CN102820220A - Forming method of low-temperature silica film - Google Patents
Forming method of low-temperature silica film Download PDFInfo
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- CN102820220A CN102820220A CN2012102290993A CN201210229099A CN102820220A CN 102820220 A CN102820220 A CN 102820220A CN 2012102290993 A CN2012102290993 A CN 2012102290993A CN 201210229099 A CN201210229099 A CN 201210229099A CN 102820220 A CN102820220 A CN 102820220A
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- temperature silica
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Abstract
The invention discloses a low-temperature forming method of a silica film. The method comprises the following steps of: S1, depositing a low-temperature silica film by using SiH4 and an oxygen source at a deposition temperature of less than 300 DEG C; S2, performing long-distance plasma processing on the low-temperature silica film by using oxygen-containing gas; and repeating steps S1 and S2 until a low-temperature silica film with predetermined thickness is formed. According to the forming method, after the low-temperature silica film is deposited, the oxygen-containing gas after generating plasmas outside a reaction chamber is introduced into the reaction chamber; and the plasmas containing various active oxydic particles such as multiple active oxygen ions, oxygen atoms and oxygen molecules can substitute hydrogen in Si-H bonds of low-temperature silica to become stable Si-O bonds, and therefore, the characteristic that the property of the low-temperature silica film varies along with time variation is eliminated, so that the low-temperature silica film can be in a stable state, and the accuracy of patterns in a photolithography technique and the degree of uniformity of key dimensions are improved.
Description
Technical field
The present invention relates to integrated circuit and make field, particularly a kind of formation method of low temperature silica membrane.
Background technology
At present, the low temperature silica membrane is widely used in the hard mask layer of photoresistance top.For example; In dual damascene (Dual Damascene) technology of 90nm, 65nm or 45nm; Form through hole (via) and can in through hole, fill bottom anti-reflection layer similar fillers such as (Barc) afterwards; And then through technologies such as chemical wet etching formation groove (Trench), thereby must select low temperature silicon dioxide for use as the silicon dioxide of hard mask layer this moment, with the character of the retes such as Barc below the too high influence of the depositing temperature of avoiding this hard mask layer.
Said low temperature silicon dioxide is for common silicon dioxide, and common silica membrane adopts normally that more than 400 ℃ temperature deposits, and the low temperature silica membrane normally adopts and deposits less than 300 ℃ temperature.Usually using plasma strengthens chemical vapour deposition (CVD) (PECVD) technology, feeds the silicon source (like SiH
4) and oxygen source (like N
2O) deposition low temperature silica membrane.Yet; Because the depositing temperature during deposition low temperature silica membrane is relatively low; Be generally 50 ~ 300 ℃, cause depositing and contain a large amount of Si-H chemical bonds in the formed silica membrane, and when this low temperature silica membrane is exposed in the atmospheric environment; Si-H is oxidized to Si-OH easily; Si-OH makes this sull have more hydrophily and absorb the steam in the atmosphere easily, so the character of this low temperature silica membrane can gradually change along with the prolongation of time, like thickness, stress, refractive index etc.
Summary of the invention
The present invention provides a kind of formation method of low temperature silica membrane, so that this low temperature silica membrane reaches stable state, thus the accuracy of figure in the raising photoetching process, the uniformity of raising critical size.
For solving the problems of the technologies described above, the formation method of low temperature silica membrane provided by the invention comprises:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane, depositing temperature is less than 300 ℃;
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out remote plasma treatment;
Repeating step S1 and step S2 are until the low temperature silica membrane that forms predetermined thickness.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, oxygen-containing gas is O
2, O
3Or N
2O gas, O
2, O
3Or N
2The flow of O is between 100sccm ~ 50000sccm.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, reaction chamber pressure is between 2Torr ~ 10Torr.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, MW power is between 2000W ~ 4000W.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, each remote plasma treatment time is between 10 seconds ~ 20 seconds.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, oxygen source is N
2O gas.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, deposition low temperature silica membrane in the PECVD chamber.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, depositing temperature is between 50 ℃ ~ 250 ℃.
Optional; In the formation method of described low temperature silica membrane; Among the said step S1, the thickness of the low temperature silica membrane of each deposition is at
Optional, in the formation method of described low temperature silica membrane, said low temperature silica membrane is as hard mask layer.
Compared with prior art, the present invention is after low temperature silica membrane deposition, utilizes oxygen-containing gas outside reaction chamber, to produce plasma (remote plasma; Remote plasma) after; In the feeding reaction chamber, this low temperature silica membrane is carried out remote plasma treatment, because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like; Can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key; The several cycles of going round and beginning again like this finishes after reaching predetermined thickness, thereby has eliminated low temperature silica membrane character along with the time changes and these characteristics of variation, can make this low temperature silica membrane reach stable state; Thereby improved the accuracy of figure in the photoetching process, improved the uniformity of critical size.And; Than the original position plasma treatment; After outside reaction chamber, producing remote plasma remote plasma is fed in the reaction chamber, can avoid damaging the board parts in the reaction chamber, help prolonging the life-span of board itself; And, the film surface that is processed almost had no damage owing to be remote plasma treatment.
Description of drawings
Fig. 1 is the curve synoptic diagram that the thickness of silica membrane changed with the deposition back time;
Fig. 2 is the curve synoptic diagram that the stress of silica membrane changed with the deposition back time;
Fig. 3 is the curve synoptic diagram that the refractive index of silica membrane changed with the deposition back time;
Fig. 4 is the schematic flow sheet of formation method of the low temperature silica membrane of one embodiment of the invention.
Embodiment
In background technology, mention; The character of low temperature silica membrane can gradually change along with the prolongation of time, and through the application inventor's discovery that studies for a long period of time, this is because the depositing temperature during deposition low temperature silica membrane is relatively low; Cause depositing and contain a large amount of Si-H chemical bonds in the formed silica membrane; And when this low temperature silica membrane was exposed in the atmospheric environment, Si-H was oxidized to Si-OH easily, and Si-OH makes this sull have more hydrophily and absorb the steam in the atmosphere easily; Therefore the character of this low temperature silica membrane can gradually change along with the prolongation of time, like thickness, stress, refractive index etc.
Specifically extremely shown in Figure 3 like Fig. 1; Wherein, Fig. 1 is the curve synoptic diagram that the thickness (Thickness) of silica membrane changes with deposition back time (Time after deposition); Fig. 2 is the curve synoptic diagram that the stress (Stress) of silica membrane changes with deposition back time (Time after deposition), and Fig. 3 is the curve synoptic diagram that the refractive index (Refractive Index) of silica membrane changes with deposition back time (Time after deposition).Can know that owing to contain more Si-H key in the low temperature silica membrane, the character of film changes along with change of time acutely, especially within preceding 5 hours, the thickness of film, stress and refractive index all have variation largely.
For this reason; The present invention continues wafer is stayed in the chamber after low temperature silica membrane deposition, utilizes oxygen-containing gas outside reaction chamber, to produce plasma (remote plasma; Remote plasma) after; In the feeding reaction chamber, this low temperature silica membrane is carried out remote plasma treatment (being surperficial dehydrogenation and Passivation Treatment), because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like; Can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key, thereby make this low temperature silica membrane reach stable state.
Detailed, as shown in Figure 4, the low temperature silica membrane of one embodiment of the invention comprises the steps:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane;
Among the said step S1, can in the PECVD chamber, deposit the low temperature silica membrane, also can utilize other conventional technologies to form the low temperature silica membrane.In preferred embodiment, depositing temperature is 50 ℃ ~ 250 ℃, utilizes SiH
4As the silicon source, utilize N
2O gas also can feed nitrogen or argon gas etc. as carrier gas as oxygen source.
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out remote plasma treatment;
Among the said step S2, oxygen-containing gas is preferably O
2, O
3Or N
2O gas, said O
2Or O
3Or N
2The flow of O is between 100sccm ~ 50000sccm, and the radio-frequency power (MW Power) outside the reaction chamber is between 2000W ~ 4000W, and the pressure of reaction chamber is for example between 2Torr ~ 10Torr.
At last, repeating said steps S1 to S2 is until the low temperature silica membrane that forms predetermined thickness.Wherein, The thickness range of the low temperature silica membrane of each deposition is preferably the thickness thickness lucky and that remote plasma treatment can reach that
preferred thickness range is
at this moment and matches, thereby reaches the optimum efficiency that remote plasma is handled.In the present embodiment, multiple twice deposition process of gross weight and twice remote plasma treatment, the time of each remote plasma treatment is 10 seconds ~ 20 seconds, thereby has formed the low temperature silica membrane of predetermined thickness.
In sum; Behind deposition low temperature silica membrane, utilize oxygen-containing gas outside reaction chamber, to produce plasma (remote plasma, remote plasma) after; In the feeding reaction chamber; This low temperature silica membrane is carried out remote plasma treatment,, can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like; The several cycles of going round and beginning again like this finishes after reaching predetermined thickness; These characteristics of having eliminated low temperature silica membrane character to change along with the time and having changed can make this low temperature silica membrane reach stable state, eliminate that low temperature silica membrane character changes in time and the characteristics that change; Thereby the accuracy of figure in the raising photoetching process, and the uniformity of raising critical size.
In addition; Than the original position plasma treatment, remote plasma is fed in the reaction chamber after outside reaction chamber, producing remote plasma, can avoid damaging the board parts in the reaction chamber; Help prolonging the life-span of board itself, and the film surface that is processed is almost had no damage.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (10)
1. the formation method of a low temperature silica membrane is characterized in that, comprising:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane, depositing temperature is less than 300 ℃;
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out remote plasma treatment;
Repeating step S1 and step S2 are until the low temperature silica membrane that forms predetermined thickness.
2. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, said oxygen-containing gas is O
2, O
3Or N
2O gas, said O
2, O
3Or N
2The flow of O is between 100sccm ~ 50000sccm.
3. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, reaction chamber pressure is between 2Torr ~ 10Torr.
4. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, MW power is between 2000W ~ 4000W.
5. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, each remote plasma treatment time is between 10 seconds ~ 20 seconds.
6. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, said oxygen source is N
2O gas.
7. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, and deposition low temperature silica membrane in the PECVD chamber.
8. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, depositing temperature is between 50 ℃ ~ 250 ℃.
9. the formation method of low temperature silica membrane as claimed in claim 1; It is characterized in that; Among the said step S1, the thickness of the low temperature silica membrane of each deposition is at
10. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, said low temperature silica membrane is as hard mask layer.
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|---|---|---|---|
| CN2012102290993A CN102820220A (en) | 2012-07-03 | 2012-07-03 | Forming method of low-temperature silica film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102290993A CN102820220A (en) | 2012-07-03 | 2012-07-03 | Forming method of low-temperature silica film |
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| CN102820220A true CN102820220A (en) | 2012-12-12 |
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| CN2012102290993A Pending CN102820220A (en) | 2012-07-03 | 2012-07-03 | Forming method of low-temperature silica film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390703A (en) * | 2013-08-05 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Preparation method of low-damage and high-density film and LED chip provided with film |
| CN112760615A (en) * | 2020-12-17 | 2021-05-07 | 武汉新芯集成电路制造有限公司 | Silicon dioxide film and low-temperature preparation method thereof |
Citations (4)
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| US6261973B1 (en) * | 1997-12-31 | 2001-07-17 | Texas Instruments Incorporated | Remote plasma nitridation to allow selectively etching of oxide |
| CN1501455A (en) * | 2002-10-31 | 2004-06-02 | ��ʽ���������Ƽ� | Method of fabricating semiconductor device |
| CN101416293A (en) * | 2006-03-31 | 2009-04-22 | 应用材料股份有限公司 | Method to improve the step coverage and pattern loading for dielectric films |
| CN101454886A (en) * | 2006-05-30 | 2009-06-10 | 应用材料股份有限公司 | A method for depositing and curing low-k films for gapfill and conformal film applications |
-
2012
- 2012-07-03 CN CN2012102290993A patent/CN102820220A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261973B1 (en) * | 1997-12-31 | 2001-07-17 | Texas Instruments Incorporated | Remote plasma nitridation to allow selectively etching of oxide |
| CN1501455A (en) * | 2002-10-31 | 2004-06-02 | ��ʽ���������Ƽ� | Method of fabricating semiconductor device |
| CN101416293A (en) * | 2006-03-31 | 2009-04-22 | 应用材料股份有限公司 | Method to improve the step coverage and pattern loading for dielectric films |
| CN101454886A (en) * | 2006-05-30 | 2009-06-10 | 应用材料股份有限公司 | A method for depositing and curing low-k films for gapfill and conformal film applications |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390703A (en) * | 2013-08-05 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Preparation method of low-damage and high-density film and LED chip provided with film |
| CN103390703B (en) * | 2013-08-05 | 2016-08-17 | 聚灿光电科技股份有限公司 | The preparation method of low-damage and high-density film and there is the LED chip of this film |
| CN112760615A (en) * | 2020-12-17 | 2021-05-07 | 武汉新芯集成电路制造有限公司 | Silicon dioxide film and low-temperature preparation method thereof |
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Application publication date: 20121212 |