CN102632452A - Polishing method for silicon wafer by utilizing water ring - Google Patents
Polishing method for silicon wafer by utilizing water ring Download PDFInfo
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- CN102632452A CN102632452A CN2012101225060A CN201210122506A CN102632452A CN 102632452 A CN102632452 A CN 102632452A CN 2012101225060 A CN2012101225060 A CN 2012101225060A CN 201210122506 A CN201210122506 A CN 201210122506A CN 102632452 A CN102632452 A CN 102632452A
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- hydrosphere
- silicon chip
- polishing method
- polishing
- plastic packaging
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Abstract
The invention relates to a polishing method for a silicon wafer by utilizing a water ring. The polishing method includes the following steps: manufacturing a pressing water ring; sticking the manufactured pressing water ring on a polishing head by utilizing a double-faced adhesive tape; and placing and polishing the silicon wafer. According to the polishing method, pressure is divided by utilizing a conduction effect of fluid inside the water ring, the polishing pressure on a polishing machine can be uniformly conducted to the silicon wafer so as to maintain the polishing stress at various points on the silicon wafer to be consistent in the polishing process and greatly improve the level of geometric parameters of a polishing surface.
Description
Technical field
The present invention relates to the silicon wafer polishing technical field, particularly relate to a kind of hydrosphere that utilizes and carry out silicon chip polishing method.
Background technology
The continuous increase of die size and reducing of characteristic line breadth, IC makes and uses large-diameter silicon wafer in a large number, and therefore the silicon wafer surface flatness being required will be strict day by day, because this is the key that realizes large scale integrated circuit three-dimensional structure.And in numerous planarization techniques, chemically mechanical polishing is unique planarization techniques that can obtain the leveling effect, and as the main means of present silicon chip ultraprecise leveling processing, the silicon chip that requires on the one hand to process reaches the nanoscale surface roughness; In order to improve the silicon chip utilization rate, increase chip output on the other hand, also require the whole silicon wafer surface to reach the submicron order surface precision.Reach above-mentioned these requirements, the chemically mechanical polishing head has crucial effects with respect to the motion of polishing disk to the machining accuracy that guarantees silicon chip.Although the speed of CMP technical development is very fast, theory and technical problem that it need solve are a lot, like the influence of burnishing parameters (like pressure, rotating speed, temperature etc.) to flatness.The excision speed type of the CMP process that provides according to the Preston model is:
R＝KP
λV
Wherein: R is the excision speed on each point surface, P
λBe each point pressure, V is the relative velocity of wafer and polishing pad, and K is a proportionality coefficient, can above-mentioned formula can know that the quality of finish of CMP and its pressure distribution are closely related.
Summary of the invention
Technical problem to be solved by this invention provides a kind of hydrosphere that utilizes and carries out silicon chip polishing method, makes that silicon chip can be evenly stressed in the process of polishing.
The technical solution adopted for the present invention to solve the technical problems is: provide a kind of hydrosphere that utilizes to carry out silicon chip polishing method, may further comprise the steps:
(1) makes the compacting hydrosphere;
(2) the compacting hydrosphere that utilizes double faced adhesive tape to make is attached on the rubbing head;
(3) place silicon chip, silicon chip is polished.
Said step (1) also comprises following substep:
(11) the soft curtain doubling of transparent PVC is placed, place for carrying out plastic packaging on the operations platform to become annular;
(12) after the soft curtain plastic packaging of PVC is annular, in annulus, inject pure water;
(13) after water filling finishes, will seal plastic packaging after waiting to seal drying.
The temperature that plastic packaging is shaped in the said step (11) is controlled at 150-300 ℃.
In annulus, inject the pure water of 200-500ml in the said step (12).
The temperature of sealing plastic packaging in the said step (13) is controlled at 30-100 ℃.
The thickness of the soft curtain of said PVC is at 0.1-0.5mm.
Beneficial effect
Owing to adopted above-mentioned technical scheme; The present invention compared with prior art has following advantage and good effect: the present invention adopts hydrosphere to substitute conventional pressure coil, utilizes the mobilization of liquid in the hydrosphere; Make each point get identical pressure, thereby improve silicon chip surface geometric parameter ability.
Description of drawings
Fig. 1 is a processing simulation sketch map of the present invention;
Fig. 2 is a compacting hydrosphere structural representation among the present invention.
The specific embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment of the present invention relates to a kind of hydrosphere that utilizes and carries out silicon chip polishing method, may further comprise the steps:
(1) hydrosphere 1 is suppressed in making, i.e. design compacting hydrosphere drawing according to the mould of drawing making that hydrosphere designs compacting hydrosphere, after the Mold Making completion, is installed in and carries out the plastic packaging shaping on the plastic packaging machine.Comprise following substep in this step:
(11) the soft curtain doubling of transparent PVC is placed, place for carrying out plastic packaging on the operations platform to be shaped, wherein, the temperature that plastic packaging is shaped is controlled at 150-300 ℃;
(12) after the soft curtain plastic packaging of PVC is annular, in annulus, inject the 200-500ml pure water;
(13) after water filling finishes, place a little time, will seal plastic packaging after waiting to seal drying, the temperature of sealing plastic packaging is controlled at 30-100 ℃, thereby forms structure as shown in Figure 2.
(2) the compacting hydrosphere 1 that utilizes double faced adhesive tape to make is attached on the rubbing head 2;
(3) place silicon chip 3, silicon chip 3 is polished, be about to silicon chip 3 and be positioned on the ceramic disk 4, and adopt 2 pairs of silicon chips 3 of rubbing head to polish, the processing simulation drawing of having placed behind the silicon chip 3 is as shown in Figure 1.
Be not difficult to find; The present invention utilizes the conduction dividing potential drop of hydrosphere internal flow; Polish pressure on the polishing machine can be transmitted on the silicon chip more uniformly, keep silicon chip stressed unanimity of the polishing of each point in polishing process, significantly improved polished surface geometric parameter level.The compacting hydrosphere adopts the soft curtain of withstand voltage PVC to process among the present invention, and shape forms according to drawing design plastic packaging, and the fabrication and processing flow process is quite simple and easy; Contrast conventional pressure coil, the cost advantage of hydrosphere is big.
Claims (6)
1. one kind is utilized hydrosphere to carry out silicon chip polishing method, it is characterized in that, may further comprise the steps:
(1) makes the compacting hydrosphere;
(2) the compacting hydrosphere that utilizes double faced adhesive tape to make is attached on the rubbing head;
(3) place silicon chip, silicon chip is polished.
2. the hydrosphere that utilizes according to claim 1 carries out silicon chip polishing method, it is characterized in that, said step (1) also comprises following substep:
(11) the soft curtain doubling of transparent PVC is placed, place for carrying out plastic packaging on the operations platform to become annular;
(12) after the soft curtain plastic packaging of PVC is annular, in annulus, inject pure water;
(13) after water filling finishes, will seal plastic packaging after waiting to seal drying.
3. the hydrosphere that utilizes according to claim 2 carries out silicon chip polishing method, it is characterized in that, the temperature that plastic packaging is shaped in the said step (11) is controlled at 150-300 ℃.
4. the hydrosphere that utilizes according to claim 2 carries out silicon chip polishing method, it is characterized in that, in annulus, injects the pure water of 200-500ml in the said step (12).
5. the hydrosphere that utilizes according to claim 2 carries out silicon chip polishing method, it is characterized in that, the temperature of sealing plastic packaging in the said step (13) is controlled at 30-100 ℃.
6. the hydrosphere that utilizes according to claim 2 carries out silicon chip polishing method, it is characterized in that, the thickness of the soft curtain of said PVC is at 0.1-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101225060A CN102632452A (en) | 2012-04-24 | 2012-04-24 | Polishing method for silicon wafer by utilizing water ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101225060A CN102632452A (en) | 2012-04-24 | 2012-04-24 | Polishing method for silicon wafer by utilizing water ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102632452A true CN102632452A (en) | 2012-08-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101225060A Pending CN102632452A (en) | 2012-04-24 | 2012-04-24 | Polishing method for silicon wafer by utilizing water ring |
Country Status (1)
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| CN (1) | CN102632452A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10113862A (en) * | 1996-10-11 | 1998-05-06 | Sony Corp | Polishing method of thin plate type substrate and polising device for it |
| US20030029841A1 (en) * | 2001-07-11 | 2003-02-13 | Applied Materials, Inc. | Method and apparatus for polishing metal and dielectric substrates |
| CN1481295A (en) * | 2000-12-21 | 2004-03-10 | ��ķ�о�����˾ | Polishing platen with pressurized membrane |
| CN1981992A (en) * | 2005-12-15 | 2007-06-20 | 上海华虹Nec电子有限公司 | Method for automatically adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
| JP2007266299A (en) * | 2006-03-28 | 2007-10-11 | Tokyo Seimitsu Co Ltd | Wafer-polishing apparatus and method |
| CN101444897A (en) * | 2007-11-29 | 2009-06-03 | 株式会社荏原制作所 | Polishing apparatus and method |
-
2012
- 2012-04-24 CN CN2012101225060A patent/CN102632452A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10113862A (en) * | 1996-10-11 | 1998-05-06 | Sony Corp | Polishing method of thin plate type substrate and polising device for it |
| CN1481295A (en) * | 2000-12-21 | 2004-03-10 | ��ķ�о�����˾ | Polishing platen with pressurized membrane |
| US20030029841A1 (en) * | 2001-07-11 | 2003-02-13 | Applied Materials, Inc. | Method and apparatus for polishing metal and dielectric substrates |
| CN1981992A (en) * | 2005-12-15 | 2007-06-20 | 上海华虹Nec电子有限公司 | Method for automatically adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
| JP2007266299A (en) * | 2006-03-28 | 2007-10-11 | Tokyo Seimitsu Co Ltd | Wafer-polishing apparatus and method |
| CN101444897A (en) * | 2007-11-29 | 2009-06-03 | 株式会社荏原制作所 | Polishing apparatus and method |
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Application publication date: 20120815 |