CN103022375A - Organic light-emitting diode (OLED) device and preparation method thereof - Google Patents
Organic light-emitting diode (OLED) device and preparation method thereof Download PDFInfo
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Abstract
The invention provides an organic light-emitting diode (OLED) device and a preparation method thereof. The device comprises a substrate and a display area and a non-display area which are formed on the substrate. The display area comprises a first electrode layer, a first organic layer and a second electrode layer which are sequentially arranged on the substrate. The non-display area comprises a lead area. An insulation medium layer used for isolating the first organic layer arranged on the first electrode layer is arranged on the first electrode layer of the display area, and a second organic layer is arranged at the upper end of the insulation medium layer. The shadow mask process is adopted to prepare a long strip second electrode pattern which is arranged on a pixel area, the width of the pattern is 1/3-1/2 of the width of the pixel area, and the pattern is arranged in the middle of the pixel area to replace the second electrode layer of a separation wall partition face structure and avoid series overlap joint of conductive layers between pixels. Separation wall process is saved, cost is saved, and the device structure and the production process are simpler.
Description
Technical field
The present invention relates to the organic electroluminescent field, be specifically related to a kind of OLED device that does not contain barrier rib, the invention still further relates to the preparation method of this OLED device.
Background technology
Along with the interest of information display being increased and the demand of portable information medium increases, research and the commercialization of the lighter and thinner flat-panel monitor (FPD) that can replace conventional display device cathode ray tube (CRT) are actively being carried out.Wherein, that display of organic electroluminescence (OLED) has is frivolous, self-luminous, low-power consumption, the visual angle is wide and the advantage such as fast response time, has been regarded as the rising star of flat-panel monitor.
OLED is as current driving element, and its luminosity is to decide according to the size by electric current, therefore at present OLED is applied on the matrix form display, namely by the size of control OLED drive current, reaches the effect that shows different brightness.According to the difference of type of drive, the matrix form display can be divided into passive matrix device (PMOLED) and active-matrix device (AMOLED).PMOLED adopts the in proper order mode of driven sweep line, drives one by one the pixel be positioned at different ranks, have moment produce that the electric power of high brightness, consumption is many, the life-span lacks, display module more deteriorated, be not suitable for the shortcomings such as large picture high-resolution is luminous; The active-matrix device then is to form independently image element circuit in each pixel, utilizes image element circuit to regulate the drive current size of OLED, is suitable for the requirement of large picture and high-res; But because the panel designs time-histories of PMOLED is short, processing procedure is simple, the OLED product of small size or low resolution adopts by braking technique more.Take PMOLED as example, existing OLED processing procedure comprises 3 road gold-tinted processing procedures or 3 road photomasks at least, such as the disclosed a kind of display floater of Chinese patent literature CN101290905A and method for manufacturing lead thereof, the display panel structure that proposes as shown in Figure 1, one substrate namely at first is provided, in the viewing area of substrate, form anode pattern, need first gold-tinted processing procedure; Then in the viewing area, form the insulating medium layer between anode pattern, need second gold-tinted processing procedure; Each insulating medium layer in the viewing area forms non-conterminous barrier rib (RIB), needs the 3rd road gold-tinted processing procedure; Utilize at last this barrier rib as shade, at barrier rib and wire end face spraying organic layer and negative electrode.By barrier rib the obstruct negative electrode is set, to avoid the series connection overlap joint between the conductive layer.To sum up, this device architecture and manufacturing process more complicated all.
Summary of the invention
Technical problem to be solved by this invention is the OLED device architecture complexity that contains barrier rib in the prior art, thereby a kind of OLED device that does not contain barrier rib is provided;
Second technical problem that the present invention will solve is that the OLED device preparation method who contains barrier rib in the prior art is too complicated, craft precision requires the problem high, that cost is high, thereby a kind of preparation method who does not contain the OLED device of barrier rib is provided, and provides the method prepared OLED device.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of OLED device comprises:
Substrate;
Viewing area: be included in the first electrode layer 12, the first organic layer 15 and the second electrode lay that described substrate is cascading;
Non-display area: be formed on the first electrode layer, described non-display area is provided with the lead district that the common port that the first electrode layer and the second electrode lay are connected with driving chip or circuit board goes between and the scanning end lead-in wire consists of;
Be provided with the insulating medium layer that is arranged on described the first organic layer on described the first electrode layer for isolation on the first electrode layer of described viewing area, described insulating medium layer upper end is provided with described the second organic layer.
The length direction of described insulating medium layer is parallel to described common port lead-in wire and described viewing area is divided into some pixel regions.
The second electrode lay pattern of described the second electrode lay be strip, its length direction is parallel to described common port lead-in wire.
The width of described the second electrode lay pattern is the 1/3-1/2 of pixel region width, and is arranged in the middle of the described pixel region 17.
Described insulating medium layer is the light sensitivity insulating resin layer.
Described light sensitivity insulating resin layer is polyimide layer.
Described the second electrode lay pattern extends to described lead district, the described lead district of some or all of covering.
Described the first organic layer is luminescent layer.
Described the first organic layer and the second organic layer are identical or different, comprise respectively luminescent layer and functional layer.
Described functional layer comprises one or more layers combination in hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer, the electron injecting layer.
The thickness of described the first electrode layer (12) is 120-180nm;
The thickness of described the first organic layer (15) and described the second organic layer (151) is identical or different, is respectively 200-250nm;
The thickness of described the second electrode lay is 170-300nm;
The thickness of described insulating medium layer (13) is 1800nm.
A kind of OLED device preparation method said method comprising the steps of:
S1, at substrate preparation the first electrode layer, and prepare the first electrode pattern by etching technics, and form viewing area and non-display area at substrate;
The viewing area coating insulating medium layer of S2, the first electrode pattern of in step S1, making;
S3, prepare common port lead-in wire and scanning end lead-in wire in the lead district of described non-display area;
S4, make organic layer in the viewing area, described organic layer comprises the first organic layer 15 of being distributed between the described insulating medium layer and the second organic layer of insulating medium layer upper end, and the thickness of described the first organic layer is less than the thickness of described insulating medium layer;
S5, by the shadow mask mask at described the first organic layer deposition or sputter the second electrode lay.
Prepare the dielectric layer pattern by etching technics among the described step S2, described dielectric layer pattern is strip, and length direction is parallel to common port lead-in wire, and shape of cross section is trapezoidal, and upper surface is less than lower surface.
The OLED device that a kind of preparation method of above-mentioned OLED device is prepared.
Technique scheme of the present invention has the following advantages compared to existing technology:
1. OLED device preparation method provided by the present invention, use shadow mask mask the second electrode lay to be set to strip, substitute the second electrode lay of cutting apart continuous face structure with barrier rib, to avoid the series connection overlap joint of conductive layer between pixel, cancelled the barrier rib processing procedure, not only saved technological process and cost of manufacture, and device architecture and production technology are simpler.
2. the second electrode lay does not adopt whole evaporation or sputter mode, uses the shadow mask mask that the pattern of strip structure is set, and has saved the second electrode material; And because coverage rate is little, increased to a certain extent aperture opening ratio.
3, described shadow mask mask technique technical maturity, precision is high, effectively reduces technology difficulty and cost.
Description of drawings
For content of the present invention is more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is OLED device profile structural representation in the prior art;
Fig. 2 is the actual design figure of the device of OLED shown in Fig. 1;
Fig. 3 is OLED device profile structural representation of the present invention;
Fig. 4 is the device of OLED shown in Fig. 3 actual design figure.
Fig. 5 is the second electrode lay actual design figure of the device of OLED described in Fig. 3.
Reference numeral is expressed as among the figure: 1-viewing area, 11-substrate, 12-the first electrode layer, 13-insulating medium layer, 14-barrier rib, 15-the first organic layer, 151-the second organic layer, 16-the second electrode lay, 161-the second electrode lay pattern, 17-pixel region, 2-non-display area, 21-lead district, 25-organic layer border, 26-the second electrode lay border.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Present embodiment is the embodiment of OLED device preparation, and described OLED device comprises: substrate 11; Viewing area 1: be included in the first electrode layer 12, the first organic layer 15 and the second electrode lay 16 that described substrate is cascading; Non-display area 2: be formed on the first electrode layer 12, described non-display area is provided with and the first electrode layer 12 is connected with the second electrode lay and drives the go between lead district 21 of formation of common port lead-in wire that chip or circuit board be connected and scanning end; Be provided with the insulating medium layer 13 that is arranged on described the first organic layer 15 on described the first electrode layer 12 for isolation on the first electrode layer 12 of described viewing area 1, described insulating medium layer 13 upper ends are provided with described the second organic layer 151.The pattern of described insulating medium layer 13 is strip, its length direction is parallel to described common port lead-in wire and described viewing area is divided into some pixel regions 17, and each pixel region comprises the first electrode layer, organic layer and the second electrode lay that is cascading.The second electrode lay pattern 161 of described the second electrode lay 16 be strip, its length direction is parallel to described common port lead-in wire.The width of described the second electrode lay pattern 161 is the 1/3-1/2 of pixel region 17 width, and is arranged in the middle of the described pixel region 17.Described insulating medium layer 13 is the light sensitivity insulating resin layer.Described light sensitivity insulating resin layer is preferably polyimide layer.Described the second electrode lay pattern 161 extends to described lead district, and the described lead district of some or all of covering guarantees the conducting in described the second electrode lay and described lead-in wire zone.
Concrete preparation method is as follows:
S1, at substrate 11 preparation the first electrode layer 12, and prepare the first electrode pattern by etching technics, and form viewing area 1 and non-display area 2 at substrate;
Substrate described in the present embodiment 11 is selected glass substrate, and the first electrode layer 12 is the ITO(tin indium oxide) layer, thickness is 150nm, the spacing of ITO pattern is 20 μ m.Described substrate 11 can also be quartz base plate or macromolecule flexible base, board; Described the first electrode layer 12 also can select other printing opacities or lighttight high-work-function metal or alloy to prepare according to the light emission direction of device, such as indium zinc oxide etc., all can realize purpose of the present invention, belongs to protection scope of the present invention.
The viewing area 1 coating insulating medium layer 13 of S2, the first electrode pattern of in step S1, making;
Insulating medium layer described in the present embodiment 13 is polyimides (PI) layer, the preparation embodiment of described dielectric layer pattern is with known photoetching process, namely by using light shield to reach development effect, uv-exposure forms etching group, by etching solution etching PI pattern.The thickness of described PI layer is 1.8
Um, described dielectric layer pattern is strip, and the parallel described common port lead-in wire of length direction, and cross section is trapezoidal, and the upper bottom surface width is less than the bottom surface width, 30 °-60 ° of the gradient scopes of described trapezoidal two waists.
S3, prepare common port lead-in wire and scanning end lead-in wire in the lead district of described non-display area 2;
Embodiment is with known lead-in wire preparation technology.In the present embodiment, sputter one deck molybdenum aluminium molybdenum on the ITO layer in described lead-in wire zone, thickness is 400-700nm, the while etching surface is coated with the ITO layer of molybdenum aluminium molybdenum again, preparation common port lead-in wire and scanning end lead-in wire.
S4, make organic layer in the viewing area, described organic layer comprises the first organic layer 15 of being distributed between the described insulating medium layer 13 and the second organic layer 151 of insulating medium layer 13 upper ends, and the thickness of described the first organic layer 15 is less than the thickness of described insulating medium layer 13;
The specific embodiment mode of this step is with the preparation method of organic layer in the known OLED device, and described the first organic layer 15 and the second organic layer 151 can only be luminescent layer; Also can be comprised of luminescent layer and functional layer, wherein said functional layer comprises one or more layers combination in hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer, the electron injecting layer.Each layer in the described organic layer can be by the known method preparation such as spin coating, evaporation, vapour deposition.Organic layer comprises hole injection layer, luminescent layer and electron injecting layer in the present embodiment; Adopt the mode of evaporation to prepare, the thickness of the described organic layer that forms at described the first electrode layer is 1.3um, less than the thickness of insulating medium layer prepared among the step S2.And organic layer described in the present embodiment is the partial coverage non-display area also.
S5, by the shadow mask mask at described the first organic layer deposition or sputter the second electrode lay 16.
Spacing between described the second electrode lay pattern and the adjacent pixel regions must be greater than 50um.
The 16 aluminium metal levels of the second electrode lay described in the present embodiment; the compound the second electrode lay 16 of selecting metal, alloy or the multiple layer metal of other transparent or opaque low work functions or alloy and antireflection layer to consist of according to the light emission direction of device all can be used as the second electrode lay material; such as Mg layer, Al layer, Ag/Li alloy-layer etc.; all can realize purpose of the present invention, belong to protection scope of the present invention.
Used shadow mask mask is available from Kunshan Yunshengji Photoelectric Technology Co., Ltd in the present embodiment, and the designing and making tolerance of this shadow mask mask is 5um.
In the present embodiment, the width of described pixel region 17 is 0.19mm, and the width of described the second electrode pattern 161 is 0.07mm, and the spacing between described the second electrode lay pattern 161 and the adjacent pixel regions 17 is 60um, and thickness is 190nm.
In other embodiments of the invention, the width of described the second electrode lay pattern 161 is the 1/3-1/2 of pixel region width, and must be greater than the designing and making tolerance of described shadow mask mask; Spacing between described the second electrode lay pattern 161 and the adjacent pixel regions 17 will be guaranteed the separation of adjacent two described the second electrode lay patterns 161; The thickness of described the second electrode lay 16 all can be realized purpose of the present invention in the 170nm-300nm scope, belong to protection scope of the present invention.
Two ends on described the second electrode lay pattern 161 length directions all extend to the described lead district 21 of both sides.
Use described shadow mask mask that the second electrode lay pattern 161 is set to strip, substitute the second electrode lay 16 of cutting apart continuous face structure with barrier rib 14, to avoid the series connection overlap joint of 17 conductive layers of pixel region, cancelled the processing procedure of barrier rib 14, not only saved technological process and cost of manufacture, and device architecture and production technology are simpler.The second electrode lay 16 does not adopt whole evaporation or sputter mode, uses the shadow mask mask that the pattern of strip structure is set, and has saved the second electrode material; And because coverage rate is little, increased to a certain extent aperture opening ratio.
Described shadow mask mask technique technical maturity, precision is high, effectively reduces technology difficulty and cost.
Obviously, above-described embodiment only is for example clearly is described, and is not the restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here need not also can't give all execution modes exhaustive.And the apparent variation of being extended out thus or change still are among the protection range of the invention.
Claims (14)
1. OLED device comprises:
Substrate (11);
Viewing area (1): be included in the first electrode layer (12), the first organic layer (15) and the second electrode lay (16) that described substrate is cascading;
Non-display area (2): be formed on the first electrode layer (12), described non-display area is provided with and makes the first electrode layer (12) be connected 16 with the second electrode lay) the common port lead-in wire that is connected with driving chip or circuit board and the lead district (21) of scanning end lead-in wire formation; It is characterized in that:
Be provided with the insulating medium layer (13) that is arranged on described the first organic layer (15) on described the first electrode layer (12) for isolation on first electrode layer (12) of described viewing area (1), described insulating medium layer (13) upper end is provided with described the second organic layer (151).
2. OLED device according to claim 1 is characterized in that:
The length direction of described insulating medium layer (13) is parallel to described common port lead-in wire and described viewing area is divided into some pixel regions (17).
3. OLED device according to claim 1 and 2 is characterized in that:
The second electrode lay pattern (161) of described the second electrode lay (16) be strip, its length direction is parallel to described common port lead-in wire.
4. according to claim 2 or 3 described OLED devices, it is characterized in that: the width of described the second electrode lay pattern (161) is the 1/3-1/2 of pixel region (17) width, and is arranged in the middle of the described pixel region (17).
5. arbitrary described OLED device according to claim 1-4 is characterized in that:
Described insulating medium layer (13) is the light sensitivity insulating resin layer.
6. OLED device according to claim 5, it is characterized in that: described light sensitivity insulating resin layer is polyimide layer.
7. arbitrary described OLED device according to claim 3-6, it is characterized in that: described the second electrode lay pattern (161) extends to described lead district, the described lead district of some or all of covering.
8. arbitrary described OLED device according to claim 1-7, it is characterized in that: described the first organic layer (15) is luminescent layer.
9. arbitrary described OLED device according to claim 1-7, it is characterized in that: described the first organic layer (15) and the second organic layer (151) are identical or different, comprise respectively luminescent layer and functional layer.
10. OLED device according to claim 9, it is characterized in that: described functional layer comprises one or more layers combination in hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer, the electron injecting layer.
11. arbitrary described OLED device according to claim 1-10 is characterized in that:
The thickness of described the first electrode layer (12) is 120-180nm;
The thickness of described the first organic layer (15) and described the second organic layer (151) is identical or different, is respectively 200-250nm;
The thickness of described the second electrode lay is 170-300nm;
The thickness of described insulating medium layer (13) is 1800nm.
12. an OLED device preparation method is characterized in that, said method comprising the steps of:
S1, at substrate (11) preparation the first electrode layer (12), and prepare the first electrode pattern by etching technics, and form viewing area (1) and non-display area (2) at substrate;
Viewing area (1) the coating insulating medium layer (13) of S2, the first electrode pattern of in step S1, making;
S3, prepare the common port lead-in wire and scanning end goes between in the lead district of described non-display area (2);
S4, make organic layer in the viewing area, described organic layer comprises second organic layer (151) of the first organic layer (15) of being distributed between the described insulating medium layer (13) and insulating medium layer (13) upper end, and the thickness of described the first organic layer (15) is less than the thickness of described insulating medium layer (13);
S5, by the shadow mask mask at described the first organic layer deposition or sputter the second electrode lay (16).
13. OLED device according to claim 12, it is characterized in that: prepare the dielectric layer pattern by etching technics among the described step S2, described dielectric layer pattern is strip, and length direction is parallel to the common port lead-in wire, shape of cross section is trapezoidal, and upper surface is less than lower surface.
14. the prepared OLED device of preparation method of a claim 12 or 13 described OLED devices.
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| CN108630729A (en) * | 2017-03-24 | 2018-10-09 | 上海和辉光电有限公司 | A kind of structure and method improving OLED pixel defect |
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