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CN103077983A - Multi-junction solar battery and preparation method thereof - Google Patents

Multi-junction solar battery and preparation method thereof Download PDF

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Publication number
CN103077983A
CN103077983A CN201210582092XA CN201210582092A CN103077983A CN 103077983 A CN103077983 A CN 103077983A CN 201210582092X A CN201210582092X A CN 201210582092XA CN 201210582092 A CN201210582092 A CN 201210582092A CN 103077983 A CN103077983 A CN 103077983A
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battery
band gap
sub
solar cell
multijunction solar
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毕京锋
林志东
蔡文必
林桂江
刘建庆
宋明辉
丁杰
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Tianjin Sanan Optoelectronics Co Ltd
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Tianjin Sanan Optoelectronics Co Ltd
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Priority to CN201210582092XA priority Critical patent/CN103077983A/en
Publication of CN103077983A publication Critical patent/CN103077983A/en
Priority to PCT/CN2013/088301 priority patent/WO2014101631A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a reverse multi-junction solar battery and a preparation method thereof. The multi-junction solar cell comprises a substrate, a first sub-battery, a second sub-battery, a third sub-battery, a fourth sub-battery, a gradient buffering layer and a fifth sub-battery, wherein the first sub-battery reversely grows on the substrate and is provided with a first band gap; the second sub-battery is reversely formed on the first sub-battery and is provided with a second band gap smaller than the first band gap; the third sub-battery is reversely formed on the second sub-battery and is provided with a third band gap smaller than the second band gap; the fourth sub-battery is reversely formed on the third sub-battery and is provided with a fourth band gap smaller than the third band gap; the first sub-battery, the second sub-battery, the third sub-battery and the fourth sub-battery are in lattice matching with the substrate; the gradient buffering layer is formed on the fourth sub-battery, is used for overcoming the lattice mismatching between the fourth sub-battery and the fifth sub-battery and is provided with a fifth band gap smaller than the fourth band gap; and the fifth sub-battery is reversely formed on the homogeneous gradient buffering layer and is provided with a sixth band gap smaller than the fifth band gap. Through various later-stage processes, the required solar battery is obtained. The high-efficiency multi-junction solar battery with current matching and wider spectral-absorbing range can be prepared through the invention.

Description

Multijunction solar cell and preparation method thereof
Technical field
The present invention relates to a kind of multijunction solar cell and preparation method thereof, belong to technical field of semiconductor.
Background technology
In recent years, solar cell has attracted increasing concern as the new forms of energy of practicality.It is a kind of photovoltaic effect of utilizing, and solar energy is changed into the semiconductor device of electric energy, and this has reduced the dependence of people's productive life to coal, petroleum and natural gas to a great extent, becomes one of effective means of utilizing green energy resource.In all new forms of energy, solar energy is one of ideal renewable energy resources, fully develops the energy strategy decision-making that solar energy becomes the sustainable development of countries in the world government.In the last few years, as the light-focusing multi-junction compound solar cell of third generation photovoltaic power generation technology, because its high-photoelectric transformation efficiency receives much attention.
Current efficient GaInP/GaAs/Ge three-junction solar battery has obtained to surpass 41.8% photoelectric conversion efficiency under the optically focused condition.But since at the bottom of the Ge the too much absorption of battery lower energy photon, thereby with InGaP and GaAs in the short circuit current of top battery do not mate, so traditional GaInP/GaAs/Ge three-junction solar battery structure is not the combination of efficiency optimization.Under the ideal state, if can seek the material substitution Ge that energy gap is 1eV, just can realize three junction battery currents match.In 0.3Ga 0.7As has the energy gap of 1eV, is one of best selection, but has 2.14% lattice mismatch between itself and the GaAs.Adopt the upside-down mounting mode to grow: the In of first growth and substrate GaAs Lattice Matching 0.5Ga 0.5Top battery among P and the GaAs; And then be transitioned into battery at the bottom of the InGaAs by graded buffer layer (InGaP, InAlP or InGaAs); Follow-up substrate desquamation, the techniques such as new substrate bonding are progressively implemented, and realize the full structure preparation of whole battery.Technical difficult points in the whole preparation process is: overcome from GaAs lattice constant 0.5653 nm to In 0.3Ga 0.72.15% the lattice mismatch that produces during the 0.5775 nm transition of As lattice constant, the namely growth of heterojunction graded buffer layer.
Summary of the invention
The invention provides a kind of thinking of the 1eV of acquisition battery, it introduces the homogeneity graded buffer layer, can obtain dislocation density lower, the better sub-battery of crystal mass.
According to an aspect of the present invention, a kind of multijunction solar cell comprises end battery, battery of the inferior end and top battery at least, and lattice does not mate between end battery and time end battery, between end battery and time end battery, also comprise graded buffer layer, the homogenous materials of itself and end battery.
Preferentially, described graded buffer layer and end battery homogeneity, its material is GaAs 1-x N x , the numerical value of x is 0 ~ 0.0376.GaAs 1-x N x , in the x material, when the component of N progressively was increased to 3.76%, the band gap of material was reduced to 1eV(as shown in Figure 1 by the 1.42eV of GaAs).Utilize GaAsN to make the homogeneous buffer layer technology of graded buffer layer and sub-battery, can obtain dislocation density lower, the better 1eV battery of crystal mass.This technology is applied in the full structure of upside-down mounting multijunction cell, has prepared the high performance solar batteries of currents match, low-dislocation-density.
In certain embodiments, described multijunction solar cell is three-joint solar cell, and wherein the band gap of end battery is 1.15 ~ 0.95eV, and the band gap of battery of the inferior end is 1.45 ~ 1.36eV, and the band gap of top battery is 1.95 ~ 1.85eV.
In certain embodiments, described multijunction solar cell is four-junction solar cell, and wherein the band gap of end battery is 1.15 ~ 0.95eV, and the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.65 ~ 1.55eV, and the band gap of top battery is 1.95 ~ 1.85eV.
In certain embodiments, described multijunction solar cell is four-junction solar cell, and wherein the band gap of end battery is 1.15 ~ 0.95eV, and the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.95 ~ 1.85eV, and the band gap of top battery is 2.24 ~ 2.05eV.
In certain embodiments, described multijunction solar cell is five-junction solar cell, wherein the band gap of end battery is 1.15 ~ 0.95eV, the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.65 ~ 1.55eV, the band gap of inferior top battery is 1.95 ~ 1.85eV, and the band gap of top battery is 2.24 ~ 2.05eV.
According to a second aspect of the invention, the manufacture method of multijunction solar cell, it comprises step: 1) the upside-down mounting semiconductor material layer of each knot battery of growing, its to lower and on comprise top battery, electricity of the inferior end, graded buffer layer and end battery, wherein, lattice does not mate the homogenous materials of the material of graded buffer layer and end battery between end battery and time end battery; 2) provide a supporting substrate, described semiconductor material layer counter-rotating is placed on the described supporting substrate.
In the present invention, utilize GaAs 1-x N x The characteristic of band gap fast-descending when material band gap progressively increases along with the N component can be reduced to the band gap of GaAs about 1 eV by 1.42 eV in a small amount of adding of N element, utilizes simultaneously GaAs 1-x N x Material is as the homogeneity graded buffer layer, and the gradual change of small component multilayer progressively discharges stress, effectively reduces dislocation density.By this battery structure reasonable disposition the band gap of each sub-battery, widen the spectral absorption scope of solar cell, formed the high-efficiency multi-junction solar cell of currents match.
Description of drawings
Fig. 1 has represented GaAs 1-x N x The graph of a relation of material N component and band gap.
Fig. 2 ~ Fig. 3 has represented the structural representation of a kind of upside-down mounting multijunction solar cell of the preferred embodiment of the present invention.
Among the figure:
100 growth substrates
101 supporting substrates
200 etching cutoff layers
300 first sub-batteries
301 first sub-battery Window layer
302 first sub-battery emitter regions
303 first sub-battery bases
304 first sub-cell back fields
Tunnel junctions between 400 first and second sub-batteries
500 second sub-batteries
501 second sub-battery Window layer
502 second sub-battery emitter regions
503 second sub-battery bases
504 second sub-cell back field layers
Tunnel junctions between 410 second and third sub-batteries
600 the 3rd sub-batteries
601 the 3rd sub-battery Window layer
602 the 3rd sub-battery emitter regions
603 the 3rd sub-battery bases
604 the 3rd sub-cell back field layers
Tunnel junctions between 420 third and fourth sub-batteries
700 the 4th sub-batteries
701 the 4th sub-battery Window layer
702 the 4th sub-battery emitter regions
703 the 4th sub-battery bases
704 the 4th sub-cell back field layers
Tunnel junctions between 430 fourth, fifth sub-batteries
800 homogeneity graded buffer layers
900 the 5th sub-batteries
901 the 5th sub-battery Window layer
902 the 5th sub-battery emitter regions
903 the 5th sub-battery bases
904 the 5th sub-cell back field layers
102 heavy doping block layer.
Embodiment
Now details of the present invention be will describe, exemplary invention of the present invention and embodiment comprised.Referring to diagram and following description.The invention will be further described below in conjunction with embodiment, but should not limit protection scope of the present invention with this.
Below each embodiment a kind of upside-down mounting solar cell and preparation method thereof is disclosed, it introduces the homogeneity graded buffer layer between end battery and battery of the inferior end, can obtain dislocation density lower, the better sub-battery of crystal mass.This structure can be applicable to three knots, four knots, five-junction solar cell, distributes according to actual needs band gap.The band gap that table 1 has exemplified three to five junction batteries distributes.
Table 1, upside-down mounting multijunction solar cell structure and band gap thereof distribute.
Sub-battery Eg1 Eg2 Eg3 Eg4 Eg5
Three knots 1.95~1.85eV 1.45~1.36eV 1.15~0.95eV ? ?
Four knots 1.95~1.85eV 1.65~1.55eV 1.45~1.36eV 1.15~0.95eV ?
Four knots 2.24~2.05eV 1.95~1.85eV 1.45~1.36eV 1.15~0.95eV ?
Five knots 2.24~2.05eV 1.95~1.85eV 1.65~1.55eV 1.45~1.36eV 1.15~0.95eV
Embodiment one
The present embodiment discloses a kind of upside-down mounting five-junction solar cell, below in conjunction with growing method its structure is specifically described.
At first, in the MOCVD system, select p-type GaAs substrate 100, its doping content is 2 * 10 17Cm -3--5 * 10 17Cm -3By layer 200, its thickness is 150 nm in substrate surface epitaxial growth GaInP etching, mixes to be about 1 * 10 18Cm -3
Next step, at etching upside-down mounting growth AlGaInP first sub-battery 300 above layer 200, its band gap is 2.2 eV, specifically comprises: N-shaped AlGaInP Window layer 301, its thickness is 25 nm, doping content is 1 * 10 18Cm -3About; Emitter region 302 thickness are 150 nm, and doping content is 2 * 10 18Cm -3Base 303 thickness preferred values are 900 nm, and doping content is 5 * 10 17Cm -3P-type AlGaInP back surface field layer 304, its thickness is 50 nm, doping content is 1 * 10 18Cm -3About.
Next step, the heavily doped p++/n++-AlGaAs tunnel junctions 400 of growth above the first sub-battery, its thickness is 50 nm, doping content is up to 2 * 10 19Cm -3
Next step, upside-down mounting growth GaInP the second sub-battery 500 above tunnel junctions 400, its band gap is 1.89 eV, specifically comprises: N-shaped AlGaInP Window layer 501, its thickness is 25 nm, doping content is 1 * 10 18Cm -3About; Emitter region 502 thickness are 150 nm, and doping content is 2 * 10 18Cm -3Base 503 thickness preferred values are 900 nm, and doping content is 5 * 10 17Cm -3P-type AlGaInP back surface field layer 504, its thickness is 50 nm, doping content is 1 * 10 18Cm -3About.
Next step, the heavily doped p++/n++-AlGaAs tunnel junctions 410 of the second sub-battery top growth, its thickness is 50 nm, doping content is up to 2 * 10 19Cm -3
Next step, upside-down mounting growth AlGaAs the 3rd sub-battery 600 above tunnel junctions 410, its band gap is 1.6 eV, specifically comprises: N-shaped GaInP Window layer 601, its thickness is 25 nm, doping content is 1 * 10 18Cm -3About; Emitter region 602 thickness are 200 nm, and doping content is 2 * 10 18Cm -3Base 603 thickness preferred values are 1200 nm, and doping content is 5 * 10 17Cm -3P-type GaInP back surface field layer 604, its thickness is 50 nm, doping content is 1 * 10 18Cm -3About.
Next step, the heavily doped p++/n++-AlGaAs tunnel junctions 420 of growth above the 3rd sub-battery, its thickness is 50 nm, doping content is up to 2 * 10 19Cm -3
Next step, upside-down mounting growth GaAs the 4th sub-battery 700 above tunnel junctions 420, its band gap is 1.42 eV, specifically comprises: N-shaped GaInP Window layer 701, its thickness is 25 nm, doping content is about 1 * 1018cm-3; Emitter region 702 thickness are 250 nm, and doping content is 2 * 10 18Cm -3Base 703 thickness preferred values are 1500 nm, and doping content is 5 * 10 17Cm -3P-type GaInP back surface field layer 704, its thickness is 50 nm, doping content is 1 * 10 18Cm -3About.
Next step, the heavily doped p++/n++-GaAs tunnel junctions 430 of growth above the 4th sub-battery 700, its thickness is 50 nm, doping content is up to 2 * 10 19Cm -3
Next step, GaAs grows above tunnel junctions 430 1-x N x Graded buffer layer 800 is grown altogether 8 layers, and every layer thickness is 250 nm, and the excursion of N component x is 0 ~ 0.0376, and every layer of doping content all is controlled at 1 * 10 18Cm -3, the band gap of GaAs is reduced to about 1.0 eV by 1.42 eV.
Next step is at GaAs 1-x N x Graded buffer layer 800 top upside-down mounting growth GaAs 1-x N x The 5th sub-battery 900, its band gap is 1 eV, specifically comprises: N-shaped GaInP Window layer 901, its thickness is 25 nm, doping content is 1 * 10 18Cm -3About; GaAs 1-x N x Emitter region 902, thickness are 250 nm, and doping content is 2 * 10 18Cm -3GaAs 1-x N x Base 903, thickness preferred value are 2000 nm, and the N component is 0.0375, and doping content is 5 * 10 17Cm -3P-type GaInP back surface field layer 904, its thickness is 50 nm, doping content is 1 * 10 18Cm -3About.
Next step covers heavy doping n++-GaAs above the 5th sub-battery 900 1-x N x Block layer 102, thickness is 500 nm, doping content is 1 * 10 19Cm -3, finish the epitaxial growth of semiconductor material layer, its section of structure is as shown in Figure 2.
At last, adopt the substrate bonding techniques, the counter-rotating of aforesaid semiconductor material layer is placed on the supporting substrate, and removes GaAs substrate 100, carry out the antireflective film evaporation at sample surfaces, the later stage techniques such as the preparation of metal electrode are finished needed solar cell.
Fig. 3 shows the figure simple in structure of solar cell of the inverted structure of last formation.Wherein, the 5th sub-battery 900 is end battery, and 700 is time end battery.GaAs 1-x N x GaAs in the graded buffer layer 800 1-x N x , the content of N combination is increased by zero trace, utilizes GaAs 1-x N x The characteristic of band gap fast-descending when material band gap progressively increases along with the N component, with its band gap from being reduced to about 1.0 eV by 1.42 eV.On the one hand, graded buffer layer 800 is the gradual change of small component multilayer, and stress is progressively discharged, and effectively reduces dislocation density, on the other hand since with the homogenous materials of end battery, can obtain dislocation density lower, the better sub-battery of crystal mass.
Embodiment two
The present embodiment discloses a kind of upside-down mounting four-junction solar cell, can remove AlGaInP the first sub-battery 300 on the basis of implementing, with the first sub-battery of GaInP the second sub-battery 500 as the present embodiment, form 1.89 eV/1.65 eV/1.4 eV/, 1 eV upside-down mounting four-junction solar cell.
Embodiment three
The present embodiment discloses a kind of upside-down mounting four-junction solar cell, can remove GaInP the second sub-battery 500 on the basis of implementing, forms 2.2 eV/1.65 eV/1.4 eV/, 1 eV upside-down mounting four-junction solar cell.
Embodiment four
The present embodiment discloses a kind of upside-down mounting three-joint solar cell, can remove AlGaInP the first sub-battery 300 and AlGaAs the 3rd sub-battery 600 on the basis of implementing, forms 1.89 eV/1.4 eV/1 eV upside-down mounting three-joint solar cells.

Claims (10)

1. multijunction solar cell comprises end battery, battery of the inferior end and top battery at least, and lattice does not mate between end battery and time end battery, it is characterized in that: also comprise graded buffer layer between end battery and battery of the inferior end, the homogenous materials of itself and end battery.
2. multijunction solar cell according to claim 1, it is characterized in that: described graded buffer layer and end battery homogeneity, its material is GaAs 1-x N x , the numerical value of x is 0 ~ 0.0376.
3. multijunction solar cell according to claim 2, it is characterized in that: described multijunction solar cell is three-joint solar cell, wherein the band gap of end battery is 1.15 ~ 0.95eV, and the band gap of battery of the inferior end is 1.45 ~ 1.36eV, and the band gap of top battery is 1.95 ~ 1.85eV.
4. multijunction solar cell according to claim 2, it is characterized in that: described multijunction solar cell is four-junction solar cell, wherein the band gap of end battery is 1.15 ~ 0.95eV, the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.65 ~ 1.55eV, and the band gap of top battery is 1.95 ~ 1.85eV.
5. multijunction solar cell according to claim 2, it is characterized in that: described multijunction solar cell is four-junction solar cell, wherein the band gap of end battery is 1.15 ~ 0.95eV, the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.95 ~ 1.85eV, and the band gap of top battery is 2.24 ~ 2.05eV.
6. multijunction solar cell according to claim 2, it is characterized in that: described multijunction solar cell is five-junction solar cell, wherein the band gap of end battery is 1.15 ~ 0.95eV, the band gap of battery of the inferior end is 1.45 ~ 1.36eV, the band gap of middle battery is 1.65 ~ 1.55eV, the band gap of inferior top battery is 1.95 ~ 1.85eV, and the band gap of top battery is 2.24 ~ 2.05eV.
7. multijunction solar cell according to claim 2 is characterized in that: described graded buffer layer by becoming, makes its band gap be gradient to the band gap of end battery from 1.42 eV by the N component.
8. multijunction solar cell according to claim 2, it is characterized in that: described graded buffer layer is the multilayer gradual change, and stress is progressively discharged, and effectively reduces dislocation density.
9. the manufacture method of multijunction solar cell, it comprises step:
1) the upside-down mounting semiconductor material layer of each knot battery of growing, its to lower and on comprise top battery, electricity of the inferior end, graded buffer layer and end battery, wherein, lattice does not mate the homogenous materials of the material of graded buffer layer and end battery between end battery and the battery of the inferior end;
2) provide a supporting substrate, described semiconductor material layer counter-rotating is placed on the described supporting substrate.
10. the manufacture method of multi-junction solar according to claim 9, it is characterized in that: described graded buffer layer and end battery homogeneity, its material is GaAs 1-x N x , the numerical value of x is 0 ~ 0.0376.
CN201210582092XA 2012-12-28 2012-12-28 Multi-junction solar battery and preparation method thereof Pending CN103077983A (en)

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WO2014101631A1 (en) * 2012-12-28 2014-07-03 厦门市三安光电科技有限公司 Multi-junction solar cell and preparation method thereof
CN105762208A (en) * 2016-02-29 2016-07-13 天津蓝天太阳科技有限公司 Forward mismatch four-junction cascade gallium arsenide solar cell and preparation method thereof
CN110797427A (en) * 2019-12-02 2020-02-14 中山德华芯片技术有限公司 Inverted growth double-heterojunction four-junction flexible solar cell and preparation method thereof

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CN105322044B (en) * 2014-07-25 2017-12-19 江苏宜兴德融科技有限公司 Multijunction solar cell epitaxial structure
GB2555409B (en) * 2016-10-25 2020-07-15 Iqe Plc Photovoltaic Device

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CN102832274A (en) * 2012-09-05 2012-12-19 天津三安光电有限公司 Flip-chip solar cell and manufacture method thereof

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