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CN102623618A - 双打反线弧式led封装结构及其封装工艺 - Google Patents

双打反线弧式led封装结构及其封装工艺 Download PDF

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Publication number
CN102623618A
CN102623618A CN2012101067620A CN201210106762A CN102623618A CN 102623618 A CN102623618 A CN 102623618A CN 2012101067620 A CN2012101067620 A CN 2012101067620A CN 201210106762 A CN201210106762 A CN 201210106762A CN 102623618 A CN102623618 A CN 102623618A
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Prior art keywords
metal ball
lead
welding
led
bank
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李漫铁
王绍芳
孟牧
冯珍
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Ledman Optoelectronic Co Ltd
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Ledman Optoelectronic Co Ltd
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Priority to CN2012101067620A priority Critical patent/CN102623618A/zh
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Abstract

本发明提供了一种双打反线弧式LED封装结构及其封装工艺，通过采用晶片电极及基板侧分别设置第一、第二、第三金属球及第一、第二导线连接的结构，从而将基材上的薄弱受力点转移到晶片上，同时在基材的焊点上再加焊一条小线弧，进一步增强了基材上的薄弱受力点与金属的结合力，提高了产品的可靠性。

Description

双打反线弧式LED封装结构及其封装工艺
技术领域
本发明涉及一种LED结构及制造工艺，尤其是指一种双打反线弧式LED封装结构及其封装工艺。
背景技术
LED作为一种新型光源，以及它的低耗能无污染，体积小使用方便灵活等优点，被广泛用于建筑、太阳能路灯、手电筒、汽车灯、台灯、背光源、显示屏、射灯、庭院、壁灯、家居的小面积装饰照明，以及集装饰与广告为一体的商业照明。
但限于其结构及封装工艺，现有LED发光芯片在应用过程中仍然面临着失效的困拢，究其原因主要在于封装后的晶片结构的连接导线易因无法承受内部应力，出现断线、脱点，造成死灯失效，最终导致使用寿命的缩短，无法满足客户要求的同时也不利于环保节能型的推广，特别是在户外应用过程中此类问题尤为严重，可以说从很大程度上对LED灯使用形成了局限。
发明内容
本发明的目的在于克服了上述缺陷，提供一种导线结合力强可靠性高的双打反线弧式LED封装结构及其封装工艺。
本发明的目的是这样实现的：一种双打反线弧式LED封装结构，它包括晶片及基材，所述晶片上设有晶片电极，其特征在于：它还包括第一导线、第二导线、第一金属球、第二金属球、第三金属球及线颈；所述第三金属球覆盖于晶片电极表面，所述第一金属球、第一金属球间隔设置于基材上；所述第一导线两端分别与第一金属球、第二金属球相焊接，于第一导线焊接第一金属球处形成有线颈；所述第二导线两端分别与第二金属球、第三金属球相焊接，于第二导线焊接第三金属球处形成有线颈；所述第一导线、第二导线于焊接第二金属球处形成有线颈；
上述结构中，所述第三金属球覆盖晶片电极表面80％-100％的区域；
上述结构中，所述第三金属球的高度不小于第三金属球的直径的50％。
本发明还涉及一种LED封装工艺，它包括步骤，
A)、在LED发光二极管芯片的晶片的电极上焊接第三金属球，所述第三金属球覆盖不超出晶片电极的区域；
所述步骤A中的第三金属球由金属导线通过高温烧熔，从而在末端形成金属球，再通过功率、压力、温度加剧金属分子的扩散运动，让金属球与晶片电极区域充分连接形成。
所述步骤A中，焊接的第三金属球的直径为晶片的电极的区域的80％-100；
所述步骤A中焊接的第三金属球的厚度不小于其直径的50％；
B)、在基材的焊接区域上分别间隔焊接第一金属球、第二金属球，将第一导线的一端与第一金属球焊接在一起，而后第一导线弯折成线弧，其另一端与第二金属球焊接；
C)、将第二导线的一端焊接在第二金属球上，而后第二导线弯折成线弧，其另一端与第三金属球焊接。
所述步骤C后还包括步骤，
D)、在第一导线焊接第三金属球处、第二导线焊接第一金属球处级第一导线和第二导线焊接第二金属球处均形成用于承接转换和保护的线颈。
本发明的有益效果在于提供了一种双打反线弧的LED焊接结构及封装方式，通过采用晶片电极及基板侧分别设置第一、第二、第三金属球及第一、第二导线连接的结构，从而将基材上的薄弱受力点转移到晶片上，同时在基材的焊点上再加焊一条小线弧，进一步增强了基材上的薄弱受力点与金属的结合力，提高了产品的可靠性。
附图说明
下面结合附图详述本发明的具体结构
图1为本发明的整体结构示意图；
图2为本发明的芯片部分结构示意图；
图3为本发明的第二金属球部分结构示意图；
图4为本发明的第一金属球部分结构示意图；
图5为现有技术外尺寸示意图；
图6为本发明的外尺寸示意图。
1-晶片；2-晶片电极；3-第三金属球；4-基材；5-第一金属球；6-第一导线；7-第二金属球；8-第二导线。
具体实施方式
为详细说明本发明的技术内容、构造特征、所实现目的及效果，以下结合实施方式并配合附图详予说明。
请参阅图1-4，本发明一种双打反线弧式LED封装结构，它包括晶片1、基材4、第一导线6、第二导线8、第一金属球5、第二金属球7、第三金属球3及线颈。
晶片1上表面设有晶片电极2，其中，第三金属球3覆盖于晶片电极2表面，较佳的第三金属球3应当不超出晶片电极2表面，最佳的第三金属球3覆盖晶片电极2表面80％-100％的区域，即图1-4中的R1与R2的关系：80％≤R1/R2≤100％。此外，通过控制该第三金属球3的厚度H1可确保焊接质量，最佳的H1要求如下：50％≤H1/R1，即第三金属球3的高度不小于第三金属球3的直径的50％。此处结构中增加第三金属球3可以保证焊接时不直接焊接在晶片电极2上，避免造成短路或漏电。
上述的第一金属球5、第二金属球7间隔设置于基材4上。然后，所述第一导线6两端分别与第一金属球5、第二金属球7相焊接，第一导线6在焊接第一金属球5处形成有线颈。而所述第二导线8两端分别与第二金属球7、第三金属球3相焊接，于第二导线8焊接第三金属球3处形成有线颈。上述，第一导线6、第二导线8于焊接第二金属球7处同样形成有线颈。此处的，线颈起承接转换和保护作用，通过线颈和第一金属球、第二金属球、第三金属球使焊接薄弱上表面节点远离金属球所在表面的界面，因为界面为填充介质与基材的结合界面，通常填充介质为有基高分子化合物，而基材为无基金属材质，因此结合界面为应力最强区域。本发明中通过第一金属球、第二金属球、第三金属球和线颈拉开薄弱节点与界面的距离，有效避免和减少应力对薄弱节点的作用，起到提高产品的可靠性的作用。
为何生产符合上述结构的双打反线弧式LED封装，本发明还涉及一种LED封装工艺，它包括步骤，
A)、在LED发光二极管芯片的晶片的电极上焊接第三金属球，所述第三金属球覆盖不超出晶片电极的区域较佳的，焊接的第三金属球的直径为晶片的电极的区域的80％-100；增加第三金属球3可以保证焊接时不直接焊接在晶片电极上，避免造成短路或漏电。
较佳的，此处的第三金属球是通过高温烧熔，在金属线末端形成的金属球，再通过功率(此处的功率指的是物体单位时间内所做的功，功率越大，金属球越厚)、压力、温度加剧金属分子的扩散运动，让金属球与晶片电极区域充分连接，形成的，其厚度应当满足不小于其直径的50％，即50％≤H1/R1。
B)、在基材的焊接区域上分别间隔焊接第一金属球、第二金属球，将第一导线的一端与第一金属球焊接在一起，而后第一导线通过焊接工具弯折形成图1中的线弧，其另一端与第二金属球焊接。此处的线弧可起连接大线弧的作用，通过线弧的第二金属球7使焊接薄弱节点为金与金的结合，因金与金的结合力好与金与银的结合力。主要是通过线弧加强薄弱节点与基材4的焊接质量，有效避免和减少应力对薄弱节点的作用，起到提高产品的可靠性的作用。
C)、将第二导线的一端焊接在第二金属球上，而后第二导线8通过特定的焊接工具形成图1中的线弧，其另一端与第三金属球焊接。此处第二导线8的线弧起连接晶片与支架的作用，线弧直接在第二金属球上进行焊接，因金与金的结合力好于金与银的结合力，焊接时导线与支架的结合力更强更好弯折成线弧。
D)、在第一导线焊接第三金属球处、第二导线焊接第一金属球处级第一导线和第二导线焊接第二金属球处均形成用于承接转换和保护的线颈。
通过采用上述的封装工艺，产品的线弧整体高度H5比普通的焊接方法可以得到大幅度的降低，参见图5、6，降低高度约为晶片高度H2的2～5倍(H5-H6＞2*H2)，为实现超薄封装提供工艺可行性。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (8)

1.一种双打反线弧式LED封装结构，它包括晶片及基材，所述晶片上设有晶片电极，其特征在于：它还包括第一导线、第二导线、第一金属球、第二金属球、第三金属球及线颈；所述第三金属球覆盖于晶片电极表面，所述第一金属球、第一金属球间隔设置于基材上；所述第一导线两端分别与第一金属球、第二金属球相焊接，于第一导线焊接第一金属球处形成有线颈；所述第二导线两端分别与第二金属球、第三金属球相焊接，于第二导线焊接第三金属球处形成有线颈；所述第一导线、第二导线于焊接第二金属球处形成有线颈。
2.如权利要求1所述的双打反线弧式LED封装结构，其特征在于：所述第三金属球覆盖晶片电极表面80％-100％的区域。
3.如权利要求1或2所述的双打反线弧式LED封装结构，其特征在于：所述第三金属球的高度不小于第三金属球的直径的50％。
4.一种LED封装工艺，其特征在于：它包括步骤，
A)、在LED发光二极管芯片的晶片的电极上焊接第三金属球，所述第三金属球覆盖不超出晶片电极的区域；
B)、在基材的焊接区域上分别间隔焊接第一金属球、第二金属球，将第一导线的一端与第一金属球焊接在一起，而后第一导线弯折成线弧，其另一端与第二金属球焊接；
C)、将第二导线的一端焊接在第二金属球上，而后第二导线弯折成线弧，其另一端与第三金属球焊接。
5.如权利要求4所述的LED封装工艺，其特征在于：所述步骤C后还包括步骤，
D)、在第一导线焊接第三金属球处、第二导线焊接第一金属球处级第一导线和第二导线焊接第二金属球处均形成用于承接转换和保护的线颈。
6.如权利要求4或5所述的LED封装工艺，其特征在于：所述步骤A中的第三金属球由金属导线通过高温烧熔，从而在末端形成金属球，再通过功率、压力、温度加剧金属分子的扩散运动，让金属球与晶片电极区域充分连接形成。
7.如权利要求6所述的LED封装工艺，其特征在于：所述步骤A中，焊接的第三金属球的直径为晶片的电极的区域的80％-100％。
8.如权利要求6所述的LED封装工艺，其特征在于：所述步骤A中焊接的第三金属球的厚度不小于其直径的50％。
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