CN103166579B - Amplifying device - Google Patents
Amplifying device Download PDFInfo
- Publication number
- CN103166579B CN103166579B CN201210357297.8A CN201210357297A CN103166579B CN 103166579 B CN103166579 B CN 103166579B CN 201210357297 A CN201210357297 A CN 201210357297A CN 103166579 B CN103166579 B CN 103166579B
- Authority
- CN
- China
- Prior art keywords
- amplifier
- bipolar transistor
- switch element
- frequency signal
- amplifying device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 230000003321 amplification Effects 0.000 claims description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 14
- 230000009466 transformation Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000006731 degradation reaction Methods 0.000 abstract description 8
- 241001125929 Trisopterus luscus Species 0.000 description 16
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/417—A switch coupled in the output circuit of an amplifier being controlled by a circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
Providing a kind of amplifying device, it can prevent performance degradation, reduce cost simultaneously.Described amplifying device includes: the first amplifier, is connected between the input terminal of input high-frequency signal and the lead-out terminal of output high-frequency signal, including bipolar transistor, and amplifies the high-frequency signal of input from input terminal；Second amplifier, including bipolar transistor, amplifies the high-frequency signal from input terminal input, and has the peak power output lower than the peak power output of the first amplifier；And switch element, it is connected between the second amplifier and lead-out terminal, and is optionally exported the high-frequency signal amplified by the second amplifier by lead-out terminal.
Description
Cross-Reference to Related Applications
This application claims in the Japanese patent application that on December 8th, 2011 submits to Japan Office
The priority of No.2011-269200, the disclosure of which is incorporated herein by reference.
Technical field
The present invention relates to amplifying device.
Background technology
During close to maximum output, lead to for amplifying the amplifier of the high-frequency signal used in radio communication
Often there is superior power added efficiency (PAE).But, using the such as mobile electricity of amplifier
In the communication equipment of words, the use frequency of Maximum Output Level can be relatively low, and at about 10dB to big
The use frequency of the relatively low output of about 20dB can be higher.
To this end, in above-mentioned communication equipment, there is the low output of about 10dB to about 20dB
PAE greatly affects the continuous use time of the communication equipment driven by internal powers such as batteries.
In this respect, switch uses according to when carrying out and operate required power output amplification high-frequency signal
The technology of amplifier developed.Following correlation technique document can be provided as switching multiple behaviour
The technical examples of the peak power output of each operator scheme in operation mode.
The such as high property of InGaP HBT (hereinafter referred to as " HBT ") etc.
Can be used as power amplifier by bipolar transistor.
Meanwhile, usual GaAs based compound semiconductor has been used as the switch of switching amplifier, i.e.
HEMT (HEMT).
To this end, such as use the amplifying device of technology disclosed in following correlation technique document, can root
Putting of the amplifier that power output switch required for operating according to device is used when amplifying high-frequency signal
Big device (or amplifier module) needs to combine the most multiple semiconductor chips, therefore includes combined
Semiconductor chip, thus cause the increase of manufacturing cost or the increase of unit size.
Additionally, in recent years, InGaP HBT and HEMT can be configured to single semiconductor chip
Complicated technology developed.
But, due to above-mentioned complex procedures, cost during use, can be caused to increase.
[correlation technique document]
Japanese patent application publication No. 2001-211090
Summary of the invention
One aspect of the present invention is to provide the amplifying device of a kind of new improvement, and it can prevent performance
Degenerate, reduce manufacturing cost simultaneously.
According to an aspect of the invention, it is provided a kind of amplifying device, including: the first amplifier,
It is connected between the input terminal of input high-frequency signal and the lead-out terminal of output high-frequency signal, including double
Bipolar transistor, and amplify the high-frequency signal from input terminal input；Second amplifier, including double
Bipolar transistor, amplifies the high-frequency signal from input terminal input, and has than the first amplifier
The peak power output that peak power output is low；And switch element, it is connected to the second amplifier and defeated
Go out between terminal, optionally exported the high-frequency signal amplified by the second amplifier by lead-out terminal,
Wherein, described switch element includes: impedance transformer, be arranged on the second amplifier and lead-out terminal it
Between holding wire on, carry out impedance transformation；First bipolar transistor, wherein, grounded emitter,
Colelctor electrode is connected to holding wire, according to the voltage that controls for controlling switching manipulation in switch element
Electric current is applied to base stage；And second bipolar transistor, wherein, grounded collector, emitter stage
Being connected to holding wire, the electric current according to controlling voltage is applied to base stage.
Due to this structure, it can be ensured that each signal path relevant to the first amplifier and putting with second
The signal path isolation that big device is relevant, and performance degradation can be prevented.Additionally, due to this structure,
Identical with the bipolar transistor types included by the first amplifier or the second amplifier is ambipolar
The first and second bipolar transistors that transistor is included in can be used as switch element.Accordingly, because
This structure, can prevent performance degradation, reduce cost simultaneously.
Switch element can farther include capacitor, and one end of this capacitor is connected to the second ambipolar crystalline substance
The base stage of body pipe, other end ground connection.
Included in the bipolar transistor included in first and second amplifiers and switch element
One can be formed by identical technique with the second bipolar transistor.
Accompanying drawing explanation
In conjunction with accompanying drawing, by detailed description below, can be more clearly understood from the above of the present invention and
Other aspects, feature and other advantages, wherein:
Fig. 1 is the circuit of the structure example illustrating the amplifying device according to first embodiment of the invention
Figure；
Fig. 2 A is to illustrate second pair according to included in the switch element of first embodiment of the invention
The curve map of the effect of bipolar transistor；
Fig. 2 B is to illustrate second pair according to included in the switch element of first embodiment of the invention
The curve map of the effect of bipolar transistor；
Fig. 3 is the circuit of the structure example illustrating the amplifying device according to second embodiment of the invention
Figure；
Fig. 4 A is to illustrate the capacitor according to included in the switch element of second embodiment of the invention
The curve map of effect；And
Fig. 4 B is to illustrate the capacitor according to included in the switch element of second embodiment of the invention
The curve map of effect.
Detailed description of the invention
The most below referring to accompanying drawing, describe embodiments of the invention in detail.In the figure of the present invention,
Similar reference numeral represents the similar components with same structure and function, and does not repeats
Identical element is described.
According to carrying out operating required power output, the amplification that switching is used when amplifying high-frequency signal
During device, following configuration can be used: when needing high-power output, use high-frequency amplifier to amplify high frequency letter
Number, and in needs during power output, use the output of middle power to amplify high-frequency signal.In this article,
When using above-mentioned configuration, it is appropriate that when carrying out high power and amplifying, close intermediate power amplifier
Power, can not adversely affect high power amplification path, and when carrying out middle power amplification, closes height
The power of power amplifier, power amplification path in can not adversely affecting.
Briefly, however in parallel there is different output power amplifier time, due to the property of high-frequency signal
Can, the amplification performance in phase mutual impedance meeting degenerate amplifier between amplifier.
As a result, the tie point in amplifying device according to an embodiment of the invention, between amplifier
Place provides switch element, so that it is guaranteed that be separated from each other and prevent performance degradation.
Below, as switch element according to an embodiment of the invention, describe and open and close list
Pole single-throw (SPST) switch, for switching one input and an output respectively.Additionally, in order to
It is easy to describe, describes an input and the SPST of an output, but according to embodiments of the invention
Switch element be not limited to SPST switch.Such as, switch element according to an embodiment of the invention
It can be the switch that an input and at least two output are opened and closed.Enforcement according to the present invention
The switch element of example can so include various switch, thus includes one or at least two switch list
Unit.
(the first embodiment)
Fig. 1 is the circuit of the structure example illustrating the amplifying device according to first embodiment of the invention
Figure.
Amplifying device 100 includes the input terminal (Pin) of input high-frequency signal, exports high-frequency signal
Lead-out terminal (Pout), the first amplifier the 102, second amplifier 104 and switch element 106.
In this article, can be used for frequency signal (such as, 30kHz to the 300GHz in radio communication
Signal), such as long wave, medium wave, shortwave, ultrashort wave, superelevation shortwave, microwave, millimeter wave etc.
Deng, can be used as the high-frequency signal according to embodiment of the present invention.Additionally, according to embodiment of the present invention
High-frequency signal be not limited to this.
Such as, can be the frequency signal less than 30kHz according to the high-frequency signal of embodiment of the present invention
Or the frequency signal of more than 300GHz.
First amplifier 102 is connected between input terminal (Pin) and lead-out terminal (Pout).
Additionally, the first amplifier 102 includes bipolar transistor, and amplify from input terminal (Pin)
The high-frequency signal of input.
In this article, the compound base HBT of such as InGaP HBT or indium phosphide HBT
(heterojunction bipolar transistor, HBT), such as SiGe HBT
CMOS(Complementary Metal Oxide Semiconductor, CMOS half
Conductor) base HBT or such as SiGe HBT and block CMOS complicated technology in SiGe
The HBT of the use conventional process such as SiGeBiCMOS can be as constituting the bipolar of the first amplifier 102
The example of transistor npn npn.Additionally, be not limited to this according to the bipolar transistor of embodiment of the present invention.
Additionally, high-frequency signal can be amplified at the first amplifier 102 include the feelings of bipolar transistor simultaneously
Under condition, arbitrary structure can be used.
Second amplifier 104 includes bipolar transistor, and amplifies from input terminal (Pin) defeated
The high-frequency signal entered.Additionally, the peak power output of the second amplifier 104 is than the first amplifier 102
Peak power output low.More specifically, the second amplifier 104 includes that size is than the first amplifier 102
In the little transistor of the size of included transistor.Additionally, according to the second of embodiment of the present invention
When the peak power output of amplifier 104 is lower than the peak power output of the first amplifier 102, second
It is less than the size of transistor included in the first amplifier 102 that amplifier 104 may not include size
Transistor.The size ratio first of transistor included in describing the second amplifier 104 below
The example that the size of transistor included in amplifier 102 is little.
In this article, compound base HBT, the such as SiGe HBT of such as InGaP HBT
Silica-based HBT or such as SiGe HBT and block CMOS complicated technology in
The HBT of the use conventional process of SiGeBiCMOS can with constituted the double of the first amplifier 102
The mode of bipolar transistor similar mode is as the bipolar transistor constituting the second amplifier 104
Example.Additionally, constitute the second amplifier 104 bipolar transistor can by with is formed first amplify
The technique that the technique of the bipolar transistor of device 102 is identical is formed.
As long as additionally, including bipolar transistor in it the while that the second amplifier 104 can amplifying high-frequency signal
Pipe, then any configuration can be used.
Additionally, the size of the transistor of the second amplifier 104 sets according to the application of the second amplifier 104
Put.More specifically, when the first amplifier 102 is for the amplifier that high power amplifies, second puts
The transistor of big device 104 be sized so that with less than corresponding high-power middle power amplification
Or low-power amplification correspondence, when the first amplifier 102 is for the amplifier of middle power amplification, the
Being sized so that and the low-power less than corresponding middle power of the transistor of two amplifiers 104
Amplify correspondence.
Switch element 106 is connected between the second amplifier 104 and lead-out terminal (Pout), and
The high-frequency signal amplified by the second amplifier 104 is optionally exported by lead-out terminal (Pout).
In other words, switch element 106 can optionally make the second amplifier 104 work.
[1] structure of switch element 106
Switch element 106 includes impedance transformer (MSTL), the first bipolar transistor (TR1)
And second bipolar transistor (TR2).
Additionally, in switch element 106, according to controlling voltage (Vc0) and controlling voltage (Vc1)
Voltage level (high level/low level) control switch on and off switching manipulation.More specifically, such as,
When controlling voltage (Vc1) in the case of the voltage level controlling voltage (Vc0) is fixed to high level
Voltage level when being low level, switch element 106 is connected, and when controlling voltage (Vc1)
When voltage level is high level, switch element 106 disconnects.
Impedance transformer (MSTL) be arranged on the second amplifier 104 and lead-out terminal (Pout) it
Between holding wire on, be converted into low resistance from high resistance, and be converted into high resistance from low resistance.
In this article, 1/4 wavelength line using frequency can be as the reality of impedance transformer (MSTL)
Example.
In the first bipolar transistor (TR1), grounded emitter, colelctor electrode is connected to signal
Line, the electric current according to controlling voltage (Vc1) is applied to base stage.
In this article, the compound base HBT, all of such as InGaP HBT or indium phosphide HBT
Silica-based HBT or such as SiGe HBT and the complexity of block CMOS such as SiGe HBT
The HBT of the use conventional process of the SiGeBiCMOS in technique can be as the first bipolar transistor
(TR1) example.Additionally, this invention is not limited to above-described according to embodiment of the present invention
First bipolar transistor (TR1).Additionally, switch element 106 includes and constitutes the first amplifier
102 or the second identical bipolar transistor of the bipolar transistor types of amplifier 104, as
One bipolar transistor (TR1).
In the second bipolar transistor (TR2), grounded collector, emitter stage is connected to signal
Line, the electric current according to controlling voltage (Vc1) is applied to base stage.
In this article, as the first bipolar transistor (TR1), such as InGaP HBT
Or the silica-based HBT of the compound base HBT of indium phosphide HBT, such as SiGe HBT or
The use of the SiGeBiCMOS in the such as complicated technology of SiGe HBT and block CMOS is commonly used
The HBT of technique can be as the example of the second bipolar transistor (TR2).Additionally, the present invention does not limits
In the second bipolar transistor (TR2) according to embodiment of the present invention described above.Additionally,
Switch element 106 includes type and constitutes the ambipolar of the first amplifier 102 or the second amplifier 104
The identical bipolar transistor of the type of transistor is as the second bipolar transistor (TR2).
[2] at the example of switch element 106 breaker in middle operation
Will be described below the switching manipulation example of switch element 106.
(1), when switch element 106 is disconnected, second is not operated at operation the first amplifier 102
In the case of amplifier 104, it is possible to provide situations below.
Such as, it is high level when the voltage level controlling voltage (Vc0) and controls voltage (Vc1)
Voltage level when being high level, the first bipolar transistor (TR1) and the second bipolar transistor
(TR2) conducting.In this case, shown in FIG point (A) place, it is thus achieved that relative to
The short-circuit condition on ground.Additionally, by impedance transformer (MSTL), point (B) shown in FIG
Place obtains open mode, and the signal path relevant to the second amplifier 104 does not interferes with and amplify with first
The relevant signal path of device 102.
In this article, the situation of the second bipolar transistor (TR2) is not included at switch element 106
Under, point (A) place shown in FIG, the positive amplitude of high-frequency signal is by the first bipolar transistor
(TR1) short circuit.But, do not include the second bipolar transistor (TR2) at switch element 106
In the case of, the electric current of the first bipolar transistor (TR1) is not shaking relative to the negative of high-frequency signal
The opposite direction flowing of width, therefore, the negative amplitude of point (A) place high-frequency signal shown in FIG is not
It is shorted.
On the other hand, include that second is ambipolar according to the switch element 106 of first embodiment of the invention
Transistor (TR2), wherein, emitter and collector is with relative to the first bipolar transistor (TR1)
Contrary mode connects, and as shown in fig. 1, therefore, the electric current of negative amplitude is flowable.Therefore, exist
Point (A) place shown in Fig. 1, switch element 106 can maintain the short-circuit condition of high-frequency signal.
Fig. 2 A and Fig. 2 B is to illustrate according to included in the switch element of first embodiment of the invention
The curve map of effect of the second bipolar transistor (TR2).In fig. 2a, it shows respectively
Include that the second bipolar transistor (TR2) and switch element do not include that second is bipolar at switch element
Interleaving at the first amplifier 102 and lead-out terminal (Pout) in the case of transistor npn npn (TR2)
Enter the loss relation relative to high-frequency signal power.Additionally, in fig. 2b, it is shown that opening respectively
Close unit and include that the second bipolar transistor (TR2) and switch element do not include the second ambipolar crystalline substance
In the case of body pipe (TR2), IMD between the first amplifier 102 and lead-out terminal (Pout)
(intermodulation distortion) is relative to the relation of high-frequency signal power.In this article, in Fig. 2 A and Fig. 2 B
Shown (A) indicates in the case of switch element includes the second bipolar transistor (TR2)
At switch element, (B) instruction shown in properties example, Fig. 2 A and Fig. 2 B does not include that second is bipolar
Properties example in the case of transistor npn npn (TR2).
As shown in Figure 2 A, by including the second bipolar transistor (TR2) at switch element 106,
Insertion loss between first amplifier 102 and lead-out terminal (Pout) is smaller than at switch element 106
Do not include the first amplifier 102 and lead-out terminal in the case of the second bipolar transistor (TR2)
(Pout) insertion loss between.Additionally, as shown in Figure 2 B, by wrapping at switch element 106
Including the second bipolar transistor (TR2), IMD is smaller than not including second pair at switch element 106
IMD in the case of bipolar transistor (TR2).
(2), when switch element 106 is switched on, the first amplifier 102 is not being operated but operation second
In the case of amplifier 104, it is possible to provide situations below.
Such as, it is high level when the voltage level controlling voltage (Vc0) and controls voltage (Vc1)
Voltage level when being low level, the first bipolar transistor (TR1) and the second bipolar transistor
(TR2) it is cut off.Therefore, the insertion between the second amplifier 104 and lead-out terminal (Pout)
Loss, i.e. the insertion loss of the signal path relevant to the second amplifier 104 can be further
Reduce.
In this article, in FIG, it is not set at according to the switch element of embodiment of the present invention
Between one amplifier 102 and outlet terminal (Pout), i.e. the letter relevant to the first amplifier 102
On number path, this is because the size of the transistor of the first amplifier 102 is more than the second amplifier 104
The size of transistor, thus in FIG shown in (B) point at, suppression uses and does not operates first
The impact that the impedance provided during amplifier 102 causes.I.e., although omitted in FIG,
But the amplifying device according to first embodiment of the invention can be at the letter relevant to the first amplifier 102
Include on number path constructing the switch identical with the structure of switch element 106.
Amplifying device 100 according to first embodiment of the invention includes the switch element shown in Fig. 1
106, it is thus ensured that each signal path relevant to the first amplifier 102 and with the second amplifier
104 relevant signal path isolation, and performance degradation can be prevented.
Additionally, amplifying device 100 can include being respectively included in the first amplifier 102 and the second amplifier
Bipolar transistor in 104 and the first and second ambipolar crystalline substances being included in switch element 106
Body pipe (TR1) and (TR2), and in this article, bipolar transistor can have and such as phosphatization
The identical types such as gallium indium HBT.That is, the first amplifier 102 and the second amplifier it is respectively included in
Bipolar transistor in 104 and the first and second ambipolar crystalline substances being included in switch element 106
Body pipe (TR1) is formed by identical technique with (TR2).In this article, implement according to the present invention
" being formed by identical technique " of mode represents that being respectively included in the first amplifier 102 and second amplifies
Bipolar transistor in device 104 and be included in switch element 106 first and second ambipolar
Transistor (TR1) is formed by identical technique with (TR2) simultaneously, or is divided by different technique
Do not formed.
Therefore, in amplifying device 100, may be included by different semiconductors by amplifier and switch
The situation of other semiconductor chips multiple of technique manufacture causes the chi of amplifying device (or amplification module)
The possibility that when very little increase, cost increase and assemble, disequilibrium increases reduces.Additionally, such as,
Amplifying device 100 can prevent from increasing that (such as, use can be by InGaP HBT due to technique price
When being configured to the complicated technology of single-chip with HEMT) cause cost up.
Therefore, amplifying device 100 can prevent performance degradation, reduces cost simultaneously.
(the second embodiment)
The structure of the amplifying device according to embodiment of the present invention is not limited to the structure shown in Fig. 1.Figure
3 for illustrating the circuit diagram of the structure example of the amplifying device 200 according to second embodiment of the invention.
In this article, amplifying device 200 fills with the amplification according to the first embodiment shown in Fig. 1
Putting 100 to compare, amplifying device 200 substantially has identical with the amplifying device 100 shown in Fig. 1
Structure, but the structure of switch element 202 is different from the switch element 106 shown in Fig. 1.More
Specifically, except the structure of the switch element 106 shown in Fig. 1, switch element 202 can be further
Including capacitor C1, one end of this capacitor is connected to the base stage of the second bipolar transistor (TR2),
Other end ground connection.
Capacitor (C1) can be used for reduce switch element 202 in an ON state in the case of (i.e.,
First bipolar transistor (TR1) and the second bipolar transistor (TR2) are in cut-off state)
Insertion loss between second amplifier 104 and lead-out terminal (Pout) increases and occurs distortion to move back
The possibility changed.
In this article, when switch element 202 in an ON state time, the second bipolar transistor (TR2)
Need to keep cut-off state.But, in the case of switch element 202 does not include capacitor (C1),
When the high-frequency signal inputted from input terminal (Pin) is high power signals, high frequency amplitude leaks into
In the base stage of the second bipolar transistor (TR2), thus the second bipolar transistor can not be kept
(TR2) cut-off state.
On the other hand, as shown in Figure 3, according to the switch element 202 of second embodiment of the invention
Including capacitor (C1), one end of this capacitor is connected to the second bipolar transistor (TR2)
Base stage, other end ground connection, therefore, by relative to high frequency vibrating web stabilization the second bipolar transistor
(TR2) base potential, can prevent the second bipolar transistor (TR2) from can not keep ending shape
State.
In this article, can be as the reality of the capacitance of capacitor (C1) by the capacitance of high frequency short circuit
Example.More specifically, the capacitance relative to the about 2pF of 1GHz frequency is used as capacitor
(C1) capacitance.Additionally, according to capacitor (C1) capacitance of embodiment of the present invention not
It is limited to this.
Fig. 4 A and Fig. 4 B is to illustrate according to included in the switch element of second embodiment of the invention
The curve map of effect of capacitor (C1).In Figure 4 A, it is shown that respectively at switch element bag
Include capacitor (C1) and switch element do not include capacitor (C1) in the case of amplify second
Between device 104 and lead-out terminal (Pout), insertion loss is relative to the relation of high-frequency signal power.This
Outward, in figure 4b, it is shown that include capacitor (C1) and switch element at switch element respectively
Do not include in the case of capacitor (C1) between the second amplifier 104 and lead-out terminal (Pout)
IMD is relative to the relation of high-frequency signal power.In this article, (A) shown in Fig. 4 A and Fig. 4 B
Instruction properties example in the case of switch element includes capacitor (C1), Fig. 4 A and Fig. 4 B
Shown in (B) instruction properties example in the case of switch element does not include capacitor (C1).
As shown in Figure 4 A, by including capacitor (C1) at switch element 202, second amplifies
Insertion loss between device 104 and lead-out terminal (Pout) is smaller than not including at switch element 202
Insertion loss between second amplifier 104 and lead-out terminal (Pout) in the case of capacitor.This
Outward, as shown in Figure 4 B, by including capacitor (C1) at switch element 202, IMD can be little
IMD in the case of not including capacitor (C1) at switch element 202.
Amplifying device 200 according to second embodiment of the invention can have the structure shown in Fig. 3,
Therefore, compared with the amplifying device 100 according to the first embodiment shown in Fig. 1, amplifying dress
The distortion relative to high-frequency signal amplitude can be reduced further in putting 200, and switch element can be realized
Switch in 202.Additionally, amplifying device 200 can have the structure shown in Fig. 3, therefore, very
To also reducing distortion in the case of high-frequency signal is high power signals.
Additionally, amplifying device 200 substantially have with according to the first embodiment shown in Fig. 1
The identical structure of structure of amplifying device 100.Therefore, with the amplifying device 100 shown in Fig. 1
The similar mode of mode, amplifying device 200 can prevent performance degradation, reduce cost simultaneously.
(another embodiment)
The structure of the amplifying device according to embodiment of the present invention is not limited to according to shown in Fig. 1
The structure of one embodiment or according to the structure of the second embodiment shown in Fig. 3.
Such as, the structure example of two power outputs of offer switch in Fig. 1 and Fig. 3, but basis
The amplifying device of embodiment of the present invention can include between each amplifier and lead-out terminal according to this
The switch element of invention embodiment, thus, the structure of switch at least three power output can be used.
Additionally, it is defeated to further include at each amplifier according to the amplifying device of embodiment of the present invention
Enter the switch list according to embodiment of the present invention on side (such as, point (C) side of Fig. 1 and Fig. 3)
Unit.
Equally, it has been described that according to the amplifying device of embodiment of the present invention, but the reality of the present invention
The mode of executing is not limited to this.Embodiments of the present invention can be used in different devices, and these devices can be located
Reason high-frequency signal, the communicator of the most such as mobile phone or smart phone, such as PC(people
Computer) or the display device of the computer of server, such as television set, video/music player (or
Video/music recording devices) etc..Additionally, embodiments of the present invention can be used for amplification module (or
Amplify IC(integrated circuit)) in, this amplification module can be coupled in said apparatus.
Such as, the switch element shown in the switch element 100 and Fig. 3 shown in Fig. 1 can be used
200(include according to amendment example switch) equivalent circuit, structure according to embodiment of the present invention
The switch element according to embodiment of the present invention that includes of amplifying device.
As it has been described above, according to the embodiment of the present invention, performance degradation can be prevented, reduce cost simultaneously.
Although illustrate and describe the present invention already in connection with embodiment, but for those skilled in the art
For Yuan, in the situation of the spirit and scope of the present invention limited without departing substantially from appended claims
Under, it is clear that can modify and modification.
Claims (3)
1. an amplifying device, including:
First amplifier, is connected to input terminal and the output high-frequency signal of input high-frequency signal
Lead-out terminal between, including bipolar transistor, amplify and to input from described input terminal
High-frequency signal；
Second amplifier, including bipolar transistor, amplification inputs from described input terminal
High-frequency signal, has the maximum work output lower than the peak power output of described first amplifier
Rate；And
Switch element, is connected between described second amplifier and described lead-out terminal, passes through
Described lead-out terminal optionally exports the high-frequency signal amplified by described second amplifier,
Described switch element includes:
Impedance transformer, is arranged on the letter between described second amplifier and described lead-out terminal
On number line, perform impedance transformation,
First bipolar transistor, wherein, grounded emitter, colelctor electrode is connected to described
Holding wire, according to the electric current controlling voltage for controlling the operation of described switch element breaker in middle
It is applied to base stage, and
Second bipolar transistor, wherein, grounded collector, emitter stage is connected to described
Holding wire, is applied to base stage according to the described electric current of described control voltage.
Amplifying device the most according to claim 1, wherein, described switch element farther includes
Capacitor, one end of described capacitor is connected to the base stage of described second bipolar transistor,
Other end ground connection.
Amplifying device the most according to claim 1 and 2, wherein, described first amplifier and institute
State described bipolar transistor that the second amplifier includes and described switch element includes
Described first bipolar transistor with described second bipolar transistor by identical technique shape
Become.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011269200A JP5714475B2 (en) | 2011-12-08 | 2011-12-08 | Amplifier |
| JP2011-269200 | 2011-12-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103166579A CN103166579A (en) | 2013-06-19 |
| CN103166579B true CN103166579B (en) | 2016-09-07 |
Family
ID=48571431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210357297.8A Expired - Fee Related CN103166579B (en) | 2011-12-08 | 2012-09-21 | Amplifying device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8860506B2 (en) |
| JP (1) | JP5714475B2 (en) |
| KR (1) | KR101503973B1 (en) |
| CN (1) | CN103166579B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104378071B (en) * | 2014-11-07 | 2017-10-10 | 北京旋极星源技术有限公司 | A kind of wideband power amplifer chip and amplifier for radar system |
| JP2017183839A (en) * | 2016-03-28 | 2017-10-05 | 株式会社村田製作所 | Power amplifier circuit |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012719B2 (en) * | 1976-06-08 | 1985-04-03 | 三菱電機株式会社 | sample hold circuit |
| JPH07307390A (en) * | 1994-05-13 | 1995-11-21 | Hitachi Ltd | Semiconductor device |
| US5832305A (en) * | 1996-12-02 | 1998-11-03 | Ncr Corporation | Multiple stage analog bi-directional selector utilizing coupled pairs of bi-polar junction transistors connected to pull-up resistors |
| GB2344689A (en) * | 1998-12-07 | 2000-06-14 | Ericsson Telefon Ab L M | Analogue switch |
| JP2001211090A (en) | 2000-01-28 | 2001-08-03 | Matsushita Electric Ind Co Ltd | High frequency power amplifying circuit and portable telephone terminal using the same |
| JP2002185270A (en) * | 2000-12-18 | 2002-06-28 | Matsushita Electric Ind Co Ltd | Power amplifier and communication apparatus |
| US7102444B2 (en) * | 2004-01-20 | 2006-09-05 | Anadigics, Inc. | Method and apparatus for compensating and improving efficiency in a variable power amplifier |
| US7135919B2 (en) * | 2004-08-06 | 2006-11-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Power amplifier with switchable load |
| JP2007013451A (en) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | Switch circuit, light reception amplifier circuit and optical pickup device |
| JP2007019578A (en) * | 2005-07-05 | 2007-01-25 | Hitachi Ltd | Power amplifier and transmitter employing the same |
| DE102005050622A1 (en) * | 2005-10-21 | 2007-05-03 | Infineon Technologies Ag | Transmitter output stage for mobile communication system, has two matching networks connected at signal outputs of amplifier stages, where one of networks has matching unit and switch for alternatively changing impedance of unit |
| CN201438689U (en) * | 2009-04-30 | 2010-04-14 | 惠州市正源微电子有限公司 | High and low power combining circuit for RF power amplifier |
| CN101562425B (en) * | 2009-05-26 | 2011-06-22 | 惠州市正源微电子有限公司 | High-low power combining circuit for radio-frequency power amplifier |
| JP5620804B2 (en) * | 2010-12-16 | 2014-11-05 | ルネサスエレクトロニクス株式会社 | High frequency power amplifier |
-
2011
- 2011-12-08 JP JP2011269200A patent/JP5714475B2/en not_active Expired - Fee Related
-
2012
- 2012-04-17 KR KR1020120039692A patent/KR101503973B1/en active IP Right Grant
- 2012-09-11 US US13/610,538 patent/US8860506B2/en not_active Expired - Fee Related
- 2012-09-21 CN CN201210357297.8A patent/CN103166579B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5714475B2 (en) | 2015-05-07 |
| KR20130064679A (en) | 2013-06-18 |
| CN103166579A (en) | 2013-06-19 |
| US8860506B2 (en) | 2014-10-14 |
| US20130147551A1 (en) | 2013-06-13 |
| KR101503973B1 (en) | 2015-03-18 |
| JP2013121131A (en) | 2013-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | A linear multi-mode CMOS power amplifier with discrete resizing and concurrent power combining structure | |
| JP4954202B2 (en) | Circuit and method for implementation of a power amplifier for millimeter wave applications | |
| Jin et al. | Linearization of CMOS cascode power amplifiers through adaptive bias control | |
| CN104779922B (en) | For optimizing the high voltage envelope tracker of radio-frequency power amplifier performance | |
| CN103814521B (en) | Power amplifier and method of operating thereof | |
| US11201595B2 (en) | Cascode power amplifier with switchable output matching network | |
| JP2012129844A (en) | High frequency power amplification device | |
| CN103580610B (en) | Multimode power amplifier and corresponding mobile communication terminal | |
| CN107911086A (en) | The radio-frequency power amplifier and radio frequency communication terminal of a kind of high linearity | |
| Li et al. | A 110-to-130 ghz sige bicmos doherty power amplifier with a slotline-based power combiner | |
| JP2011015240A (en) | High-frequency power amplifier | |
| WO2024222367A1 (en) | Radio frequency power amplifier and radio frequency power amplifier module | |
| CN101888214A (en) | Cascode power amplifier with improved efficiency and linearity | |
| CN104485907A (en) | High-efficiency multimode radio frequency power amplifier | |
| CN109194291A (en) | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality | |
| CN107306118A (en) | Power amplifier module | |
| JP5313970B2 (en) | High frequency power amplifier | |
| CN103166579B (en) | Amplifying device | |
| Wickert et al. | Analysis of totem-pole drivers in SiGe for RF and wideband applications | |
| Yamamoto et al. | A WCDMA multiband power amplifier module with Si-CMOS/GaAs-HBT hybrid power-stage configuration | |
| CN213990606U (en) | Doherty power amplifier based on combined parallel resonant network | |
| CN109327194A (en) | A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality | |
| CN116232246A (en) | Radio frequency power amplifier | |
| CN112636706A (en) | Power amplification circuit and electronic device | |
| Tu et al. | 5.25 GHz CMOS cascode power amplifier for 802.11 a wireless local area network |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 |