CN102931100A - Formation method of semiconductor packaging structure - Google Patents
Formation method of semiconductor packaging structure Download PDFInfo
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- CN102931100A CN102931100A CN201210444526XA CN201210444526A CN102931100A CN 102931100 A CN102931100 A CN 102931100A CN 201210444526X A CN201210444526X A CN 201210444526XA CN 201210444526 A CN201210444526 A CN 201210444526A CN 102931100 A CN102931100 A CN 102931100A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Abstract
A formation method of a semiconductor packaging structure comprises a provided chip, wherein the surface of the chip is provided with a metal interconnection structure, an insulating layer exposing the metal interconnection structure is formed on the surface of the chip, a column-shaped electrode is formed on the surface of the metal interconnection structure, a diffusion barrier layer is formed on the side wall surface and top surface of the column-shaped electrode, a passivation layer is formed on the surface of the insulating layer, and the electrode covers the passivation layer. The passivation layer is grinded until the diffusion barrier layer is exposed. A welding ball is formed on the surface of the diffusion barrier layer. The welding ball is arranged on the exposed surface of the diffusion barrier layer and the diffusion barrier layer enables the column-shaped electrode to be separated from the welding ball, so tin-copper intermetallic compound (IMC) is not formed and the welding ball is not prone to being off the column-shaped electrode.
Description
Technical field
The present invention relates to semiconductor packaging, particularly a kind of formation method of semiconductor package of high reliability.
Background technology
In current semicon industry, Electronic Packaging has become an importance of industry development.Development through encapsulation technology decades, traditional peripheral cloth line style packaged type and BGA Package technology more and more can't satisfy current high density, undersized encapsulation requirement, wafer stage chip packaged type (Wafer-Level Chip Scale Packaging Technology, WLCSP) technology has become the packaged type of current hot topic.
Please refer to Fig. 1, cross-sectional view for a kind of encapsulating structure of existing wafer stage chip packaged type comprises: silicon chip 1 is positioned at the insulating barrier 2 on described silicon chip 1 surface, described insulating barrier 2 has opening, and silicon chip 1 surface that described opening exposes has pad 3; Be positioned at the again interconnection metal layer 4 on described pad 3, insulating barrier 2 surfaces, described again interconnection metal layer 4 is used for the position redistribution with the BGA Package solder joint; Be positioned at the copper post 5 on described again interconnection metal layer 4 surfaces, described copper post 5 is connected with pad 3 by interconnection metal layer 4 again; Cover the sealing material layer 6 that is formed by organic resin of described again interconnection metal layer 4, insulating barrier 2, and the top surface of described sealing material layer 6 flushes with the top surface of described copper post 5, be positioned at the soldered ball 7 of the top surface of described copper post 5.More encapsulating structure and formation techniques about the wafer stage chip packaged type please refer to the american documentation literature that publication number is US2001/0094841A1.
But soldered ball 7 comes off from the top surface of described copper post 5 easily in the above-mentioned encapsulating structure, thereby causes chip failure.
Summary of the invention
The problem that the present invention solves provides a kind of formation method of semiconductor package, can effectively improve the adhesion of soldered ball, improves the reliability of semiconductor package.
For addressing the above problem, technical solution of the present invention provides a kind of formation method of semiconductor package, comprising: chip is provided, and described chip surface has metal interconnect structure, forms the insulating barrier that exposes described metal interconnect structure at described chip surface; Form columnar electrode on the metal interconnect structure surface; Form diffusion impervious layer at described columnar electrode sidewall surfaces, top surface; Form passivation layer at described surface of insulating layer, described passivation layer covers described columnar electrode; Described passivation layer is ground, until expose described diffusion impervious layer; Form soldered ball on the described diffusion impervious layer surface that exposes.
Optionally, also comprise: after described diffusion impervious layer surface forms soakage layer, forms passivation layer, described passivation layer is ground, until expose described soakage layer, form soldered ball on the described soakage layer surface that exposes.
Optionally, the material of described soakage layer comprises a kind of in gold element, silver element, phosphide element and the tin element at least.
Optionally, described diffusion impervious layer is nickel dam.
Compared with prior art, the present invention has the following advantages:
The embodiment of the invention forms columnar electrode on described metal interconnect structure surface, forms diffusion impervious layer at described columnar electrode sidewall surfaces, top surface, forms soldered ball on the diffusion impervious layer surface at described columnar electrode top.Because described soldered ball is positioned at the described diffusion impervious layer surface that exposes, diffusion impervious layer can not form tin copper interface alloy cpd so that columnar electrode and soldered ball are isolated, and described soldered ball is not easy to come off from columnar electrode.
Further, form soakage layer on described diffusion impervious layer surface, the soldered ball of follow-up formation has better wettability on the soakage layer surface, improved the adhesion between soldered ball and the soakage layer, and described soakage layer is wrapped in sidewall and the top surface of described columnar electrode, so that external force is when stirring described soldered ball, described soldered ball is not easy from described soakage layer sur-face peeling.
Description of drawings
Fig. 1 is the cross-sectional view of the semiconductor package of prior art;
Fig. 2 is the schematic flow sheet of formation method of the semiconductor package of first embodiment of the invention;
Fig. 3 to Figure 13 is the cross-sectional view of forming process of the semiconductor package of first embodiment of the invention;
Figure 14 to Figure 25 is the cross-sectional view of forming process of the semiconductor package of second embodiment of the invention.
Embodiment
By in the background technology as can be known, soldered ball comes off from the top surface of copper post easily in the encapsulating structure of prior art, thereby can cause chip failure.
The inventor finds through research, the main cause that causes the problems referred to above is: because the material of described soldered ball mainly comprises tin, after described soldered ball is formed on described copper post surface, in the process of high temperature reflux, tin on contact-making surface can react with copper and form tin copper interface alloy cpd (Intermetallic Compound, IMC), raising along with tin copper interface alloy cpd thickness, tin atom near contact-making surface in the scolding tin can reduce gradually, relative so that lead atom in the soldered ball, the ratio of silver atoms increases, so that so that the flexibility of soldered ball increases, the set strength decreased, thereby so that whole soldered ball come off from the top surface of copper post easily; And when described tin can react when forming tin copper interface alloy cpd with copper, under initial conditions, described tin can react with copper and form η-phase(Eta phase) Cu
6Sn
5, described Cu
6Sn
5The weight percent content of middle copper is about 40%, but As time goes on, the copper atom in the copper post constantly is diffused in the alloy cpd of tin copper interface, forms ε-phase(Epsilon phase) Cu
3Sn, described Cu
3The weight percent content of copper rises to and is about 66% among the Sn, described ε-phase(Epsilon phase) Cu
3The surface energy of Sn is far smaller than η-phase(Eta phase) Cu
6Sn
5, contracting tin or Non-Dewetting occur in tin copper interface alloy cpd surface easily, thereby so that whole soldered ball come off from the top surface of copper post easily.
Therefore, the present invention proposes a kind of formation method of semiconductor package, form diffusion impervious layer at described columnar electrode sidewall surfaces, top surface, after described diffusion impervious layer surface forms passivation layer, described passivation layer is ground, until expose described diffusion impervious layer; Form soldered ball on the described diffusion impervious layer surface that exposes.Because described soldered ball is positioned at the described diffusion impervious layer surface that exposes, diffusion impervious layer can not form tin copper interface alloy cpd so that columnar electrode and soldered ball are isolated, and described soldered ball is not easy to come off from columnar electrode.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
The first embodiment
First embodiment of the invention at first provides a kind of formation method of semiconductor package, please refer to Fig. 2, and the schematic flow sheet for the formation method of described semiconductor package specifically comprises:
Step S101 provides chip, and described chip surface has pad, forms the insulating barrier that exposes described pad at described chip surface;
Step S102 forms the first passivation layer at described surface of insulating layer, described the first passivation layer cover part pad;
Step S103 forms plating seed layer at described pad and the first passivation layer surface, forms the second mask layer on described plating seed layer surface, forms the second opening that runs through described the second mask layer in described the second mask layer;
Step S104 utilizes electroplating technology to form columnar electrode in described the second opening;
Step S105 removes described the second mask layer;
Step S106, form the first mask layer on described plating seed layer surface, described the first mask layer has the first opening corresponding to the position of columnar electrode, and the size of described the first opening is greater than the size of described columnar electrode, and has the gap between described the first opening sidewalls and the columnar electrode sidewall;
Step S107, the plating seed layer surface that exposes at described columnar electrode sidewall surfaces, top surface, the first opening forms diffusion impervious layer;
Step S108 forms soakage layer on described diffusion impervious layer surface;
Step S109, the plating seed layer of removing described the first mask layer and exposing form passivation layer in described the first passivation layer surface, and described passivation layer covers described columnar electrode;
Step S110 grinds described passivation layer, until expose described diffusion impervious layer;
Step S111 forms soldered ball on the described diffusion impervious layer surface that exposes.
Concrete, please refer to Fig. 3 to Figure 13, be the cross-sectional view of the forming process of the semiconductor package of first embodiment of the invention.
Please refer to Fig. 3, chip 100 is provided, described chip 100 surfaces have pad 101, form the insulating barrier 110 that exposes described pad 101 on described chip 100 surfaces.
Described chip 100 is wherein a kind of of silicon base, germanium substrate, silicon-on-insulator substrate, be formed with semiconductor device (not shown) and metal interconnect structure (not shown) etc. in the described chip 100, described semiconductor device and described pad can be positioned at the surface, the same side of chip, also can be positioned at the different side surfaces of chip.Described semiconductor device is connected with pad electricity, when described semiconductor device is positioned at the different side surface of chip from described pad, utilizes the silicon through hole that runs through described chip that pad is connected with semiconductor device electricity.
In the present embodiment, the plating seed layer that is positioned at bond pad surface of described pad 101 and follow-up formation consists of metal interconnect structure.Follow-up columnar electrode is formed on the described pad 101.The material of described pad 101 is aluminium, copper, gold or silver-colored etc., and described semiconductor device utilizes columnar electrode, soldered ball of described pad 101 and follow-up formation etc. to be connected with external circuit.After forming described pad 101, form insulation material layer at described chip 100 and pad 101 surfaces, and described insulation material layer is carried out etching, expose described pad 101, form insulating barrier 110.Described insulating barrier 110 is silicon oxide layer, silicon nitride layer, polyimide resin layer, benzoxazine resin bed one or more layers stacked structure wherein.In the present embodiment, described insulating barrier 110 is silicon oxide layer.
Please refer to Fig. 4, form the first passivation layer 111, described the first passivation layer 111 cover part pads 101 on described insulating barrier 110 surfaces.
Because the pad of the chip of producing from chip manufacturing factory is often larger, so that the size of the columnar electrode that directly forms at described pad is also larger.Therefore can form again the first passivation layer 111 on described insulating barrier 110 surfaces, described the first passivation layer 111 cover part pads 101, so that the area reducing of the pad 101 that exposes so that the size of follow-up formation columnar electrode is dwindled, helps to form the high encapsulating structure of closeness.In other embodiments, also can not form described the first passivation layer 111, directly form plating seed layer at described insulating barrier and bond pad surface.The material of described the first passivation layer can be identical with the material of insulating barrier, also can be different.
Please refer to Fig. 5, form plating seed layer 120 at described pad 101 and the first passivation layer 111 surfaces, form the second mask layer 130 on described plating seed layer 120 surfaces, run through the second opening 135 of described the second mask layer in the 130 interior formation of described the second mask layer, described the second opening 135 exposes parcel plating Seed Layer 120.
The material of described plating seed layer 120 is the mixture of aluminium, copper, wherein one or more of gold, silver, and the technique that forms described plating seed layer 120 is sputtering technology or physical gas-phase deposition.In other embodiments, form projection bottom metal (UBM) layer at described pad and the first passivation layer surface, described projection bottom metal (UBM) layer is used for as plating seed layer.
When the material of described plating seed layer 120 is aluminium, the technique that forms described plating seed layer 120 is sputtering technology, when the material of described plating seed layer 120 is wherein a kind of of copper, gold, silver, the technique that forms described plating seed layer 120 is physical gas-phase deposition.In the present embodiment, the material of described plating seed layer 120 is copper.
The material of described the second mask layer 130 is photoresist, silica, silicon nitride, wherein one or more of amorphous carbon, and in the present embodiment, the material of described the second mask layer 130 is photoresist.Utilize photoetching process to run through the second opening 135 of described the second mask layer 130, described the second opening 135 follow-up columnar electrodes that are used to form in the 130 interior formation of described the second mask layer.The size of overlooking the visual angle of described the second opening 135 can greater than the size of described pad 101, also can be equal to or less than the size of described pad 101.
Please refer to Fig. 6, utilize electroplating technology at described the second opening 135(as shown in Figure 5) in form columnar electrode 140.
The material of described columnar electrode 140 is copper.The negative electrode of described plating seed layer 120 with the DC power supply of electroplating is connected, the copper anode of DC power supply is immersed in the aqueous solution of copper sulphate, then lead to direct current, plating seed layer 120 surfaces that expose at described the second opening 135 form the copper posts, become columnar electrode 140.The height of described columnar electrode 140 can be identical with the degree of depth of the second opening 135, also can be lower than the degree of depth of the second opening 135.
Please refer to Fig. 7, remove described the second mask layer 130(as shown in Figure 6).
In the present embodiment, the technique of removing described the second mask layer 130 is cineration technics.After removing described the second mask layer 130, expose described plating seed layer 120.In the present embodiment, be electroplating technology because subsequent technique forms the technique of diffusion impervious layer and soakage layer, keep plating seed layer 120 in this step.
In other embodiments, when the technique of follow-up formation diffusion impervious layer and soakage layer is chemical plating process, remove the parcel plating Seed Layer.The technique of removing described plating seed layer comprises: form the 4th mask layer (not shown) on described plating seed layer surface, described the 4th mask layer covers described columnar electrode, take described the 4th mask layer as mask, utilize wet-etching technology or dry etch process to remove the described plating seed layer that exposes, then remove described the 4th mask layer.
In other embodiments, remove described the second mask layer after, utilize dry etch process to return etching and remove the plating seed layer do not covered by columnar electrode.Because plating seed layer is often very thin, and columnar electrode is very thick, by control etch period and etching power, when removing described plating seed layer, can not affect greatly described columnar electrode.
Please refer to Fig. 8, form the first mask layer 150 on described plating seed layer 120 surfaces, described the first mask layer 150 has the first opening 155 corresponding to the position of columnar electrode 140, the size of described the first opening 155 is greater than the size of described columnar electrode 140, and has the gap between described the first opening 155 sidewalls and columnar electrode 140 sidewalls.
The material of described the first mask layer 150 is photoresist, silica, silicon nitride, wherein one or more of amorphous carbon, and in the present embodiment, described the first mask layer 150 is photoresist layer.Utilize photoetching process in described photoresist layer, to form the first opening 155.Owing to have the gap between the sidewall of described the first opening 155 and columnar electrode 140 sidewalls so that follow-up can be at sidewall and the top formation diffusion impervious layer of described columnar electrode.In the present embodiment, described the first opening 155 also exposes and is positioned at columnar electrode 140 belows plating seed layer 120 on every side, so that the section shape of the diffusion impervious layer of follow-up formation is " several " font.In other embodiments, described columnar electrode below does not expose plating seed layer, and described columnar electrode covers remaining plating seed layer surface fully, so that follow-uply can only form diffusion impervious layer at sidewall and the top of described columnar electrode.
Please refer to Fig. 9, plating seed layer 120 surfaces that expose at described columnar electrode 140 sidewall surfaces, top surface, the first opening 155 form diffusion impervious layer 160.
The react tin copper interface alloy cpd of formation ε-phase of the copper that described diffusion impervious layer 160 is used for stoping columnar electrode 140 and the tin in the soldered ball.In the present embodiment, described diffusion impervious layer 160 is nickel dam.Described nickel dam can stop the copper in the columnar electrode 140 be diffused in the soldered ball with soldered ball in tin react and form the tin copper interface alloy cpd of ε-phase, and described nickel dam can avoid the columnar electrode surface that oxidation occurs, and affects conducting resistance.Because diffusion impervious layer is between described columnar electrode and soldered ball, so that described columnar electrode and soldered ball are isolated, form soldered ball when follow-up on described diffusion impervious layer surface, can not form tin copper interface alloy cpd on the interface, described soldered ball is not easy to come off from the columnar electrode top surface.In the present embodiment, the technique that forms described diffusion impervious layer 160 is chemical plating process.In other embodiments, the technique that forms described diffusion impervious layer also can be electroplating technology, and the electroplate liquid of electroless nickel layer comprises every liter of nickel sulfamic acid 700 ~ 800 gram, every liter of nickel chloride 6 ~ 8 gram, every liter of boric acid 35 ~ 45 gram, pH value is 4 ~ 6, the temperature of plating bath is 45 ~ 55 degrees centigrade.
Because chemical plating and plating are to form coating in the metal surface, in the present embodiment, described nickel dam is at described columnar electrode 140 sidewalls and top surface, plating seed layer 120 surfaces that the first opening 155 exposes form, so that the section shape of described diffusion impervious layer 160 is " several " font, being parallel to bottom pad 101 surface and being connected with plating seed layer 120 of described diffusion impervious layer 160, so that the section shape of the soakage layer of follow-up formation also is " several " font, when external force with described soldered ball upwards or about when stirring, the partial wetting layer of " L " shape of close columnar electrode bottom can suppress soldered ball and move up, and also can improve adhesion between soldered ball and the columnar electrode in the soakage layer of columnar electrode sidewall part, suppress soldered ball up and down or double swerve, so that soldered ball is not easy to come off, improved the reliability of encapsulating structure.And because the section shape of diffusion impervious layer 160 is " several " font, being parallel to bottom pad 101 surface and being connected with plating seed layer 120 of described diffusion impervious layer 160, the upper end of described diffusion impervious layer 160 covers described columnar electrode 140 sidewalls and top surface, utilize described diffusion impervious layer 160 can improve adhesion between columnar electrode 140 and the plating seed layer 120, so that described columnar electrode 140 is not easy from plating seed layer 120 sur-face peelings.
In other embodiments, when in technique before, plating seed layer around the described columnar electrode is removed, described diffusion impervious layer only forms at described columnar electrode sidewall and top surface, so that the section shape of described diffusion impervious layer is " ㄇ " font, so that the section shape of the soakage layer of follow-up formation also is " ㄇ " font.When external force with described soldered ball upwards or about when stirring, can improve adhesion between soldered ball and the columnar electrode in the soakage layer of columnar electrode sidewall part, suppress about the soldered ball, double swerve so that soldered ball is not easy to come off, improved the reliability of encapsulating structure.
Please refer to Figure 10, form soakage layer 170 on described diffusion impervious layer 160 surfaces.
In the present embodiment, described soakage layer 170 comprises wherein a kind of of gold element, silver element, phosphide element or tin element at least, such as gold layer, silver layer, tin layer, sn-ag alloy layer, tin-indium alloy layer etc., the technique that forms described soakage layer 170 is chemical plating process or electroplating technology.
Because nickel also is easier to react with airborne oxygen, and the soakage layer 170 with gold element, silver element, phosphide element or tin element is not easy to react with airborne oxygen, form described soakage layer on described nickel dam surface, can avoid forming oxide layer on the nickel dam surface, and scolding tin has better wettability on soakage layer 170 surfaces with gold element, silver element, phosphide element or tin element, so that the soldered ball that follow-up backflow forms afterwards and columnar electrode have stronger adhesion, described soldered ball is not easy to peel off.
Gold, silver have lower resistance, described soakage layer in subsequent technique can to a certain degree with soldered ball, the counterdiffusion of diffusion impervious layer phase, form alloy-layer, the described alloy-layer that contains gold, silver can effectively reduce the interconnection resistance of encapsulating structure.
In the present embodiment, described soakage layer 170 is for electroplating the tin layer that forms, and the electroplate liquid of electrotinning layer comprises every liter of sodium stannate 40 ~ 60 gram, every liter of NaOH 10 ~ 16 gram, and every liter of sodium acetate 20 ~ 30 gram, bath temperature is 70 ~ 85 degrees centigrade.
Because main component is tin in the soldered ball, the composition of soldered ball and described tin layer is roughly the same, and the fusing point of scolding tin and tin layer is lower, in follow-up reflux technique, mutually diffusion after being positioned at soldered ball on the columnar electrode and described tin layer and dissolving, form an integral body, the mechanical strength between soldered ball and the described tin layer can be very large, improved the reliability of soldered ball.And when the thickness of described tin layer was larger, the mechanical strength between soldered ball and the described tin layer was larger, can effectively improve the reliability of soldered ball.
In other embodiments, also can not form described soakage layer, after forming diffusion impervious layer, remove described the first mask layer.
Please refer to Figure 11, remove described the first mask layer 150(and please refer to Figure 10) and the plating seed layer 120(that exposes please refer to Figure 10), form passivation layers 180 on described the first passivation layer 111 surface, described passivation layer 180 covers described columnar electrode 140.
In the present embodiment, the technique of removing described the first mask layer 150 is cineration technics.
In the present embodiment, the technique of removing the described plating seed layer that exposes 120 is: form the 5th mask layer (not shown) at described columnar electrode, described the 5th mask layer covers described columnar electrode, expose columnar electrode plating seed layer 120 on every side, take described the 5th mask layer as mask, utilize wet-etching technology or dry etch process to remove the described plating seed layer that exposes, then remove described the 5th mask layer.
In other embodiments, the technique of removing the described plating seed layer that exposes is: after removing described the first mask layer, utilize dry etch process to return etching and remove the plating seed layer that is not covered by columnar electrode.Because plating seed layer is often very thin, and the diffusion impervious layer on the columnar electrode or soakage layer are thicker, by control etch period and etching power, when removing described plating seed layer, can not affect greatly described diffusion impervious layer or soakage layer.
The material of described passivation layer 180 is silicon oxide layer, silicon nitride, silicon oxynitride layer, polyimides, epoxy resin, phenolic resins, wherein one or more of benzoxazine resin.In the present embodiment, the material of described passivation layer 180 is epoxy resin, utilize spin coating, printing coating technique, resin transfer moulding (RTM) technique, resin molding infiltration (RFI) technique etc. that epoxide resin material is covered soakage layer 170 surfaces on described the first passivation layer 111, the columnar electrode 140, the thickness of described passivation layer 180 is greater than the gross thickness of columnar electrode 140 with diffusion impervious layer 160, soakage layer 170.
Please refer to Figure 12, described passivation layer 180 is ground, until expose described soakage layer 170.
Described grinding technics is mechanical lapping or cmp.
In the present embodiment, described passivation layer 180 is ground, until expose soakage layer 170 on described columnar electrode 140 top surfaces, and the soakage layer 170 on described columnar electrode 140 top surfaces is not polished fully, so that in the follow-up reflux course, between the soakage layer 170 on the soldered ball on the described columnar electrode 140 and columnar electrode 140 top surfaces, has good wettability, so that the adhesion between soldered ball and the soakage layer 170 and mechanical strength are high, the reliability of encapsulating structure is high; And described grinding technics is so that the having an even surface of passivation layer 180, and the soldered ball of follow-up formation is positioned at the same level height, is conducive to improve the reliability of encapsulating structure, and be conducive to other encapsulating structures for example pcb board encapsulate; And because the soakage layer 170 on described columnar electrode 140 top surfaces is not polished fully, the diffusion impervious layer 160 that is positioned on columnar electrode 140 top surfaces is unaffected, thereby can prevent that the tin in copper and the soldered ball in the columnar electrode from forming ε-phase(Epsilon phase) tin copper interface alloy cpd, affect the adhesion between soldered ball and the columnar electrode.
In other embodiments, described passivation layer is ground, until expose the diffusion impervious layer that is positioned at described columnar electrode surface, follow-up at described diffusion impervious layer surface formation soldered ball, can prevent that the tin in copper and the soldered ball in the columnar electrode from forming ε-phase(Epsilon phase) tin copper interface alloy cpd, the reliability of the final soldered ball that forms also is higher than prior art directly forms soldered ball on the copper post surface that exposes reliability.
Please refer to Figure 13, form soldered ball 190 on the described soakage layer that exposes 170 surfaces.
The technique that forms described soldered ball 190 comprises that scolder forms technique and two steps of reflux technique, form scolder on the described soakage layer that exposes 170 surfaces first, the recycling reflux technique refluxes described scolder, and the scolder on the described soakage layer that exposes 170 surfaces forms soldered ball 190.Wherein, described scolder is tin, tin lead mixture or other ashbury metal etc., scolder forms technique and comprises that screen painting tin cream, spot welding form the tin ball, chemical plating forms the tin layer, electroplates formation tin layer etc., and reflow soldering process comprises ultrasonic wave reflow soldering process, hot air type reflow soldering process, infrared ray reflow soldering process, laser reflow soldering process, gas phase reflow soldering process etc.The known technology that described scolder formation technique and two steps of reflow soldering process are those skilled in the art, therefore not to repeat here.
In the present embodiment, because described soakage layer 170(tin layer) and the fusing point of scolder all lower, less than 250 degrees centigrade, in reflux course, mutually diffusion after described soakage layer 170 and scolder melt, so that described soakage layer 170 and the final soldered ball that forms combine, mechanical strength between the two increases greatly.In the present embodiment, because the section shape of described soakage layer 170 is " several " font, when external force with described soldered ball upwards or about when stirring, being positioned at the columnar electrode bottom can move up by the inhibition soldered ball with the parallel plane soakage layer 170 of chip, and also can improve adhesion between soldered ball and the columnar electrode in soakage layer 170 parts of columnar electrode sidewall, suppress soldered ball up and down or double swerve, so that soldered ball is not easy to come off, improved the reliability of encapsulating structure.
In other embodiments, when the section shape of described diffusion impervious layer is " ㄇ " font, the section shape of soakage layer also is " ㄇ " font.When external force with described soldered ball upwards or about when stirring, can improve adhesion between soldered ball and the columnar electrode in the soakage layer of columnar electrode sidewall part, suppress about the soldered ball, double swerve so that soldered ball is not easy to come off, improved the reliability of encapsulating structure.
According to above-mentioned formation method, the embodiment of the invention also provides a kind of semiconductor package, please refer to Figure 13, specifically comprise: chip 100, described chip 100 surfaces have pad 101, be positioned at described chip 100 surfaces and expose the insulating barrier 110 of described pad 101, be positioned at the first passivation layer 111 of described insulating barrier 110 surfaces and cover part pad 101; Be positioned at the plating seed layer 120 on described pad 101 and part the first passivation layer 111 surfaces; Be positioned at the columnar electrode 140 on described plating seed layer 120 surfaces, described columnar electrode 140 bottom peripheries expose parcel plating Seed Layer 120; Be positioned at the diffusion impervious layer 160 of described columnar electrode 140 sidewall surfaces, top surface, columnar electrode 140 bottom peripheries; Be positioned at the soakage layer 170 on described diffusion impervious layer 160 surfaces; Be positioned at the passivation layer 180 of the soakage layer 170 of described the first passivation layer 111 surfaces and covering columnar electrode 140 sidewalls, soakage layer 170 flush at described passivation layer 180 surfaces and columnar electrode 140 tops; Be positioned at the soldered ball 190 on soakage layer 170 surfaces at described columnar electrode 140 tops.
The second embodiment
Second embodiment of the invention provides the formation method of another kind of semiconductor package, and is concrete, please refer to Figure 14 to Figure 25, is the cross-sectional view of the forming process of the semiconductor package of second embodiment of the invention.
Please refer to Figure 14, chip 200 is provided, described chip 200 surfaces have pad 201, form the insulating barrier 210 that exposes described pad 201 on described chip 200 surfaces.The plating seed layer that is positioned at bond pad surface of described pad 201, follow-up formation and the again interconnection metal layer that is positioned at described plating seed layer surface consist of metal interconnect structure.
Please refer to Figure 15, form plating seed layer 220 at described pad 201 and insulating barrier 210 surfaces, form the 3rd mask layer 225 on described plating seed layer 220 surfaces, run through the groove 226 of described the 3rd mask layer 225 in the 225 interior formation of described the 3rd mask layer.
The material of described the 3rd mask layer 225 is photoresist, silica, silicon nitride, wherein one or more of amorphous carbon, and in the present embodiment, the material of described the 3rd mask layer 225 is photoresist.Utilize photoetching process to run through the groove 226 of described the 3rd mask layer 225, the described groove 226 follow-up again interconnection metal layers that are used to form in the 225 interior formation of described the 3rd mask layer.One end of described groove 226 is positioned on the described pad 201, and the other end of described groove 226 is positioned on the insulating barrier 210.
Please refer to Figure 16, utilize electroplating technology at described groove 226(as shown in figure 15) in form again interconnection metal layer 227.
Described again interconnection metal layer 227 is single layer structure or multiple-level stack structure, and in the present embodiment, described again interconnection metal layer 227 is the single-layer metal structure.The material of described again interconnection metal layer 227 is copper.Concrete electroplating technology please refer to the first embodiment.In other embodiments, also can adopt first sputtering technology or physical gas-phase deposition to form aluminum metal layer, copper metal layer or aluminum bronze metal level etc. on described plating seed layer surface, then utilize dry etch process that described aluminum metal layer, copper metal layer or aluminum bronze metal level etc. are carried out etching, form again interconnection metal layer.
Described again interconnection metal layer 227 1 ends are positioned at plating seed layer 220 surfaces on the described pad 201, the other end is positioned at plating seed layer 220 surfaces on the insulating barrier 210, and the columnar electrode of follow-up formation is formed on again interconnection metal layer 227 surfaces on the described insulating barrier 210.Because in order to improve package quality, the spacing of the final encapsulation solder joint (being soldered ball) that forms, position need rationally to arrange, the position of encapsulation solder joint often rule is fixing, and the limited location of the pad of semiconductor chip connects up in internal circuit, it is different from arranging of desirable encapsulation solder joint often to arrange in the position of pad, therefore need to utilize again interconnection metal layer with pad with encapsulate solder joint electricity and be connected.
Please refer to Figure 17, remove described the 3rd mask layer 225(as shown in figure 16), described plating seed layer 220 and again interconnection metal layer 227 surface form the second mask layers 230, the second opening 235 that runs through described the second mask layer 230 in the 230 interior formation of described the second mask layer, described the second opening 235 exposes the again surface of interconnection metal layer 227 of part, and the size of overlooking the visual angle of described the second opening 235 is less than the size of the again interconnection metal layer 227 of correspondence position so that the again interconnection metal layer 227 that exposes around also have again interconnection metal layer 227 of part.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 18, utilize electroplating technology at described the second opening 235(as shown in figure 17) in form columnar electrode 240.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 19, remove described the second mask layer 230(as shown in figure 18) and Some Species sublayer 220, again interconnection metal layer 227 of part exposed around the described columnar electrode 240.After removing described the second mask layer 230, expose Seed Layer 220 and interconnection metal layer 227 again, in described Seed Layer 220, interconnection metal layer 227 surface forms the 4th mask layers (not shown) again, described the 4th mask layer covers described columnar electrode 140, interconnection metal layer 227 again, take described the 4th mask layer as mask, utilize wet-etching technology or dry etch process to remove the described Some Species sublayer 220 that exposes, until expose described insulating barrier 210, then remove described the 4th mask layer.
Please refer to Figure 20, described insulating barrier 210 and again interconnection metal layer 227 surface form the first mask layers 250, described the first mask layer 250 has the first opening 255 corresponding to the position of columnar electrode 240, the size of described the first opening 255 is greater than the size of described columnar electrode 240, and has the gap between described the first opening 255 sidewalls and columnar electrode 240 sidewalls.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 21, the part that exposes at described columnar electrode 240 sidewall surfaces, top surface, the first opening 255 forms diffusion impervious layer 260 in interconnection metal layer 227 surfaces again.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 22, form soakage layer 270 on described diffusion impervious layer 260 surfaces.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 23, remove described the first mask layer 250(and please refer to Figure 22), at described insulating barrier 210, interconnection metal layer 227 surface forms passivation layers 280 again, described passivation layer 280 covers described columnar electrode 240.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 24, described passivation layer 280 is ground, until expose described soakage layer 270.The concrete technique that forms please refer to the first embodiment.
Please refer to Figure 25, form soldered ball 290 on the described soakage layer that exposes 270 surfaces.The concrete technique that forms please refer to the first embodiment.
According to above-mentioned formation method, second embodiment of the invention also provides a kind of semiconductor package, please refer to Figure 25, specifically comprises: chip 200, described chip 200 surfaces have pad 201, are positioned at described chip 200 surfaces and expose the insulating barrier 210 of described pad 201; Be positioned at the plating seed layer 220 on described insulating barrier 210 and pad 201 surfaces, be positioned at the again interconnection metal layer 227 on plating seed layer 220 surfaces on described pad 201 and the insulating barrier 210, described pad 201 and again interconnection metal layer 227 consist of metal interconnect structures; Be positioned at the columnar electrode 240 on described again interconnection metal layer 227 surfaces, described columnar electrode 240 bottom peripheries expose again interconnection metal layer 227 of part; Be positioned at the diffusion impervious layer 260 on again interconnection metal layer 227 surfaces that expose around described columnar electrode 240 sidewall surfaces, top surface, the columnar electrode 240; Be positioned at the soakage layer 270 on described diffusion impervious layer 260 surfaces; Be positioned at the passivation layer 280 of the soakage layer 270 of described insulating barrier 210 surfaces and covering columnar electrode 240 sidewalls, soakage layer 270 flush at described passivation layer 280 surfaces and described columnar electrode top; Be positioned at the soldered ball 290 on described soakage layer 270 surfaces.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (13)
1. the formation method of a semiconductor package is characterized in that, comprising:
Chip is provided, and described chip surface has metal interconnect structure, forms the insulating barrier that exposes described metal interconnect structure at described chip surface;
Form columnar electrode on the metal interconnect structure surface;
Form diffusion impervious layer at described columnar electrode sidewall surfaces, top surface;
Form passivation layer at described surface of insulating layer, described passivation layer covers described columnar electrode;
Described passivation layer is ground, until expose described diffusion impervious layer;
Form soldered ball on the described diffusion impervious layer surface that exposes.
2. the formation method of semiconductor package as claimed in claim 1 is characterized in that, also comprises:
After described diffusion impervious layer surface forms soakage layer, forms passivation layer, described passivation layer is ground, until expose described soakage layer, form soldered ball on the described soakage layer surface that exposes.
3. the formation method of semiconductor package as claimed in claim 2 is characterized in that, the material of described soakage layer comprises a kind of in gold element, silver element, phosphide element and the tin element at least.
4. the formation method of semiconductor package as claimed in claim 1 is characterized in that, described diffusion impervious layer is nickel dam.
5. the formation method of semiconductor package as claimed in claim 1, it is characterized in that, the technique that forms described diffusion impervious layer comprises: form the first mask layer at described surface of insulating layer, described the first mask layer has the first opening corresponding to the position of columnar electrode, the size of described the first opening is greater than the size of described columnar electrode, and has the gap between described the first opening sidewalls and the columnar electrode sidewall; Utilize chemical plating process or electroplating technology to form diffusion impervious layer at described columnar electrode sidewall surfaces, top surface.
6. the formation method of semiconductor package as claimed in claim 2 is characterized in that, the technique that forms described soakage layer comprises: utilize chemical plating process or electroplating technology to form soakage layer on described diffusion impervious layer surface.
7. the formation method of semiconductor package as claimed in claim 1 or 2, it is characterized in that, described diffusion impervious layer is formed on the metal interconnect structure surface of described columnar electrode sidewall surfaces, top surface, the exposure of columnar electrode bottom periphery, so that the section shape of described diffusion impervious layer is " several " font.
8. the formation method of semiconductor package as claimed in claim 7 is characterized in that, the section shape that is positioned at the soakage layer on described diffusion impervious layer surface is " several " font.
9. the formation method of semiconductor package as claimed in claim 1 is characterized in that, described metal interconnect structure is pad, forms columnar electrode at described pad.
10. the formation method of semiconductor package as claimed in claim 9, it is characterized in that, the concrete technology that forms described columnar electrode comprises: form plating seed layer at described insulating barrier and bond pad surface, form the second mask layer on described plating seed layer surface, form the second opening that runs through described the second mask layer in described the second mask layer, described the second opening exposes the surface of part pad; Utilize electroplating technology in described the second opening, to form columnar electrode; Remove described the second mask layer and parcel plating Seed Layer.
11. the formation method of semiconductor package as claimed in claim 1 is characterized in that, described metal interconnect structure comprises pad and the again interconnection metal layer that is connected with described pad electricity, forms columnar electrode at described again interconnection metal layer.
12. the formation method of semiconductor package as claimed in claim 11, it is characterized in that, the concrete technology that forms described columnar electrode comprises: form plating seed layer at described insulating barrier and bond pad surface, form again interconnection metal layer on described plating seed layer surface; Form the second mask layer at described again interconnection metal layer and surface of insulating layer, form the second opening that runs through described the second mask layer in described the second mask layer, described the second opening exposes again interconnection metal layer of described part; In described the second opening, form columnar electrode; Remove described the second mask layer and parcel plating Seed Layer.
13. the formation method of semiconductor package as claimed in claim 12, it is characterized in that, the concrete technology that forms described again interconnection metal layer comprises: form the 3rd mask layer on described plating seed layer surface, in described the 3rd mask layer, form the groove that runs through described the 3rd mask layer, utilize electroplating technology to form again interconnection metal layer on the plating seed layer surface that described groove exposes, then remove described the 3rd mask layer.
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| CN110536564A (en) * | 2019-08-30 | 2019-12-03 | 宁波华远电子科技有限公司 | A kind of production method of the circuit board of boss as pad |
| CN111627880A (en) * | 2020-06-04 | 2020-09-04 | 厦门通富微电子有限公司 | Semiconductor bump, manufacturing method thereof and packaging structure |
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| CN102931100B (en) | 2016-04-20 |
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Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |