Summary of the invention
The present invention seeks to: a kind of novel wide cut sun shading material is provided, and it possesses the performance of dim light shading, heat-insulation and heat-preservation simultaneously.
A kind of novel wide cut sun shading material, by base material film and on base material film the dielectric membranous layer of sequential aggradation, metallic diaphragm, dielectric membranous layer, doping VO successively
2Rete, dielectric membranous layer are formed.
A kind of novel wide cut sun shading material, by base material film and on base material film the doping VO of sequential aggradation successively
2Rete, dielectric membranous layer, metallic diaphragm, dielectric membranous layer are formed.
A kind of novel wide cut sun shading material is reached dielectric membranous layer, metallic diaphragm, dielectric membranous layer, metallic diaphragm, the doping VO that on base material film, deposits successively by base material film
2Rete, dielectric membranous layer are formed.
Wherein adjacent metal rete and dielectric film can only deposit once; Also can repeated deposition; I.e. repeated deposition after having deposited layer of metal rete, dielectric film is like the dielectric membranous layer of sequential aggradation, metallic diaphragm, dielectric membranous layer, metallic diaphragm, dielectric membranous layer, doping VO successively on base material film
2Rete, dielectric membranous layer; Sequential aggradation doping VO successively on base material film
2Rete, dielectric membranous layer, metallic diaphragm, dielectric membranous layer, metallic diaphragm, dielectric membranous layer; On base material film, deposit dielectric membranous layer, metallic diaphragm, dielectric membranous layer, metallic diaphragm, dielectric membranous layer, metallic diaphragm, doping VO successively
2Rete, dielectric membranous layer.Several retes of above-mentioned sequential aggradation successively are called 1 film layer group, can deposit one or more film layer group on the base material film.
Base material film is thickness 8um-100um, the flexible continuous coiled material of width 1000mm-2500mm, and material is selected from various plastic sheetings, like PET, EVA, PVC, PP, PE film etc.; Perhaps nonmetallic materials braid, like glass fabric, basalt fiber cloth, various synthetic fiber cloths etc.
The metal film material is selected from a kind of in silver, copper, gold, aluminium, nickel, zinc, molybdenum, titanium, chromium, tin, platinum, tungsten, palladium, vanadium, tantalum, the indium or any several kinds.The preferred silver of metal material, copper or nichrome, it is suitable for making the IR absorbing film of high performance-price ratio most.The thickness 5nm-250nm of every tunic, optimal deposition thickness 10nm-80nm.Metal level is used to absorb IR, and thicknesses of layers is thick more, and the infrared ray absorbing rate is high more.The metal film of 5nm-250nm different-thickness can make the light transmittance of light screening material from 12%---75%, and reflecting rate is from 5%---65%, and solar energy always partition rate is regulated between the 40%---85%.
The dielectric membranous layer material is selected from a kind of of metal oxide, metal sulfide, metal boride, carbonitride, metal nitride or any several kinds.The preferable alloy oxide is like zinc oxide, aluminium oxide, and titanium oxide, indium oxide, zirconia, tantalum oxide, metal nitride is like silicon nitride, aluminium nitride, titanium nitride, dielectric membranous layer optimal deposition thickness 2nm-200nm.The effect of dielectric layer is an antireflection part light, and can protect metal film, prevents its loss.
Doping VO
2Rete is a specified temp thermochromism blooming down of selecting for use doping metals and vanadium oxide material common deposited to obtain, the specific ir-absorbance of metal film generation of aforementioned fixation, doping VO
2Film changes ir-absorbance with serviceability temperature again under specific ir-absorbance.Doping metals is selected from gold, silver, tungsten, molybdenum, copper, aluminium or titanium, and the deposit thickness of every tunic is at 2nm-50nm.
The invention provides a kind of preparation method of novel wide cut sun shading material: with thickness 8um-100um; The flexible continuous coiled material of width 1000mm-2500mm is a base material; Get into continuously in the magnetic control sputtering device reative cell through guide roller is smooth, reative cell vacuumizes, and vacuum is not less than 2 * 10
-3Pa adopts vacuum coating technology on base material, to deposit each rete successively.
The base material deposited surface is towards held, and the impurity when preventing impurity or the deposition in the substrate surface gets in the deposited film, and helps physics and clean, and can effectively prevent granular impurity staining substrate surface.
So-called vacuum coating is put material to be coated exactly and is plated base material in vacuum chamber, adopts certain method to heat material to be coated, makes it evaporation or distillation, and flight is splashed to the technology of being condensed film forming by the plated substrate surface.Film forming has many good qualities under vacuum condition: atom, the molecule that can reduce evaporating materials are flying in the substrate process in the collision of molecule; Reduce bioactive molecule and the chemical reaction between evaporation source material in the gas (like oxidation etc.); And be reduced in the membrane process gas molecule and get in the film and become the amount of impurity, thereby provide rete density, purity, sedimentation rate and with the adhesive force of substrate.
Usually operating pressure is equal to or less than 10 in the vacuum coating requirement film forming room
-2Pa, the far away and exigent occasion of film quality then requires pressure lower for evaporation source and substrate distance.On depositional mode, mainly be divided into: evaporation coating, sputter coating and ion plating.Sputter coating wherein: can make the particle of the surface of solids obtain energy and the surface of overflowing during with the high-energy particle bombardment surface of solids, be deposited on the base material.Sputter coating does not receive the restriction of film material fusing point, but infusibility materials such as sputter W, Ta, C, Mo, WC, TiC.The sputter compound film can be used reactive sputtering, is about to reacting gas (O, N, HS, CH etc.) and adds in the Ar gas, and reacting gas and ion thereof and target atom or sputtered atom react and generate compound TiN, TiC, VO
2, SiO (like oxide, nitride, carbide etc.) and being deposited on the base material.
The present invention introduces vacuum coating technology deposits multiple material on the continuous optics film coil of wide cut composite nanostructure rete, and it is indoor that a part of solar energy is penetrated into, and the absorption portion infrared light reaches the purpose of shading dim light; And can change absorptivity to infrared light (VO when the environment temperature<Tc with variation of ambient temperature
2Film has high transmittance to infrared light, when environment temperature>Tc, then infrared light is had highly reflective, VO
2This optical property have the existing picture of modulation to claim thermochromism with temperature), the transmissivity of environment temperature IR in 20 ℃ of-80 ℃ of scopes will from 55% to 5% change can, basically no longer see through, reach heat-insulation and heat-preservation, purpose cool in summer and warm in winter with this.This film and other functional flexible material are carried out MULTILAYER COMPOSITE, manufacture with the compound sticking laminating technology safety energy-conserving environment protection multi-functional shading the roller shutter material or with optical adhesive it is affixed on the glass or other transmitting substrate that needs sunshade.The application of this multifunctional material on sun shading material still belongs to blank at present.
The specific embodiment
Below through the concrete elaboration of several kinds of sun shading material technologies preparation method of the present invention:
Nano-composite film is used in sunshade of the present invention shown in the accompanying drawing one, is by metal level and the dielectric layer of alternating deposit on base material, and thermic becomes the multilayer alternate thin films that the optical characteristics film constitutes.Dielectric layer deposition 1a and metal level 1b and 1c dielectric layer successively from bottom to top on substrate A, thermic become the optical characteristics layer VO that promptly mixes
2The sunshade rete of the five-layer structure that film 1d and dielectric layer 1f are constituted;
Second group of 2a of repeated deposition on the 1f in figure one, 2b, 2c; 2d; The sunshade rete of the five-layer structure that 2f forms. regulate the sunshade rete to the total partition rate of sunshine, light transmittance, reflecting rate and thermic change optical characteristics temperature spot through the five-layer structure layer that repeats the different numbers of plies.This rete coating process process is consulted (figure two)
Embodiment 1:Al
2O
3/ Ag/Al
2O
3/ VO
2.W/Al
2O
3Method for manufacturing thin film
With thickness is 8um; Width is that the optics PET film coiled strip of 1000mm is made backing material A; Through one group of smooth entering continuously in the magnetic control sputtering device reative cell of Tension Control guide roller 3a; The base material deposited surface is towards held, can effectively prevent granular impurity to the staining of substrate surface, and the reative cell vacuum is extracted into 2 * 10
-3Pa, the 5ms-a target position is a target with 99.99% aluminium oxide ceramics in figure two, with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent Al
2O
3Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2000W, and underlayer temperature is a normal temperature, carries out deposition growing.
Treat the transparent Al of ground floor
2O
3Layer thickness is after the 10nm deposition finishes, to be that target is placed on 5ms-b target position among the figure two with the Ag metal again, imports reative cell with pure Ar as sputter gas, adopts direct current reaction magnetron sputtering plated metal Ag layer.Gas pressure intensity is 1.0Pa, and sputtering power 1800W, underlayer temperature are normal temperature, carry out deposition growing.
After treating second layer metal Ag layer sputtering sedimentation 8nm thickness, be that target is installed in the 5ms-c target position with 99.99% aluminium oxide ceramics again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent Al
2O
3Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2600W, and underlayer temperature is a normal temperature, carries out deposition growing.Transparent Al
2O
3Layer thickness is 15nm, and thickness has the growth time decision, adopts the vibration film thickness monitoring to monitor in real time, and accurately measures with ellipsometer test.
Treat three-layer metal Al
2O
3Behind the layer sputtering sedimentation 15nm thickness, be that target is installed in the 6ms-a target position with 99.99% vanadium dioxide pottery again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent VO
2Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2800W, and underlayer temperature is a normal temperature, carries out deposition growing.Transparent VO
2Layer thickness is 10nm, simultaneously at 6ms-b target position Installation of W tungsten target. sputtering power is that 500W supplementary doping tungsten metal .6ms-c target position is installed Al
2O
3Target technology is identical with the 6ms-a target position
Basic top at embodiment 1 film changes material structure, and all the other material structures and preparation method are with embodiment 1, and the light transmission index is following:
Table 1
Embodiment 2:TiN/VO
2.Mo/SiO
2/ Ag/Al
2O
3/ Ag/Al
2O
3The preparation method of film
With thickness is 25um; Width is that the optics eva film coiled strip of 1800mm is made backing material A; Through one group of smooth entering continuously in the magnetic control sputtering device reative cell of Tension Control guide roller 3a; The base material deposited surface is towards held, can effectively prevent granular impurity to the staining of substrate surface, and the reative cell vacuum is extracted into 2 * 10
-3Pa, the 5ms-a target position is target with the metal Ti in figure two, makes reacting gas confession ion gun entering reative cell with Ar as sputter gas and pure N2, adopts direct current reaction magnetron sputtering deposit transparent Ti layer.The flow-rate ratio Ar of sputter/increased response gas: N
2=1: 2, gas pressure intensity is 1.0Pa, and sputtering power is 2800W, and underlayer temperature is 80 degree, carries out the imitative gold deposition of titanium nitride.Simulating golden colour purity decision N
2Consumption.TiN is a kind of imitative golden film, as imitating gold decorating
After treating that the transparent titanium nitride film of ground floor deposition finishes, be that target is installed in the 5ms-b target position with 99.99% vanadium oxide pottery again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent VO
2Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 2, gas pressure intensity is 1.0Pa, and sputtering power is 2800W, and underlayer temperature is 80 ℃, carries out deposition growing.Transparent VO
2Layer thickness is 10nm, simultaneously at 5ms-c target position installing M o target. sputtering power is a 500W supplementary doping Mo metal.
Treat the transparent VO of the second layer
2After deposition finishes, be that target is installed in the 6ms-a target position with 99.99% silicon oxide ceramics again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent SiO
2Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 2.5, gas pressure intensity is 1.0Pa, and sputtering power is 2600W, and underlayer temperature is 80 ℃, carries out deposition growing.Transparent SiO
2Layer thickness is 15nm, growth.
Treat three-layer metal SiO
2Behind the layer sputtering sedimentation 15nm thickness, be that target is installed in the 6ms-b target position again with 99.99%Ag, import reative cell as sputter gas, adopt direct current reaction magnetron sputtering plated metal Ag layer with pure Ar.Gas pressure intensity is 1.0Pa, and sputtering power 1800W, underlayer temperature are normal temperature, carry out deposition growing.
After treating the 4th layer of metal A g layer sputtering sedimentation 9.2nm thickness, be that target is installed in the 6ms-c target position with 99.99% aluminium oxide ceramics again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent Al
2O
3Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2600W, and underlayer temperature is a normal temperature, carries out deposition growing.Transparent Al
2O
3Layer thickness is 15nm
Treat the transparent Al of layer 5
2O
3After layer deposition finishes, be that target is placed on 7ms-a target position among the figure two with the Ag metal again, import reative cell as sputter gas, adopt direct current reaction magnetron sputtering plated metal Ag layer with pure Ar.Gas pressure intensity is 1.0Pa, and sputtering power 1800W, underlayer temperature are normal temperature, carry out deposition growing.
After treating layer 6 metal A g layer sputtering sedimentation 9.2nm thickness, be that target is installed in the 7ms-b target position with 99.99% aluminium oxide ceramics again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent Al
2O
3Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 2, gas pressure intensity is 1.0Pa, and sputtering power is 2400W, and underlayer temperature is a normal temperature, carries out deposition growing.Transparent Al
2O
3Layer thickness is 15nm,
Thickness has the growth time decision, adopts the vibration film thickness monitoring to monitor in real time, and accurately measures with ellipsometer test.
The performance indications of transparent conductive film are following:
Table 2
Embodiment 3:ZnO/Ag/ZnO/VO
2.Cu/ZnO method for manufacturing thin film
With thickness is 100um; Width is that the glass fabric coiled strip of 2500mm is made backing material A; Through one group of smooth entering continuously in the magnetic control sputtering device reative cell of Tension Control guide roller 3a; The base material deposited surface is towards held, can effectively prevent granular impurity to the staining of substrate surface, and the reative cell vacuum is extracted into 2 * 10
-3Pa, the 5ms-a target position is a target with 99.99% aluminium oxide ceramics in figure two, with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent ZnO layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2000W, and underlayer temperature is 80 ℃, carries out deposition growing.
Treat that ground floor transparent ZnO layer thickness is after the 10nm deposition finishes, is that target is placed on 5ms-b target position among the figure two with the Ag metal again, import reative cell as sputter gas, adopt direct current reaction magnetron sputtering plated metal Ag layer with pure Ar.Gas pressure intensity is 1.0Pa, and sputtering power 1800W, underlayer temperature are 80 ℃, carry out deposition growing.
After treating second layer metal Ag layer sputtering sedimentation 8nm thickness, be that target is installed in the 5ms-c target position with 99.99% aluminium oxide ceramics again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent ZnO layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2600W, and underlayer temperature is 80 ℃, carries out deposition growing.The transparent ZnO layer thickness is 15nm, and thickness has the growth time decision, adopts the vibration film thickness monitoring to monitor in real time, and accurately measures with ellipsometer test.
After treating three-layer metal ZnO layer sputtering sedimentation 15nm thickness, be that target is installed in the 6ms-a target position with 99.99% vanadium dioxide pottery again, again with Ar as sputter gas and pure O
2Make assisting ion and strengthen gas input reative cell, adopt direct current reaction magnetron sputtering deposit transparent VO
2Layer.The flow-rate ratio Ar of sputter/increased response gas: O
2=1: 3, gas pressure intensity is 1.0Pa, and sputtering power is 2800W, and underlayer temperature is 80 ℃, carries out deposition growing.Transparent VO
2Layer thickness is 10nm, at the 6ms-b target position Cu target is installed simultaneously. sputtering power is that 500W supplementary doping copper metal .6ms-c target position installation ZnO target technology is identical with the 6ms-a target position
Performance indications such as table 3:
Table 3
Membrane structure |
Infrared average absorption rate (800-2500nm) |
Compare non-impurity-doped VO2 layer with embodiment 3 |
52.4% |
Embodiment 3 |
5.2%(80℃)---55.2%(20℃) |
The above-mentioned glass fabric that contains thermic change blooming can be widely used in building materials, and need heat preservation and insulation field such as pipeline make building materials, and pipe surface can intelligence absorb infrared light, accomplishes effect cool in summer and warm in winter
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.