CN103165590A - Light emitting diode (LED) and down-straight type backlight source - Google Patents
Light emitting diode (LED) and down-straight type backlight source Download PDFInfo
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- CN103165590A CN103165590A CN201110417222XA CN201110417222A CN103165590A CN 103165590 A CN103165590 A CN 103165590A CN 201110417222X A CN201110417222X A CN 201110417222XA CN 201110417222 A CN201110417222 A CN 201110417222A CN 103165590 A CN103165590 A CN 103165590A
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- reflector
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- emitting diode
- groove
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Abstract
A light emitting diode (LED) comprises a substrate, an LED chip, a first electrode, a second electrode, a sealing layer and a reflecting layer. The substrate is provided with a groove, the reflecting layer is attached to the bottom face of the groove, the LED chip is placed inside the groove and placed above the reflecting layer, and the sealing layer is filled in the groove of the substrate to cover the reflecting layer and wrap the LED chip. The reflecting layer comprises a first reflecting layer and a second reflecting layer. The first reflecting layer is placed in the center of the bottom face of the groove, and the second reflecting layer surrounds the periphery of the first reflecting layer and is connected with the first reflecting layer. The surface of the first reflecting layer is a convex face, and the surface of the second reflecting layer is a concave face. The LED chip is electrically connected with the first electrode and the second electrode, and the LED chip is provided with a light-emitting face which is opposite to the reflecting layer. The invention further provides a down-straight type backlight source with the LED.
Description
Technical field
The present invention relates to the direct-light-type backlight of a kind of light-emitting diode and a kind of this light-emitting diode of application.
Background technology
Light-emitting diode is a kind of energy-saving and environmental protection, long-life solid light source, and therefore always very active to the research of LED technology in recent ten years, light-emitting diode also has the trend of conventional light source such as gradually replacing fluorescent lamp, incandescent lamp.
The light-emitting diode of prior art generally includes a substrate, a reflector, a light-emitting diode chip for backlight unit and an encapsulated layer, the reflector is attached to substrate surface, this light-emitting diode chip for backlight unit is positioned at the top in this reflector, this light-emitting diode chip for backlight unit has one towards the exiting surface in this reflector, and this encapsulated layer covers this reflector and coats this light-emitting diode chip for backlight unit.The light that light-emitting diode chip for backlight unit sends is towards the reflector, and the reflector is arrived light reflection extraneous.Yet the light intensity of single light-emitting diode side direction emergent light is less, when using this light-emitting diodes pipe manufacturer backlight, and need to be with a plurality of light-emitting diode denses ground spread configuration on a panel.Because the quantity of the light-emitting diode that uses is more, between each light-emitting diode, to each other distance is less, each light-emitting diode produces more heat when work, backlight is interior because several focuses (hot spot) can appear in heat accumulation, if heat distributes untimelyly, the excess Temperature of light-emitting diode can't be worked, even be burned.
Summary of the invention
In view of this, be necessary to provide a kind of direct-light-type backlight that has the light-emitting diode of stronger side direction bright dipping and use this light-emitting diode.
a kind of light-emitting diode, comprise a substrate, a light-emitting diode chip for backlight unit, the first electrode, the second electrode, an encapsulated layer and a reflector, this substrate is offered a groove, described reflector is attached on the bottom surface of this groove, this light-emitting diode chip for backlight unit is placed in this groove and is positioned at the top in this reflector, this encapsulated layer is filled in the groove of this substrate to cover this reflector and to coat this light-emitting diode chip for backlight unit, this reflector comprises first reflector and second reflector, it is central that this first reflector is positioned at this groove floor, this second reflector is looped around the peripheral of this first reflector and is connected with the first reflector, the surface in the first reflector is the convex surface towards this light-emitting diode chip for backlight unit projection, the surface in the second reflector is concave surface, this light-emitting diode chip for backlight unit is electrically connected to this first electrode and the second electrode, this light-emitting diode chip for backlight unit has an exiting surface relative with this reflector.
A kind of direct-light-type backlight of using above-mentioned light-emitting diode, comprise a backboard, a plurality of above-mentioned light-emitting diode, be placed in an optics module of this backboard top and be around in a framework around this backboard, this a plurality of light-emitting diodes compartment of terrain is arranged on this backboard, and the light that sends from light-emitting diode passes this optics module and outwards penetrates.
Because the surface in the first reflector is that convex surface has disperse function to light, more incident ray can be by the direction of the first reflective layer reflects to the light-emitting diode chip for backlight unit both sides, make the light intensity of light-emitting diode chip for backlight unit both sides larger, light-emitting diode has stronger lateral light.In above-mentioned direct-light-type backlight, because single light-emitting diode has stronger lateral light, distance between each light-emitting diode can arrange larger, has both reduced the quantity of the light-emitting diode that uses, and can prevent from again that heat from accumulating to be beneficial to timely heat radiation in direct-light-type backlight.
Description of drawings
Fig. 1 is the cutaway view of the light-emitting diode of a preferred embodiment of the present invention.
Fig. 2 is the vertical view corresponding with the light-emitting diode in Fig. 1.
Fig. 3 is the index path in light-emitting diode when work in Fig. 1.
Figure 4 shows that the angle of emergence of the light-emitting diode emergent light in reflection Fig. 1 and the coordinate diagram of light intensity Relations Among.
Fig. 5 is the cross-sectional schematic of the direct-light-type backlight of a light-emitting diode in application drawing 1.
The main element symbol description
| |
10 |
| Groove | 101 |
| Light- |
100 |
| Light-emitting diode chip for |
11 |
| The |
12 |
| The |
12a |
| Encapsulated |
14 |
| The |
15 |
| The |
151 |
| The |
152 |
| The |
153 |
| The |
13 |
| The |
13a |
| |
132 |
| |
133 |
| |
170 |
| Direct-light- |
200 |
| |
20 |
| The |
22 |
| Diffuser |
222 |
| The first |
224 |
| The second |
226 |
| Framework | 24 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Be the light-emitting diode of a preferred embodiment of the present invention as shown in Figures 1 and 2, this light-emitting diode 100 comprises a substrate 10, light-emitting diode chip for backlight unit 11, first, second connector 12,12a, first, second electrode 13,13a, an encapsulated layer 14 and a reflector 15.
This substrate 10 is offered a groove 101.The bottom surface of this groove 101 is provided with one deck reflecting material, forms described reflector 15.The 3rd reflector 153 that this reflector 15 comprises first reflector 151 being positioned at this groove 101 bottom surface central authorities, be looped around the periphery in the first reflector 151 and second reflector 152 that is connected with the first reflector 151 and the periphery that is looped around the second reflector 152 and be connected with the second reflector 152.The surface in the first reflector 151, the second reflector 152 and the 3rd reflector 153 is cambered surface.The surface in the first reflector 151 is the convex surface towards these light-emitting diode chip for backlight unit 11 projections, and the surface in the second reflector 152 and the 3rd reflector 153 is concave surface.The curvature in the second reflector 152 is less than the curvature in the 3rd reflector 153.The depth D 1 of the second reflector 152 in this groove 101 is not less than the depth D 2 of the 3rd reflector 153 in this groove 101.The depth D 1 of the second reflector 152 in this groove 101 reduces gradually from the direction away from the first reflector 151, and the depth D 2 of the 3rd reflector 153 in this groove 101 reduces gradually from the direction away from the second reflector 152.Junction in the second reflector 152 and the 3rd reflector 153, the depth D 1 of the second reflector 152 in this groove 101 has minimum value, and the depth D 2 of the 3rd reflector 153 in this groove 101 has maximum.
Described first, second electrode 13,13a are arranged on the upper surface of this substrate 10.Each in first, second electrode 13,13a comprises first paragraph 132 and narrower second segment 133 of a wider width.The first paragraph 132 of first, second electrode 13,13a is arranged on outside groove 101 and is positioned at the opposite end of this substrate 10.The second segment 133 of first, second electrode 13,13a extends to the middle position of the opening of this groove 101, each interval from first paragraph 132.Above-mentioned first, second connector 12,12a conduction is connected to the lower surface of end of the second segment 133 of first, second electrode 13,13a.The width of second segment 133 is less than the width of first paragraph 132, the light that disturbs light-emitting diode chip for backlight unit 11 to send with first, second electrode 13 of reduce, 13a.
This light-emitting diode chip for backlight unit 11 is placed in this groove 101, and is positioned at the central authorities of the opening of this groove 101.This light-emitting diode chip for backlight unit 11 and this reflector 15 are separately.This light-emitting diode chip for backlight unit 11 has an exiting surface, and the exiting surface of this light-emitting diode chip for backlight unit 11 is towards this reflector 15.This light-emitting diode chip for backlight unit 11 is not arranged on the place, focal position on the surface in the second reflector 152, covers the light of outgoing to avoid this light-emitting diode chip for backlight unit 11.Two electrodes of this light-emitting diode chip for backlight unit 11 are connected with above-mentioned first, second connector 12,12a conduction respectively.
This encapsulated layer 14 is filled in for light-transmitting materials in the groove 101 of this substrate 10, these encapsulated layer 14 these light-emitting diode chip for backlight unit 11 of coating and first, second connector 12,12a, the upper surface flush of the exiting surface of this encapsulated layer 14 and substrate 10.Alternatively, can be for example to mix fluorescent material 170 near the exiting surface of encapsulated layer 14 in this encapsulated layer 14, to change the outgoing light wavelength.
As shown in Figure 3, a part of light that light-emitting diode chip for backlight unit 11 sends reflexes to the external world by the first reflector 151, and a part of light reflexes to the external world by the second reflector 152, and a part of light reflexes to the external world by the 3rd reflector 153.
Figure 4 shows that the angle of emergence of these light-emitting diode 100 emergent lights of reflection and the coordinate diagram of light intensity Relations Among.Because the surface in the first reflector 151 is that convex surface has disperse function to light, the light of a part of incident can be by the direction of the first reflector 151 reflections to light-emitting diode chip for backlight unit 11 both sides; Again due to the curvature in the 3rd reflector 153 curvature greater than the second reflector 152, the more light reflection that light-emitting diode chip for backlight unit 11 is sent in the 3rd reflector 153 is to the direction of light-emitting diode chip for backlight unit 11 both sides, make the light intensity of light-emitting diode 100 emergent lights be maximum near the angle of emergence is 60 degree, be also the light intensity of light-emitting diode chip for backlight unit 11 both sides for maximum, light-emitting diode 100 has stronger lateral light.
Figure 5 shows that a schematic diagram that adopts the direct-light-type backlight 200 of above-mentioned light-emitting diode 100.This direct-light-type backlight 200 comprises that backboard 20, a space are arranged at a plurality of light-emitting diodes 100 on this backboard 20, are placed in an optics module 22 of this light-emitting diode 100 tops and are around in a framework 24 around this backboard 20.
This optics module 22 comprises a diffuser plate 222, first brightness enhancement film 224, and second brightness enhancement film 226.The equalizing light rays that this diffuser plate 222 can send a plurality of light-emitting diodes 100, this first brightness enhancement film 224 and the second brightness enhancement film 226 can be concentrated homogenizing light and be specific angle ejaculation.
In above-mentioned direct-light-type backlight 200, because single light-emitting diode 100 has stronger lateral light, can arrange larger apart from d between each light-emitting diode 100, both reduced the quantity of the light-emitting diode 100 that uses, can prevent that again heat in the interior accumulation of direct-light-type backlight 200, is beneficial to timely heat radiation.
Claims (8)
1. light-emitting diode, comprise a substrate, a light-emitting diode chip for backlight unit, the first electrode, the second electrode, an encapsulated layer and a reflector, it is characterized in that: this substrate is offered a groove, described reflector is attached on the bottom surface of this groove, this light-emitting diode chip for backlight unit is placed in this groove and is positioned at the top in this reflector, this encapsulated layer is filled in the groove of this substrate to cover this reflector and to coat this light-emitting diode chip for backlight unit, this reflector comprises first reflector and second reflector, it is central that this first reflector is positioned at this groove floor, this second reflector is looped around the peripheral of this first reflector and is connected with this first reflector, this first reflector is towards this light-emitting diode chip for backlight unit projection, the surface in this second reflector is concave surface, this light-emitting diode chip for backlight unit is electrically connected to this first electrode and the second electrode, this light-emitting diode chip for backlight unit has one towards the exiting surface in this reflector.
2. light-emitting diode as claimed in claim 1, it is characterized in that: this light-emitting diode chip for backlight unit departs from the focal position on the surface in the second reflector.
3. light-emitting diode as claimed in claim 1, it is characterized in that: this reflector also comprises the 3rd reflector, the 3rd reflector is looped around the peripheral of this second reflector and is connected with the second reflector, the surface in this second reflector and the 3rd reflector is concave surface, and the curvature in this second reflector is less than the curvature in the 3rd reflector.
4. light-emitting diode as claimed in claim 3, it is characterized in that: this second reflector degree of depth in this groove is more than or equal to the degree of depth of the 3rd reflector in this groove.
5. light-emitting diode as claimed in claim 4, it is characterized in that: this second reflector degree of depth in this groove reduces gradually from the direction away from this first reflector, and the degree of depth of the 3rd reflector in this groove reduces gradually from the direction away from this second reflector.
6. light-emitting diode as claimed in claim 5 is characterized in that: the junction in this second reflector and the 3rd reflector, and this second reflector degree of depth in this groove has minimum value, and the degree of depth of the 3rd reflector in this groove has maximum.
7. light-emitting diode as claimed in claim 1, it is characterized in that: this light-emitting diode chip for backlight unit and this reflector are separately.
8. direct-light-type backlight, an optics module that comprises a backboard and be placed in this backboard top, it is characterized in that: this direct-light-type backlight also comprises a plurality of as the described light-emitting diode of claim 1-7 any one, this a plurality of light-emitting diodes compartment of terrain is arranged on this backboard, and the light that sends from light-emitting diode passes this optics module and outwards penetrates.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110417222.XA CN103165590B (en) | 2011-12-14 | 2011-12-14 | Light-emitting diode and direct-light-type backlight |
| TW100147075A TW201324866A (en) | 2011-12-14 | 2011-12-19 | LED and direct type backlight source using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110417222.XA CN103165590B (en) | 2011-12-14 | 2011-12-14 | Light-emitting diode and direct-light-type backlight |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103165590A true CN103165590A (en) | 2013-06-19 |
| CN103165590B CN103165590B (en) | 2015-11-25 |
Family
ID=48588547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110417222.XA Active CN103165590B (en) | 2011-12-14 | 2011-12-14 | Light-emitting diode and direct-light-type backlight |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103165590B (en) |
| TW (1) | TW201324866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106164579A (en) * | 2014-05-20 | 2016-11-23 | 飞利浦照明控股有限公司 | The illumination of conformal coating or irradiation system |
| CN114464718A (en) * | 2017-10-26 | 2022-05-10 | 晶元光电股份有限公司 | Light emitting device |
| CN117038818A (en) * | 2023-10-08 | 2023-11-10 | 盐城鸿石智能科技有限公司 | High-reflection micro LED and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544262B (en) * | 2023-06-09 | 2023-10-20 | 盐城鸿石智能科技有限公司 | Micro LED display panel with high light emitting utilization rate and preparation method thereof |
-
2011
- 2011-12-14 CN CN201110417222.XA patent/CN103165590B/en active Active
- 2011-12-19 TW TW100147075A patent/TW201324866A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106164579A (en) * | 2014-05-20 | 2016-11-23 | 飞利浦照明控股有限公司 | The illumination of conformal coating or irradiation system |
| CN106164579B (en) * | 2014-05-20 | 2018-09-18 | 飞利浦照明控股有限公司 | A kind of lighting apparatus and manufacturing method |
| CN114464718A (en) * | 2017-10-26 | 2022-05-10 | 晶元光电股份有限公司 | Light emitting device |
| CN117038818A (en) * | 2023-10-08 | 2023-11-10 | 盐城鸿石智能科技有限公司 | High-reflection micro LED and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201324866A (en) | 2013-06-16 |
| CN103165590B (en) | 2015-11-25 |
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