CN102664146A - Method for eliminating load effect of multi sequence single deposition device - Google Patents
Method for eliminating load effect of multi sequence single deposition device Download PDFInfo
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- CN102664146A CN102664146A CN2012101703749A CN201210170374A CN102664146A CN 102664146 A CN102664146 A CN 102664146A CN 2012101703749 A CN2012101703749 A CN 2012101703749A CN 201210170374 A CN201210170374 A CN 201210170374A CN 102664146 A CN102664146 A CN 102664146A
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Abstract
The invention discloses a method for eliminating load effect of a multi sequence single deposition (MSSD) device. A device for eliminating the load effect of the MSSD device comprises a plurality of heaters. The method for eliminating the load effect of the MSSD device includes the following steps of providing a plurality of virtual wafers, placing the virtual wafers in the deposition device; during a depositing process of the deposition device, placing product wafers on all or part of the heaters, and meanwhile, placing the virtual wafers on the heaters without the product wafers; when the deposition device is cleaned, removing all the product wafers on the heaters, and placing the virtual wafers on all the heaters. By the aid of the method, the load effect of the MSSD device can be eliminated, frequent replacing for the virtual wafers placed in the deposition device is avoided, labor force and cost are saved, and simultaneously service life of the heaters is prolonged.
Description
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to a kind of method of eliminating multistation continous way depositing device load effect.
Background technology
Make the field at integrated circuit, depositing operation is one of necessary process steps.Wherein, and multistation continous way deposition (Multi Sequence Single Deposition, MSSD) method has higher working (machining) efficiency, and the depositing operation that therefore utilizes multistation continous way depositing device to carry out the product wafer has obtained the extensive use of industry.But in the production process of reality; Multistation continous way depositing device is before and after depositing operation initial stage, latter stage and periodic cleaning process; Because the residing microenvironment of product wafer is difference to some extent; Cause the characteristics such as thickness, stress, refraction index of the deposit film that depositing operation forms to have certain cyclic variation, this phenomenon is called load effect.
Fig. 1 is the brief configuration sketch map of the depositing device of available technology adopting multistation successive sedimentation mode; As shown in Figure 1; Be provided with several heating stations (Heater) in the reaction chamber of depositing device (Chamber) 100; Comprise first heating station 201, the second heating stations, 202, the three heating stations 203 and the 4th heating station 204 respectively.When product wafer (Product Wafer) entering reaction chamber 100 deposits; Each flake products wafer (among the figure indicate) deposits through first heating station 201, second heating station 202, the 3rd heating station 203 and the 4th heating station 204 successively clockwise, and deposition shifts out said reaction chamber 100 after finishing.But in actual production process; Particularly the converted products wafer just, before and after later stage and the cleaning process; Can run into the product wafer and can not take this four heating stations simultaneously, make the part heating station under the Light Condition of not placing the product wafer, carry out depositing operation, do not covered by the product wafer if having on the heating station; It is different when the electric capacity of reaction chamber 100 can be covered by the product wafer with heating station fully; Cause the power that distributes on each heating station to change, cause the change of the inner microenvironment of reaction chamber, thereby can the thickness and the performance of product wafer deposit film be exerted an influence.
In order to eliminate load effect, a kind of method of the prior art is before the deposited product wafer, deposits some warming-up wafers in advance, makes the product wafer when the entering reaction chamber deposits, and some warming-up wafers have been arranged in the reaction chamber.But this method be merely able to eliminate the converted products wafer just, the property of thin film difference on the number of products wafer in later stage; Can not solve at reaction chamber and regularly clean the difference of accomplishing forward and backward product wafer upper film character; And; This method need regularly replace the warming-up wafer, labor intensive and cost.
Other a kind of method is the sedimentation time of adjustment product wafer in the prior art; When the product wafer does not take all heating stations in the reaction chamber; Sedimentation time when the sedimentation time of product wafer takes the heating station situation with the product wafer is different, makes all product wafer deposit thickness consistent through the adjustment sedimentation time.But this method is merely able to adjust the thickness of institute's deposit film, but can not thoroughly solve the periodically variable problem of the characteristic such as stress, refraction index of film.
Therefore, need a kind of method of not wasting the warming-up wafer and can thoroughly solve load effect.
Summary of the invention
The objective of the invention is to microenvironment problem of unstable in the reaction chamber of multistation successive sedimentation equipment in the solution prior art, the stability of characteristics such as the thickness of raising product wafer film in depositing operation, stress, refraction index.
For solving the problems of the technologies described above; The present invention provides a kind of method of eliminating multistation continous way depositing device load effect; Be provided with some heating stations in the reaction chamber of said depositing device, said method comprises: some dummy wafer are provided, and said dummy wafer is positioned in the said depositing device; When utilizing said depositing device to carry out depositing operation, the product wafer is positioned on all or part of said heating station, when said product wafer is positioned on the said heating station of part, on the heating station of not placing the product wafer, place said dummy wafer; When said depositing device is carried out cleaning, shift out all product wafers on the said heating station, and on all heating stations, place said dummy wafer.
Further, the method for said elimination multistation continous way depositing device load effect, the quantity of said dummy wafer is more than or equal to the quantity of said heating station.
Further, the method for said elimination multistation continous way depositing device load effect, the quantity of said heating station is more than or equal to two.
Further, the method for said elimination multistation continous way depositing device load effect, when said dummy wafer was not positioned on the said heating station, said dummy wafer was positioned in the transfer chamber of said depositing device.
Further, the method for said elimination multistation continous way depositing device load effect, said depositing device is a chemical vapor depsotition equipment.
Further, the method for said elimination multistation continous way depositing device load effect, said depositing device is a plasma enhanced chemical vapor deposition equipment.
Further, the method for said elimination multistation continous way depositing device load effect, the size of the size of said dummy wafer and said product wafer is consistent.
Further, the method for said elimination multistation continous way depositing device load effect, the material of the material of said dummy wafer and said product wafer is consistent.
Further, the method for said elimination multistation continous way depositing device load effect, said dummy wafer is ceramic wafers, aluminium wafer or silicon wafer.
Further, the method for said elimination multistation continous way depositing device load effect, said ceramic wafers is silicon nitride wafer, silicon carbide wafer or nitrogenize thallium wafer.
Further, the method for said elimination multistation continous way depositing device load effect, the size of said dummy wafer is more than or equal to 8 cun.
In sum; Compared with prior art; The method of elimination multistation continous way depositing device load effect according to the invention is built in dummy wafer in the depositing device, when utilizing depositing device to carry out depositing operation through to improving on the depositing device that adopts multistation successive sedimentation mode; On the heating station of not placing the product wafer, place said dummy wafer; Make the microenvironment in the reaction chamber keep stable status, thereby make the characteristics such as thickness, stress and refraction index of the film that deposits on the product wafer keep stable, and then effectively avoided load effect.
And, when said depositing device is carried out cleaning, shift out in the depositing device reaction chamber all product wafers on the heating station; And on all heating stations, place said dummy wafer; The plasma that then is used for the cleaning reaction chamber can be removed the film of dummy wafer surface deposition in the lump, in the cleaning reaction chamber, dummy wafer is cleaned, and makes dummy wafer to reuse; Avoided practicing thrift manpower and cost to putting into the dummy wafer frequent change of equipment; Dummy wafer is arranged on the heating station simultaneously, can protect not subject plasma damage of heating station, thereby can prolong the useful life of heating station.
Description of drawings
Fig. 1 is the brief configuration sketch map of the depositing device of available technology adopting multistation successive sedimentation mode;
Fig. 2 is a flow chart of eliminating multistation continous way depositing device load effect method in one embodiment of the invention;
Fig. 3 is the brief configuration sketch map of multistation continous way depositing device in one embodiment of the invention;
Fig. 4 a～Fig. 4 d be in one embodiment of the invention depositing device at the position distribution sketch map that carries out after depositing operation initial stage and the cleaning process product wafer and dummy wafer in the reaction chamber;
The position distribution sketch map of depositing device product wafer in carrying out depositing operation interim response chamber in Fig. 5 one embodiment of the invention;
Fig. 6 a～Fig. 6 c be in one embodiment of the invention depositing device at the position distribution sketch map that carries out before depositing operation latter stage and the cleaning process product wafer and dummy wafer in the reaction chamber;
Fig. 7 is the distribution schematic diagram of dummy wafer in the reaction chamber in the cleaning process in one embodiment of the invention.
The 100-reaction chamber, 201-first heating station, 202-second heating station, 203-the 3rd heating station; 204-the 4th heating station, 300-transfer chamber, the 311-first flake products wafer, the 312-second flake products wafer; 313-the 3rd flake products wafer, 314-the 4th flake products wafer, 320-dummy wafer; 332-flake products wafer third from the bottom, 333-flake products wafer second from the bottom, 334-flake products wafer last.
Embodiment
To combine sketch map that the method for elimination multistation continous way depositing device load effect of the present invention is described in more detail below; The preferred embodiments of the present invention have wherein been represented; Should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as limitation of the present invention.
For clear, whole characteristics of practical embodiments are not described.In following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development possibly be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; A kind of method of eliminating multistation continous way depositing device load effect is provided,, on the heating station of not placing the product wafer, places said dummy wafer through when utilizing said depositing device to carry out depositing operation; Make the microenvironment in the reaction chamber keep stable status; When said depositing device is carried out cleaning, on all heating stations, place said dummy wafer, in the cleaning reaction chamber, dummy wafer is cleaned; Make dummy wafer to reuse; Thereby eliminate the periodically variable load effect of product wafer film characteristics that is deposited, avoid simultaneously the dummy wafer of putting into the depositing device reaction chamber is regularly replaced, and prolong the useful life of heating station.
Please refer to Fig. 2, Fig. 2 eliminates the method flow diagram of multistation continous way depositing device load effect for the present invention, and it comprises the steps:
Step S10 provides some dummy wafer (Dummy Wafer), and said dummy wafer is positioned in the said depositing device;
Step S11; When utilizing said depositing device to carry out depositing operation; Product wafer correspondence is positioned on all or part of said heating station, when said product wafer is positioned on the said heating station of part, on the heating station of not placing the product wafer, places said dummy wafer;
Step S12 when said depositing device is carried out cleaning, removes all product wafers on the said heating station, and on all heating stations, places said dummy wafer.
Wherein, in the use of depositing device, the processing step of said step S11 and S12 hockets, and promptly after carrying out depositing operation, regularly said depositing device is carried out cleaning.
As shown in Figure 3; It is the brief configuration sketch map of multistation continous way depositing device in one embodiment of the invention; Said depositing device is for adopting the chemical vapor deposition (CVD) equipment of multistation successive sedimentation mode; Select plasma enhanced chemical vapor deposition (PECVD) equipment in the chemical vapour deposition (CVD) in the present embodiment; The advantages such as stress that said plasma enhanced chemical vapor deposition equipment has low temperature, low pressure, high deposition rate and can control deposit film more often use multistation successive sedimentation mode that the product wafer is carried out depositing operation.Said plasma enhanced chemical vapor deposition equipment can be sent out the depositing device that (Novellus) produced for for example promise, and model is not limit.
Comprise some heating stations in the reaction chamber 100 of said depositing device, for realizing the multi-drop deposition process, the quantity of said heating station should be more than or equal to two; In order to guarantee that each heating station all can be covered by dummy wafer 320; The quantity of dummy wafer 320 should be more than or equal to the quantity of said heating station, and in the present embodiment, the quantity of said heating station is four; Comprise first heating station 201, second heating station 202, the 3rd heating station 203 and the 4th heating station 204; The quantity of said dummy wafer 320 is four, the quantity of other heating stations, for example six also within thought range of the present invention.
Said dummy wafer 320 can be aluminium wafer, silicon wafer or ceramic wafers etc., and wherein ceramic wafers can be for example silicon nitride wafer, silicon carbide wafer, nitrogenize thallium wafer etc.; What the size of said dummy wafer 320 was preferable is more than or equal to 8 cun, for example 12 cun; In preferred embodiment; Said dummy wafer 320 is consistent with the size of said product wafer; Can further keep the stable of microenvironment in the reaction chamber of depositing device; Close the getting final product of material of dummy wafer 320 and said product wafer can make microenvironment more stable when still consistent, reaches better beneficial effect.
Said dummy wafer 320 is positioned in the said depositing device; Particularly; When said illusory wafer 300 does not use, when promptly need not dummy wafer 320 and being positioned on the said heating station, dummy wafer 320 is deposited among the transfer chamber (Load Lock) 300 of said depositing device; When dummy wafer 320 needed to use, said dummy wafer 320 moved on the heating station unloaded in the reaction chamber 100.The laying method of said dummy wafer 320 in said transfer chamber 300 can be position distribution shown in Figure 3, other laying methods, and for example vertical placement side by side is also within thought range of the present invention.
When utilizing said depositing device to carry out depositing operation; Especially in the initial stage and the latter stage of depositing operation, the product wafer only is positioned on the said heating station of part, does not take all heating stations; Then on the heating station of not placing the product wafer, place said dummy wafer 300 this moment; In the mid-term of depositing operation, when all placing the product wafer on all heating stations, all dummy wafer is positioned in the transfer chamber 300.On the heating station of not placing the product wafer, substitute and place dummy wafer 320; Electric capacity in the reaction chamber 100 is consistent; The power that is distributed on each heating station is constant; So each flake products wafer all forms in deposition in identical microenvironment, make the characteristics such as thickness, stress and refraction index of the film that deposits on the product wafer keep stable, thereby effectively avoided load effect.
The course of work of said multistation continous way depositing device is specific as follows: like Fig. 4 a～Fig. 4 d; Its for depositing device in one embodiment of the invention carrying out depositing operation initial stage and cleaning process product wafer and illusory wafer position distribution schematic diagram in the reaction chamber afterwards, at the depositing operation initial stage, at first; Shown in Fig. 4 a; The first flake products wafer 311 is moved in the reaction chamber 100 of depositing device, be positioned on first heating station 201, three dummy wafer 320 get into reaction chamber 100 from transfer chamber shown in Figure 3 300 simultaneously; This moment is in reaction chamber 100; The first flake products wafer 311 is positioned at 201, three dummy wafer 320 of first heating station and lays respectively on second heating station 202, the 3rd heating station 203 and the 4th heating station 204, carries out depositing operation; Then, shown in Fig. 4 b, the dummy wafer 320 that is positioned on second heating station 202 is shifted out reaction chamber 100; The first product wafer 311 moves on second heating station 202 from first heating station 201; And with the second flake products wafer, 312 immigration reaction chambers 100, be positioned on first heating station 201, this moment is in reaction chamber 100; The first flake products wafer 311 is positioned at second heating station 202; The second flake products wafer 312 is positioned at 201, two dummy wafer 320 of first heating station and lays respectively on the 3rd heating station 203 and the 4th heating station 204, carries out depositing operation; Then, shown in Fig. 4 c, the dummy wafer 320 that is positioned on the 3rd heating station 203 is shifted out reaction chamber 100; The first product wafer 311 is moved on the 3rd heating station 203 from second heating station 202, the second product wafer 312 is moved on second heating station 202 from first heating station 201, and the 3rd flake products wafer 313 is moved into reaction chamber 100; Be positioned on first heating station 201; The first flake products wafer 311 in reaction chamber 100 was positioned at the 3rd heating station 203, the second flake products wafers 312 and was positioned at second heating station, 202, the three flake products wafers 313 and is positioned at first heating station 201 this moment; A slice dummy wafer 320 is positioned at the 4th heating station 204, carries out depositing operation; At last; Shown in Fig. 4 d; After all dummy wafer 320 were left reaction chamber 100, the first product wafers 311, the second product wafer 312 and the 3rd flake products wafer 313 and moved the position of heating station successively, the 4th flake products wafer 314 got into reaction chambers 100; Be positioned in first heating station 201, carry out depositing operation.
After this, as shown in Figure 5, it is the position distribution sketch map of depositing device product wafer in carrying out depositing operation interim response chamber, in the mid-term of depositing operation, takes all heating stations at the product wafer, and illusory wafer 320 all is positioned in the intermediate station 300.
Like Fig. 6 a～Fig. 6 c; It is carrying out depositing operation latter stage and the cleaning process position distribution sketch map of product wafer and dummy wafer in the reaction chamber before for depositing device in one embodiment of the invention, in depositing operation latter stage, at first; Fourth from the last flake products wafer (not indicating among the figure) leaves reaction chamber 100; A slice dummy wafer 320 gets into reaction chamber 100 simultaneously, and have three flake products wafers and a slice dummy wafer 320 in the reaction chamber this moment, like Fig. 6 a; Be that a slice dummy wafer 320 is positioned at first heating station, 201, three flake products wafers and lays respectively at second heating station 202, the 3rd heating station 203, the 4th heating station 204; Then; Flake products wafer 332 third from the bottom leaves reaction chamber; A slice dummy wafer 320 gets into reaction chamber simultaneously, and have two flake products wafers and two slice dummy wafer 320 in the reaction chamber this moment, like Fig. 6 b; Promptly two dummy wafer 320 are positioned at first heating station 201 and second heating station, 202, two flake products wafers lay respectively at the 3rd heating station 203 and the 4th heating station 204; Then; Flake products wafer 333 second from the bottom leaves reaction chamber; A slice dummy wafer 320 gets into reaction chamber 100 simultaneously, and have a flake products wafer and three slice dummy wafer 320 in the reaction chamber this moment, like Fig. 6 c; Three dummy wafer 320 lay respectively at first heating station 201, second heating station 202 and the 3rd heating station 203, one flake products wafers and are positioned at the 4th heating station 204; At last, along with last flake products wafer 334 leaves reaction chamber, all dummy wafer 320 in the reaction chamber 100 on the heating station are also left reaction chamber 100.
Referring to Fig. 7, it is the distribution schematic diagram of dummy wafer in the reaction chamber in the cleaning process in one embodiment of the invention.In cleaning process, four dummy wafer 320 cover on four heating stations.When reaction chamber 100 is cleaned; Feed plasma from reaction chamber 100 tops; This plasma can clean the inwall of reaction chamber 100, simultaneously four dummy wafer 320 on four heating stations is cleaned, and washes the film of deposition on the dummy wafer 320 simultaneously.Simultaneously, four dummy wafer 320 lay respectively on four heating stations, and when reaction chamber 100 tops fed plasma, four dummy wafer 320 retainings stoped plasma to contact with heating station on four heating stations, avoid the damage of plasma to heating station.
In sum; Compared with prior art; The method of elimination multistation continous way depositing device load effect according to the invention is built in dummy wafer in the depositing device, when utilizing depositing device to carry out depositing operation through to improving on the depositing device that adopts multistation successive sedimentation mode; On the heating station of not placing the product wafer, place said dummy wafer; Make the microenvironment in the reaction chamber keep stable status, thereby make the characteristics such as thickness, stress and refraction index of the film that deposits on the product wafer keep stable, and then effectively avoided load effect.
And, when said depositing device is carried out cleaning, shift out in the depositing device reaction chamber all product wafers on the heating station; And on all heating stations, place said dummy wafer; The plasma that then is used for the cleaning reaction chamber can be removed the film of dummy wafer surface deposition in the lump, in the cleaning reaction chamber, dummy wafer is cleaned, and makes dummy wafer to reuse; Avoided practicing thrift manpower and cost to putting into the dummy wafer frequent change of equipment; Dummy wafer is arranged on the heating station simultaneously, can protect not subject plasma damage of heating station, thereby can prolong the useful life of heating station.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. a method of eliminating multistation continous way depositing device load effect is provided with some heating stations in the reaction chamber of said depositing device, and said method comprises:
Some dummy wafer are provided, and said dummy wafer is positioned in the said depositing device;
When utilizing said depositing device to carry out depositing operation, the product wafer is positioned on all or part of said heating station, when said product wafer is positioned on the said heating station of part, on the heating station of not placing the product wafer, place said dummy wafer;
When said depositing device is carried out cleaning, shift out all product wafers on the said heating station, and on all heating stations, place said dummy wafer.
2. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that the quantity of said dummy wafer is more than or equal to the quantity of said heating station.
3. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that the quantity of said heating station is more than or equal to two.
4. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that when said dummy wafer was not positioned on the said heating station, said dummy wafer was positioned in the transfer chamber of said depositing device.
5. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that said depositing device is a chemical vapor depsotition equipment.
6. the method for elimination multistation continous way depositing device load effect as claimed in claim 5 is characterized in that said depositing device is a plasma enhanced chemical vapor deposition equipment.
7. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that the size of the size of said dummy wafer and said product wafer is consistent.
8. the method for elimination multistation continous way depositing device load effect as claimed in claim 1 is characterized in that the material of the material of said dummy wafer and said product wafer is consistent.
9. like the method for any described elimination multistation continous way depositing device load effect in the claim 1 to 8, it is characterized in that said dummy wafer is ceramic wafers, aluminium wafer or silicon wafer.
10. the method for elimination multistation continous way depositing device load effect as claimed in claim 9 is characterized in that, said ceramic wafers is silicon nitride wafer, silicon carbide wafer or nitrogenize thallium wafer.
11. the method like the described elimination multistation of claim 1 to 8 continous way depositing device load effect is characterized in that the size of said dummy wafer is more than or equal to 8 cun.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107858665A (en) * | 2017-11-13 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for preventing vapor deposition film-formation equipment slide plate |
| CN115029681A (en) * | 2021-03-03 | 2022-09-09 | 和舰芯片制造(苏州)股份有限公司 | Load effect degree characterization method during thin film deposition in LPCVD (low pressure chemical vapor deposition) process and deposition method |
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| CN1180926A (en) * | 1996-10-24 | 1998-05-06 | 三星电子株式会社 | Method of depositing films on semiconductor wafers using partial deposition and reloading techniques |
| CN101949008A (en) * | 2010-07-02 | 2011-01-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrier plate, method for performing deposition processing by using carrier plate, and plasma deposition processing equipment |
| CN102110593A (en) * | 2010-12-15 | 2011-06-29 | 无锡中微晶园电子有限公司 | Method for improving stability of polysilicon thin-film resistor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1180926A (en) * | 1996-10-24 | 1998-05-06 | 三星电子株式会社 | Method of depositing films on semiconductor wafers using partial deposition and reloading techniques |
| CN101949008A (en) * | 2010-07-02 | 2011-01-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrier plate, method for performing deposition processing by using carrier plate, and plasma deposition processing equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107858665A (en) * | 2017-11-13 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for preventing vapor deposition film-formation equipment slide plate |
| CN115029681A (en) * | 2021-03-03 | 2022-09-09 | 和舰芯片制造(苏州)股份有限公司 | Load effect degree characterization method during thin film deposition in LPCVD (low pressure chemical vapor deposition) process and deposition method |
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Application publication date: 20120912 |