plate (210) is positioned at the first gas distribution grid (212) below, and described first gas distribution grid (212) is undermost gas distribution grid, described gas web plate (216) is provided with some gas interfaces (202, 203, 206), survey meter install window (205) and with described coolant duct (211, 213, 217, 218) cooling fluid be communicated with imports and exports (201, 207), and described gas injection plate (210), gas distribution grid (212, 214, 215), some separate gas passage (303c are formed after gas web plate (216) is superimposed, 307c, 305c), this gas passage comprises the first precursor gases passage (307), second precursor gases passage (303) and carrier gas passage (305), the upper and lower side of the upper side of described gas injection plate (210), the downside of gas web plate (216) and each gas distribution grid (212,214,215) is equipped with two groove (308a for holding coolant duct (211,213,217,218), 301b, 302b), separated by slit (305e) between two grooves (308a), horizontally disposed in described groove (308a, 301b, 302b) interior coolant duct bending, described survey meter is installed in window (205) and is provided with the slit (305e) be communicated with gas interface, described gas web plate (216) and each gas distribution grid (212,214,215) are equipped with coolant duct installation through hole.
2. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 1, is characterized in that, described gas distribution grid (212,214,215) has three pieces.
3. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 1 and 2, it is characterized in that, the cross section of described groove (308a, 301b, 302b) is semicircle, semicircular string and described slit (305e) conllinear.
4. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 1 and 2, is characterized in that, the quantity of described coolant duct (211,213,217,218) is 1-16 root.
5. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 4, it is characterized in that, when coolant duct is many, many coolant ducts (211,213,217,218) are separate cooling channel.
6. according to claim 1 or 5 for the tube-cooled formula distribution device in gas-fluid of metal organic chemical vapor deposition reactor, it is characterized in that, the connection between described coolant duct and gas injection plate (210), gas web plate (216), gas distribution grid (212,214,215) adopts vacuum diffusion bonding to connect or vacuum fusion welding connects or is located by connecting with described groove.
7. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 1 and 2, is characterized in that, the cross section of described groove (308a, 301b, 302b) is half elliptic or Polygons.
8. the tube-cooled formula distribution device in gas-fluid for metal organic chemical vapor deposition reactor according to claim 1 and 2, is characterized in that, described survey meter is installed window (205) and is provided with chip warpage degree measuring sonde.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310233117.XA CN103334092B (en) | 2013-06-13 | 2013-06-13 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
| PCT/CN2014/072685 WO2014198134A1 (en) | 2013-06-13 | 2014-02-28 | Pipeline-cooling gas distribution device for metal organic chemical vapour deposition reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310233117.XA CN103334092B (en) | 2013-06-13 | 2013-06-13 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
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| Publication Number | Publication Date |
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| CN103334092A CN103334092A (en) | 2013-10-02 |
| CN103334092B true CN103334092B (en) | 2015-04-22 |
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| CN103334092B (en) * | 2013-06-13 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
| CN103590019A (en) * | 2013-10-31 | 2014-02-19 | 沈阳拓荆科技有限公司 | Multi-gas independent channel spraying method combining stereo partitioning and plane partitioning |
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| CN203360572U (en) * | 2013-06-13 | 2013-12-25 | 中国电子科技集团公司第四十八研究所 | Pipeline cooling type gas distribution device used for metal organic chemical vapor deposition reactor |
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2013
- 2013-06-13 CN CN201310233117.XA patent/CN103334092B/en active Active
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2014
- 2014-02-28 WO PCT/CN2014/072685 patent/WO2014198134A1/en active Application Filing
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| Publication number | Publication date |
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| CN103334092A (en) | 2013-10-02 |
| WO2014198134A1 (en) | 2014-12-18 |
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