CN102593298A - Luminescent device - Google Patents
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- CN102593298A CN102593298A CN201210067680XA CN201210067680A CN102593298A CN 102593298 A CN102593298 A CN 102593298A CN 201210067680X A CN201210067680X A CN 201210067680XA CN 201210067680 A CN201210067680 A CN 201210067680A CN 102593298 A CN102593298 A CN 102593298A
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Abstract
The invention relates to a luminescent device. The luminescent device comprises a silicon substrate taking a crystal surface (100) as an upper surface. A groove is formed in the upper surface; one part of the groove is defined as a crystal surface of a silicon substrate (111). The luminescent device comprises a GaN crystal structure positioned on one crystal surface (111) of the silicon substrate; the GaN crystal structure comprises a non-polar plane and a first surface arranged along the non-polar plane; the luminescent device also comprises a luminous layer which is positioned on the first surface of the GaN crystal structure; and the luminous layer is provided with at least one GaN quantum well. According to the luminescent device disclosed by the invention, the non-polar and semi-polar GaN crystal surfaces are used as quantum substrates, so that the luminous efficiency and the light transmitting strength are improved; and in addition, transmitting light is highly polarized, very low defect density for the GaN crystal can be provided and further the reliability of the luminescent device is improved and the service life of the luminescent device is prolonged.
Description
Technical field
The present invention relates to a kind of for the luminescent device of solid state light emitter.
Background technology
Solid state light emitter, for example light-emitting diode (LED) and laser diode are compared with incandescent lamp or fluorescent lamp and to be had very large advantage.Higher and heat production is still less than the efficient of traditional incandescent lamp or fluorescent lamp usually for solid state light emitter.When Light-Emitting Diode (LED) or laser diode were placed in the red, green, blue element line, they can do white light source or colorful demonstration.Although solid luminescent has some advantage, traditional semiconductor structure that is used for solid luminescent and equipment price are relatively costly.The expensive part of Sony ericsson mobile comm ab is owing to its relative complex and production technology consuming time.
According to shown in Figure 1, a kind of LED structure 100 of prior art comprises substrate 105, for example a sapphire substrate.Resilient coating 110 is positioned on the substrate 105.Resilient coating 110 is mainly as a wetting layer, to promote the smooth and even covering of sapphire substrate.The thin noncrystalline layer that resilient coating 110 normally forms through Organometallic Chemistry steam precipitation (MOCVD) method.The III-V compounds of group layer 120 that has the n type to mix is positioned on the resilient coating 110.The III-V compounds of group layer 120 that the said n of having type mixes normally is made up of gallium nitride (GaN).The quantum well layer 130 of InGaN (InGaN) is positioned on the III-V compounds of group layer 120 that the doping of n type is arranged.An active III-V compounds of group layer 140 is formed on the quantum well layer 130 of InGaN (InGaN).The III-V compounds of group layer 150 that has the p type to mix is formed on the active III-V compounds of group layer 140.P electrode 160 (positive pole) is formed on the III-V compounds of group layer 150 of p type impurity.N electrode 170 (negative pole) is formed on the III-V compounds of group layer 120 of n type impurity.
The GaN crystal has different conductivity on the crystals with different direction.(0001) crystal face is perpendicular to the c axle, compares with other planes to have the highest electric polarity.(1-100) crystal face is nonpolar perpendicular to the m axle.Other GaN crystal faces, for example (1-101) all is semi-polar, its electric polarity is less than (0001) crystal face.
The different crystal faces of GaN crystal also have different optical properties.The internal quantum (IQE) of nonpolar (1-100) crystal face is the highest; And the semi-polarity crystal face, for example the quantum efficiency on (0001) plane is low slightly.The quantum efficiency of (0001) crystal face of polarity is minimum.In luminescent device, need produce from nonpolar or semi-polarity crystal face luminous, thereby obtain higher luminous intensity.
Early stage GaN LED goes up at sapphire, carborundum or spinelle substrate (105 among Fig. 1) and is shaped.Recently, attempt at LiAlO
2The GaN luminescent device that growth has nonpolar light-emitting area on the substrate.Although the emission of the light of these LED structures is spectrum-stable and polarization, because at LiAlO
2In the process of growing on the substrate, can produce a lot of flaws in the GaN crystal, its luminous intensity is lower.
Summary of the invention
The invention discloses a kind of luminescent device that utilizes nonpolar and semi-polarity GaN plane of crystal as the SQW substrate, its luminous efficiency and light emissive porwer increase than traditional G aN LED.The emission light of this luminescent device also is high degree of polarization, is very useful concerning a lot of displays.
Device disclosed by the invention also has some advantage, comprises to improve the reliability and the useful life of device for the GaN monocrystal provides low-down defect concentration; Can the different geomery of special one-tenth, to be fit to different application; And they can be assemblied on the silicon base, and are compatible with multiple microelectronic device.
On the one hand; The present invention relates to a kind of luminescent device; It comprises a silicon base and a GaN crystal structure that is positioned on (111) crystal face with (111) crystal face; Wherein said GaN crystal structure comprises a nonpolar plane, and one is parallel to the first surface of this nonpolar plane and is positioned at the luminescent layer on the first surface.This luminescent layer has at least one SQW that contains GaN.
On the other hand, the present invention relates to a kind of luminescent device, it comprises one with the silicon base of (100) crystal face as the silicon upper surface, offers a groove in the upper surface position, and the part of groove is defined as (111) crystal face of silicon base.The GaN crystal structure is positioned on (111) crystal face, and the GaN crystal structure has a nonpolar plane, and a first surface is parallel to this nonpolar plane.Be positioned at the luminescent layer on the first surface of GaN crystal structure, this luminescent layer has at least one SQW that contains GaN.
The device of these luminescent devices can comprise the one or more parts that are described below: first surface is basically perpendicular to (111) crystal face of silicon base.First surface is the border with a lateral edges of (111) crystal face of silicon base.First surface also is basically perpendicular to the m axle of GaN crystal structure (1-100) direction.The GaN crystal structure can also have a semi-polarity plane and a second surface that is parallel to this semi-polarity plane.The GaN crystal structure can comprise a polarity plane and the 3rd surface that is parallel to this polarity plane.The GaN crystal structure also can comprise a semi-polarity plane; With a second surface that is parallel to this nonpolar plane; Wherein the GaN crystal structure can comprise a polarity plane and the 3rd surface that is parallel to this polarity plane, and second surface is between first surface and the 3rd surface.First surface and second surface intersect intercepting each other with a certain angle between about 142 ° to about 162 °.Second surface and the 3rd surface intersect intercepting each other with a certain angle between about 108 ° to about 128 °.The GaN crystal structure can mix other materials and possess conductivity, also further comprises a upper electrode layer that is positioned on the luminescent layer in the luminescent device, and when electric field was applied to the luminescent layer between GaN crystal structure and the upper electrode layer, this luminescent layer was with luminous.Luminescent device can also further comprise one deck and be positioned at (111) crystal face of silicon base and the reflector between the GaN crystal structure.Luminescent device can also further comprise the resilient coating between (111) crystal face that is positioned at reflector and silicon base.Silicon base can also comprise the upper surface and the groove that is positioned at this upper surface that are positioned at (100) crystal face, and the part of this groove is restricted to (111) crystal face of silicon base.This groove can be elongate channel, inverted pyramid, or the shape of the inverted pyramid of brachymemma.SQW can be formed by InGaN and GaN.
In addition; On the one hand; The invention still further relates to a kind of luminescent device; It comprises a silicon base and a GaN crystal structure that is positioned on (111) crystal face with (111) crystal face, and wherein said GaN crystal structure comprises a first surface, and first plane parallel is in the semi-polarity plane of this GaN crystal structure; One second plane, second plane parallel is in the polarity plane of this GaN crystal structure; And luminescent layer, luminescent layer comprises and has the SQW that at least one contains InGaN/GaN or contains AlGaN/GaN, and SQW is positioned on the first surface of GaN crystal structure.
On the other hand, luminescent device comprises one and offers a groove with the silicon base of (100) crystal face as the silicon upper surface at this silicon upper surface, and the part of groove is defined as (111) crystal face.Also comprise the GaN crystal structure that is positioned on one of them (111) crystal face, it has first surface of the semi-polarity face that is parallel to this GaN crystal structure and along a second surface of the polar surface of this GaN crystal structure.At least have a luminescent layer that contains the InGaN SQW, be positioned on the first surface of GaN crystal structure.
The device of these luminescent devices can comprise the one or more parts that are described below.First surface can form the angle between 52 ° to 72 ° with respect to the m axle of GaN crystal structure.First surface can be basically parallel to (1-101) GaN crystal face.First surface can use (111) crystal face of angle and silicon base between 52 ° to 72 ° to intersect intercepting.Second surface can be basically parallel to (0001) GaN crystal face, and perpendicular to the c axle of GaN crystal structure.First surface and second surface can intersect intercepting each other with a certain angle between 108 ° to 128 °.
GaN crystal structure other materials that can mix, and as the lower electrode layer of luminescent layer.Luminescent device also comprises a upper electrode layer on luminescent layer, wherein said luminescent layer can be luminous when the electric field that applies passes between GaN crystal structure and the upper electrode layer.The GaN crystal structure can form the electrology characteristic of n type through mixing, and for example is to realize through doped silicon.This luminescent device can also further comprise (111) crystal face that is positioned at silicon base and one deck reflector between the GaN crystal structure.This reflector can comprise the AlGaN of silicon doping or the AlN of silicon doping.Luminescent device can also further comprise the resilient coating between (111) crystal face that is positioned at reflector and silicon base.Resilient coating can comprise the AlN of silicon doping.Silicon base also comprise (a 100) crystal face and one with this (100) crystal face as upper surface and be positioned at the groove on this upper surface, the part of this groove is defined as (111) crystal face.This groove can be groove, inverted pyramid, or the shape of the inverted pyramid of brachymemma.SQW can be by InGaN and GaN, and perhaps AlGaN and GaN form.
Description of drawings
Appended diagram is used for inventive principle is made an explanation with describing as the part that the bright specifically embodiment of the present invention is described.
Fig. 1 is the cross-sectional view of LED structure in the prior art.
Fig. 2 is the cross-sectional view of GaN luminescent device in one embodiment of the present of invention.
Fig. 3 is the graphic extension of the sandwich construction cross section of luminescent device shown in Figure 2.
Sectional view shown in Fig. 4 A and Fig. 4 B is described the growth of GaN crystal on Si shown in Figure 2 (111) crystal face in detail.
Fig. 5 A is the cross-sectional perspective view of luminescent device shown in Fig. 2, Fig. 3 and Fig. 4 B.
Fig. 5 B is the stereogram of the luminescent device shown in Fig. 5 A.
Fig. 6 A has described the light transmit direction of seeing from semi-polarity and polar GaN crystal face.
Fig. 6 B is in luminescence process, the photo of luminescent device shown in Fig. 2, Fig. 3 and Fig. 5 B.
Fig. 7 be formed at same suprabasil, will be with the luminescent device shown in Fig. 5 A and the 5B stereogram after similarly several luminescent devices are arranged.
Fig. 8 is the stereogram that has a kind of luminescent device of difformity size with luminescent device shown in Figure 7.
Fig. 9 be formed at same suprabasil, will be with luminescent device shown in Figure 8 stereogram after similarly several luminescent devices are arranged.
Figure 10 A describes the growth of GaN crystal in an alternative embodiment of the invention in detail to the sectional view shown in Figure 10 C.
Figure 11 is the cross-sectional view of GaN luminescent device in an alternative embodiment of the invention.
Figure 12 A is the cross-sectional perspective view of luminescent device shown in Figure 11.
Figure 12 B is the stereogram of the luminescent device shown in Figure 12 A.
Figure 13 be formed at same suprabasil, will be with the luminescent device shown in Figure 11, Figure 12 A and Figure 12 B stereogram after similarly several luminescent devices are arranged.
Figure 14 is the stereogram that has a kind of luminescent device of difformity size with luminescent device shown in Figure 11, Figure 12 A and Figure 12 B.
Figure 15 be formed at same suprabasil, will be with luminescent device shown in Figure 14 stereogram after similarly several luminescent devices are arranged.
In each accompanying drawing, similarly parts have used similar mark and numeral to represent.
Embodiment
With reference to figure 2; Luminescent device 200 comprises a silicon base 210; It has groove 220 that a upper surface that is positioned at (100) crystal face 201, one have at least a part to be restricted to (111) crystal face 202, be positioned at buffering and reflector 230 on the surface 202, one be positioned at the GaN crystal structure 240 that doping is arranged on buffering and the reflector 230, and luminescent layer; Luminescent layer further comprises and is positioned at the quantum well layer 250 that has on the GaN of the doping crystal structure 240, and one deck is positioned at the GaN layer 260 that doping is arranged on the quantum well layer 250.The GaN crystal structure 240 that doping arranged with have the GaN layer 260 of doping to have conductivity, can be respectively as the bottom electrode and the top electrode of quantum well layer 250.Be formed on an electrode layer 205 on the upper surface 201, electrically connect with the GaN layer that doping is arranged 260.
Buffering as shown in Figure 2 and reflector 230 are represented in Fig. 3.Referring to Fig. 3, these levels comprise one deck first resilient coating 231, one deck second resilient coating 232 and one deck reflector 235.Referring to Fig. 3 and table 1, first resilient coating 231 is also referred to as high temperature buffer layer, comprises the AlN of silicon doping.Thickness is first resilient coating 231 of 30nm, high temperature silicon doped with Al N, through between the down maintenance 15 minutes of the temperature between 1120 ℃ to 1170 ℃ and the pressure that is approximately 25mbar, deposits on (111) crystal face 202 of substrate 210 (as shown in Figure 2).In this course, the masked layer of (100) crystal face (that is, upper surface 201) blocks, thereby first resilient coating 231 of AlN only is deposited on (111) crystal face 202 of substrate 210, and can not deposit to the electrode 205 of below, zone.Second resilient coating 232 that 10nm is thick is also referred to as low temperature buffer layer, also comprises the AlN of silicon doping.Second resilient coating 232 deposits on first resilient coating 231 through under the pressure of 755 ℃ of these lower temperature and about 50mbar, keeping 5 minutes.The reflector 235 that 400nm is thick comprises the AlGaN that is doped with silicon, and it deposits on second resilient coating 232 through under the pressure of the temperature between 1220 ℃ to 1030 ℃ and about 25mbar, keeping 15 minutes.
In other some embodiment (not shown)s, also can the reflector be arranged between first resilient coating and the silicon base; Perhaps, reflector itself just can be played the effect of resilient coating simultaneously, does not then need to be provided with in addition independently first resilient coating or second resilient coating.In these embodiment, can through with above-mentioned similar method, come deposition of reflective layer (and resilient coating); The thickness of concrete deposition then can be set according to the application need of reality.
The material of different levels is formed and formation condition in table 1 luminescent device
The GaN crystal structure 240 that doping is arranged should (1-101) direction define a surface 241 that is parallel to (1-101) crystal face also along (1-101) direction self-sow.This surface 241 is in one on the angle between 52 ° to 72 ° with respect to the m axle of the GaN crystal structure 240 that doping is arranged, and for example is about 62 °.Has identical angle between surface 241 and (111) crystal face 202 of substrate 210.(1-100) direction is oppositely arranged with about identical angle with (1-101) direction.The surface 241 is semi-polar, and it has the lower electric polarity of specific surface 242.Surface 241 and surface 242 with an angle between 108 ° to 128 °, for example are 118 °, intersect each other.There is the GaN crystal structure 240 of doping also to comprise the surface 245 that is positioned at central area, groove 220 depths.Surface 245 direction depends in part on the deposited material of the quantum well layer 250 that in central area, groove 220 depths, uses.
GaN and InGaN layer that quantum well layer 250 comprises a plurality of (for example being eight) repeats to interlock, every layer has 20nm and 3nm thick respectively approximately.Quantum well layer 250 is greatly about 740 ℃ of temperature, and about 200mbar pressure forms down.Resilient coating 231 and 232 (Fig. 3) can reduce silicon (111) crystal face 202 and the mechanical tension between the GaN crystal structure 240 of doping is arranged, thereby makes that GaN crystal structure 240 epitaxial growth on (111) of silicon base 210 crystal face 202 of doping is arranged.Resilient coating 231 and 232 also can prevent breaking and separates in the quantum well layer 250, thus the luminous efficiency of raising luminescent device 200.The GaN layer 260 that 50nm is thick (that is, upper electrode layer), and be doped with for example Mg, through under 870 ℃ of temperature and 200mbar pressure, keeping 4 minutes (table 1), deposit to above the quantum well layer 250.
Resilient coating 231 and 232, reflector 235; And quantum well layer 250 can be through using ald (ALD), metallo-organic compound vapor deposition (MOCVD), plasma-reinforced chemical vapor deposition (PECVD), chemical vapour desposition (CVD), or physical vapor deposition methods such as (PVD) constitutes.GaN crystal structure 240 and the GaN layer 260 that doping is arranged that doping is arranged can pass through physical vapor deposition (PVD), plasma-reinforced chemical vapor deposition (PECVD) or chemical vapour desposition (CVD) deposition and form.
In optical transmission operation, to the GaN crystal structure 240 that includes doping respectively and have between the bottom electrode and top electrode of GaN layer 260 of doping, apply a voltage.Pass the electric current of quantum well layer 250, can cause reconfiguring of electronics and hole, thus luminous.
Fig. 4 A and Fig. 4 B have specified the growth that the GaN of doping crystal structure 240 is arranged.GaN crystal structure 240 is limited on semi-polarity surface 241 and 243 at first.The m axle (that is, (1-100) direction) that is used for confirming nonpolar plane is substantially parallel with the surface 202 of silicon base.During the GaN crystal growth, electric polarity surface 242 (as Fig. 4 Bs shown in) parallel with the m axle form at growth front (growth front).Surface 241 (111) crystal faces 202 with respect to silicon base are 62 ° of angles.GaN is higher than along the growth rate of m axle (1-100) direction along the growth rate of c axle (for example, in (0001) direction).GaN is higher than the growth rate along (1-101) direction along the growth rate of m axle (in (1-100) direction).
Stereogram among Fig. 5 A and Fig. 5 B has shown the details of luminescent device 200.With reference to Fig. 2, Fig. 5 B, Fig. 6 A and Fig. 6 B, groove 220 is inverted pyramid shape.Fig. 6 A has illustrated the light transmit direction from semi-polarity surface 241 and polar GaN plane of crystal 242.Fig. 6 B is during the light emission, the photo of above-mentioned luminescent device.The center of luminescent device is by an electrode end partial occlusion, and this electrode forms by forcing together each other with top electrode and contacts, so that the voltage that passes quantum well layer to be provided.The light that quantum well layer from semi-polarity surface 241 sends is better than the light that sends from the quantum well layer of polar surfaces 242; And, shown in Fig. 2 arrow, be the strongest from the light that the quantum well layer of apolar surfaces sends.It should be noted that in disclosed luminescent device the growth of groove and GaN structure is that the semi-polarity surface 241 of GaN structure is outwards exposed, thereby makes the illumination maximization from strong light-emitting area on main light emission direction.Therefore, the significant advantage of luminescent device disclosed herein is through on the semi-polarity surface of the GaN structure that doping is arranged, constituting light-emitting layer, higher intensity of illumination to be provided.
As shown in Figure 7, the arrangement of luminescent device 200A-200D can constitute in a common substrate 210.Among these luminescent devices 200A-200D each all has the analog structure shown in Fig. 2-5B.Can arrange for this, the ray structure with varying number is set, shown in Fig. 2-5B, to adapt to the needs of different luminous and display devices, for example, 2 * 1,2 * 2,3 * 2,3 * 3,4 * 4 etc.
Luminescent device can be made into different geomeries.The shape of the groove of silicon base can be the inverted pyramid shape of inverted pyramid shape or brachymemma, thereby provides one to be substantially foursquare luminescent device.The groove of silicon base can have long and narrow groove, and the luminescent device of a linear is provided.The light-emitting zone that a linear is arranged outside upper electrode layer 260 in the luminescent device 800 as shown in Figure 8.Long and narrow ditch at first is formed at substrate 210, then constitutes resilient coating, reflector, GaN structure, quantum well layer and the upper electrode layer of doping is arranged, to process with the identical step of above-mentioned luminescent device 200A-200D.In addition, a plurality of rectilinear luminescent device 800A-800D can be formed in the common substrate 210, and are as shown in Figure 9.
Also have an apolar surfaces in further embodiments, it is grown in the GaN structure, and is cut-off point with the edge of substrate.Shown in Figure 10 A, 10B and 10C, GaN crystal structure 240 is limited on semi-polarity surface 241 and 243 at first.The m axle (that is, (1-100) direction) that is used for confirming nonpolar plane is substantially parallel with the surface 202 of silicon base.At the growing period of GaN crystal structure 240, the electric polarity parallel with m axle surface 242 forms at growth front.Semi-polarity surface 241 (111) crystal faces 202 with respect to silicon base are 62 ° of angles.GaN is higher than along the growth rate of m axle (1-100) direction along the growth rate of c axle (for example, in (0001) direction).
Now please with reference to shown in Figure 10 C; In the process of GaN crystal structure 240 growths; Its surface 243 arrives a lateral edges 215 of silicon base 210, and these 215 places, edge that are grown in of GaN crystal structure are suppressed, and this moment, other crystalline materials then continued growth on surface 243.A new apolar surfaces 244 is formed between edge 215 and the semi-polarity surface 243.New surface 244 is the border perpendicular to m axle (for example being (1-100) crystallographic axis) and with edge 215, and the direction of its growth and m axle parallel.New surface 244 is basically perpendicular to the m axle of GaN crystal, also is basically perpendicular to (111) crystal face 202 of silicon base 210.New surface 244 is approximately 125 ° with the angle of (100) crystal face of silicon base 210.Upper surface 201 is positioned at (100) crystal face among Figure 11.Inclined surface in the groove is positioned at (111) crystal face.For the ease of checking, in Figure 10 A-10C, (111) crystal face is set at horizontal direction.
It should be noted that under unconfined environment of crystal growth apolar surfaces generally is not formed on growth front, this is because GaN is higher than the growth rate of edge (1-101) direction along the growth rate of m axle (that is, in (1-100) direction).Among the present invention for the concrete realization of apolar surfaces; At first be to form the marginal surface of GaN crystal structure up to its adjacent silicon substrate (111) crystal face, then the growing GaN crystal structure reaches the requirement of expection up to the size of said apolar surfaces and the formation of semi-polarity surface.
Use above-described technology, can make a kind of more improved luminescent device 900 shown in figure 11.Luminescent device 900 comprises a silicon base 210; The GaN crystal structure 240 that doping is arranged that it has groove 220 that a upper surface that is positioned at (100) crystal face 201, one have at least a part to be restricted to (111) crystal face 202, be positioned at buffering and reflector 230 on the surface 202, one is positioned on buffering and the reflector 230 reaches luminescent layer; Luminescent layer further comprises and is positioned at the quantum well layer 250 that has on the GaN of the doping crystal structure 240, and one deck is positioned at the GaN layer 260 that doping is arranged on the quantum well layer 250.The GaN crystal structure 240 that doping arranged with have the GaN layer 260 of doping to have conductivity, and can be respectively as the bottom electrode and the top electrode of quantum well layer 250.Be formed on an electrode layer 205 on the upper surface 201, electrically connect with the GaN layer that doping is arranged 260.
The GaN crystal structure 240 that doping is arranged should (1-101) direction define a surface 241 that is parallel to (1-101) crystal face also along (1-101) direction self-sow.The surface 241 is semi-polar, and it has the lower electric polarity of specific surface 242.Surface 241 and surface 242, an angle with between 108 ° to 128 ° for example is 118 °, and is arranged in a crossed manner.Referring to Fig. 5 A, there is the GaN crystal structure 240 of doping also to comprise the surface 245 that is positioned at central area, groove 220 depths.Surface 245 direction depends in part on the deposited material of the quantum well layer 250 that in central area, groove 220 depths, uses.
Shown in Figure 10 C, as indicated above, when growing into the edge 215 of (111) crystal face of silicon base 210 on surface 241, the crystal growth on semi-polarity surface is suppressed.In the growth course of GaN crystal structure 240, an apolar surfaces 244 is formed between edge 215 and the semi-polarity surface 241, and the crystal growth rate of this apolar surfaces 244 is higher than semi-polarity surface 241.Apolar surfaces 244 is not have electropolarly substantially, and the GaN crystal is grown along it, and apolar surfaces 244 is also perpendicular to m axle (1-100).Shown in figure 11, surface 241 and surface 244 for example are with 152 ° with a certain angle between 142 ° to 162 °, intercepting each other.Surface 244 is rectangular with respect to (111) crystal face 202 of substrate 210.
Then, GaN and InGaN layer that quantum well layer 250 comprises a plurality of (they for example being eight) repeats to interlock, and every layer has 20nm and 3nm thick respectively approximately.Shown in Fig. 3 and table 1, quantum well layer 250 is greatly about 740 ℃ of temperature, and about 200mbar pressure forms down.The GaN layer 260 that 50nm is thick (that is, upper electrode layer), and be doped with for example Mg, through under 870 ℃ of temperature and 200mbar pressure, keeping 4 minutes, deposit to above the quantum well layer 250.
Referring to Figure 11, in optical transmission operation,, apply a voltage that passes said upper/lower electrode to the GaN crystal structure that includes doping respectively 240 and bottom electrode and top electrode that the GaN layer 260 of doping is arranged.The electric current that passes quantum well layer 250 can cause reconfiguring of electronics and hole, thereby luminous.
Be the stereogram of luminescent device 900 shown in Figure 12 A and Figure 12 B.The GaN layer 260 that doping is arranged on the quantum well layer 250 comprises 261, one of light-emitting areas on semi-polarity surface 214 at the light-emitting area on the polar surfaces 242 262 and the light-emitting area 264 on apolar surfaces 244.The light that quantum well layer 250 from semi-polarity surface 241 sends is better than the light that the quantum well layer 250 from the polar surfaces 242 sends; And quantum well layer 250 emissions on the apolar surfaces 244 is only the strongest.And, lay respectively at the surface 264 and 261 on nonpolar and the semi-polarity surface 244,241, in Figure 12 A, 12B, be up, just along topmost light emission direction.It should be noted that; In disclosed luminescent device; The growth of groove and GaN structure is that the apolar surfaces of GaN structure and semi-polarity surface are outwards exposed on main light emission direction, thereby makes the illumination maximization from strong light-emitting area.Therefore, the significant advantage of luminescent device disclosed herein is, constitutes light-emitting layer on the apolar surfaces of the GaN structure through at doping being arranged and the semi-polarity surface, and higher intensity of illumination is provided.
Shown in figure 13, in the arrangement 1300 of luminescent device 900A-900D, described each luminescent device 900A-900D has the structure shown in Figure 12 B, and these luminescent devices 900A-900D can constitute in a common substrate 210.Can be for said arrangement 1300 be provided with the ray structure with varying number, to adapt to the needs of different luminous and display devices, for example, 2 * 1,2 * 2,3 * 2,3 * 3,4 * 4 etc.
Luminescent device can be made into different geomeries.The shape of the groove of silicon base can be the inverted pyramid shape of inverted pyramid shape or brachymemma, thereby provides one to be substantially foursquare luminescent device.The shape of the groove of silicon base can be a long and narrow groove shown in the sectional view of Figure 11, forms the luminescent device of a linear.Outside surface 261,262 and 264, form the light-emitting zone of a linear in the luminescent device 1400 shown in figure 14.Long and narrow groove at first is formed at substrate 210, then constitute resilient coating, reflector, GaN structure, quantum well layer and the upper electrode layer of doping arranged, with above-mentioned luminescent device 900, Figure 13 in the identical step of 900A-900D process.In addition, a plurality of rectilinear luminescent device 1400A-1400D can be formed in the common substrate 210, and are shown in figure 15.
Luminescent device disclosed by the invention has following one or more advantages.At first, through using of the substrate of nonpolar and semi-polar GaN crystal face, make luminous efficiency and luminous intensity and traditional G aN LED apparatus in comparison improve greatly as SQW.The light that this disclosed luminescent device sends also is high degree of polarization, and this is very useful concerning many display devices.Another advantage of this luminescent device is to reduce the intracrystalline defect concentration of GaN, thereby improves the reliability and the useful life of device.In addition, this disclosed luminescent device can be designed to different shapes to be applicable to distinct device.And this luminescent device can be welded on the silicon base, and this making with a lot of microelectronic devices is more compatible.
Description in the preceding text and diagram can be used as the explanation of the principle of the invention.Said device is configurable to be multiple shape and size, and scope of the present invention is not limited in the characteristics of optimum embodiment.Those skilled in the art can expect other multiple application of the present invention.Therefore, accurate structure, operation or size that the present invention is not limited to this locates disclosed specific embodiment or show here and describe.Or rather, all suitable modifications and equivalent construction all belong to protection scope of the present invention.For example, the GaN crystal structure can be that n mixes with there being one in the GaN layer 260 of doping, and another is that p mixes.Doping type in these two assemblies can be changed each other, and still compatible with luminescent device disclosed by the invention.Disclosed LED structure is applicable to the light that sends green, blueness and other colors.In addition, groove can have the shape different with above-mentioned instance.For example, the opening shape in the mask of upper surface can be difformities such as square or rectangular.In another example, the Silicon Wafer of (a 111) crystal face can be used as substrate, so that groove forms (100) crystal face in this substrate.
Claims (25)
1. a luminescent device is characterized in that, comprises:
Silicon base with (111) crystal face;
GaN crystal structure on (111) crystal face that is positioned at said silicon base, said GaN crystal structure has a nonpolar plane and is parallel to a first surface of this nonpolar plane;
And, being positioned at several luminescent layers on the said first surface, said luminescent layer has at least one SQW that comprises GaN.
2. luminescent device as claimed in claim 1 is characterized in that, said first surface is basically perpendicular to said (111) crystal face of silicon base.
3. luminescent device as claimed in claim 1 is characterized in that, said first surface is the border with a lateral edges of said (111) crystal face of silicon base.
4. luminescent device as claimed in claim 1 is characterized in that, said first surface is basically perpendicular to a m axle in the configuration of (1-100) of said GaN crystal structure direction.
5. luminescent device as claimed in claim 1 is characterized in that, said GaN crystal structure also comprises a semi-polarity plane and a second surface that is parallel to this semi-polarity plane.
6. luminescent device as claimed in claim 5 is characterized in that, said GaN crystal structure also comprises a polarity plane and the 3rd surface that is parallel to this polarity plane.
7. luminescent device as claimed in claim 6 is characterized in that, said second surface is between said first surface and the 3rd surface.
8. luminescent device as claimed in claim 7 is characterized in that, said first surface and second surface intersect intercepting each other with an angle between 142 ° to 162 °.
9. luminescent device as claimed in claim 7 is characterized in that, said second surface and the 3rd surface intersect intercepting each other with an angle between 108 ° to 128 °.
10. luminescent device as claimed in claim 1 is characterized in that, in the said GaN crystal structure doping is arranged, and said GaN crystal structure has conductivity;
Said luminescent device further comprises:
A upper electrode layer that is positioned on the said luminescent layer, said luminescent layer are between said GaN crystal structure and said upper electrode layer, and when being applied with the electric field that passes said luminescent layer, this luminescent layer is luminous.
11. luminescent device as claimed in claim 1 is characterized in that, said luminescent device further includes (111) crystal face that is positioned at said silicon base and the reflector between the said GaN crystal structure.
12. luminescent device as claimed in claim 11 is characterized in that, said luminescent device further includes the resilient coating between (111) crystal face that is positioned at said reflector and said silicon base.
13. luminescent device as claimed in claim 1 is characterized in that, said silicon base further comprises:
A upper surface that is positioned at (100) crystal face of this silicon base;
A groove that is formed at said upper surface, the part of said groove are restricted to said (111) crystal face of silicon base.
14. luminescent device as claimed in claim 13 is characterized in that, the shape of said groove is channel shaped, inverted pyramid shape, or the inverted pyramid shape of brachymemma.
15. luminescent device as claimed in claim 1 is characterized in that, said SQW comprises several InGaN layers and GaN layer.
16. a luminescent device is characterized in that, comprises:
A silicon base, it further comprises a upper surface that is positioned at (100) crystal face of said silicon base, and said upper surface has a groove, and the part of this groove is restricted to (111) crystal face of silicon base;
A GaN crystal structure is positioned on one of them said (111) crystal face, and said GaN crystal structure comprises a nonpolar plane and a first surface that is parallel to this nonpolar plane;
And, being positioned at several luminescent layers on the said first surface, said luminescent layer has at least one SQW that comprises GaN.
17. luminescent device as claimed in claim 16 is characterized in that, the shape of said groove is channel shaped, inverted pyramid shape, or the inverted pyramid shape of brachymemma.
18. luminescent device as claimed in claim 16 is characterized in that, said first surface is basically perpendicular to (111) crystal face of said silicon base.
19. luminescent device as claimed in claim 16 is characterized in that, said first surface is the border with a lateral edges of said (111) crystal face of silicon base.
20. luminescent device as claimed in claim 16 is characterized in that, said GaN crystal structure also comprises a semi-polarity plane and a second surface that is parallel to this semi-polarity plane; Said GaN crystal structure also comprises a polarity plane and the 3rd surface that is parallel to this polarity plane; Said second surface is between said first surface and the 3rd surface.
21. luminescent device as claimed in claim 20 is characterized in that, said first surface and second surface intersect intercepting each other with an angle between 142 ° to 162 °.
22. luminescent device as claimed in claim 20 is characterized in that, said second surface and the 3rd surface intersect intercepting each other with an angle between 108 ° to 128 °.
23. luminescent device as claimed in claim 16 is characterized in that, in the said GaN crystal structure doping is arranged, and said GaN crystal structure has conductivity;
Said luminescent device further comprises:
A upper electrode layer that is positioned on the said luminescent layer, said luminescent layer are between said GaN crystal structure and said upper electrode layer, and when being applied with the electric field that passes said luminescent layer, this luminescent layer is luminous.
24. luminescent device as claimed in claim 16 is characterized in that, said luminescent device further includes one of them (111) crystal face that is positioned at said silicon base and the reflector between the said GaN crystal structure.
25. luminescent device as claimed in claim 24 is characterized in that, said luminescent device further includes the resilient coating between one of them (111) crystal face that is positioned at said reflector and said silicon base.
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