CN102540462A - Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics - Google Patents
Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 59
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000013461 design Methods 0.000 title abstract description 30
- 239000003989 dielectric material Substances 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 239000007769 metal material Substances 0.000 claims abstract description 15
- 239000011195 cermet Substances 0.000 claims description 31
- 238000002834 transmittance Methods 0.000 claims description 23
- 239000006185 dispersion Substances 0.000 claims description 5
- 229910001006 Constantan Inorganic materials 0.000 claims description 2
- 238000004364 calculation method Methods 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 53
- 230000003287 optical effect Effects 0.000 description 32
- 239000000463 material Substances 0.000 description 28
- 239000010409 thin film Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 5
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- 238000007733 ion plating Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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Abstract
The invention discloses a Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics. The method comprises the following steps of: selecting refractive indexes and dissipation coefficients of a dielectric material and a doped metal material, and calculating dielectric constants of the dielectric material and the doped metal material; calculating a dielectric constant, a refractive index and a dissipation coefficient of a metal ceramic film; calculating the transmissivity and the absorption coefficient of the metal ceramic film; and comparing a transmissivity or absorption coefficient design value required by the metal ceramic film with the calculated transmissivity or absorption coefficient, and if results are not consistent, modifying a value of a metal doping amount for repeated calculation until the results are consistent, wherein the metal doping amount when the results are consistent is the required final doping amount. The method has the characteristics of accuracy, scientificalness and high efficiency, and can comprehensively disclose a change rule of the metal ceramic film photoelectric characteristics with doped metals, doping amount, incident light wavelength and other parameters.
Description
Technical Field
The invention relates to a metal ceramic film material (namely a metal oxide material), in particular to a design method for the photoelectric characteristic of a metal ceramic film.
Background
With the development of micro/nano/photoelectronic technology, thin film materials are widely used in the fields of lasers, solar cells, detectors, sensors, flat panel displays and the like. Thus, the properties of the thin-film material determine the properties of the thin-film component. A number of studies have shown that: a composite material formed by mixing two or more materials has optoelectronic characteristics that are not possessed by a single material. The cermet thin film is a composite thin film composed of metal and a ceramic material (dielectric material), and is widely used in optical devices, information storage, solar cells and the like because of its excellent optical characteristics, and the dielectric constant, refractive index, dissipation factor and the like of a doped metal have an important influence on the photoelectron characteristics of the dielectric material.
The Maxwell-Garnett theory was proposed by Maxwell and Garnett in 1904 and 1906, respectively, and was later called as the Maxwell-Garnett theory, abbreviated as MG theory. The theory considers that a very small amount of metal particles are dispersed in a medium matrix, the distance between the particles is large, no interaction exists between the particles, and the particles are scattered respectively; the particles are polarized induced by the transient field and the external field can be modified by the Lorentz (Lorentz) local field. The MG theory can be used for solving the characteristics of the metal ceramic dispersion microstructure such as dielectric constant and the like.
The main preparation methods of the current metal ceramic film include a vacuum evaporation method, a vacuum sputtering method, an ion plating method, a chemical vapor deposition method, a sol-gel method and the like. However, the design and manufacturing process of the cermet thin film is complicated because of the incompatibility of the cermet thin film material and the requirement of specific components, which require careful design and operation.
Disclosure of Invention
The invention aims to provide a method for designing the photoelectric characteristics of a metal ceramic film based on the Maxwell-Garnett theory, which can improve the accuracy and efficiency of the photoelectric characteristic design of the metal ceramic film, shorten the research and development period of a new product and reduce the cost.
The technical scheme adopted by the invention comprises the following steps in sequence:
(1) selection of refractive index
Coefficient of dispersion
And a selected refractive index
、Coefficient of dissipation
The dielectric constant of the dielectric material is calculatedAnd dielectric constant of the doped metal material
iIs an imaginary unit;
(2) according to the formula
Calculating the dielectric constant of the cermet film
，
The initial doping amount is 0;
(3) according to the formula
、Calculating the refractive index of the cermet film
And coefficient of dissipation
，Is dielectric constant
The real part of (a) is,
is dielectric constant
An imaginary part of (d);
(4) according to the formula
And
calculating the transmittance of the cermet film
And absorption coefficient
Refractive index of air
，
Is the wavelength of the incident light;
(5) designing the transmittance or absorption coefficient of the desired cermet film transmittance to the transmittance
Or absorption coefficient
Comparing, if the results are not consistent, modifying the metal doping amount in the step (2)
And (4) and then repeating the steps (3) and (4) until the results are consistent
Is the desired final doping amount.
The invention has the beneficial effects that:
1. aiming at the film system design of the metal ceramic film, the invention calculates the photoelectric characteristic of the metal ceramic film based on Maxwell-Garnett (MG) theory, then selects proper doping metal and proportion to prepare according to the design requirement, or determines the optical constant of proper doping material according to the doping amount and medium material, and selects proper metal material to prepare. The design method has the characteristics of accurate and scientific calculation and high efficiency in the design of the photoelectric characteristics of the thin film, can comprehensively reveal the change rule of the photoelectric characteristics of the thin film material along with parameters such as doped metal, doping amount, incident light wavelength and the like, can improve the accuracy and efficiency of the design of the photoelectric characteristics of the metal ceramic thin film, can further reduce the research and development cost of the novel metal ceramic thin film, and provides a foundation for the design and development of the novel photoelectric material.
2. In order to overcome the complexity problem of design and manufacture, the invention can adopt a computer aided design technology, and uses computer simulation to calculate the optimal matching ratio and characteristic analysis, thereby improving the design efficiency of the film material and reducing the preparation cost.
Drawings
FIG. 1 is a flow chart of the calculation of the metal ceramic film design based on MG theory;
FIG. 2 MG theory-based cermet film dielectric constant with doping amountqThe variation curve of (d);
FIG. 3 is an optical constant of a cermet film based on MG theorynAccording to the doping amountqThe variation curve of (d);
FIG. 4 is an optical constant of a cermet film based on MG theorykAccording to the doping amountqThe variation curve of (d);
FIG. 5 metal ceramic based on MG theoryTransmittance T of ceramic film according to doping amountqThe variation curve of (d);
FIG. 6 MG theory-based cermet film transmittance T versus doped metal refractive indexnThe variation curve of (d);
FIG. 7 MG theory-based dissipation factor of cermet film transmittance T with doped metalkThe change curve of (2).
Detailed Description
According to Maxwell theory, the relationship between the dielectric constant and the optical constant of the nonmagnetic substance is as follows:
wherein,，respectively a Real part (Real part) and an Imaginary part (Imaginary part) of the effective dielectric constant of the metal ceramic film;
，
the refractive index and the dissipation coefficient of the material are respectively, and the refractive index and the dissipation coefficient are collectively called as the optical constants of the material;irepresenting imaginary units.
According to MG dispersion microstructure theory, the dielectric constant of the metal ceramic composite film
The dielectric constant that can be expressed by dielectric (ceramic) materials and doped metal materials is:
in the formula,
in order to dope the amount of the metal particles,
is the dielectric constant of the dielectric material and,
is the dielectric constant of the doped metal material;
the refractive index of the material can be found from the formula (1)
And coefficient of dissipation
The relationship between the real and imaginary parts of the dielectric constant of the cermet material is:
most of the photoelectric characteristics (such as transmissivity, absorption coefficient, etc.) of a material have a relationship with the optical constants of the material, and when the material is injected from air, the transmissivity and the absorption coefficient of the material can be expressed as follows according to the law of refraction of light:
（5）
wherein, the refractive index of air
，Is the wavelength of the incident light;
therefore, the dielectric constants of the ceramic dielectric material and the doped metal material are respectively obtained according to the formula (1) and the two optical constants (n, k) of the refractive index and the dissipation coefficient of the two materials, then the effective dielectric constant of the metal ceramic film is obtained according to the formula (2), and most of the photoelectric characteristics which are closely related to the dielectric constant of the metal ceramic film are obtained, such as: the transmissivity, the refractive index, the absorption coefficient and the like provide theoretical support for subsequent sample preparation.
During design, the photoelectric characteristics of the metal ceramic film can be simulated and calculated by using a computer simulation means of MATLAB programming, and then proper doped metal and proportion are selected according to design requirements, or the optical constant of a proper doped material is determined according to the doping amount and a dielectric material, and a proper metal material is selected and prepared. As shown in fig. 1, the design method of the present invention comprises the following specific steps:
the first step is as follows: selecting proper dielectric material and doping metal
The second step is that: initial parameters. In accordance with the design goals of the system,selecting optical constant refractive index of dielectric material and metal material
And coefficient of dissipation
Is an initial value of the design method. Wherein:
1, the optical parameter of the ceramic dielectric material,and when =2, the optical parameters are optical parameters of the doped metal material.
Is the initial doping amount of the doping metal (the initial value is 0). Namely: selecting refractive index according to the designed value of the transmittance of the metal ceramic film
Coefficient of dispersionAnd a selected refractive index 、Coefficient of dissipation
The dielectric constant of the dielectric material is calculated
And dielectric constant of the doped metal material
iIn units of imaginary numbers.
The third step: benefit toRespectively calculating the dielectric constant of the dielectric material according to the formula (1) by using the optical constant and the metal doping amount of the material selected in the second step
Dielectric constant of doped metal material
。
The fourth step: calculating the dielectric constant of the cermet film according to the third step using the formula (2)
Calculating the real part of the dielectric constant by using the equation (1)And imaginary part
。
The fifth step: using the real part and the imaginary part of the dielectric constant of the cermet film calculated in the fourth step, according to the formula (3),
calculating refractive index of the cermet film
And
dissipation factor, two optical constants.
And a sixth step: calculating the optical characteristics of the metal ceramic film according to the optical constants of the metal ceramic film calculated in the fifth step, such as: transmittance, absorption coefficient, etc., i.e.: when light is irradiated into the metal ceramic film from air, the following can be known according to the law of refraction: cermet filmTransmittance of (4)
Calculation of absorption coefficient
Can be represented by formula (5)
And (4) calculating.
The seventh step: depending on design goals, for example: in the visible light range, the transmittance of the film is required to be more than 80%, and the transmittance is judged and compared with the transmittance of the metal ceramic film obtained by the sixth step: if the transmittance T is<80%, modifying the metal doping amount
Then, continuing to execute the third step of calculation until the design requirement is met, wherein the metal doping amount at the moment is the required final doping amount;
eighth step: the metal doping amount is output properly, and the optical constants (refractive index and dissipation coefficient) and optical characteristics (transmissivity, absorption coefficient, etc.) of the cermet thin film at that time are varied according to the doping amountqThe change curve provides a foundation for subsequent optimization design and film sample preparation.
One embodiment of the present invention is provided below.
Examples
ZnO is used as a novel direct wide-band gap II-VI semiconductor compound material, and is widely applied to the fields of lasers, solar cells, detectors, sensors, flat panel displays and the like due to the advantages of no toxicity, low cost, wide forbidden band, high temperature resistance and the like. In order to design a novel light control element or switch, it is desirable to design a light control element or switch with generally high transmittance in the visible range by Cu doping ((>80%) and is low in a certain wavelength rangeTransmittance. The design is described by taking ZnO (dielectric material) and Cu (doped metal material) as examples. At the wavelength of the incident light
At 430nm, the doping amount
=0.1 as an example:
first, the optical constants (refractive index and dissipation factor) and initial doping amount of ZnO material and Cu material in the visible light range are inputtedq 0 . Optical constant of ZnO
=2.09，
= 0.02; optical constant of Cu
=1.097，=1.916；；
Second, dielectric constants of ZnO and Cu are respectively obtained according to the formula (1)
=4.3677+0.0836i，
=-2.467+4.203i；
Thirdly, the，
Calculation of the composition of the cermet film by the formula (2)Complex dielectric constant
=4.2667+1.2305iReal part of dielectric constant
) 4.2667 and imaginary component (
) Is 1.2305.
Fourthly, the optical constants of the cermet films were calculated according to equation (3) as follows:
fifth, the photoelectric characteristics (transmittance, absorption coefficient, etc.) of the film are calculated from the optical constants of the cermet film obtained in the fourth step using equations (4) and (5) as follows:
according to the aboveCalculating the photoelectric characteristics of the metal ceramic film by the obtained optical constants (example: calculating the transmissivity and absorption coefficient of the film) and judging according to the design target, if not, modifying the doping amount and repeating the third step until the target requirement is met, and finally outputting the appropriate doping amount, the optical constants and the optical characteristics of the metal ceramic film along with the doping amountqProvides a basis for sample preparation.
FIG. 2 is a graph showing the dielectric constant of a cermet film calculated based on MG theory as a function of the amount of metal dopedqThe variation curve of (d); FIG. 3 and FIG. 4 show the different doping amounts of the cermet film with respect to the optical constantqThe change curve of (2). It can be seen that the dielectric constant and optical constant (refractive index, dissipation factor) of the cermet film depend on the doping amountqIs increased. FIG. 5 is a graph showing the variation of optical characteristics (transmittance) of a cermet film with metal doping amount, wherein the film has a low transmittance in the wavelength range of 430nm to 460nm, the transmittance in other visible light regions is above 80%, and the doping amount of Cu metalqLess than or equal to 0.5. Fig. 6 and 7 show the relationship between the transmittance of the cermet film and the optical constants (refractive index n and dissipation factor k) of the doped metal, as can be seen from fig. 6: in the visible light range, except when the refractive index of the doped metal is about 1.1, the transmittance of the cermet thin film using ZnO as a dielectric material is higher than 80%. And as can be seen in fig. 7: in the visible light range, except that the dissipation coefficient of the doped metal is 1.9-2.1, the transmissivity of the metal ceramic film taking ZnO as the dielectric material is higher than 80%. At the same time, it can be seen that: when the metal ceramic film with ZnO as a dielectric material is prepared and the transmissivity is required to be higher than 90%, a proper doped metal material can be selected within the range of Refractive index (Refractive index) of 1.1-1.3 and dissipation Coefficient (extraction Coefficient) of 1.4-1.8; conversely, if one wants to modulate a light control material or device in the visible region, it should modulate around a refractive index of 1.1 and an extinction coefficient of 2. The method provides a theoretical basis for the design of a novel light control component in a visible light range, and has certain value for shortening the research and development period and reducing the cost. Metals based on MG theoryThe design method of the ceramic film has certain theoretical value and guiding significance for novel film design and product research and development.
Claims (1)
1. A method for designing the photoelectric characteristics of a metal ceramic film based on the Maxwell-Garnett theory is characterized by sequentially comprising the following steps:
(1) selection of refractive indexCoefficient of dispersion
And a selected refractive index
、Coefficient of dissipation
The dielectric constant of the dielectric material is calculated
And dielectric constant of the doped metal material
iIs an imaginary unit;
(2) according to the formula
Calculating the dielectric constant of the cermet film
，
The initial doping amount is 0;
(3) according to the formula、
Calculating the refractive index of the cermet film
And coefficient of dissipation
，
Is dielectric constantThe real part of (a) is,
is dielectric constant
An imaginary part of (d);
(4) according to the formulaAnd
calculating the transmittance of the cermet film
And absorption coefficientRefractive index of air，
Is the wavelength of the incident light;
(5) designing the transmittance or absorption coefficient of the desired cermet film transmittance to the transmittanceOr absorption coefficient
Comparing, if the results are not consistent, modifying the metal doping amount in the step (2)And (4) and then repeating the steps (3) and (4) until the results are consistent
Is the desired final doping amount.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109374544A (en) * | 2018-11-02 | 2019-02-22 | 天津津航技术物理研究所 | The characterizing method of the aqueous depth of defect of optical medium film |
| CN110082313A (en) * | 2019-04-22 | 2019-08-02 | 天津大学 | A kind of micro-nano material refractive index measurement method based on prism-coupled instrument |
| CN113960512A (en) * | 2021-11-03 | 2022-01-21 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
| WO2022193399A1 (en) * | 2021-03-19 | 2022-09-22 | 苏州大学 | Spectrally selective thermal radiator and design method therefor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109374544A (en) * | 2018-11-02 | 2019-02-22 | 天津津航技术物理研究所 | The characterizing method of the aqueous depth of defect of optical medium film |
| CN109374544B (en) * | 2018-11-02 | 2021-02-12 | 天津津航技术物理研究所 | Characterization method of water-containing defect depth of optical medium film |
| CN110082313A (en) * | 2019-04-22 | 2019-08-02 | 天津大学 | A kind of micro-nano material refractive index measurement method based on prism-coupled instrument |
| CN110082313B (en) * | 2019-04-22 | 2021-08-20 | 天津大学 | Micro-nano material refractive index measurement method based on prism coupler |
| WO2022193399A1 (en) * | 2021-03-19 | 2022-09-22 | 苏州大学 | Spectrally selective thermal radiator and design method therefor |
| CN113960512A (en) * | 2021-11-03 | 2022-01-21 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
| CN113960512B (en) * | 2021-11-03 | 2023-03-14 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
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Application publication date: 20120704 |