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CN102540462A - Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics - Google Patents

Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics Download PDF

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Publication number
CN102540462A
CN102540462A CN201210037321XA CN201210037321A CN102540462A CN 102540462 A CN102540462 A CN 102540462A CN 201210037321X A CN201210037321X A CN 201210037321XA CN 201210037321 A CN201210037321 A CN 201210037321A CN 102540462 A CN102540462 A CN 102540462A
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metal
cermet
dielectric constant
doping amount
transmittance
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杨平
张立强
陈敏
谢方伟
宋喜福
席涛
于新刚
杨修文
李霞龙
赵艳芳
刘健
王雪楠
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Jiangsu University
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Abstract

The invention discloses a Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics. The method comprises the following steps of: selecting refractive indexes and dissipation coefficients of a dielectric material and a doped metal material, and calculating dielectric constants of the dielectric material and the doped metal material; calculating a dielectric constant, a refractive index and a dissipation coefficient of a metal ceramic film; calculating the transmissivity and the absorption coefficient of the metal ceramic film; and comparing a transmissivity or absorption coefficient design value required by the metal ceramic film with the calculated transmissivity or absorption coefficient, and if results are not consistent, modifying a value of a metal doping amount for repeated calculation until the results are consistent, wherein the metal doping amount when the results are consistent is the required final doping amount. The method has the characteristics of accuracy, scientificalness and high efficiency, and can comprehensively disclose a change rule of the metal ceramic film photoelectric characteristics with doped metals, doping amount, incident light wavelength and other parameters.

Description

基于Maxwell-Garnett理论的金属陶瓷薄膜光电特性设计方法Design method of optoelectronic characteristics of cermet thin film based on Maxwell-Garnett theory

技术领域 technical field

本发明涉及金属陶瓷薄膜材料（即金属氧化物材料），特指一种用于金属陶瓷薄膜光电特性的设计方法。 The invention relates to a cermet thin film material (that is, a metal oxide material), in particular to a design method for the photoelectric characteristics of a cermet thin film.

背景技术 Background technique

随着微/纳/光电子技术的发展，薄膜材料被广泛的用于激光器、太阳能电池、探测器、传感器、平板显示等领域。因此，薄膜材料的性质决定了薄膜元器件的性质。大量的研究结果表明：由两种材料及以上的混合的复合材料具有单一材料所不具备的光电子特性。金属陶瓷薄膜是由金属和陶瓷材料（介质材料）所构成的复合薄膜，因其具有优良的光学特性被广泛的应用于光学器件、信息存储及太阳能电池等方面，而掺杂金属的介电常数、折射率及消散系数等对介质材料的光电子特性有重要影响。 With the development of micro/nano/optoelectronic technology, thin film materials are widely used in lasers, solar cells, detectors, sensors, flat panel displays and other fields. Therefore, the properties of thin film materials determine the properties of thin film components. A large number of research results show that composite materials composed of two or more materials have optoelectronic properties that a single material does not possess. Cermet film is a composite film composed of metal and ceramic material (dielectric material). It is widely used in optical devices, information storage and solar cells because of its excellent optical properties. The dielectric constant of doped metal , Refractive index and dissipation coefficient have an important influence on the optoelectronic properties of dielectric materials.

Maxwell-Garnett （麦克斯韦-格内特）理论是由Maxwell和Garnett于1904和1906年分别提出的，后来成为Maxwell-Garnett 理论，简称MG理论。该理论认为极少量的金属微粒分散于介质基体中，微粒之间的距离较大，微粒之间无相互作用，各自散射；微粒被瞬时场诱导极化，外场可由Lorentz（洛伦兹）局域场进行修正。MG理论可以用来求解金属陶瓷弥散微结构的介电常数等特性。 Maxwell-Garnett (Maxwell-Garnett) theory was proposed by Maxwell and Garnett in 1904 and 1906 respectively, and later became Maxwell-Garnett theory, referred to as MG theory. The theory believes that a very small amount of metal particles are dispersed in the medium matrix, the distance between the particles is large, there is no interaction between the particles, and they are scattered separately; the particles are polarized by the instantaneous field, and the external field can be localized by Lorentz Field is corrected. The MG theory can be used to solve the dielectric constant and other properties of the cermet dispersed microstructure.

当前金属陶瓷薄膜的主要制备方法有真空蒸发法、真空溅射法、离子镀法、化学汽相淀积法及溶胶凝胶法等。但是，由于金属陶瓷薄膜材料的不相容性和特定的组分要求，需要精心设计，谨慎操作，所以金属陶瓷薄膜的设计及制造工序较为繁琐。 At present, the main preparation methods of cermet thin films include vacuum evaporation, vacuum sputtering, ion plating, chemical vapor deposition and sol-gel methods. However, due to the incompatibility of cermet film materials and specific component requirements, careful design and careful operation are required, so the design and manufacturing process of cermet film is relatively cumbersome.

发明内容 Contents of the invention

本发明的目的是提供一种能提高金属陶瓷薄膜光电特性设计的准确性和效率、缩短新产品的研发周期及降低成本的基于Maxwell-Garnett理论的金属陶瓷薄膜光电特性设计方法。 The object of the present invention is to provide a method for designing photoelectric characteristics of cermet thin films based on Maxwell-Garnett theory, which can improve the accuracy and efficiency of photoelectric characteristic design of cermet thin films, shorten the research and development cycle of new products and reduce costs.

本发明采用的技术方案是依次包括如下步骤： The technical scheme that the present invention adopts is to comprise the following steps successively:

（1）选择折射率                                                

Figure 625057DEST_PATH_IMAGE001
、消散系数
Figure 608056DEST_PATH_IMAGE002
的介质材料以及选择折射率
Figure 3266DEST_PATH_IMAGE003
、消散系数
Figure 489742DEST_PATH_IMAGE004
的掺杂金属材料，计算出介质材料的介电常数和掺杂金属材料的介电常数
Figure 782500DEST_PATH_IMAGE006
  i为虚数单位； (1) Select the refractive index
Figure 625057DEST_PATH_IMAGE001
, dissipation coefficient
Figure 608056DEST_PATH_IMAGE002
The dielectric material and the choice of refractive index
Figure 3266DEST_PATH_IMAGE003
, dissipation coefficient
Figure 489742DEST_PATH_IMAGE004
The doped metal material, calculate the dielectric constant of the dielectric material and the dielectric constant of the doped metal material
Figure 782500DEST_PATH_IMAGE006
i is the imaginary unit;

（2）根据公式

Figure 981400DEST_PATH_IMAGE007
计算出金属陶瓷薄膜的介电常数
Figure 820918DEST_PATH_IMAGE008
，
Figure 79861DEST_PATH_IMAGE009
为金属掺杂量，初始掺杂量为0； (2) According to the formula
Figure 981400DEST_PATH_IMAGE007
Calculation of dielectric constant of cermet film
Figure 820918DEST_PATH_IMAGE008
,
Figure 79861DEST_PATH_IMAGE009
is the metal doping amount, and the initial doping amount is 0;

 （3）根据公式

Figure 771873DEST_PATH_IMAGE010
、计算出金属陶瓷薄膜的折射率
Figure 969953DEST_PATH_IMAGE012
及消散系数
Figure 399798DEST_PATH_IMAGE013
，是介电常数
Figure 854230DEST_PATH_IMAGE008
的实部，
Figure 497701DEST_PATH_IMAGE015
是介电常数
Figure 269086DEST_PATH_IMAGE008
的虚部； (3) According to the formula
Figure 771873DEST_PATH_IMAGE010
, Calculate the refractive index of the cermet thin film
Figure 969953DEST_PATH_IMAGE012
and dissipation coefficient
Figure 399798DEST_PATH_IMAGE013
, is the dielectric constant
Figure 854230DEST_PATH_IMAGE008
the real part of
Figure 497701DEST_PATH_IMAGE015
is the dielectric constant
Figure 269086DEST_PATH_IMAGE008
the imaginary part of

（4）根据公式

Figure 998007DEST_PATH_IMAGE016
和
Figure 14505DEST_PATH_IMAGE017
计算出金属陶瓷薄膜的透射率
Figure 512482DEST_PATH_IMAGE018
和吸收系数
Figure 956233DEST_PATH_IMAGE019
，空气折射率
Figure 172451DEST_PATH_IMAGE020
，
Figure 992639DEST_PATH_IMAGE021
为入射光的波长；  (4) According to the formula
Figure 998007DEST_PATH_IMAGE016
and
Figure 14505DEST_PATH_IMAGE017
Calculate the transmittance of the cermet thin film
Figure 512482DEST_PATH_IMAGE018
and absorption coefficient
Figure 956233DEST_PATH_IMAGE019
, air refractive index
Figure 172451DEST_PATH_IMAGE020
,
Figure 992639DEST_PATH_IMAGE021
is the wavelength of the incident light;

（5）将所需金属陶瓷薄膜透射率的透射率或吸收系数设计值与所述透射率

Figure 345123DEST_PATH_IMAGE022
或吸收系数
Figure 723889DEST_PATH_IMAGE019
进行比较，如果结果不一致，则修改步骤（2）中的金属掺杂量
Figure 161824DEST_PATH_IMAGE009
的值，然后重复执行步骤（3）和步骤（4），直至结果一致为止的金属掺杂量
Figure 520124DEST_PATH_IMAGE009
为所求最终的掺杂量。 (5) Calculate the transmittance or absorption coefficient design value of the desired cermet film transmittance with the transmittance
Figure 345123DEST_PATH_IMAGE022
or absorption coefficient
Figure 723889DEST_PATH_IMAGE019
Make a comparison, if the results are inconsistent, modify the amount of metal doping in step (2)
Figure 161824DEST_PATH_IMAGE009
value, and then repeat steps (3) and (4) until the results are consistent with the amount of metal doping
Figure 520124DEST_PATH_IMAGE009
is the desired final doping amount.

本发明的有益效果是： The beneficial effects of the present invention are:

1、本发明针对金属陶瓷薄膜的膜系设计，基于Maxwell-Garnett (MG) 理论，计算金属陶瓷薄膜的光电特性，然后根据设计要求选择合适的掺杂金属及配比进行制备，或可根据掺杂量及介质材料确定合适的掺杂材料的光学常数，并选择合适的金属材料进行制备。该设计方法在薄膜光电特性设计中具有计算准确、科学、效率高的特点，能够全面地揭示薄膜材料光电特性随掺杂金属、掺杂量及入射光波长等参数的变化规律，该方法能够提高金属陶瓷薄膜光电特性设计准确性和效率，可进一步降低新型金属陶瓷薄膜的研发制备成本，为新型的光电材料的设计开发提供基础。 1. The present invention is aimed at the film system design of the metal-ceramic thin film, based on the Maxwell-Garnett (MG) theory, calculates the photoelectric characteristics of the metal-ceramic thin film, and then selects the appropriate doping metal and proportioning to prepare according to the design requirements, or can be prepared according to the doping Impurities and dielectric materials determine the optical constants of suitable doping materials, and select suitable metal materials for preparation. This design method has the characteristics of accurate calculation, scientific and high efficiency in the design of thin film photoelectric characteristics, and can comprehensively reveal the variation law of the photoelectric characteristics of thin film materials with parameters such as doped metal, doping amount, and incident light wavelength. The design accuracy and efficiency of photoelectric characteristics of metal-ceramic thin films can further reduce the cost of research and development and preparation of new metal-ceramic thin films, and provide a basis for the design and development of new optoelectronic materials.

2、为了克服设计制造的繁琐性问题，本发明可采用计算机辅助设计技术，用计算机仿真模拟计算最佳配比及特性分析，提高薄膜材料的设计效率，降低制备成本。    2. In order to overcome the cumbersome problem of design and manufacture, the present invention can adopt computer-aided design technology, use computer simulation to simulate and calculate the optimal ratio and characteristic analysis, improve the design efficiency of thin film materials, and reduce the preparation cost. the

附图说明 Description of drawings

图1基于MG理论的金属陶瓷薄膜设计计算流程图； Fig. 1 Flowchart of design and calculation of cermet thin film based on MG theory;

图2基于MG理论的金属陶瓷薄膜介电常数随掺杂量q的变化曲线； Fig. 2 is based on the variation curve of the dielectric constant of cermet film with doping amount q based on MG theory;

图3基于MG理论的金属陶瓷薄膜光学常数n随掺杂量q的变化曲线； Fig. 3 is based on MG theory the variation curve of optical constant n of cermet thin film with doping amount q ;

图4基于MG理论的金属陶瓷薄膜光学常数k随掺杂量q的变化曲线； Fig. 4 is based on the change curve of the optical constant k of the cermet thin film with the doping amount q based on MG theory;

图5基于MG理论的金属陶瓷薄膜的透射率T随掺杂量q的变化曲线； Fig. 5 is the variation curve of the transmittance T of the cermet film based on the MG theory with the doping amount q ;

图6基于MG理论的金属陶瓷薄膜透射率T随掺杂金属折射率n的变化曲线； Figure 6 is based on the MG theory of the cermet film transmittance T with the change curve of the doped metal refractive index n ;

图7基于MG理论的金属陶瓷薄膜透射率T随掺杂金属消散系数k的变化曲线。 Fig. 7 is the variation curve of the transmittance T of the cermet thin film with the dissipation coefficient k of the doped metal based on the MG theory.

具体实施方式 Detailed ways

根据Maxwell理论可知非磁性物质的介电常数与光学常数之间的关系为： According to Maxwell's theory, the relationship between the dielectric constant and the optical constant of non-magnetic substances is:

Figure 992694DEST_PATH_IMAGE023
        
Figure 840564DEST_PATH_IMAGE024
                    （1）
Figure 992694DEST_PATH_IMAGE023
Figure 840564DEST_PATH_IMAGE024
(1)

其中，，分别为金属陶瓷薄膜有效介电常数的实部（Real part）和虚部（Imaginary part）；

Figure 192545DEST_PATH_IMAGE025
，
Figure 476896DEST_PATH_IMAGE026
分别为材料的折射率及消散系数，其合称为材料的光学常数; i 表示虚数单位。 in, , Respectively, the real part (Real part) and the imaginary part (Imaginary part) of the effective dielectric constant of the cermet thin film;
Figure 192545DEST_PATH_IMAGE025
,
Figure 476896DEST_PATH_IMAGE026
Respectively, the refractive index and dissipation coefficient of the material, which together are called the optical constant of the material; i represents the imaginary number unit.

根据MG弥散微结构理论，金属陶瓷复合薄膜的介电常数

Figure 349078DEST_PATH_IMAGE008
可由介质（陶瓷）材料及掺杂金属材料的介电常数表示为： According to the theory of MG dispersed microstructure, the dielectric constant of metal-ceramic composite thin films
Figure 349078DEST_PATH_IMAGE008
It can be expressed by the dielectric constant of dielectric (ceramic) material and doped metal material as:

 

Figure 111498DEST_PATH_IMAGE027
                            （2）
Figure 111498DEST_PATH_IMAGE027
(2)

式中，

Figure 293081DEST_PATH_IMAGE009
为掺杂金属颗粒的掺杂量，
Figure 686016DEST_PATH_IMAGE028
为介质材料的介电常数，
Figure 585839DEST_PATH_IMAGE029
为掺杂金属材料的介电常数; In the formula,
Figure 293081DEST_PATH_IMAGE009
is the doping amount of doped metal particles,
Figure 686016DEST_PATH_IMAGE028
is the dielectric constant of the dielectric material,
Figure 585839DEST_PATH_IMAGE029
is the dielectric constant of the doped metal material;

由式（1）可知材料的折射率

Figure 89633DEST_PATH_IMAGE012
及消散系数
Figure 125722DEST_PATH_IMAGE013
于金属陶瓷材料的介电常数实部虚部之间的关系为： The refractive index of the material can be known from formula (1)
Figure 89633DEST_PATH_IMAGE012
and dissipation coefficient
Figure 125722DEST_PATH_IMAGE013
The relationship between the real part and the imaginary part of the dielectric constant of the cermet material is:

Figure 689558DEST_PATH_IMAGE030
                             （3）
Figure 689558DEST_PATH_IMAGE030
(3)

材料的大多数光电特性（如：透射率、吸收系数等）都与材料本身的光学常数有关系，从空气射入材料时，根据光的折射定律，材料的透射率及吸收系数可以表示为： Most of the photoelectric properties of materials (such as transmittance, absorption coefficient, etc.) are related to the optical constants of the material itself. When the material is injected into the material from air, according to the law of refraction of light, the transmittance and absorption coefficient of the material can be expressed as:

Figure 76677DEST_PATH_IMAGE016
                                 （4）
Figure 76677DEST_PATH_IMAGE016
(4)

                   （5） (5)

其中，其中，空气的折射率

Figure 773292DEST_PATH_IMAGE020
，为入射光的波长；  where, where, the refractive index of air
Figure 773292DEST_PATH_IMAGE020
, is the wavelength of the incident light;

因此，首先根据陶瓷介质材料及掺杂金属材料的折射率和消散系数这两个光学常数（n，k）分别按公式（1）求出此两种材料的介电常数; 然后根据公式（2）求出金属陶瓷薄膜的有效介电常数，进而求出与金属陶瓷薄膜的介电常数有密切关系的大多数光电特性，如：透射率、折射率及吸收系数等，为后续样品制备提供理论支持。  Therefore, firstly, according to the two optical constants (n, k) of the ceramic dielectric material and the doped metal material, the refractive index and dissipation coefficient are calculated according to the formula (1); then according to the formula (2 ) to obtain the effective dielectric constant of the metal-ceramic film, and then obtain most of the photoelectric properties closely related to the dielectric constant of the metal-ceramic film, such as: transmittance, refractive index and absorption coefficient, etc., to provide a theory for subsequent sample preparation support. the

本发明在设计时，可运用MATLAB编程的计算机仿真手段，模拟计算金属陶瓷薄膜的光电特性，然后根据设计要求选择合适的掺杂金属及配比，或根据掺杂量及介质材料确定合适的掺杂材料的光学常数，并选择合适的金属材料并进行制备。如图1所示，本发明设计方法的具体步骤如下： In the design of the present invention, the computer simulation means of MATLAB programming can be used to simulate and calculate the photoelectric characteristics of the cermet film, and then select the appropriate doping metal and proportion according to the design requirements, or determine the appropriate doping amount and dielectric material. The optical constants of heteromaterials, and the selection and preparation of suitable metal materials. As shown in Figure 1, the concrete steps of the design method of the present invention are as follows:

第一步：选择合适的介质材料和掺杂金属 Step 1: Select the appropriate dielectric material and dopant metal

第二步：初始参数。根据设计目标，选择介质材料及金属材料的光学常数折射率

Figure 116866DEST_PATH_IMAGE031
及消散系数
Figure 290359DEST_PATH_IMAGE032
为该设计方法的初始值。其中：
Figure 238723DEST_PATH_IMAGE033
=1时，为陶瓷介质材料的光学参数，=2时，为掺杂金属材料的光学参数。
Figure 240494DEST_PATH_IMAGE034
为掺杂金属初始掺杂量(初始值为0)。即：根据金属陶瓷薄膜透射率的设计值，选择折射率
Figure 686519DEST_PATH_IMAGE001
、消散系数的介质材料以及选择折射率 、消散系数
Figure 913473DEST_PATH_IMAGE004
的掺杂金属材料，计算出介质材料的介电常数
Figure 163188DEST_PATH_IMAGE005
和掺杂金属材料的介电常数
Figure 86145DEST_PATH_IMAGE006
  i为虚数单位。 The second step: initial parameters. According to the design goal, select the optical constant refractive index of the dielectric material and metal material
Figure 116866DEST_PATH_IMAGE031
and dissipation coefficient
Figure 290359DEST_PATH_IMAGE032
is the initial value for this design method. in:
Figure 238723DEST_PATH_IMAGE033
=1, it is the optical parameter of the ceramic dielectric material, =2, it is the optical parameter of doped metal material.
Figure 240494DEST_PATH_IMAGE034
is the initial doping amount of doped metal (initial value is 0). That is: according to the design value of the transmittance of the cermet film, select the refractive index
Figure 686519DEST_PATH_IMAGE001
, dissipation coefficient The dielectric material and the choice of refractive index , dissipation coefficient
Figure 913473DEST_PATH_IMAGE004
The doped metal material, calculate the dielectric constant of the dielectric material
Figure 163188DEST_PATH_IMAGE005
and the dielectric constant of the doped metal material
Figure 86145DEST_PATH_IMAGE006
i is the imaginary unit.

第三步：利用第二步所选取材料的光学常数和金属掺杂量，根据公式（1）分别求出介质材料的介电常数

Figure 395904DEST_PATH_IMAGE035
，掺杂金属材料的介电常数
Figure 404311DEST_PATH_IMAGE036
。 Step 3: Use the optical constant and metal doping amount of the material selected in the second step to calculate the dielectric constant of the dielectric material according to formula (1)
Figure 395904DEST_PATH_IMAGE035
, the dielectric constant of the doped metal material
Figure 404311DEST_PATH_IMAGE036
.

第四步：根据第三步的计算结果，利用式（2）计算出金属陶瓷薄膜的介电常数

Figure 457718DEST_PATH_IMAGE027
，利用式（1）计算出介电常数的实部及虚部
Figure 214376DEST_PATH_IMAGE038
。 Step 4: Calculate the dielectric constant of the cermet film by using the formula (2) according to the calculation result of the third step
Figure 457718DEST_PATH_IMAGE027
, using equation (1) to calculate the real part of the permittivity and imaginary part
Figure 214376DEST_PATH_IMAGE038
.

  the

第五步：利用第四步计算的金属陶瓷薄膜的介电常数实部与虚部，根据公式（3），

Figure 506817DEST_PATH_IMAGE030
分别计算金属陶瓷薄膜的折射率
Figure 301598DEST_PATH_IMAGE012
及
Figure 995884DEST_PATH_IMAGE013
消散系数这两个光学常数。 Step 5: Using the real part and imaginary part of the dielectric constant of the cermet film calculated in the fourth step, according to the formula (3),
Figure 506817DEST_PATH_IMAGE030
Calculation of Refractive Index of Cermet Thin Films Separately
Figure 301598DEST_PATH_IMAGE012
and
Figure 995884DEST_PATH_IMAGE013
The dissipation coefficient is the two optical constants.

第六步：根据第五步计算的金属陶瓷薄膜光学常数，计算金属陶瓷薄膜的光学特性，如：透射率、吸收系数等，即：光线从空气照射入金属陶瓷薄膜时，根据折射定律可知：金属陶瓷薄膜的透射率通过公式（4）

Figure 585128DEST_PATH_IMAGE016
计算，吸收系数
Figure 630445DEST_PATH_IMAGE039
可以由公式(5) 
Figure 963337DEST_PATH_IMAGE017
计算。 Step 6: According to the optical constants of the cermet film calculated in the fifth step, calculate the optical properties of the cermet film, such as: transmittance, absorption coefficient, etc., that is: when light shines from the air into the cermet film, according to the law of refraction: The transmittance of the cermet film is given by Equation (4)
Figure 585128DEST_PATH_IMAGE016
Calculation, absorption coefficient
Figure 630445DEST_PATH_IMAGE039
can be given by formula (5)
Figure 963337DEST_PATH_IMAGE017
calculate.

第七步：根据设计目标，例如：在可见光范围内，要求薄膜的透射率在80%以上，与第六步计算所得的金属陶瓷薄膜的透射率进行判断比较：如果透射率T<80%，则修改金属掺杂量

Figure 512130DEST_PATH_IMAGE009
后，继续执行第三步计算，直至满足设计要求为止，则此时的金属掺杂量为所求最终的掺杂量； Step 7: According to the design goal, for example: in the visible light range, the transmittance of the film is required to be above 80%, and compared with the transmittance of the cermet film calculated in the sixth step: if the transmittance T<80%, Then modify the metal doping amount
Figure 512130DEST_PATH_IMAGE009
After that, continue to perform the third step of calculation until the design requirements are met, then the metal doping amount at this time is the final doping amount sought;

第八步：输出合适的金属掺杂量、此时的金属陶瓷薄膜的光学常数（折射率及消散系数）及光学特性（透射率及吸收系数等）随掺杂量q的变化曲线，为后续优化设计及薄膜样品制备提供基础。 Step 8: Output the appropriate metal doping amount, the optical constant (refractive index and dissipation coefficient) and optical characteristics (transmittance and absorption coefficient, etc.) of the cermet film at this time. Optimal design and thin film sample preparation provide the basis.

    以下提供本发明的一个实施例。 An embodiment of the present invention is provided below.

实施例 Example

ZnO作为新型直接宽带隙Ⅱ-Ⅵ族半导体化合物材料，因其无毒、成本低、宽禁带、耐高温等优点而被广泛的应用于激光器、太阳能电池、探测器、传感器、平板显示等领域。为设计新型光控元器件或开关，希望通过Cu掺杂在可见光范围内设计普遍具有较高的透射率（>80%）且在某一个波长范围内具有很低的透射率。以ZnO（介质材料）及Cu（掺杂金属材料）为例进行设计说明。以入射光波长

Figure 600172DEST_PATH_IMAGE021
为430nm时，掺杂量
Figure 303423DEST_PATH_IMAGE034
=0.1为例说明如下： As a new type of direct wide bandgap II-VI semiconductor compound material, ZnO is widely used in lasers, solar cells, detectors, sensors, flat panel displays and other fields due to its advantages of non-toxicity, low cost, wide bandgap, and high temperature resistance. . In order to design new optical control components or switches, it is hoped that through Cu doping, the design generally has a high transmittance (>80%) in the visible light range and has a very low transmittance in a certain wavelength range. Take ZnO (dielectric material) and Cu (doped metal material) as examples for design description. at the wavelength of incident light
Figure 600172DEST_PATH_IMAGE021
For 430nm, the doping amount
Figure 303423DEST_PATH_IMAGE034
=0.1 as an example as follows:

首先, 输入可见光范围内ZnO材料及Cu材料的光学常数（折射率及消散系数）及初始掺杂量q 0 。，ZnO的光学常数

Figure 236744DEST_PATH_IMAGE001
=2.09，
Figure 843306DEST_PATH_IMAGE002
=0.02；Cu的光学常数
Figure 102249DEST_PATH_IMAGE003
=1.097，=1.916；； First, input the optical constants (refractive index and dissipation coefficient) and the initial doping amount q 0 of the ZnO material and Cu material in the visible light range. , the optical constant of ZnO
Figure 236744DEST_PATH_IMAGE001
=2.09,
Figure 843306DEST_PATH_IMAGE002
=0.02; the optical constant of Cu
Figure 102249DEST_PATH_IMAGE003
=1.097, =1.916;;

第二，根据公式（1）分别求的ZnO及Cu的介电常数

Figure 531274DEST_PATH_IMAGE040
=4.3677+0.0836i，
Figure 992342DEST_PATH_IMAGE041
=-2.467+4.203i； Second, the dielectric constants of ZnO and Cu are calculated according to formula (1)
Figure 531274DEST_PATH_IMAGE040
=4.3677+0.0836 i ,
Figure 992342DEST_PATH_IMAGE041
=-2.467+ 4.203i ;

第三，将，

Figure 834451DEST_PATH_IMAGE029
代人公式（2）计算金属陶瓷薄膜的复合介电常数
Figure 375154DEST_PATH_IMAGE008
=4.2667+1.2305i，介电常数的实部（
Figure 690728DEST_PATH_IMAGE014
）为4.2667和虚部（
Figure 291474DEST_PATH_IMAGE015
）为1.2305。 Third, will ,
Figure 834451DEST_PATH_IMAGE029
Substitute formula (2) to calculate the composite dielectric constant of the cermet thin film
Figure 375154DEST_PATH_IMAGE008
=4.2667+1.2305 i , the real part of the dielectric constant (
Figure 690728DEST_PATH_IMAGE014
) is 4.2667 and the imaginary part (
Figure 291474DEST_PATH_IMAGE015
) is 1.2305.

第四，根据公式（3）分别计算金属陶瓷薄膜的光学常数如下： Fourth, according to formula (3), the optical constants of the cermet thin films are calculated as follows:

Figure 692499DEST_PATH_IMAGE042
=2.0873
Figure 692499DEST_PATH_IMAGE042
=2.0873

Figure 36893DEST_PATH_IMAGE043
=0.2949
Figure 36893DEST_PATH_IMAGE043
=0.2949

第五，根据第四步求出的金属陶瓷薄膜的光学常数，利用公式（4）和（5）计算薄膜的光电特性（透射率和吸收系数等）如下： Fifth, according to the optical constants of the cermet thin film obtained in the fourth step, the photoelectric characteristics (transmittance and absorption coefficient, etc.) of the thin film are calculated using formulas (4) and (5) as follows:

Figure 472554DEST_PATH_IMAGE044
=0.8760
Figure 472554DEST_PATH_IMAGE044
=0.8760

Figure 978621DEST_PATH_IMAGE017
Figure 978621DEST_PATH_IMAGE017

Figure 194839DEST_PATH_IMAGE045
0.0349
Figure 194839DEST_PATH_IMAGE045
0.0349

根据上述求的光学常数计算金属陶瓷薄膜的光电特性（实例：计算了薄膜的透射率和吸收系数）并根据设计目标进行判断，如果没有满足则修改掺杂量后重复步骤三，直至达到目标要求后，最后输出合适的掺杂量及金属陶瓷薄膜的光学常数及光学特性随掺杂量q的变化曲线，为样品制备提供基础。 Calculate the photoelectric characteristics of the cermet film according to the optical constants obtained above (example: calculate the transmittance and absorption coefficient of the film) and judge according to the design goal. If it is not satisfied, modify the doping amount and repeat step 3 until the target requirement is reached. Finally, the appropriate doping amount and the change curve of the optical constants and optical properties of the cermet thin film with the doping amount q are output to provide a basis for sample preparation.

图2 为基于MG理论计算的金属陶瓷薄膜的介电常数随金属的不同掺杂量q的变化曲线；图3、图4为金属陶瓷薄膜光学常数随金属的不同掺杂量q的变化曲线。可以看出金属陶瓷薄膜的介电常数及光学常数（折射率、消散系数）随着掺杂量q的增加而增加。图5为金属陶瓷薄膜的光学特性（透射率）随金属掺杂量的变化曲线，薄膜在波长430nm~460nm范围内具有较低的透射率，其它可见光区域透射率都在80%以上，且铜金属的掺杂量q≤0.5。图6、图7为金属陶瓷薄膜的透射率随掺杂金属的光学常数（折射率n及消散系数k）之间的关系，由图6可以看出：在可见光范围，除了在掺杂金属的折射率为1.1左右时，以ZnO为介质材料的金属陶瓷薄膜的透射率高于80%。而由图7可以看出：在可见光范围内，除掺杂金属的消散系数为1.9~2.1时，以ZnO为介质材料的金属陶瓷薄膜的透射率高于80%。同时可以看出：当要调制以ZnO为介质材料的金属陶瓷薄膜且透射率要求高于90%时，可以在折射率（Refractive index）为1.1~1.3，消散系数（Extinction Coefficient）为1.4~1.8范围内选择合适的掺杂金属材料；反之，如果想调制一种在可见光区域的光控材料或器件，则应在折射率为1.1左右，消散系数2左右调制。这将为新型可见光范围内的光控元器件的设计提供了理论基础，为缩短研发周期和降低成本具有一定的价值。因此，基于MG理论的金属陶瓷薄膜的设计方法对新型薄膜设计及产品研发具有一定的理论价值和指导意义。 Figure 2 is the variation curve of the dielectric constant of the cermet thin film with different metal doping amount q calculated based on MG theory; Figure 3 and Figure 4 are the variation curves of the optical constant of the metal ceramic thin film with different metal doping amount q . It can be seen that the dielectric constant and optical constant (refractive index, dissipation coefficient) of the cermet film increase with the increase of doping amount q . Figure 5 is the curve of the optical properties (transmittance) of the metal-ceramic thin film with the amount of metal doping. The thin film has a low transmittance in the wavelength range of 430nm~460nm, and the transmittance in other visible light regions is above 80%. Metal doping amount q ≤ 0.5. Figure 6 and Figure 7 show the relationship between the transmittance of the metal-ceramic film and the optical constant (refractive index n and dissipation coefficient k) of the doped metal. When the refractive index is about 1.1, the transmittance of the cermet film with ZnO as the dielectric material is higher than 80%. It can be seen from Figure 7 that in the visible light range, when the dissipation coefficient of the doped metal is 1.9~2.1, the transmittance of the cermet thin film with ZnO as the dielectric material is higher than 80%. At the same time, it can be seen that when the cermet film with ZnO as the dielectric material is to be modulated and the transmittance is required to be higher than 90%, the refractive index (Refractive index) is 1.1~1.3, and the dissipation coefficient (Extinction Coefficient) is 1.4~1.8. Select a suitable doped metal material within the range; on the contrary, if you want to modulate a light control material or device in the visible light region, you should modulate it at a refractive index of about 1.1 and an dissipation factor of about 2. This will provide a theoretical basis for the design of new light-control components in the visible light range, and has certain value for shortening the research and development cycle and reducing costs. Therefore, the design method of cermet thin film based on MG theory has certain theoretical value and guiding significance for new thin film design and product development.

Claims (1)

1.一种基于Maxwell-Garnett理论的金属陶瓷薄膜光电特性设计方法，其特征是依次包括如下步骤： 1. a method for designing photoelectric characteristics of metal-ceramic thin films based on Maxwell-Garnett theory, is characterized in that comprising the following steps successively: （1）选择折射率                                                、消散系数
Figure 723637DEST_PATH_IMAGE002
的介质材料以及选择折射率
Figure 201210037321X100001DEST_PATH_IMAGE003
、消散系数
Figure 519424DEST_PATH_IMAGE004
的掺杂金属材料，计算出介质材料的介电常数
Figure 201210037321X100001DEST_PATH_IMAGE005
和掺杂金属材料的介电常数
Figure 630599DEST_PATH_IMAGE006
  i为虚数单位； (1) Select the refractive index , dissipation coefficient
Figure 723637DEST_PATH_IMAGE002
The dielectric material and the choice of refractive index
Figure 201210037321X100001DEST_PATH_IMAGE003
, dissipation coefficient
Figure 519424DEST_PATH_IMAGE004
The doped metal material, calculate the dielectric constant of the dielectric material
Figure 201210037321X100001DEST_PATH_IMAGE005
and the dielectric constant of the doped metal material
Figure 630599DEST_PATH_IMAGE006
i is the imaginary unit; （2）根据公式
Figure 201210037321X100001DEST_PATH_IMAGE007
计算出金属陶瓷薄膜的介电常数
Figure 831161DEST_PATH_IMAGE008
，
Figure DEST_PATH_IMAGE009
为金属掺杂量，初始掺杂量为0； (2) According to the formula
Figure 201210037321X100001DEST_PATH_IMAGE007
Calculation of dielectric constant of cermet film
Figure 831161DEST_PATH_IMAGE008
,
Figure DEST_PATH_IMAGE009
is the metal doping amount, and the initial doping amount is 0; （3）根据公式、
Figure DEST_PATH_IMAGE011
计算出金属陶瓷薄膜的折射率
Figure 19883DEST_PATH_IMAGE012
及消散系数
Figure DEST_PATH_IMAGE013
，
Figure 403590DEST_PATH_IMAGE014
是介电常数的实部，
Figure 201210037321X100001DEST_PATH_IMAGE015
是介电常数
Figure 860165DEST_PATH_IMAGE008
的虚部； (3) According to the formula ,
Figure DEST_PATH_IMAGE011
Calculate the refractive index of the cermet thin film
Figure 19883DEST_PATH_IMAGE012
and dissipation coefficient
Figure DEST_PATH_IMAGE013
,
Figure 403590DEST_PATH_IMAGE014
is the dielectric constant the real part of
Figure 201210037321X100001DEST_PATH_IMAGE015
is the dielectric constant
Figure 860165DEST_PATH_IMAGE008
the imaginary part of  （4）根据公式和
Figure DEST_PATH_IMAGE017
计算出金属陶瓷薄膜的透射率
Figure 630992DEST_PATH_IMAGE018
和吸收系数，空气折射率，
Figure DEST_PATH_IMAGE021
为入射光的波长；  (4) According to the formula and
Figure DEST_PATH_IMAGE017
Calculate the transmittance of the cermet thin film
Figure 630992DEST_PATH_IMAGE018
and absorption coefficient , air refractive index ,
Figure DEST_PATH_IMAGE021
is the wavelength of the incident light; （5）将所需金属陶瓷薄膜透射率的透射率或吸收系数设计值与所述透射率或吸收系数
Figure 121383DEST_PATH_IMAGE019
进行比较，如果结果不一致，则修改步骤（2）中的金属掺杂量的值，然后重复执行步骤（3）和步骤（4），直至结果一致为止的金属掺杂量
Figure 198590DEST_PATH_IMAGE009
为所求最终的掺杂量。 (5) Calculate the transmittance or absorption coefficient design value of the desired cermet film transmittance with the transmittance or absorption coefficient
Figure 121383DEST_PATH_IMAGE019
Make a comparison, if the results are inconsistent, modify the amount of metal doping in step (2) value, and then repeat steps (3) and (4) until the results are consistent with the amount of metal doping
Figure 198590DEST_PATH_IMAGE009
is the desired final doping amount.
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