CN103241701B - 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method - Google Patents
3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method Download PDFInfo
- Publication number
- CN103241701B CN103241701B CN201210023814.8A CN201210023814A CN103241701B CN 103241701 B CN103241701 B CN 103241701B CN 201210023814 A CN201210023814 A CN 201210023814A CN 103241701 B CN103241701 B CN 103241701B
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- silicon substrate
- actuator
- locating platform
- dof
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention relates to 3-DOF silicon-base plane locating platform in parallel and the preparation method of band displacement self-checking function, this locating platform comprises monocrystalline silicon substrate and glass substrate, monocrystalline silicon substrate is provided with objective table, static broach actuator, detect beam, folded beam, flexible support beam and flexible hinge, objective table be positioned at monocrystalline silicon substrate central authorities and can three-degree-of-freedom motion, objective table connects flexible support beam successively by flexible hinge, folded beam, static broach actuator and detection beam, detect on beam and be integrated with displacement detecting sensor, glass substrate is provided with the actuator drive electrode be connected with static broach actuator, objective table on monocrystalline silicon substrate, static broach actuator, detect beam, folded beam, flexible support beam and flexible hinge adopt bulk silicon technological to be processed to form at same silicon on-chip all-in-one.Compared with prior art, structure set of the present invention, driving and displacement detecting can realize the real-time detection and control of each direction of motion displacement in one, and positioning precision is high.
Description
Technical field
What the present invention relates to is a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method, specifically a kind of silica-based locating platform of 3-DOF adopting side direction translation static broach to drive, the translation of X and Y-direction and the rotation along Z axis can be realized, and the displacement detecting sensor be integrated with on the platform based on piezoresistive detection technology, the real-time detection and control to each direction of motion displacement can be realized.
Background technology
Jiggle robot, as an important component part of micro OS, has broad application prospects in fields such as precision optical machinery engineering, pH effect, fiber operating, data storing, bioengineering.In recent years, constantly perfect due to micro-nano technology technology, deep reaction ion etching (DRIE) technology increasingly mature, used the micro-constant bit platform of bulk silicon micro mechanic fabrication techniques to receive the concern of people.The continuous progress of simultaneous micro-nano operating technology, operand is towards miniaturized, microminiaturized future development, these all require that power tool should have sufficiently high positioning precision, and therefore the position-force control of locating platform will be a very important development trend.
Little owing to there is overall structure size based on the locating platform of silicon micro-machining technology, the features such as integrated stress sensitive resistance-type displacement detecting sensor is difficult, up to the present, on locating platform, the report of integrated stress sensitive resistance-type displacement detecting sensor is few.The people such as Wang Jia farmland proposed the nano-scale localization platform that a kind of integrated displacement detects in 2008, by being integrated with the displacement detecting sensor of sidewall stress sensitive resistance composition on static broach actuator, thus achieve the real-time control [L.N.Sun of the output displacement to objective table, J.C.Wang, W.B.Rong, et al.A Silicon Integrated Micro Nano-Posistioning XY-stage forNano-manipulation J.Micromech.Microeng., vol.18, no.12, pp.1 ~ 9, 2008.], but, its locating platform is a kind of 2-DOF locating platform, it can only realize the translation function of X and Y aspect, can not realize rotating, therefore as greatly limit its range of application in power tool.The people such as Bonjin Koo are recently proposed a kind of 2-DOF silicon-base plane locating platform [B.J.Koo in parallel with position-force control, X.M.Zhang, J.Y. Dong, et al.A 2Degree-of-Freedom SOI-MEMS Translation Stage WithClosed-Loop Positioning J.Microelectromech.Syst., vol.21, no.1, pp.1 ~ 9, 2012.], this kind of locating platform also can only realize the translation in X and Y-direction, and employing differential capacitance detection mode realizes the real-time detection function to platform output displacement, relative to for piezoresistive detection technology, capacitance detecting due to the variable quantity of its Detection capacitance all very little, mostly at picofarad range, and there is larger parasitic capacitance in locating platform itself, these increase the complex process degree of subsequent detection circuit all greatly.In addition, this locating platform adopts SOI monocrystalline silicon piece to make, and considerably increases the cost of manufacture of platform, is unfavorable for batch making.
Summary of the invention
Object of the present invention is exactly provide a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method to overcome defect that above-mentioned prior art exists, the locating platform structure set provided, driving and displacement detecting are in one, the translation of X-direction and Y-direction and the rotation around Z axis can be realized, real-time detection function can be carried out to each moving displacement simultaneously, thus further increase platform positioning precision.
Object of the present invention can be achieved through the following technical solutions:
A kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel, comprise monocrystalline silicon substrate and glass substrate, described monocrystalline silicon substrate is located at above glass substrate, monocrystalline silicon substrate is provided with objective table, static broach actuator, detect beam, folded beam, flexible support beam, flexible hinge and detecting sensor, described objective table be positioned at monocrystalline silicon substrate central authorities and can three-degree-of-freedom motion, objective table connects flexible support beam successively by flexible hinge, folded beam, static broach actuator and detection beam, described detection beam is integrated with displacement detecting sensor, described glass substrate is provided with the actuator drive electrode be connected with static broach actuator.
Described objective table is isosceles triangular structure, and each drift angle place of isosceles triangular structure all connects flexible support beam, folded beam, static broach actuator successively by flexible hinge and detects beam formation y-type structure.
Described displacement monitoring sensor comprises two outer meeting resistances and two stress piezo-resistances be located on detection beam, two described outer meeting resistances and two stress piezo-resistances composition half-bridge testing circuits.
Two described stress piezo-resistances adopt the mode of ion implantation to be arranged on the upper surface detecting beam two ends.
Two described stress piezo-resistances are provided with lead-in wire and pad, and described lead-in wire and pad are fixed on monocrystalline silicon substrate upper surface.
Described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of (111) crystal face.
Objective table on described monocrystalline silicon substrate, static broach actuator, detection beam, folded beam, flexible support beam, flexible hinge and detecting sensor adopt bulk silicon technological integration on same monocrystalline silicon substrate to be processed to form.
Described flexible hinge is circular arc flexible hinge.
Described static broach actuator is push-pull side direction translation static broach actuator.
A preparation method for 3-DOF silicon-base plane for above-mentioned band displacement self-checking function locating platform in parallel, comprises the following steps:
1) the twin polishing monocrystalline silicon substrate of (111) crystal face is adopted, monocrystalline silicon substrate thickness gets 350 μm, electrical resistivity range gets 1 Ω cm ~ 12 Ω cm, by the mode of carrying out boron ion implantation to this monocrystalline silicon substrate, stress sensitive resistance is set, inject inclination angle and get 7 ° ~ 12 °, the resistance value of stress sensitive resistance is 82 ~ 90 ohm;
2) make the fairlead of stress sensitive resistance, then sputtered aluminum film forms lead-in wire and pad at monocrystalline silicon substrate upper surface;
3) monocrystalline silicon substrate lower surface resist coating make static broach actuator, folded beam, flexible support beam, objective table, the movable structural region of detection beam and the electrostatic actuator lead-in wire electrode cabling band of position by lithography, then utilize silicon deep reaction ion etch process to etch described movable structural region and the cabling band of position, etching depth is 300 μm;
4) get a glass substrate, at one of them sputtered aluminum film on the surface of glass substrate, photoetching after resist coating also makes the lead-in wire electrode forming static broach actuator;
5) lower surface of monocrystalline silicon substrate is connected by silicon-glass anodic bonding mode with the face, lead-in wire electrode place of glass substrate;
6) figure of movable structure is made by lithography at monocrystalline silicon substrate upper surface resist coating; then adopting reactive ion etching process to etch away the passivation protection layer of the graphics field of movable structure, etching the movable structure of release utilizing silicon deep reaction ion etch process.
Compared with prior art, the invention provides a kind of based on bulk micromachining, structure set, driving and displacement detecting are in one, there is the silicon-base plane nano-scale localization platform in parallel of Three Degree Of Freedom, can realize the real-time detection and control to each direction of motion displacement, thus further increase the positioning precision of locating platform, and it is little to have physical dimension, cost of manufacture is low, and positioning precision is high and can the capable advantage such as to monitor in real time of contraposition shift-in.
Accompanying drawing explanation
Fig. 1 is the structural representation of the 3-DOF silicon-base plane locating platform in parallel of band displacement self-checking function in embodiment;
Fig. 2 is the 3-DOF silicon-base plane locating platform partial structurtes in parallel schematic diagram of the band displacement self-checking function in embodiment;
Fig. 3 is the 3-DOF silicon-base plane locating platform cross section structure in parallel schematic diagram of the band displacement self-checking function in embodiment;
Fig. 4 is flexible support beam and the flexible hinge place partial structurtes schematic diagram of the 3-DOF silicon-base plane locating platform in parallel of band displacement self-checking function in embodiment;
Fig. 5 be the 3-DOF silicon-base plane locating platform in parallel of band displacement self-checking function in embodiment detection beam, detect the partial structurtes schematic diagram at pressure drag and static broach actuator place.
Fig. 6 is the schematic diagram of each step of preparation method of the 3-DOF silicon-base plane locating platform in parallel of band displacement self-checking function in embodiment; Wherein: (a) is N-type (111) crystal face monocrystalline silicon substrate; B () makes stress sensitive resistance; C () makes stress sensitive resistance lead hole and lead-in wire; D () monocrystalline silicon substrate lower surface etches movable structure and drive electrode routing interconnect groove; E () glass substrate bonding face makes electrostatic actuator drive electrode and lead-in wire; (f) monocrystalline silicon substrate and glass substrate bonding; G () silicon chip upper surface discharges movable structure.
In figure, 1 is glass substrate, and 2 is monocrystalline silicon substrate, and 3 for detecting beam, the lead-in wire of 4 stress piezo-resistances and pad, 5 is actuator drive electrode, and 6 is folded beam, and 7 is objective table, 8 static broach actuators, 9 is flexible support beam, and 10 is flexible hinge, and 11 is the pressure-sensitive pressure drag of stress.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment
As shown in Fig. 1 ~ 5, a kind of 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel, comprise monocrystalline silicon substrate 2 and glass substrate 1, monocrystalline silicon substrate 2 is located at above glass substrate 1, monocrystalline silicon substrate 2 is provided with objective table 7, static broach actuator 8, detect beam 3, folded beam 6, flexible support beam 9 and flexible hinge 10, objective table 7 be positioned at monocrystalline silicon substrate 2 central authorities and can three-degree-of-freedom motion, objective table 7 is in isosceles triangular structure, each drift angle place of isosceles triangular structure all connects flexible support beam 9 successively by flexible hinge 10, folded beam 6, static broach actuator 8 and detection beam 3, form y-type structure.Article carrying platform 7 can be realized along X and the translation of Y-direction and the rotation around Z axis by the output controlling three static broach actuators 8, and objective table 7 output displacement realizes real-time self-checking function by displacement transducer, thus further increasing the positioning precision of objective table 7, glass substrate 1 is provided with the actuator drive electrode 5 be connected with static broach actuator 8.
Each detection beam 3 connects equal displacement detecting sensor, each displacement detecting sensor comprises two outer meeting resistances and two stress piezo-resistances 11 be located on detection beam 3, two outer meeting resistances and two stress piezo-resistances 11 form half-bridge testing circuit, two stress piezo-resistances 11 adopt the mode of ion implantation to be integrated in the upper surface detecting beam 3 two ends, and the lead-in wire of the pressure-sensitive electricity of stress and pad 4 are fixed on the upper surface of monocrystalline silicon substrate 2.
Monocrystalline silicon substrate 2 adopts the monocrystalline silicon substrate of N-type (111) crystal face, objective table 7 on this monocrystalline silicon substrate 2, static broach actuator 8, detect beam 3, folded beam 6, flexible support beam 9, flexible hinge 10 and stress sensitive resistance 11 adopt bulk silicon technological to be processed to form at same silicon on-chip all-in-one, flexible hinge 10 is circular arc flexible hinge, its basic feature is that to cut part edge be circular arc to matrix, the link of flexible support beam 9 and objective table 7 is realized by flexible hinge 10, realize translation and the rotating function of objective table 7, static broach actuator 8 is push-pull side direction translation static broach actuator.
A preparation method for 3-DOF silicon-base plane for above-mentioned band displacement self-checking function locating platform in parallel, schematic diagram when it carries out each step as shown in Figure 6, comprises the following steps:
The twin polishing monocrystalline silicon substrate of step one, employing (111) crystal face as shown in Fig. 6 (a), monocrystalline silicon substrate thickness gets 350 μm, electrical resistivity range gets 1 Ω cm ~ 12 Ω cm, by the mode of carrying out boron ion implantation to this monocrystalline silicon substrate, stress sensitive resistance is set, inject inclination angle and get 7 ° ~ 12 °, the resistance value of stress sensitive resistance is 82 ~ 90 ohm, as shown in Fig. 6 (b).
The fairlead of step 2, making stress sensitive resistance, then sputtered aluminum film forms lead-in wire and pad, as shown in Fig. 6 (c) at monocrystalline silicon substrate upper surface.
Step 3, monocrystalline silicon substrate lower surface resist coating make static broach actuator, folded beam, flexible support beam, objective table, the movable structural region of detection beam and the electrostatic actuator lead-in wire electrode cabling band of position by lithography, then silicon deep reaction ion etch process is utilized to etch described movable structural region and the cabling band of position, etching depth is 300 μm, as shown in Fig. 6 (d).
Step 4, get a glass substrate, at one of them sputtered aluminum film on the surface of glass substrate, photoetching after resist coating also makes the lead-in wire electrode forming static broach actuator, as shown in Fig. 6 (e).
Step 5, the lower surface of monocrystalline silicon substrate to be connected, as shown in Fig. 6 (f) by silicon-glass anodic bonding mode with the face, lead-in wire electrode place of glass substrate.
Step 6, make the figure of movable structure by lithography at monocrystalline silicon substrate upper surface resist coating; then reactive ion etching process is adopted to etch away the passivation protection layer of the graphics field of movable structure; the movable structure of release is etched, as shown in Fig. 6 (g) utilizing silicon deep reaction ion etch process.
Claims (7)
1. the locating platform in parallel of the 3-DOF silicon-base plane with displacement self-checking function, it is characterized in that, comprise monocrystalline silicon substrate and glass substrate, described monocrystalline silicon substrate is located at above glass substrate, monocrystalline silicon substrate is provided with objective table, static broach actuator, detect beam, folded beam, flexible support beam and flexible hinge, described objective table be positioned at monocrystalline silicon substrate central authorities and can three-degree-of-freedom motion, objective table connects flexible support beam successively by flexible hinge, folded beam, static broach actuator and detection beam, described detection beam is integrated with displacement detecting sensor, described glass substrate is provided with the actuator drive electrode be connected with static broach actuator,
Described monocrystalline silicon substrate adopts the monocrystalline silicon substrate of (111) crystal face;
Described static broach actuator is push-pull side direction translation static broach actuator;
Described displacement detecting sensor comprises two outer meeting resistances and two stress piezo-resistances be located on detection beam, two described outer meeting resistances and two stress piezo-resistances composition half-bridge testing circuits.
2. a kind of 3-DOF silicon-base plane with displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, described objective table is isosceles triangular structure, and each drift angle place of isosceles triangular structure all connects flexible support beam, folded beam, static broach actuator successively by flexible hinge and detects beam formation y-type structure.
3. a kind of 3-DOF silicon-base plane with displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, two described stress piezo-resistances adopt the mode of ion implantation to be arranged on the upper surface detecting beam two ends.
4. a kind of 3-DOF silicon-base plane with displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, two described stress piezo-resistances are provided with lead-in wire and pad, and described lead-in wire and pad are fixed on monocrystalline silicon substrate upper surface.
5. a kind of 3-DOF silicon-base plane with displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, the objective table on described monocrystalline silicon substrate, static broach actuator, detection beam, folded beam, flexible support beam, flexible hinge and detecting sensor adopt bulk silicon technological integration on same monocrystalline silicon substrate to be processed to form.
6. a kind of 3-DOF silicon-base plane with displacement self-checking function according to claim 1 locating platform in parallel, it is characterized in that, described flexible hinge is circular arc flexible hinge.
7. a preparation method for the 3-DOF silicon-base plane locating platform in parallel of band displacement self-checking function as claimed in claim 1, is characterized in that, comprise the following steps:
1) the twin polishing monocrystalline silicon substrate of (111) crystal face is adopted, monocrystalline silicon substrate thickness gets 350 μm, electrical resistivity range gets 1 Ω cm ~ 12 Ω cm, by the mode of carrying out boron ion implantation to this monocrystalline silicon substrate, stress sensitive resistance is set, inject inclination angle and get 7 ° ~ 12 °, the resistance value of stress sensitive resistance is 82 ~ 90 ohm;
2) make the fairlead of stress sensitive resistance, then sputtered aluminum film forms lead-in wire and pad at monocrystalline silicon substrate upper surface;
3) monocrystalline silicon substrate lower surface resist coating make static broach actuator, folded beam, flexible support beam, objective table, the movable structural region of detection beam and the electrostatic actuator lead-in wire electrode cabling band of position by lithography, then utilize silicon deep reaction ion etch process to etch described movable structural region and the cabling band of position, etching depth is 300 μm;
4) get a glass substrate, at one of them sputtered aluminum film on the surface of glass substrate, photoetching after resist coating also makes the lead-in wire electrode forming static broach actuator;
5) lower surface of monocrystalline silicon substrate is connected by silicon-glass anodic bonding mode with the face, lead-in wire electrode place of glass substrate;
6) figure of movable structure is made by lithography at monocrystalline silicon substrate upper surface resist coating; then reactive ion etching process is adopted to etch away the passivation protection layer of the graphics field of movable structure, the movable structure of recycling silicon deep reaction ion etch process etching release.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210023814.8A CN103241701B (en) | 2012-02-03 | 2012-02-03 | 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210023814.8A CN103241701B (en) | 2012-02-03 | 2012-02-03 | 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103241701A CN103241701A (en) | 2013-08-14 |
| CN103241701B true CN103241701B (en) | 2015-10-14 |
Family
ID=48921618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210023814.8A Expired - Fee Related CN103241701B (en) | 2012-02-03 | 2012-02-03 | 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103241701B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104016297B (en) * | 2014-06-20 | 2016-04-27 | 上海工程技术大学 | A kind of 3-DOF silicon-based nano level locating platform and preparation method thereof |
| EP3718960B1 (en) | 2014-12-10 | 2023-10-25 | Paul D. Okulov | Structural health and usage monitoring system |
| EP3687271A1 (en) * | 2019-01-25 | 2020-07-29 | Mycronic AB | Eletrical verification of electronic components |
| CN110078014B (en) * | 2019-04-19 | 2022-02-22 | 西安交通大学 | MEMS microgravity sensor chip with quasi-zero rigidity characteristic based on electrostatic preloading |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393913B1 (en) * | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
| CN101241314A (en) * | 2008-03-11 | 2008-08-13 | 上海微电子装备有限公司 | 6 freedom degree precision positioning station capable of compensating Z-direction position |
| CN101372310A (en) * | 2008-07-09 | 2009-02-25 | 哈尔滨工业大学 | Nano-scale localization platform based on bulk silicon process and method for processing vertical sidewall surface piezoresistance thereof |
| CN101776851A (en) * | 2010-01-15 | 2010-07-14 | 天津大学 | Three DOF micro-positioning workbench for nano-imprint lithography system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10108198A1 (en) * | 2001-02-21 | 2002-09-12 | Bosch Gmbh Robert | Yaw rate sensor |
| WO2002088631A2 (en) * | 2001-05-02 | 2002-11-07 | The Regents Of The University Of California | Non-resonant four degrees-of-freedom micromachined gyroscope |
-
2012
- 2012-02-03 CN CN201210023814.8A patent/CN103241701B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6393913B1 (en) * | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
| CN101241314A (en) * | 2008-03-11 | 2008-08-13 | 上海微电子装备有限公司 | 6 freedom degree precision positioning station capable of compensating Z-direction position |
| CN101372310A (en) * | 2008-07-09 | 2009-02-25 | 哈尔滨工业大学 | Nano-scale localization platform based on bulk silicon process and method for processing vertical sidewall surface piezoresistance thereof |
| CN101776851A (en) * | 2010-01-15 | 2010-07-14 | 天津大学 | Three DOF micro-positioning workbench for nano-imprint lithography system |
Non-Patent Citations (2)
| Title |
|---|
| "Design and Fabrication of a Planar Three-DOFs MEMS-Based Manipulator";Boudewijn R. de Jong et al.;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20101031;第19卷(第5期);第1117-1119，1123-1124页 * |
| "硅基集成式微型平面纳米级定位系统的研究";王家畴;《中国博士学位论文全文数据库》;20100215;第73-76页，图4-5 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103241701A (en) | 2013-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102183677B (en) | Integrated inertial sensor and pressure sensor and forming method thereof | |
| US7578189B1 (en) | Three-axis accelerometers | |
| CN103241701B (en) | 3-DOF silicon-base plane with displacement self-checking function locating platform in parallel and preparation method | |
| CN102768290B (en) | MEMS (micro-electrochemical systems) accelerometer and production method thereof | |
| CN109485011B (en) | MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process | |
| CN110631568B (en) | Novel MOEMS (metal oxide semiconductor energy management system) double-shaft gyroscope based on two-dimensional photonic crystal cavity structure and processing method thereof | |
| CN104649217B (en) | A kind of single-chip processing method of MEMS sensor | |
| CN105181189B (en) | Silicon nanowire pressure sensor and its encapsulating structure based on huge piezoresistive characteristic | |
| CN104197921B (en) | Pattern-transferred embossed miniature hemispherical resonant gyroscope and manufacturing method thereof | |
| Hata et al. | Integrated 3-axis tactile sensor using quad-seesaw-electrode structure on platform LSI with through silicon vias | |
| Makihata et al. | Integration and packaging technology of MEMS-on-CMOS capacitive tactile sensor for robot application using thick BCB isolation layer and backside-grooved electrical connection | |
| CN104793015A (en) | Single-silicon-wafer compound sensor structure with pressure sensor embedded in accelerometer and manufacturing method | |
| CN104045049A (en) | Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology | |
| CN104576482A (en) | Wafer alignment method | |
| CN114323395B (en) | MEMS six-axis force sensor chip based on SOI technology and preparation method thereof | |
| CN109856425B (en) | Monolithic integrated triaxial acceleration sensor and manufacturing process thereof | |
| CN104249992B (en) | Alignment methods between wafer and wafer | |
| CN205342595U (en) | A tool equipment for towards micro -structure ultra -precise machining | |
| CN108117034A (en) | MEMS component and its manufacturing method | |
| CN106405151A (en) | Method for preparing low stress Z-axis accelerometer | |
| CN101417785A (en) | Wafer-level sensing element packaging structure and method for producing the same | |
| CN201456002U (en) | Adsorbing disk | |
| Hata et al. | An SOI tactile sensor with a quad seesaw electrode for 3-axis complete differential detection | |
| CN101372310A (en) | Nano-scale localization platform based on bulk silicon process and method for processing vertical sidewall surface piezoresistance thereof | |
| CN104016297B (en) | A kind of 3-DOF silicon-based nano level locating platform and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151014 Termination date: 20210203 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |