CN102800575B - Method for removing crystal defects of aluminum liner - Google Patents
Method for removing crystal defects of aluminum liner Download PDFInfo
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- CN102800575B CN102800575B CN201110139378.6A CN201110139378A CN102800575B CN 102800575 B CN102800575 B CN 102800575B CN 201110139378 A CN201110139378 A CN 201110139378A CN 102800575 B CN102800575 B CN 102800575B
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- aluminium
- liner
- aluminium liner
- crystal defect
- tmah solution
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Abstract
The invention discloses a method for removing crystal defects of an aluminum liner. The method comprises the following steps of: spraying a tetramethylammonium hydroxide (TMAH) solution on the surface of the aluminum liner; washing the surface of the aluminum liner by using deionied water (DIW); and drying the aluminum liner. By the method, the crystal defects of the aluminum liner can be removed.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of crystal defect minimizing technology of aluminium liner.
Background technology
The interconnect interface that aluminium liner (Al Pad) is connected with the external world for wafer (wafer), forms metal by making wafer at the keyed jointing line of aluminium pad surfaces with the external world and is connected.The manufacture method of aluminium liner is roughly as follows: adopt physical vapour deposition (PVD) (PVD) technique to form aluminum film layer on top layer metallic layer (top metal) surface of wafer, then adopt photoetching process and etch process to process aluminum film layer, thus form aluminium liner.
After aluminium liner is formed, usually wafer is positioned in front opening unified pod (front open unit pod, FOUP), for entering subsequent processing.FOUP is conventional container wafer being carried out to temporarily storage, in semiconductor manufacture flow path, before wafer proceeds to next board from current board, often adopts FOUP temporarily to store wafer.Fig. 1 adopts FOUP wafer to be carried out to the generalized section temporarily stored, and as shown in Figure 1, FOUP 101 is an open container, and it has slot 102, can be used for wafer W to be fixed in slot 102.Only store a wafer W for FOUP as 1, in actual applications, a FOUP can have many group slots, and therefore a FOUP can store multiple wafer.
Because metallic aluminium (Al) is very easily oxidized in atmosphere, therefore, when wafer is stored in the process of FOUP, one deck aluminium oxide (Al can be formed on the surface of aluminium liner
2o
3) film.In addition, because FOUP comprises plastic material, along with natural degradation, the fluorine ion (F in plastic material
-) can be discharged in air gradually, and, along with the increase of FOUP service time, the F of release
-can get more and more.Steam (H in air
2o) meeting and Al
2o
3in conjunction with generation aluminium hydroxide (Al (OH)
3), meanwhile, the steam in air and F
-in conjunction with generating hydrofluoric acid (HF), Al (OH)
3also can there is chemical reaction with HF further and generate aluminum fluoride (AlF
3).If the Al on aluminium liner top layer
2o
3film is etched completely due to above-mentioned chemical reaction process, and the metallic aluminium below it still can carry out chemical reaction with steam, hydrofluoric acid further, also can generate AlF
3with Al (OH)
3.
AlF
3with Al (OH)
3be the form of expression of crystal defect (crystal defect), Fig. 2 is the schematic diagram of crystal defect, as shown in Figure 2, and the physical appearance of crystal defect meeting appreciable impact aluminium liner and follow-up keyed jointing line.
Summary of the invention
In view of this, the invention provides a kind of crystal defect minimizing technology of aluminium liner, the crystal defect of aluminium liner can be removed.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
A crystal defect minimizing technology for aluminium liner, the method comprises:
At the surface sprinkling Tetramethylammonium hydroxide TMAH solution of aluminium liner;
Deionized water DIW is adopted to rinse aluminium pad surfaces.
After adopting DIW flushing aluminium pad surfaces, the method comprises further: dry aluminium liner.
The concentration of described TMAH solution is greater than 0% and is less than 10%.
After spraying described TMAH solution, the described time of staying of TMAH solution on aluminium liner is greater than 0 second and is less than 75 seconds.
Based on the crystal defect minimizing technology of a kind of aluminium liner provided by the present invention, first at the surface sprinkling TMAH solution of aluminium liner, TMAH and AlF
3there is chemical reaction at normal temperatures, (the CH of generation
3)
4nF and Al (OH)
3be dissolved in liquid form in water, then, adopt DIW to rinse aluminium liner, will (the CH in water be dissolved in
3)
4nF and Al (OH)
3rinse out, the another kind of crystal defect Al (OH) simultaneously also aluminium pad surfaces had itself
3rinse out, visible, the solution of the present invention can remove the crystal defect of aluminium liner.
Accompanying drawing explanation
Fig. 1 adopts FOUP wafer to be carried out to the generalized section temporarily stored.
Fig. 2 is the schematic diagram of crystal defect.
Fig. 3 is the flow chart of the embodiment of the crystal defect minimizing technology of a kind of aluminium liner provided by the present invention.
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, to develop simultaneously embodiment referring to accompanying drawing, scheme of the present invention is described in further detail.
Core concept of the present invention is: the form of expression of crystal defect is mainly AlF
3with Al (OH)
3, the present invention at the surface sprinkling TMAH solution of aluminium liner, TMAH and AlF
3there is chemical reaction at normal temperatures, (the CH of generation
3)
4nF and Al (OH)
3be dissolved in liquid form in water, then adopt DIW to rinse aluminium liner, will (the CH in water be dissolved in
3)
4nF and Al (OH)
3rinse out, simultaneously also by the another kind of form of expression Al (OH) of crystal defect
3rinse out, therefore, the solution of the present invention can remove the crystal defect of aluminium pad surfaces.
Fig. 3 is the flow chart of the embodiment of the crystal defect minimizing technology of a kind of aluminium liner provided by the present invention, and as shown in Figure 3, the method comprises:
Step 301, at surface sprinkling Tetramethylammonium hydroxide (Tetra Methyl Ammonium Hydride, the TMAH) solution of aluminium liner.
The molecular formula of TMAH is (CH
3)
4nOH, its can with AlF
3there is chemical reaction at normal temperatures, generate Methanaminium, N,N,N-trimethyl-, fluoride and Al (OH)
3, wherein, the molecular formula of Methanaminium, N,N,N-trimethyl-, fluoride is (CH
3)
4nF, below, adopt chemical equation (1) to represent the principle of above-mentioned chemical reaction:
6(CH
3)
4NOH+2AlF
3+(x+3)H
2O＝6(CH
3)
4NF+2Al(OH)
3+(x+3)H
2O (1)
It should be noted that, described TMAH solution is solute (TMAH) and solvent (H
2o) mixture, in the present embodiment, the concentration of TMAH solution can for being greater than 0% and being less than 10% (described concentration is the mass ratio of TMAH and TMAH solution).
In actual applications, we can directly adopt name to be called the product (manufacturing enterprise: TOKYO OHKA KOGYO CO of " developer solution NMD-W 2.38% " usually, LTD) be sprayed on aluminium liner, " developer solution NMD-W 2.38% " to be a kind of concentration be 2.38% TMAH solution.
(the CH that above-mentioned chemical reaction generates
3)
4nF and Al (OH)
3be dissolved in liquid form in water, will remove in subsequent step, and (the CH generated
3)
4nF can not cause erosion to aluminium liner.
Step 302, adopts deionized water (DIW) to rinse aluminium pad surfaces.
In this step, the surface adopting DIW to rinse aluminium liner mainly contains two objects: the first, the product in chemical equation (1) (can be dissolved in (the CH in water
3)
4nF and Al (OH)
3) rinse out; The second, the crystal defect due to aluminium pad surfaces may be also Al (OH)
3, due to solid-state Al (OH)
3be with the Powdered surface being attached to aluminium liner, therefore, DIW can be adopted pulverous Al (OH)
3directly rinse out.
Step 303, dries (spin dry) aluminium liner.
In this step, the object of carrying out drying carries out drying to aluminium liner, to remove the unnecessary DIW of aluminium pad surfaces.
Wherein, drying is drying means conventional in existing manufacture of semiconductor, no longer describes in detail herein, can implement with reference to method corresponding in prior art.
So far, this flow process terminates.
In addition, in above-mentioned steps 301, after the surface sprinkling TMAH solution of aluminium liner, if TMAH is by AlF
3whole removal, due to the hydroxyl (OH in TMAH
-) also can further and AlF
3the metallic aluminium generation chemical reaction of below generates Al (OH)
3, therefore, if the TMAH solution sprayed is at aluminium pad surfaces overstand, erosion may be caused to metallic aluminium further.Certainly, if only cause microetching to metallic aluminium, this can accept, and what need to avoid is excessive erosion to metallic aluminium.We measure by experiment, for the metal aluminium flake of 7000 dusts (A) thickness, if " developer solution NMD-W 2.38% " is sprayed thereon, when " the developer solution NMD-W 2.38% " time of staying, (puddle time) was 75 seconds (s), the thickness that metal aluminium flake is etched is 300A, because the thickness be etched is far smaller than metal aluminium flake thickness originally, therefore, the time of staying being less than 75 seconds can accept.
With above-mentioned experimental data as a reference, and in conjunction with practical operation experience, in the present invention, the time of staying of TMAH solution on aluminium liner also can be defined as and be greater than 0 second and be less than 75 seconds, to prevent the excessive erosion to aluminium liner by we.Suppose that the moment starting to spray TMAH solution is T1, suppose that the moment starting to adopt DIW to rinse is T2, then the described time of staying of TMAH solution on aluminium liner refers to T1 to the T2 time period.
Also it should be noted that, aluminium liner of the present invention refers to the aluminium liner with crystal defect, in actual applications, the method of usual employing range estimation judges whether the surface of aluminium liner exists crystal defect, if do not exist, then directly can enter subsequent processing, if exist, after then adopting method provided by the present invention removal crystal defect, then enter subsequent processing.
To sum up, based on technical scheme provided by the present invention, first at the surface sprinkling TMAH solution of aluminium liner, TMAH and AlF
3there is chemical reaction at normal temperatures, (the CH of generation
3)
4nF and Al (OH)
3be dissolved in liquid form in water, then, adopt DIW to rinse aluminium liner, will (the CH in water be dissolved in
3)
4nF and Al (OH)
3rinse out, meanwhile, the another kind of crystal defect Al (OH) also aluminium pad surfaces had itself
3rinse out, visible, technical scheme of the present invention can remove the crystal defect of aluminium liner.
The above, be only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a crystal defect minimizing technology for aluminium liner, the method comprises:
Form aluminium liner, the wafer with described aluminium liner is positioned over front opening unified pod, described aluminium pad surfaces is formed with aluminum oxide film, described front opening unified pod comprises the plastic material of fluoride ion, and the steam in described fluorine ion and air, described aluminum oxide film film reaction generate crystal defect;
At the surface sprinkling Tetramethylammonium hydroxide TMAH solution of aluminium liner;
Deionized water DIW is adopted to rinse aluminium pad surfaces.
2. method according to claim 1, is characterized in that, after adopting DIW flushing aluminium pad surfaces, the method comprises further: dry aluminium liner.
3. method according to claim 1 and 2, is characterized in that, the concentration of described TMAH solution is greater than 0% and is less than 10%.
4. method according to claim 3, is characterized in that, after spraying described TMAH solution, the described time of staying of TMAH solution on aluminium liner is greater than 0 second and is less than 75 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110139378.6A CN102800575B (en) | 2011-05-26 | 2011-05-26 | Method for removing crystal defects of aluminum liner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110139378.6A CN102800575B (en) | 2011-05-26 | 2011-05-26 | Method for removing crystal defects of aluminum liner |
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| Publication Number | Publication Date |
|---|---|
| CN102800575A CN102800575A (en) | 2012-11-28 |
| CN102800575B true CN102800575B (en) | 2015-01-28 |
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ID=47199646
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|---|---|---|---|
| CN201110139378.6A Active CN102800575B (en) | 2011-05-26 | 2011-05-26 | Method for removing crystal defects of aluminum liner |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282534B (en) * | 2014-09-24 | 2017-10-24 | 武汉新芯集成电路制造有限公司 | The processing method of cracks of metal surface |
| CN107706093A (en) * | 2017-11-08 | 2018-02-16 | 上海华力微电子有限公司 | A kind of manufacture method of aluminium pad |
| CN109979835A (en) * | 2019-04-09 | 2019-07-05 | 德淮半导体有限公司 | The production method and semiconductor devices of aluminium liner |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW402738B (en) * | 1998-04-24 | 2000-08-21 | United Microelectronics Corp | Method of residues removing |
| CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101205614B (en) * | 2006-12-22 | 2011-06-29 | 深圳富泰宏精密工业有限公司 | Chemical etching liquor for aluminium and aluminum alloy |
-
2011
- 2011-05-26 CN CN201110139378.6A patent/CN102800575B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW402738B (en) * | 1998-04-24 | 2000-08-21 | United Microelectronics Corp | Method of residues removing |
| CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
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|---|---|
| CN102800575A (en) | 2012-11-28 |
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