CN102903801A - LED (light-emitting diode) chip with adhesive current barrier layer and manufacturing method thereof - Google Patents
LED (light-emitting diode) chip with adhesive current barrier layer and manufacturing method thereof Download PDFInfo
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- CN102903801A CN102903801A CN2011102127107A CN201110212710A CN102903801A CN 102903801 A CN102903801 A CN 102903801A CN 2011102127107 A CN2011102127107 A CN 2011102127107A CN 201110212710 A CN201110212710 A CN 201110212710A CN 102903801 A CN102903801 A CN 102903801A
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Abstract
The invention provides an LED (light-emitting diode) chip with an adhesive current barrier layer and a manufacturing method thereof. The LED chip comprises a sapphire substrate, an light-emitting epitaxial layer formed on the upper surface of the sapphire substrate, a current barrier layer made from Al2O3, a diffuse reflection layer and a transparent conducting layer, wherein a P-pad region of the light-emitting epitaxial layer is provided with a groove which is provided with waved side walls and a flat bottom surface, and the N region of the light-emitting epitaxial layer is provided with an N-pad; the shape of the current barrier layer is matched with that of the groove; the diffuse reflection layer is matched with the structure of the current barrier layer; a P-pad is arranged on the diffuse reflection layer; and the transparent conducting layer is formed on the light-emitting epitaxial layer and the diffuse reflection layer. The invention also provides a manufacturing method of the LED chip with the efficient-reflection P electrode high-adhesiveness current barrier structure, thereby solving the problems of weak adhesiveness and high shedding tendency between the current barrier layer and the high-reflection electrode, light absorption of P electrode, low current utilization ratio and the like of the LED chip in the prior art.
Description
Technical field
The present invention relates to a kind of led chip and preparation method thereof, particularly relate to led chip of a kind of efficient reflective P electrode high-adhesiveness current barrier layer and preparation method thereof.
Background technology
In the design and manufacture of led chip, P-pad in led chip directly adds current barrier layer (CBL below just, current blocking layer) can the current chopping of P-GaN layer will be flowed into by P-pad originally, make electric current all flow into first transparency conducting layer (TCL, Transparent contact layer), and then by transparency conducting layer flow into P-GaN layer under this transparency conducting layer; When not adding current barrier layer, an electric current part flows into transparency conducting layer by P-pad first and flows into P-GaN layer under the transparency conducting layer again, a part flows directly into P-GaN layer and the quantum well radiation under the P-pad, the light that quantum well under the P-pad is sent can be blocked by P-pad basically, this part light can be reflected or be absorbed, and the part that is reflected also has a sizable part to be absorbed at chip internal through behind the Multi reflection, can penetrate the few of chip at last, not adding current barrier layer causes the current density of effective luminous zone to reduce, thereby reduced the brightness of chip, and behind the adding current barrier layer, the electric current that flows directly into the P-GaN layer under the P-pad is truncated, electric current all directly diffuses to effective luminous zone by transparency conducting layer, thereby improved the current density of effective luminous zone, improve the utilance of electric current, and then improved the brightness of chip.
At present, the implementation of interpolation current barrier layer mainly contains two kinds in led chip:
A kind of material that directly adds high-insulativity between P-pad and P-GaN layer will be flowed into the current chopping of P-GaN layer, SiO commonly used in blue-light LED chip originally by P-pad
2Material as current barrier layer, this moment is direct evaporation Cr/Au electrode or the high reflective electrode of evaporation on current barrier layer, cause following problem: one, directly evaporation Cr/Au electrode is very low to the reflectivity of blue light because of Cr, cause chip internal to reflex to the light under the P-pad or be absorbed or be reflected, and the light that is reflected is after chip internal process Multi reflection, sizable part has been absorbed, and can penetrate led chip seldom, thereby has reduced light extraction efficiency; Two, the high reflective electrode of relatively commonly using at present generally is Al or Ag or associated alloys, when using high reflective electrode, a little less than the adhesiveness between current barrier layer and the high reflective electrode, is easy to come off.Therefore, the general only part zone between P-pad and P-GaN layer adds current barrier layer, the zone that does not add in addition current barrier layer makes high reflective electrode directly contact to strengthen adhesiveness with GaN, it is just very not obvious that the current barrier layer of the subregion type current barrier layer of comparing Zone Full promotes the effect of chip brightness like this, and the adhesiveness between high reflective electrode and the chip is still very poor, and causing can't volume production.
Another implementation of adding current barrier layer in led chip is first the quantum well below the P-pad to be etched away that make can not be luminous below the P-pad, the material of high-insulativity is layered on etching sidewall and bottom out as current barrier layer plays insulating effect, then plate the P electrode at current barrier layer, the way that presses down transparency conducting layer by the P electrode edge makes electric current all flow into first transparency conducting layer, and then by the P-GaN layer under the transparency conducting layer inflow transparency conducting layer.SiO commonly used in blue-light LED chip
2Material as current barrier layer, this moment is direct evaporation Cr/Au electrode or the high reflective electrode of evaporation on current barrier layer, still can cause following problem: one, directly evaporation Cr/Au electrode is very low to the reflectivity of blue light because of Cr, cause chip internal to reflex to the light under the P electrode or be absorbed or be reflected, and the light that is reflected is after chip internal process Multi reflection, sizable part has been absorbed, and can penetrate led chip seldom, thereby has reduced light extraction efficiency; Two, when using high reflective electrode, for make high reflective electrode and etching out sidewall and the bottom between insulate, current barrier layer must be paved with whole etching sidewall and bottom out, but the adhesiveness between current barrier layer and the high reflective electrode is not strong, be easy to come off, causing can't volume production.
Therefore, how to propose a kind of manufacture method with led chip of adhesiveness current barrier layer, eliminating above-mentioned poor adhesion, P electrode extinction, problem that current utilization rate is low, become the problem that the practitioner in the art wants to solve in fact.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of led chip that can make this efficient reflective P electrode high-adhesiveness current blocking structures, to solve in the prior art a little less than the adhesiveness between the current barrier layer and high reflective electrode, the problem such as easily come off and P electrode extinction, the current utilization rate of led chip be low.
Reach for achieving the above object other relevant purposes, the invention provides a kind of led chip with adhesiveness current barrier layer and preparation method thereof, wherein, described manufacture method with led chip of adhesiveness current barrier layer, it is characterized in that, described manufacture method may further comprise the steps at least: 1) Sapphire Substrate is provided, and forms a luminous epitaxial loayer in the upper surface of described Sapphire Substrate; 2) on described luminous epitaxial loayer, define respectively P-pad district and N district, be used alternatingly etching gas and passivation gas and etch the groove with ripple glaze sidewall and flat bottom surface in described P-pad district; 3) in surperficial evaporation one deck Al of described groove
2O
3Material makes its formation comply with the current barrier layer of this groove shapes, so that described current barrier layer forms the ground floor sunk structure with ripple glaze sidewall and flat bottom surface; 4) comply with the scattered reflection type reflector of this ground floor sunk structure in surperficial evaporation one deck of described current barrier layer, so that described scattered reflection type reflector forms the second layer sunk structure with ripple glaze sidewall and flat bottom surface; 5) on described luminous epitaxial loayer and scattered reflection type reflector, form a transparency conducting layer, and the described transparency conducting layer of etching, so that described second layer sunk structure and N district expose outside described transparency conducting layer; And 6) on described second layer sunk structure, produce P-pad, and in described N district, produce N-pad.
In the manufacture method of the present invention, described luminous epitaxial loayer is the P-GaN layer.Described scattered reflection type reflector is individual layer scattered reflection type reflection layer structure or multi-layer combined scattered reflection type reflection layer structure.Described scattered reflection type reflector is elemental metals reflector or alloy reflector.
The step 6 of manufacture method of the present invention) in, the bottom of described P-pad connect on the flat bottom surface that places described second layer sunk structure and with the interlock of described ripple glaze sidewall phase.
The present invention also provides a kind of led chip with adhesiveness current barrier layer, it is characterized in that, described led chip comprises at least: Sapphire Substrate; Luminous epitaxial loayer is formed at the upper surface of described Sapphire Substrate, has P-pad district and N district, and described P-pad district has a groove, and described groove has ripple glaze sidewall and flat bottom surface, and described N district is provided with N-pad; Current barrier layer is formed on the described groove, is the ground floor sunk structure of complying with described groove shapes, and described ground floor sunk structure has ripple glaze sidewall and flat bottom surface, and described current barrier layer is Al
2O
3Material; The scattered reflection type reflector is formed on the described current barrier layer, is the second layer sunk structure of complying with described ground floor sunk structure, and described second layer sunk structure has ripple glaze sidewall and flat bottom surface, is provided with P-pad on the described second layer sunk structure; And transparency conducting layer, be formed on described luminous epitaxial loayer and the scattered reflection type reflector, and expose outside described P-pad and N district.
In led chip of the present invention, described luminous epitaxial loayer is the P-GaN layer.Described scattered reflection type reflector is individual layer scattered reflection type reflection layer structure or multi-layer combined scattered reflection type reflection layer structure.Described scattered reflection type reflector is elemental metals reflector or alloy reflector.The bottom of described P-pad connect on the flat bottom surface that places described second layer sunk structure and with the interlock of described ripple glaze sidewall phase.
As mentioned above, led chip of the present invention and preparation method thereof has following useful technique effect:
One, adopts Al
2O
3As adhesive, because described Al
2O
3Very strong with metallic mirror (Al or Ag or associated alloys) adhesion power, can guarantee that the high reflective electrode of higher temperatures (more than 80 degrees centigrade) evaporation can not come off, and then overcome available technology adopting SiO
2The shortcoming that causes high reflective electrode to be easy to come off as current barrier layer, and Al
2O
3Can be paved with the zone between whole P electrode and the P-GaN layer, when having avoided using high reflective electrode, can only lay SiO in the subregion in order to increase adhesiveness
2Shortcoming.
Two, described Al
2O
3Insulating properties good, can play the effect of blocking electric current between P electrode and the P-GaN layer as current barrier layer fully, improved current utilization rate.
Three, high reflective electrode has the absorption that the characteristic of high reflectance (＞90%) has reduced Cr/Au electrode pair blue light effectively very much to blue light, simultaneously because metallic mirror is the scattered reflection type speculum, the light all directions to all the winds of directive metallic mirror can be reflexed to effective luminous zone, thus the larger light extraction efficiency that improves chip.
Four, the ripple glaze sidewall below the P electrode can be with the directive sidewall by the to all the winds all directions diffuse reflection of light that high reflective electrode reflects, and has overcome to form when level and smooth sidewall cooperates high reflective electrode directly to the type speculum to make quite most reverberation because along the direction reflection on quantum well plane of living in and a large amount of absorbed shortcoming.
Five, the sidewall of ripple glaze makes the current barrier layer that is laid on sidewall also present ripple glaze, and the current barrier layer of ripple glaze is because higher roughness has higher adhesiveness than the current barrier layer of plane to high reflective electrode, thereby overcome to a certain extent weak ground of high reflective electrode adhesiveness shortcoming.
Description of drawings
Fig. 1 to Fig. 6 is shown as the led chip cross section structure schematic diagram that presents according to each step in the manufacture method of the present invention.
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, person skilled in the art scholar can understand other advantages of the present invention and effect easily by content disclosed in the present specification.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop in the scope that disclosed technology contents contained.Simultaneously, that quotes in this specification reaches the term of " " etc. such as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 1 to Fig. 6, be shown as the middle led chip cross section structure schematic diagram that presents according to each step of the present invention.As shown in the figure, the invention provides a kind of manufacture method with led chip of adhesiveness current barrier layer, described manufacture method may further comprise the steps at least:
As shown in Figure 1, at first execution in step 1, and a Sapphire Substrate 11 is provided, and forms a luminous epitaxial loayer 12 in the upper surface of described Sapphire Substrate 11, and in present embodiment, described luminous epitaxial loayer 12 is the P-GaN layer.Follow execution in step 2.
As shown in Figure 2, in step 2, on described luminous epitaxial loayer 12, define respectively P-pad district (zone shown in the arrow P in the diagram) and N district (zone shown in the arrow N in the diagram), etch a groove 121 with flat bottom surface 1211 and ripple glaze sidewall 1212 in described P-pad district, in present embodiment, by being used alternatingly etching gas and the passivation gas described groove 121 of etching in described P-pad district, the ripple glaze sidewall 1211 of described groove 121 can be reflected the directive sidewall by high reflective electrode to all the winds all directions diffuse reflection of light, and then overcome when level and smooth sidewall cooperates high reflective electrode in the prior art, formation directly makes quite most reverberation reflect and a large amount of absorbed shortcoming because of the direction along quantum well plane of living in to the type speculum.Follow execution in step 3.
As shown in Figure 3, in step 3, in surperficial evaporation one deck Al of described groove 121
2O
3Material, make its formation comply with the current barrier layer 13 of these groove 121 shapes (CBL, current blocking layer), so that described current barrier layer 13 forms the ground floor sunk structure 131 with flat bottom surface 1311 and ripple glaze sidewall 1312, in present embodiment, adopt Al
2O
3As adhesive, because described Al
2O
3Very strong with scattered reflection type described later reflector (also claiming speculum) adhesion power, can guarantee that the high reflective electrode of higher temperatures (more than 80 degrees centigrade) evaporation can not come off, and then overcome available technology adopting SiO
2The shortcoming that causes high reflective electrode to be easy to come off as current barrier layer 13, and Al
2O
3Can be paved with the zone between whole P-pad16 and the luminous epitaxial loayer 12, when having avoided using the P-pad16 for high reflective electrode, in order to increase adhesiveness, can only lay SiO in the subregion
2Shortcoming; Moreover, because described Al
2O
3Insulating properties good, can play the effect of blocking electric current between P-pad16 and the luminous epitaxial loayer 12 as current barrier layer fully, improved current utilization rate.Follow execution in step 4.
As shown in Figure 4, in step 4, in the scattered reflection type reflector 14 that the surperficial evaporation one of described current barrier layer 13 is complied with this ground floor sunk structure 131, so that described scattered reflection type reflector 14 forms the second layer sunk structure 141 with flat bottom surface 1411 and ripple glaze sidewall 1412; In present embodiment, described scattered reflection type reflector 14 can be for the elemental metals reflector of single layer structure, and in other execution mode, described scattered reflection type reflector 14 also can be the alloy reflector of multi-layer combined scattered reflection type reflection layer structure.Because high reflective electrode has the absorption that the characteristic of high reflectance (＞90%) has reduced Cr/Au electrode pair blue light effectively very much to blue light, thereby the scattered reflection type reflector 14 (speculum) that the led chip among the present invention 1 adopts is the scattered reflection type speculum, so the light all directions to all the winds in directive scattered reflection type reflector 14 can be reflexed to effective luminous zone, and then larger light extraction efficiency that improves chip.Follow execution in step 5.
As shown in Figure 5, in step 5, on described luminous epitaxial loayer 12 and scattered reflection type reflector 14, form a transparency conducting layer (TCL, Transparent contact layer) 15, and the described transparency conducting layer 15 of etching, so that described second layer sunk structure 141 and N district expose outside described transparency conducting layer 15, so that form P-pad16 at described second layer sunk structure 141 in the follow-up processing procedure, produce N-pad17 in described N district.Follow execution in step 6.
As shown in Figure 6, in step 6, on described second layer sunk structure 141, produce P-pad16, and in described N district, produce N-pad17.In present embodiment, the bottom of described P-pad16 connect on the flat bottom surface 1411 that places described second layer sunk structure 141 and with described ripple glaze sidewall 1412 phase interlocks, so just, described P-pad16 can be arranged at securely described P-pad district, and then solve that electrode holds caducous problem in the prior art.
The present invention also provides a kind of led chip with adhesiveness current barrier layer, described led chip 1 comprises at least: Sapphire Substrate 11, luminous epitaxial loayer 12, current barrier layer 13 (CBL, current blocking layer), scattered reflection type reflector 14, and transparency conducting layer 15 (TCL, Transparent contact layer).
For ease of understanding, please consult again Fig. 1 to Fig. 6, as shown in the figure, described luminous epitaxial loayer 12 is formed at the upper surface of described Sapphire Substrate 11, have P-pad district (zone shown in the arrow P in the diagram) and N district (zone shown in the arrow N in the diagram), and described P-pad district has a groove 121, and described groove 121 has flat bottom surface 1211 and ripple glaze sidewall 1212, and described N district is provided with N-pad17.In present embodiment, described luminous epitaxial loayer 12 is the P-GaN layer.Described groove 121 forms by being used alternatingly the etching in described P-pad district of etching gas and passivation gas, the ripple glaze sidewall 1212 of described groove 121 can be reflected the directive sidewall by high reflective electrode to all the winds all directions diffuse reflection of light, and then overcome when level and smooth sidewall cooperates high reflective electrode in the prior art, formation directly makes quite most reverberation reflect and a large amount of absorbed shortcoming because of the direction along quantum well plane of living in to the type speculum.
Described current barrier layer 13 is formed on the described groove 121, is a ground floor sunk structure 131 of complying with described groove 121 shapes, and described ground floor sunk structure 131 has flat bottom surface 1311 and ripple glaze sidewall 1312, and described current barrier layer 13 is Al
2O
3Material in present embodiment, adopts Al
2O
3As adhesive, because described Al
2O
3Very strong with scattered reflection type described later reflector 14 (also claiming speculum) adhesion power, can guarantee that the high reflective electrode of higher temperatures (more than 80 degrees centigrade) evaporation can not come off, and then overcome available technology adopting SiO
2The shortcoming that causes high reflective electrode to be easy to come off as current barrier layer 13, and Al
2O
3Can be paved with the zone between whole P-pad16 and the luminous epitaxial loayer 12, when having avoided using high reflective electrode, can only lay SiO in the subregion in order to increase adhesiveness
2Shortcoming; Moreover, because described Al
2O
3Insulating properties good, can play the effect of blocking electric current between P-pad16 and the luminous epitaxial loayer 12 as current barrier layer 13 fully, improved current utilization rate.
Described scattered reflection type reflector 14 is formed on the described current barrier layer 13, it is a second layer sunk structure 141 of complying with described ground floor sunk structure 131, and described second layer sunk structure 141 has flat bottom surface 1411 and ripple glaze sidewall 1412, be provided with P-pad16 on the described second layer sunk structure 141, and the bottom of described P-pad16 connects on the flat bottom surface 1411 that places described second layer sunk structure 141 and with described ripple glaze sidewall 1412 phase interlocks.So just, described P-pad16 can be arranged at securely described P-pad district, and then solve that electrode holds caducous problem in the prior art.
In present embodiment, described scattered reflection type reflector 14 can be for the elemental metals reflector of single layer structure, and in other execution mode, described scattered reflection type reflector 14 also can be the alloy reflector of multi-layer combined scattered reflection type reflection layer structure.Because high reflective electrode has the absorption that the characteristic of high reflectance (＞90%) has reduced Cr/Au electrode pair blue light effectively very much to blue light, thereby the scattered reflection type reflector 14 (speculum) that the led chip among the present invention 1 adopts is the scattered reflection type speculum, so the light all directions to all the winds in directive scattered reflection type reflector 14 can be reflexed to effective luminous zone, and then larger light extraction efficiency that improves chip.Described transparency conducting layer 15 is formed on described luminous epitaxial loayer 12 and the scattered reflection type reflector 14, and exposes outside described P-pad16 and N district.
Led chip with adhesiveness current barrier layer of the present invention and preparation method thereof has adopted Al
2O
3As adhesive, can guarantee that the high reflective electrode of higher temperatures (more than 80 degrees centigrade) evaporation can not come off, and described Al
2O
3Insulating properties good, fully can be as current barrier layer, play the effect of blocking electric current between P electrode and the P-GaN layer, improved current utilization rate, moreover, because metallic mirror is the scattered reflection type speculum, the light all directions to all the winds of directive metallic mirror can be reflexed to effective luminous zone, thereby the larger light extraction efficiency that improves chip, in addition, the current barrier layer of ripple glaze is because higher roughness has higher adhesiveness than the current barrier layer of plane to high reflective electrode, thereby overcome to a certain extent weak ground of high reflective electrode adhesiveness shortcoming.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (8)
1. the manufacture method with led chip of adhesiveness current barrier layer is characterized in that, described manufacture method may further comprise the steps at least:
1) provides a Sapphire Substrate, and form a luminous epitaxial loayer in the upper surface of described Sapphire Substrate;
2) on described luminous epitaxial loayer, define respectively P-pad district and N district, be used alternatingly etching gas and passivation gas and etch the groove with ripple glaze sidewall and flat bottom surface in described P-pad district;
3) in surperficial evaporation one deck Al of described groove
2O
3Material makes its formation comply with the current barrier layer of this groove shapes, so that described current barrier layer forms the ground floor sunk structure with ripple glaze sidewall and flat bottom surface;
4) comply with the scattered reflection type reflector of this ground floor sunk structure in surperficial evaporation one deck of described current barrier layer, so that described scattered reflection type reflector forms the second layer sunk structure with ripple glaze sidewall and flat bottom surface;
5) on described luminous epitaxial loayer and scattered reflection type reflector, form a transparency conducting layer, and the described transparency conducting layer of etching, so that described second layer sunk structure and N district expose outside described transparency conducting layer; And
6) on described second layer sunk structure, produce P-pad, and in described N district, produce N-pad.
2. the manufacture method with led chip of adhesiveness current barrier layer according to claim 1, it is characterized in that: described scattered reflection type reflector is the scattered reflection type reflection layer structure of individual layer or the combined type scattered reflection type reflection layer structure of multilayer.
3. the manufacture method with led chip of adhesiveness current barrier layer according to claim 1, it is characterized in that: described scattered reflection type reflector is elemental metals reflector or alloy reflector.
4. the manufacture method with led chip of adhesiveness current barrier layer according to claim 1, it is characterized in that: in described step 6) in, the bottom of described P-pad connect on the flat bottom surface that places described second layer sunk structure and with the interlock of described ripple glaze sidewall phase.
5. the led chip with adhesiveness current barrier layer is characterized in that, described led chip comprises at least:
Sapphire Substrate;
Luminous epitaxial loayer is formed at the upper surface of described Sapphire Substrate, has P-pad district and N district, and described P-pad district has a groove, and described groove has ripple glaze sidewall and flat bottom surface, and described N district is provided with N-pad;
Current barrier layer is formed on the described groove, is the ground floor sunk structure of complying with described groove shapes, and described ground floor sunk structure has ripple glaze sidewall and flat bottom surface, and described current barrier layer is Al
2O
3Material;
The scattered reflection type reflector is formed on the described current barrier layer, is the second layer sunk structure of complying with described ground floor sunk structure, and described second layer sunk structure has ripple glaze sidewall and flat bottom surface, is provided with P-pad on the described second layer sunk structure; And
Transparency conducting layer is formed on described luminous epitaxial loayer and the scattered reflection type reflector, and exposes outside described P-pad and N district.
6. the led chip with adhesiveness current barrier layer according to claim 5, it is characterized in that: described scattered reflection type reflector is the scattered reflection type reflection layer structure of individual layer or the combined type scattered reflection type reflection layer structure of multilayer.
7. the led chip with adhesiveness current barrier layer according to claim 5, it is characterized in that: described scattered reflection type reflector is elemental metals reflector or alloy reflector.
8. the led chip with adhesiveness current barrier layer according to claim 5 is characterized in that: the bottom of described P-pad connect on the flat bottom surface that places described second layer sunk structure and with the interlock of described ripple glaze sidewall phase.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110212710.7A CN102903801B (en) | 2011-07-28 | 2011-07-28 | LED (light-emitting diode) chip with adhesive current barrier layer and manufacturing method thereof |
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|---|---|---|---|
| CN201110212710.7A CN102903801B (en) | 2011-07-28 | 2011-07-28 | LED (light-emitting diode) chip with adhesive current barrier layer and manufacturing method thereof |
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| CN102903801B CN102903801B (en) | 2015-06-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104319333A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip with high-reflectivity electrodes and preparation method thereof |
| CN108231971A (en) * | 2018-02-01 | 2018-06-29 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip and preparation method thereof |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
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| CN101877379A (en) * | 2009-02-25 | 2010-11-03 | Lg伊诺特有限公司 | Light emitting device |
| US20110049472A1 (en) * | 2007-10-29 | 2011-03-03 | Seoul Opto Device Co., Ltd. | Light emitting diode |
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| CN101154792A (en) * | 2006-09-28 | 2008-04-02 | 富士施乐株式会社 | Surface-emitting semiconductor array device |
| CN101431141A (en) * | 2007-09-14 | 2009-05-13 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| US20110049472A1 (en) * | 2007-10-29 | 2011-03-03 | Seoul Opto Device Co., Ltd. | Light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104319333A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip with high-reflectivity electrodes and preparation method thereof |
| CN104319333B (en) * | 2014-10-31 | 2017-10-20 | 广东德力光电有限公司 | A kind of LED chip with high reflection electrode and preparation method thereof |
| CN108231971A (en) * | 2018-02-01 | 2018-06-29 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip and preparation method thereof |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
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|---|---|
| CN102903801B (en) | 2015-06-10 |
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