CN102983072B - A kind of method of diffusion of low fragmentation rate diode - Google Patents
A kind of method of diffusion of low fragmentation rate diode Download PDFInfo
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- CN102983072B CN102983072B CN201210412793.9A CN201210412793A CN102983072B CN 102983072 B CN102983072 B CN 102983072B CN 201210412793 A CN201210412793 A CN 201210412793A CN 102983072 B CN102983072 B CN 102983072B
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Abstract
The invention discloses a kind of method of diffusion of low fragmentation rate diode, mainly formed by following steps: before former Wafer Cleaning, row's phosphorus paper, expansion phosphorus, burst, one side sandblast, painting boron, clean, be coated with boron, expansion boron, the front cleaning of nickel plating, a nickel plating, alloy, secondary nickel plating, it is characterized in that: in matting, first wash by water 10 minutes soaking in mixed acid solution after 20 seconds before described nickel plating, in mixed acid solution, soak again 20 seconds, then carry out follow-up cleaning treatment.
Description
Technical field
The present invention relates to a kind of diode fabrication technique, specifically a kind of technique of being made by following steps: former silicon chip is clearPhosphorus paper, expansion phosphorus, burst, one side sandblast, the front cleaning of painting boron washed, arranged, boron, expansion boron, the front cleaning of nickel plating are coated with. This technique is applicable to low brokenThe method of diffusion of sheet rate diode.
Background technology
Traditional diode chip for backlight unit manufacture craft is following steps: former Wafer Cleaning, row's phosphorus paper, expansion phosphorus, burst, single face sprayingSand, the front cleaning of painting boron, painting boron, expansion boron, two-sided sandblast, the front cleaning of nickel plating. In above-mentioned steps, two-sided sandblast operation is silicon chip secondaryMachinery deoxidation layer, the wherein higher 1%-1.5% that generally reaches of the percentage of damage of silicon chip, improves production cost, has affected economyBenefit.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of diffusion of low fragmentation rate diode, makes silicon chip fragmentationRate is reduced to 0.4%-0.8% left and right.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of method of diffusion of low fragmentation rate diode, and mainTo be formed by following steps: before former Wafer Cleaning, row's phosphorus paper, expansion phosphorus, burst, one side sandblast, painting boron, clean, be coated with boron, expansion boron, platingCleanings before nickel, a nickel plating, alloy, secondary nickel plating, its innovative point is: in the front matting of described nickel plating first by mixed acid solutionIn soak after 20 seconds and wash by water 10 minutes, then in mixed acid solution, soak 20 seconds, then carry out follow-up cleaning treatment.
Described mixed acid solution is nitric acid 9 by volume: hydrofluoric acid 9: glacial acetic acid 12: the ratio of sulfuric acid 4.
The invention has the advantages that: the present invention's chemical treatment substitutes secondary mechanical deoxidation layer method, especially for soonRecover pipe, greatly reduce the percentage of damage of silicon chip in the time of deoxidation layer.
Detailed description of the invention
Concrete steps of the present invention are as follows:
First, former silicon chip is cleaned: silicon chip is placed in to nitration mixture pure water rinsing 5-10min after 60 seconds, then enters5 ± 0.1min in hydrofluoric acid, then use normal temperature pure water rinsing 5-10min, is then placed in silicon chip and breathes out the powder solution that rubs, and by frequency isThe ultrasonic echography of 2.8KHZ cleans 20 ± 1min, carries out hot pure water ultrasonic cleaning 20 ± 1min after pure water normal developing, lastPure water rinsing 5-10min, finishes to clean, last, carries out twice dehydration with normal temperature IPA solution, and dewatering time is 2 ± 0.1 at every turnMin, completes this operation.
Second step, row's phosphorus paper: with tweezers take out a slice phosphorus paper be placed on the 1st of any side of the gaily decorated basket and the 2nd silicon chip itBetween, the like put, carefully take off the silicon chip that accompanies phosphorus paper it be neatly placed on catch, use catch plug after sequencing silicon chipTightly enter low temperature oven.
The 3rd step, expands phosphorus: in low temperature oven, the first boat of folding silicon chip is placed in to the quartzy mouth of pipe, 150 ± 1 DEG C of preheatings15min, is pushed into quartz boat the second halfs of 280 DEG C of flat-temperature zones, and the second boat of folding silicon chip is placed in to the quartzy mouth of pipe, 150 ± 1DEG C preheating 15min, is pushed into the second boat the first half term of 280 DEG C of flat-temperature zones, and temperature is raised to rear constant temperature 1h. After time arrives, will enter phosphorusHigh temperature furnace. Nitrogen flow used: 6L/MIN, oxygen flow: 1L/MIN.
The first boat is pushed into the second half of 500 DEG C of flat-temperature zones in high temperature furnace, the second boat is pushed into 500 DEG C of flat-temperature zonesFirst half term; Constant temperature 2H after temperature is raised to 1220 DEG C; Constant temperature time finishes, and starts cooling, uses quartz in the time that temperature is down to 500 DEG CHook pulls out the second boat gradually, be pulled to take off after the cooling 15min of fire door be placed on quartz bracket naturally cooling fragmented. UseState same method the first boat is pulled out in quartz ampoule, and fragmented.
The 4th step, burst: put silicon chip in PE basket support and put into 12000cc hydrofluoric acid liquid soak (phosphorus expand after a 24h left sideThe right side, 8h left and right after boron expands), the time is placed in mobile running water and rinses about about 60min and get stainless steel plate to rear taking-up, padsUpper filter paper, divides the silicon chip separating on filter paper, sends stainless steel plate to baking oven baking 30-40min.
The 5th step, one side sandblast: silicon chip enters in vacuum blast chamber, by not attached phosphorus with the transmission speed speed of 45 ± 5cm/miFace up, with 0.9-1.3Kg/cm2Pressure carry out one side sandblast.
The 6th step, is coated with before boron and cleans: 35000cc, temperature is that pure water and the 150g of 90 DEG C ± 10 DEG C breathes out the powder solution that rubsIn carry out ultrasonic cleaning 20 ± 1min, after cleaning, carry out again normal temperature pure water clean 5-10min; Then use the hydrogen fluorine of 5000ccAcid soak 5 ± 1min, then carry out in a manner described the powder ultrasonic cleaning that rubs of the cleaning of normal temperature pure water and Kazakhstan; The powder ultrasonic cleaning that rubs in Kazakhstan is completeBi Hou, first carry out normal temperature pure water clean after 5-10min carry out again 90 DEG C ± 10 DEG C hot pure water ultrasonic cleaning 20 ± 1min, normal temperature is pureWater cleans 5-10min. After cleaning, carry out the IPA dehydration of twice routine, finally enter baking oven and dry with the temperature of 100 DEG C.
The 7th step, is coated with boron: will be coated with the special fine arts nib of boron and immerse in vial, and be stained with appropriate boron liquid: boron liquid proportioning: pressVolume ratio ethylene glycol ethyl ether: diboron trioxide=10:3, the one side that is not then coated with boron at the silicon chip of rotation is coated with last layer boron equablyLiquid, is inwardly applied to center by the silicon chip outer rim of rotating, and takes off the silicon chip coating, and is placed on electric hot plate, and 150 DEG C are dried 5-8min, getAfter lower silicon slice, on attached phosphorus face, evenly gently spill appropriate aluminium powder, then silicon chip is folded on quartz boat, and at two of whole folded silicon chipEnd must be put appropriate catch. Fold the quartz boat front and rear baffle catch jam-pack of silicon chip.
The 8th step, expands boron: the quartz boat that first is loaded with to silicon chip is placed in 650 ± 1 DEG C of preheating 30min of fire door, with quartzQuartz boat is pushed into 810 ± 2 DEG C of DEG C of flat-temperature zone second half sections by hook, and the second boat is placed in to 650 ± 1 DEG C of DEG C of preheating 30min of fire door, usesQuartz boat is pushed into 810 ± 2 DEG C of DEG C of flat-temperature zone first half sections by quartz hook, and adjusting diffusion furnace heating rate is that 5 DEG C/min is warmed up to1262 DEG C, when equitemperature is raised to 1262 DEG C, start constant temperature 24H---after the 26H time, be cooled to 600 DEG C and constant temperature to treat next timeDiffusion; Take out the method for quartz boat: the second boat is pulled out gradually with quartz hook, every 5min pull-out 5cm, is pulled to fire door coolingAfter 15min, take off, be placed on quartz bracket naturally cooling fragmentedly, the first boat is drawn in quartz ampoule by above-mentioned same methodGo out fragmented. (the quartz boat that uses with expand phosphorus) nitrogen flow used: 4L/MIN, presses empty flow: 1L/MIN.
The 9th step, cleans before nickel plating: mixed acid solution is nitric acid 9 by volume: hydrofluoric acid 9: glacial acetic acid 12: the ratio of sulfuric acid 4In soak after 20 seconds and wash by water 10 minutes, then in this mixed acid solution, soak 20 seconds, then clean 5-10min with pure water, then with breathing out the powder that rubsSolution ultrasonic cleaning twice, each time is 20 ± 0.1min, frequency 28khz has cleaned at every turn and has all cleaned with pure water afterwardsOnce, pure water scavenging period is 5-10min. After above-mentioned cleaning step, with the hot pure water continuation ultrasonic cleaning 20 of 90 DEG C± 1min and then normal temperature pure water rinsing 5-10min, then soak hydrofluoric acid 5 minutes, finally uses normal temperature pure water normal developing againOne time.
Complete after above-mentioned steps, carry out conventional a nickel plating, alloy and secondary nickel plating, chip is made complete.
Specifically, by the prepared chip of this technique, its fragmentation rate and traditional handicraft contrast situation are as follows:
。
Claims (1)
1. a method of diffusion for low fragmentation rate diode, is mainly made up of following steps: former Wafer Cleaning, row's phosphorus paper, expand phosphorus,Before burst, one side sandblast, painting boron, clean, be coated with boron, expansion boron, the front cleaning of nickel plating, a nickel plating, alloy, secondary nickel plating, its feature existsIn: before described nickel plating, matting is: after soaking 20 seconds in mixed acid solution, wash by water 10 minutes, then in mixed acid solution, soak 20 seconds, soClean 5-10min with pure water afterwards, then with breathing out the powder solution ultrasonic cleaning twice that rubs, each time is 20 ± 0.1min, at every turn clearWash and all clean once with pure water afterwards, pure water scavenging period is 5-10min;
After above-mentioned cleaning step, continue ultrasonic cleaning 20 ± 1min normal temperature pure water and then with 90 ± 10 DEG C of hot pure waterRinse 5-10min, then soak hydrofluoric acid 5 minutes, finally use again normal temperature pure water normal developing one time;
Described mixed acid solution volume proportion: nitric acid 9: hydrofluoric acid 9: glacial acetic acid 12: sulfuric acid 4.
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| CN201210412793.9A CN102983072B (en) | 2012-10-25 | 2012-10-25 | A kind of method of diffusion of low fragmentation rate diode |
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| CN201210412793.9A CN102983072B (en) | 2012-10-25 | 2012-10-25 | A kind of method of diffusion of low fragmentation rate diode |
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| CN102983072B true CN102983072B (en) | 2016-05-11 |
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| CN103117336A (en) * | 2013-03-28 | 2013-05-22 | 南通康比电子有限公司 | Method for silicon wafer even diffusion in diode chip manufacturing |
| CN104112651B (en) * | 2014-07-03 | 2018-08-14 | 扬州虹扬科技发展有限公司 | A kind of rectifier chip fabrication technique |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
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| US7473936B2 (en) * | 2005-01-11 | 2009-01-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
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Effective date of registration: 20211216 Address after: 226500 No. 8 Xingyuan Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Nantong Kangxin Semiconductor Technology Co.,Ltd. Address before: 226500 No. 8 Xingyuan Road, Rucheng Town Industrial Park, Rugao City, Nantong City, Jiangsu Province Patentee before: NANTONG HORNBY ELECTRONIC Co.,Ltd. |
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