CN103173742A - Spraying head and vapor deposition reaction cavity - Google Patents
Spraying head and vapor deposition reaction cavity Download PDFInfo
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- CN103173742A CN103173742A CN2013101282566A CN201310128256A CN103173742A CN 103173742 A CN103173742 A CN 103173742A CN 2013101282566 A CN2013101282566 A CN 2013101282566A CN 201310128256 A CN201310128256 A CN 201310128256A CN 103173742 A CN103173742 A CN 103173742A
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Abstract
The invention relates to a spraying head applied to a III-V-type material deposition reaction cavity. The reaction cavity comprises a gas reaction area, wherein the spraying head is arranged adjacent to the gas reaction area. The spraying head comprises a III-type source gas cavity, a cooling cavity and a V-type source gas cavity which are isolated mutually, wherein the V-type source gas cavity is formed adjacent to the gas reaction area; the III-type source gas cavity is formed at one side, departing from the gas reaction area, of the V-type source gas cavity; and the cooling cavity is arranged between the III-type source gas cavity and the V-type source gas cavity. The invention further provides a vapor deposition reaction cavity provided with the spraying head. The V-type source gas cavity is not blocked by the cooling cavity, so that the V-type source gas cavity can be heated by thermal radiations from the gas reaction area, which is beneficial to the decomposition of the V-type source gas. In addition, the III-type source gas cavity is blocked by the cooling cavity, so that the temperature of the III-type source gas in the III-type source gas cavity is lowered, i.e., the III-type source gas is prevented from being decomposed too rapidly. Therefore, the deposition efficiency is improved.
Description
Technical field
The present invention relates to semi-conductor device technology field, particularly relate to a kind of spray header and cvd chamber.
Background technology
From the rise of the basic third generation semiconductor material of GaN (gan), blue-ray LED (photodiode) is succeeded in developing, and the luminous intensity of LED and white-light emitting efficient improve constantly.LED is considered to the New Solid light source that the next generation enters the general illumination field, therefore obtains extensive concern.
The manufacturing process of the white light LEDs of prior art is carried out in a reaction chamber that has under temperature controlled environment usually.Usually, III clan source gas and group V source gas are passed into respectively in the chemical vapour deposition reaction chamber, III clan source gas and group V source gas at the reaction chamber internal reaction to form III-V family material film on substrate.
In existing technology, adopt spray header 100 shown in Figure 1 to pass into reactant gases to the chemical vapour deposition reaction chamber.described spray header 100 comprises the III clan source air chamber 140 that stacks gradually, group V source air chamber 150 and cooling chamber 160, the conversion zone of described cooling chamber 160 contiguous gases, gas in described III clan source air chamber 140 is discharged through the first tracheae 142, gas in described group V source air chamber 150 is discharged through the second flue 152, because described cooling chamber 160 is arranged on described III clan source air chamber 140 and group V source air chamber 150 belows, so, described cooling chamber 160 has sheltered from described III clan source air chamber 140 and group V source air chamber 150, make gas in described III clan source air chamber 140 and group V source air chamber 150 not by the heat in conversion zone in cvd chamber.
After described III clan source gas and group V source gas are discharged from described spray header 100, heated by the pallet in chemical vapor deposition process chamber in conversion zone, thereby prevent described III clan source gas and the too early mixing of group V source gas, thereby avoid reacting too early.but, due in the prior art, described cooling chamber 160 has sheltered from the thermal radiation of conversion zone to group V source air chamber 150 in the cvd chamber, make the temperature of the group V source gas that enters into reaction chamber not high, yet, because needing high decomposition temperature, group V source gas could decompose to react with group V source gas, thereby, above-mentioned spray header 100 causes sedimentation effect low, and, the outlet passageway of III clan source air chamber and group V source air chamber (the first tracheae 142 and the second flue 152) all needs by described cooling chamber 160, make described spray header 100 complex structures, make difficulty.
Therefore, how to provide a kind of spray header, can improve sedimentation effect, become the technology that those skilled in the art need to solve.
Summary of the invention
There is the low problem of sedimentation effect in the spray header of prior art, the invention provides a kind of spray header that can address the above problem and cvd chamber.
the invention provides the spray header of a kind of III-V of being applied to family deposition of material reaction chamber, described reaction chamber comprises gas reaction area, the contiguous described conversion zone setting of described spray header, described spray header is used for to described conversion zone output-response gas, described spray header comprises the III clan source air chamber of mutual isolation, cooling chamber and group V source air chamber, the contiguous described conversion zone setting of described group V source air chamber, described III clan source air chamber is arranged at the side that described group V source air chamber deviates from described conversion zone, described cooling chamber is arranged between described III clan source air chamber and group V source air chamber.
Further, in described spray header, described spray header further comprises the first tracheae, described the first tracheae passes described cooling chamber and described group V source air chamber, described the first tracheae is communicated with described III clan source air chamber and described conversion zone, be provided with outlet passageway between described group V source air chamber and described conversion zone, be communicated with by described outlet passageway between described group V source air chamber and described conversion zone.
Further, in described spray header, described spray header comprises:
Top board, base plate and be arranged on top board and base plate between the first plate and the second plate;
Form airtight III clan source air chamber between described top board and described the first plate, form airtight group V source air chamber between described base plate and described the second plate, form airtight cooling chamber between described the first plate and the second plate, described base plate is positioned at contiguous described conversion zone one side;
Thereby described the first tracheae passes described the first plate, the second plate and described base plate successively is communicated with described III clan source air chamber and described conversion zone;
Described outlet passageway is arranged on described base plate, and described outlet passageway passes described base plate and is communicated with group V source air chamber and described conversion zone.
Further, in described spray header, described outlet passageway is the gas orifice that is arranged on described base plate.
Further, in described spray header, the diameter of described gas orifice is greater than the diameter of described the first tracheae, and described the first tracheae is arranged in described gas orifice.
Further, in described spray header, described base plate is the reticulated structure plate, and described outlet passageway is the eyelet of described reticulated structure plate.
Further, in described spray header, pass into III clan source gas in described III clan source air chamber, described III clan source gas is one or more the combination in trimethyl-gallium, trimethyl aluminium or trimethyl indium, pass into group V source gas in described group V source air chamber, described group V source gas is one or more the combination in phosphuret-(t)ed hydrogen, hydrogen arsenide or ammonia.
According to another side of the present invention, the present invention also provides a kind of cvd chamber, it comprises cavity, is used for pallet and the spray header of load substrates, described pallet is arranged at the bottom of described cavity, described spray header is arranged on the top of described cavity and is oppositely arranged with described pallet, limit gas reaction area between described pallet and described spray header, described spray header is used for to described conversion zone output-response gas, and described spray header is spray header as above.
Further, in described cvd chamber, described cvd chamber further comprises well heater, and described well heater is arranged at described pallet and deviates from described conversion zone one side, is used for heating described pallet.
Further, in described cvd chamber, when gas-phase deposition, the temperature of described pallet is 700 ℃～1400 ℃.
Compared with prior art, spray header provided by the invention and cvd chamber have the following advantages:
1. in spray header of the present invention and cvd chamber, the contiguous described conversion zone setting of described group V source air chamber, described III clan source air chamber is arranged at the side that described group V source air chamber deviates from described conversion zone, described cooling chamber is arranged between described III clan source air chamber and group V source air chamber, compared with prior art, when carrying out gas reaction, owing to having the higher temperatures environment in conversion zone, described group V source air chamber does not have stopping of described cooling chamber, infrared radiant energy can heat described group V source air chamber, so that the described group V source γ-ray emission pre-heat effect in described group V source air chamber, help the thermolysis of group V source gas, and described cooling chamber stops that described III clan source air chamber to reduce the temperature of the III clan source gas in described III clan source air chamber, prevents III clan source gas too quick decomposition, thereby improves sedimentation effect.
2. in spray header of the present invention and cvd chamber, described the first tracheae passes described cooling chamber and described group V source air chamber, be provided with outlet passageway between described group V source air chamber and described conversion zone, be communicated with by described outlet passageway between described group V source air chamber and described conversion zone, described outlet passageway is not by described cooling chamber, make described showerhead configuration simplify, be easy to make.
3. in spray header of the present invention and cvd chamber, described spray header comprises top board, base plate and be arranged on top board and base plate between the first plate and the second plate, form airtight III clan source air chamber between described top board and described the first plate, form airtight group V source air chamber between described base plate and described the second plate, form airtight cooling chamber between described the first plate and the second plate, described the first tracheae passes described the first plate successively, thereby the second plate and described base plate are communicated with described III clan source air chamber and described conversion zone, described base plate is provided with outlet passageway, can reduce quantity and the density of the welding between flue and plate, thereby reduction manufacture difficulty.
Description of drawings
Fig. 1 is the schematic diagram of spray header of the prior art;
Fig. 2 is the schematic diagram of the spray header of first embodiment of the invention;
Fig. 3 is the vertical view of base plate in the spray header of first embodiment of the invention;
Fig. 4 is the schematic diagram of the cvd chamber of first embodiment of the invention;
Fig. 5 is the schematic diagram of the spray header of second embodiment of the invention;
Fig. 6 is the vertical view of base plate in the spray header of second embodiment of the invention;
Fig. 7 is the vertical view of base plate in the spray header of third embodiment of the invention;
Fig. 8 is the schematic diagram of the spray header of four embodiment of the invention.
Embodiment
In the spray header of prior art, described spray header comprises III clan source air chamber, group V source air chamber and the cooling chamber that stacks gradually, described cooling chamber has sheltered from described III clan source air chamber and group V source air chamber, make gas in described III clan source air chamber and group V source air chamber not by the heat in conversion zone in cvd chamber, cause the spray header sedimentation effect of prior art low.the contriver finds through the further investigation to the prior art spray header, the decomposition temperature of group V source gas is higher, and the decomposition temperature of III clan source gas is lower, if described cooling chamber is arranged between described III clan source air chamber and described group V source air chamber, when deposition reaction occurs, described group V source air chamber does not have stopping of described cooling chamber, the described group V source air chamber of infrared radiant energy heating, group V source gas in described group V source air chamber there is pre-heat effect, help the decomposition of group V source gas, and described cooling chamber can effectively reduce the temperature of III clan source gas, prevent III clan source gas too quick decomposition, thereby raising sedimentation effect.
because above-mentioned research, the invention provides a spray header, described spray header is applied to III-V family deposition of material reaction chamber, described reaction chamber comprises gas reaction area, the contiguous described conversion zone setting of described spray header, described spray header is used for to described conversion zone output-response gas, described spray header comprises the III clan source air chamber of mutual isolation, cooling chamber and group V source air chamber, the contiguous described conversion zone setting of described group V source air chamber, described III clan source air chamber is arranged at the side that described group V source air chamber deviates from described conversion zone, described cooling chamber is arranged between described III clan source air chamber and group V source air chamber, described group V source air chamber does not have stopping of described cooling chamber, the described group V source air chamber of infrared radiant energy heating from described conversion zone, with to the described group V source γ-ray emission pre-heat effect in described group V source air chamber, help the decomposition of group V source gas, and described cooling chamber stops that described III clan source air chamber to reduce the temperature of the III clan source gas in described III clan source air chamber, prevents III clan source gas too quick decomposition, thereby improves sedimentation effect.
Further, described spray header comprises the first tracheae, described the first tracheae passes described cooling chamber and described group V source air chamber, be provided with outlet passageway between described group V source air chamber and described conversion zone, described group V source air chamber is communicated with by described outlet passageway with described conversion zone, described outlet passageway can so that described showerhead configuration is simplified, be easy to make not by described cooling chamber.
further, described spray header comprises top board, base plate and be arranged on top board and base plate between the first plate and the second plate, form airtight III clan source air chamber between described top board and described the first plate, form airtight group V source air chamber between described base plate and described the second plate, form airtight cooling chamber between described the first plate and the second plate, described the first tracheae passes described the first plate successively, thereby the second plate and described base plate are communicated with described III clan source air chamber and described conversion zone, described base plate is provided with outlet passageway, described the first plate and described the second plate only need to weld with described the first tracheae 242, avoid described outlet passageway is welded, can reduce quantity and the density of the welding between flue and plate, thereby reduction manufacture difficulty.
Compare with the prior art spray header, in spray header of the present invention, described cooling chamber is between described III clan source air chamber and described group V source air chamber, when deposition reaction occurs, described group V source air chamber does not have stopping of described cooling chamber, the described group V source air chamber of infrared radiant energy heating, group V source gas in described group V source air chamber there is pre-heat effect, help the decomposition of group V source gas, and described cooling chamber can effectively reduce the temperature of III clan source gas, prevent III clan source gas too quick decomposition, thereby improve sedimentation effect.
See also Fig. 2, Fig. 2 is the schematic diagram of the spray header of first embodiment of the invention.
As shown in Figure 2, described spray header 200 is used for the deposition of material reaction chamber 10 input reactant gasess to III-V family.described reaction chamber 10 comprises gas reaction area 14, the contiguous described conversion zone 14 of described spray header 200 arranges, described spray header 200 is used for to described conversion zone 14 output-response gases, described spray header 200 comprises the III clan source air chamber 240 of mutual isolation, cooling chamber 260 and group V source air chamber 250, the contiguous described conversion zone 14 of described group V source air chamber 250 arranges, described III clan source air chamber 240 is arranged at the side that described group V source air chamber 250 deviates from described conversion zone 14, described cooling chamber 260 is arranged between described III clan source air chamber 240 and group V source air chamber 250.When carrying out gas reaction, because the described conversion zone 14 of reaction chamber has the higher temperatures environment, described group V source air chamber 250 does not have stopping of described cooling chamber 260, infrared radiant energy can heat described group V source air chamber 250, with to the described group V source γ-ray emission pre-heat effect in described group V source air chamber 250, help the thermolysis of group V source gas; And, described cooling chamber 260 stops that described III clan source air chamber 240 is to reduce the temperature of the III clan source gas in described III clan source air chamber 240, prevent III clan source gas too quick decomposition, make the rate of decomposition of described III clan source gas and described group V source gas be complementary, thereby improve sedimentation effect.
In the present embodiment, described spray header 220 comprise top board 211, base plate 212 and be arranged on top board 211 and base plate 212 between the first plate 220 and the second plate 230, described the first plate 220 is positioned at the top of described the second plate 230, and described base plate 212 is positioned at contiguous described conversion zone 14 1 sides.Form airtight III clan source air chamber 240 between described top board 211 and described the first plate 220, form airtight group V source air chamber 250 between described base plate 212 and described the second plate 230, form airtight cooling chamber 260 between described the first plate 220 and described the second plate 230, by described the first plate 220 and described the second plate 230 isolation described III clan source air chamber 240, described cooling chamber 260 and described group V source air chamber 250, can reduce manufacture difficulty.
In the present embodiment, described spray header 220 also comprises sidewall 213, to form airtight III clan source air chamber 240, group V source air chamber 250 and cooling chamber 260.Have one first air intake 241 on described sidewall 213, can pass into III clan source gas to described III clan source air chamber 240 by described the first air intake 241, as shown in Figure 2.But pass into III clan source gas to described III clan source air chamber 240 and be not limited to aforesaid way, for example, described the first air intake 241 can also be arranged on described top board 211, passes into III clan source gas to described III clan source air chamber 240; Can also realize passing into the purpose of III clan source gas, also within thought range of the present invention.In like manner, in the present embodiment, have one second air intake 251 on described sidewall 213, can pass into group V source gas to described group V source air chamber 250 by described the second air intake 251, as shown in Figure 2.But pass into group V source gas to described the second air intake 251 and be not limited to aforesaid way, for example, described the second air intake 251 can also be arranged on described top board 211, and passes described III clan source air chamber 240 and described the first plate 220, passes into III clan source gas to described group V source air chamber 251; Can also realize passing into the purpose of group V source gas, also within thought range of the present invention.
Described spray header 200 also comprises the first tracheae 242, described the first tracheae 242 passes described cooling chamber 260 and described group V source air chamber 250, described the first tracheae 242 is communicated with described III clan source air chamber 240 and described conversion zone 14, be provided with outlet passageway between described group V source air chamber 250 and described conversion zone 14, be communicated with by described outlet passageway between described group V source air chamber 250 and described conversion zone 14.So, only have described the first tracheae 242 to pass through in described cooling chamber 260 and described group V source air chamber 250 are equal, described outlet passageway by described cooling chamber 260, does not make described spray header 200 designs simplifications, facilitates processing and manufacturing.But the structure of described spray header 200 is not limited to as described the first tracheae 242 passes described cooling chamber 260 and described group V source air chamber 250, and described group V source air chamber 250 is communicated with by described outlet passageway with described conversion zone 14.
In the present embodiment, thereby described the first tracheae 242 passes described the first plate 220, the second plate 230 and described base plate 212 successively is communicated with described III clan source air chamber 240 and described conversion zone 14, makes the described III clan source gas in described III clan source air chamber 240 flow out to described conversion zone 14 by described the first tracheae 242.Described base plate 212 is provided with the outlet passageway with described group V source air chamber 250 and 14 connections of described conversion zone, described outlet passageway passes described base plate 212 to be communicated with group V source air chamber 250 and described conversion zone 14, and described group V source gas flows out to described conversion zone 14 by described outlet passageway.Wherein, described the first plate 220 and 230 needs of described the second plate weld with described the first tracheae 242, avoid described outlet passageway is welded, and have reduced quantity and the density of the welding between flue and plate, thereby reduce manufacture difficulty; And, only isolate by described the first plate 220 between described cooling chamber 260 and described III clan source air chamber 240, only isolate by described the second plate 230 between described cooling chamber 260 and described group V source air chamber 250, so, do not need described the first tracheae 242 is welded on respectively on the cavity wall of described III clan source air chamber 240, described cooling chamber 260 and described group V source air chamber 250, only need described the first tracheae 242 is welded on described the first plate 220 and described the second plate 230, thereby save manufacturing process.
In the present embodiment, described outlet passageway is the gas orifice 252 that is arranged on described base plate 212, and described gas orifice 252 can be discharged described group V source gas easily.Please again consult Fig. 2, better, described gas orifice 252 and described the first tracheae 242 staggered being spaced on described base plate 212.The gas orifice 252 of interlaced arrangement can be so that described III clan source gas and described group V source gas mix after being discharged to gas reaction area uniformly with described the first tracheae 242, thereby be conducive to reactant gases, chemical reaction occurs equably, the uniform film of deposition on substrate.See also Fig. 3, Fig. 3 is the vertical view of the spray header base plate of first embodiment of the invention, and in Fig. 3, the aperture that is arranged in order is the array of described gas orifice 252 and described the first tracheae 242.
Better, described cooling chamber 260 is a whole chamber, surrounded by described the first plate 220 and the second plate 230 and described sidewall 213 and form, cooling inflow pipe 261 and cooling outlet pipe 262 are installed on described sidewall 213, with to the interior logical cooling gas of described cooling chamber 210 or cooling fluid, as water coolant or cooling wet goods.
Wherein, the interior logical III clan source gas of described III clan source air chamber 240, as one or more the combination in trimethyl-gallium, trimethyl aluminium or trimethyl indium, but described III clan source gas is not limited to be trimethyl-gallium, trimethyl aluminium or trimethyl indium.The interior logical group V source gas of described group V source air chamber 250, as one or more the combination in phosphuret-(t)ed hydrogen, hydrogen arsenide or ammonia, but described group V source gas is not limited to be phosphuret-(t)ed hydrogen, hydrogen arsenide or ammonia, as long as the film of described III clan source gas and described group V source gas reaction generation III-V family material is also within thought range of the present invention.in the present embodiment, the interior logical trimethyl-gallium of described III clan source air chamber 240, the interior logical ammonia of described group V source air chamber 250, the decomposition temperature of trimethyl-gallium is low, the decomposition temperature of ammonia is high, the temperature of pallet is higher than 650 ℃, due to the thermal radiation that is subjected to described pallet, ammonia is preheated, be conducive to the thermolysis of ammonia, and described cooling chamber 260 stops described III clan source air chamber 240, to reduce the temperature of the trimethyl-gallium in described III clan source air chamber 240, prevent that trimethyl-gallium from decomposing too fast, thereby make ammonia and trimethyl-gallium near described substrate surface, thermolysis occur, crystallization reaction to occur and deposit film on described substrate.
The following specifically describes use as mentioned above, the cvd chamber 10 of first embodiment of the invention spray header 200.See also Fig. 4, described cvd chamber 10 comprises cavity 11, is used for pallet 13 and the described spray header 200 of load substrates 12.Described pallet 13 is arranged at the bottom of described cavity 11.Described spray header 200 is arranged on the top of described cavity 11 and is oppositely arranged with described pallet 13.Limit gas reaction area 14 between described pallet 13 and described spray header 200.Described spray header 200 is used for to described conversion zone 14 output-response gases, and in described conversion zone 14, group V source gas, III clan source gas mix, and react, to form thin film deposition on described substrate 12.In the present embodiment, described spray header 200 is positioned at described cavity 11, sprays reactant gases with the interior described conversion zone 14 to described cavity 11; But described spray header 200 also can partly be positioned at described cavity 11, as: as described in spray header 200 only have as described in base plate 212 be positioned at as described in cavity 11, can also realize spraying reactant gases to the interior described conversion zone 14 of described cavity 11, also within thought range of the present invention.
Better, described cvd chamber 10 also comprises well heater 15, described well heater 15 is positioned at described reaction chamber 10, be used for heating described pallet 13, in the present embodiment, described well heater 15 is arranged at described pallet 13 and deviates from described conversion zone 14 1 sides, with the described pallet 13 of convenient heating, but described well heater 15 is not limited to be arranged at described pallet 13 deviates from described conversion zone 14 1 sides, as long as can heat described pallet 13, also within thought range of the present invention.
Better, when gas-phase deposition, the temperature of described pallet 13 is 700 ℃～1400 ℃, make it possible to deposition III-V material film on substrate, simultaneously, be conducive to the group V source gas in described group V source air chamber 250 is carried out preheating, thereby improve sedimentation effect.The temperature of pallet 13 is 800 ℃, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃ as described, but it is 700 ℃～1400 ℃ that the temperature of described pallet 13 is not limited to, concrete temperature can be set according to the concrete needs of gas-phase deposition, as carrying out Temperature Setting according to the film type, thickness or the group V source gas that deposit, III clan source gas etc.
When carrying out gas reaction, the pallet 13 of described cavity 11 is in hot environment, described group V source air chamber 250 does not have stopping of described cooling chamber 260, the described group V source air chamber 250 of infrared radiant energy heating, with to the described group V source γ-ray emission pre-heat effect in described group V source air chamber 250, help the decomposition of group V source gas; And 260 of described cooling chambers stop described III clan source air chamber 240 to reduce the temperature of the III clan source gas in described III clan source air chamber 240, prevent III clan source gas too quick decomposition, thereby improve sedimentation effect.
In the present embodiment, described cvd chamber 10 is MOCVD (metal organic chemical vapor deposition) equipment, in this equipment, described spray header 200 provides described III clan source gas and group V source gas to described cavity 11, react thereby make in described III clan source gas and the group V source gas described conversion zone 14 above described pallet 13, to form thin film deposition.
See also Fig. 5, Fig. 5 is the schematic diagram of spray header the second embodiment of the present invention.The spray header 300 of described the second embodiment is basic identical with the spray header 200 of described the first embodiment, its difference is: on described base plate 312, the diameter of described gas orifice 352 is greater than the diameter of described the first tracheae 342, described the first tracheae 342 is arranged in described gas orifice 352, referring to Fig. 6, Fig. 6 is the vertical view of base plate in spray header the second embodiment of the present invention.
In the present embodiment, described the first tracheae 342 can be discharged described III clan source gas easily, due to the diameter of described gas orifice 352 diameter greater than described the first tracheae 342, described the first tracheae 342 is arranged in described gas orifice 352, thereby make described III clan source gas and described group V source gas to discharge by coaxial duct, and then make described III clan source gas and described group V source gas uniform mix, be conducive on substrate deposit film equably.
See also Fig. 7, Fig. 7 is the vertical view of base plate in the spray header of third embodiment of the invention.The spray header 200 of the spray header of described the 3rd embodiment and described the first embodiment is basic identical, and its difference is: described base plate 412 is the reticulated structure plate, and described outlet passageway is the eyelet 453 of described reticulated structure plate.
The eyelet 453 of described reticulated structure plate can also be discharged described group V source gas easily, can be so that described III clan source gas and described group V source gas can mix after being discharged from uniformly, thereby be conducive to occur chemical reaction, reach the beneficial effect that film can be deposited equably on substrate.Wherein, described the first tracheae can directly directly pass from described eyelet 453, also can hole on the described base plate 412 between described eyelet 453, makes described the first tracheae pass described base plate 412 so that described III clan source gas to be provided to described substrate.
the present invention is not limited to above embodiment, III clan source air chamber, cooling chamber, the group V source air chamber can be distinguished independently, and the plate making forms, as shown in Figure 8, in four embodiment of the invention, III clan source air chamber 540, cooling chamber 560, after the independent moulding of group V source air chamber 550, stack gradually again connection, make connection III clan source air chamber 540 pass through hole corresponding on described cooling chamber 560 and group V source air chamber 550 and arrive the surface of giving vent to anger, thereby form described spray header 500, can also realize described cooling chamber 560 is arranged between described III clan source air chamber 540 and group V source air chamber 550, thereby also can reach the beneficial effect that improves sedimentation effect, also within thought range of the present invention.
Although the present invention discloses as above with better embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (10)
1. spray header that is applied to III-V family deposition of material reaction chamber, described reaction chamber comprises gas reaction area, the contiguous described conversion zone setting of described spray header, described spray header is used for to described conversion zone output-response gas, it is characterized in that: described spray header comprises the III clan source air chamber of mutual isolation, cooling chamber and group V source air chamber, the contiguous described conversion zone setting of described group V source air chamber, described III clan source air chamber is arranged at the side that described group V source air chamber deviates from described conversion zone, described cooling chamber is arranged between described III clan source air chamber and group V source air chamber.
2. spray header as claimed in claim 1, it is characterized in that: described spray header further comprises the first tracheae, described the first tracheae passes described cooling chamber and described group V source air chamber, described the first tracheae is communicated with described III clan source air chamber and described conversion zone, be provided with outlet passageway between described group V source air chamber and described conversion zone, be communicated with by described outlet passageway between described group V source air chamber and described conversion zone.
3. spray header as claimed in claim 2, it is characterized in that: described spray header comprises:
Top board, base plate and be arranged on the first plate and the second plate between described top board and base plate;
Form airtight III clan source air chamber between described top board and described the first plate, form airtight group V source air chamber between described base plate and described the second plate, form airtight cooling chamber between described the first plate and the second plate, described base plate is positioned at contiguous described conversion zone one side;
Thereby described the first tracheae passes described the first plate, the second plate and described base plate successively is communicated with described III clan source air chamber and described conversion zone;
Described outlet passageway is arranged on described base plate, and described outlet passageway passes described base plate and is communicated with group V source air chamber and described conversion zone.
4. spray header as claimed in claim 3, it is characterized in that: described outlet passageway is the gas orifice that is arranged on described base plate.
5. spray header as claimed in claim 4, it is characterized in that: the diameter of described gas orifice is greater than the diameter of described the first tracheae, and described the first tracheae is arranged in described gas orifice.
6. spray header as claimed in claim 3, it is characterized in that: described base plate is the reticulated structure plate, described outlet passageway is the eyelet of described reticulated structure plate.
7. spray header as described in any one in claim 1-6, it is characterized in that: pass into III clan source gas in described III clan source air chamber, described III clan source gas is one or more the combination in trimethyl-gallium, trimethyl aluminium or trimethyl indium, pass into group V source gas in described group V source air chamber, described group V source gas is one or more the combination in phosphuret-(t)ed hydrogen, hydrogen arsenide or ammonia.
8. cvd chamber, it comprises cavity, is used for pallet and the spray header of load substrates, described pallet is arranged at the bottom of described cavity, described spray header is arranged on the top of described cavity and is oppositely arranged with described pallet, limit gas reaction area between described pallet and described spray header, described spray header is used for to described conversion zone output-response gas, and it is characterized in that: described spray header is spray header as described in any one in claim 1-7.
9. cvd chamber as claimed in claim 8, it is characterized in that: described cvd chamber further comprises well heater, described well heater is arranged at described pallet and deviates from described conversion zone one side, is used for heating described pallet.
10. cvd chamber as claimed in claim 8, it is characterized in that: when gas-phase deposition, the temperature of described pallet is 700 ℃～1400 ℃.
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| CN2013101282566A CN103173742A (en) | 2013-04-12 | 2013-04-12 | Spraying head and vapor deposition reaction cavity |
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| CN2013101282566A CN103173742A (en) | 2013-04-12 | 2013-04-12 | Spraying head and vapor deposition reaction cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914202A (en) * | 2018-08-10 | 2018-11-30 | 北京索提斯科技有限公司 | A kind of HVPE equipment can be mass gallium nitride |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108914202A (en) * | 2018-08-10 | 2018-11-30 | 北京索提斯科技有限公司 | A kind of HVPE equipment can be mass gallium nitride |
| CN108914202B (en) * | 2018-08-10 | 2021-02-19 | 北京镓数智能科技有限公司 | HVPE equipment capable of producing gallium nitride in batches |
| CN116479406A (en) * | 2023-06-20 | 2023-07-25 | 长鑫存储技术有限公司 | Chemical vapor deposition apparatus and method |
| CN116479406B (en) * | 2023-06-20 | 2023-11-10 | 长鑫存储技术有限公司 | Chemical vapor deposition apparatus and method |
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