CN103018688B - Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor - Google Patents
Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor Download PDFInfo
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Abstract
一种GMI和GMR相结合的磁敏传感器件，属于磁传感器技术领域。包括位于同一衬底基片上的GMI结构单元和GMR结构单元，GMI结构单元和GMR结构单元之间采用金属连接电极实现串联。本发明在确凿的理论分析和实验验证的基础上，将GMR磁敏传感器的工作模式由直流驱动变为交流驱动，同时兼顾GMI磁敏传感器和GMR磁敏传感器的灵敏度选择合适的驱动频率。本发明提供的GMI和GMR相结合的磁敏传感器件，采用同一低频交流驱动信号，在弱磁场和强磁场下分别通过GMI结构单元和GMR结构单元实现对磁场的测量。克服了现有GMI磁敏传感器和GMR磁敏传感器固有的缺点，能够实现0~2000Gauss全量程范围的高精度测量。
The invention discloses a magnetic sensitive sensing device combining GMI and GMR, which belongs to the technical field of magnetic sensors. It includes the GMI structural unit and the GMR structural unit located on the same substrate, and the GMI structural unit and the GMR structural unit are connected in series by using metal connection electrodes. On the basis of conclusive theoretical analysis and experimental verification, the present invention changes the working mode of the GMR magnetic sensor from DC drive to AC drive, and selects an appropriate drive frequency taking into account the sensitivity of the GMI magnetic sensor and the GMR magnetic sensor. The magnetosensitive sensing device combined with GMI and GMR provided by the present invention adopts the same low-frequency AC driving signal to realize the measurement of the magnetic field through the GMI structural unit and the GMR structural unit respectively under weak magnetic field and strong magnetic field. It overcomes the inherent shortcomings of the existing GMI magnetic sensor and GMR magnetic sensor, and can realize high-precision measurement in the full range of 0~2000Gauss.
Description
技术领域technical field
本发明属于磁传感器技术领域，涉及巨磁阻抗和巨磁电阻相结合的磁敏传感器。The invention belongs to the technical field of magnetic sensors and relates to a magnetic sensitive sensor combined with giant magnetoresistance and giant magnetoresistance.
背景技术Background technique
巨磁阻抗效应（Giant Magneto-impedance,简称GMI）是由日本名古屋大学K.Mohri在1992年发现并提出的，是指在一定频率的交流信号激励下，材料的阻抗随着外加磁场的变化而发生显著变化的效应。非晶软磁丝、薄带及其薄膜复合结构的材料都具有较大的GMI效应。S.Xiao等人利用射频溅射法制备的Fe73.5Si13.5B9Cu1Nb3/Cu/Fe73.5Si13.5B9Cu1Nb3三层膜中观察到阻抗变化率高达1700%，灵敏度高达87%/Oe（Phy.Rev.B 2000,61,5734-5739）。GMI磁敏传感器就是基于GMI效应的高灵敏磁场传感器，其阻抗变化率由公式算出，其中Z(H)，Z(0)分别为有、无外加磁场时的阻抗。GMI磁场传感器是典型的交流驱动器件，可采用高频交流驱动信号予以激励，但其缺点是所测磁场范围较窄，一般为0~几十高斯。The giant magneto-impedance effect (Giant Magneto-impedance, referred to as GMI) was discovered and proposed by K. Mohri of Nagoya University in Japan in 1992. Significantly changed effects. Amorphous soft magnetic wires, thin strips and their thin-film composite structures all have large GMI effects. S.Xiao et al . observed that the impedance change rate was as high as 1700% and the sensitivity was as high as 87%/Oe (Phy. Rev. B 2000, 61, 5734-5739). The GMI magnetic sensor is a highly sensitive magnetic field sensor based on the GMI effect, and its impedance change rate is given by the formula Calculate, where Z(H), Z(0) are impedances with and without an external magnetic field, respectively. The GMI magnetic field sensor is a typical AC drive device, which can be excited by a high-frequency AC drive signal, but its disadvantage is that the range of the measured magnetic field is narrow, generally 0 to tens of Gauss.
巨磁电阻效应Giant Magneto-resistance,简称GMR）是由德国的彼得·格林贝格和法国的艾尔伯·费尔在1988年发现的，他们因此共同获得2007年诺贝尔物理学奖，是指材料的电阻率随着外加磁场的变化而产生显著变化的效应。利用GMR效应已经形成巨磁阻磁头、存储器和磁场传感器等多种商业化器件。GR Nabiyouni等人在Si沉底的Co/Cu,Ni/Cu多层中测到可使电阻变化的磁场范围到达2000Gauss（Metrol.Meas.Syst.2009,16,519-529）。GMR磁敏传感器就是基于GMR效应的高灵敏磁场传感器，其电阻变化率由公式算出，其中R(H)，R(0)分别为有、无外加磁场时的电阻。GMR磁敏传感器虽然能够测量的磁场范围很宽（在30Gauss~2000Gauss之间），但由于受到GMR多层结构中磁性层矫顽力的限制，其磁畴翻转频率较低，通常被认为是一种典型的直流驱动器件（其驱动信号通常采用直流信号予以激励），且GMR磁敏传感器无法准确测量磁场强度小于30Gauss的微弱磁场。Giant Magneto-resistance (GMR for short) was discovered in 1988 by Peter Greenberg of Germany and Albert Ferrer of France, for which they jointly won the 2007 Nobel Prize in Physics, referring to The effect that the electrical resistivity of a material varies significantly with an applied magnetic field. A variety of commercial devices such as giant magnetoresistive heads, memories, and magnetic field sensors have been formed using the GMR effect. GR Nabiyouni et al. measured the magnetic field range that can change the resistance to 2000Gauss in the Co/Cu and Ni/Cu multilayers with Si sinking bottom (Metrol. Meas. Syst. 2009, 16, 519-529). The GMR magnetic sensor is a highly sensitive magnetic field sensor based on the GMR effect, and its resistance change rate is given by the formula Calculate, where R(H), R(0) are the resistances with and without an external magnetic field, respectively. Although the GMR magnetic sensor can measure a wide range of magnetic fields (between 30Gauss and 2000Gauss), due to the limitation of the coercive force of the magnetic layer in the GMR multilayer structure, its magnetic domain switching frequency is low, which is generally considered to be a A typical DC drive device (its drive signal is usually excited by a DC signal), and the GMR magnetic sensor cannot accurately measure a weak magnetic field with a magnetic field strength less than 30Gauss.
由此可见，GMI磁敏传感器优势是在弱磁场的高灵敏度，GMR磁敏传感器在高磁场区有较好的线性度，如何将二者结合起来，对弱、强磁场测试中的优势互补，实现在0~2000Gauss范围内高灵敏度的磁敏传感器，是本领域需要解决的技术问题。It can be seen that the advantage of GMI magnetic sensor is high sensitivity in weak magnetic field, and GMR magnetic sensor has better linearity in high magnetic field area. How to combine the two to complement the advantages in weak and strong magnetic field testing, It is a technical problem to be solved in this field to realize a magnetic sensitive sensor with high sensitivity in the range of 0~2000Gauss.
中国专利文献CN1694275号公开了基于软磁多层膜下的GMI效应的磁敏传感器件，中国专利文献CN102323554号公开了集成线圈偏置下的GMR效应的磁敏传感器件。此外，还有很多关于巨磁阻抗和巨磁电阻设计的磁敏传感器件，但是将GMI和GMR两种磁场传感器结合起来形成一种能够同时准确测量弱磁场和强磁场的新型磁场传感器，到目前为止国内外专利均无相关报道。Chinese patent document CN1694275 discloses a magnetosensitive sensor device based on the GMI effect under a soft magnetic multilayer film, and Chinese patent document CN102323554 discloses a magnetosensitive sensor device integrated with a GMR effect under coil bias. In addition, there are many magnetosensitive sensor devices designed for giant magnetoresistance and giant magnetoresistance, but the combination of GMI and GMR magnetic field sensors forms a new type of magnetic field sensor that can accurately measure weak and strong magnetic fields at the same time. So far, there are no relevant reports on domestic and foreign patents.
发明内容Contents of the invention
本发明提供一种GMI和GMR相结合的磁敏传感器件，通过将GMI磁敏传感器和GMR磁敏传感器串联集成在同一衬底基片上，利用两种器件各自的优势互补性，采用交流信号驱动，形成0~2000Gauss范围内的全量程、高精度磁场传感器。The present invention provides a magnetic sensitive sensing device combining GMI and GMR, by integrating the GMI magnetic sensitive sensor and the GMR magnetic sensitive sensor in series on the same substrate, utilizing the complementary advantages of the two devices, and adopting an AC signal to drive the , forming a full-scale, high-precision magnetic field sensor within the range of 0~2000Gauss.
本发明技术方案如下：Technical scheme of the present invention is as follows:
一种GMI和GMR相结合的磁敏传感器件，如图1、2所示，包括位于同一衬底基片1上的GMI结构单元2和GMR结构单元3；所述GMI结构单元2和GMR结构单元3之间具有金属连接电极4实现二者相互串联，GMI结构单元2另一端具有金属电极5作为整个磁敏传感器件的输入或输出电极，GMR结构单元3另一端具有金属电极6作为整个磁敏传感器件的输出或输入电极。A kind of magnetosensitive sensing device that GMI and GMR combine, as shown in Figure 1, 2, comprise the GMI structural unit 2 and the GMR structural unit 3 that are positioned on the same substrate substrate 1; Said GMI structural unit 2 and GMR structure There is a metal connection electrode 4 between the units 3 to realize the two are connected in series. The other end of the GMI structural unit 2 has a metal electrode 5 as the input or output electrode of the entire magnetic sensor device, and the other end of the GMR structural unit 3 has a metal electrode 6 as the entire magnetic sensor. Output or input electrodes of sensitive devices.
本发明提供的GMI和GMR相结合的磁敏传感器件，使用时如图3所示，在GMI结构单元2和GMR结构单元3形成的串联电路两端输入交流驱动信号，然后在待测磁场环境中分别提取GMI结构单元2两端、GMR结构单元3两端，以及GMI结构单元2和GMR结构单元3形成的串联电路两端的电压信号VGMI、VGMR、VGMI+GMR送入后续处理电路经计算、判断得到待测磁场大小。The magnetosensitive sensing device combined with GMI and GMR provided by the present invention, when used, as shown in Figure 3, input the AC drive signal at both ends of the series circuit formed by the GMI structural unit 2 and the GMR structural unit 3, and then in the magnetic field environment to be measured Extract the voltage signals V GMI , V GMR , V GMI +GMR at both ends of the GMI structural unit 2, the two ends of the GMR structural unit 3, and the two ends of the series circuit formed by the GMI structural unit 2 and the GMR structural unit 3 respectively, and send them to the subsequent processing circuit The size of the magnetic field to be measured is obtained through calculation and judgment.
本发明的实质是将GMI磁敏传感器和GMR磁敏传感器串联集成在同一衬底基片上，利用两种器件各自的优势互补性，采用交流信号驱动，形成0~2000Gauss范围内的全量程高精度磁场传感器。The essence of the present invention is to integrate the GMI magnetic sensor and the GMR magnetic sensor in series on the same substrate, utilize the complementary advantages of the two devices, and use the AC signal drive to form a full range of high precision within the range of 0~2000Gauss Magnetic field sensor.
传统观点认为GMI磁敏传感器是交流信号驱动，而GMR磁敏传感器是直流驱动器件，因此通常认为二者无法结合在一起并采用相同的驱动信号予以激励。而实际上，GMR磁敏传感器为多层膜器件，对于采用电流垂直于膜面加载的GMR器件来说，在频率不太高的情况下，其阻抗变化与外加磁场仍然具有很好的线性关系。本专利就是以此为出发点，突破传统思维模式，将通常认为的交流驱动GMI磁敏传感器和直流驱动的GMR磁敏传感器串联在一起，采用较低频率（75~125KHz）的交流信号驱动，形成0~2000Gauss全量程、高精度磁敏传感器。The traditional view is that the GMI magnetic sensor is driven by an AC signal, while the GMR magnetic sensor is a DC drive device, so it is generally believed that the two cannot be combined and excited by the same driving signal. In fact, the GMR magnetic sensor is a multi-layer film device. For a GMR device that uses a current applied perpendicular to the film surface, its impedance change still has a good linear relationship with the applied magnetic field when the frequency is not too high. . This patent takes this as the starting point, breaks through the traditional thinking mode, and connects the generally considered AC-driven GMI magnetic sensor and the DC-driven GMR magnetic sensor in series, and is driven by a lower frequency (75~125KHz) AC signal to form 0~2000Gauss full-scale, high-precision magnetic sensor.
将上述形成的传感器接入驱动电路中，通过实验确定最佳驱动电流的频率。最佳驱动频率的选择依据是：GMI单元的磁场灵敏度要优于GMR单元，并且GMR的灵敏度会随驱动频率的增加而减小，而太低的驱动频率会降低GMI的灵敏度，二者灵敏度随频率的变化趋势如图4和图5所示。因此需要选择合适的驱动频率，达到牺牲一定的GMI性能而尽量保持GMR灵敏度的目的。经验算，本发明采用75~125KHz（优选85KHZ）的交流电作为驱动信号。Connect the sensor formed above into the driving circuit, and determine the frequency of the optimal driving current through experiments. The basis for choosing the best driving frequency is: the magnetic field sensitivity of the GMI unit is better than that of the GMR unit, and the sensitivity of the GMR will decrease with the increase of the driving frequency, and the driving frequency that is too low will reduce the sensitivity of the GMI. The changing trend of the frequency is shown in Figure 4 and Figure 5. Therefore, it is necessary to select an appropriate driving frequency to achieve the purpose of sacrificing a certain GMI performance and keeping the GMR sensitivity as much as possible. According to empirical calculation, the present invention uses 75~125KHz (preferably 85KHZ) alternating current as the driving signal.
本发明提供的GMI和GMR相结合的磁敏传感器件，并非是简单地将GMI磁敏传感器和GMR磁敏传感器串联在一起，而是在确凿的理论分析和实验验证的基础上，将GMR磁敏传感器的工作模式由直流驱动变为交流驱动，同时兼顾GMI磁敏传感器和GMR磁敏传感器的灵敏度选择合适的驱动频率来实现的。本发明提供的GMI和GMR相结合的磁敏传感器件，采用同一低频交流驱动信号，在弱磁场和强磁场下分别通过GMI结构单元和GMR结构单元实现对磁场的测量。克服了现有GMI磁敏传感器和GMR磁敏传感器固有的缺点，能够实现0~2000Gauss全量程范围的高精度测量。The magnetosensitive sensing device combining GMI and GMR provided by the present invention is not simply connecting the GMI magnetic sensor and the GMR magnetic sensor in series, but on the basis of conclusive theoretical analysis and experimental verification, the GMR magnetic The working mode of the sensitive sensor is changed from DC drive to AC drive, and at the same time, the sensitivity of the GMI magnetic sensor and the GMR magnetic sensor is selected to achieve the appropriate driving frequency. The magnetosensitive sensing device combined with GMI and GMR provided by the present invention adopts the same low-frequency AC driving signal to realize the measurement of the magnetic field through the GMI structural unit and the GMR structural unit respectively under weak magnetic field and strong magnetic field. It overcomes the inherent shortcomings of the existing GMI magnetic sensor and GMR magnetic sensor, and can realize high-precision measurement in the full range of 0~2000Gauss.
附图说明Description of drawings
图1为本发明提供的GMI和GMR相结合的磁敏传感器件结构示意图。FIG. 1 is a schematic structural diagram of a magnetically sensitive sensor device combining GMI and GMR provided by the present invention.
图2为本发明提供的另一种GMI和GMR相结合的磁敏传感器件结构示意图。Fig. 2 is a structural schematic diagram of another magnetic sensitive sensing device combining GMI and GMR provided by the present invention.
图3为本发明提供的GMI和GMR相结合的磁敏传感器件及外围电路整体框架图。Fig. 3 is an overall frame diagram of the magnetic sensitive sensing device and the peripheral circuit combined with GMI and GMR provided by the present invention.
图4为GMR结构单元在不同驱动频率下的阻抗变化率与磁场的关系曲线图。箭头方向为频率增大的方向。FIG. 4 is a graph showing the relationship between the impedance change rate and the magnetic field of the GMR structural unit at different driving frequencies. The direction of the arrow is the direction of frequency increase.
图5为GMI结构单元的阻抗变化率与驱动频率的关系曲线图。FIG. 5 is a graph showing the relationship between the impedance change rate of the GMI structural unit and the driving frequency.
图6为85KHz、10mA激励下GMI结构单元和GMR结构单元的阻抗变化率随外磁场的变化曲线。可以看出在0到30Gauss范围内，GMI结构单元的变化率大于GMR结构单元的变化率，并且在30Gauss左右两者相等；在30Guass到2000Gauss范围，GMR结构单元的变化率大于GMI结构单元的变化率。在0到30Gauss范围内GMI变化率可近似认为是线性的，在30Guass到2000Gauss范围GMR变化率可近似认为是线性的。Fig. 6 is a curve of the change rate of the impedance of the GMI structural unit and the GMR structural unit with the external magnetic field under the excitation of 85KHz and 10mA. It can be seen that in the range of 0 to 30Gauss, the change rate of the GMI structural unit is greater than that of the GMR structural unit, and the two are equal at around 30Gauss; in the range of 30Guass to 2000Gauss, the change rate of the GMR structural unit is greater than the change of the GMI structural unit Rate. The rate of change of GMI in the range of 0 to 30Gauss can be considered approximately linear, and the rate of change of GMR in the range of 30Gauss to 2000Gauss can be approximately considered linear.
图7为经过单片机处理后传感器的总输出曲线。Fig. 7 is the total output curve of the sensor after being processed by the single chip microcomputer.
具体实施方式Detailed ways
一种GMI和GMR相结合的磁敏传感器件，如图1、2所示，包括位于同一衬底基片1上的GMI结构单元2和GMR结构单元3；所述GMI结构单元2和GMR结构单元3之间具有金属连接电极4实现二者相互串联，GMI结构单元2另一端具有金属电极5作为整个磁敏传感器件的输入或输出电极，GMR结构单元3另一端具有金属电极6作为整个磁敏传感器件的输出或输入电极。A kind of magnetosensitive sensing device that GMI and GMR combine, as shown in Figure 1, 2, comprise the GMI structural unit 2 and the GMR structural unit 3 that are positioned on the same substrate substrate 1; Said GMI structural unit 2 and GMR structure There is a metal connection electrode 4 between the units 3 to realize the two are connected in series. The other end of the GMI structural unit 2 has a metal electrode 5 as the input or output electrode of the entire magnetic sensor device, and the other end of the GMR structural unit 3 has a metal electrode 6 as the entire magnetic sensor. Output or input electrodes of sensitive devices.
传感器中GMR结构单元和GMI结构单元的集成可以通过以下两种方式实现：一种是通过光刻掩膜真空镀膜工艺在同一基片上分别制备GMI结构单元2和GMR结构单元3，然后采用同样的掩膜工艺制备Cu输入和输出电极，并完成GMI结构单元2和GMR结构单3的串联连接，形成GMI和GMR相结合的磁敏传感器件，如图1所示；另一种是将现有的分立GMI结构单元2和GMR结构单元3采用粘结剂7粘接在同一基材上，通过涂覆或电镀导线形成串联连接，如图2所示。The integration of the GMR structural unit and the GMI structural unit in the sensor can be realized in the following two ways: one is to prepare the GMI structural unit 2 and the GMR structural unit 3 respectively on the same substrate through the photolithographic mask vacuum coating process, and then use the same The Cu input and output electrodes are prepared by the mask process, and the series connection of the GMI structure unit 2 and the GMR structure unit 3 is completed to form a magnetic sensor device combining GMI and GMR, as shown in Figure 1; the other is to combine the existing The discrete GMI structural unit 2 and the GMR structural unit 3 are bonded on the same substrate with an adhesive 7, and are connected in series by coating or electroplating wires, as shown in FIG. 2 .
在Si基片上，通过光刻掩膜溅射镀上制备(Co/Cu)3多层GMR结构单元3；采用Fe77Si11B5Cu3Nb4软磁非晶带制作GMI结构单元2；然后制作Cu电极将二者串联。将传感器接入激励电路中，驱动电流频率为85KHz，大小为10mA。输出经处理电路输入到单片机，依次取每一磁场下GMR结构单元3和GMI结构单元2所对应的阻抗变化率的值，结果如图6中所示。由图6可以看出在0到30Gauss范围内，GMI结构单元的变化率大于GMR结构单元的变化率，并且在30Gauss左右两者相等；在30Guass到2000Gauss范围，GMR结构单元的变化率大于GMI结构单元的变化率。在0到30Gauss范围内GMI变化率可近似认为是线性的，在30Guass到2000Gauss范围GMR变化率可近似认为是线性的。将两路信号分别输入单片机，经过计算、比较并且筛选出变化率大的信号作为输出信号，形成传感器总体的阻抗变化率曲线，结果如图7所示。On the Si substrate, the (Co/Cu) 3 multilayer GMR structural unit 3 is prepared by sputtering through a photolithographic mask; the GMI structural unit 2 is fabricated by using Fe 77 Si 11 B 5 Cu 3 Nb 4 soft magnetic amorphous tape; Then make Cu electrodes to connect the two in series. The sensor is connected to the excitation circuit, the driving current frequency is 85KHz, and the magnitude is 10mA. The output is input to the single-chip microcomputer through the processing circuit, and the value of the impedance change rate corresponding to the GMR structural unit 3 and the GMI structural unit 2 under each magnetic field is sequentially taken, and the result is shown in FIG. 6 . It can be seen from Figure 6 that in the range of 0 to 30Gauss, the rate of change of the GMI structural unit is greater than that of the GMR structural unit, and the two are equal at around 30Gauss; in the range of 30Gauss to 2000Gauss, the rate of change of the GMR structural unit is greater than that of the GMI structure The rate of change of the unit. The rate of change of GMI in the range of 0 to 30Gauss can be considered approximately linear, and the rate of change of GMR in the range of 30Gauss to 2000Gauss can be approximately considered linear. Input the two signals into the single-chip microcomputer respectively, and after calculation, comparison and screening, the signal with a large rate of change is selected as the output signal to form the overall impedance change rate curve of the sensor. The result is shown in Figure 7.
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