CN103022892A - Structure and manufacture method of high power laser chip with wavelength of 808nm - Google Patents
Structure and manufacture method of high power laser chip with wavelength of 808nm Download PDFInfo
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- CN103022892A CN103022892A CN2012105416940A CN201210541694A CN103022892A CN 103022892 A CN103022892 A CN 103022892A CN 2012105416940 A CN2012105416940 A CN 2012105416940A CN 201210541694 A CN201210541694 A CN 201210541694A CN 103022892 A CN103022892 A CN 103022892A
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Abstract
The invention relates to a structure and a manufacture method of a high power laser chip with a wavelength of 808nm. The structure of the high power laser chip comprises components which are formed on a substrate (0) in sequence: a buffer layer (1), a first gradual change limit layer (2), a first waveguide layer (3), a second waveguide layer (4), a first quantum well barrier layer (5), a quantum well active layer (6), a second quantum well barrier layer (7), a third waveguide layer (8), a corrosion stop layer (9), a fourth waveguide layer (10), a second gradual change limit layer (11), an ohm contact layer (12), an insulating medium layer (13), a P-shaped upper electrode(14) and an N-shaped lower electrode(15). The structure by using the manufacture method facilitates controlling corrosion depth due to the fact that the corrosion stop layer composed of P-shaped indium gallium phosphide is added, and good functions of improving the production efficiency and the finished product rate are achieved.
Description
Technical field
The present invention relates to semiconductor laser field, particularly a kind of wavelength is high power laser chip structure of 808nm and preparation method thereof.
Background technology
Along with improving constantly of high power semiconductor lasers power output, electro-optical efficiency, reliability and stability.High power semiconductor lasers is more extensive in the application of the aspects such as laser communication, optical storage, optical circulator, laser and radar, and the market demand is huge, and development prospect is more wide.
Existing structure needs accurate control time and the degree of depth in making the chip etching process, large-scale production makes some difference.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of wavelength is high power laser chip structure of 808nm and preparation method thereof.
For reaching above-mentioned purpose, the invention provides a kind of wavelength is the high power laser chip structure of 808nm, comprising:
One substrate 0, it is the N-type GaAs layer of mixing Si of 100 orientations, wherein Si doping content〉1 * 10
18Cm
-3
One resilient coating 1, it is to mix the N-type GaAs layer of Si and be formed on the substrate 0, wherein the Si doping content〉2 * 10
18Cm
-3
One first gradual change limiting layer 2, it is the N-type Al that mixes Si
xGa
1-xThe As layer also is formed on the resilient coating 1, wherein the Si doping content〉2 * 10
18Cm
-3, x=0.1-0.5;
One first wave conducting shell 3, it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first gradual change limiting layer 2, and wherein the Si doping content is 5 * 10
17Cm
-3
One Second Wave conducting shell 4, it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first wave conducting shell 3, and wherein the Si doping content is 2-5 * 10
17Cm
-3
One first quantum well is built layer 5, and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the Second Wave conducting shell 4;
One mqw active layer 6, it is non-doping In
0.1Al
0.12Ga
0.78The As layer also is formed on the first quantum well base layer 5;
One second quantum well is built layer 7, and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the mqw active layer 6;
One the 3rd ducting layer 8, it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the second quantum well base layer 7, and wherein the C doping content is 2-5 * 10
17Cm
-3
One etch stop layer 9, it is to mix the P type InGaP layer of C and be formed on the 3rd ducting layer 8, wherein, the C doping content is 5 * 10
17Cm
-3
One the 4th ducting layer 10, it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the etch stop layer 9, and wherein the C doping content is 5 * 10
17Cm
-3
One second gradual change limiting layer 11, it is the P type Al that mixes C
xGa
1-xThe As layer also is formed on the 4th ducting layer 10, and wherein the C doping content is 2 * 10
18Cm
-3, x=0.5-0.1;
One ohmic contact layer 12, it is to mix the P type GaAs layer of C and be formed on the second gradual change limiting layer 11, wherein the C doping content is 5 * 10
19Cm
-3
One insulating medium layer 13, it is the SiN layer and is formed on the ohmic contact layer 12;
One P type top electrode 14, it is the TiPtAu layer and is formed on the ohmic contact layer 12;
One N-type bottom electrode 15, its for the Au-Ge-Ni layer and be formed at substrate 0 below.
Further, the thickness of wherein said etch stop layer 9 is 10nm.
Further, the thickness of wherein said insulating medium layer 13 is 250nm, and refractive index is 2.0.
Further, the thickness of wherein said P type top electrode 14 is 2 μ m.
Further, the thickness of wherein said N-type bottom electrode 15 is 5000 μ m.
It is the manufacture method of the high power laser chip structure of 808nm that the present invention also provides a kind of wavelength, may further comprise the steps:
1) extension generation resilient coating 1, the first gradual change limiting layer 2, first wave conducting shell 3, Second Wave conducting shell 4, the first quantum well are built layer 5, mqw active layer 6, the second quantum well base layer the 7, the 3rd ducting layer 8, etch stop layer 9, the 4th ducting layer 10, the second gradual change limiting layer 11 and ohmic contact layer 12 successively on substrate 0;
2) according to the ridge waveguide processing method, at first apply the thick photoresist of 2 μ m and in 88-92 ℃ of scope, toast at ohmic contact layer 12, again by exposure imaging in making photoetching offset plate figure (being similar to the figure of grating) on the ohmic contact layer 12 and in 118-122 ℃ of scope, toasting, under this photoresist masking, utilize H
2SO
4/ H
2O
2/ H
2The O corrosive liquid erodes ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, until on the etch stop layer 9, to be processed into the two ditch mesa structures of ridge, then deposition thickness is the insulating medium layer 13 of 250nm on the two ditch mesa structures of whole ridge, and utilizes photoetching method and caustic solution to set out the window that width is 45 μ m at table top ohmic contact layer 12;
3) afterwards, sputtered with Ti PtAu layer on ohmic contact layer 12 is made P type top electrode 14;
4) then attenuate and polished substrate 0 to 100 μ m make N-type bottom electrode 15, obtain described chip of laser structure.
Further, the method that extension generates step 1 wherein) is molecular beam epitaxy or metallo-organic compound CVD (Chemical Vapor Deposition) method.
Further, the width of photoetching offset plate figure is 50 μ m step 2 wherein).
Further, H step 2 wherein)
2SO
4/ H
2O
2/ H
2The volume ratio of O is 5:40:200.
Further, the width of window is 45 μ m step 2 wherein).
The advantage that the present invention has is:
By increasing the etch stop layer that is consisted of by the P type InGaP that mixes C, be convenient to control corrosion depth, the uniformity of corrosion depth is improved, to enhancing productivity and rate of finished products plays good effect.
Description of drawings
Fig. 1 is the generalized section of chip of laser structure of the present invention.
Embodiment
Below with reference to specific embodiment the present invention is described in further detail.
Fig. 1 illustrates the generalized section of chip of laser structure of the present invention.For obtaining the 808nm excitation wavelength, shown chip structure is to use the method for molecular beam epitaxy (MBE) or metallo-organic compound chemical vapor deposition (MOCVD) at the sandwich construction that substrate 0 forms, and comprising:
One substrate 0, it is the N-type GaAs layer of mixing Si of 100 orientations, wherein Si doping content〉1 * 10
18Cm
-3
One resilient coating 1, it is to mix the N-type GaAs layer of Si and be formed on the substrate 0, wherein the Si doping content〉2 * 10
18Cm
-3
One first gradual change limiting layer 2, it is the N-type Al that mixes Si
xGa
1-xThe As layer also is formed on the resilient coating 1, wherein the Si doping content〉2 * 10
18Cm
-3, x=0.1-0.5;
One first wave conducting shell 3, it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first gradual change limiting layer 2, and wherein the Si doping content is 5 * 10
17Cm
-3
One Second Wave conducting shell 4, it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first wave conducting shell 3, and wherein the Si doping content is 2-5 * 10
17Cm
-3
One first quantum well is built layer 5, and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the Second Wave conducting shell 4;
One mqw active layer 6, it is non-doping In
0.1Al
0.12Ga
0.78The As layer also is formed on the first quantum well base layer 5;
One second quantum well is built layer 7, and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the mqw active layer 6;
One the 3rd ducting layer 8, it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the second quantum well base layer 7, and wherein the C doping content is 2-5 * 10
17Cm
-3
One etch stop layer 9, it is to mix the P type InGaP layer of C and be formed on the 3rd ducting layer 8, wherein the C doping content is 5 * 10
17Cm
-3
One the 4th ducting layer 10, it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the etch stop layer 9, and wherein the C doping content is 5 * 10
17Cm
-3
One second gradual change limiting layer 11, it is the P type Al that mixes C
xGa
1-xThe As layer also is formed on the 4th ducting layer 10, and wherein the C doping content is 2 * 10
18Cm
-3, x=0.5-0.1;
One ohmic contact layer 12, it is to mix the P type GaAs layer of C and be formed on the second gradual change limiting layer 11, wherein the C doping content is 5 * 10
19Cm
-3
One insulating medium layer 13, it is the SiN layer and is formed on the ohmic contact layer 12 that wherein the thickness of SiN is 250nm, refractive index is 2.0;
One P type top electrode 14, it is the TiPtAu layer and is formed on the ohmic contact layer 12 that wherein the thickness of TiPtAu is 2 μ m;
One N-type bottom electrode 15, its for the Au-Ge-Ni layer and be formed at substrate 0 below, wherein the thickness of Au-Ge-Ni is 5000 μ m.
A kind of wavelength is the manufacture method of the high power laser chip structure of 808nm, may further comprise the steps:
1) on substrate 0, generates successively resilient coating 1, the first gradual change limiting layer 2, first wave conducting shell 3, Second Wave conducting shell 4, the first quantum well base layer 5, mqw active layer 6, the second quantum well base layer the 7, the 3rd ducting layer 8, etch stop layer 9, the 4th ducting layer 10, the second gradual change limiting layer 11 and ohmic contact layer 12;
2) according to the ridge waveguide processing method, at first at the ohmic contact layer 12 about 2 μ m photoresists of coating and in 90 ℃ of scopes, toast, again by exposure imaging in making the photoetching offset plate figure that width is 50 μ m (being similar to the figure of grating) on the ohmic contact layer 12 and in 120 ℃ of scopes, toasting, under ready-made this photoresist masking, utilize H
2SO
4/ H
2O
2/ H
2O (volume ratio is 5:40:200) corrosive liquid erodes ohmic contact layer 12, gradual change limiting layer 11, ducting layer 10, until on the etch stop layer 9, to be processed into the two ditch mesa structures of ridge, then deposition thickness is the insulating medium layer 13 of 250nm on the two ditch mesa structures of whole ridge, and utilize photoetching method and caustic solution to leave the window that width is 45 μ m at table top ohmic contact layer 12, be convenient to back splash-proofing sputtering metal layer and make electrode;
3) afterwards, the thick TiPtAu layer of sputter 2 μ m on ohmic contact layer 12 is made P type top electrode 14;
4) then attenuate and polished substrate 0 to 100 μ m make N-type bottom electrode 15, obtain described chip of laser structure (P-I-N semiconductor laser chip structure).
Chip of laser structure of the present invention compared with prior art, maximum difference is exactly to have increased P type InGaP etch stop layer.If do not increase this one deck structure, when doing etched mesa technique, need the accurate control time, so that the control corrosion depth, corroded dark excessively shallowly, all can exert an influence to last technical indicator and reliability.But select any material, do corrosion layer, also will consider Lattice Matching between the material, to the corrosive liquid different in kind.Through screening, we have selected to mix the P type InGaP of C as etch stop layer.It and AlGaAs material are complementary, and the lattice constant of InGaP is 0.57-0.58nm, and the lattice constant of AlGaAs is 0.56-0.57nm, and we can by the variation of growth material component, reach two materials and mate fully.In the critical thickness scope, we have selected the thick InGaP of 10nm as etch stop layer (by epitaxial growth verification experimental verification Material growth feasibility) simultaneously.Simultaneously InGaP not with H
2SO
4/ H
2O
2/ H
2O (volume ratio is 5:40:200) corrosive liquid reacts.After we utilize the structure that has increased etch stop layer to do whole ridge waveguide processing technology (as mentioned above step), test and obtained good result, the rate of finished products of the chip of laser structure of made brings up to 80% by original 50%, and does not affect index of correlation.When manufacture craft, because this one deck has been arranged, corrosion depth control is the natural convenience of change just, to enhancing productivity and rate of finished products all plays good effect.
Institute it should be noted that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although with reference to preferred embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. the high power laser chip structure that wavelength is 808nm is characterized in that, comprising:
One substrate (0), it is the N-type GaAs layer of mixing Si of 100 orientations, wherein Si doping content〉1 * 10
18Cm
-3
One resilient coating (1), it is to mix the N-type GaAs layer of Si and be formed on the substrate (0), wherein the Si doping content〉2 * 10
18Cm
-3
One first gradual change limiting layer (2), it is the N-type Al that mixes Si
xGa
1-xThe As layer also is formed on the resilient coating (1), wherein the Si doping content〉2 * 10
18Cm
-3, x=0.1-0.5;
One first wave conducting shell (3), it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first gradual change limiting layer (2), and wherein the Si doping content is 5 * 10
17Cm
-3
One Second Wave conducting shell (4), it is the N-type Al that mixes Si
0.5Ga
0.5The As layer also is formed on the first wave conducting shell (3), and wherein the Si doping content is 2-5 * 10
17Cm
-3
One first quantum well is built layer (5), and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the Second Wave conducting shell (4);
One mqw active layer (6), it is non-doping In
0.1Al
0.12Ga
0.78The As layer also is formed on the first quantum well base layer (5);
One second quantum well is built layer (7), and it is non-doped with Al
0.3Ga
0.7The As layer also is formed on the mqw active layer (6);
One the 3rd ducting layer (8), it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the second quantum well base layer (7), and wherein the C doping content is 2-5 * 10
17Cm
-3
One etch stop layer (9), it is to mix the P type InGaP layer of C and be formed on the 3rd ducting layer (8), wherein the C doping content is 5 * 10
17Cm
-3
One the 4th ducting layer (10), it is the P type Al that mixes C
0.5Ga
0.5The As layer also is formed on the etch stop layer (9), and wherein the C doping content is 5 * 10
17Cm
-3
One second gradual change limiting layer (11), it is the P type Al that mixes C
xGa
1-xThe As layer also is formed on the 4th ducting layer (10), and wherein the C doping content is 2 * 10
18Cm
-3, x=0.5-0.1;
One ohmic contact layer (12), it is to mix the P type GaAs layer of C and be formed on the second gradual change limiting layer (11), wherein the C doping content is 5 * 10
19Cm
-3
One insulating medium layer (13), it is the SiN layer and is formed on the ohmic contact layer (12);
One P type top electrode (14), it is the TiPtAu layer and is formed on the ohmic contact layer (12);
One N-type bottom electrode (15), its for the Au-Ge-Ni layer and be formed at substrate (0) below.
2. high power laser chip structure as claimed in claim 1 is characterized in that, the thickness of described etch stop layer (9) is 10nm.
3. high power laser chip structure as claimed in claim 1 is characterized in that, the thickness of described insulating medium layer (13) is 250nm, and refractive index is 2.0.
4. high power laser chip structure as claimed in claim 1 is characterized in that, the thickness of described P type top electrode (14) is 2 μ m.
5. high power laser chip structure as claimed in claim 1 is characterized in that, the thickness of described N-type bottom electrode (15) is 5000 μ m.
6. the manufacture method of the wavelength high power laser chip structure that is 808nm is characterized in that the method may further comprise the steps:
1) extension generation resilient coating (1), the first gradual change limiting layer (2), first wave conducting shell (3), Second Wave conducting shell (4), the first quantum well are built layer (5), a mqw active layer (6) successively on substrate (0), the second quantum well is built layer (7), the 3rd ducting layer (8), etch stop layer (9), the 4th ducting layer (10), the second gradual change limiting layer (11) and ohmic contact layer (12);
2) according to the ridge waveguide processing method, at first apply the thick photoresist of 2 μ m and in 88-92 ℃ of scope, toast at ohmic contact layer (12), again by exposure imaging in making photoetching offset plate figure on the ohmic contact layer (12) and in 118-122 ℃ of scope, toasting, under this photoresist masking, utilize H
2SO
4/ H
2O
2/ H
2The O corrosive liquid erodes ohmic contact layer (12), gradual change limiting layer (11), ducting layer (10), until on the etch stop layer (9), to be processed into the two ditch mesa structures of ridge, then the thick insulating medium layer (13) of deposit 250nm on the two ditch mesa structures of whole ridge, and utilize photoetching method and caustic solution to set out window at table top ohmic contact layer (12);
3) afterwards, at the upper thick TiPtAu layer of sputter 2 μ m of ohmic contact layer (12), make P type top electrode (14);
4) then attenuate and polished substrate (0) are made N-type bottom electrode (15) to 100 μ m, obtain described chip of laser structure.
7. method as claimed in claim 6 is characterized in that step 1) described in the method that generates of extension be molecular beam epitaxy or metallo-organic compound CVD (Chemical Vapor Deposition) method.
8. method as claimed in claim 6 is characterized in that step 2) described in the width of photoetching offset plate figure be 50 μ m.
9. method as claimed in claim 6 is characterized in that step 2) described in H
2SO
4/ H
2O
2/ H
2The volume ratio of O is 5:40:200.
10. method as claimed in claim 6 is characterized in that step 2) described in the width of window be 45 μ m.
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|---|---|---|---|
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| CN201410394081.8A Division CN104124609A (en) | 2012-12-14 | 2012-12-14 | High-power laser device chip structure with wavelength of 808nm and method for manufacturing high-power laser device chip structure |
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| CN103022892B CN103022892B (en) | 2015-03-25 |
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| CN111628022A (en) * | 2019-02-28 | 2020-09-04 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111628022B (en) * | 2019-02-28 | 2022-07-15 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111755948A (en) * | 2019-03-28 | 2020-10-09 | 上海新微技术研发中心有限公司 | GePb laser with ridge waveguide structure and forming method thereof |
| CN114079226A (en) * | 2020-08-21 | 2022-02-22 | 山东华光光电子股份有限公司 | High-uniformity high-power laser epitaxial wafer and preparation method thereof |
| CN114079226B (en) * | 2020-08-21 | 2024-01-12 | 山东华光光电子股份有限公司 | High-uniformity high-power laser epitaxial wafer and preparation method thereof |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN114400502A (en) * | 2022-01-04 | 2022-04-26 | 福建慧芯激光科技有限公司 | Round light spot single-mode semiconductor laser |
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