CN103023451A - Band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer - Google Patents
Band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer Download PDFInfo
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Abstract
The invention discloses a band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer. The band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer comprises an input port P1, a band-elimination input inductor L1, a band-elimination interstage inductor L2, a band-elimination output inductor L3, a band-elimination first branch inductor L4, a band-elimination second branch inductor L5, a band-elimination input capacitor C1, a band-elimination interstage capacitor C2, a band-elimination output capacitor C3, a band-elimination first branch ground capacitor C4, a band-elimination second branch ground capacitor C5, a band-elimination output port P2, a band-pass input inductor L6, a band-pass interstage inductor L7, a band-pass first branch inductor L8, a band-pass second branch inductor L9, a band-pass input capacitor C6, a band-pass interstage capacitors C7 and C10, a band-pass output capacitor C11, a band-pass first branch capacitor C8, a band-pass second branch capacitor C9, and a band-pass output port P3, wherein all above parts are realized on the basis of low-temperature co-fired ceramic technology. The band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer is small in size, high in reliability, good in electrical property and temperature stability, and capable of meeting requirements of a modern wireless communication system for the miniature high-performance microwave duplexer.
Description
Technical field
The present invention relates to a kind of duplexer, particularly a kind of band logical/the band resistance type low-temperature co-fired ceramic duplexer that declines.
Background technology
Duplexer is a kind of device that makes sending and receiving letter machine can share a cover antenna and feeder system, it is the only way which must be passed that wireless signal transmission is gone out and received into, its effect is to prevent from transmitting directly entering receiver front end and causing that receive channel is saturated even burn, avoid simultaneously transmitter noise on the impact of receiving sensitivity, at present, in the mobile communication system front end there be much the kind of duplexer, such as: waveguide duplexer, coaxial duplexer etc., these duplexers be faced with volume large, heavy, install and use inconvenience etc. some problems; The design of waveguide duplexer mainly utilizes the design concept of microwave distributed circuit, so that the operation wavelength of the volume of duplexer and signal can be compared, for the lower duplexer of working frequency range, makes inevitably the duplexer volume very large; Meanwhile, the transmission medium of signal is air in the waveguide duplexer, and the aerial operation wavelength of signal will be grown with respect to the operation wavelength in the dielectric material, and this is to cause the bulky major reason of waveguide duplexer; In addition, the rapidoprint of waveguide duplexer is metal, causes waveguide duplexer heavy, uses inconvenience is installed; For coaxial duplexer, run into equally the problems such as volume is large, heavy; Day by day universal along with radio communication and personal electric product, the miniaturization of electronic device more and more receives people's concern, has wide market prospects, and the critical component duplexer in communication and the radar system is faced with the miniaturization challenge of sternness thus; LTCC Technology can realize the lamped elements such as inductance, electric capacity in less volume, thereby can carry out neatly circuit design, the ceramic material stability of this utilization is high, and can realize high dielectric constant, thereby can greatly reduce the volume of device or module, the LTCC device can also be realized producing in enormous quantities, reduce cost, thereby the market for electronic devices now has sizable competitiveness, utilize LTCC Technology to realize duplexer, the great market demand is arranged.
Summary of the invention
The object of the present invention is to provide that a kind of volume is little, lightweight, reliability is high, electrical property is excellent, simple in structure, rate of finished products is high, in batches high conformity, cost is low, temperature performance is stable band logical/the band resistance type low-temperature co-fired ceramic duplexer that declines.
The technical scheme that realizes the object of the invention is: a kind of band is logical/and the band resistance type low-temperature co-fired ceramic duplexer that declines, comprising: input port, band resistance input inductance, band resistance inter-stage inductance, band resistance outputting inductance, band resistance first branch's inductance, band resistance second branch's inductance, band resistance input capacitance, band resistance inter-stage electric capacity, band resistance output capacitance, band resistance first branch's ground capacity, band resistance second branch's ground capacity, band resistance output port, the logical input of band inductance, the logical inter-stage inductance of band, the logical first branch's inductance of band, the logical second branch's inductance of band, the logical input capacitance of band, the logical inter-stage electric capacity of band, the logical output capacitance of band, logical the first tap capacitance of band, logical the second tap capacitance of band, the logical output port of band; Input port connects input signal and is divided into two-way, one tunnel in turn connecting band resistance input inductance and band resistance input capacitance, band resistance inter-stage inductance and band resistance inter-stage electric capacity, band resistance outputting inductance and band resistance output capacitance, band resistance output port, one end of band resistance input inductance, one end of band resistance input capacitance is connected with input port, the band resistance input inductance other end, the other end of band resistance input capacitance. an end of band resistance inter-stage inductance, one end of band resistance inter-stage electric capacity connects with the end with resistance first branch's inductance, the other end of band resistance inter-stage inductance, one end of band resistance inter-stage electric capacity, one end of band resistance outputting inductance, one end of band resistance output capacitance be connected an end of branch's inductance and connect, the other end of band resistance outputting inductance is connected with band resistance output port, the other end of band resistance first branch's inductance is connected with an end of band resistance first branch's ground capacity, the other end ground connection of band resistance first branch's ground capacity, the other end ground connection of band resistance second branch's ground capacity; Another road is the logical input capacitance of connecting band in turn, the logical input of band inductance, the logical inter-stage inductance of band, the logical inter-stage electric capacity of band, the logical output capacitance of band, the logical output port of band, one end of the logical input capacitance of band, one end of the logical input of band inductance is connected with input port, the other end of the logical input capacitance of band, the other end of the logical input of band inductance is connected with an end of the logical inter-stage inductance of band, the other end of the logical inter-stage inductance of band is connected with an end of the logical inter-stage electric capacity of band, the other end of the logical inter-stage electric capacity of band, one end of first branch's inductance connects with a end with logical inter-stage electric capacity, the other end of the logical inter-stage electric capacity of band leads to respectively an end of second branch's inductance with band, one end of the logical output capacitance of band connects, the other end of the logical output capacitance of band is connected with the logical output port of band, the other end of the logical first branch's inductance of band is connected with an end of logical the first tap capacitance of band, the other end ground connection of the first tap capacitance, one end of the logical second branch's inductance of band is connected the other end ground connection of the second tap capacitance with an end of the second tap capacitance.
LTCC Technology, refer to the low-temperature sintered ceramics powder is made the accurate and fine and close green band of thickness, utilize the techniques such as laser drilling, micropore slip casting, accurate conductor paste printing to produce needed circuitous pattern at the green band after being cut into certain size, and a plurality of passive blocks (such as low appearance value electric capacity, resistance, filter, impedance transformer, coupler etc.) are imbedded in the multilayer ceramic substrate, then overlap together, at 900 degrees centigrade of lower sintering, make the non-interfering high-density circuit of three dimensions.It also can be made into the three-dimensional circuit substrate of built-in passive component, at its surface mount integrated circuit and active device, makes passive/active integrated functional module.LTCC Technology relates to the widely field such as material science, circuit design, microwave technology, the aspects such as flexibility, wiring density and reliability in design provide huge potential, for miniaturization, the lightweight of various electronic system component modules in the present age provides good solution route, more and more be subjected to international and domestic attention.
The present invention compared with prior art, based on the 3 D stereo Integration Concept, with integrating of all electric capacity in the duplexer circuit, inductance element high flexible, utilize the low-temperature co-burning ceramic material of low-loss, high-k, at 900 degrees centigrade of left and right sides sintering, so have extreme high reliability and temperature stability; All inductance of bandreject filtering part adopt the circular ring-type coupled metal lines of lamination bar to realize, all inductance of bandpass filtering part adopt lamination square ring coupled metal lines bar to realize, all electric capacity all adopt media plate electric capacity to realize, media plate electric capacity is made of metal plate and dielectric material, it is the dielectric material between the metal plate, the dielectric material adopts high performance ceramic material, the physical size of all structures all can freely be changed in the design phase, and the microwave property of each element utilizes three-dimensional all-wave Electromagnetic Simulation software all can to obtain fast and accurately, design flexibility is very high, and based on three-dimensional all-wave Electromagnetic Simulation software, for the duplexer of finally building moulding, can do the full-wave simulation checking, predict exactly the microwave property of duplexer, guarantee for production and processing provides solid theory; Finally utilize this duplexer of LTCC processes moulding, have that volume is little, lightweight, reliability is high, electrical property is excellent, temperature stability is high, the circuit implementation structure is simple, high conformity, cost are low, easy to install and use, can be used for that full-automatic chip mounter is installed and welding.
Description of drawings
Fig. 1 is with logical/band to hinder the type low-temperature co-fired ceramic duplexer electrical schematic diagram that declines.
Fig. 2 and Fig. 3 are with logical/band to hinder the type low-temperature co-fired ceramic duplexer internal structure schematic diagram that declines.
Fig. 4 be band of the present invention logical/the band resistance three-dimensional full-wave simulation performance curve of type low-temperature co-fired ceramic duplexer that declines.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
In conjunction with Fig. 1, Fig. 2, Fig. 3 and Fig. 4, band of the present invention is logical/and the band resistance type low-temperature co-fired ceramic duplexer that declines comprises input port P1, band resistance input inductance L 1, band resistance inter-stage inductance L 2, band resistance outputting inductance L3, band resistance first branch's inductance L 4, band resistance second branch's inductance L 5, band resistance input capacitance C1, band resistance inter-stage capacitor C 2, band resistance output capacitance C3, band resistance the first ground capacity C4 of branch, band resistance the second ground capacity C5 of branch, band resistance output port P2, the logical input of band inductance L 6, the logical inter-stage inductance L 7 of band, the logical first branch's inductance L 8 of band, the logical second branch's inductance L 9 of band, the logical input capacitance C6 of band, the logical inter-stage capacitor C 7 of band and C10, the logical output capacitance C11 of band, logical the first tap capacitance C8 of band, logical the second tap capacitance C9 of band, the logical output port P3 of band; Input port P1 connects input signal and is divided into two-way, one tunnel in turn connecting band resistance input inductance L 1 and band resistance input capacitance C1, band resistance inter-stage inductance L 2 and band resistance inter-stage capacitor C 2, band resistance outputting inductance L3 and band resistance output capacitance C3, band resistance output port P2, one end of band resistance input inductance L 1 is connected with input port P1, band resistance input inductance L 1 other end hinders respectively an end of inter-stage inductance L 2 with band, one end of band resistance first branch's inductance L 4 connects, the other end of band resistance inter-stage inductance L 2 hinders respectively the end of outputting inductance L3 with band, one end of band resistance second branch's inductance L 5 connects, the other end of band resistance outputting inductance L3 is connected with band resistance output port P2, the other end of band resistance first branch's inductance L 4 is connected with the end of band resistance the first ground capacity C4 of branch, the other end ground connection of band resistance the first ground capacity C4 of branch, the other end of band resistance second branch's inductance L 5 is connected with the end of band resistance the second ground capacity C5 of branch, the other end ground connection of band resistance the second ground capacity C5 of branch, band resistance input capacitance C1 two ends are connected in parallel with band resistance input inductance L 1 two ends, band resistance inter-stage capacitor C 2 two ends are connected in parallel with band resistance inter-stage inductance L 2 two ends, and band resistance output capacitance C3 two ends are connected in parallel with band resistance outputting inductance L3 two ends; Another road is the logical input capacitance C6 of connecting band in turn, the logical input of band inductance L 6, the logical inter-stage inductance L 7 of band, the logical inter-stage capacitor C 7 of band and C10, the logical output capacitance C11 of band, the logical output port P3 of band, the end of the logical input capacitance C6 of band, one end of the logical input of band inductance L 6 is connected with input port P1, the other end of the logical input capacitance C6 of band, one end of the logical input of band inductance L 6 is connected with an end of the logical inter-stage inductance L 7 of band, the other end of the logical inter-stage inductance L 7 of band is connected with an end of the logical inter-stage capacitor C 7 of band, the other end of the logical inter-stage capacitor C 7 of band, one end of first branch's inductance L 8 connects with a end with logical inter-stage capacitor C 10, the other end of the logical inter-stage capacitor C 10 of band leads to respectively an end of second branch's inductance L 9 with band, the end of the logical output capacitance C11 of band connects, the other end of the logical output capacitance C11 of band is connected with the logical output port P3 of band, the other end of the logical first branch's inductance L 8 of band is connected with the end of logical the first tap capacitance C8 of band, the other end ground connection of the first tap capacitance C8, one end of the logical second branch's inductance L 9 of band is connected the other end ground connection of the second tap capacitance C9 with the end of the second tap capacitance C9.
Band resistance input inductance L 1, band resistance inter-stage inductance L 2, band resistance outputting inductance L3, band resistance first branch's inductance L 4, band resistance second branch's inductance L 5, band resistance input capacitance C1, band resistance inter-stage capacitor C 2, band resistance output capacitance C3, band resistance the first ground capacity C4 of branch, band resistance the second ground capacity C5 of branch, the logical input of band inductance L 6, the logical inter-stage inductance L 7 of band, the logical first branch's inductance L 8 of band, the logical second branch's inductance L 9 of band, the logical input capacitance C6 of band, the logical inter-stage capacitor C 7 of band and C10, the logical output capacitance C11 of band, logical the first tap capacitance C8 of band, logical the second tap capacitance C9 of band and through hole all adopt LTCC technique to realize; Wherein said band resistance input inductance L 1, band resistance inter-stage inductance L 2, band resistance outputting inductance L3, band resistance first branch's inductance L 4, band resistance second branch's inductance L 5, all adopt the circular ring-type coupled metal lines of lamination bar to realize that each metal wire links to each other by the interlayer manhole; The logical input of described band inductance L 6, the logical inter-stage inductance L 7 of band, the logical first branch's inductance L 8 of band, the logical second branch's inductance L 9 of band all adopt lamination square ring coupled metal lines bar to realize, each metal wire links to each other by the interlayer manhole; Described band resistance input capacitance C1, band resistance inter-stage capacitor C 2, band resistance output capacitance C3, band resistance the first ground capacity C4 of branch, band resistance the second ground capacity C5 of branch, the logical input capacitance C6 of band, the logical inter-stage capacitor C 7 of band and C10, the logical output capacitance C11 of band, logical the first tap capacitance C8 of band, logical the second tap capacitance C9 of band, all adopt media plate electric capacity to realize, media plate electric capacity is made of metal plate and dielectric material, be the dielectric material between the metal plate, the dielectric material adopts high performance ceramic material; Described through hole after the perforation of employing medium, is filled metal and is realized.
Be with logical/band to hinder the type low-temperature co-fired ceramic duplexer that declines, its operation principle is summarized as follows: the band resistance part is divided, the wideband microwave signal of input hinders the parallel resonator of input capacitance L1 and band resistance input inductance L 1 composition through band, signal in the required passband is selected, suppress simultaneously passband with external signal, realize first order band resistance frequency-selecting, be transferred to afterwards the series resonator that is formed by band resistance first branch's inductance L 4 and band resistance the first ground capacity C4 of branch, realize second level band resistance frequency-selecting, and then band resistance inter-stage inductance L 2 and band resistance inter-stage capacitor C 2 form parallel resonator, microwave signal is done third level band resistance frequency-selecting, afterwards, band resistance second branch's inductance L 5 and band resistance the second ground capacity C5 of branch form series resonator, realize fourth stage band resistance frequency-selecting, last microwave signal realizes level V band resistance frequency-selecting by the parallel resonator that band resistance outputting inductance L3 and band resistance output capacitance C3 form, and exports band resistance output port P2 to; The logical part of band, the wideband microwave signal of input is led to the series resonator of input capacitance C6 and the logical input of band inductance L 6 compositions through band, signal in the required passband is selected, suppress simultaneously passband with external signal, realize the logical frequency-selecting of first order band, the inter-stage series resonance that forms by the logical inter-stage inductance L 7 of band and inter-stage capacitor C 7 subsequently, needed passband signal is selected, realize the logical frequency-selecting of second level band, be transferred to afterwards the parallel resonator that is formed by logical the first tap capacitance C8 of band and the logical first branch's inductance L 8 of band, realize the logical frequency-selecting of third level band, and then the logical inter-stage capacitor C 10 of band is as capacity coupler, microwave signal is coupled to rear one-level resonator, after the logical inter-stage capacitor C 10 of band, the logical second branch's inductance L 9 of logical the second tap capacitance C9 of band and band forms parallel resonator signal is realized the logical frequency-selecting of fourth stage band, realizes the logical frequency-selecting of fourth stage band, and last microwave signal is by being with logical output capacitance C11 to export the logical output port P3 of band to; Band leads to/is with the band-pass circuit and the band resistance circuit that hinder the type low-temperature co-fired ceramic duplexer that declines and is connected in parallel, because bandwidth-limited circuit and rejector circuit have complementary characteristic, so the isolation between frequency band is fine each other, signal in band is with all and the interior signal transmitting and receiving of band resistance passband are independent of each other, and have realized the full-duplex communication of microwave signal.
Referring to Fig. 2, Fig. 3 as can be known, the present embodiment band logical/the decline volume of type low-temperature co-fired ceramic duplexer of band resistance is 3.2mm * 4.5mm * 2.4mm; Fig. 4 is the three-dimensional full-wave simulation result of present embodiment, in passband, the input port standing wave overwhelming majority is lower than-10dB, in 0.2GHz～0.75GHz, decay is greater than 20dB, in 0.95GHz～1.45GHz and 1.65GHz～2.2GHz, decay is greater than 25dB, and typical insertion loss is-2.1dB in the passband.
Claims (5)
1. be with logical/band to hinder the type low-temperature co-fired ceramic duplexer that declines, it is characterized in that: comprise input port [P1] for one kind, band resistance input inductance [L1], band resistance inter-stage inductance [L2], band resistance outputting inductance [L3], band resistance first branch's inductance [L4], band resistance second branch's inductance [L5], band resistance input capacitance [C1], band resistance inter-stage electric capacity [C2], band resistance output capacitance [C3], band resistance first branch's ground capacity [C4], band resistance second branch's ground capacity [C5], band resistance output port [P2], the logical input of band inductance [L6], the logical inter-stage inductance [L7] of band, the logical first branch's inductance [L8] of band, the logical second branch's inductance [L9] of band, the logical input capacitance [C6] of band, the logical inter-stage electric capacity [C7] of band and [C10], the logical output capacitance [C11] of band, logical the first tap capacitance [C8] of band, logical the second tap capacitance [C9] of band, the logical output port [P3] of band; Input port [P1] connects input signal and is divided into two-way, one the tunnel connecting band resistance input inductance [L1] and band hinder input capacitance [C1] in turn, band resistance inter-stage inductance [L2] and band resistance inter-stage electric capacity [C2], band resistance outputting inductance [L3] and band resistance output capacitance [C3], band resistance output port [P2], one end of band resistance input inductance [L1], one end of band resistance input capacitance [C1] is connected with input port [P1], band resistance input inductance [L1] other end, the other end of band resistance input capacitance [C1]. an end of band resistance inter-stage inductance [L2], one end of band resistance inter-stage electric capacity [C2] and band hinder the end connection of first branch's inductance [L4], the other end of band resistance inter-stage inductance [L2], one end of band resistance inter-stage electric capacity [C2], one end of band resistance outputting inductance [L3], one end of band resistance output capacitance [C3] be connected an end of branch's inductance [L5] and connect, the other end of band resistance outputting inductance [L3] is connected with band resistance output port [P2], the other end of band resistance first branch's inductance [L4] is connected with an end of band resistance first branch's ground capacity [C4], the other end ground connection of band resistance first branch's ground capacity [C4], the other end ground connection of band resistance second branch's ground capacity [C5]; Another road is the logical input capacitance [C6] of connecting band in turn, the logical input of band inductance [L6], the logical inter-stage inductance [L7] of band, the logical inter-stage electric capacity [C7] of band and [C10], the logical output capacitance [C11] of band, the logical output port [P3] of band, one end of the logical input capacitance [C6] of band, one end of band logical input inductance [L6] is connected with input port [P1], the other end of the logical input capacitance [C6] of band, the other end of band logical input inductance [L6] is connected with an end of the logical inter-stage inductance [L7] of band, the other end of the logical inter-stage inductance [L7] of band is connected with an end of the logical inter-stage electric capacity [C7] of band, the other end of the logical inter-stage electric capacity [C7] of band, one end of first branch's inductance [L8] connects with a end with logical inter-stage electric capacity [C10], the other end of the logical inter-stage electric capacity [C10] of band leads to respectively an end of second branch's inductance [L9] with band, one end of the logical output capacitance [C11] of band connects, the other end of the logical output capacitance [C11] of band is connected with the logical output port [P3] of band, the other end of the logical first branch's inductance [L8] of band is connected with an end of logical the first tap capacitance [C8] of band, the other end ground connection of the first tap capacitance [C8], one end of the logical second branch's inductance [L9] of band is connected the other end ground connection of the second tap capacitance [C9] with an end of the second tap capacitance [C9].
Band according to claim 1 logical/the band resistance type low-temperature co-fired ceramic duplexer that declines, it is characterized in that: input port [P1], band resistance input inductance [L1], band resistance inter-stage inductance [L2], band resistance outputting inductance [L3], band resistance first branch's inductance [L4], band resistance second branch's inductance [L5], band resistance input capacitance [C1], band resistance inter-stage electric capacity [C2], band resistance output capacitance [C3], band resistance first branch's ground capacity [C4], band resistance second branch's ground capacity [C5], band resistance output port [P1], the logical input of band inductance [L6], the logical inter-stage inductance [L7] of band, the logical first branch's inductance [L8] of band, the logical second branch's inductance [L9] of band, the logical input capacitance [C6] of band, the logical inter-stage electric capacity [C7] of band and [C10], the logical output capacitance [C11] of band, logical the first tap capacitance [C8] of band, logical the second tap capacitance [C9] of band, the logical output port [P3] of band and through hole all adopt LTCC technique to realize.
Band according to claim 1 and 2 logical/the band resistance type low-temperature co-fired ceramic duplexer that declines, it is characterized in that: band resistance input inductance [L1], band resistance inter-stage inductance [L2], band resistance outputting inductance [L3], band resistance first branch's inductance [L4], band resistance second branch's inductance [L5], all adopt the circular ring-type coupled metal lines of lamination bar to realize that each metal wire links to each other by the interlayer manhole; The logical input of band inductance [L6], the logical inter-stage inductance [L7] of band, the logical first branch's inductance [L8] of band, the logical second branch's inductance [L9] of band all adopt lamination square ring coupled metal lines bar to realize, each metal wire links to each other by the interlayer manhole.
Band according to claim 1 and 2 logical/the band resistance type low-temperature co-fired ceramic duplexer that declines, it is characterized in that: band resistance input capacitance [C1], band resistance inter-stage electric capacity [C2], band resistance output capacitance [C3], band resistance first branch's ground capacity [C4], band resistance second branch's ground capacity [C5], the logical input capacitance [C6] of band, the logical inter-stage electric capacity [C7] of band and [C10], the logical output capacitance [C11] of band, logical the first tap capacitance [C8] of band, logical the second tap capacitance [C9] of band, all adopt media plate electric capacity to realize, media plate electric capacity is made of metal plate and dielectric material, be the dielectric material between the metal plate, the dielectric material adopts high performance ceramic material; Through hole after the perforation of employing medium, is filled metal and is realized.
Band according to claim 1 and 2 logical/the band resistance type low-temperature co-fired ceramic duplexer that declines, it is characterized in that: described duplexer is left-right layout, left part is divided into bandpass filtering branch, right part is divided into bandreject filtering branch, middle is 2.18mm by five length, the through hole post of radius 0.085mm connects up and down screen, and the through hole post also plays the effect that increases the right and left isolation; The outer enclosure environment of whole left and right sides structure duplexer is identical with the up-down structure duplexer.
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| CN104301022A (en) * | 2014-10-28 | 2015-01-21 | 成都锐新科技有限公司 | Microwave communication device based on UHF frequency bands |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN114050384A (en) * | 2021-06-28 | 2022-02-15 | 苏州希拉米科电子科技有限公司 | Low-temperature co-fired ceramic duplexer |
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| CN102255609A (en) * | 2010-05-17 | 2011-11-23 | 上海交泰信息科技有限公司 | Low temperature cofired ceramic (LTCC)-process-based duplexer with novel structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104301022A (en) * | 2014-10-28 | 2015-01-21 | 成都锐新科技有限公司 | Microwave communication device based on UHF frequency bands |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN114050384A (en) * | 2021-06-28 | 2022-02-15 | 苏州希拉米科电子科技有限公司 | Low-temperature co-fired ceramic duplexer |
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Application publication date: 20130403 |