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CN102549760A - Aluminum paste for a back electrode of solar cell - Google Patents

Aluminum paste for a back electrode of solar cell Download PDF

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Publication number
CN102549760A
CN102549760A CN2010800426748A CN201080042674A CN102549760A CN 102549760 A CN102549760 A CN 102549760A CN 2010800426748 A CN2010800426748 A CN 2010800426748A CN 201080042674 A CN201080042674 A CN 201080042674A CN 102549760 A CN102549760 A CN 102549760A
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CN
China
Prior art keywords
aluminium
paste
solar cell
stuck
weight
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Pending
Application number
CN2010800426748A
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Chinese (zh)
Inventor
李昶模
李承佣
林大成
崔亨燮
洪胜权
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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Publication of CN102549760A publication Critical patent/CN102549760A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

Disclosed herein is an aluminum paste for a back electrode of a solar cell, including, based on the total amount thereof: 65 ~ 75 wt% of aluminum powder having an average particle size dis not tribution of 0.01 ~ 5 [mu]m; 0.01 ~ 5 wt% of glass frit; and 20 ~ 34.90 wt% of an organic vehicle solution. The aluminum paste is advantageous in that since the contact between aluminum paste and a textured silicon wafer is improved, the bowing of a solar cell can be prevented, and the formation of aluminum balls and/or bumps and the occurrence of yellow discoloration can be minimized during a co-firing process, the values of short circuit current (Isc) and open circuit voltage (Voc) can be greatly increased and the efficiency of a solar cell can be remarkably improved.

Description

The backplate of solar cell is stuck with paste with aluminium
Technical field
The backplate that the invention relates to a kind of solar cell is stuck with paste with aluminium.
Background technology
Usually the silicon metal solar cell uses a kind of thick 180～220 microns P-type silicon substrate.It forms thick 0.2～0.6 micron N-type impurity layer on the front surface of P-type silicon substrate, and on N-type impurity layer, forms antireflection in proper order and use SiN xLayer and front electrode.Form the aluminium electrode on the back of the body surface of this external P-type silicon substrate.This aluminium electrode is by using screen painting or similar fashion coating aluminium to stick with paste, and the aluminium of coating is stuck with paste dry, fires dry aluminium for two sections at low temperature (about 600 ℃) and high temperature (800～950 ℃) then and sticks with paste and form.In this cofiring program, aluminium diffuses in the P-type silicon substrate and forms aluminium-silicon (Al-Si) alloy.This Al-Si alloy forms the electronics coupling again of carrying on the back surface field (BSF) layer and preventing to be produced by solar cell, and improvement is by the collection efficiency of the carrier of solar cell generation.The efficient of solar cell is influenced by the thickness of BSF layer and uniformity.Promptly the efficient of solar cell reduces when reducing the thickness of BSF layer, and its efficient increases when increasing its thickness.
In order to reduce the cost of solar cell, reduced the thickness of Silicon Wafer recently simultaneously.Yet when exceedingly reducing the thickness of Silicon Wafer, Silicon Wafer is warpage owing to the coefficient of expansion difference between Silicon Wafer and aluminium, thereby Silicon Wafer splits.
In order to overcome above-mentioned problem, it must reduce the thickness as the aluminium electrode of backplate, and this purpose can be accomplished by the coating weight that reduces the aluminium paste.Yet the thickness of BSF layer (it be the back surface field layer) reduces when the more a spot of aluminium of coating is stuck with paste, and makes to reach the efficiency degradation of solar cell and during the cofiring program, in electrode layer, little by little form aluminium ball and/or projection.In this situation, the aluminium ball that in electrode layer, forms and/or projection reduce the flatness on the back of the body surface of Silicon Wafer, and stress concentrates on these aluminium balls and/or the projection, thereby during solar cell technology or solar battery module technology, cause solar cell to break.
In order to prevent the solar cell warpage and during the cofiring program, form less aluminium ball that conventional art is proposed as follows.Korea patent registration discloses a kind of aluminium for 10-0825580 number and sticks with paste, and it comprises that a kind of particle diameter is 0.5～10 micron aluminium powder, a kind of organic matchmaker's liquid, and a kind of metal alkoxide; The korean unexamined patent application case is announced 10-2008-0068638 number and is disclosed a kind of aluminium paste, and it comprises that a kind of particle diameter is 2～20 microns aluminium powder, a kind of glass material, a kind of organic matchmaker's liquid, reaches a kind of metal hydroxides; The korean unexamined patent application case is announced 10-2008-0057230 number and is disclosed a kind of aluminium paste, and it comprises that a kind of particle diameter is 2～20 microns aluminium powder, a kind of glass material, a kind of organic matchmaker's liquid, reaches a kind of plasticiser; And the korean unexamined patent application case announces and discloses a kind of aluminium for 10-2008-0104179 number and stick with paste, and it comprises that a kind of particle diameter is 4～10 microns aluminium powder, a kind of alkaline glass material, ethoxyquin boron, ethoxyquin titanium and the silica of being fuming.
Except aluminium powder, glass material and organic matchmaker's liquid, the aluminium that above-mentioned patent document discloses is stuck with paste and is included the organic or inorganic additive.Yet these additives are because exist with residue, perhaps during aluminium is stuck with paste the cofiring program, comprise porosely, make resistance that aluminium sticks with paste with the uniformity reduction and be a problem, thereby poorly influence the efficient of solar cell.Above-mentioned in addition aluminium is stuck with paste because aluminium powder has 10～20 microns maximum particle diameter, makes that the aluminium paste is difficult to contact the texture back of the body surface of solar cell equably and be a problem, and the hole that the result wherein forms possibly form the aluminium projection.
Summary of the invention
In view of the above; The problem that the present invention takes place in view of above-mentioned prior art and accomplishing; And one object of the present invention is to provide a kind of backplate of solar cell to stick with paste with aluminium; It can prevent the solar cell warpage and minimize the formation of aluminium ball and/or projection and the generation of flavescence that it can significantly increase the value of short circuit current (Isc) and open circuit voltage (Voc), and can improve the efficient of solar cell significantly during the cofiring program.
In order to accomplish the above object, one aspect of the present invention provides a kind of backplate of solar cell to stick with paste with aluminium, and it comprises by total amount: the average particle size distribution of 65～75 weight % is 0.01～5 micron a aluminium powder; 0.01 the glass material of～5 weight %; And organic matchmaker's liquid of 20～34.90 weight %.
Another aspect of the present invention provides a kind of method of making solar cell, and it comprises the program of using this aluminium paste to form backplate.
Stick with paste according to aluminium of the present invention; Since improvement aluminium stick with paste with the texture Silicon Wafer between contact; During the cofiring program, can prevent the solar cell warpage and can minimize the formation of aluminium ball and/or projection and the generation of flavescence; The value of short circuit current (Isc) and open circuit voltage (Voc) can be significantly increased, and the efficient of solar cell can be improved significantly.
Embodiment
The present invention provides a kind of backplate of solar cell to stick with paste with aluminium, and it comprises by total amount: the average particle size distribution of 65～75 weight % is 0.01～5 micron a aluminium powder; 0.01 the glass material of～5 weight %; And organic matchmaker's liquid of 20～34.90 weight %.
The aluminium powder that is used for aluminium paste of the present invention can have 0.01～5 micron average particle size distribution.
Usually in order to amplify the area that receives sunlight with the surface texturizing of silicon solar cell.Usually monocrystalline silicon wafer crystal is with pyramidal form veining, and this pyramid has 2～15 microns height and 2～20 microns width.On the contrary, polysilicon handle wafer is the form veining with irregular fan's battle array.The texture Silicon Wafer is coated with the aluminium paste by screen painting, intaglio printing or offset printing on its back of the body surface, drying, cofiring forms the aluminium electrode then.In this program, when the particle diameter of aluminum particulate was excessive, aluminium stick with paste to be difficult for the contact Silicon Wafer, therefore be printed and dry back aluminium stick with paste and the grain surface of Silicon Wafer between form the gap.During the cofiring program, gab is stuck with paste the surface that layer moves to the aluminium electrode through aluminium, and it is attended by the generation of aluminium ball and/or projection.Therefore being preferably aluminium, to stick with paste the average particle size distribution of included aluminium powder be 0.01～5 micron.In the average grain diameter of aluminium powder during less than 0.01 micron, it has and during the cofiring that carries out behind the print routine, produces the aluminium projection, and the problem of cumulative ground of Silicon Wafer warpage.This external its particle mean size is during greater than 5 microns, and the fill factor, curve factor of aluminum particulate reduces, thereby reduces the efficient of solar cell.
The aluminium powder that has this average particle size distribution in use prepares aluminium when sticking with paste, and aluminium is stuck with paste the degree of depth and infiltrated in the texture Silicon Wafer, and the porosity of aluminium in sticking with paste also reduces.So on Silicon Wafer, be formed uniformly back of the body surface field (BSF) layer, the resistance step-down of aluminium electrode, and prevent the Silicon Wafer warpage.When the aluminium that therefore prepares with this aluminium powder in use pasted and makes solar cell, the short-circuit current value of solar cell increased, and its efficient also increases.The solar cell of making in this way in addition is because of preventing after the cofiring program that the flavescence that in the aluminium electrode, takes place is favourable.
Aluminium of the present invention is in addition stuck with paste, and can to use a kind of average particle size distribution be 0.01～5 micron aluminium powder.
Aluminium of the present invention is stuck with paste the aluminium powder of the amount that can comprise 65～75 weight %.When the amount of sticking with paste included aluminium powder at aluminium was lower than 65 weight %, it had the aluminium lamination attenuation of after the cofiring program, printing, and makes to form back of the body surface field (BSF) layer fully, thereby reduces the problem of the efficient of solar cell.The amount that this external aluminium is stuck with paste included aluminium powder is during greater than 75 weight %, and it is blocked up that it has the printing aluminium lamination to become, thereby cause the problem of Silicon Wafer warpage.
Aluminium of the present invention is stuck with paste can comprise 0.01～5 weight %, is preferably 0.05～3 weight %, is more preferred from the glass material of the amount of 0.1～1 weight %.
The glass material can be Bi 2O 3-SiO 2-Al 2O 3-B 2O 3-SrO.The glass material can include but not limited to the Bi of 20～30 moles of % 2O 3, 5～15 moles of % Al 2O 3, 25～35 moles of % SiO 2, the SrO of 1～10 mole of %, and the B of 20～40 moles of % 2O 3
In the glass material, use SrO to reduce the softening point of glass material effectively.The softening point of glass material increases when the glass material does not comprise SrO, makes that aluminium is stuck with paste softening deficiency during cofiring, and the adhesion between aluminium paste and Silicon Wafer reduces as a result, thereby reduces the efficient of solar cell.Yet the softening point of glass material is low excessively when the glass material comprises excessive SrO, causes the projection of aluminium electrode.
Be used for the softening point that glass material of the present invention has 400～600 ℃ in addition.When the softening point of glass material was lower than 400 ℃, the thermal coefficient of expansion of glass material relatively increased, and therefore the Silicon Wafer of cofiring is easy to warpage during the solar cell processing procedure.When this external its softening point was higher than 600 ℃, the glass material was not melted to the degree that adhesion is provided fully between aluminium lamination and silicon wafer layer in the cofiring program, so adhesion is therebetween degenerated.
Aluminium of the present invention is stuck with paste organic matchmaker's liquid that can comprise 20～34.90 weight % by its total amount.Organic matchmaker's liquid is by fluoropolymer resin being dissolved in organic solvent and preparing, if necessary then can comprising thixotropic agent, wetting agent, additive etc.
Be used for organic matchmaker's liquid of the present invention can comprise 75 weight % or more organic solvent, 1～30 weight % by its total amount fluoropolymer resin, 5 weight % or wetting agent still less and thixotropic agent, reach the additive of 1～10 weight %.
Organic solvent can have 150～300 ℃ boiling point, makes it can prevent the flowability that aluminium is stuck with paste drying and controlled the aluminium paste.The instance of organic solvent commonly used can comprise glycol ethers, like tripropylene glycol methyl ether, DPG positive propyl ether, DPG n-butyl ether, tripropylene glycol n-butyl ether, propane diols phenylate, diethylene glycol ether, diethylene glycol n-butyl ether, diethylene glycol hexyl ether, glycol hexyl ether, triethylene glycol methyl ether, tri ethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, terpineol,
Figure BDA0000146626100000041
ethylene glycol etc.
The instance of fluoropolymer resin can comprise pyrollidone, polyvinyl alcohol, polyethylene glycol, ethyl cellulose, rosin, phenol resin, acrylic resin etc.The amount of polymer can be 1～30 weight % by the total amount of organic matchmaker's liquid, is preferably 5～25 weight %.In the amount of polymer during less than 1 weight %, print force that aluminium is stuck with paste and the degeneration of dispersion liquid stability.Its amount is higher than 30 weight % and then can't aluminium be stuck with paste printing in addition.
As for thixotropic agent and wetting agent, it can use the thixotropic agent that is usually used in association area and wetting agent and unrestricted.
Additive can be dispersant that is usually used in association area etc.As for dispersant, it can use commercially available interfacial agent, and it can be independently or combination with one another and using.The instance of interfacial agent can comprise: non-ionic surfactant, like ether (comprising alkyl polyoxyethylene ether, alkylaryl APEO, polyoxyethylene-polyoxypropylene copolymer etc.), ester-ether (comprising the APEO of glyceride, the APEO of sorbitan ester, the APEO of sorbitol ester etc.), ester (comprising cithrol, glyceride, sorbitan ester, propylene glycol ester, sugar ester, alkyl poly glucoside etc.), and nitrogenous interfacial agent (comprising fatty acid alkanol amides, polyoxyethylene fatty acid acid amides, polyoxyethylene alkyl amine, amine oxide etc.); And the polymerization interfacial agent, like polyvinyl alcohol, pyrollidone, polyacrylic acid, polyacrylic acid-acid/maleic acid copolymers, gather-the 12-hydroxy stearic acid etc.
The instance of commercially available interfacial agent product can comprise that hypermer KD (being made by Uniqema Corp.), AKM 0531 (being made by NOF Corp.), KP (being made by Shinetsu Kagaku Kogyo Corp.), POLYFLOW (being made by Kyoei Kagaku Corp.), EFTOP (being made by Tokemu Products Corp.), Asahi guard, Surflon (being made by Asahi Glass Corp.), SOLSPERSE (being made by Geneka Corp.), EFKA are (by EFKA Chemicals Co.; Ltd. manufacturing), PB 821 (by Ajinomoto Co., Inc. makes), BYK-184, BYK-185, BYK-2160, Anti-Terra U (making) etc. by BYK Corp..
The amount of dispersant can be 1～10 weight % by the total amount of organic matchmaker's liquid, is preferably 1～5 weight %.
Stick with paste to use according to aluminium of the present invention and rotate simultaneously and rotating planetary-type mixer and preparation easily.Be that this aluminium is stuck with paste and can be stirred then by above-mentioned constituent is placed planetary-type mixer by corresponding proportion of composing, then solid suitably mixed and be dispersed in organic matchmaker's liquid and prepare.When using Brookfield HBDV-III Ultra Rheometer or axle CPE-52 to measure its viscosity for 25 ℃, the aluminium of preparation is stuck with paste and is had 20,000～200 at 5rpm, the viscosity of 000cps in this way.Be preferably and prepare aluminium and stick with paste and to make it have 40,000～100, the viscosity of 000cps.
The present invention provides a kind of method of making solar cell in addition, and it comprises the step of using this aluminium paste to form backplate.
The solar cell of making in this way is difficult for warpage because of it, and forms minimum aluminium ball and/or projection at electrode layer, and making significantly increases the value of short circuit current (Isc) and open circuit voltage (Voc), and improves its efficient significantly and favourable.
Following specific embodiment is described in detail the present invention.Yet, below embodiment only be used to set forth the present invention, and do not limit the scope of the invention.Those skilled in the art can suitably revise it under the situation that does not deviate from the scope of the invention.
Instance 1: the preparation that aluminium is stuck with paste
With the average particle size distribution of 70 weight % is that the proportion of composing of 0.04～5 micron aluminium powder, 0.5 weight % is shown in the glass material of following table 1, and organic matchmaker's liquid (wherein ethyl cellulose being dissolved in glycol ethers) of 29.5 weight % formation mixture that is mixed with each other in proper order, uses a kind of rotate simultaneously and rotating blender stirs mixture 3 minutes with the rotating speed of 1000rpm and preparation aluminium is stuck with paste then.
<table 1 >
Composition Mole %
Al 2O 3 6.5％
SrO 5.5％
Bi 2O 3 26.0％
B 2O 3 30.0％
SiO 2 32.0％
Tg (branchpoint) 453
Thermal coefficient of expansion (10 -7/℃) 77
Tdsp 507
Instance 2: the preparation that aluminium is stuck with paste
Preparing aluminium with the same way as like instance 1 and stick with paste, is 0.04～5 micron aluminium powder, and organic matchmaker's liquid of 34.5 weight % except the average particle size distribution that adds 65 weight %.
Instance 3: the preparation that aluminium is stuck with paste
Preparing aluminium with the same way as like instance 1 and stick with paste, is 0.04～5 micron aluminium powder, and organic matchmaker's liquid of 24.5 weight % except the average particle size distribution that adds 75 weight %.
Comparative example 1: the preparation that aluminium is stuck with paste
Prepare aluminium with same way as and stick with paste, except the glass material is replaced with the glass material that proportion of composing is shown in following table 2 like instance 1.
<table 2 >
Composition Mole %
Al 2O 3 10.91％
SrO -
Bi 2O 3 12.94％
B 2O 3 46.93％
SiO 2 28.61％
Tg (branchpoint) 473
Thermal coefficient of expansion (10 -7/℃) 73
Tdsp 523
Comparative example 2: the preparation that aluminium is stuck with paste
Preparing aluminium with the same way as like instance 1 and stick with paste, is 0.04～5 micron aluminium powder, and organic matchmaker's liquid of 23.5 weight % except the average particle size distribution that adds 76 weight %.
Comparative example 3: the preparation that aluminium is stuck with paste
Preparing aluminium with the same way as like instance 1 and stick with paste, is that to replace average particle size distribution be 0.04～5 micron aluminium powder for 2～10 microns aluminium powder except using average particle size distribution.
Comparative example 4: the preparation that aluminium is stuck with paste
Preparing aluminium with the same way as like instance 1 and stick with paste, is that to replace average particle size distribution be 0.04～5 micron aluminium powder for 5～15 microns aluminium powder except using average particle size distribution.
Test case: make solar cell and test its characteristic
With size is 156X156 millimeter and thick 200 microns monocrystalline silicon wafer crystal surface texturizing, makes that pyramidal height is about 4～6 microns, and the N-side with the surface texturizing Silicon Wafer is coated with SiN then xThen it is dry then to use silver to stick with paste on the back of the body surface of Silicon Wafer the printing busbar, and the aluminium that uses the screen printing plate of 250 sieve meshes to be coated with instance 1 to 3 and comparative example 1 to 4 is above that then stuck with paste, and the weight that makes aluminium stick with paste is 1.5 ± 0.1 grams, and is dry then.Use silver paste printing finger line on the front surface of Silicon Wafer dry then in addition.
Then will carry out Silicon Wafer cofiring in continuous infrared heating heating furnace of said procedure, and make that the temperature of firing the district is 720～900 ℃, thereby make solar cell.
In the cofiring program, band oven can be passed through and the while cofiring in the preceding and back of the body surface of Silicon Wafer.Comprise about 600 ℃ district that fires of burning district and 800～950 ℃ at this band oven.In this band oven, organic substance is removed from aluminium paste and silver-colored the paste, melted back of the body surface and the aluminium on the front surface of coating Silicon Wafer then and stick with paste formation electrode with silver-colored the paste.
The warpage degree of manufacturing solar cell is by four limits of solar cell being inserted in the bottom, measures the degree that its middle body improved then and assesses.The projection and the aluminium ball that produce around the aluminium backplate with perusal in addition, and with its number count.Its result is shown in following table 3.
The SCM-1000 (it is a kind of device of assessing the performance of solar cell) that use is made by FitTech Corporation assesses the efficient of manufacturing solar cell.Its result is shown in following table 4.
<table 3 >
Figure BDA0000146626100000081
<table 4 >
Figure BDA0000146626100000091
The maximum power of Pmax=solar cell
Isc=short circuit current (A)
Voc=open circuit voltage (V)
The Rs=series resistance
The FF=fill factor, curve factor
Though disclosed preferred embodiment of the present invention for illustrative purposes, it will be understood by a person skilled in the art that under the situation of scope of the present invention that does not deviate from appended claim announcement and spirit, various modifications, interpolation and replacement all are possible.

Claims (5)

1. the backplate of a solar cell is stuck with paste with aluminium, it is characterized in that, comprises by total amount: the average particle size distribution of 65～75 weight % is 0.01～5 micron a aluminium powder; 0.01 the glass material of～5 weight %; And organic matchmaker's liquid of 20～34.90 weight %.
2. aluminium according to claim 1 is stuck with paste, and it is characterized in that said glass material is Bi 2O 3-SiO 2-Al 2O 3-B 2O 3-SrO.
3. aluminium according to claim 2 is stuck with paste, and it is characterized in that said glass material comprises the Bi of 20～30 moles of % 2O 3, 5～15 moles of % Al 2O 3, 25～35 moles of % SiO 2, the SrO of 1～10 mole of %, and the B of 20～40 moles of % 2O 3
4. aluminium according to claim 3 is stuck with paste, and it is characterized in that said glass material has 400～600 ℃ softening point.
5. a method of making solar cell is characterized in that, comprises to use aluminium according to claim 1 to stick with paste the program that forms backplate.
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