CN102534763A - Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof - Google Patents
Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof Download PDFInfo
- Publication number
- CN102534763A CN102534763A CN2012100140455A CN201210014045A CN102534763A CN 102534763 A CN102534763 A CN 102534763A CN 2012100140455 A CN2012100140455 A CN 2012100140455A CN 201210014045 A CN201210014045 A CN 201210014045A CN 102534763 A CN102534763 A CN 102534763A
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon carbide
- bucket
- porous graphite
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a graphite crucible for growing large-size silicon carbide single crystal by a physical vapor deposition method. The graphite crucible comprises a crucible barrel for holding a silicon carbide raw material, and an upper cover, wherein mutually screwed threads are arranged on the inner wall of the crucible barrel and the outer wall of the upper cover, and the upper cover is in threaded connection with the crucible barrel; a positioning block for placing of a porous graphite plate is arranged on the inner wall of the crucible barrel; and the porous graphite plate is placed on the positioning block, and the outside diameter of the porous graphite plate is in correspondence with the inside diameter of the crucible barrel. According to the invention, the influence of carbonization of the silicon carbide raw material on the crystal growth is effectively avoided, and the crystal growth stability and success rate are improved.
Description
Technical field
The present invention relates to a kind of plumbago crucible and application thereof of physical vaporous deposition growing large-size single-crystal silicon carbide, belong to the single crystal growing technical field.
Background technology
Silit (SiC) monocrystal material is the representative of third generation wide bandgap semiconductor materials; Have character such as broad stopband, high heat conductance, the saturated rate of migration of high electronics, high breakdown electric field; Compare with the s-generation semiconductor material that with GaAs is representative with the first-generation semiconductor material that with silicon is representative; Obvious superiority is arranged, be considered to make ideal semiconductor materials such as opto-electronic device, high-frequency high-power device and high-temperature electronic device.Be widely used at aspects such as white-light illuminating, optical storage, video display, space flight and aviation, hyperthermia radiation environment, petroleum prospecting, robotization, radar and communications, automotive electronicsization and power electronics.
The growth fraction of single-crystal silicon carbide material is difficulty, and according to theoretical analysis, if from the stoichiometric ratio melt, adopt Czochralski grown SiC monocrystalline, condition is very harsh because the congruent eutectic point of SiC only in temperature＞3200 ℃, pressure surpasses 10
5(1atm is about 10 to atm
5Pa) just possible under the condition, therefore be difficult to realize.Generally adopt physical vaporous deposition (also being subliming method or improved Lely method) at present; This growth method is on the basis of Lely method, to be proposed in 1978 by scientist Tairov of the FSU and Tsvetkov; Its advantage is: the configuration that adopts SiC seed crystal control institute growing crystal; Overcome the shortcoming of Lely method spontaneous nucleation growth, can obtain the SiC monocrystalline of single configuration; But the single-crystal silicon carbide of growing large-size; Growth pressure is in a normal atmosphere (1atm), and growth temperature is between 2000 ℃-2500 ℃, far below the required pressure and temperature of melt growth.The main employing physical vaporous deposition of present silicon carbide monocrystal growth.Physical vaporous deposition generally adopts the Frequency Induction Heating mode, and crucible adopts graphite material, under vacuum or under the inert gas atmosphere protection, carries out single crystal growing.The silicon carbide monocrystal growth requirement condition is very harsh; Need stable temperature field and gaseous fraction environment; But because carbon can be stayed in the crucible with the form of solid particulate in the sic raw material decomposition course; Make a temperature constantly variation in the crucible, so the design of crucible is even more important for silicon carbide monocrystal growth.
Summary of the invention
Deficiency to prior art; The present invention provides a kind of plumbago crucible of physical vaporous deposition growing large-size single-crystal silicon carbide; This crucible has not only avoided the sic raw material carbonization to the influence that crystal growth caused, and has improved the stability and the success ratio of crystal growth.
The present invention also provides a kind of method of utilizing above-mentioned plumbago crucible to produce single-crystal silicon carbide.
Technical scheme of the present invention is following:
A kind of plumbago crucible of physical vaporous deposition growing large-size single-crystal silicon carbide; Comprise the crucible bucket and the loam cake of accommodating sic raw material; The upper inside wall of said crucible bucket and the outer wall of loam cake are provided with the screw thread that screws each other, and said loam cake and crucible bucket are threaded through described; Described crucible bucket inwall is provided with the preset pieces of placing porous graphite cake; On preset pieces, be placed with the porous graphite plate, the internal diameter of the external diameter of said porous graphite plate and crucible bucket adapts.
The material of said crucible bucket and loam cake is a high-density graphite, and the density of said high-density graphite is 1.2-2.0g/cm
3
The material of said porous graphite plate is low density porous graphite, and the density of said low density porous graphite is 0.4-1.0g/cm
3
Described preset pieces was provided with along one week of inwall of crucible bucket, was circular.
Described preset pieces comprises a plurality of protruding block that is provided with along one week of inwall of crucible bucket.
Preferably, the density of said high-density graphite is 1.4-1.8g/cm
3
Preferably, the density range of said low density porous graphite is 0.6-0.8g/cm
3
The thickness of said porous graphite plate is 2-15mm; The void content of porous graphite plate is 40%-70%.
Preferably, the internal diameter of said crucible bucket is 80-180mm; The height of said crucible bucket is 80-300mm;
Preferably, the internal diameter of said crucible bucket is 181-270mm; The height of said crucible bucket is 200-500mm.
Plumbago crucible of the present invention is used for physical vaporous deposition and prepares the large size silicon-carbide monocrystalline.Particularly diameter is at the single-crystal silicon carbide more than 2 inches.For the research and development of high temperature semiconductors material and application provide important crystalline material basis.
Said physical vaporous deposition prepares the technology of single-crystal silicon carbide by prior art.
A kind of method of utilizing above-mentioned plumbago crucible to produce single-crystal silicon carbide comprises in the crucible bucket adding sic raw material that the distance range between the upper surface of said sic raw material and the said porous graphite plate lower surface is 5-20mm; In the loam cake bottom surface seed crystal base and seed crystal are set, loam cake are connected with the crucible bucket through screw thread build, utilize physical vaporous deposition to prepare single-crystal silicon carbide.
Said seed crystal base is bonded on the crucible loam cake bottom surface through carbon paste, on the seed crystal base, seed crystal is set.
Technical characterstic of the present invention and excellent results:
1, the present invention is provided with the porous graphite plate especially, and the porous graphite plate provides stable radiation environment for the single crystal growing interface, and the influence that the monocrystalline interface in the feasible growth does not receive the continuous carbonization of raw material has improved the stability and the success ratio of crystal growth.2, the material of porous graphite plate of the present invention is low density porous graphite, and the formation of passing through to atmosphere does not hinder.According to bibliographical information (Drowart; G.D.Maria; M.G.Inghram.Thermodynamic study of SiC utilizing a mass spectrometer [J] .The Journal of Chemical Physics, 1958,29:1015-1021.); Sic powder decomposes-distils reaction, wherein Si (g), SiC during greater than 1800 ℃ in temperature
2(g) and Si
2C (g) is main gaseous component; Gas molecule in space can freely pass through the space in the low density porous graphite; Because growth conditions is controlled under the nearly equilibrium state, the temperature field is more even in the growth chamber, and it is too far away that total Si/C of these components can not depart from equilibrium state; Therefore gaseous component is also very little to the corrosive nature of porous graphite, and therefore said low density porous graphite can not hinder the formation of passing through of atmosphere.
When 3, utilizing plumbago crucible of the present invention to prepare growing silicon carbide single crystal by existing physical vaporous deposition; Products obtained therefrom stable crystal form rate Billy improves more than 40% with the stable crystal form rate of conventional crucible; The protruding rate of the thermograde of numerical simulation growth interface and monocrystalline interface obviously reduces, and the temperature field evenly.Can significantly improve the stability and the success ratio of silicon carbide monocrystal growth, reduce production cost.Plumbago crucible of the present invention helps the suitability for industrialized production of large size silicon-carbide monocrystalline.
4, plumbago crucible shape of the present invention is regular, handling ease.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is existing conventional plumbago crucible;
Wherein: 1, crucible bucket, 2, loam cake, 3, the seed crystal base, 4, seed crystal, 5, sic raw material, 6, preset pieces, 7, the porous graphite plate.
Embodiment
Below in conjunction with Figure of description and embodiment the present invention is done detailed explanation, but be not limited thereto.
Embodiment 1,
As shown in Figure 1.A kind of plumbago crucible of physical vaporous deposition growing large-size single-crystal silicon carbide; Comprise the crucible bucket 1 and loam cake 2 of accommodating sic raw material; The outer wall of the upper inside wall of said crucible bucket 1 and loam cake 2 is provided with the screw thread that screws each other, and said loam cake 2 and crucible bucket 1 are through being threaded; Described crucible bucket 1 inwall is provided with the preset pieces 6 of placing porous graphite cake, and described preset pieces 6 was provided with along one week of inwall of crucible bucket, was circular; On preset pieces 6, be placed with porous graphite plate 7, the internal diameter of the external diameter of said porous graphite plate 7 and crucible bucket 1 should adapt to; The material of said crucible bucket 1 and loam cake 2 is a high-density graphite, and the density of said high-density graphite is: 1.6g/cm
3The material of said porous graphite plate 7 is low density porous graphite, and the density of said low density porous graphite is 0.6g/cm
3, the void content of porous graphite plate is 40%; The thickness of said porous graphite plate is: 7mm.The internal diameter of said crucible bucket is 100mm; The height of said crucible bucket is 200mm.
Embodiment 2,
A kind of method of utilizing embodiment 1 said plumbago crucible to produce single-crystal silicon carbide comprises in crucible bucket 1, adding sic raw material that the distance between the upper surface of said sic raw material and said porous graphite plate 7 lower surfaces is 10mm; At the loam cake lower surface seed crystal base and seed crystal are set, loam cake are connected with the crucible bucket through screw thread build, utilize physical vaporous deposition to prepare single-crystal silicon carbide.It is prior art that said physical vaporous deposition prepares single-crystal silicon carbide.
Utilize embodiment 1 said plumbago crucible and the embodiment 2 described methods 3 inches 4H-SiC monocrystalline of 50 stoves of growing.The result lists in the table 1.
Described preset pieces 6 comprises a plurality of protruding block that is provided with along one week of inwall of crucible bucket; The density of said high-density graphite is 1.7g/cm
3The density of said low density porous graphite is 0.5g/cm
3, the void content scope of porous graphite plate is 60%; The thickness of said porous graphite plate is 15mm.The internal diameter of said crucible bucket is 200mm; The height of said crucible bucket is 450mm.
Embodiment 4,
A kind of method of utilizing embodiment 3 said plumbago crucibles to produce 6 inches 4H-SiC monocrystalline comprises in crucible bucket 1, adding sic raw material that the distance between the upper surface of said sic raw material and said porous graphite plate 7 lower surfaces is 15mm; At the loam cake lower surface seed crystal base and seed crystal are set, loam cake are connected with the crucible bucket through screw thread build, utilize physical vaporous deposition to prepare single-crystal silicon carbide.The described method of the present embodiment 6 inches 4H-SiC monocrystalline of 50 stoves of growing, the stable crystal form rate is about 79%, the 2.6 ℃/cm of thermograde of numerical simulation growth interface, the protruding rate 5-12mm in the interface of single-crystal silicon carbide, temperature is evenly.
Comparative Examples, select for use existing conventional plumbago crucible to produce the Comparative Examples of 3 inches 4H-SiC monocrystalline of 50 stoves as embodiment 1,2.
As shown in Figure 2, the physical dimension of said conventional plumbago crucible, material and the embodiment of the invention 1,2 described plumbago crucibles are identical, 3 inches 4H-SiC monocrystalline of growth 50 stoves under same growth conditions.The result lists in table 1.
The parameter comparison of table 1: embodiment 1,2 and the Comparative Examples 13 inches 4H-SiC that produce
Can know by the data shown in the table 1; The 3 inch silicon carbide monocrystalline that adopt plumbago crucible of the present invention to grow are compared with adopting the 3 inch silicon carbide monocrystalline that conventional plumbago crucible grew; Temperature field in its process of growth becomes even; And then the stable crystal form rate of its single-crystal silicon carbide is improved greatly, and the thermograde of numerical simulation growth interface has reduced by 3.7 ℃/cm, and the protruding rate scope in the interface of single-crystal silicon carbide reduces.Adopt the net thickness of the single-crystal silicon carbide that plumbago crucible according to the invention grows on average to improve 6mm.
Claims (9)
1. the plumbago crucible of a physical vaporous deposition growing large-size single-crystal silicon carbide; Comprise the crucible bucket and the loam cake of accommodating sic raw material; The upper inside wall of said crucible bucket and the outer wall of loam cake are provided with the screw thread that screws each other, and said loam cake and crucible bucket are threaded through described; It is characterized in that described crucible bucket inwall is provided with the preset pieces of placing porous graphite cake; On preset pieces, be placed with the porous graphite plate, the internal diameter of the external diameter of said porous graphite plate and crucible bucket adapts.
2. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, the material of said crucible bucket and loam cake is a high-density graphite, and the density of said high-density graphite is 1.2-2.0g/cm
3, preferred, the density of said high-density graphite is 1.4-1.8g/cm
3
3. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, the material of said porous graphite plate is low density porous graphite, and the density of said low density porous graphite is 0.4-1.0g/cm
3, preferred, the density range of said low density porous graphite is 0.6-0.8g/cm
3
4. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, described preset pieces was provided with along one week of inwall of crucible bucket, was circular.
5. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, described preset pieces comprises a plurality of protruding block that is provided with along one week of inwall of crucible bucket.
6. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, the thickness of said porous graphite plate is 2-15mm; The void content of porous graphite plate is 40%-70%.
7. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, the internal diameter of said crucible bucket is 80-180mm; The height of said crucible bucket is 80-300mm;
8. the plumbago crucible of a kind of physical vaporous deposition growing large-size single-crystal silicon carbide according to claim 1 is characterized in that, the internal diameter of said crucible bucket is 181-270mm; The height of said crucible bucket is 200-500mm.
9. one kind is utilized the method for plumbago crucible production single-crystal silicon carbide according to claim 1; It is characterized in that; Comprise in the crucible bucket adding sic raw material that the distance range between the upper surface of said sic raw material and the said porous graphite plate lower surface is 5-20mm; In the loam cake bottom surface seed crystal base and seed crystal are set, loam cake are connected with the crucible bucket through screw thread build, utilize physical vaporous deposition to prepare single-crystal silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100140455A CN102534763A (en) | 2012-01-17 | 2012-01-17 | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100140455A CN102534763A (en) | 2012-01-17 | 2012-01-17 | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102534763A true CN102534763A (en) | 2012-07-04 |
Family
ID=46342744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100140455A Pending CN102534763A (en) | 2012-01-17 | 2012-01-17 | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102534763A (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066291A (en) * | 2012-12-27 | 2013-04-24 | 中国平煤神马集团开封炭素有限公司 | Method for preparing lithium battery anode material by internal thermal lengthwise graphitization furnace |
| CN104562206A (en) * | 2015-02-02 | 2015-04-29 | 山东大学 | Method for improving crystal form stability of 4H-SiC crystals by virtue of physical vapor transport method |
| CN104962989A (en) * | 2015-07-15 | 2015-10-07 | 中国电子科技集团公司第四十六研究所 | Carrier gas flow controllable single crystal furnace prepared by adopting PVT method for single crystal |
| CN105518187A (en) * | 2013-09-06 | 2016-04-20 | Gtat公司 | Method for producing bulk silicon carbide |
| CN106544724A (en) * | 2016-12-09 | 2017-03-29 | 河北同光晶体有限公司 | A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure |
| CN106757355A (en) * | 2016-12-09 | 2017-05-31 | 河北同光晶体有限公司 | A kind of growing method of gemstones formed of silicon carbide |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN109402731A (en) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | A kind of high-purity semi-insulating silicon carbide crystalloid grower and its method |
| CN109629000A (en) * | 2019-02-02 | 2019-04-16 | 福建北电新材料科技有限公司 | Silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment |
| CN110878424A (en) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | Method for producing SiC single crystal and coated member |
| CN111056554A (en) * | 2019-12-26 | 2020-04-24 | 山东天岳先进材料科技有限公司 | High-purity silicon carbide powder and preparation method and reactor thereof |
| CN111218716A (en) * | 2018-11-26 | 2020-06-02 | 昭和电工株式会社 | Method for producing SiC single crystal ingot |
| CN111362701A (en) * | 2018-12-25 | 2020-07-03 | 比亚迪股份有限公司 | Preparation device of silicon carbide crystal block, silicon carbide crystal block and preparation method thereof |
| CN111394788A (en) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | Method and device for preparing cubic silicon carbide crystals |
| CN111705362A (en) * | 2020-06-17 | 2020-09-25 | 内蒙古中科启辰新材料科技有限公司 | Method for preparing photonic crystal |
| CN112760712A (en) * | 2020-12-24 | 2021-05-07 | 湖南三安半导体有限责任公司 | Crystal growth device |
| CN113445121A (en) * | 2021-06-25 | 2021-09-28 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Growth method of silicon carbide crystal with reduced graphite inclusions |
| CN113652738A (en) * | 2021-07-27 | 2021-11-16 | 奥趋光电技术(杭州)有限公司 | Crucible system for growing crystals by physical vapor transport method and use method thereof |
| CN113789572A (en) * | 2021-09-17 | 2021-12-14 | 北京天科合达半导体股份有限公司 | Crucible structure for growing silicon carbide single crystal and method for growing silicon carbide single crystal |
| CN115216842A (en) * | 2022-06-24 | 2022-10-21 | 厦门大学 | Crucible structure for growing high-quality silicon carbide single crystal and growing method |
| CN115386957A (en) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | High-quality silicon carbide crystal growth crucible |
| CN116136030A (en) * | 2023-04-04 | 2023-05-19 | 内蒙古晶环电子材料有限公司 | Device for bidirectionally growing silicon carbide crystal |
| CN116397332A (en) * | 2023-05-19 | 2023-07-07 | 通威微电子有限公司 | Silicon carbide growth crucible, device and growth process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10291899A (en) * | 1997-04-21 | 1998-11-04 | Showa Denko Kk | Production of silicon carbide single crystal and apparatus for production therefor |
| JP2000264793A (en) * | 1999-03-23 | 2000-09-26 | Denso Corp | Method and apparatus for producing silicon carbide single crystal |
| CN201420112Y (en) * | 2009-05-11 | 2010-03-10 | 西安理工大学 | Grower of SiC monocrystals |
| WO2010111473A1 (en) * | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
| JP2011178590A (en) * | 2010-02-26 | 2011-09-15 | Showa Denko Kk | Component-adjustment member and single crystal growth device provided therewith |
| CN202430332U (en) * | 2012-01-17 | 2012-09-12 | 山东天岳先进材料科技有限公司 | Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method |
-
2012
- 2012-01-17 CN CN2012100140455A patent/CN102534763A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10291899A (en) * | 1997-04-21 | 1998-11-04 | Showa Denko Kk | Production of silicon carbide single crystal and apparatus for production therefor |
| JP2000264793A (en) * | 1999-03-23 | 2000-09-26 | Denso Corp | Method and apparatus for producing silicon carbide single crystal |
| WO2010111473A1 (en) * | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
| CN201420112Y (en) * | 2009-05-11 | 2010-03-10 | 西安理工大学 | Grower of SiC monocrystals |
| JP2011178590A (en) * | 2010-02-26 | 2011-09-15 | Showa Denko Kk | Component-adjustment member and single crystal growth device provided therewith |
| CN202430332U (en) * | 2012-01-17 | 2012-09-12 | 山东天岳先进材料科技有限公司 | Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method |
Non-Patent Citations (2)
| Title |
|---|
| SHIGEHIRO NISHINO，ET AL.: "Growth mechanism and defects in SiC prepared by sublimation method", 《JOURNAL OF CRYSTAL GROWTH》, vol. 147, no. 3, 1 February 1995 (1995-02-01), pages 339 - 342 * |
| 徐淘等: "石墨坩埚生产技术初探", 《非金属矿》, no. 4, 20 July 1994 (1994-07-20), pages 34 - 37 * |
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066291A (en) * | 2012-12-27 | 2013-04-24 | 中国平煤神马集团开封炭素有限公司 | Method for preparing lithium battery anode material by internal thermal lengthwise graphitization furnace |
| CN105518187B (en) * | 2013-09-06 | 2019-11-08 | Gtat公司 | method for producing bulk silicon carbide |
| CN105518187A (en) * | 2013-09-06 | 2016-04-20 | Gtat公司 | Method for producing bulk silicon carbide |
| CN104562206A (en) * | 2015-02-02 | 2015-04-29 | 山东大学 | Method for improving crystal form stability of 4H-SiC crystals by virtue of physical vapor transport method |
| CN104962989A (en) * | 2015-07-15 | 2015-10-07 | 中国电子科技集团公司第四十六研究所 | Carrier gas flow controllable single crystal furnace prepared by adopting PVT method for single crystal |
| CN106544724A (en) * | 2016-12-09 | 2017-03-29 | 河北同光晶体有限公司 | A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure |
| CN106757355A (en) * | 2016-12-09 | 2017-05-31 | 河北同光晶体有限公司 | A kind of growing method of gemstones formed of silicon carbide |
| CN106544724B (en) * | 2016-12-09 | 2019-01-22 | 河北同光晶体有限公司 | A kind of preparation method of graphite plate coating in silicon carbide monocrystal growth thermal field structure |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN107059130B (en) * | 2017-04-20 | 2019-06-18 | 山东大学 | The crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN110878424A (en) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | Method for producing SiC single crystal and coated member |
| US11421339B2 (en) | 2018-09-06 | 2022-08-23 | Showa Denko K.K. | Method of manufacturing SiC single crystal and covering member |
| US11851784B2 (en) | 2018-10-17 | 2023-12-26 | Fujian Beidian Material Technologies Co., Ltd. | Apparatus and method for growing high-purity semi-insulating silicon carbide crystal |
| CN109402731A (en) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | A kind of high-purity semi-insulating silicon carbide crystalloid grower and its method |
| CN111218716B (en) * | 2018-11-26 | 2022-04-26 | 昭和电工株式会社 | Method for producing SiC single crystal ingot |
| US11761114B2 (en) | 2018-11-26 | 2023-09-19 | Resonac Corporation | Method of producing SiC single crystal ingot |
| CN111218716A (en) * | 2018-11-26 | 2020-06-02 | 昭和电工株式会社 | Method for producing SiC single crystal ingot |
| CN111362701B (en) * | 2018-12-25 | 2022-01-07 | 比亚迪股份有限公司 | Preparation device of silicon carbide crystal block, silicon carbide crystal block and preparation method thereof |
| CN111362701A (en) * | 2018-12-25 | 2020-07-03 | 比亚迪股份有限公司 | Preparation device of silicon carbide crystal block, silicon carbide crystal block and preparation method thereof |
| CN109629000A (en) * | 2019-02-02 | 2019-04-16 | 福建北电新材料科技有限公司 | Silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment |
| CN111056554B (en) * | 2019-12-26 | 2021-09-14 | 山东天岳先进科技股份有限公司 | High-purity silicon carbide powder and preparation method and reactor thereof |
| CN111056554A (en) * | 2019-12-26 | 2020-04-24 | 山东天岳先进材料科技有限公司 | High-purity silicon carbide powder and preparation method and reactor thereof |
| CN111394788A (en) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | Method and device for preparing cubic silicon carbide crystals |
| CN111705362A (en) * | 2020-06-17 | 2020-09-25 | 内蒙古中科启辰新材料科技有限公司 | Method for preparing photonic crystal |
| CN112760712A (en) * | 2020-12-24 | 2021-05-07 | 湖南三安半导体有限责任公司 | Crystal growth device |
| CN113445121A (en) * | 2021-06-25 | 2021-09-28 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Growth method of silicon carbide crystal with reduced graphite inclusions |
| CN113652738A (en) * | 2021-07-27 | 2021-11-16 | 奥趋光电技术(杭州)有限公司 | Crucible system for growing crystals by physical vapor transport method and use method thereof |
| CN113789572A (en) * | 2021-09-17 | 2021-12-14 | 北京天科合达半导体股份有限公司 | Crucible structure for growing silicon carbide single crystal and method for growing silicon carbide single crystal |
| CN115216842A (en) * | 2022-06-24 | 2022-10-21 | 厦门大学 | Crucible structure for growing high-quality silicon carbide single crystal and growing method |
| CN115216842B (en) * | 2022-06-24 | 2024-07-02 | 厦门大学 | Crucible structure for growing high-quality silicon carbide single crystal and growing method |
| CN115386957A (en) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | High-quality silicon carbide crystal growth crucible |
| CN116136030A (en) * | 2023-04-04 | 2023-05-19 | 内蒙古晶环电子材料有限公司 | Device for bidirectionally growing silicon carbide crystal |
| CN116397332A (en) * | 2023-05-19 | 2023-07-07 | 通威微电子有限公司 | Silicon carbide growth crucible, device and growth process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102534763A (en) | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof | |
| US11761117B2 (en) | SiC single crystal sublimation growth apparatus | |
| CN206624942U (en) | A kind of device of physical carbon burdening growth carborundum crystals | |
| CN207498512U (en) | A kind of silicon carbide monocrystal growth device for growing high usage | |
| CN103320851A (en) | Large-size 15R silicon carbide crystal preparation method | |
| CN106435735A (en) | Method for optimizing growth of silicon carbide single crystals | |
| CN107955969A (en) | A kind of SiC single crystal growing system being persistently fed | |
| CN106400116B (en) | The method of high quality growing silicon carbice crystals oblique seed crystal support and growing silicon carbide crystal with high quality | |
| CN104947182A (en) | Method for rapidly growing large-size high-purity semi-insulating silicon carbide single crystal | |
| PL234396B1 (en) | Process for the preparation of crystals, especially silicon carbide from the gas phase | |
| CN102268735A (en) | Method for improving crystal form stability of 4H-SiC single crystal | |
| CN108118394B (en) | Method for reducing nitrogen impurity content in silicon carbide single crystal | |
| CN108946735B (en) | Synthesis method of large-particle-size silicon carbide powder for silicon carbide crystal growth | |
| CN106747665B (en) | A kind of preparation method of graphite plate coating in silicon carbide monocrystal growth thermal field structure | |
| CN206244918U (en) | A kind of device for reducing the loss of sic raw material component | |
| CN106544724A (en) | A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure | |
| CN103270202B (en) | Monocrystalline silicon carbide rheotaxial growth kind of brilliant part and a liquid-phase epitaxial growth process for monocrystalline silicon carbide | |
| CN202430332U (en) | Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method | |
| CN103270201A (en) | Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide | |
| US20190010629A1 (en) | METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER | |
| US11499246B2 (en) | Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same | |
| CN206244921U (en) | The device of carbon particle inclusion enclave in a kind of reduction single-crystal silicon carbide | |
| CN110203933A (en) | A kind of method of nitrogen impurity content in reduction silicon carbide powder | |
| CN102912444A (en) | Silicon carbide crystal growth crucible for increasing utilization rate of power sources | |
| PL238539B1 (en) | Method for producing a long silicon carbide crystals from gaseous phase |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120704 |