CN103305905B - A kind of monocrystalline silicon growing method becoming crucible ratio - Google Patents
A kind of monocrystalline silicon growing method becoming crucible ratio Download PDFInfo
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- CN103305905B CN103305905B CN201310211852.0A CN201310211852A CN103305905B CN 103305905 B CN103305905 B CN 103305905B CN 201310211852 A CN201310211852 A CN 201310211852A CN 103305905 B CN103305905 B CN 103305905B
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Abstract
The invention discloses a kind of monocrystalline silicon growing method becoming crucible ratio, silicon single crystal grows in crucible, enters after isodiametric growth until silicon single crystal, and adjustment crucible crucible, than constantly increasing, carries out change crucible and compares monocrystalline silicon growing.The present invention slowly can improve monocrystalline interface growth liquid level by becoming crucible ratio, effectively accelerates melt thermal natural convection, keeps oxygen level concentration in melt, effectively improves the axial oxygen level consistence of silicon single crystal, easy to operate, is applicable to suitability for industrialized production.
Description
Technical field
The present invention relates to monocrystalline silicon piece processing and manufacturing field, particularly a kind of monocrystalline silicon growing method.
Background technology
Modelling of Crystal Growth in CZ-Si Pulling method is also known as Czochralski method, be called for short CZ method, that highly purified polysilicon is placed in quartz crucible, heat makes it melt, recycling seed crystal and rotary pulling method, by seeding, shouldering, turns the steps such as shoulder, isometrical, ending and is progressively grown out by silicon single crystal.Because employ quartz crucible in process, at high temperature quartz crucible and molten silicon contact reacts: Si+SiO
2=2SiO, the SiO of generation enters into molten silicon.Unavoidably oxygen impurities is introduced in crystal growing process.
Oxygen impurities in silicon is easily reunited, and forms oxygen precipitation, brings out dislocation, the secondary defects such as fault, extreme influence device performance under high temperature, in the application of therefore semiconductor material in early days, it is believed that oxygen is only detrimental impurity, makes great efforts to reduce the oxygen level in silicon single crystal.But along with technical progress and research are goed deep into, impurity oxygen has the effect of intrinsic gettering after reuniting, can Adsorption of Heavy Metal Ions, microdefect etc., thus greatly reduce the impurity of device process introducing and the microdefect density of crystal growing process, the impurity and the defect that decrease device active region are polluted, and improve device performance.Impurity oxygen not only has the intrinsic gettering ability of silicon chip, also has good dislocation locking effect simultaneously, greatly can improve the physical strength of silicon chip.
For general silicon single crystal, oxygen level is generally that head height tail is low, and progressively decline distribution.Too high oxygen level then easily brings out secondary defect, and the effect of oxygen concn too low then intrinsic gettering is not obvious.The silicon chip of different oxygen concentrations in making devices process because intrinsic gettering effect and the inconsistent device property that causes of induced defect situation have certain otherness, affect element manufacturing to shelves and consistence.Therefore the monocrystalline silicon piece that axial oxygen level consistence is stronger can effectively improve device consistence.
Summary of the invention
Technical problem to be solved by this invention is just to provide a kind of monocrystalline silicon growing method, effectively improves the axial oxygen level consistence of silicon single crystal.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of monocrystalline silicon growing method becoming crucible ratio, and silicon single crystal grows in crucible, it is characterized in that: enter after isodiametric growth until silicon single crystal, adjustment crucible crucible, than constantly increasing, carries out change crucible and compares monocrystalline silicon growing.
Preferably, in monocrystalline silicon growing process, silicon single crystal length percent with crucible than the pass increasing per-cent is:
Silicon single crystal length percent crucible is than increasing per-cent
Preferably, in monocrystalline silicon growing process, select high-purity argon gas as shielding gas, high-purity argon gas flow is 20 ~ 120slpm.
Preferably, in monocrystalline silicon growing process, crystal rotation is 10 ~ 25rpm.
Preferably, in monocrystalline silicon growing process, crucible rotation is 4 ~ 12rpm.
Crucible described above, than for crucible climbing speed is than the upper crystal rate of pulling, is called for short crucible ratio.The present invention slowly can improve monocrystalline interface growth liquid level by becoming crucible ratio, effectively accelerates melt thermal natural convection, keeps oxygen level concentration in melt, effectively improves the axial oxygen level consistence of silicon single crystal, easy to operate, is applicable to suitability for industrialized production.
Advantage of the present invention:
1, the present invention adopts the method for monocrystal growth becoming crucible ratio, and operation realizes simple;
2, the present invention and actual production compatibility by force, are easy to industrialization;
3, the axial good uniformity of the monocrystalline of the present invention's growth, (Oimax-Oimin)/Oimax<8%.
Embodiment
Below in conjunction with specific embodiment, the present invention will be further described.
Embodiment 1:
Adopt CG6000 type single crystal growing furnace, 16 cun of thermal fields, polycrystalline feeds intake 25kg, and drawn monocrystalline silicon head target resistivity 35 ohmcm, silicon single crystal model N-type, silicon single crystal size is 4 cun.Adopt constant voltage 40torr, argon flow amount 40slpm, crucible rotation 5rpm, crystal rotation 12rpm.
Concrete steps are as follows:
(1) clean thermal field, single crystal growing furnace, quartz crucible;
(2) polycrystalline and doping agent are carefully put into quartz crucible;
(3) close single crystal growing furnace, repeatedly rinse single crystal growing furnace with argon gas and vacuumize, inspection vacuum leak rate;
(4) open argon flow amount, heater is heated, melting polycrystalline silicon;
(5) treat that polycrystalline melts completely, lower heater power, keep Melt molten state 1450 degrees Celsius;
(6) seeding, shouldering, turn shoulder, isometrical, ending is carried out according to setting technique;
(7) after ending, crystal is so that the rotation of 150mm/h speed to be carried, and cooling time is 4 hours.
In step (6), crucible is as follows than changing conditions:
| Monocrystalline length (mm) | Crucible ratio |
| 0 | 0.067 |
| 200 | 0.071 |
| 400 | 0.074 |
| 600 | 0.080 |
| 800 | 0.093 |
| 967 | 0.117 |
Get 2mm print carry out oxygen level test at the head of monocrystalline, middle part, afterbody respectively, test value is respectively: 28.32ppma, 28.54ppma, 27.13ppma.Axial homogeneity=(the 28.54-27.13)/28.54=4.9% of oxygen level.
Embodiment 2:
Adopt CG6000 type single crystal growing furnace, 16 cun of thermal fields, polycrystalline feeds intake 30kg, and drawn monocrystalline silicon head target resistivity 50 ohmcm, silicon single crystal model N-type, silicon single crystal size is 5 cun.Adopt constant voltage 35torr, argon flow amount 50slpm, crucible rotation 6rpm, crystal rotation 14rpm.
Concrete steps are as follows:
(1) clean thermal field, single crystal growing furnace, quartz crucible;
(2) polycrystalline and doping agent are carefully put into quartz crucible;
(3) close single crystal growing furnace, repeatedly rinse single crystal growing furnace with argon gas and vacuumize, inspection vacuum leak rate;
(4) open argon flow amount, heater is heated, melting polycrystalline silicon;
(5) treat that polycrystalline melts completely, lower heater power, keep Melt molten state 1450 degrees Celsius;
(6) seeding, shouldering, turn shoulder, isometrical, ending is carried out according to setting technique;
(7) after ending, crystal is so that the rotation of 150mm/h speed to be carried, and cooling time is 4.5 hours.
In step (6), crucible is as follows than changing conditions:
| Monocrystalline length (mm) | Crucible ratio |
| 0 | 0.105 |
| 150 | 0.111 |
| 300 | 0.117 |
| 450 | 0.126 |
| 600 | 0.148 |
| 785 | 0.186 |
Get 2mm print carry out oxygen level test at the head of monocrystalline, middle part, afterbody respectively, test value is respectively: 30.50ppma, 30.00ppma, 29.87ppma.The axial homogeneity of oxygen level is (30.5-29.87)/30.5=2.6%.
Claims (4)
1. one kind becomes the monocrystalline silicon growing method of crucible ratio, silicon single crystal grows in crucible, it is characterized in that: enter after isodiametric growth until silicon single crystal, adjustment crucible crucible is than constantly increasing, carry out change crucible and compare monocrystalline silicon growing, in silicon single crystal isodiametric growth process, silicon single crystal length percent with crucible than the pass increasing per-cent is:
Silicon single crystal length percent crucible is than increasing per-cent
0% 0%
20% 5%
40% 10%
60% 20%
80% 40%
100% 80%。
2. the monocrystalline silicon growing method of change crucible ratio according to claim 1, is characterized in that: in silicon single crystal isodiametric growth process, and select high-purity argon gas as shielding gas, high-purity argon gas flow is 20 ~ 120slpm.
3. the monocrystalline silicon growing method of change crucible ratio according to claim 1, it is characterized in that: in silicon single crystal isodiametric growth process, crystal rotation is 10 ~ 25rpm.
4. the monocrystalline silicon growing method of change crucible ratio according to claim 2, it is characterized in that: in silicon single crystal isodiametric growth process, crucible rotation is 4 ~ 12rpm.
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| CN109576785A (en) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | The method of oxygen content during adjusting monocrystalline silicon growing |
| CN113355737B (en) * | 2021-06-02 | 2022-08-30 | 内蒙古和光新能源有限公司 | Preparation method of square silicon core |
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