CN103247746A - Method and apparatus for light source - Google Patents
Method and apparatus for light source Download PDFInfo
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- CN103247746A CN103247746A CN2013100427888A CN201310042788A CN103247746A CN 103247746 A CN103247746 A CN 103247746A CN 2013100427888 A CN2013100427888 A CN 2013100427888A CN 201310042788 A CN201310042788 A CN 201310042788A CN 103247746 A CN103247746 A CN 103247746A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention relates to a method and an apparatus for a light source. A light-emitting device and a method for manufacturing the device are disclosed. In one embodiment, an optical coupling layer can formed on a substrate encapsulating a light source die. An encapsulation layer can be formed on the optical coupling layer. A top portion of the encapsulation layer can be flat and the encapsulation can comprise a high density layer and a low density layer. The high density layer can comprise wavelength-converting material precipitated on one side of the encapsulation layer. The low density layer can comprise the wavelength-converting material in particle form suspended within the encapsulation layer. In another embodiment, the method for making the light-emitting device is disclosed.
Description
This case is the part of the 13/048th, No. 136 U. S. application case of on March 15th, the 2011 application application case that continues, and described U. S. application case is incorporated herein by reference.
Technical field
The present invention relates to light-emitting device.
Background technology
One of current most popular light-emitting device of light-emitting diode (hereinafter being called LED) expression.Owing to small-shape factor and low power consumption, LED is widely used in the electronic mobile apparatus as indicator light, is used for LCD or the light source of LCD and the photoflash lamp of camera phone, digital camera and video recording apparatus.Compare with employed xenon flash lamp in most of cameras, LED is being superior aspect size and the power consumption.For instance, the LED in the flash application can have the thickness of 0.6mm, and xenon flash lamp has the thickness of 1.3mm.Small-shape factor make LED be suitable for having integral thickness can mobile phase machine or mobile phone less than the camera components of 5mm in.In addition, be different from xenon flash lamp, LED did not need the charging interval before using.
In general, most of light-emitting devices are not for single application, but are used for a plurality of application.Employed light-emitting device is generally high power and high output light source in the photoflash lamp.Therefore, other of employed light-emitting device is fit to be applied as high power applications in the photoflash lamp, for example employed light source in employed light source or the Infotainment display in indicator light, the illuminating equipment.The electronic information entertainment display system is generally extensive display system, and it can be in stadium, discotheque, electronic traffic mark display and finds in the Infotainment bulletin board of road and road along the street.Electronic information amusement display can be configured to show text, figure, image or the video that contains information or entertainment content.
Current employed most of photoflash lamps are white light source.Yet the scope that the light that the light source nude film among most of LED produces is substantially peak wavelength is the narrow band light from the ultraviolet ray to the green wavelength.Then usually by means of material for transformation of wave length the output of light source nude film is converted to wide-spectrum white-light.An example of material for transformation of wave length is phosphor.Material for transformation of wave length may absorb a part of light, thereby causes the light loss consumption.The light of institute's loss is few usually, but may be comparatively remarkable under the thicker situation of material for transformation of wave length.
Have some design considerations when the design light-emitting device, for example viewing angle, color dot, heat radiation, power consumption and form factor are only lifted several examples.In general, pay the utmost attention to design consideration in the main application during light-emitting device in design.For instance, be that the light-emitting device of target tends to have small-shape factor and has high light output with the flash application in the camera apparatus.Yet light-emitting device can usually be used outside target is mainly used.
Summary of the invention
One embodiment of the present of invention relate to a kind of light-emitting device.Described device comprises: substrate, and it has top surface; The light source nude film, it is attached to described top surface; Optically coupled layers, it roughly seals described light source nude film; Encapsulated layer, it is formed on the described optically coupled layers, and wherein said encapsulated layer further comprises low-density layer and high-density layer; And material for transformation of wave length, it is formed in the described encapsulated layer; Wherein said material for transformation of wave length is suspended in the described low-density layer with particulate forms; And wherein said material for transformation of wave length is deposited on the side of encapsulated layer, thereby defines described high-density layer.
Another embodiment of the present invention relates to a kind of for the method for making a plurality of light-emitting devices.Described method comprises: with a plurality of light source die attached on substrate; The cast component that will have at least one die cavity is aimed at described substrate, makes described light source nude film be enclosed in described at least one die cavity; Transparent encapsulation object is assigned in described at least one die cavity of sealing described light source nude film; Described transparent encapsulation object is cured as solid form to form optically coupled layers; Be pre-mixed the encapsulation object with material for transformation of wave length that is liquid form; Described encapsulation object is assigned in described at least one die cavity to form encapsulated layer; Allow described material for transformation of wave length precipitation, thereby form high-density layer and low-density layer in the described encapsulated layer thereon, wherein said high-density layer comprises the described material for transformation of wave length and the described low-density layer that are deposited on the side and comprises the described material for transformation of wave length that suspends with particulate forms; Make described encapsulated layer be cured as solid form; Remove described cast component; And isolate each indivedual light-emitting device.
Another embodiment of the present invention relates to a kind of light source encapsulation.Described light source encapsulation comprises: a plurality of conductors; At least one light source nude film, it is attached on one in the described conductor; Wavelength conversion layer; Optically coupled layers, it separates described at least one light source nude film and described wavelength conversion layer; Wherein said wavelength conversion layer further comprises low-density layer, and described low-density layer has the wavelength conversion particles that is suspended in the described layer; And wherein said wavelength conversion layer further comprises the high-density layer that is connected to described low-density layer, and described high-density layer has the wavelength conversion particles of precipitation.
Another embodiment of the present invention relates to a kind of for the flashing light system of using at mobile device.Described flashing light system comprises: light source, and it is configured to launch light; Wavelength conversion layer; Transparent separating layer, its seal described light source and be configured so that described light source away from described wavelength conversion layer; And controller circuitry, its be suitable for being arranged in the described mobile device and with described light source electric coupling to be used for activating the described light source described light that flashes; Wherein said wavelength conversion layer further comprises low-density layer, and described low-density layer has the wavelength conversion particles that is suspended in the described layer; Wherein said wavelength conversion layer further comprises high-density layer, and described high-density layer is connected to described low-density layer and has the wavelength conversion particles of precipitation; And wherein the described light from described light source emission has narrow spectrum, and described light source is coupled to be used for that described narrow spectrum light is converted to wide range light by described transparent separating layer and described wavelength conversion layer.
Description of drawings
In graphic by way of example but not with ways to restrain a plurality of illustrative embodiment are described.Describe and graphic in, similar reference number can be all the time in order to identify similar components.
Fig. 1 explanation has the cross-sectional view of the light-emitting device of sidewall;
Fig. 2 illustrates the cross-sectional view that uses the light-emitting device that does not have sidewall that transmits the mould process manufacturing;
Fig. 3 explanation is coated with the cross-sectional view of the light-emitting device of material for transformation of wave length layer at the light source nude film;
The perspective view of the light-emitting device of group's casting method manufacturing is used in Fig. 4 A explanation;
Fig. 4 B illustrates the cross-sectional view of the light-emitting device shown in Fig. 4 A that 4-4 along the line obtains;
The density of the material for transformation of wave length in the encapsulated layer of the light-emitting device shown in Fig. 4 C key diagram 4A and the 4B;
The perspective view of the light-emitting device with flip-chip dies of group's casting method manufacturing is used in Fig. 5 A explanation;
Fig. 5 B illustrates the cross-sectional view of the light-emitting device shown in Fig. 5 A that 5-5 along the line obtains;
Fig. 6 explanation has the cross-sectional view away from the light-emitting device of the connector pad of side location;
How Fig. 7 A uses group's casting method to make light-emitting device to the 7H explanation;
Fig. 8 illustrates that expression is for the manufacture of the flow chart of the method for light-emitting device;
Fig. 9 explanation has the light-emitting device of optically coupled layers;
Figure 10 explanation relates to the additional step of the manufacturing of the light-emitting device shown in Fig. 9;
Figure 11 explanation has the light emitting source encapsulation of lead frame;
Figure 12 illustrates flashing light system;
Figure 13 illustrates the block diagram of mobile device; And
Figure 14 illustrates lighting apparatus.
Embodiment
Fig. 1 illustrates the cross-sectional view of light-emitting device 100.The line that described light-emitting device 100 comprises substrate 110, connector pad 112, main body 120, light source nude film 130, join nude film 130 to substrate 110 engages 132 and encapsulation object 140.Encapsulation object 140 seals light source nude film 130 and line engages 132.Main body 120 defines the sidewall of the light that is configured to guide selfluminous device.Owing at the molecular separating force that when encapsulation object 140 is liquid form liquid is kept together during the manufacture process, the top surface of encapsulation object 140 may not be fully smooth.Main body 120 can be molded.Although main body 120 can increase reliability performance, main body 120 occupies the big quantity space that originally can reduce.
Fig. 2 explanation is by means of the light-emitting device that does not have sidewall 200 that transmits the mould process manufacturing.The line that described light-emitting device 200 comprises substrate 210, connector pad 212, light source nude film 230, join nude film 230 to substrate 210 engages 232 and encapsulated layer 240.Encapsulated layer 240 can be formed by the B level encapsulation object of mixing with material for transformation of wave length (not shown).B level encapsulation object is the intergrade in the reaction of some thermosetting resin, and wherein said material is softening and expansion when contact with some liquid when being heated, but described material may all not melt or dissolve.Material for transformation of wave length (not shown) is evenly distributed in the encapsulated layer 240 haply.Material for transformation of wave length (not shown) can cause the light loss consumption, because a part of light may be absorbed.May need encapsulated layer 240 to have a certain thickness, so that the protection light source nude film 230 of realization encapsulated layer 240 is to avoid the functional of moisture and vibration effect.Yet the light loss consumption may become significantly, because increased the thickness of encapsulated layer 240.
A kind of is by using light-converting material thin layer 350 in order to the effective means that reduces the light loss consumption, as shown in Figure 3, Fig. 3 illustrates the cross-sectional view of light-emitting device 300, and light-emitting device 300 comprises substrate 310, connector pad 312, light source nude film 330, is coated in material for transformation of wave length thin layer 350 and encapsulated layer 340 on the light source nude film 330.Encapsulated layer 340 is sealed light source nude film 330 and material for transformation of wave length thin layer 350.Material for transformation of wave length 350 can be attached to the relatively flat surface, top of light source nude film 330.Therefore, light source nude film 330 is generally flip-chip dies.Encapsulated layer 340 can use the molded or spin technology of spin to form.Encapsulated layer 340 may be for uneven.In addition, the spin molding process may be not cost-effective.
A kind of cost-effective method for the manufacture of the miniature light-emitting device with minimal light loss and flat top surface is to use group's casting method.The perspective view of Fig. 4 A explanation light-emitting device 400.The cross-sectional view of light-emitting device 400 4-4 along the line shown in Fig. 4 B exploded view 4A.Referring to Fig. 4 A and 4B, the line that light-emitting device 400 comprises substrate 410, connector pad 412, light source nude film 430, be connected to substrate 410 with nude film 430 engages 432, seal light source nude film 430 and line engages 432 encapsulated layer 440 and material for transformation of wave length 450.
Light source nude film 430 is configurable with emission light.For instance, light source nude film 430 can be the LED nude film of based semiconductor, for example gallium nitride (GaN) nude film, InGaN (InGaN) or configurable any other similar nude film that has the light of the peak wavelength of scope between 300nm and 520nm with generation.Then the light of light source nude film 430 being launched by material for transformation of wave length 450 is converted to wide-spectrum white-light.Material for transformation of wave length 450 can be any other material that yellow phosphor, red-emitting phosphor, green phosphor, orange phosphors maybe can be converted to arrowband peak value wavelength light wide-spectrum white-light.
Owing to manufacture method, encapsulated layer 440 can further comprise low-density layer 440a and high-density layer 440b, and this further specifies in Fig. 4 C.Can form encapsulated layer 440 by during manufacture process, material for transformation of wave length 450 being mixed in the encapsulation object 455 that is liquid form, and allow mixture precipitation subsequently.Described precipitation process can occur during the solidification process when the liquid envelope thing is cured as solid form simultaneously.Encapsulation object 455 can be epoxy resin, silicon or any other similar material.High-density layer 440b is formed by precipitation material for transformation of wave length layer 450, as shown in Fig. 4 C.On the other hand, low-density layer 440a does not have material for transformation of wave length 450 fully, but has the low-down density that is suspended in the material for transformation of wave length 450 in the encapsulation object 455 with particulate forms.Further discuss the details of described manufacture process to 7H and Fig. 8 referring to Fig. 7 A.
Be different from the light-emitting device 200 shown in Fig. 2, employed encapsulation object 455 is in the A level during mixed process.The A level is early stage in the reaction of some thermosetting resin, and wherein said material is fusible and still dissolves in some liquid.Because encapsulation object 455 is in the A level, so can be at side precipitation material for transformation of wave length 450.This process is defined as low-density layer 440a and high-density layer 440b with encapsulated layer 440.Because material for transformation of wave length 450 is thin layer, so because the light loss that material for transformation of wave length 450 causes consumption is minimum.In the embodiment shown in Fig. 4 B, high-density layer directly contacts with the top surface 410a of substrate 410.Yet, in other embodiments, can put upside down described layout, make low-density layer 440a directly contact with the top surface 410a of substrate 410.The layout of low-density layer 440a and high-density layer 440b depends on the orientation of substrate 410 during manufacture process, as further discussing referring to Fig. 8.
As shown in the embodiment of Fig. 4 B, line engages 432 and is encapsulated in the encapsulated layer 440.Yet the part of line joint 432 is encapsulated in the high-density layer 440b, and the remainder of line joint 432 is encapsulated in the low-density layer 440a.In another embodiment, whole line engage 432 can be enclosed among high-density layer 440b or the low-density layer 440a only in one.
As shown in Fig. 4 A, light-emitting device 400 defines rectangular shape.Both are rectangular shape substrate 410 and encapsulated layer 440, and it is overlapping fully each other.In the embodiment shown in Fig. 4 A, each in substrate 410 and the encapsulated layer 440 has four sides respectively, and it is aligned with each other respectively.In another embodiment, light-emitting device 400 can define the flat disc shape, and wherein each in substrate 410 and the encapsulated layer 440 has similar disk aligned with each other.
The top surface 440c of encapsulated layer 440 defines the general planar surface with any meniscus.Meniscus is the curve that leaves standstill in the top surface of liquid, the surface of its container in response to liquid (for example in order to form the mould of encapsulated layer 440) and producing.That meniscus can be convex surface or concave surface.Owing to group's casting method of hereinafter discussing referring to Fig. 8 more comprehensively, can eliminate meniscus by means of nominal region 745, as shown in Fig. 7 H and hereinafter discuss referring to Fig. 8.This is to compare one of advantage of light-emitting device 400 with the light-emitting device 300 shown in the Fig. 3 that wherein individually forms encapsulation object 340.
In general, low-density layer 440a and high-density layer 440b can be haply that smooth and plane earth is parallel to substrate 410.Yet in the embodiment shown in the 4B, high-density layer 440b may not be fully smooth at Fig. 4 A.The part of high-density layer 440b is enclosed light source nude film 430 and therefore define the shape of light source nude film 430 just.In one embodiment, substrate 410 has the thickness of about 0.1mm, and high-density layer 440b has the thickness of about 0.25mm, and low-density layer is about 0.35mm.Light source nude film 430 has the thickness of about 0.15mm.The integral thickness of light-emitting device 400 is about 0.6mm.Light-emitting device 400 is of a size of about 2.0mm * 2.0mm * 0.6mm.Light-emitting device 400 and the light-emitting device 100 shown in Fig. 1 are compared, can make the light-emitting device 400 that does not have sidewall 200 (see figure 1)s less relatively.In addition, the form factor of light-emitting device 400 and small size are suitable for many application, for example, and the photoflash lamp in the mobile devices such as camera phone, compact camera and any other camera apparatus for example.
The perspective view of the light-emitting device with flip-chip dies 500 of group's casting method manufacturing is used in Fig. 5 A explanation.Fig. 5 B illustrates the cross-sectional view of the light-emitting device 500 shown in Fig. 5 A that 5-5 along the line obtains.Light-emitting device 500 is similar to light-emitting device 400 haply, but different in the following fact at least: light-emitting device 500 does not have any line and engages 432, as in Fig. 4 A.Light-emitting device 500 comprises substrate 510, connector pad 512, light source nude film 530, the encapsulated layer 540 of sealing light source nude film 530 and material for transformation of wave length 550.Under the situation that does not have line joint 432 (in Fig. 4 A), light source nude film 530 is connected to substrate 510 by solder ball (not shown), and described solder ball can use in flip-chip dies is made.The encapsulated layer 540 of light-emitting device 500 further comprises high-density layer 540b and low-density layer 540a, as mentioned Fig. 4 A in the 4C discuss.
Fig. 6 illustrates light-emitting device 600, and the line that it comprises substrate 610, connector pad 612, light source nude film 630, be connected to substrate 610 with nude film 630 engages 632, seal light source nude film 630 and line engages 632 encapsulated layer 640 and material for transformation of wave length 650.Encapsulated layer 640 further comprises high-density layer 640b and low-density layer 640a.Light-emitting device 600 is similar to the light-emitting device 400 shown in Fig. 4 B haply, but different in the position of connector pad 612 at least.Connector pad 612 shown in Fig. 6 is not positioned at the side edge of light-emitting device 600, but is positioned at each side of light-emitting device 600 at a distance of a certain distance.During some sawing processes, if any metal part (for example the connector pad 612) may tear described metal part off from described device so during described sawing process in sawing line 780 (seeing Fig. 7 H).Therefore, guarantee to form connector pad 612 and can during any sawing process of making, do not torn off separating of the side of metal connector pad and device.
How Fig. 7 A uses as group's casting method of discussing referring to the flow chart of Fig. 8 to the 7H explanation is made light-emitting device 700., with step 810 beginning, in step 810, a plurality of light source nude films 730 are attached on the substrate 710, as shown in Figure 7A for the manufacture of the method for light-emitting device 700 (shown in Fig. 7 H) to 7H and Fig. 8 referring to Fig. 7 A.In the embodiment shown in Fig. 7 A, substrate 710 is PCB, and it has the light source nude film 730 (also seeing Fig. 7 B) of four groups of the top surface that is attached to substrate 710.Each group can comprise 150 light source nude films 730.Substituting number and layout also can be possible, and this depends on design and makes requirement.Optional step 810a can take place in the light source nude film 730 for non-flip-chip variety, can join light source nude film 730 lines to substrate 710 in step 810a.Next, described method advances to step 820, and the cast component 760 that will have at least one die cavity in step 820 is aimed at substrate 710, makes light source nude film 730 be closed in the described die cavity.In the embodiment shown in Fig. 7 A, cast component 760 is for defining the casting rubber components of four die cavitys, and described four die cavitys are configured to each group of enclosed light source nude film 730.Other layout also can be possible, comprises the cast component of other material.In step 830, use casting jig 770a to 770b cast component 760 and substrate 710 to be clamped together with the position with respect to substrate 710 fixed cast parts 760, as shown in Fig. 7 B.
Described method then advances to step 850, in step 850, the encapsulation object through being pre-mixed is assigned in the die cavity or above.In the embodiment shown in Fig. 7 D, carry out described distribution in the zigzag mode.Yet, can use other to distribute pattern.Next, in step 860, then allow material for transformation of wave length sedimentation or deposition, make to form low-density layer and high-density layer.In low-density layer, material for transformation of wave length (shown in Fig. 4 C) is suspended in the encapsulation object 740 with particulate forms.On the contrary, high-density layer is made up of precipitation material for transformation of wave length layer.At Fig. 7 A in the embodiment shown in the 7H, the top surface that makes substrate 710 towards on situation under carry out sedimentation or deposition process.Therefore, high-density layer is formed with the top surface of substrate and directly contacts.If carry out infall process with the prone opposite way of the top surface of substrate 710, low-density layer will form with the top surface of substrate 710 and directly contact so.Described infall process can be carried out under a certain condition, and for example rotational casting jig 770a is consistent haply with the thickness of guaranteeing encapsulated layer to 770b.Next, described method advances to step 870, makes encapsulation object be cured as solid form in step 870.Step 860 and step 870 can be carried out haply simultaneously.Step 860 also can comprise other details, for example encapsulated layer is carried out degasification.In another embodiment, the step 870 of solidifying encapsulated layer can be carried out in 150 degrees centigrade temperature 4 hours, and this carries out after step 860.
Next, described process advances to step 880, removes cast component 760 and casting jig 770a to 770b in step 880, as Fig. 7 F to as shown in the 7G.At last, described method advances to step 890, isolates each indivedual light-emitting device in step 890, for example by means of sawing.In the embodiment shown in Fig. 7 H, but sawing common substrate 710, and it has a plurality of light source nude films 730 that are encapsulated in one deck encapsulated layer.This step also can realize by means of chemistry or laser-induced thermal etching or other known separation means.In general, form meniscus or sweep at the outer perimeter place of encapsulated layer, because this is the place that the liquid envelope thing touches cast component 760.The zone at the outer perimeter place of encapsulated layer can be through selecting to define nominal region 745.Nominal region 745 is for the wherein not attached light source nude film 730 of substrate 710 or circuit but by the encapsulated layer enclosed areas.The size of nominal region 745 is through selecting so that meniscus or sweep only are formed in the nominal region 745.Can easily remove nominal region 745 by sawing or other separation means.Compare with using the light-emitting device 200 shown in the Fig. 2 that transmits the manufacturing of mould method, the elimination of nominal region 745 has cost benefit.Become group's ground casting light-emitting device 700 to reduce the needed nominal region 745 of per unit device.
Fig. 7 H shows substrate 710 is divided into multiple row and multirow to produce sawing or the defiber 780 of rectangular shape light-emitting device 700.Because the side of light-emitting device produces by sawing, so the size of encapsulated layer and substrate 710 is similar haply with shape.One of light-emitting device 700 is cost-effective is shaped as rectangular shape, because per unit area can assemble more device.Yet for any other customization or any needs that form factor are revised as other shape, method illustrated in fig. 8 is what be suitable for.For instance, for the disc-shape device, can be by laser cutting, V cutting, punching press or any other similar technology but not in the example given above illustrated sawing technology carry out the isolation of individual device.
Can use additional layer that light source nude film 530 (see figure 5)s are separated with encapsulated layer 540 (see figure 5)s, as shown in the various embodiment that hereinafter show.Fig. 9 illustrates the embodiment of the cross-sectional view of light-emitting device 900, and described light-emitting device 900 comprises substrate 910, connector pad 912, light source nude film 930, the optically coupled layers 941 of sealing light source nude film 930 with top surface 910a, is formed on encapsulated layer 940 and material for transformation of wave length 950 on the optically coupled layers 941.Substrate 910 can comprise a plurality of conductors (not shown) that are electrically coupled to light source nude film 930.Light source nude film 930 is installed on the top surface 910a of substrate 910.Can form line and engage 932 to set up being electrically connected between light source nude film 930 and the substrate 910.The top surface 940c of light-emitting device 900 can be smooth, and can define rectangular shape.
In the embodiment shown in fig. 9, can use a kind of encapsulation object of single type to form optically coupled layers 941 and encapsulated layer 940.Yet, can form differently optically coupled layers 941 with encapsulated layer 940 by avoiding adding material for transformation of wave length 950 to optically coupled layers 941 haply.Described encapsulation object can be silicone, epoxy resin or is used for sealing other similar material of light source nude film 930.Described encapsulation object can be and causes transparently to wide, and making can not have under the situation of a large amount of losses coupling pass optically coupled layers and encapsulated layer from the light of light source nude film 930 emissions.
In manufacture process, optically coupled layers 941 can be liquid or top surface 910a and the light source nude film 930 of semi-liquid form to seal substrate 910 at first, but can be cured as solid near the end of described process the time.On the other hand, encapsulated layer 940 can be by making in order to the similar encapsulation object that forms optically coupled layers 941, but can be pre-mixed to be used for described manufacture process with material for transformation of wave length 950.Can allow material for transformation of wave length 950 precipitations.This can produce high-density layer 940b and low-density layer 940a, as shown in Figure 9.In another embodiment, can use two kinds of dissimilar materials to form optically coupled layers 941 and encapsulated layer 940, described two kinds of dissimilar materials can be two kinds of dissimilar epoxy resin.
High-density layer 940b can be formed by one deck material for transformation of wave length 950 that usually is deposited on the side of encapsulated layer 940 with particulate forms, is similar to the embodiment shown in Fig. 4 C.Low-density layer 940a can comprise the low-density that is suspended in the material for transformation of wave length 950 in the encapsulation object with particulate forms, is similar to the embodiment shown in Fig. 4 C.Material for transformation of wave length 950 can sparsely be distributed among the low-density layer 940a, but it is clearly visible to use microscope.Therefore, with respect to the low particle density of low-density layer 940a, high-density layer 940b can have the roughly higher particle density of material for transformation of wave length 950.Opposite with the low particle density among the low-density layer 940a, the particle of material for transformation of wave length 950 can be deposited among the high-density layer 940b thick and fast.High-density layer 940b can directly contact with optically coupled layers 941, as shown in Figure 9.
Yet in another embodiment, high-density layer 940b can alternative arrange.In another embodiment, can put upside down the arrangement order of low-density layer 940a and high-density layer 940b with respect to the arrangement order of as shown in Figure 9 low-density layer 940a and high-density layer 940b.Therefore, in another embodiment, low-density layer 940a can change into optically coupled layers 941 and directly contacting.
Can make low-density layer 940a and high-density layer 940b haply smooth and plane earth be parallel to the top surface 910a of substrate 910, as shown in Figure 9.Among the embodiment below optically coupled layers 941 can being formed on encapsulated layer 940, high-density layer 940b can avoid directly contacting light source nude film 930 haply.
Can make that the whole layer of thickness 991 leaps of high-density layer 940b is consistent.This can provide the light homogeneity.Can produce the light homogeneity is that this is because light is propagated the roughly the same thickness 991 that passes material for transformation of wave length 950 because the light of launching from any zone of top surface 940c can be at color for similar.
Usually, the light from 930 emissions of light source nude film can have the narrow bandwidth that defines a color.Described light can be coupled and pass optically coupled layers 941, and can be then be converted to another color or wide range light when material for transformation of wave length 950 in the encapsulated layer 940 is passed in propagation.For instance, light source nude film 930 can be configured to launch blue light, but the light of externally seeing after described light passes top surface 940c is the white light with wide range wavelength.
Can arrange the parts of light-emitting device 900 to be used for the being coupled to material for transformation of wave length 950 of encapsulated layer 940 by a large amount of or most of narrow bandwidth of light of light source nude film 930 emissions, described material for transformation of wave length 950 can be provided to effective conversion of wide range light.High-density layer 940b can directly contact the edge of all sides 940e of encapsulated layer 940, and described edge can define the part of the side surface of whole light-emitting device.Encapsulated layer 940 and optically coupled layers 941 can further comprise side surface 940e and 941e, and it can have the roughly similar corresponding circumference that has sidewall and located adjacent one another piling up as shown in Figure 9.Specifically, this layout can make passes material for transformation of wave length 950 from the light transmission of light source nude film 930 emissions, leaves by top surface 940c afterwards.For reliability consideration, substrate 910 and optically coupled layers 941 can further comprise side surface 910e and 941e, and it can have the roughly similar corresponding circumference that has sidewall and located adjacent one another piling up as shown in Figure 9.
Light-emitting device 900 can use the additional step 1000 shown in the method 800 shown in Fig. 8 and Figure 10 to make.For instance, the additional step shown in Figure 10 1000 can be carried out between step 830 and 840 (see figure 8)s.Yet additional step 1000 illustrated in fig. 10 can be carried out simultaneously with the step 840 shown in Fig. 8.
As shown in Figure 10, can in step 1010, carry out degasification to transparent encapsulation object.Can then in step 1020, transparent encapsulation object be assigned in the die cavity, in order to seal the part of the top surface of light source nude film and substrate.In step 1030, can then make transparent encapsulation object be cured as solid form, thereby form the optically coupled layers 941 shown in Fig. 9.Randomly, the top surface with transparent encapsulation object before the encapsulated layer that can discuss in Fig. 8 distributes is polished to flat surfaces.Can then form encapsulated layer at optically coupled layers, described in the step 840 to 870 as shown in Figure 8.
Figure 11 illustrates the embodiment that shows light source encapsulation 1100.Described light source encapsulation 1100 can comprise a plurality of conductors 1112, light source nude film 1130 (it can be installed on one in the described conductor 1112), optically coupled layers 1141 (it can seal the major part of light source nude film 1130 and conductor 1112) and wavelength conversion layer 1140 (it can be formed on the optically coupled layers 1141).Can form line and engage 1132 so that being electrically connected between light source nude film 1130 and the conductor 1112 to be provided.Conductor 1112 can define the lead-in wire that is electrically coupled to external circuit.As shown in the embodiment of Figure 11, the part of line joint 1132 can be encapsulated in the wavelength conversion layer 1140.
In the embodiment shown in fig. 11, wavelength conversion layer 1140 can comprise low-density layer 1140a and high-density layer 1140b.Low-density layer 1140a can comprise the wavelength conversion particles that is suspended in the described layer 1140a.High-density layer 1140b can comprise the wavelength conversion particles of precipitation, as shown in Fig. 4 C.The low-density layer 1140a of wavelength conversion layer 1140 can be identified and can distinguish with optically coupled layers 1141, because low-density layer 1140a can comprise the wavelength conversion particles of suspension, the wavelength conversion particles of described suspension can be at least by using microscope visible.The precipitation of the wavelength conversion particles among the high-density layer 1140b can do not use under the microscopical situation visible.Optically coupled layers 1141 can be configured to the wavelength conversion particles in the wavelength conversion layer 1140 is separated with light source nude film 1130, feasible equal one deck that can form the wavelength conversion particles of precipitation in high-density layer 1140b.
Figure 12 illustrates the embodiment of the block diagram of showing flashing light system 1200.Flashing light system 1200 can be used in mobile device.In particular, flashing light system 1200 can be employed integrated photoflash lamp light source in the camera apparatus.
Flashing light system 1200 shown in the described embodiment can comprise light source 1230, wavelength conversion layer 1240, transparent separating layer 1241 and controller circuitry 1260.Controller circuitry 1260 can be suitable for being arranged in the mobile device.Controller circuitry can with light source 1230 electric coupling to be used for activating light source 1230 flash light 1281 and 1282.
Transparent separating layer 1241 can be configured so that light source 1230 away from wavelength conversion layer 1240.Transparent separating layer 1241 can be generally the transparent encapsulation object that can be suitable for transmitted light.Wavelength conversion layer 1240 can further comprise and has the low-density layer 1240a of wavelength conversion particles that is suspended in the layer and the high-density layer 1240b with wavelength conversion particles of precipitation, as shown in Fig. 4 C.Can comprise narrow spectrum usually from the light 1281 of light source 1230 emissions.The light 1282 that optically coupled layers 1141 enters in the wavelength conversion layer 1140 is passed in coupling can be converted into wide range light, leaves flashing light system 1200 afterwards.
Figure 13 illustrates the embodiment of the block diagram of showing camera apparatus 1300.Camera apparatus 1300 can be mobile phone, digital camera, camcorder or has any other similar device of camera function.Camera apparatus comprises photoflash lamp 1305.Described photoflash lamp 1305 can be any other device shown in the integrated flashing light system 1200 shown in Figure 12, light-emitting device 900 or the various embodiment.
Figure 14 illustrates the embodiment of lighting apparatus 1400, described lighting apparatus 1400 can comprise substrate 1410, be configured to radiative at least one light source nude film 1430, seal described at least one light source nude film 1430 optically coupled layers 1441, have the low-density wavelength conversion layer 1440a that is suspended in the wavelength conversion particles in the layer and the high density wavelength conversion layer 1440b with wavelength conversion particles of precipitation.Except photoflash lamp, lighting apparatus 1400 also can comprise employed illuminating equipment in the solid-state illumination.Lighting apparatus 1400 can be configured to launch the light that has with by the different color of the light of light source nude film 1430 emissions.For instance, as shown in the embodiment of Figure 14, the light of launching from light source nude film 1,430 1481 can have the arrowband of tool peak wavelength, and can leave lighting apparatus 1400 via optically coupled layers 1441.Another part light 1482 can leave lighting apparatus 1400 via wavelength conversion layer 1440a and 1440b, and can and then be converted to the wide range light with different color.Described wide range light 1482 can be white, and described narrow band light 1481 can be blueness or green.
Though described and illustrated specific embodiment of the present invention hereinbefore, the present invention should not be limited to any particular form or the layout of the part of description like this and explanation.For instance, light source nude film as described above can be LED nude film or a certain other following light source nude film.Equally, though discussed the light-emitting device with single nude film, light-emitting device can contain the nude film of any number, as is known or develop under the situation that does not break away from spirit of the present invention after a while.Scope of the present invention should be defined by appending claims and equivalent thereof.Similarly, can to make embodiment and step is changed, makes up, is rearranged or as known in the art other this type of revise to produce illustrated result.
Claims (20)
1. light-emitting device, it comprises:
Substrate, it has top surface;
The light source nude film, it is attached to described top surface;
Optically coupled layers, it roughly seals described light source nude film;
Encapsulated layer, it is formed on the described optically coupled layers, and wherein said encapsulated layer further comprises low-density layer and high-density layer; And
Material for transformation of wave length, it is formed in the described encapsulated layer;
Wherein said material for transformation of wave length is suspended in the described low-density layer with particulate forms; And
Wherein said material for transformation of wave length is deposited on the side of encapsulated layer, thereby defines described high-density layer.
2. light-emitting device according to claim 1, wherein said optically coupled layers and described encapsulated layer further comprise respective side surface separately, and described side surface has roughly similar corresponding circumference and located adjacent one another the piling up that has sidewall.
3. light-emitting device according to claim 1, wherein said high-density layer directly contacts with all side surfaces of described light-emitting device.
4. light-emitting device according to claim 1, wherein said low-density layer and described high-density layer general plane ground are parallel to the described top surface of described substrate.
5. light-emitting device according to claim 1, it further comprises the line that is encapsulated in the described optically coupled layers and engages.
6. light-emitting device according to claim 5, the part that wherein said line engages is encapsulated in the described high-density layer.
7. light-emitting device according to claim 1, wherein said high-density layer has roughly homogeneous thickness.
8. light-emitting device according to claim 1, wherein said encapsulated layer further comprises the top flat surface that defines rectangular shape.
9. light-emitting device according to claim 1, wherein said encapsulated layer and described optically coupled layers are to use the encapsulation object of same type to form.
10. light-emitting device according to claim 1, wherein said light-emitting device forms the part of camera apparatus.
11. a method that is used for making a plurality of light-emitting devices, described method comprises:
With a plurality of light source die attached on substrate;
To have the cast component of at least one die cavity in alignment with described substrate, and make described light source nude film be enclosed in described at least one die cavity;
Transparent encapsulation object is assigned in described at least one die cavity of sealing described light source nude film;
Described transparent encapsulation object is cured as solid form to form optically coupled layers;
Be pre-mixed the encapsulation object with material for transformation of wave length that is liquid form;
Described encapsulation object is assigned in described at least one die cavity to form encapsulated layer;
Allow described material for transformation of wave length precipitation, thereby be formed on high-density layer and low-density layer in the described encapsulated layer thereon, wherein said high-density layer comprises the described material for transformation of wave length and the described low-density layer that are deposited on the side and comprises the described material for transformation of wave length that suspends with particulate forms;
Make described encapsulated layer be cured as solid form;
Remove described cast component; And
Isolate each indivedual light-emitting device.
12. method according to claim 11, it further comprises any sweep of removing described encapsulated layer to obtain the encapsulated layer of general planar.
13. method according to claim 11, wherein said method further are included in the described cast component of rotation during the step of the described material for transformation of wave length of described permission precipitation.
14. method according to claim 11, the step of wherein said each indivedual light supply apparatus of isolation comprise the described substrate of sawing.
15. method according to claim 11, wherein said cast component comprises a plurality of die cavitys, and casts the described light source nude film in each die cavity simultaneously.
16. a light source encapsulation, it comprises:
A plurality of conductors;
At least one light source nude film, it is attached on one in the described conductor;
Wavelength conversion layer;
Optically coupled layers, it separates described at least one light source nude film and described wavelength conversion layer;
Wherein said wavelength conversion layer further comprises low-density layer, and described low-density layer has the wavelength conversion particles that is suspended in the described layer; And
Wherein said wavelength conversion layer further comprises the high-density layer that is connected to described low-density layer, and described high-density layer has the wavelength conversion particles of precipitation.
17. light source encapsulation according to claim 16, wherein said high-density layer further comprises at least one side surface, and described at least one side surface defines the part of the side surface of described light source encapsulation.
18. light source encapsulation according to claim 16, wherein said wavelength conversion layer comprises top flat surface, and described top flat surface defines the top surface of described light source encapsulation.
19. one kind for the flashing light system of using in mobile device, it comprises:
Light source, it is configured to launch light;
Wavelength conversion layer;
Transparent separating layer, its seal described light source and be configured so that described light source away from described wavelength conversion layer; And
Controller circuitry, it is suitable for being arranged in the described mobile device and with described light source electric coupling and makes described color break-up bright to be used for activating described light source;
Wherein said wavelength conversion layer further comprises low-density layer, and described low-density layer has the wavelength conversion particles that is suspended in the described layer;
Wherein said wavelength conversion layer further comprises high-density layer, and described high-density layer is connected to described low-density layer and has the wavelength conversion particles of precipitation; And
Wherein the described light from described light source emission has narrow spectrum, and described light source is coupled to be used for that described narrow spectrum light is converted to wide range light by described transparent separating layer and described wavelength conversion layer.
20. flashing light system according to claim 19, wherein said mobile device comprises camera.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/363,926 | 2012-02-01 | ||
| US13/363,926 US20120236529A1 (en) | 2011-03-15 | 2012-02-01 | Method And Apparatus For A Light Source |
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| Publication Number | Publication Date |
|---|---|
| CN103247746A true CN103247746A (en) | 2013-08-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455960A (en) * | 2001-01-24 | 2003-11-12 | 日亚化学工业株式会社 | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
| US20090167151A1 (en) * | 2007-12-27 | 2009-07-02 | Lumination Llc | Lighting device having illumination, backlighting and display applications |
| TWM407494U (en) * | 2011-02-25 | 2011-07-11 | Unity Opto Technology Co Ltd | LED package structure |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455960A (en) * | 2001-01-24 | 2003-11-12 | 日亚化学工业株式会社 | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
| US20090167151A1 (en) * | 2007-12-27 | 2009-07-02 | Lumination Llc | Lighting device having illumination, backlighting and display applications |
| TWM407494U (en) * | 2011-02-25 | 2011-07-11 | Unity Opto Technology Co Ltd | LED package structure |
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Application publication date: 20130814 |