CN103236474A - Method for manufacturing optionally cut high-voltage LED devices - Google Patents
Method for manufacturing optionally cut high-voltage LED devices Download PDFInfo
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- CN103236474A CN103236474A CN2013101214338A CN201310121433A CN103236474A CN 103236474 A CN103236474 A CN 103236474A CN 2013101214338 A CN2013101214338 A CN 2013101214338A CN 201310121433 A CN201310121433 A CN 201310121433A CN 103236474 A CN103236474 A CN 103236474A
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Abstract
The invention discloses a method for manufacturing optionally cut high-voltage LED devices. The method includes steps of 1, forming a semiconductor epitaxial structure on a substrate; 2, patterning the surface of the semiconductor epitaxial structure to form a plurality of repeated light-emitting chip units, etching the semiconductor epitaxial structure to form isolation grooves on the surface of the substrate; 3, forming insulating dielectric layers on side walls of each light-emitting chip unit; 4, evaporating metal, patterning the metal to form type-p electrodes, type-n electrodes and interconnecting lines and enabling light-emitting chip units to be electrically connected with one another by the interconnecting lines; and 5, forming scribing grooves among the light-emitting chip units, and cutting the substrate and the semiconductor epitaxial structure into a plurality of chip units along the scribing grooves. The semiconductor epitaxial structure comprises the substrate, a type-N compound semiconductor layer, an active layer and a type-P compound semiconductor layer. The light-emitting chip units are isolated from one another by the isolation grooves. The chip units comprise different quantities of light-emitting chip units, and the light-emitting chip units in each chip unit are serially connected with one another by the corresponding interconnecting lines.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly, is a kind of manufacture method of any cutting type high-voltage LED device.
Background technology
Because the arrival of petroleum-based energy crisis; more electronics and the lighting apparatus of power saving more and more come into one's own to develop more high efficiency; under this trend, have power saving, environmental protection (not mercurous) is pollution-free, light-emitting diode (the Light-Emitting Diode of advantages such as the life-span is long, brightness is high, reaction is fast, volume is little, high-luminous-efficiency; LED) assembly exposes the brilliance gradually in Lighting Industry; range of application spreads all in daily life, for example the indicator light on the instrument panel.
HV LED is the discrete micromeritics that goes out some on former DC led chip, then micromeritics is interconnected by metal electrode, these micromeritics is connected to improve the operating voltage of whole chips, so be referred to as high pressure (HV) LED.There are some drawbacks in present DC LED product in application, use in the lump as needs and original papers such as transformer, and the life-span have only about 20,000 hours, and the life-span of actual led chip reaches 5,100,000 hours.Relative with it, HV LED then need not extra transformer, only needs brief drive circuit, not only drives cost and reduces, and has also avoided the loss of energy in the switching process, thereby has become current LED product with market prospects.
Present HV led chip all adopts a plurality of subelement series connection to form the form interconnection of a chip unit, and forming voltage is the high-voltage LED chip of 50V-100V, and the dimensions of each chip unit is identical with voltage specification.Therefore, if when circuit design, need the chip of different voltage specifications and dimensions, then need to design different domains, cause plate-making process and even entire chip manufacture process cost to increase substantially, this also is the one of the main reasons under HV led chip price still is in not, and this has seriously hindered the extensive use that reduces the high-voltage LED chip.
Summary of the invention
The invention provides a kind of manufacture method of any cutting type high-voltage LED device, the high pressure in the high-voltage LED chip is sensu lato high pressure, and namely the multiple of being made up of more piece LED is referred to as high-voltage LED in the led chip of single-unit LED driving voltage.The invention provides a kind of manufacture method of any cutting high-voltage LED device, may further comprise the steps:
Form the semiconductor epitaxial structure at substrate, this semiconductor epitaxial structure comprises N-type compound semiconductor layer, active layer and P type compound semiconductor layer; To the graphical luminescence chip unit that forms a plurality of repetitions of described semiconductor epitaxial body structure surface, the described semiconductor epitaxial structure of etching forms isolation channel to substrate surface, and described isolation channel is isolated described each luminescence chip subelement; Sidewall at each luminescence chip subelement forms insulating medium layer; Evaporation metal and graphical p and n electrode and the interconnection line of forming, interconnection line is with luminescence chip subelement electrical interconnection; Between the luminescence chip subelement, form the scribing groove; It is characterized in that along the scribing groove substrate is become a plurality of chip units with the semiconductor epitaxial segmentation of structures, each chip unit comprises the luminescence chip subelement of varying number, connect by interconnection line between the luminescence chip subelement in the described chip unit.
Wherein, substrate is sapphire, silicon, carborundum or gallium nitride, and this substrate is patterned substrate or planar substrate;
Wherein the material 15 of insulating medium layer is silicon dioxide, photoresist, spin-coating glass, silicon oxynitride or silicon nitride;
Wherein compound semiconductor material layer is III-V group iii v compound semiconductor materials such as gallium nitride or GaAs;
Wherein, described each chip unit comprises 4,8,12 or 16 luminescence chip subelements;
Wherein each chip unit can be rectangle, square or rhombus, also can be other shapes;
According to another embodiment of the present invention, before cutting apart chip unit on whole epitaxial structure surface or substrate one side form earlier phosphor powder layer; This phosphor powder layer is the mixture of ceramic fluorescent powder or fluorescent material and glue, can be connected epitaxial structure p-type compound semiconductor layer one side by modes such as bonding, bonding, coatings, perhaps is connected substrate one side.
High-voltage LED array making method provided by the invention can be by changing the design of the arrangement of high-voltage LED micromeritics, electrode interconnected method and die separation groove, again epitaxial wafer is adopted the cutting and separating of different size and different units number, can access the high-voltage LED chip of different size and different driving voltage specification.
Adopt manufacture method of the present invention, can save layout design and manufacturing cost, simplify the manufacture craft of high-voltage LED chip, reduce the manufacturing cost of high-voltage LED greatly, be conducive to the wide popularization and application of high-voltage LED.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 makes flow process substantially for high-voltage LED of the present invention;
Fig. 2 is the vertical view of high-voltage LED domain of the present invention;
Fig. 3 allows the schematic diagram of the runway of laser cutting for high-voltage LED of the present invention;
Fig. 4 is after high-voltage LED of the present invention adopts cutting mode 1,2,3 or 4 respectively, the 12V that obtains, 24V, 36V and 48V high-voltage LED chip schematic diagram;
Embodiment
See also Fig. 1, the manufacture method of a kind of any cutting high-voltage LED device of the present invention may further comprise the steps:
Step 1: get epitaxial structure 1, this epitaxial structure comprises substrate 10, n type gallium nitride layer 11, active layer 12 and P type gallium nitride layer 13, and the material of described substrate 10 is sapphire, silicon, carborundum or gallium nitride, and this substrate 10 is patterned substrate;
Step 2: use the photoetching way, by even glue, preceding baking, exposure, post bake, development, make mask at the P of epitaxial structure 1 type gallium nitride layer 13; Adopt novel high-pressure LED domain structure, see Fig. 1; Use the method for etching, epitaxial structure 1 selective etch that will not have mask protection, etching depth is to the surface of n type gallium nitride layer 11, the material that etches away comprises P type gallium nitride layer 13, active layer 12 and a part of n type gallium nitride layer 11, form N-type ledge structure 100 at n type gallium nitride layer 11, described lithographic method is the inductively coupled plasma etching;
Step 3: deposit SiO at epitaxial loayer
2, wherein deposit SiO
2Method be plasma enhanced chemical vapor deposition (PECVD), ion beam depositing or electron beam deposition (EB), SiO
2Thickness be 0-5000nm; Adopt the method for photoetching, by even glue, preceding baking, exposure, post bake, development, make mask on the surface of the n type gallium nitride layer 11 of the epitaxial structure 1 that exposes, with the SiO that is not covered by photoresist
2Corrosion is clean; Etching exposed portions n type gallium nitride layer 11, etching depth form and isolate deep trouth 101 to the surface of substrate 10, and described mask is the dual mask of thick glue or silicon dioxide and common glue; The thickness of thick glue mask is 8-20um, and the degree of depth of described deep trouth 101 is the thickness sum of n type gallium nitride layer 11, active layer 12 and P type gallium nitride layer 13 above the epitaxial structure 1, and the width of deep trouth 101 is between 10-50um;
Step 4: the surface deposition insulating medium layer 20 of the epitaxial structure 1 after etching, described insulating medium layer 20 is a kind of or any multiple combination in silicon dioxide, silicon nitride or the polyimide material, thickness is 0.5 μ m-10 μ m, and described insulating medium layer 20 is that using plasma strengthens the method preparation that chemical vapour deposition (CVD), sputter or spin coating are cured;
Step 5: use the photoetching way, by even glue, preceding baking, exposure, post bake, development, make mask, erode deep trouth sidewall insulating medium layer 20 in addition; Wherein corrode SiO
2The solution of layer 20 has HF or BOE, and removes the photoresist as mask;
Step 6: adopt the photoetching way, on epitaxial structure 1, use the photoetching way again, make the photoresist mask;
Step 7: electron beam evaporation plating metal, composition are Cr/Pt/Au successively, by lift-off technology the metal level beyond the electrode position are peeled off, and form metal electrode;
Step 8: see Fig. 2, use laser scribing technology, select 1,2,3 respectively, 4 four kind of scribing runway draw and split, and can obtain 12V, 24V, 36V or four kinds of different high-voltage LED chips of 48V at last respectively, sees Fig. 4;
See also Fig. 1 to shown in Figure 4, the invention provides a kind of design and fabrication method of any cutting high-voltage LED device:
Step 1: get epitaxial structure 1, this epitaxial structure comprises substrate 10, n type gallium nitride layer 11, active layer 12 and P type gallium nitride layer 13.
Step 2: adopt novel high-pressure LED domain structure, see Fig. 2; Utilize the method for photoetching to make mask, selectivity ICP etching epitaxial structure is to the n type gallium nitride layer, and etching depth is 1.2 μ m, forms the N-type table top;
Step 3: adopting PECVD way growth thickness is the SiO of 2um
2, use the photoetching way to make mask, corrode silicon dioxide adopts the ICP deep etching method, and the part epi region of deep trench isolation is etched to the Sapphire Substrate of insulation, forms and isolates deep trouth, deep trouth height 7um;
Step 4: adopt the PECVD way, deposit thickness is the SiO of 500nm on epitaxial structure
2
Step 5: use the photoetching way to make mask, erode deep trouth sidewall SiO in addition
2
Step 6: adopt the photoetching way, on epitaxial structure, use the photoetching way again, make the photoresist mask;
Step 7: electron beam evaporation plating metal:, composition is Cr/Pt/Au successively, by lift-off technology the metal level beyond the electrode position is peeled off, and forms metal electrode;
Step 8: see Fig. 2, use laser scribing technology, select 1 among Fig. 3,2,3,4 four kind of scribing runway to draw and split respectively, can obtain 12V, 24V, 36V or four kinds of different high-voltage LED chips of 48V at last respectively, see Fig. 3, Fig. 4 respectively;
As shown in Figure 4, obtaining driving voltage is the high-voltage LED chip of 12V, wherein has 4 micromeritics to be cascaded; As shown in Figure 4, obtaining driving voltage is the high-voltage LED chip of 24V, wherein has 8 micromeritics to be cascaded; As shown in Figure 4, obtaining driving voltage is the high-voltage LED chip of 36V, wherein has 12 micromeritics to be cascaded; As shown in Figure 4, obtaining driving voltage is the high-voltage LED chip of 48V, wherein has 16 micromeritics to be cascaded;
Embodiment 2
See also Fig. 1 to shown in Figure 4, the invention provides a kind of design and fabrication method of any cutting high-voltage LED device:
Step 1: get epitaxial structure 1, this epitaxial structure comprises substrate 10, n type gallium nitride layer 11, active layer 12 and P type gallium nitride layer 13;
Step 2: adopt novel high-pressure LED domain structure, see Fig. 2; Utilize the method for photoetching to make mask, selectivity ICP etching epitaxial structure is to the n type gallium nitride layer, and etching depth is 1.2 μ m, forms the N-type table top;
Step 3: adopting PECVD way growth thickness is the SiO of 2um
2, use the photoetching way to make mask, corrode silicon dioxide adopts the ICP deep etching method, and the part epi region of deep trench isolation is etched to the Sapphire Substrate of insulation, forms and isolates deep trouth, deep trouth height 7um;
Step 4: adopt the PECVD way, deposit thickness is the SiO of 500nm on epitaxial structure
2
Step 5: use the photoetching way to make mask, erode deep trouth sidewall SiO in addition
2
Step 6: adopt the photoetching way, on epitaxial structure, use the photoetching way again, make the photoresist mask;
Step 7: electron beam evaporation plating metal:, composition is Cr/Pt/Au successively, by lift-off technology the metal level beyond the electrode position is peeled off, and forms metal electrode;
Step 8: before cutting apart chip unit, at whole epitaxial structure surface sprayed with fluorescent powder layer;
Step 9: see Fig. 2, use laser scribing technology, select 1 among Fig. 3,2,3,4 four kind of scribing runway to draw and split respectively, can obtain 12V, 24V, 36V or four kinds of different high-voltage LED chips of 48V at last respectively, see Fig. 3, Fig. 4 respectively.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (8)
1. any manufacture method of cutting high-voltage LED device may further comprise the steps:
Step 1: form the semiconductor epitaxial structure at substrate, this semiconductor epitaxial structure comprises substrate, N-type compound semiconductor layer, active layer and P type compound semiconductor layer;
Step 2: to the graphical luminescence chip unit that forms a plurality of repetitions of described semiconductor epitaxial body structure surface, the described semiconductor epitaxial structure of etching forms isolation channel to substrate surface, and described isolation channel is isolated described each luminescence chip subelement;
Step 3: the sidewall at each luminescence chip subelement forms insulating medium layer;
Step 4: evaporation metal, and graphically form p and n electrode and interconnection line, interconnection line is with luminescence chip subelement electrical interconnection;
Step 5: between the luminescence chip subelement, form the scribing groove; Along the scribing groove substrate is become a plurality of chip units with the semiconductor epitaxial segmentation of structures, each chip unit comprises the luminescence chip subelement of varying number, connects by interconnection line between the luminescence chip subelement in the described chip unit.
2. the manufacture method of any cutting high-voltage LED device according to claim 1, wherein substrate is sapphire, silicon, carborundum or gallium nitride, this substrate is patterned substrate or planar substrate.
3. the manufacture method of any cutting high-voltage LED device according to claim 1, wherein the material of insulating medium layer is silicon dioxide, photoresist, spin-coating glass, silicon oxynitride or silicon nitride.
4. the manufacture method of any cutting high-voltage LED device according to claim 1, wherein compound semiconductor material layer is gallium nitride or GaAs.
5. the manufacture method of any cutting high-voltage LED device according to claim 1, wherein said each chip unit comprises 4,8,12 or 16 luminescence chip subelements.
6. the manufacture method of any cutting high-voltage LED device according to claim 1, wherein each chip unit is polygonized structures such as rectangle, square or rhombus.
7. according to the manufacture method of claim 1,5 or 6 described any cutting high-voltage LED devices, wherein before cutting apart chip unit on whole epitaxial structure surface or substrate one side form phosphor powder layer.
8. the manufacture method of any cutting high-voltage LED device according to claim 7, described phosphor powder layer is the mixture of ceramic fluorescent powder or fluorescent material and glue.
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| CN103489887A (en) * | 2013-09-14 | 2014-01-01 | 江苏新广联科技股份有限公司 | Insulation structure used for GaN-based semiconductor LED chip and manufacturing process thereof |
| CN103762222A (en) * | 2014-01-24 | 2014-04-30 | 中国科学院半导体研究所 | Modularized array high-voltage LED chip and method for manufacturing modularized array high-voltage LED chip |
| CN103915544A (en) * | 2014-03-13 | 2014-07-09 | 东莞市奇佳电子有限公司 | Stereoscopic light-emitting LED chip lamp filament and LED lamp bulb |
| CN103943767A (en) * | 2014-05-12 | 2014-07-23 | 深圳市华晶宝丰电子有限公司 | Integrated led chip |
| CN104795481A (en) * | 2015-04-20 | 2015-07-22 | 湘能华磊光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN105226154A (en) * | 2015-10-27 | 2016-01-06 | 天津三安光电有限公司 | A kind of LED chip structure and manufacture method |
| CN105336659A (en) * | 2014-07-14 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation groove etching method of GaN-based LED chip |
| CN105449069A (en) * | 2014-08-26 | 2016-03-30 | 广东量晶光电科技有限公司 | Flip LED chip structure and manufacturing method thereof |
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| CN105655462A (en) * | 2015-12-31 | 2016-06-08 | 上海交通大学 | High-voltage direct-current GaN-based light emitting diode and preparation method thereof |
| CN106098863A (en) * | 2016-06-22 | 2016-11-09 | 华灿光电(苏州）有限公司 | A kind of preparation method of high pressure light-emitting diode chip |
| CN108807621A (en) * | 2018-06-29 | 2018-11-13 | 华南理工大学 | The shared 2 D photon crystal LED flip chip and preparation method thereof of illumination communication |
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| CN103489887A (en) * | 2013-09-14 | 2014-01-01 | 江苏新广联科技股份有限公司 | Insulation structure used for GaN-based semiconductor LED chip and manufacturing process thereof |
| CN103489887B (en) * | 2013-09-14 | 2016-04-13 | 江苏新广联科技股份有限公司 | For insulation system and the manufacturing process thereof of GaN base semi-conductor LED chips |
| CN103762222A (en) * | 2014-01-24 | 2014-04-30 | 中国科学院半导体研究所 | Modularized array high-voltage LED chip and method for manufacturing modularized array high-voltage LED chip |
| CN103915544B (en) * | 2014-03-13 | 2016-05-25 | 东莞市奇佳电子有限公司 | Stereo luminous LED chip filament and LED bulb |
| CN103915544A (en) * | 2014-03-13 | 2014-07-09 | 东莞市奇佳电子有限公司 | Stereoscopic light-emitting LED chip lamp filament and LED lamp bulb |
| CN103943767A (en) * | 2014-05-12 | 2014-07-23 | 深圳市华晶宝丰电子有限公司 | Integrated led chip |
| CN105336659B (en) * | 2014-07-14 | 2018-08-24 | 北京北方华创微电子装备有限公司 | The isolation channel lithographic method of galliumnitride base LED chip |
| CN105336659A (en) * | 2014-07-14 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation groove etching method of GaN-based LED chip |
| CN105449069B (en) * | 2014-08-26 | 2018-06-29 | 广东量晶光电科技有限公司 | A kind of flip LED chips structure and its manufacturing method |
| CN105449069A (en) * | 2014-08-26 | 2016-03-30 | 广东量晶光电科技有限公司 | Flip LED chip structure and manufacturing method thereof |
| CN105655450B (en) * | 2014-11-13 | 2019-01-18 | 北京北方华创微电子装备有限公司 | The passivation layer deposition method of high voltage LED chip |
| CN105655450A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Passivation layer deposition method of high-voltage LED chip |
| CN104795481B (en) * | 2015-04-20 | 2017-10-17 | 湘能华磊光电股份有限公司 | Light emitting diode and preparation method thereof |
| CN104795481A (en) * | 2015-04-20 | 2015-07-22 | 湘能华磊光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN105226154A (en) * | 2015-10-27 | 2016-01-06 | 天津三安光电有限公司 | A kind of LED chip structure and manufacture method |
| CN105655462A (en) * | 2015-12-31 | 2016-06-08 | 上海交通大学 | High-voltage direct-current GaN-based light emitting diode and preparation method thereof |
| CN105655462B (en) * | 2015-12-31 | 2018-04-17 | 上海交通大学 | High voltage direct current gallium nitride based light emitting diode and its manufacture method |
| CN106098863A (en) * | 2016-06-22 | 2016-11-09 | 华灿光电(苏州）有限公司 | A kind of preparation method of high pressure light-emitting diode chip |
| CN108807621A (en) * | 2018-06-29 | 2018-11-13 | 华南理工大学 | The shared 2 D photon crystal LED flip chip and preparation method thereof of illumination communication |
| CN109192833A (en) * | 2018-08-22 | 2019-01-11 | 大连德豪光电科技有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN109524524A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of production method that the GaN zanjon for LED planarizes |
| CN109524524B (en) * | 2018-11-23 | 2020-04-28 | 江苏新广联半导体有限公司 | Manufacturing method for GaN deep groove planarization of LED |
| CN110571314A (en) * | 2019-09-25 | 2019-12-13 | 佛山市国星半导体技术有限公司 | reverse voltage-stabilizing LED chip and preparation method thereof |
| CN110571314B (en) * | 2019-09-25 | 2024-07-09 | 佛山市国星半导体技术有限公司 | Reverse voltage-stabilizing LED chip and preparation method thereof |
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Application publication date: 20130807 |