CN102929794B - The storage means of a kind of EEPROM - Google Patents
The storage means of a kind of EEPROM Download PDFInfo
- Publication number
- CN102929794B CN102929794B CN201210364425.1A CN201210364425A CN102929794B CN 102929794 B CN102929794 B CN 102929794B CN 201210364425 A CN201210364425 A CN 201210364425A CN 102929794 B CN102929794 B CN 102929794B
- Authority
- CN
- China
- Prior art keywords
- data
- packet
- block
- write
- eeprom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The present invention relates to the storage means of a kind of EEPROM, described EEPROM is divided into valid data memory block and bad block data memory block; Described bad block data memory block is for storing bad block data, and described bad block data is for storing the bad block message in EEPROM; Described valid data comprise factory's tune-up data, manual operation data and wireless receiving data; In units of data block, become seldom to upgrade district, at a slow speed more new district and fast more new district by effective Division; Intercept valid data, and form packet according to the type of valid data; To write in EEPROM in corresponding data storage area using there being the packet of renewal as packet to be updated, wherein the packet of factory's tune-up data adopts static store mode to write, and the packet of manual operation data and wireless receiving data adopts dynamic memory mode to write.Invention increases the utilization factor of EEPROM, extend the address-time of shortening access in the serviceable life EEPROM of EEPROM and improve the accuracy of write.
Description
Technical field
The present invention relates to the technical field that data store, be specifically related to the storage means of a kind of EEPROM.
Background technology
Current EEPROM generally uses static store mode to store data, and static store mode is that the data received are divided into according to relevance the packet that several sizes are not more than data block capacity in EEPROM, is write respectively in the data block of EEPROM by packet.When receiving new packet, new data packets be written in the data block that corresponding old packet stores, namely new data packets covers the old packet of its correspondence.The same address of each so more new data packets its correspondence all erasable, the erasable frequency of data block that the fast packet of renewal frequency is corresponding is also fast, and the erasable number of times of data block is limited, the erasable number of times ultimate value of current data block is 1,000,000 times, after erasable number of times reaches the limit values, this data block is cancelled, thus therefore corresponding EEPROM also cancels.As can be seen here, the static store mode of EEPROM makes the utilization factor of data block low, and serviceable life is short.In addition, at one time, the packet in EEPROM only stores portion, and be unfavorable for that data are preserved, security is low.Such as, the damage of some block in EEPROM, loses forever by causing corresponding data.
Summary of the invention
The object of the invention is the deficiency that utilization factor is low and serviceable life is short and the defect that overcome prior art static store mode data block, the storage means of a kind of EEPROM is provided, improve the utilization factor of data block in EEPROM, extend the serviceable life of EEPROM.
The object of the invention is to be achieved through the following technical solutions: the storage means of a kind of EEPROM, described EEPROM is divided into valid data memory block and bad block data memory block, described valid data memory block is for storing valid data, described bad block data memory block is for storing bad block data, and described bad block data is for storing the bad block message in EEPROM; Described valid data comprise factory's tune-up data, manual operation data and wireless receiving data, accordingly, valid data memory block is divided into the few more new district for depositing factory's tune-up data in units of data block, for depositing more new district and the more new district fast for depositing wireless receiving data at a slow speed of manual operation data;
Described EEPROM powers on when running and comprises the following steps:
Steps A, within the time period preset, intercept valid data, each class valid data forms the packet that one or more sizes corresponding are not more than data block capacity respectively;
Step B, will the packet of renewal be had to write in EEPROM in corresponding data storage area as packet to be updated, if packet to be updated is the packet of factory's tune-up data, write few more new district in static store mode, if packet to be updated is the packet of artificial service data, write at a slow speed more new district in dynamic memory mode, if packet to be updated is the packet of wireless receiving data, write fast more new district in dynamic memory mode.
Preferably, according to packet number, in packet the importance of data and the speed of packet renewal frequency divide data block in corresponding data memory block number.The data block that described data handbag number is more, corresponding data is more important, the faster corresponding data storage area of renewal frequency distributes is more, on the contrary data handbag number less, corresponding data data block that is more inessential, renewal frequency slower corresponding data storage area distribution is fewer.
Preferably, the storage means of described EEPROM, is also included in the information passing through to read EEPROM before intercepting valid data, sets up the step of concordance list in RAM.
Preferably, described concordance list comprises the array of the array of the identifier composition of each packet in EEPROM and the timestamp composition of each packet.
Preferably, the storage means of described EEPROM, also comprises the bad block detecting step after setting up concordance list.
Preferably, the step of described bad block detection is specific as follows:
The address of a01, acquisition data to be tested block;
A02, be the data of " 1 " entirely obtaining write in data block corresponding to address;
The data of a03, read step a02 write;
Whether the data that the data of a04, determining step a03 reading and step a02 write are completely the same; If both are completely the same, then perform step a05, otherwise perform a08;
A05, in mark bad block corresponding to address that step a01 obtains write be the data of " 0 " entirely;
The data of a06, read step a05 write;
Whether the data that the data of a07, determining step a06 reading and step a05 write are completely the same; If both are not quite identical, then perform step a08, otherwise perform a09;
A08, judge that this data block is as bad block, upgrade bad block data, and perform step a10;
A09, decision data block are health data block, discharge corresponding bad block mark, and perform step a10;
A10, judge whether to need to detect data block, if there is data block to be detected, perform step a11, otherwise perform step a12;
A11, obtain next data to be tested block address, and perform step a02;
A12, renewal concordance list.
Preferably, writing address is obtained by the concordance list in inquiry RAM in described step B.
Preferably, the dynamic memory mode in described step B is specific as follows:
B01, judge the whether free block in data storage area that packet to be written is corresponding, if free block, perform step b02, otherwise perform step b03;
B02, obtain the minimum empty block address in address as writing address;
B03, obtain the total amount of block in packet respective data storage district to be written;
B04, obtain the total amount of type of data packet in packet respective data storage district to be written;
B05, obtain the total amount of bad block in packet respective data storage district to be written;
B06, the integral part of taking the mean as on average backing up number, the total amount of described average=(total amount of the total amount-bad block of block)/type of data packet;
The backup number of b07, all types of packet in acquisition corresponding data memory block;
Whether b08, inquiry have the backup number of packet to be greater than on average to back up number, if the backup number of packet is all not more than and on average backs up number in respective data storage district, then perform step b09, otherwise perform b10;
B09, obtain address that packet to be written backs up the earliest itself as writing address;
B10, obtain backup number be greater than average backup number and the minimum packet in the address address of backing up the earliest as writing address;
B11, the writing address that packet write above-mentioned steps to be written is obtained.
Preferably, after also comprising write packet, the checking procedure whether checking data bag successfully writes.
Preferably, described checking procedure comprises:
Before c01, reading new write packet and write, packet compares;
Whether c02, judgement new write packet be completely the same with the front packet of write, if completely the same, performs step c03, otherwise perform c04;
C03, packet write successfully;
C04, judge that whether inconsistent number of times is more than three times, if inconsistent number of times is more than three times, then perform step c06, otherwise perform step c05;
C05, re-write packet, and perform c01;
C06, mark bad block in the buffer;
C07, judge whether packet writes in static store mode, is perform step c08, otherwise perform step c09;
C08, stopping write, and perform step c10;
C09, again acquisition writing address write packet to be written, and perform step c10;
C10, perform bad block detect.
The present invention has the following advantages and beneficial effect compared to existing technology:
1, the storage means of a kind of EEPROM of the present invention is by being divided into few more new district, at a slow speed more new district, fast more new district and bad block data memory block by EEPROM, and combined with static store mode by dynamic memory mode, add the utilization factor of EEPROM, extend the serviceable life of EEPROM and shorten the address-time of access EEPROM.
2, dynamic memory mode of the present invention makes packet repeatedly back up, and adds the security that data store.
3, the present invention by setting up concordance list in RAM, and convenient write and addressing when reading, do not need to access EEPROM; Reduce the number of times of access EEPROM, improve access efficiency.
4, the present invention's certification mark bad block after setting up concordance list, the whole block of release error flag, reduces the waste of EEPROM storage space.
5, the present invention is indicated bad block by bad block data, thus masks defect block addresses in read-write addressing algorithm, reduces address-time, thus shortens the access time.
6, the present invention verifies after writing the data packet, and improves the accuracy of write, prevents from accidentally writing failure or writes the data packet bad block and by loss of data.
Accompanying drawing explanation
Fig. 1 is that EEPROM storage area of the present invention divides schematic diagram;
Fig. 2 is the storage means embodiment process flow diagram of a kind of EEPROM of the present invention;
Fig. 3 is bad block overhaul flow chart;
Fig. 4 is dynamic memory mode process flow diagram;
Fig. 5 is the process flow diagram whether checking data bag successfully writes.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
As shown in Figure 1, the storage means of a kind of EEPROM, described EEPROM is divided into valid data memory block and bad block data memory block, described valid data memory block is for storing valid data, described bad block data memory block is for storing bad block data, and described bad block data is for storing the bad block message in EEPROM; Described valid data comprise factory's tune-up data, manual operation data and wireless receiving data, accordingly, valid data memory block is divided into the few more new district for depositing factory's tune-up data in units of data block, for depositing more new district and the more new district fast for depositing wireless receiving data at a slow speed of manual operation data;
Described EEPROM powers on when running and comprises the following steps:
Steps A, within the time period preset, intercept valid data, each class valid data forms the packet that one or more sizes corresponding are not more than data block capacity respectively;
Step B, will the packet of renewal be had to write in EEPROM in corresponding data storage area as packet to be updated, if packet to be updated is the packet of factory's tune-up data, write few more new district in static store mode, if packet to be updated is the packet of artificial service data, write at a slow speed more new district in dynamic memory mode, if packet to be updated is the packet of wireless receiving data, write fast more new district in dynamic memory mode.
When distributing data storage area in described step C according to packet number, in packet the importance of data and the speed of packet renewal frequency divide data block in corresponding data memory block number.The data block that described data handbag number is more, corresponding data is more important, the faster corresponding data storage area of renewal frequency distributes is more, on the contrary data handbag number less, corresponding data data block that is more inessential, renewal frequency slower corresponding data storage area distribution is fewer.The data storage area utilization factor of EEPROM maximized with this, serviceable life is the longest.
In addition, by the division to EEPROM data space, shorten the time of access EEPROM, add access efficiency; Dynamic memory and static store mode combine, and ensure that the efficiency utilization of the data storage area of EEPROM, also ensure that the efficiency of access EEPROM; Data repeatedly back up by dynamic memory mode, add the storage security of data.
As shown in Figure 2, the storage means implementation process of EEPROM is as follows in the present embodiment:
S101, by reading the information of EEPROM, concordance list is set up in RAM, described concordance list comprises the array of the array of the identifier composition of each packet in EEPROM and the timestamp composition of each packet, writing address can be obtained by the concordance list in access RAM in storing process, decrease the access times to EEPROM in storing process, add storage speed.
S102, detect bad block, by detecting the release of bad block step because of unexpected power down, then when re-powering operation, be judged as the health data block of bad block, decrease the waste of EEPROM storage space.
As shown in Figure 3, described detection bad block step is specific as follows:
The address of a01, acquisition data to be tested block;
A02, be the data of " 1 " entirely obtaining write in data block corresponding to address;
The data of a03, read step a02 write;
Whether the data that the data of a04, determining step a03 reading and step a02 write are completely the same; If both are completely the same, then perform step a05, otherwise perform a08;
A05, in mark bad block corresponding to address that step a01 obtains write be the data of " 0 " entirely;
The data of a06, read step a05 write;
Whether the data that the data of a07, determining step a06 reading and step a05 write are completely the same; If both are not quite identical, then perform step a08, otherwise perform a09;
A08, judge that this data block is as bad block, upgrade bad block data, and perform step a10;
A09, decision data block are whole block, discharge corresponding bad block mark, and perform step a10;
A10, judge whether to need to detect data block, if there is data block to be detected, perform step a11, otherwise perform step a12;
A11, obtain next data to be tested block address, and perform step a02;
A12, renewal concordance list.
S103, within the time period preset, intercept valid data, each class valid data forms the packet that one or more sizes corresponding are not more than data block capacity respectively.
S104, will the packet of renewal be had to write in EEPROM in corresponding data storage area as packet to be updated, if packet to be updated is the packet of factory's tune-up data, write into few more new district in static store mode, if packet to be updated is the packet of artificial service data, write at a slow speed more new district in dynamic memory mode, if packet to be updated is the packet of wireless receiving data, write into fast more new district in dynamic memory mode.
Writing address is obtained in particular by the concordance list in inquiry RAM.
As shown in Figure 4, wherein dynamic memory mode is specific as follows:
B01, judge the whether free block in data storage area that packet to be written is corresponding, if free block, perform step b02, otherwise perform step b03;
B02, obtain the minimum empty block address in address as writing address;
B03, obtain the total amount of block in packet respective data storage district to be written;
B04, obtain the total amount of type of data packet in packet respective data storage district to be written;
B05, obtain the total amount of bad block in packet respective data storage district to be written;
B06, the integral part of taking the mean as on average backing up number, the total amount of described average=(total amount of the total amount-bad block of block)/type of data packet;
The backup number of b07, all types of packet in acquisition corresponding data memory block;
Whether b08, inquiry have the backup number of packet to be greater than on average to back up number, if the backup number of packet is all not more than and on average backs up number in respective data storage district, then perform step b09, otherwise perform b10;
B09, obtain address that packet to be written backs up the earliest itself as writing address;
B10, obtain backup number be greater than average backup number and the minimum packet in the address address of backing up the earliest as writing address;
B11, the writing address that packet write above-mentioned steps to be written is obtained.
Whether S105, checking data bag successfully write.By checking procedure, guarantee that packet to be written successfully writes, prevent from accidentally writing unsuccessfully or packet to be written being write in bad block the situation causing loss of data.
As shown in Figure 5, what whether described checking data bag successfully write specifically comprises the following steps:
Before c01, reading new write packet and write, packet compares;
Whether c02, judgement new write packet be completely the same with the front packet of write, if completely the same, performs step c03, otherwise perform c04;
C03, packet write successfully;
C04, judge that whether inconsistent number of times is more than three times, if inconsistent number of times is more than three times, then perform step c06, otherwise perform step c05;
C05, re-write packet, and perform c01;
C06, mark bad block in the buffer;
C07, judge whether packet writes in static store mode, is perform step c08, otherwise perform step c09;
C08, stopping write, and perform step c10;
C09, again acquisition writing address write packet to be written, and perform step c10;
C10, perform bad block detect.
In addition, the present invention makes packet repeatedly back up by dynamic memory mode, adds the security that data store; By bad block data, bad block is indicated, thus mask defect block addresses in read-write addressing algorithm, reduce address-time, thus shorten the access time.
Above-described embodiment is the present invention's preferably embodiment; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (9)
1. the storage means of an EEPROM, it is characterized in that, described EEPROM is divided into valid data memory block and bad block data memory block, described valid data memory block is for storing valid data, described bad block data memory block is for storing bad block data, and described bad block data is for storing the bad block message in EEPROM; Described valid data comprise factory's tune-up data, manual operation data and wireless receiving data, accordingly, valid data memory block is divided into the few more new district for depositing factory's tune-up data in units of data block, for depositing more new district and the more new district fast for depositing wireless receiving data at a slow speed of manual operation data; Described EEPROM powers on when running and comprises the following steps:
Steps A, within the time period preset, intercept valid data, each class valid data forms the packet that one or more sizes corresponding are not more than data block capacity respectively;
Step B, will the packet of renewal be had to write in EEPROM in corresponding valid data memory block as packet to be updated, if packet to be updated is the packet of factory's tune-up data, write few more new district in static store mode, if packet to be updated is the packet of artificial service data, write at a slow speed more new district in dynamic memory mode, if packet to be updated is the packet of wireless receiving data, write fast more new district in dynamic memory mode;
Wherein, the dynamic memory mode in described step B is specific as follows:
B01, judge the whether free block in valid data memory block that packet to be written is corresponding, if free block, perform step b02, otherwise perform step b03;
B02, obtain the minimum empty block address in address as writing address;
B03, obtain the total amount of block in the corresponding valid data memory block of packet to be written;
B04, obtain the total amount of type of data packet in the corresponding valid data memory block of packet to be written;
B05, obtain the total amount of bad block in the corresponding valid data memory block of packet to be written;
B06, the integral part of taking the mean as on average backing up number, the total amount of described average=(total amount of the total amount-bad block of block)/type of data packet;
B07, obtain the backup number of all types of packet in corresponding valid data memory block;
Whether b08, inquiry have the backup number of packet to be greater than on average to back up number, if the backup number of packet is all not more than and on average backs up number in corresponding valid data memory block, then perform step b09, otherwise perform b10;
B09, obtain address that packet to be written backs up the earliest itself as writing address;
B10, obtain backup number be greater than average backup number and the minimum packet in the address address of backing up the earliest as writing address;
B11, the writing address that packet write above-mentioned steps to be written is obtained.
2. the storage means of EEPROM according to claim 1, is characterized in that: divide the number of data block in corresponding valid data memory block according to the importance of data and the speed of packet renewal frequency in the number of packet, packet.
3. the storage means of EEPROM according to claim 2, is characterized in that: be also included in and intercept before valid data by reading the information of EEPROM, in RAM, set up concordance list.
4. the storage means of EEPROM according to claim 3, is characterized in that: described concordance list comprises the array of the array of the identifier composition of each packet in EEPROM and the timestamp composition of each packet.
5. the storage means of EEPROM according to claim 4, is characterized in that: also comprise the bad block detecting step after setting up concordance list.
6. the storage means of EEPROM according to claim 5, is characterized in that, the step that described bad block detects is specific as follows:
The address of a01, acquisition data to be tested block;
A02, be the data of " 1 " entirely obtaining write in data block corresponding to address;
The data of a03, read step a02 write;
Whether the data that the data of a04, determining step a03 reading and step a02 write are completely the same; If both are completely the same, then perform step a05, otherwise perform a08;
A05, in mark bad block corresponding to address that step a01 obtains write be the data of " 0 " entirely;
The data of a06, read step a05 write;
Whether the data that the data of a07, determining step a06 reading and step a05 write are completely the same; If both are not quite identical, then perform step a08, otherwise perform a09;
A08, judge that this data block is as bad block, upgrade bad block data, and perform step a10;
A09, decision data block are health data block, discharge corresponding bad block mark, and perform step a10;
A10, judge whether to need to detect data block, if there is data block to be detected, perform step a11, otherwise perform step a12;
A11, obtain next data to be tested block address, and perform step a02;
A12, renewal concordance list.
7. the storage means of EEPROM according to claim 6, is characterized in that: obtain writing address by the concordance list in inquiry RAM in described step B.
8. the storage means of EEPROM according to claim 1, is characterized in that: after also comprising write packet, the checking procedure whether checking data bag successfully writes.
9. the storage means of EEPROM according to claim 8, it is characterized in that, described checking procedure comprises:
Before c01, reading new write packet and write, packet compares;
Whether c02, judgement new write packet be completely the same with the front packet of write, if completely the same, performs step c03, otherwise perform c04;
C03, packet write successfully;
C04, judge that whether inconsistent number of times is more than three times, if inconsistent number of times is more than three times, then perform step c06, otherwise perform step c05;
C05, re-write packet, and perform c01;
C06, mark bad block in the buffer;
C07, judge whether packet writes in static store mode, is perform step c08, otherwise perform step c09;
C08, stopping write, and perform step c10;
C09, again acquisition writing address write packet to be written, and perform step c10;
C10, perform bad block detect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210364425.1A CN102929794B (en) | 2012-09-26 | 2012-09-26 | The storage means of a kind of EEPROM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210364425.1A CN102929794B (en) | 2012-09-26 | 2012-09-26 | The storage means of a kind of EEPROM |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102929794A CN102929794A (en) | 2013-02-13 |
CN102929794B true CN102929794B (en) | 2015-12-02 |
Family
ID=47644597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210364425.1A Active CN102929794B (en) | 2012-09-26 | 2012-09-26 | The storage means of a kind of EEPROM |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102929794B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105516853B (en) * | 2014-09-26 | 2019-04-30 | 惠州市德赛西威汽车电子股份有限公司 | A kind of vehicle entertainment system sound effect parameters debugging apparatus and method |
CN105788648B (en) * | 2014-12-25 | 2020-09-18 | 研祥智能科技股份有限公司 | NVM bad block identification processing and error correction method and system based on heterogeneous hybrid memory |
CN105741881A (en) * | 2016-01-28 | 2016-07-06 | 浙江绍兴苏泊尔生活电器有限公司 | Storage verification method for static storage area |
CN106940625B (en) * | 2017-03-15 | 2020-07-17 | 四川创能海博科技有限公司 | Data storage method of intelligent electric meter |
CN107025073B (en) * | 2017-04-19 | 2019-12-10 | 浪潮集团有限公司 | NAND FLASH array Mapping information storage method |
CN112035417A (en) * | 2020-09-07 | 2020-12-04 | 浙江大华技术股份有限公司 | Method and device for managing storage block, storage medium and electronic device |
CN113761055A (en) * | 2021-02-02 | 2021-12-07 | 北京沃东天骏信息技术有限公司 | Data writing method, device and storage medium |
CN113342571A (en) * | 2021-05-26 | 2021-09-03 | 南京中科神光科技有限公司 | Method for preventing EEPROM data from losing in case of power failure applied to embedded system |
CN116719480B (en) * | 2023-08-04 | 2023-11-14 | 青岛鼎信通讯股份有限公司 | Electric energy meter data storage method, device and medium based on data twinning |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1297197A (en) * | 2000-12-28 | 2001-05-30 | 大唐电信科技股份有限公司微电子分公司 | More logic partitions in one physical storage and IC cards with different purposes |
US6973531B1 (en) * | 2002-10-28 | 2005-12-06 | Sandisk Corporation | Tracking the most frequently erased blocks in non-volatile memory systems |
CN101540204A (en) * | 2008-03-21 | 2009-09-23 | 深圳市朗科科技股份有限公司 | Method for scanning flash memory medium |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100439507B1 (en) * | 2002-03-18 | 2004-07-09 | 삼성전기주식회사 | Data operating method in flash memory card system of high-capacity |
-
2012
- 2012-09-26 CN CN201210364425.1A patent/CN102929794B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1297197A (en) * | 2000-12-28 | 2001-05-30 | 大唐电信科技股份有限公司微电子分公司 | More logic partitions in one physical storage and IC cards with different purposes |
US6973531B1 (en) * | 2002-10-28 | 2005-12-06 | Sandisk Corporation | Tracking the most frequently erased blocks in non-volatile memory systems |
CN101540204A (en) * | 2008-03-21 | 2009-09-23 | 深圳市朗科科技股份有限公司 | Method for scanning flash memory medium |
Also Published As
Publication number | Publication date |
---|---|
CN102929794A (en) | 2013-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102929794B (en) | The storage means of a kind of EEPROM | |
CN103678144B (en) | Data storage device and flash memory control method | |
US8732480B2 (en) | Memory management device and memory management method | |
CN102081577B (en) | Data storage structure of Flash memory and data manipulation mode thereof | |
EP2626792A1 (en) | Wear leveling method, memory device, and information system | |
US20080282045A1 (en) | Garbage collection in storage devices based on flash memories | |
CN101599046B (en) | Method and device for detecting memory | |
US20120284551A1 (en) | Deep standby method and device for embedded system | |
CN104239225A (en) | Method and device for managing heterogeneous hybrid memory | |
WO2012167392A2 (en) | Method and devices for secure deletion of data in a log structured file system | |
CN105138287A (en) | Storage equipment, interruption control method and power supply time measuring method | |
US20110271032A1 (en) | Access device and memory controller | |
CN103942161B (en) | Redundancy elimination system and method for read-only cache and redundancy elimination method for cache | |
US7945762B2 (en) | Method and apparatus for memory management in a non-volatile memory system using a block table | |
US10514848B2 (en) | Data storage method for selectively storing data in a buffer preset in a memory of an electronic device or an inherent buffer in an SSD | |
CN105022701A (en) | Method for storing running state and parameters of air conditioner | |
CN105094710A (en) | Single-process dynamic storage management method based on Hash table | |
CN114207571B (en) | Computing device and method of operation thereof | |
CN106294217A (en) | A kind of SSD system and power-off protection method thereof | |
CN101526922B (en) | Flash data access method and device thereof | |
CN110989931A (en) | Bad block processing method, device and equipment for storage equipment and storage medium | |
CN107885524A (en) | A kind of date storage method and system based on fota | |
CN102520879A (en) | Priority-based file information storage method, device and system | |
CN110018986B (en) | Abnormal snapshot identification method and device | |
CN103778068A (en) | Flash memory and method for access to same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 516000 Guangdong province Huizhou Zhongkai high tech Zone and five West Road No. 103 Applicant after: HUIZHOU DESAY SV AUTOMOTIVE CO., LTD. Address before: 516000 Guangdong province Huizhou Zhongkai high tech Zone and five West Road No. 103 Applicant before: Huizhou Desay SV Auto. Electronics Co., Ltd. |
|
COR | Change of bibliographic data | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |