CN102569191B - Manufacturing method of array substrate of semi-penetration and semi-reflection liquid crystal display - Google Patents
Manufacturing method of array substrate of semi-penetration and semi-reflection liquid crystal display Download PDFInfo
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- CN102569191B CN102569191B CN2012100567910A CN201210056791A CN102569191B CN 102569191 B CN102569191 B CN 102569191B CN 2012100567910 A CN2012100567910 A CN 2012100567910A CN 201210056791 A CN201210056791 A CN 201210056791A CN 102569191 B CN102569191 B CN 102569191B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Thin Film Transistor (AREA)
Abstract
The invention provides a manufacturing method of an array substrate of a semi-penetration semi-reflection liquid crystal display, including the following steps: step 1, providing a substrate; step 2, forming a transparent electrode layer on the substrate and forming a first metal layer on the transparent electrode layer; step 3, forming a grid electrode and a pixel electrode of preset patterns byadopting a first optical mask process, wherein the pixel electrode is formed by the transparent electrode layer and exposed and the grid electrode is formed by the transparent electrode layer and thefirst metal layer; step 4, forming an insulation layer on the grid electrode and the pixel electrode; step 5, forming a grid electrode insulation layer of a preset pattern on the insulation layer by adopting a second optical mask process; step 6, forming a semiconductor layer on the grid electrode insulation layer and forming a second metal layer on the semiconductor layer and the pixel electrode; and step 7, forming a channel layer of a preset pattern on the semiconductor layer by adopting a third optical mask process and forming a drain electrode, a source electrode and a reflection part ofpreset patterns on the second metal layer, so as to form a thin film transistor.
Description
Technical field
The present invention relates to field of liquid crystal display, relate in particular to a kind of manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display.
Background technology
Display is divided three classes generally with light source requirements in the market, penetrating LCD, reflective liquid-crystal display and semi-penetration semi-reflection liquid crystal display.Penetrating LCD is fit to use in the environment of weak light source, as in indoor use, and when outdoor application, when external light source is too powerful, can make the intensity of backlight be subjected to the interference of external light, and make when eyes are seen display and can think therefore that panel crosses brightly and unclear, have influence on image quality.And use backlight for a long time, make consumption of electric very big, and undersized display use powered battery usually, so occur not having very soon the situation of electricity easily.Reflective liquid-crystal display then is suitable for the powerful place of external light source, because a reflector is arranged in the structure, and can be emergency light reflex, frivolous and the power saving of this kind structure, but the place a little less than light source are lowered in the influence of external light source, the phenomenon of luminous intensity deficiency can occur, influence image quality.Transflective liquid crystal display has two kinds of different display modes, under environment with dark light, main by the perspective pattern, just utilize the backlight printing opacity liquid crystal panel of liquid crystal device self to show image, wait under the well-lighted situation in the sun, main by reflective-mode, namely utilize the reflective mirror in the liquid crystal panel that light from outside is reflected away, show image as light source successively, therefore transflective liquid crystal display is applicable to the external environment condition of various light intensities, especially have outstanding outdoor visual performance, and the brightness of backlight do not need very highly, have characteristics low in energy consumption.
Usually LCD is made up of a upper substrate, an infrabasal plate and the liquid crystal that is sandwiched between the two.Upper substrate is so-called color membrane substrates, generally includes public electrode and colored filter.Infrabasal plate is so-called array base palte, generally includes thin-film transistor (TFT) and pixel electrode.Color membrane substrates can be by the colored filter of light shield technology formation for several times.Array base palte typically uses 4 to 6 masks (Mask), through several steps repetition light shield making technologies such as thin film deposition, Mask exposure and etchings, form thin-film transistor and pixel electrode that matrix is arranged, the Mask that uses in the array base palte manufacture process is more many, corresponding operation is also more many, and then cause fraction defective height, cost to be difficult to control.
And the existing manufacture method of making the Transflective array base palte, general is to carry out other processing procedure again to form reflecting part after finishing thin-film transistor, makes processing procedure more complicated, cost is higher.
Summary of the invention
The object of the present invention is to provide a kind of manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display, its simplified array base palte procedure for producing, shortened the production time, reduced production costs.
For achieving the above object, the invention provides a kind of manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display, may further comprise the steps:
Step 1, provide substrate;
Step 4, form insulating barrier at grid and pixel electrode;
Step 7, form the channel layer of predetermined pattern and form drain electrode, source electrode and the reflecting part of predetermined pattern at second metal level at semiconductor layer by the 3rd road light shield processing procedure, form thin-film transistor, wherein, described drain electrode is electrically connected at described pixel electrode.
The described first road light shield processing procedure utilizes gray level mask or half gray level mask transparent electrode layer and the first metal layer to be exposed, develop, are etched with grid and the pixel electrode that forms predetermined pattern, described grid is positioned on the described substrate, formed by partially transparent electrode layer and the part the first metal layer be located on this partially transparent electrode layer, described pixel electrode separates setting with described grid, and this pixel electrode is formed by another part transparent electrode layer.
Described the 3rd road light shield processing procedure utilizes gray level mask or half gray level mask that semiconductor layer and second metal level are exposed, develop, are etched with channel layer, drain electrode, source electrode and the reflecting part that forms predetermined pattern, described channel layer is positioned on the described gate insulator, and part extends described pixel electrode, described drain electrode separates the two ends that are arranged at described channel layer with source electrode, this end that drains extends on the described pixel electrode along described channel layer, and described reflecting part is positioned on the described pixel electrode.
Described transparent electrode layer is indium tin oxide layer.
Also comprise after the described step 7, step 8, form planarization layer at thin-film transistor.
Planarization layer in the described step 8 is transparent insulating layer.
Described the first metal layer, second metal level, and transparent electrode layer form by sputter process respectively.
Described insulating barrier, semiconductor layer, and flatness layer form by chemical vapour deposition (CVD) respectively.
Beneficial effect of the present invention: the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention, only need three road light shield processing procedures just to finish the array base palte manufacturing of semi-transparent semi-reflecting LCD, simplify procedure for producing, shortened the production time, reduced production cost.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing, yet accompanying drawing only provide with reference to and the explanation usefulness, the present invention is limited.
Description of drawings
Below in conjunction with accompanying drawing, by the specific embodiment of the present invention is described in detail, will make technical scheme of the present invention and other beneficial effect apparent.
In the accompanying drawing,
Fig. 1 is the flow chart of the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention;
Fig. 2 to Fig. 6 is the structural representation of each fabrication stage of manufacturing method of array base plate one embodiment of semi-penetration semi-reflection liquid crystal display of the present invention;
Fig. 7 is another structural representation of the array base palte made by the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention.
Embodiment
For further setting forth technological means and the effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
See also Fig. 1 to Fig. 6, the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention may further comprise the steps:
Step 1, provide substrate 100, this substrate 100 is made by transparent material, is generally the substrate of glass substrate, quartz base plate or other suitable materials.
The described first road light shield processing procedure utilizes gray level mask or half gray level mask that transparent electrode layer 200 and the first metal layer 300 are exposed, develop, are etched with the grid 20 and pixel electrode 30 that forms predetermined pattern, described grid 20 is positioned on the described substrate 100, formed by partially transparent electrode layer 200 and the part the first metal layer 300 be located on this partially transparent electrode layer 200, described pixel electrode 30 separates setting with described grid 20, and this pixel electrode 30 is formed by another part transparent electrode layer 200.The embodiment of this first road light shield processing procedure can be at the first metal layer 300 covers one deck sensitization (photo-sensitive) material, be the photoresist layer, make light pass through gray level mask or half gray level mask then and shine on the photoresist layer with this photoresist layer exposure.Owing to have the pattern of active region on gray level mask or half gray level mask, to make part light be passed gray level mask or half gray level mask and shine on the photoresist layer, make the exposure of photoresist layer have selectivity, whereby the pattern on gray level mask or half gray level mask is intactly duplicated to the photoresist layer simultaneously.Then, utilize appropriate developer (developer) to remove the part photoresist, make the photoresist layer manifest needed pattern.Then, by etch process part the first metal layer 300 and partially transparent electrode layer 200 removed, this etch process can select for use Wet-type etching, dry-etching or both to be used.At last, the photoresist layer of remaining patterning is all removed, and then formed grid 20 and the pixel electrode 30 of predetermined pattern.
Step 4, form insulating barriers 400 (as shown in Figure 4) at grid 20 and pixel electrode 30, this insulating barrier 400 is crossed chemical vapour deposition (CVD) (Chemical vapor deposition, CVD) form, described insulating barrier 400 is generally oxide layer, but also can be nitration case, other suitable insulation material layers or the composite bed of aforementioned each insulating barrier.
Step 7, form the channel layer 50 of predetermined pattern and form drain electrode 60, source electrode 70 and the reflecting part 80 (as shown in Figure 6) of predetermined pattern at second metal level at semiconductor layer by the 3rd road light shield processing procedure, form thin-film transistor, wherein, described drain electrode 60 is electrically connected at described pixel electrode 30.
Described the 3rd road light shield processing procedure utilizes gray level mask or half gray level mask that semiconductor layer and second metal level are exposed, develop, are etched with channel layer 50, drain electrode 60, source electrode 70 and the reflecting part 80 that forms predetermined pattern, described channel layer 50 is positioned on the described gate insulator 40, and part extends described pixel electrode 30, described drain electrode 60 separates the two ends that are arranged at described channel layer 50 with source electrode 70, and, these 60 1 ends that drain extend on the described pixel electrode 30 along described channel layer 50, and then form a thin-film transistor.The 3rd road light shield processing procedure is identical with above-mentioned light shield processing procedure, it needs to be noted, when etch process, described channel layer 50 corresponding drain electrode 60 many etchings of part parts, make an end of described drain electrode 60 lose and support and extend on the described pixel electrode 30, and then make drain electrode 60 and pixel electrode 30 electrically connect.
See also Fig. 7, be the array base-plate structure schematic diagram of making by the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention, the difference of itself and above-mentioned processing procedure is, in above-mentioned steps 7, the 3rd road light shield processing procedure utilize gray level mask or half gray level mask to insulating barrier expose, development, etching, be located at fully on the channel layer 50 in the drain electrode 60 ' that semiconductor layer forms, this drain electrode 60 ' is electrically connected at pixel electrode 30 by channel layer 50.
In sum, the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display of the present invention only needs three road light shield processing procedures just to finish the array base palte manufacturing of semi-transparent semi-reflecting LCD, has simplified procedure for producing, has shortened the production time, has reduced production cost.
The above for the person of ordinary skill of the art, can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection range of claim of the present invention.
Claims (8)
1. the manufacturing method of array base plate of a semi-penetration semi-reflection liquid crystal display is characterized in that, may further comprise the steps:
Step 1, provide substrate;
Step 2, form transparent electrode layer, form the first metal layer at transparent electrode layer at substrate;
Step 3, by the first road light shield processing procedure to form grid and the pixel electrode of predetermined pattern, wherein, this pixel electrode is formed by transparent electrode layer and exposes, this grid is formed by transparent electrode layer and the first metal layer;
Step 4, form insulating barrier at grid and pixel electrode;
Step 5, form the gate insulator of predetermined pattern at above-mentioned insulating barrier by the second road light shield processing procedure;
Step 6, form semiconductor layer, form second metal level at semiconductor layer and pixel electrode at gate insulator;
Step 7, form the channel layer of predetermined pattern and form drain electrode, source electrode and the reflecting part of predetermined pattern at second metal level at semiconductor layer by the 3rd road light shield processing procedure, form thin-film transistor, wherein, described drain electrode is electrically connected at described pixel electrode.
2. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 1, it is characterized in that, the described first road light shield processing procedure utilizes gray level mask or half gray level mask transparent electrode layer and the first metal layer to be exposed, develop, are etched with grid and the pixel electrode that forms predetermined pattern, described grid is positioned on the described substrate, formed by partially transparent electrode layer and the part the first metal layer be located on this partially transparent electrode layer, described pixel electrode separates setting with described grid, and this pixel electrode is formed by another part transparent electrode layer.
3. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 1, it is characterized in that, described the 3rd road light shield processing procedure utilizes gray level mask or half gray level mask that semiconductor layer and second metal level are exposed, develop, be etched with the channel layer that forms predetermined pattern, drain electrode, source electrode and reflecting part, described channel layer is positioned on the described gate insulator, and part extends described pixel electrode, described drain electrode separates the two ends that are arranged at described channel layer with source electrode, this end that drains extends on the described pixel electrode along described channel layer, and described reflecting part is positioned on the described pixel electrode.
4. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that, described transparent electrode layer is indium tin oxide layer.
5. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that, also comprises after the described step 7, step 8, forms planarization layer at thin-film transistor.
6. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 5 is characterized in that, the planarization layer in the described step 8 is transparent insulating layer.
7. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 1 is characterized in that, described the first metal layer, second metal level, and transparent electrode layer form by sputter process respectively.
8. the manufacturing method of array base plate of semi-penetration semi-reflection liquid crystal display as claimed in claim 5 is characterized in that, described insulating barrier, semiconductor layer, and planarization layer form by chemical vapour deposition (CVD) respectively.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100567910A CN102569191B (en) | 2012-03-06 | 2012-03-06 | Manufacturing method of array substrate of semi-penetration and semi-reflection liquid crystal display |
| US13/509,996 US8673663B2 (en) | 2012-03-06 | 2012-03-11 | Method for manufacturing array substrate of transflective liquid crystal display |
| PCT/CN2012/072166 WO2013131284A1 (en) | 2012-03-06 | 2012-03-11 | Method for manufacturing array substrate of transflective liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100567910A CN102569191B (en) | 2012-03-06 | 2012-03-06 | Manufacturing method of array substrate of semi-penetration and semi-reflection liquid crystal display |
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| CN102569191A CN102569191A (en) | 2012-07-11 |
| CN102569191B true CN102569191B (en) | 2013-09-04 |
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| WO (1) | WO2013131284A1 (en) |
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| CN102738080B (en) * | 2012-07-20 | 2014-06-18 | 深圳市华星光电技术有限公司 | Method for manufacturing array substrate with embedded photovoltaic cell |
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| KR100792300B1 (en) * | 2005-11-11 | 2008-01-07 | 비오이 하이디스 테크놀로지 주식회사 | Method for fabricating array substrate of transflective type liquid crystal display |
| CN101621039B (en) * | 2008-07-01 | 2011-02-09 | 中华映管股份有限公司 | Pixel structure manufacturing method and pixel structure |
| CN101661199B (en) * | 2008-08-27 | 2011-12-28 | 北京京东方光电科技有限公司 | Method for manufacturing array substrate of semi-permeable liquid crystal display device |
| TWI571684B (en) * | 2008-11-28 | 2017-02-21 | 半導體能源研究所股份有限公司 | Liquid crystal display device |
| JP5332635B2 (en) * | 2009-01-19 | 2013-11-06 | 富士通株式会社 | Electronic signature method, electronic signature program, and electronic signature device |
| CN101807550B (en) * | 2009-02-18 | 2013-05-22 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof and LCD monitor |
| CN101957526B (en) * | 2009-07-13 | 2013-04-17 | 北京京东方光电科技有限公司 | TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof |
| CN101840892B (en) * | 2010-04-16 | 2012-04-18 | 华映视讯（吴江）有限公司 | Thin film transistor baseplate of reflecting type liquid crystal display panel and manufacturing method thereof |
| CN102148195B (en) * | 2010-04-26 | 2013-05-01 | 北京京东方光电科技有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array substrate and manufacturing method thereof |
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| CN102569191A (en) | 2012-07-11 |
| WO2013131284A1 (en) | 2013-09-12 |
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