CN102856444B - Manufacturing method of LED package structure - Google Patents
Manufacturing method of LED package structure Download PDFInfo
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- CN102856444B CN102856444B CN201110181765.6A CN201110181765A CN102856444B CN 102856444 B CN102856444 B CN 102856444B CN 201110181765 A CN201110181765 A CN 201110181765A CN 102856444 B CN102856444 B CN 102856444B
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- pars contractilis
- led
- package structure
- electrode
- manufacture method
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Abstract
A manufacturing method of an LED package structure includes the steps of providing two electrodes insulated to each other; providing a die, comprising a circular die holder and a core contained in the die holder, on one side of the electrodes; forming a reflector in a filling space of the die; adjusting at least one telescopic part to contract the same into a body in the contracted state, removing the die to allow the reflector and the electrodes to enclose a holding space; arranging an LED chip in the holding space, and electrically connecting the reflector and the electrodes; and filling package material into the holding space to form a package layer covering an LED chip, wherein a filling space is reserved between the die holder and the core, the core comprises the body and at least one telescopic part capable of telescoping relative to the body, and the telescopic parts extend out of the body to be extended.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of manufacture method of package structure for LED.
Background technology
Current light-emitting diode (Light Emitting Diode, LED) encapsulating structure generally includes a reflector structure, described reflector sets up the top in substrate, the central authorities of this reflector are provided with this light-emitting diode of collecting accommodation space in the inner, are provided with encapsulated layer in this accommodation space.In prior art, during the reflector of the package structure for LED of manufacture, by providing a mould to be arranged on this substrate, this mould being formed the through hole with the mating shapes of this reflector, in this through hole, filling reflecting material make.After making reflector shaping, mould can remove smoothly, around the plane of inner surface in inclination of this through hole.But, the part of the reflector made by the method and substrate or electrode contact is larger, but the material of reflector and the adhesive force made between the material of substrate or metal usually less, the combination between substrate and reflector is caused closely and easily not form gap, the impurity such as steam and dust is made easily to enter in the package structure for LED after encapsulation along this gap, thus cause the inefficacy of light-emitting diode, affect the life-span of this package structure for LED.
Summary of the invention
In view of this, the manufacture method that a kind of package structure for LED for the manufacture of better tightness is provided is necessary.
A manufacture method for package structure for LED, comprises the following steps:
There is provided two electrodes, two electrode mutually insulateds;
One mould is provided, be arranged at the side of two electrodes, the die holder that this mould comprises an annular and the die be contained in this die holder, a packing space is provided with between described die holder and die, this die comprises a body and relatively can do at least one pars contractilis of stretching motion by this body, and this at least one pars contractilis convexedly stretches in body exterior and is positioned at the state of protruding out;
Reflector is formed at the packing space of described mould;
Regulate this at least one pars contractilis to make it shrink to be positioned at contraction state in body interior, to remove described mould, described reflector and electrode surround an accommodation space jointly;
Light-emitting diode chip for backlight unit is located in described accommodation space, and light-emitting diode chip for backlight unit and described electrode are electrically connected;
In accommodation space, fill encapsulating material and form an encapsulated layer, covering described light-emitting diode chip for backlight unit.
In the manufacture method of above-mentioned package structure for LED, because this mould comprises at least one pars contractilis that relatively can do stretching motion, convexedly stretch in body exterior by regulating this at least one pars contractilis before this reflector shaping and be positioned at the state of protruding out, and after this reflector shaping, regulate this at least one pars contractilis to shrink be positioned at contraction state in body interior, make to form larger contact area between shaping encapsulated layer and described electrode, because the adhesive force of encapsulated layer to metal is greater than the adhesive force of reflector to metal, larger contact area makes the sealing property between encapsulated layer and electrode strengthen further, thus make extraneous steam and impurity be difficult to enter into package interior, play effectively dust-proof, the effect of waterproof.The body of encapsulated layer increases from the position be connected with joint portion gradually to the direction away from joint portion simultaneously, makes the light of light-emitting diode chip for backlight unit can penetrate the outside outgoing of described encapsulated layer smoothly.
Accompanying drawing explanation
Fig. 1 to Fig. 7 is the manufacture method schematic diagram of the package structure for LED that first embodiment of the invention provides.
Fig. 8 is the enlarged drawing of the die of the first mould.
Main element symbol description
| Package structure for LED | 10 |
| Substrate | 11 |
| Insulation division | 111 |
| Electrode | 12 |
| Reflector | 13 |
| Light-emitting diode chip for backlight unit | 14 |
| Plain conductor | 141 |
| Encapsulated layer | 15 |
| Joint portion | 151 |
| Body | 152 |
| Accommodation space | 16 |
| First packing space | 171 |
| Second packing space | 172 |
| First mould | 18 |
| Part I | 181 |
| Body | 1811 |
| Pars contractilis | 1812 |
| Part II | 182 |
| Die holder | 183 |
| Die | 184 |
| Second mould | 19 |
| Control unit | 20 |
| Spring | 21 |
| Connecting rod | 22 |
| Location notch | 221 |
| Catch | 23 |
| Location hole | 24 |
| Shrink space | 25 |
| Backstay | 26 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1 to Fig. 7, the manufacture method of a kind of package structure for LED 10 that embodiment of the present invention provides comprises the following steps.
Refer to Fig. 1, provide two electrode 12, two electrode 12 spacing side by side to arrange, and mutually insulated.Described electrode 12 material used is the alloy of one or more in gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
Refer to Fig. 2, one first mould 18 and one second mould 19 is provided, it is arranged at respectively the both sides of two electrodes 12, clamp this two electrodes 12, in described first mould 18, be formed with the first packing space 171.This first mould 18 comprises the die holder 183 of an annular and is positioned at a die 184 of these die holder 183 central authorities.Described first packing space 171 is formed between described die holder 183 and die 184.This die 184 comprises near the Part I 181 of electrode 12 and the Part II 182 away from electrode 12, the Outside Dimensions of this Part I 181 reduces to the direction away from electrode 12 gradually from the position contacted with electrode 12, and the cross-sectional area of this Part II 182 increases to the direction away from electrode 12 gradually from the position be connected with Part I 181.The degree of depth of this Part I 181 is much smaller than the degree of depth of Part II 182.The Part I 181 of described first mould 18 and Part II 182 inside are hollow structure.This second mould 19 inside is formed with the second packing space 172.Second packing space 172 and the first packing space 171 are interconnected.Understandable, described first mould 18 also can be only provided.
Refer to Fig. 3, filled high polymer material in the first packing space 171 of described first mould 18 and the second packing space 172 of the second mould 19, as PPA(Polyphthalamide, polyvinyl acetate) etc., until described macromolecular material fills up the second packing space 172 of described second mould 19 and the first packing space 171 of the first mould 18 completely.After solidification, form reflector 13 in two electrode 12 sides, simultaneously at two electrodes 12 opposite side formation substrate 11 relatively, the gap of described substrate 11 between two electrodes 12 forms insulation division 111.Described reflector 13 and substrate 11 one-body molded.Understandable, when only providing the first mould 18, described first mould 18 the first packing space 171 filled high polymer material and only in the side of two electrodes 12 formed launch cup 13.
Refer to Fig. 4 and Fig. 5, the Part I 181 of described first mould 18 comprises the body 1811 being positioned at centre and the telescopic pars contractilis 1812 being positioned at the relative both sides of body 1811.Described pars contractilis 1812 can switch between projection state and contraction state, when pars contractilis 1812 is positioned at projection state, pars contractilis 1812 opposing body 1811 is protruding and be positioned at the relative both sides of body 1811, when pars contractilis 1812 is positioned at contraction state, pars contractilis 1812 opposing body 1811 shrinks and is contained in body 1811 inside.In the process of shaping described reflector 13, pars contractilis 1812 is positioned at projection state; When after shaping described reflector 13, shrink this pars contractilis 1812 and can remove described first mould 18 easily.
Please consult Fig. 8 further, this die 184 also comprises the control unit 20 that the described pars contractilis 1812 of a control realizes flexible function.The catch 23 that described control unit 20 comprises a spring 21, two connecting rods 22 respectively between linking springs 21 two ends and described pars contractilis 1812, a positioning rod 26 above connecting rod 22 and is connected between connecting rod 22 and backstay 26.Each connecting rod 22 is provided with the location notch 221 for locating.A shrink space 25 for accommodating described pars contractilis 1812 is also had between described pars contractilis 1812 and body 1811.This body 1811 is in being equipped with location hole 24 towards the both sides of pars contractilis 1812, and described connecting rod 22 connects described spring 21 and pars contractilis 1812 through described location hole 24.Described location hole 24 is for limiting the movement of described connecting rod 22 along other directions except axially.Described pars contractilis 1812 is in when protruding out state, and described spring 21 is stretched, and after extending to desired location, mobile described catch 23 makes its end be contained in respectively in location notch 221, thus makes described pars contractilis 1812 be positioned desired location and remain in the state of protruding out.When mobile described catch 23 makes its end depart from location notch 221, spring 21 recovers deformation and drives described pars contractilis 1812 move to direction, shrink space 25 place and be contained in this shrink space 25, now, can easily described first mould 18 be removed.After removing described first mould 18 and the second mould 19, described reflector 13, substrate 11 and electrode 12 surround an accommodation space 16 jointly.The shape of this accommodation space 16 is identical with the shape of the monnolithic case of the die 184 of the first mould 18.
Refer to Fig. 6, light-emitting diode chip for backlight unit 14 is arranged in described accommodation space 16, and light-emitting diode chip for backlight unit 14 is electrically connected by plain conductor 141 and described electrode 12.Understandable, this light-emitting diode chip for backlight unit 14 also can adopt and cover brilliant mode and to be fixed on electrode 12 and to be electrically connected with described electrode 12.
Refer to Fig. 7, in described accommodation space 16, fill encapsulating material and form an encapsulated layer 15, to encapsulate described light-emitting diode chip for backlight unit 14.This encapsulated layer 15 comprises the joint portion 151 that is sticked mutually with substrate 11 and electrode 12 and the body 152 away from substrate 11.The size of this joint portion 151 reduces from the bottom up gradually from the direction near substrate 11, and the size of this body 152 increases from the top of joint portion 151 from the bottom up gradually to the direction away from substrate 11.The material of described encapsulated layer 15 can be silica gel, epoxy resin or the composition of the two.Described encapsulated layer 15 can also comprise fluorescence transition material.Described encapsulated layer 15 can protect light-emitting diode chip for backlight unit 14 from the impact such as dust, aqueous vapor.The adhesive force of described encapsulated layer 15 pairs of electrodes 12 is greater than the adhesive force of reflector 13 pairs of electrodes 12.
Refer to Fig. 7, be the package structure for LED 10 obtained by the manufacture method of above-mentioned package structure for LED 10, comprise substrate 11, electrode 12, reflector 13, light-emitting diode chip for backlight unit 14 and encapsulated layer 15.
Substrate 11 is a rectangular flat, in order to carry described electrode 12, reflector 13, light-emitting diode chip for backlight unit 14 and encapsulated layer 15 thereon on the surface.The position of the upper surface substantial middle of this substrate 11 forms the insulation division 111 of a rectangle.In the present embodiment, described substrate 11 material is PPA etc.Understandable, the length on the described each limit of substrate 11 can be identical or different, and further, the shape of described substrate 11 is not limited to rectangle, and its shape can also be circle etc., and described substrate 11 also can not form described insulation division 111.
Electrode 12 is two, and described electrode 12 is formed in insulation division 111 both sides on described substrate 11, is mutually electrically insulated between two electrodes 12.Two electrodes 12, in flake, extend from direction away from insulation division 111 of relative two side direction of insulation division 111 respectively, and stretch out the relative two sides of described substrate 11 respectively.Described electrode 12 material used is the good metal material of electric conductivity, as the alloy of one or more in gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
Reflector 13 is positioned on described electrode 12.This reflector 13 entirety is in hollow, rectangular, and its central authorities are provided with the described light-emitting diode chip for backlight unit of a collecting 14 at interior accommodation space 16(Fig. 5).The mating shapes of the monnolithic case of the shape of this accommodation space 16 and the die 184 of the first mould 18.Described reflector 13 can adopt identical material to make, as materials such as PPA with substrate 11.
Light-emitting diode chip for backlight unit 14 is contained in accommodation space 16, and is attached on described electrode 12.Described light-emitting diode chip for backlight unit 14 is electrically connected by plain conductor 141 and described electrode 12.
Encapsulated layer 15 is filled in described accommodation space 16, inner in this accommodation space 16 for covering described light-emitting diode chip for backlight unit 14 and plain conductor 141.The shape of this encapsulated layer 15 and the mating shapes of accommodation space 16, comprise the joint portion 151 that is sticked mutually with substrate 11 and the body 152 away from substrate.The size of this joint portion 151 reduces from the bottom up gradually from the direction near electrode 12, and the size of this body 152 increases from the top of joint portion 151 from the bottom up gradually to the direction away from electrode 12.Thus the light of described light-emitting diode chip for backlight unit 14 outgoing is seldom partly reflected to electrode 12 direction.Compared with the package structure for LED in prior art obtained by manufacture method, between described encapsulated layer 15 and described electrode 12, form larger contact area.The material of described encapsulated layer 15 is silica gel (silicone), epoxy resin (epoxy resin) or the composition of the two.Can also comprise fluorescence transition material in described encapsulated layer 15, this fluorescent transition material can be garnet-base fluorescent material, silicate-based fluorescent powder, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder and nitride based fluorescent material.Wherein, by changing the shape of the pars contractilis 1812 of this first mould 18, the object of the shape of the joint portion 151 changing this encapsulated layer 15 can be reached.
Described encapsulated layer 15 is coated on the periphery of light-emitting diode chip for backlight unit 14, and light-emitting diode chip for backlight unit 14 can be protected from the impact such as dust, steam.Adhesive force due to described encapsulated layer 15 pairs of metals is greater than the adhesive force of reflector 13 pairs of metals, therefore the contact area increasing described encapsulated layer 15 and electrode 12 makes the sealing property between encapsulated layer 15 and electrode 12 strengthen, thus it is inner to make extraneous steam and impurity be difficult to enter into encapsulated layer 15, play the effect of effectively dust-proof, waterproof.Understandable, the shape of this encapsulated layer 15 is not limited to the shape described in the embodiment of the present invention, as long as make the size of the contact area between the joint portion 151 of this encapsulated layer 15 and electrode 12 be greater than this joint portion 151 in the area of the cross section of other position, make to have larger bonded area between this encapsulated layer 15 and electrode 12, body 152 increases gradually to the direction away from joint portion 151 from the position be connected with joint portion 151 and can not affect the outgoing of light simultaneously.
In package structure for LED obtained by the manufacture method that embodiment of the present invention provides, because described reflector 13 underfill has partial encapsulation layer 15, thus increase the contact area of encapsulated layer 15 and electrode 12.Adhesive force due to encapsulated layer 15 pairs of metals is greater than the adhesive force of reflector 13 pairs of metals, larger contact area makes the sealing property between encapsulated layer 15 and electrode 12 strengthen further, thus make extraneous steam and impurity be difficult to enter into package interior, play the effect of effectively dust-proof, waterproof.
Be understandable that, for the person of ordinary skill of the art, other various corresponding change and distortion can be made by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (10)
1. a manufacture method for package structure for LED, comprises the following steps:
There is provided two electrodes, two electrode mutually insulateds;
One mould is provided, be arranged at the side of two electrodes, the die holder that this mould comprises an annular and the die be contained in this die holder, a packing space is provided with between described die holder and die, this die comprises a body and relatively can do at least one pars contractilis of stretching motion by this body, and this at least one pars contractilis convexedly stretches in body exterior and is positioned at the state of protruding out;
Reflector is formed at the packing space of described mould;
Regulate this at least one pars contractilis to make it shrink to be positioned at contraction state in body interior, to remove described mould, described reflector and electrode surround an accommodation space jointly;
Light-emitting diode chip for backlight unit is located in described accommodation space, and light-emitting diode chip for backlight unit and described electrode are electrically connected;
In accommodation space, fill encapsulating material and form an encapsulated layer, covering described light-emitting diode chip for backlight unit.
2. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: this die comprises and the Part I of electrode contact and the Part II away from electrode, described body and at least one pars contractilis form this Part I jointly, and the degree of depth of described Part I is less than the degree of depth of Part II.
3. the manufacture method of the package structure for LED as described in claim 2, is characterized in that: the Outside Dimensions of described Part I is from reducing gradually to the direction away from electrode with the position of electrode contact.
4. the manufacture method of the package structure for LED as described in claim 2, is characterized in that: the cross-sectional area of described Part II increases to the direction away from electrode gradually from the position be connected with Part I.
5. the manufacture method of the package structure for LED as described in claim 1, is characterized in that: the quantity of this at least one pars contractilis is two, and described pars contractilis lays respectively at the relative both sides of body.
6. the manufacture method of the package structure for LED as described in claim 1, is characterized in that: this die also comprises and controls the control unit that this at least one pars contractilis opposing body does stretching motion.
7. the manufacture method of the package structure for LED as described in claim 6, it is characterized in that: described control unit comprises a spring, a connecting rod between linking springs and this at least one pars contractilis, a positioning rod above connecting rod and the catch be connected between connecting rod and backstay, this connecting rod is provided with location notch, when this at least one pars contractilis be positioned at protrude out state time, spring is in deformation state, catch is arranged in and maintains this at least one pars contractilis in location notch and convexedly stretch in body exterior, when this at least one pars contractilis is positioned at contraction state, when spring is in contraction state, catch departs from location notch, spring recovers distortion and maintains this at least one pars contractilis and be contained in body interior.
8. the manufacture method of the package structure for LED as described in claim 7, is characterized in that: be provided with a shrink space for this at least one pars contractilis accommodating between described at least one pars contractilis and body.
9. the manufacture method of package structure for LED as claimed in claim 7, it is characterized in that: described body is in being provided with location hole towards the side of this at least one pars contractilis, described connecting rod connects described spring and this at least one pars contractilis through described location hole, and described location hole is for limiting the movement of described connecting rod along other directions except axially.
10. the manufacture method of the package structure for LED as described in claim 1 to 9 any one, it is characterized in that: also comprise and another molding process is provided, this another mould is arranged at the opposite side of two electrodes, in this another mould, is provided with another packing space; And in another packing space of this another mould filled high polymer material, solidify to form the step of substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110181765.6A CN102856444B (en) | 2011-06-30 | 2011-06-30 | Manufacturing method of LED package structure |
| TW100124131A TWI481079B (en) | 2011-06-30 | 2011-07-08 | Led package and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110181765.6A CN102856444B (en) | 2011-06-30 | 2011-06-30 | Manufacturing method of LED package structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102856444A CN102856444A (en) | 2013-01-02 |
| CN102856444B true CN102856444B (en) | 2015-01-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110181765.6A Expired - Fee Related CN102856444B (en) | 2011-06-30 | 2011-06-30 | Manufacturing method of LED package structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102856444B (en) |
| TW (1) | TWI481079B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275459B (en) * | 2017-06-16 | 2024-02-02 | 万澄林置业(深圳)有限公司 | Package element and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114684A (en) * | 2006-07-26 | 2008-01-30 | 一诠精密工业股份有限公司 | SMD light-emitting diode packaging structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI245437B (en) * | 2004-11-16 | 2005-12-11 | Lighthouse Technology Co Ltd | Package structure of a surface mount device light emitting diode |
| US7906794B2 (en) * | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
| KR101230618B1 (en) * | 2006-09-29 | 2013-02-06 | 서울반도체 주식회사 | Led package having an enclosure for fluorescent resin substance and method for fabricating the same |
| GB0801509D0 (en) * | 2008-01-28 | 2008-03-05 | Photonstar Led Ltd | Light emitting system with optically transparent thermally conductive element |
| TW201017919A (en) * | 2008-10-16 | 2010-05-01 | Advanced Optoelectronic Tech | Package of optoelectronic device and method for fabricating thereof |
| JP2010129655A (en) * | 2008-11-26 | 2010-06-10 | Toyoda Gosei Co Ltd | Led light emitting device |
| TW201031014A (en) * | 2009-02-03 | 2010-08-16 | Everlight Electronics Co Ltd | Light emitting device and fabrication method thereof |
-
2011
- 2011-06-30 CN CN201110181765.6A patent/CN102856444B/en not_active Expired - Fee Related
- 2011-07-08 TW TW100124131A patent/TWI481079B/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114684A (en) * | 2006-07-26 | 2008-01-30 | 一诠精密工业股份有限公司 | SMD light-emitting diode packaging structure |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2010-129655A 2010.06.10 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201301573A (en) | 2013-01-01 |
| TWI481079B (en) | 2015-04-11 |
| CN102856444A (en) | 2013-01-02 |
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