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CN103011801B - Method for preparing ATO-based PTC (positive temperature coefficient) material - Google Patents

Method for preparing ATO-based PTC (positive temperature coefficient) material Download PDF

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Publication number
CN103011801B
CN103011801B CN201110288889.4A CN201110288889A CN103011801B CN 103011801 B CN103011801 B CN 103011801B CN 201110288889 A CN201110288889 A CN 201110288889A CN 103011801 B CN103011801 B CN 103011801B
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ato
based ptc
glass powder
mass
raw material
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CN103011801A (en
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李志祥
许高杰
李勇
蒋俊
段雷
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Ningbo Institute of Material Technology and Engineering of CAS
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Ningbo Institute of Material Technology and Engineering of CAS
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Abstract

The invention relates to a method for preparing an ATO-based PTC (positive temperature coefficient) material, comprising the following steps: preparing PS glass powder by using diammonium phosphate and stannous oxide or by using diammonium hydrogen phosphate and stannous oxide; mixing 5-40% by mass of PS glass powder, 40-90% by mass of tin source matter, 1-30% by mass of antimony source material and 0-25% by mass of doping agent; pressing and forming the mixed powder, and treating at the temperature of 300-1,200 DEG C for 0.5-48 hours to obtain the ATO-based PTC material. The raw materials adopted by the method do not comprise lead or other raw materials which can cause severe pollution to environment, thereby causing less pollution to environment. The heat treatment temperature of the prepared ATO-based PTC material is reduced significantly, and the energy consumption is reduced. The prepared ATO-based PTC material has the advantage of good chemical stability of the SnO2-based material. The method has the advantages that raw materials are easily available, procedures are short, the process is simple, requirements on equipment are low, cost is low, industrialization is easy to realize. The ATO-based PTC material can be used in the acidic, neutral and alkaline conditions and has a wide range of application.

Description

A kind of preparation method of ATO matrix PTC material
Technical field
The present invention relates to a kind of preparation method of ATO matrix PTC material, ATO material prepared by the method can be applied to automatic control heating field.This materials chemistry character is stable, can under the severe chemical environment such as strong acid, highly basic, use.
Background technology
Tindioxide (SnO 2) be that a kind of energy gap is the N-shaped semiconductor material of 3.6eV.Due to its high electron mobility (109.56cm 2/ Vs), high carrier concentration (1.23 × 1O 19cm 3), high light transmittance, the physicochemical property such as high refractive index (1.9-2) and stability at elevated temperature, doping and unadulterated SnO 2based transparent film is used widely, as for anti-electrostatic filler, and transparent conducting coating, ultraviolet shielded film, gas sensor, photo-electric display, solar cell, lithium ion cell electrode, the aspects such as voltage dependent resistor.
Material has PTC (Positive Temperature Coefficient) effect, and the resistance value of material increases along with the rising of temperature.General most metals has positive temperature coefficient, and pottery has NTC (Negative TemperatureCoefficient) effect mostly, for the pottery with PTC effect, is called PTC pottery.Because pottery has good resistance to elevated temperatures and antioxidant property, so PTC pottery is generally all for the preparation of automatic control heating material.According to the peculiar resistance-temperature of this material, current-voltage and electric current-timing relationship characteristic, be all widely used at aspects such as computer, communication equipment, conditioning unit, refrigerator, beauty appliance, electric prospection, electronic toys.Traditional PTC pottery is mainly with BaTiO 3and PbTiO 3base ceramic main, because lead-containing materials easily causes environmental pollution in use and production process, at present, the use of lead-containing materials has strictly been limited in a lot of countries and regions.BaTiO 3base pottery, due to Curie temperature lower (Tc~120 DEG C), generally can only be applied in low temperature field, and BaTiO 3the sintering temperature very high (1300 DEG C of >) of pottery, energy consumption is larger.The SnO of Sb doping 2electro-conductive material has the advantages such as power density is high, chemical stability good, low pollution, be widely used at present the field such as foot basin heating tube, small-sized bottled water station heating tube, but because ATO pottery has NTC effect, give certain hidden danger that used of seat belts, therefore, be necessary to develop ATO matrix PTC material.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of preparation method of ATO matrix PTC material, the method raw material is easy to get, technique is simple, not high to equipment requirements, cost is low, be easy to industrialization, and the ATO materials chemistry character of preparation is stable, can under the severe chemical environment such as strong acid, highly basic, use.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of preparation method of ATO matrix PTC material, is characterized in that comprising the following steps:
1) prepare PS glass powder: with Secondary ammonium phosphate, tin protoxide, or taking Secondary ammonium phosphate, tin protochloride as raw material, the P in raw material 2o 5with the mol ratio of Sn be 0.2~0.9, after raw material is mixed, 400~1000 DEG C of thermal treatments 10~100 minutes, glass melt is quenched, grind and obtain PS glass powder;
2) by tin source material, antimony source material, doping agent, and the binding agent of employing PS glass powder, according to massfraction 40~90%, 1%~30%, 0%~25% and 5%~40% mixes;
3), by after above-mentioned mixed pressed by powder moulding, within 0.5~48 hour, obtain ATO matrix PTC material 300~1200 DEG C of thermal treatments.
As preferably, described tin source material is any one of tindioxide, stannous oxalate, tin protochloride, or the mixture of their arbitrary combination.
As preferably, described antimony source material is the mixture of antimonous oxide, butter of antimony or their arbitrary combination.
As preferably, described doping agent is the mixture of cerium dioxide, cobalt oxide or their arbitrary combination.
As preferably, described step 1) raw material in P 2o 5with the mol ratio of Sn be 0.2~0.4.
Finally, described step 3) in thermal treatment temp be 400~800 DEG C, time 2 h.
Compared with prior art, the invention has the advantages that: in starting material, do not contain the plumbous raw material that waits serious environment pollution, do not disturb less to environment; With respect to BaTiO 3pottery (1300 DEG C of sintering temperature >) and traditional ATO pottery (1400 DEG C of sintering temperature >), thermal treatment temp significantly reduces, and energy consumption declines; In addition, as a kind of novel ATO material, it has SnO 2the advantage that sill chemical stability is good, can be applied to the severe field of chemical environment of strong acid, highly basic etc.The raw material that this preparation method adopts is easy to get, and flow process is few, and technique is simple, and not high to equipment requirements, cost is low, is easy to industrialization.
Brief description of the drawings
Fig. 1 a-1c: the electromicroscopic photograph of product;
Fig. 2 a-2c: the X-ray diffractogram of product;
Fig. 3 a-3c: the resistance-temperature curve of product.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
Embodiment 1
Taking Secondary ammonium phosphate and tin protoxide as raw material, P 2o 5with the mol ratio of Sn be 0.3, after raw material is mixed, 900 DEG C of thermal treatments 15 minutes, then by shrend, the glass dregs of acquisition is pulverized, obtain PS glass powder.Take the PS glass powder of 1 gram, the stannous oxalate of 5 grams, the tin protochloride of 0.2 gram, the antimonous oxide of 0.5 gram, the cerium dioxide of 0.1 gram, above-mentioned raw materials is mixed, and compression moulding, then 600 degree thermal treatment 2 hours, obtain product a, the stereoscan photograph of product a is shown in Fig. 1 a, and x-ray diffractogram of powder is shown in Fig. 2 a, resistance-temperature curve 3a of product.
Embodiment 2
Taking Secondary ammonium phosphate and tin protochloride as raw material, P 2o 5with the mol ratio of Sn be 0.4, after raw material is mixed, 600 DEG C of thermal treatments 15 minutes, then by shrend, the glass dregs of acquisition is pulverized, obtain PS glass powder.Take the PS glass powder of 1.5 grams, the tindioxide of 5 grams, the antimonous oxide of 0.5 gram, the cerium dioxide of 0.3 gram, mixes above-mentioned raw materials, compression moulding, then 500 degree thermal treatment 2 hours, obtain product b, the stereoscan photograph of product b is shown in Fig. 1 b, x-ray diffractogram of powder is shown in Fig. 2 b, resistance-temperature curve 3b of product.
Embodiment 3
Taking Secondary ammonium phosphate and tin protoxide as raw material, P 2o 5with the mol ratio of Sn be 0.3, after raw material is mixed, 900 DEG C of thermal treatments 15 minutes, then by shrend, the glass dregs of acquisition is pulverized, obtain PS glass powder.Take the PS glass powder of 1.0 grams, the stannous oxalate of 5 grams, the antimonous oxide of 0.4 gram, the cerium dioxide of 0.25 gram, 0.2 gram of cobalt oxide, above-mentioned raw materials is mixed, and compression moulding, then 500 degree thermal treatment 2 hours, obtain product c, the stereoscan photograph of product c is shown in Fig. 1 c, and x-ray diffractogram of powder is shown in Fig. 2 c, resistance-temperature curve 3c of product.

Claims (3)

1. a preparation method for ATO matrix PTC material, is characterized in that comprising the following steps:
1) prepare PS glass powder: with Secondary ammonium phosphate, tin protoxide, or taking Secondary ammonium phosphate, tin protochloride as raw material, the P in raw material 2o 5with the mol ratio of Sn be 0.2~0.9, after raw material is mixed, 400~1000 DEG C of thermal treatments 10~100 minutes, glass melt is quenched, grind and obtain PS glass powder;
2) by tin source material, antimony source material, doping agent, and the binding agent of employing PS glass powder, according to massfraction 40~90%, 1%~30%, 0%~25% and 5%~40% mixes;
3), by after above-mentioned mixed pressed by powder moulding, within 0.5~48 hour, obtain ATO matrix PTC material 300~1200 DEG C of thermal treatments;
Described tin source material is any one of tindioxide, stannous oxalate, tin protochloride, or the mixture of their arbitrary combination;
Described antimony source material is the mixture of antimonous oxide, butter of antimony or their arbitrary combination;
Described doping agent is the mixture of cerium dioxide, cobalt oxide or their arbitrary combination.
2. preparation method according to claim 1, is characterized in that described step 1) raw material in P 2o 5with the mol ratio of Sn be 0.2~0.4.
3. preparation method according to claim 1, is characterized in that described step 3) in thermal treatment temp be 400~800 DEG C, time 2 h.
CN201110288889.4A 2011-09-21 2011-09-21 Method for preparing ATO-based PTC (positive temperature coefficient) material Active CN103011801B (en)

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Publication number Priority date Publication date Assignee Title
CN104073027B (en) * 2014-06-20 2015-12-02 广西纳拓科技有限公司 The preparation method of tin-antiomony oxide water nano dispersed paste
CN110156326B (en) * 2018-02-11 2021-11-26 天津理工大学 Fluorescent glass ceramic based on low-melting-point glass powder and preparation method thereof

Citations (3)

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US4598055A (en) * 1984-04-11 1986-07-01 U.S. Philips Corporation Method of manufacturing ceramic sintered bodies
DE10110789C1 (en) * 2001-03-06 2002-07-04 Schott Glas Electrical cooking appliance with non-planar three-dimensional cooking surface of glass or glass ceramic material directly contacted on its outside by resistance heating device
CN101567239A (en) * 2009-06-02 2009-10-28 上海科特高分子材料有限公司 Positive temperature coefficient over-current protection device and preparation method

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JPH0388302A (en) * 1989-08-31 1991-04-12 Meidensha Corp Ptc resistor
JPH0435001A (en) * 1990-05-31 1992-02-05 Meidensha Corp Positive temperature coefficient resistor material
JP2010021028A (en) * 2008-07-10 2010-01-28 Hong Kong Seiryu Yugenkoshi Planar heating element and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
US4598055A (en) * 1984-04-11 1986-07-01 U.S. Philips Corporation Method of manufacturing ceramic sintered bodies
DE10110789C1 (en) * 2001-03-06 2002-07-04 Schott Glas Electrical cooking appliance with non-planar three-dimensional cooking surface of glass or glass ceramic material directly contacted on its outside by resistance heating device
CN101567239A (en) * 2009-06-02 2009-10-28 上海科特高分子材料有限公司 Positive temperature coefficient over-current protection device and preparation method

Non-Patent Citations (3)

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Title
JP特开2010-21028A 2010.01.28
JP特开平3-88302A 1991.04.12
JP特开平4-35001A 1992.02.05

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