CN102760839A - Electroluminescent anode, electroluminescent device and preparation method thereof - Google Patents
Electroluminescent anode, electroluminescent device and preparation method thereof Download PDFInfo
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- CN102760839A CN102760839A CN2011101085925A CN201110108592A CN102760839A CN 102760839 A CN102760839 A CN 102760839A CN 2011101085925 A CN2011101085925 A CN 2011101085925A CN 201110108592 A CN201110108592 A CN 201110108592A CN 102760839 A CN102760839 A CN 102760839A
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Abstract
The invention is suitable for the technical field of photoelectricity, and provides an electroluminescent anode, an electroluminescent device and a preparation method thereof. The electroluminescent anode comprises a first medium layer, a second medium layer and a metal layer which are stacked. The metal layer is located between the first medium layer and the second medium layer. The first medium layer and the second medium layer are made of hole-injection metallic oxides. The metal layer is made of light-permeable metal. By the aid of the structure of the first medium layer/the metal layer/the second medium layer, the electroluminescent anode is fine in light permeability. By using the hole-injection metallic oxides, hole-injection performance of the anode is improved evidently, and the electroluminescent anode has excellent hole-injection performance under the premise of having high conductivity and high light permeability.
Description
Technical field
The invention belongs to field of photoelectric technology, relate in particular to a kind of electroluminescence anode, electroluminescent device and preparation method thereof.
Background technology
OLED (electroluminescent device) is luminous to be backlight commonly used at present.OLED can be divided into end emission type and top emission type by the taking-up mode of light, only the taking out from the top of top emission type organic electroluminescence device; The OLED device can be divided into along putting type and inversion type from the order branch of preparation.At present, there is the technical problem that light transmission efficiency is low, the hole injection efficiency is low in the anode of inversion type OLED as exiting surface.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of electroluminescence anode, solves the technical problem that existing electroluminescence anode light transmittance is low, the hole injection efficiency is low.And electroluminescent device and preparation method.
The present invention is achieved in that
A kind of electroluminescence anode comprises the first mutually range upon range of dielectric layer, second dielectric layer and the metal level between this first dielectric layer, second dielectric layer, and the material of this first dielectric layer, second dielectric layer is the hole property an injected metal oxide; The material of this metal level is the light transmission metal.
And;
A kind of electroluminescent device comprises the luminescent layer between mutually range upon range of substrate, negative electrode, anode and this negative electrode, the anode, and this negative electrode contacts with this substrate, and this anode is foregoing electroluminescence anode.
The embodiment of the invention further provides above-mentioned electroluminescent device preparation method, comprises the steps:
On substrate,, form negative electrode through sputter, vapor deposition or spin coating;
On this negative electrode,, form luminescent layer through sputter, vapor deposition or spin coating;
On this luminescent layer with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form first dielectric layer;
On this first dielectric layer,, form metal level through sputter, vapor deposition or spin coating;
On this metal level with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form second dielectric layer, obtain electroluminescent device.
Embodiment of the invention electroluminescence anode through first dielectric layer/metal level/second dielectric layer structure, has good light transmission efficiency; Through using the hole property injected metal oxide, make the hole injection efficiency of anode significantly promote, realized that anode under the prerequisite with high conduction, high light transmittance ability, has excellent hole injection efficiency; Embodiment of the invention electroluminescent device is through using above-mentioned anode, and luminous efficiency, translucent effect significantly promote, and have simplified device preparing process, have improved preparation of devices efficient; Through negative electrode is arranged on the substrate, guaranteed that substrate and negative electrode can be as the bottom reflection mirrors in the device luminescence process, the light that improves device takes out efficient.
Description of drawings
Fig. 1 is embodiment of the invention electroluminescence anode construction figure;
Fig. 2 is an embodiment of the invention electroluminescent device structure chart;
Fig. 3 is that the electroluminescent device energy efficiency and the current density of the embodiment of the invention and Comparative Examples preparation concerns comparison diagram.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of electroluminescence anode; Comprise the first mutually range upon range of dielectric layer, second dielectric layer and the metal level between this first dielectric layer, second dielectric layer, the material of this first dielectric layer, second dielectric layer is the hole property an injected metal oxide; The material of this metal level is the light transmission metal.
The structure of embodiment of the invention electroluminescence anode is medium/medium/metal structure (being the D/M/D structure); Through using this structure; Make the light transmission of electroluminescence anode significantly improve, the light that improves electroluminescent device is taken out efficient have positive effect; Simultaneously,, realized that the conductivity of electroluminescence anode significantly promotes, the operating voltage of device is reduced through the metal level in this electroluminescence anode.
Particularly; See also Fig. 1; Fig. 1 shows the structure of embodiment of the invention electroluminescence anode; This electroluminescence anode 1 comprises first dielectric layer 11, second dielectric layer 13, and this first dielectric layer 11 is mutually range upon range of with second dielectric layer 13, between this first dielectric layer 11 and second dielectric layer 13, also comprises metal level 12.
Particularly, the material of this first dielectric layer, second dielectric layer is the hole property an injected metal oxide, and this hole property injected metal oxide is meant to have the metal oxide of hole injection efficiency, generally is metal oxide semiconductor, for example, and molybdenum trioxide (MoO
3), VO
x((V
2O
5And VO
3)), WO
x(W
2O
5And WO
3, preferred WO
3), in one or more, it is above-mentioned when multiple that property metal oxide is injected in this hole, part by weight separately is restriction not.Through in the electroluminescence anode, using the hole property injected metal oxide; Make the hole injection efficiency of anode significantly promote; Realized that anode is under the prerequisite with high conduction, high light transmittance ability; Have excellent hole injection efficiency, after this anode is used for electroluminescent device, make device luminous efficiency, translucent effect significantly promote; Simultaneously,, can carry out the hole effectively and inject, make and use the electroluminescent device of this anode need not prepare hole injection layer separately, simplify preparation technology, improve the efficient of fabricate devices owing to have the hole property injected metal in this anode;
The thickness of this first dielectric layer, second dielectric layer is the 10-80 nanometer, is preferably 20 nanometers, concrete not restriction.The thickness of first dielectric layer, second dielectric layer is limited within the above-mentioned scope, under the prerequisite of the hole injection efficiency that guarantees this anode, makes the light transmission of this anode maximize.
Particularly, the material of this metal level is the light transmission metal, and this light transmission metal is meant the metal with high light transmission rate; For example; In aluminium, silver, calcium, platinum or the gold one or more, this light transmission metal are above-mentioned when multiple, the disproportional restriction of weight separately.This light transmission metal has excellent conductivity and light transmission, has both guaranteed the electric conductivity of embodiment of the invention electroluminescence anode, makes it have the good light transmittance ability again.
This metal layer thickness is the 5-30 nanometer, is preferably 10 nanometers.
The embodiment of the invention further provides a kind of electroluminescent device, comprises the luminescent layer between mutually range upon range of substrate, negative electrode, anode and this negative electrode, the anode, and this negative electrode contacts with this substrate, and this anode is foregoing electroluminescence anode.
Particularly, see also Fig. 2, Fig. 2 shows embodiment of the invention electroluminescent device structure 2, comprises substrate 21, negative electrode 22, anode 24 and the luminescent layer 23 between this negative electrode 22 and anode 24.This substrate 21, negative electrode 22, luminescent layer 23 and anode 24 are mutually range upon range of, and this negative electrode 22 is positioned on this substrate 21, contacts.
Embodiment of the invention electroluminescent device, negative electrode are positioned on the substrate, belong to the inversion type electroluminescent device; Because the thickness of substrate and negative electrode is far longer than the thickness of anode, so embodiment of the invention electroluminescent device belongs to the top emission type device.
Particularly, the anode in the embodiment of the invention electroluminescent device is identical with aforesaid anode, does not repeat to set forth at this; This substrate is a transparent conducting glass, for example ito glass etc.
Further, embodiment of the invention electroluminescent device also comprise electron injecting layer, electron transfer layer, hole blocking layer, hole transmission layer and one of electronic barrier layer or more than; In conjunction with Fig. 2, the structure of this hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer and electron injecting layer is following:
A, this hole transmission layer and electronic barrier layer are between anode 24 and luminescent layer 23, and order is anode/hole transmission layer/electronic barrier layer/luminescent layer; If do not have in hole transmission layer or the electronic barrier layer any one or more than, promptly on the basis of said sequence, delete, for example do not have transport layer, so, the order be: anode/electronic barrier layer/luminescent layer;
B, this electron injecting layer, electron transfer layer and hole blocking layer are between negative electrode 22 and luminescent layer 23; Order is luminescent layer/hole blocking layer/electron transfer layer/electron injecting layer/negative electrode; If do not have above-mentioned electron injecting layer, electron transfer layer and hole blocking layer; Then on the basis of aforementioned order, delete, identical among delet method and the aforementioned A, do not repeat to set forth at this.
Anode, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, electron transfer layer, electron injecting layer and negative electrode are through using following material in the embodiment of the invention electroluminescent device; Use sputter, spin coating or evaporation coating method preparation, concrete not restriction;
The material of negative electrode is selected from silver (Ag), aluminium (Al), magnesium: silver (Mg:Ag) alloy or gold (Au).Thickness is 20-200nm, is preferably Ag, and thickness is 150nm;
The material of electron transfer layer and hole blocking layer is selected from: 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (like TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ).The hole barrier layer thickness is 3-10nm, is preferably TPBi, and thickness is 5nm, and the electric transmission layer thickness is 40-80nm, is preferably Bphen, and thickness is 60nm;
The material of electron injecting layer is selected from: Cs
2CO
3, CsN
3, LiF, CsF, CaF
2, MgF
2Perhaps NaF.Thickness is 0.5-5nm, also can adopt the doping of above material and electron transport material, and wherein the electronics injection material accounts for mixture quality than being 20-60%, and thickness is 20-60nm.Preferred Bphen:CsN
3, preferred proportion is 20%, thickness is 40nm;
Luminescent layer adopts four-tert-butyl group perylene (TBP).Also can adopt 4-(dintrile methyl)-2-butyl-6-(1; 1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9; 10-two-β-naphthylene anthracene (AND), two (2-methyl-oxine)-(4-xenol) aluminium (BALQ), 4-(dintrile methene)-2-isopropyl-6-(1; 1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTI), dimethylquinacridone (DMQA) or oxine aluminium (Alq
3).
The material of hole transmission layer and electronic barrier layer is selected from: 1, and 1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine (TPD), 4,4 '; 4 " three (carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine (NPB), 1,3,5-triphenylbenzene (TDAPB) or CuPc CuPc.Thickness is 20-80nm, and hole transmission layer is preferably NPB, and thickness is 40nm, and electronic barrier layer is preferably TAPC, and thickness is 5nm.
Embodiment of the invention electroluminescent device makes device luminous efficiency, translucent effect significantly promote through using above-mentioned anode, has simplified device preparing process, has improved preparation of devices efficient; Through negative electrode is arranged on the substrate, guaranteed that substrate and negative electrode can be as the bottom reflection mirrors in the device luminescence process, the light that improves device takes out efficient.
The embodiment of the invention also provides above-mentioned electroluminescent device preparation method, comprises the steps:
On substrate,, form negative electrode through sputter, vapor deposition or spin coating;
On this negative electrode,, form luminescent layer through sputter, vapor deposition or spin coating;
On this luminescent layer with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form first dielectric layer;
On this first dielectric layer,, form metal level through sputter, vapor deposition or spin coating;
On this metal level with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form second dielectric layer, obtain electroluminescent device.
Further, embodiment of the invention preparation method preparing the cleaning step that negative electrode also comprises substrate before, is specially: use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol.
Further; Embodiment of the invention preparation method also comprises one or above preparation process in electron injecting layer, electron transfer layer, hole blocking layer, hole transmission layer or the electronic barrier layer; The material of this electron injecting layer, electron transfer layer, hole blocking layer, hole transmission layer, electronic barrier layer; The preparation method does not repeat to set forth at this with aforementioned identical.
Particularly, this negative electrode, luminescent layer, first dielectric layer, metal level and second dielectric layer do not repeat to set forth at this with aforementioned identical.
Embodiment of the invention preparation method, simple to operate, with low cost, low for equipment requirements, be suitable for suitability for industrialized production.
Below in conjunction with specific embodiment above-mentioned electroluminescent device preparation method is set forth in detail.
Embodiment one
Ito glass is carried out photoetching treatment, be cut into needed light-emitting area, use liquid detergent then successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface;
Clean vapor deposition formation silver cathode on the ito glass later at this;
Vapor deposition on this silver cathode forms Bphen:CsN
3Electron injecting layer;
Vapor deposition, formation Bphen electron transfer layer on this electron injecting layer;
Vapor deposition, formation TPBi hole blocking layer on this electron transfer layer;
Vapor deposition, formation Alq on this hole blocking layer
3Luminescent layer;
Vapor deposition, formation TAPC electronic barrier layer on this luminescent layer;
Vapor deposition, formation NPB hole transmission layer on this electronic barrier layer;
Vapor deposition, formation MoO on this hole transmission layer
3First dielectric layer, thickness are 40nm;
Vapor deposition, formation Ag metal level on this first dielectric layer, thickness is 20nm;
Vapor deposition, formation MoO on this metal level
3Second dielectric layer, thickness is 40nm, obtains electroluminescent device.
Embodiment two
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the thickness of first dielectric layer is 20 nanometers.
Embodiment three
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the thickness of first dielectric layer is 10 nanometers; The thickness of second dielectric layer is 60 nanometers.
Embodiment four
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the thickness of first dielectric layer, second dielectric layer is 60 nanometers.
Embodiment five
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, metal layer thickness is 15 nanometers.
Embodiment six
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the material of first dielectric layer, second dielectric layer is WO
3The thickness of first dielectric layer is 50 nanometers, and the thickness of second dielectric layer is 60 nanometers; Metal layer thickness is 15 nanometers.
Embodiment seven
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the material of first dielectric layer, second dielectric layer is WO
3The thickness of first dielectric layer, second dielectric layer is 25 nanometers; The material of metal level is Au, and thickness is 10 nanometers.
Embodiment eight
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the material of first dielectric layer, second dielectric layer is WO
3The thickness of first dielectric layer, second dielectric layer is 55 nanometers; The material of metal level is Pt, and thickness is 30 nanometers.
Embodiment nine
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the material of metal level is Au; The thickness of first dielectric layer, second dielectric layer is 35 nanometers.
Embodiment ten
Embodiment of the invention electroluminescent device preparation method is according to embodiment one, and wherein, the material of metal level is Pt; The thickness of first dielectric layer, second dielectric layer is 80 nanometers.
Comparative Examples
This Comparative Examples electroluminescent device preparation method wherein, does not have first dielectric layer and second dielectric layer with reference to embodiment one in the anode.
See also Fig. 3, Fig. 3 shows the comparison diagram that concerns between electroluminescent device energy efficiency (brightness) and the current density (voltage) of the embodiment of the invention and Comparative Examples preparation.Can see that from Fig. 3 under same current density, the luminous efficiency of the device of the embodiment preparation all luminous efficiency than the device of Comparative Examples preparation is high, the adding that D/M/D be described has tangible effect to the raising of light taking-up efficient.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an electroluminescence anode comprises the first mutually range upon range of dielectric layer, second dielectric layer and the metal level between said first dielectric layer, second dielectric layer, and the material of said first dielectric layer, second dielectric layer is the hole property an injected metal oxide; The material of said metal level is the light transmission metal.
2. electroluminescence anode as claimed in claim 1 is characterized in that, the said hole property injected metal oxide is selected from MoO
3, VO
xOr WO
xIn one or more.
3. electroluminescence anode as claimed in claim 1 is characterized in that, the thickness of said first dielectric layer, second dielectric layer is the 10-80 nanometer.
4. electroluminescence anode as claimed in claim 1 is characterized in that, said light transmission metal is selected from one or more in aluminium, silver, calcium, platinum or the gold.
5. electroluminescence anode as claimed in claim 1 is characterized in that, said metal layer thickness is the 5-30 nanometer.
6. an electroluminescent device comprises the luminescent layer between mutually range upon range of substrate, negative electrode, anode and said negative electrode, the anode, and said negative electrode contacts with said substrate, and said anode is each described electroluminescence anode of claim 1-5.
7. an electroluminescent device preparation method comprises the steps:
On substrate,, form negative electrode through sputter, vapor deposition or spin coating;
On said negative electrode,, form luminescent layer through sputter, vapor deposition or spin coating;
On said luminescent layer with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form first dielectric layer;
On said first dielectric layer,, form metal level through sputter, vapor deposition or spin coating;
On said metal level with the hole property injected metal oxide through sputter, vapor deposition or spin coating, form second dielectric layer, obtain electroluminescent device.
8. electroluminescent device preparation method as claimed in claim 7 is characterized in that, the thickness of said first dielectric layer, second dielectric layer is the 10-80 nanometer.
9. electroluminescent device preparation method as claimed in claim 7 is characterized in that, the said hole property injected metal oxide is selected from molybdenum trioxide, VO
xOr WO
xIn one or more.
10. electroluminescent device preparation method as claimed in claim 7 is characterized in that, said metal layer thickness is the 5-30 nanometer; Said light transmission metal is selected from one or more in aluminium, silver, calcium, platinum or the gold.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183747A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN108878683A (en) * | 2018-06-29 | 2018-11-23 | 云南大学 | A kind of metal oxide stack field-effect electrode |
| CN109661734A (en) * | 2017-08-11 | 2019-04-19 | 株式会社Lg化学 | Organic electroluminescence device and its manufacturing method |
| CN109713140A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | Film and preparation method thereof and QLED device |
| CN109713152A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | A kind of film and preparation method thereof and QLED device |
| CN110112325A (en) * | 2019-06-19 | 2019-08-09 | 京东方科技集团股份有限公司 | Transparent cathode structure, Organic Light Emitting Diode, array substrate and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
| CN1468038A (en) * | 2002-06-22 | 2004-01-14 | ����Sdi��ʽ���� | Organic electroluminescent device employing multi-layered anode |
| CN1684557A (en) * | 2004-03-26 | 2005-10-19 | 株式会社半导体能源研究所 | Light emitting device and manufacturing method thereof |
| CN2867601Y (en) * | 2005-11-29 | 2007-02-07 | 胜华科技股份有限公司 | Organic luminous module |
| US20080315763A1 (en) * | 2007-04-18 | 2008-12-25 | Osram Opto Semiconductors Gmbh | Organic optoelectronic component |
-
2011
- 2011-04-28 CN CN2011101085925A patent/CN102760839A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
| CN1468038A (en) * | 2002-06-22 | 2004-01-14 | ����Sdi��ʽ���� | Organic electroluminescent device employing multi-layered anode |
| CN1684557A (en) * | 2004-03-26 | 2005-10-19 | 株式会社半导体能源研究所 | Light emitting device and manufacturing method thereof |
| CN2867601Y (en) * | 2005-11-29 | 2007-02-07 | 胜华科技股份有限公司 | Organic luminous module |
| US20080315763A1 (en) * | 2007-04-18 | 2008-12-25 | Osram Opto Semiconductors Gmbh | Organic optoelectronic component |
Non-Patent Citations (3)
| Title |
|---|
| HYUNSU CHO ET AL.: ""Highly flexible organic light-emitting diodes based on ZnS/Ag/WO3 multilayer transparent electrodes"", 《ORGANIC ELECTRONICS》 * |
| L.CATTIN ET AL.: ""Investigation of low resistance transparent MoO3/Ag/MoO3 multilayer and application as anode in organic solar cells"", 《THIN SOLID FILMS》 * |
| SEUNG YOON RYU ET AL.: ""Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode"", 《APPLIED PHYSICS LETTERS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183747A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN109661734A (en) * | 2017-08-11 | 2019-04-19 | 株式会社Lg化学 | Organic electroluminescence device and its manufacturing method |
| CN109713140A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | Film and preparation method thereof and QLED device |
| CN109713152A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | A kind of film and preparation method thereof and QLED device |
| CN108878683A (en) * | 2018-06-29 | 2018-11-23 | 云南大学 | A kind of metal oxide stack field-effect electrode |
| CN110112325A (en) * | 2019-06-19 | 2019-08-09 | 京东方科技集团股份有限公司 | Transparent cathode structure, Organic Light Emitting Diode, array substrate and display device |
| CN110112325B (en) * | 2019-06-19 | 2022-07-08 | 京东方科技集团股份有限公司 | Transparent cathode structure, organic light emitting diode, array substrate and display device |
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Application publication date: 20121031 |