CN102741189A - 生产结构化的tco保护层的方法 - Google Patents
生产结构化的tco保护层的方法 Download PDFInfo
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
生产经涂覆的玻璃衬底的方法，其中a.将层厚度为100nm-1000nm的TCO层(2)沉积到玻璃衬底(1)上，b.将平均层厚度为0.5nm-5nm的包含Al2O3，SiO2，Si3N4和/或它们的混合物的惰性覆层(3)沉积到该TCO层(2)上，和c.将该玻璃衬底(1)在550℃-800℃加热，然后在酸中蚀刻，其中在蚀刻之前不除去该惰性覆层。
Description
本发明涉及生产结构化的TCO保护层的方法，具有结构化TCO保护层的衬底，和它们在太阳能电池和/或显示器中的用途。
具有光学透明的、导电涂层例如TCO(透明的导电氧化物)的衬底被用于光伏和显示器技术的许多领域中。它们充当了太阳能电池，有机发光二极管(OLED)，触摸屏和显示器中的接触电极。在TCO的表征中，重要的特性参数是尽可能高的光学透明度和高的导电率。这些性能使得TCO是吸引人的，特别是作为供太阳能模块用的可透光电极，并且与后电极，缓冲层，抗反射层和实际的光活化半导体一起形成了太阳能电池的基本结构。
用于将日光直接转化成电能的光伏层系统是已知的。该层的材料和排列是如此协调的，以使得通过一个或者多个半导体层来将入射光以尽可能高的辐射产率直接转化成电流。光伏和大面积延伸的层系统被称作太阳能电池。
太阳能电池在全部的情况中包括半导体材料。太阳能电池(其需要载体衬底来提供足够的机械强度)被称作薄膜太阳能电池。归因于物理性能和技术使用性能，具有非晶(amorphen)，非微晶(mikromorphen)或者多晶硅，碲化镉(CdTe)，砷化镓(GaAs)，或者铜铟(镓)-硫/硒化物(CI(G)S)的薄膜系统特别适于太阳能电池。
用于薄膜太阳能电池的已知的载体衬底包括无机玻璃，聚合物或者金属合金，并且可以设计成刚性板或者柔性板，这取决于层厚度和材料性能。归因于广泛可以利用的载体衬底和简单的单片集成，薄膜太阳能电池的大面积装置能够成本有利地生产。
但是，与具有晶体硅或者多晶硅的太阳能电池相比，薄膜太阳能电池具有更低的辐射产率和更低的电效率。基于Cu(In，Ga)(S，Se)2的薄膜太阳能电池具有大致与多晶硅太阳能电池相当的电效率。CI(G)S-薄膜太阳能电池需要在典型的p-导电CI(G)S-吸收剂和典型的n-导电前电极之间的缓冲层，其通常包含氧化锌(ZnO)。该缓冲层可以在吸收剂材料和前电极之间进行电子匹配。该缓冲层包含例如镉-硫化合物。将具有例如钼的后电极直接沉积到载体衬底上。
多个太阳能电池的电路被称作光伏模块或者太阳能模块。太阳能电池电路是通过已知的耐候结构来提供持久保护以免受环境影响。通常，将低铁钠钙玻璃和增附性聚合物膜连接到太阳能电池上来形成耐候性光伏模块。该光伏模块可以经由接线盒嵌入到多个光伏模块的电路中。经由已知的功率电子学(Leistungselektronik)将该光伏模块的电路连接到公用电网上或者独立的供电设备上。
光学透明的导电涂层例如诸如透明的导电氧化物(TCO，transparent conductive oxide)的产生通常必需在高温进行沉积例如溅射。但是，同时，高温需要昂贵的加热的溅射系统和昂贵的加工控制。对于这个问题的一种可能的解决方案是室温沉积，随后较高温度加热。
但是，在含氧气氛中的在升高温度加热导致了上面的TCO层另外的氧化。同时，这种氧化降低了该透明导电氧化物的电导率。为了降低氧化，可以施加另外的惰性层例如Si3N4。在TCO表面进一步结构化之前，必须剥离这种惰性层。惰性层的这种剥离使得必需另外的相当复杂的加工步骤。此外，该TCO层还可能由于剥离惰性层而被损坏。
EP1056136B1公开了一种用于太阳能电池的衬底，其包含至少一种玻璃片，第一和第二底涂膜，和导电膜。该第一底涂膜包含成分氧化锡，氧化钛，氧化铟或者氧化锌中的至少一种。
US2008/0314442A1公开了一种透明的衬底，具有由至少两层组成的光学透明电极。该第一透明的导电层包含未掺杂的矿物氧化物例如诸如氧化锡。与之相反，该第二透明的导电层包含掺杂的矿物氧化物。
US2009/0084439A1公开一种具有TCO层的太阳能电池。该太阳能电池包含由衬底，缓冲层，第一TCO层，多个硅层，第二TCO层和抗反射层制成的结构。
DE102007024986A1公开了温度稳定TCO层及其生产方法。该TCO层具有透明的和导电保护层，其允许更高的加工条件。该保护层优选包含非晶硅，并且在后者的加工过程中包括结晶硅。
US2007/0029186A1公开一种生产经涂覆的玻璃衬底的方法。该方法包含在室温将TCO膜沉积到玻璃衬底上，和将保护层沉积到TCO膜上。然后加热经涂覆的玻璃衬底。
本发明的目标是提供一种生产TCO涂覆的衬底的方法，其允许在低温进行定义的TCO沉积(透明的导电氧化物)和随后TCO表面结构化，而没有导电率的明显降低。
本发明的该目标是根据本发明，借助根据独立权利要求1的生产涂覆的减反射衬底的方法来完成的。优选的实施方案来自于从属权利要求。
本发明的目标另外借助根据其他的并列权利要求的涂覆的衬底和它的用途来完成的。
本发明的生产经涂覆衬底的方法包含，在第一步中，将层厚度为100nm-1000nm的TCO层沉积到玻璃衬底上。该TCO层优选是通过CVD(化学气相沉积)，CLD(化学液相沉积)和/或PVD(物理气相沉积)施加到玻璃衬底上的。该TCO层特别优选是通过溅射和/或磁控管溅射来施加到玻璃衬底上的。该施加优选在室温进行，并且该玻璃衬底优选除了由涂覆方法之外不进一步加热。在第二步中，沉积平均层厚度为0.5nm-5nm的惰性覆层，该覆层包含至少一种化合物Al2O3，SiO2，Si3N4和或它们的混合物。沉积如上所述优选是通过溅射来进行的；该惰性覆层是由分布在表面上的结晶中心开始形成的。这些结晶中心是由惰性覆层的局部累积(簇(Cluster))来形成的。从这些局部累积开始，该惰性覆层在TCO层上生长。因为该惰性覆层仅仅施涂到0.5nm-5nm平均层厚度，因此该惰性覆层不是在整个TCO层上均匀分布的，而代之以形成层厚度为0.5nm-5nm的区域和所述簇之外的区域，其不具有惰性覆层或者具有小于0.5nm的惰性覆层。在下面的步骤中，将经涂覆的衬底在550℃-800℃加热和/或调温，然后在酸中蚀刻。该蚀刻是通过喷雾和/或浸入来进行的；该衬底优选完全浸入到酸中。在蚀刻之前不除去或剥离该惰性覆层。
该加热和/或调温优选进行30s-240s。在本发明上下文中，术语“调温”描述了在恒定温度的加热或者保持。
该加热优选在含氧气氛中进行，该气氛具有至少10vol%的O2，优选至少15 vol%的O2。
TCO层和/或惰性覆层的沉积优选是借助PVD(物理气相沉积)或者CVD(化学气相沉积)，特别优选借助溅射和特别优选借助阴极溅射和/或磁控管溅射来进行。该沉积优选室温进行。
该惰性覆层优选以1nm-4nm的层厚度沉积。
该蚀刻优选用无机和/或有机酸，特别优选HF，H2SiF6，(SiO2)m*nH2O，HCl，H2SO4，H3PO4，HNO3，CF3COOH，CCl3COOH，HCOOH，CH3COOH，和/或它们的混合物来进行。
此外，本发明包含经涂覆的衬底。经涂覆的衬底包含优选玻璃或者聚合物。将层厚度为100nm-1000nm的TCO层施涂到该衬底上。优选将厚度为30nm-100nm的由Si3N4，SiO2和/或Al2O3制成的扩散阻挡层施加到该玻璃衬底和TCO层之间。将该TCO层在背离衬底的一面上用平均层厚度为0.5nm-5nm的含有Al2O3，SiO2，Si3N4和/或它们的混合物的惰性涂层覆盖。该惰性覆层优选覆盖了TCO层的20%-80%表面。在本发明上下文中，术语“覆盖”针对的是层厚度>0.5nm的惰性覆层区域。该惰性覆层在生产过程中保护了TCO层免于氧化，和同时充当了抗反射层(这是借助具有惰性覆层的区域和在TCO层表面上不具有惰性覆层的区域的顺序来实现的)。
该TCO层优选包含锡掺杂的氧化铟(ITO)，铝掺杂的氧化锌(AZO)，氟掺杂的氧化锡(FTO，SnO2：F)，锑掺杂的氧化锡(ATO，SnO2：Sb)，铝，锌，铟，镓，银，金，锡，钨，铜，镉，铌，锶，硅，锌，硒，和/或它们的混合物或者合金。
该惰性覆层优选的平均层厚度是2nm-4nm。
该惰性覆层优选包含硅，碳，锗，Si3N4和/或它们的混合物。
该衬底优选包含平板玻璃(浮法玻璃)，石英玻璃，硼硅酸盐玻璃，钠钙玻璃和/或它们的复合体。
该TCO层的表面电阻优选<20Ω/平方，更优选<15 Ω/平方，特别优选<10Ω/平方。
此外，本发明包括经涂覆的衬底的用途，其用于在太阳能电池和/或显示器中，优选薄膜太阳能电池中，充当具有高的光学透明度和导电率的接触电极。
在下面，本发明参考附图以及实施例和对比例来详细解释。附图纯粹是示意性的，并非按比例尺精确的。该附图绝非限制本发明。
其中：
图1示出了现有技术的经涂覆衬底的横截面，和
图2示出了本发明衬底的横截面。
图1表示了现有技术的涂覆衬底的横截面。TCO层(2)位于由玻璃或者聚合物制成的衬底(1)上。该TCO层(2)被惰性覆层(3)所覆盖。
图2表示了本发明衬底的横截面。TCO层(2)位于由玻璃或者聚合物制成的衬底(1)上。TCO层(2)被非包封性的惰性覆层(3)所覆盖。惰性覆层(4)不具有或者仅仅具有低的层厚的区域可用于使用酸或者碱的蚀刻过程中，并且与惰性覆层(3)一起充当了抗反射层。
在下面，本发明将参考实施例和对比例来详细解释。
生产了本发明的经涂覆的玻璃衬底(A)和现有技术的玻璃衬底(B)。沉积是通过例如US2007/0029186A1中所述的溅射来进行。根据本发明涂覆的玻璃衬底(A)具有下面的层结构：玻璃(3mm/(1)/Si3N4(50nm/扩散阻挡层)/铝掺杂的氧化锌(1000nm)(2)/Si3N4(2nm)(3)。现有技术的玻璃衬底(B)具有下面的层结构：玻璃(3mm)(1)/Si3N4(50nm)/铝掺杂的氧化锌(1000nm)(2)。玻璃衬底(A)和(B)二者在空气中在650℃加热75s。然后将冷却的玻璃衬底(A)和(B)在0.5重量%的HCl中浸渍75s，并且用蒸馏水冲洗。在玻璃衬底(A)和(B)二者情况下，测量了加热和酸处理之前的层电阻R V和之后的层电阻R N，并且测量了酸处理后的吸光率和雾度。结果表示在表1中。
表1：本发明的玻璃衬底(A)和现有技术的玻璃衬底(B)在加热之前的层电阻R V和之后的层电阻R N，吸光率和雾度。
从表1中可以看出，本发明的玻璃衬底(A)在加热和酸处理之后的层电阻R N与根据现有技术的玻璃衬底(B)（14%）相比明显降低(57%)。吸光率和雾度值基本保持不变，这样本发明的更薄的惰性覆层的TCO涂层的这些性能不变差。确切的说来，本发明的生产经涂覆玻璃衬底的方法使得层电阻明显降低。这些结果是令人惊讶的和非显而易见的。
附图标记：
1 玻璃衬底
2 TCO层
3 惰性覆层，和
4 不具有惰性覆层的区域。
Claims (13)
1.用于生产经涂覆的玻璃衬底的方法，其中
a.将TCO(薄导电氧化物)层(2)以100nm-1000nm的层厚度沉积到玻璃衬底(1)上，
b.将包含Al2O3、SiO2、Si3N4和/或它们的混合物的惰性覆层(3)以0.5nm-5nm的平均层厚度沉积到该TCO层(2)上，和
c.将该玻璃衬底(1)在550℃-800℃加热，然后在酸中蚀刻，其中在所述蚀刻之前不除去该惰性覆层。
2.根据权利要求1的方法，其中将该玻璃衬底(1)在具有至少10vol%O2、优选至少15 vol%O2的含氧气氛中加热。
3.根据权利要求1或2的方法，其中所述TCO层(2)和/或该惰性覆层(3)是借助PVD(物理气相沉积)或者CVD(化学气相沉积)，优选借助溅射，特别优选借助阴极溅射和磁控管溅射来沉积的。
4.根据权利要求1-3之一的方法，其中所述TCO层(2)和/或惰性覆层(3)是在室温沉积的。
5.根据权利要求1-4之一的方法，其中所述惰性覆层(3)以1nm-4nm的层厚度沉积。
6.根据权利要求1-5之一的方法，其中所述蚀刻是用无机和/或有机酸，优选用HF、H2SiF6、(SiO2)m*nH2O、HCl、H2SO4、H3PO4、HNO3、CF3COOH、CCl3COOH、HCOOH和/或 CH3COOH来进行的。
7.经涂覆的玻璃衬底，其至少包含：
a.玻璃衬底(1)，
b.在该玻璃衬底(1)上的层厚度为100nm-1000nm的TCO层(2)，和
c.在该TCO层(2)上的平均层厚度为0.5nm-5nm的包含Al2O3、SiO2、Si3N4和/或它们的混合物的惰性覆层(3)。
8.根据权利要求7的经涂覆的衬底，其中所述TCO层(2)包含锡掺杂的氧化铟(ITO)，铝掺杂的氧化锌(AZO)，氟掺杂的氧化锡(FTO，SnO2：F)，锑掺杂的氧化锡(ATO，SnO2：Sb)，和/或它们的混合物或者合金。
9.根据权利要求7或8之一的经涂覆的衬底，其中所述惰性覆层(3)的平均层厚度是1nm-4nm。
10.根据权利要求7-9之一的经涂覆的衬底，其中所述惰性覆层(3)覆盖了TCO层(2)20%-80%的表面。
11.根据权利要求7-10之一的经涂覆的衬底，其中所述玻璃衬底(1)包含平板玻璃(浮法玻璃)，石英玻璃，硼硅酸盐玻璃，钠钙玻璃和/或它们的复合体。
12.根据权利要求7-11之一的经涂覆的衬底，其中所述TCO层(2)的表面电阻<20Ω/平方，优选<15 Ω/平方，和特别优选<10Ω/平方。
13.根据权利要求7-12之一的经涂覆的衬底在太阳能电池，电致变色窗玻璃和/或显示器，优选在薄膜太阳能电池中的用途。
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| EP10153198A EP2354107A1 (de) | 2010-02-10 | 2010-02-10 | Verfahren zur Herstellung einer strukturierten TCO-Schutzschicht |
| EP10153198.6 | 2010-02-10 | ||
| PCT/EP2011/051772 WO2011098434A1 (de) | 2010-02-10 | 2011-02-08 | Verfahren zur herstellung einer strukturierten tco-schutzschicht |
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| CN103183480A (zh) * | 2011-12-28 | 2013-07-03 | 上海北玻玻璃技术工业有限公司 | Azo镀膜玻璃的制备方法 |
| FR3018801A1 (fr) * | 2014-03-19 | 2015-09-25 | Saint Gobain | Substrat verrier a couche electroconductrice et rugosite diminuee |
| FR3018802A1 (fr) * | 2014-03-19 | 2015-09-25 | Saint Gobain | Substrat verrier a couche electroconductrice et tendance diminuee a la delamination |
| KR101539907B1 (ko) * | 2015-01-22 | 2015-08-06 | 성균관대학교산학협력단 | 패턴화된 태양전지용 유리기판 제조방법 및 이를 이용한 박막태양전지 |
| EP3133649A1 (en) * | 2015-08-18 | 2017-02-22 | Saint-Gobain Performance Plastics Corporation | Flexible functionalized film |
| US20190040523A1 (en) * | 2017-08-04 | 2019-02-07 | Vitro Flat Glass, LLC | Method of Decreasing Sheet Resistance in an Article Coated with a Transparent Conductive Oxide |
| DE102019203696B4 (de) * | 2019-03-19 | 2022-02-24 | Albert-Ludwigs-Universität Freiburg | Transparente Mehrschichtanordnung und Herstellungsverfahren |
| WO2024053819A1 (ko) * | 2022-09-05 | 2024-03-14 | 삼성전자 주식회사 | 표면 처리용 조성물 및 이를 이용한 표면 처리 방법 |
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| US6436541B1 (en) * | 1998-04-07 | 2002-08-20 | Ppg Industries Ohio, Inc. | Conductive antireflective coatings and methods of producing same |
| JP3227449B2 (ja) | 1999-05-28 | 2001-11-12 | 日本板硝子株式会社 | 光電変換装置用基板とその製造方法、およびこれを用いた光電変換装置 |
| FR2811316B1 (fr) * | 2000-07-06 | 2003-01-10 | Saint Gobain | Substrat texture transparent et procedes pour l'obtenir |
| JP3229610B2 (ja) * | 2000-08-07 | 2001-11-19 | 株式会社半導体エネルギー研究所 | Ｉｔｏ電極の作製方法 |
| US20070029186A1 (en) | 2005-08-02 | 2007-02-08 | Alexey Krasnov | Method of thermally tempering coated article with transparent conductive oxide (TCO) coating using inorganic protective layer during tempering and product made using same |
| FR2891269B1 (fr) | 2005-09-23 | 2007-11-09 | Saint Gobain | Substrat transparent muni d'une electrode |
| US8470434B2 (en) * | 2007-01-15 | 2013-06-25 | Saint-Gobain Glass France | Glass substrate coated with layers having an improved mechanical strength |
| DE102007024986A1 (de) | 2007-05-28 | 2008-12-04 | Forschungszentrum Jülich GmbH | Temperaturstabile TCO-Schicht, Verfahren zur Herstellung und Anwendung |
| TWI371112B (en) | 2007-10-02 | 2012-08-21 | Univ Chang Gung | Solar energy photoelectric conversion apparatus |
| JP2009242128A (ja) * | 2008-03-28 | 2009-10-22 | Asahi Glass Co Ltd | 透明導電ガラス基板およびその製造方法 |
| US20110011828A1 (en) * | 2009-07-20 | 2011-01-20 | Applied Materials, Inc. | Organically modified etch chemistry for zno tco texturing |
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- 2011-02-08 JP JP2012552360A patent/JP2013522147A/ja active Pending
- 2011-02-08 CN CN2011800088464A patent/CN102741189A/zh active Pending
- 2011-02-08 US US13/513,184 patent/US20120295087A1/en not_active Abandoned
- 2011-02-08 KR KR1020127020161A patent/KR20120125269A/ko not_active Withdrawn
- 2011-02-08 EP EP11702457A patent/EP2534109A1/de not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008028141A1 (de) * | 2008-06-13 | 2009-12-17 | Audi Ag | Glasprodukt |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120125269A (ko) | 2012-11-14 |
| JP2013522147A (ja) | 2013-06-13 |
| EP2354107A1 (de) | 2011-08-10 |
| US20120295087A1 (en) | 2012-11-22 |
| WO2011098434A1 (de) | 2011-08-18 |
| EP2534109A1 (de) | 2012-12-19 |
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