CN103199439B - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
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- CN103199439B CN103199439B CN201310101392.6A CN201310101392A CN103199439B CN 103199439 B CN103199439 B CN 103199439B CN 201310101392 A CN201310101392 A CN 201310101392A CN 103199439 B CN103199439 B CN 103199439B
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Abstract
The invention relates to the technical field of laser technology and provides a semiconductor laser device which comprises semiconductor laser arrays, fast axle collimating lenses, a varied lattice spacing diffraction grating and a reflecting mirror. The semiconductor laser arrays, the fast axle collimating lenses, the varied lattice spacing diffraction grating and the reflecting mirror are arranged in sequence along a light path. Each semiconductor laser array comprises at least two laser emitting units. Laser emitted from the laser emitting units is subjected to collimation of the fast axle collimating lenses and then is shot on the varied lattice spacing diffraction grating. The laser is subjected to diffraction of the varied lattice spacing diffraction grating to form parallel light, and then the parallel light is shot on the reflecting mirror with 1%-15% of reflectivity. The reflecting mirror is arranged perpendicular to the diffracted parallel light. The diffracted parallel light is subjected to transmission of the reflecting mirror to emit laser beams with ultrahigh brightness. The semiconductor laser device can be used for supplying the laser beams with ultrahigh brightness, and is integrally simple, stable and reliable.
Description
[technical field]
The present invention relates to laser technology field, particularly relate to a kind of semicondcutor laser unit.
[background technology]
High power semiconductor laser unit has that electro-optical efficiency is high, volume is little, reliability is high and the advantage such as the life-span is long, has extremely important using value at numerous areas such as industrial processes, biologic medical, national defence.Along with the development of semiconductor laser technique, the light power of single array semi-conductor lasers (LDA, Laser Diode Array) can reach a kilowatt magnitude, and electro-optical efficiency can reach more than 60%.But the waveguiding structure of semiconductor laser causes its beam quality bad, and the axial optical parameter of speed is actively unbalanced, and quick shaft direction is close to diffraction limit, and the beam quality extreme difference of slow-axis direction, seriously constrain its range of application.General semiconductor laser array output beam is 35-40 degree in the angle of divergence of quick shaft direction at present, and be 6-8 degree in the angle of divergence of slow-axis direction, spectrum peak half width when freely operating is 2-4nm.
The brightness of laser is directly proportional to luminous power, and with square being inversely proportional to of beam parameter product, the laser of high brightness can be focused into the hot spot of high power density under larger Rayleigh range condition, improves quality and the efficiency of materials processing.The semiconductor laser of high brightness can be directly used in the cutting of metal material, welding, the field such as cladding and punching, has expanded the range of application of semiconductor laser.And at present, the brightness of large-power semiconductor laser array is relatively low, hot spot after focusing is generally used for the nonmetallic melting welding such as plastics, rubber and cutting, and the occasion that metal surface modification and cladding etc. are not high to power density requirements, and also fewer to the applications that power density requirements is very high in the deep penetration welding, cutting, punching etc. of metal, its main cause is exactly that the brightness of laser beam is not high enough.
Therefore, how providing a kind of semicondcutor laser unit that can produce high brightness laser light beam, is technical problem urgently to be resolved hurrily at present.
[summary of the invention]
The invention provides a kind of semicondcutor laser unit, be intended to solve semicondcutor laser unit in prior art and produce the not high enough problem of laser beam brightness.
The present invention adopts following technical scheme:
A kind of semicondcutor laser unit, described laser aid comprises and setting gradually along light path:
Semiconductor laser array,
Fast axis collimation mirror,
Become pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, the laser that described lasing fluorescence unit sends incides and becomes pitch diffraction grating after fast axis collimation mirror collimation, and after becoming pitch diffraction grating diffraction, form directional light incide the speculum that reflectivity is 1%-15%, described speculum is set to vertical with the directional light after diffraction, and the directional light after diffraction transmits the laser beam of high brightness through speculum.
Preferably, the laser center wavelength scope that described lasing fluorescence unit sends is 800nm---1000nm.
Preferably, the light emission side that described semiconductor laser array is close to by described fast axis collimation mirror is fixed, and fast axis collimation mirror is coated with anti-reflection film.
Preferably, described change pitch diffraction grating groove is 1000-1800 line/mm, and pitch is b
x, wherein said b
xfor the grating constant along slow-axis direction grating x place; The distance L becoming pitch diffraction grating centre-to-centre spacing semiconductor laser array is 100-800mm; Adjacent lasing fluorescence unit is to the incidence angle difference 1-4 milliradian becoming pitch diffraction grating same point, and described change pitch diffraction grating is transmission-type grating or reflection-type grating.
Preferably, the reflectivity of described speculum is uniformly distributed; Or the core reflectivity of described speculum is high, and marginal portion reflectivity is low.
Preferably, the reflectivity of described speculum is in the one-dimensional square upwards distribution in Gaussian function.
Preferably, described change pitch diffraction grating and speculum are set to integrated optical element.
Preferably, the shape of described integrated optical element is triangular prism, and the cross section of described triangular prism is triangle, and a side of triangular prism realizes the function becoming pitch diffraction grating, and the another side of triangular prism realizes the function of partially reflecting mirror.
Preferably, described semiconductor laser array comprises 3 lasing fluorescence unit.
Preferably, described semicondcutor laser unit comprises 3 semiconductor laser arrays, semiconductor laser heap is formed by described 3 semiconductor laser arrays, each semiconductor laser array comprises 3 lasing fluorescence unit, the light emission side of each semiconductor laser array is fixed with a fast axis collimation mirror respectively, three beams is incident to change pitch diffraction grating and speculum from the light beam of different semiconductor laser array after respective fast axis collimation mirror collimation simultaneously, transmits the laser beam of high brightness.
Beneficial effect of the present invention is: by becoming pitch diffraction grating and speculum formation external cavity feedback, exocoel frequency-selecting is carried out to sub-laser beam each in semiconductor laser array, control the wavelength gradient of each sub-laser beam, improve the outgoing beam quality of each sub-lasing fluorescence unit.Meanwhile, become pitch diffraction grating and there is dispersion conjunction beam function, after optical grating diffraction, each sub-laser beam exiting parallel.Whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
[accompanying drawing explanation]
Fig. 1 is single array semi-conductor laser device structure schematic diagram that the embodiment of the present invention 1 provides;
Fig. 2 is the structural representation becoming pitch diffraction grating in Fig. 1;
Fig. 3 is the structural representation becoming pitch diffraction grating and mirror integral in the embodiment of the present invention 1;
Fig. 4 is the reflectivity Gaussian Profile schematic diagram of speculum in the embodiment of the present invention 1;
Fig. 5 is many array semi-conductors laser device structure schematic diagram that the embodiment of the present invention 2 provides.
Description of reference numerals:
100: semiconductor laser array
101: lasing fluorescence unit
200: fast axis collimation mirror
300: become pitch diffraction grating
400: speculum
10: semiconductor laser heap
[embodiment]
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiments provide a kind of semicondcutor laser unit, described laser aid comprises and setting gradually along light path:
Semiconductor laser array,
Fast axis collimation mirror,
Become pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, the laser that described lasing fluorescence unit sends incides and becomes pitch diffraction grating after fast axis collimation mirror collimation, and after becoming pitch diffraction grating diffraction, form directional light incide the speculum that reflectivity is 1%-15%, described speculum is set to vertical with the directional light after diffraction, and the directional light after diffraction transmits the laser beam of high brightness through speculum.
The embodiment of the present invention, by becoming pitch diffraction grating and speculum formation external cavity feedback, is carried out exocoel frequency-selecting to sub-laser beam each in semiconductor laser array, is controlled the wavelength gradient of each sub-laser beam, improve the outgoing beam quality of each sub-lasing fluorescence unit.Meanwhile, become pitch diffraction grating and there is dispersion conjunction beam function, after optical grating diffraction, each sub-laser beam exiting parallel.Whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
Embodiment 1
The embodiment of the present invention 1 provides a kind of single array semi-conductor laser aid.
The method improving semiconductor laser array brightness mainly contains coherent superposition and non-coherent addition two class: the essence of coherent superposition is the superposition of light wave amplitude, effectively can improve the beam quality of semiconductor laser array output beam, but need each superposition sub-light source Phase synchronization to lock, technical difficulty is comparatively large, and is not easy to obtain the stable output of powerful homophase; Non-coherent addition is the superposition of light intensity, and as methods such as beam shaping method, the polarization addition method and the wavelength additions method, but non-coherent addition is difficult to the laser beam obtaining high brightness, and limited to the improvement of beam quality.The brightness of laser is directly proportional to luminous power, and with square being inversely proportional to of beam parameter product, so beam parameter product to be reduced an order of magnitude, brightness will increase by two orders of magnitude.
If first improve the beam quality of sub-lasing fluorescence unit in non-coherent addition class, then light intensity superposition is implemented to the light beam with wavelength gradient, just can obtain the laser beam of more high brightness.Utilize external cavity feedback, can improve the beam quality of semiconductor laser, each sub-laser beam superposition after improvement, can obtain the stabilized lasers of high brightness.
The embodiment of the present invention adopts exocoel and dispersion element, being injected by exocoel allows each lasing fluorescence unit difference resonance on different wavelength, and the centre wavelength of adjacent laser luminescence unit differs the gradient of a Δ λ in turn, the light less parallel after dispersion light splitting, semiconductor laser array sent again along a direction outgoing, the beam quality of whole semiconductor laser array is made to be equal to the beam quality of single lasing fluorescence unit when exocoel injection locking, gross power is made to improve N doubly while improving sub-laser beam quality, wherein N is that luminescence in semiconductor laser array is counted, also be the lasing fluorescence unit number in semiconductor laser array.
Please refer to shown in Fig. 1, is single array semi-conductor laser device structure schematic diagram that embodiment 1 provides.This semicondcutor laser unit is single array, comprises the semiconductor laser array 100, fast axis collimation mirror 200, change pitch diffraction grating 300 and the speculum 400 that set gradually along light path.This semiconductor laser array 100 comprises at least 2 lasing fluorescence unit 101, is 3 lasing fluorescence unit 101 in the present embodiment.The laser center wavelength scope that lasing fluorescence unit sends can be 800nm-1000nm, but is not limited thereto wave-length coverage.Preferably, can adopt and send the semiconductor laser array 100 that laser center wavelength is 976nm, but be not limited thereto wavelength.In the present embodiment, the luminous point of lasing fluorescence unit 101 is 1x100um(micron), the fast axle angle of divergence is 35 degree, and slow axis divergence is 8 degree, and adjacent laser luminescence unit 101 spacing is 500um, and the power output of single laser array 100 is 50-80w.
In the present embodiment, the focal length of fast axis collimation mirror 200 is about 1.0mm, and numerical aperture is 0.5-0.8.The light emission side that semiconductor laser array 100 is close to by fast axis collimation mirror 200 is fixed, and it is coated with anti-reflection film, and the light transmission rate near 976nm is greater than 99.5%.The light that semiconductor laser array 100 sends is after fast axis collimation mirror 200 collimates, and the quick shaft direction angle of divergence is about several milliradian.
Please also refer to shown in Fig. 2, for becoming the structural representation of pitch diffraction grating 300.Become pitch diffraction grating 300 groove average out to 1000-1800 line/mm, transmission diffraction efficiency is more than 90%, grid pitch changing grating density in the present embodiment
wherein, b
xfor grating grating constant everywhere, α is the incidence angle of grating each point, and β is the angle of emergence of outgoing directional light, and λ is optical maser wavelength.Preferably, the distance L scope becoming pitch diffraction grating 300 centre-to-centre spacing semiconductor laser array 100 is 100--800mm, but is not limited thereto distance range, and preferably, L is 200mm.Adjacent lasing fluorescence unit 101 to the incidence angle difference 1-4 milliradian becoming pitch diffraction grating 300 same point, such as, is 2 milliradians.The wavelength gradient delta λ of adjacent laser luminescence unit 101 is made to be about 0.5nm-2nm by external cavity feedback.Becoming pitch diffraction grating 300 is transmission-type grating or reflection-type grating.
The reflectivity distribution of speculum 400 is even, and reflectivity is 1%-15%.Certainly, speculum 400 also can be reflectivity-variable speculum, and its reflectivity can be different in spatial distribution, and such as core reflectivity is high, and marginal portion reflectivity is low, effectively can improve the angle of divergence of slow-axis direction.Certainly, also reflectivity distribution upwards can be allowed to be Gaussian function or other forms at one-dimensional square, specifically please refer to shown in Fig. 4, for the reflectivity Gaussian Profile schematic diagram of speculum 400, core reflectivity is high, the gain that the light of the sub-lasing fluorescence unit 101 slow axis central area in corresponding return laser light chamber obtains is more, can compress the Energy distribution of slow axis beam further.
The operation principle of the semicondcutor laser unit that the propagation path of laser optical path and the present embodiment provide is: the laser that lasing fluorescence unit 101 sends is after fast axis collimation mirror 200 collimates, become very little in the angle of divergence of quick shaft direction, incide the hot spot become on pitch diffraction grating 300 and become a rectangle, its slow-axis direction is long, and quick shaft direction is short.The grating line becoming pitch diffraction grating 300 is vertical with slow-axis direction, the light generation diffraction of slow-axis direction, and the light that same sub-lasing fluorescence unit 101 sends makes the diffraction light change of output be directional light due to the effect of change pitch, and incides speculum 400.Different to the light focus point of different incident wavelength owing to becoming pitch diffraction grating 300, the two-beam of therefore adjacent lasing fluorescence unit 101 outgoing only has the wavelength gradient keeping certain could become unidirectional directional light after becoming pitch diffraction grating 300 diffraction.Speculum 400 is vertical with the directional light after diffraction, only have the light returned through the former road of speculum 400 just can enter in semiconductor laser chamber, so external cavity feedback have selected the wavelength gradient of adjacent laser luminescence unit 101 automatically, also improve the outgoing beam quality of each sub-lasing fluorescence unit 101 simultaneously.Speculum 400 is part reflection, changes the laser beam of super brightness through the light beam after speculum 400 into.In light shaping process, sub-laser beam does not change the angle of divergence of elementary beam on quick shaft direction through change pitch diffraction grating 300 and speculum 400, so the beam energy of outgoing is in being with distribution always, distribution density is gradient slightly.The brightness of super brightness laser beam is generally greater than hundred megawatts/(cm
2.sr), the brightness of current Commercial semiconductors LASER Light Source is all less than this value, maximum 60 megawatts/(cm
2.sr) left and right.
Preferably, change pitch diffraction grating and speculum can be set to integrated optical element, please also refer to shown in Fig. 3, for becoming the structural representation of pitch diffraction grating and mirror integral, in the present embodiment, this integrated optical element is triangular prism, its cross section is triangle, certainly, leg-of-mutton shape there is no particular restriction, such as, can be right-angled triangle.One side of triangular prism realizes the function becoming pitch diffraction grating, and the another side of triangular prism realizes the function of partially reflecting mirror.When the cross section of triangular prism is right-angled triangle, a side at hypotenuse place realizes the function becoming pitch diffraction grating, the function of a side achievement unit sub reflector mirror at triangle one right-angle side place.Adopt integrated element, the adjustment of whole light path is become very easy, and adds stability and the reliability of whole device.
The semicondcutor laser unit that the embodiment of the present invention 1 provides, external cavity feedback is formed by change pitch diffraction grating 300 and speculum 400, exocoel frequency-selecting is carried out to sub-laser beam each in semiconductor laser array 100, control the wavelength gradient of each sub-laser beam, improve the outgoing beam quality of each sub-lasing fluorescence unit 101.Meanwhile, become pitch diffraction grating 300 and there is dispersion conjunction beam function, after optical grating diffraction, each sub-laser beam exiting parallel.By same change pitch diffraction grating 300, while the sub-laser beam quality of improvement, antithetical phrase laser beam realizes wavelength synthesis, and whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
Embodiment 2
The embodiment of the present invention 2 provides a kind of many array semi-conductors laser aid.
Please refer to shown in Fig. 5, is many array semi-conductors laser device structure schematic diagram that the embodiment of the present invention 2 provides.The structure composition of whole device is described for the semiconductor laser heap of 3 semiconductor laser array compositions in figure, but the composition number of arrays of semicondcutor laser unit provided by the invention is not limited to 3, can be several, such as 2,4,5 or more, not enumerate herein.Structure and the principle of single array elaborate in embodiment 1, repeat no more herein.
Please refer to shown in Fig. 5, this semicondcutor laser unit comprises 3 semiconductor laser arrays 100, semiconductor laser heap 10 is formed by these 3 semiconductor laser arrays 100, each semiconductor laser array 100 comprises 3 lasing fluorescence unit 101, the light emission side of each semiconductor laser array 100 is fixed with a fast axis collimation mirror 200 respectively, 3 fast axis collimation mirrors 200 collimate the fast axial light bundle of respective array, three beams is incident to change pitch diffraction grating 300 and speculum 400 from the light beam of different semiconductor laser array 100 after respective fast axis collimation mirror 200 collimation simultaneously, the light beam of each semiconductor laser array 100 all superposes increase brightness voluntarily by the description in embodiment 1, the light beam of different semiconductor laser array 100 then passes through space overlapping at quick shaft direction, output class is like dimensional energy distribution hot spot like shutter, the device that the light beam that all semiconductor laser heaps 10 export provides through the present embodiment, after light beam synthesis, total beam quality is equal to the quality that each exocoel injects rear sub-laser beam, thus transmit the laser beam of super brightness.If very little with a lens focus Focus Club, Rayleigh range can be comparatively large, and when meeting certain brightness requirement, this semicondcutor laser unit can be used for the occasions such as Metal Cutting, can the function of Some substitute fiber laser.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a semicondcutor laser unit, is characterized in that, described laser aid comprises and setting gradually along light path:
Semiconductor laser array,
Fast axis collimation mirror,
Become pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, the laser that described lasing fluorescence unit sends incides and becomes pitch diffraction grating after fast axis collimation mirror collimation, and after becoming pitch diffraction grating diffraction, form directional light incide the speculum that reflectivity is 1%-15%, described speculum is set to vertical with the directional light after diffraction, and the directional light after diffraction transmits the laser beam of high brightness through speculum;
Described change pitch diffraction grating and speculum are set to integrated optical element.
2. semicondcutor laser unit according to claim 1, is characterized in that, the laser center wavelength scope that described lasing fluorescence unit sends is 800nm-1000nm.
3. semicondcutor laser unit according to claim 1, is characterized in that, the light emission side that described semiconductor laser array is close to by described fast axis collimation mirror is fixed, and fast axis collimation mirror is coated with anti-reflection film.
4. semicondcutor laser unit according to claim 1, is characterized in that, described change pitch diffraction grating groove is 1000-1800 line/mm, and pitch is b
x, wherein said b
xfor the grating constant along slow-axis direction grating x place; The distance L becoming pitch diffraction grating centre-to-centre spacing semiconductor laser array is 100-800mm; Adjacent lasing fluorescence unit is to the incidence angle difference 1-4 milliradian becoming pitch diffraction grating same point, and described change pitch diffraction grating is transmission-type grating or reflection-type grating.
5. semicondcutor laser unit according to claim 1, is characterized in that, the reflectivity of described speculum is uniformly distributed; Or the core reflectivity of described speculum is high, and marginal portion reflectivity is low.
6. semicondcutor laser unit according to claim 5, is characterized in that, the reflectivity of described speculum is in the one-dimensional square upwards distribution in Gaussian function.
7. semicondcutor laser unit according to claim 1, it is characterized in that, the shape of described integrated optical element is triangular prism, the cross section of described triangular prism is triangle, one side of triangular prism realizes the function becoming pitch diffraction grating, and the another side of triangular prism realizes the function of partially reflecting mirror.
8. the semicondcutor laser unit according to any one of claim 1 ~ 7, is characterized in that, described semiconductor laser array comprises 3 lasing fluorescence unit.
9. the semicondcutor laser unit according to any one of claim 1 ~ 7, it is characterized in that, described semicondcutor laser unit comprises 3 semiconductor laser arrays, semiconductor laser heap is formed by described 3 semiconductor laser arrays, each semiconductor laser array comprises 3 lasing fluorescence unit, the light emission side of each semiconductor laser array is fixed with a fast axis collimation mirror respectively, three beams is incident to change pitch diffraction grating and speculum from the light beam of different semiconductor laser array after respective fast axis collimation mirror collimation simultaneously, transmits the laser beam of high brightness.
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| CN103904557A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Device and method for beam combination of laser devices |
| CN106941240B (en) * | 2017-05-18 | 2023-07-21 | 温州泛波激光有限公司 | Semiconductor laser |
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| CN109491096B (en) * | 2018-12-24 | 2021-08-06 | 西安炬光科技股份有限公司 | Optical device, laser module and laser beam processing method |
| CN111180986A (en) * | 2020-01-09 | 2020-05-19 | 江苏师范大学 | Distributed feedback laser based on holographic polymer dispersed liquid crystal |
| CN114994933B (en) * | 2022-07-19 | 2022-10-21 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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