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CN102534528A - 镀膜件及其制备方法 - Google Patents

镀膜件及其制备方法 Download PDF

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Publication number
CN102534528A
CN102534528A CN2010106180796A CN201010618079A CN102534528A CN 102534528 A CN102534528 A CN 102534528A CN 2010106180796 A CN2010106180796 A CN 2010106180796A CN 201010618079 A CN201010618079 A CN 201010618079A CN 102534528 A CN102534528 A CN 102534528A
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hydrophobic layer
matrix
plated film
film spare
preparation
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张新倍
陈文荣
蒋焕梧
陈正士
李聪
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN2010106180796A priority Critical patent/CN102534528A/zh
Priority to US13/166,311 priority patent/US8614012B2/en
Publication of CN102534528A publication Critical patent/CN102534528A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0658—Carbon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
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Abstract

本发明提供一种镀膜件，其包括基体及形成于基体表面的疏水层，该疏水层为非晶CNy层，其中1≤y≤3。该疏水层与水的接触角达到100～110°，且该疏水层具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体，相应地延长镀膜件的使用寿命。此外，本发明还提供一种上述镀膜件的制备方法。

Description

镀膜件及其制备方法
技术领域
本发明涉及一种镀膜件及该镀膜件的制备方法，特别涉及一种具有疏水效果的镀膜件及该镀膜件的制备方法。
背景技术
浸润性是固体表面的重要性质之一。疏水表面是指固体表面与水的接触角大于90°的表面。近年来，疏水表面在日常生活和工业领域有着越来越重要的应用价值。目前应用较多的主要为在固体表面涂覆表面能低的有机疏水层，其中该类有机疏水层以含氟和/或硅的高分子材料居多；但有机疏水材料通常具有硬度低、不耐磨、耐热温度低等缺点，严重影响其进一步的应用。
发明内容
有鉴于此，有必要提供一种有效解决上述问题的镀膜件。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基体及形成于基体表面的疏水层，该疏水层为非晶CNy层，其中1≤y≤3。
一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
在基体表面形成疏水层，该疏水层为非晶CNy层，其中1≤y≤3，该疏水层采用磁控溅射的方式形成，以石墨靶为靶材，以氨气为反应气体。
本发明所述镀膜件在基体表面沉积疏水层，该疏水层与水的接触角达到100～110°，且该疏水层具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体，相应地延长镀膜件的使用寿命。
附图说明
图1为本发明一较佳实施例镀膜件的剖视图；
图2为本发明一较佳实施例真空镀膜机的示意图。
主要元件符号说明
镀膜件    10
基体      11
疏水层    13
真空镀膜机20
镀膜室    21
石墨靶    23
轨迹      25
真空泵    30
具体实施方式
请参阅图1，本发明一较佳实施方式镀膜件10包括基体11、形成于基体11表面的疏水层13。
该基体11的材质可为不锈钢或陶瓷。
该疏水层13为非晶氮化碳(CNy)层，其中1≤y≤3。该疏水层13以磁控溅射的方式形成于所述基体11上，其厚度可为200～350nm。该疏水层13具有相对较低的表面能，且其与水的接触角可达100～110°。
本发明一较佳实施方式的镀膜件10的制备方法，其包括以下步骤：
提供一基体11，该基体11的材质可为玻璃或不锈钢。
将基体11放入无水乙醇中进行超声波清洗，以去除基体11表面的污渍，清洗时间可为30～50min。
对经上述处理后的基体11的表面进行氩气等离子体清洗，以进一步去除基体11表面的油污，以及改善基体11表面与后续镀层的结合力。结合参阅图2，提供一真空镀膜机20，该真空镀膜机20包括一镀膜室21及连接于镀膜室21的一真空泵30，真空泵30用以对镀膜室21抽真空。该镀膜室21内设有转架(未图示)和相对设置的二石墨靶23。转架带动基体11沿圆形的轨迹25公转，且基体11在沿轨迹25公转时亦自转。
该等离子体清洗的具体操作及工艺参数可为：将基体11固定于真空镀膜机20的镀膜室21中的转架上，将该镀膜室21抽真空至3.0×10-5Torr，然后向镀膜室21内通入流量为500sccm(标准状态毫升/分钟)的氩气(纯度为99.999％)，并施加-100～-180V的偏压于基体11，对基体11的表面进行氩气等离子体清洗，清洗时间为3～10min。
采用磁控溅射法在经氩气等离子体清洗后的基体11上溅镀一疏水层13。该疏水层13为非晶氮化碳(CNy)层，其中1≤y≤3。溅镀该疏水层13在所述真空镀膜机20中进行。开启石墨靶23，并设定石墨靶23的功率为5～10kw，以氨气为反应气体，氨气流量可为200～320sccm，以氩气为工作气体，氩气流量可为300～500sccm。溅镀时对基体11施加-120～-200V的偏压，并加热所述镀膜室21至温度为180～250℃，镀膜时间可为38～55min。该疏水层13的厚度可为200～350nm。
下面通过实施例来对本发明进行具体说明。
实施例1
本实施例所使用的真空镀膜机20为中频磁控溅射镀膜机，为深圳南方创新真空技术有限公司生产，型号为SM-1100H。
提供一基体11，该基体11为玻璃。
等离子体清洗：氩气流量为500sccm，基体11的偏压为-100V，等离子体清洗时间为5min。
溅镀疏水层13：石墨靶23的功率为8kw，氨气流量为200sccm，氩气流量为350sccm，偏压为-120V，镀膜温度为200℃，镀膜时间为40min，该疏水层13的厚度为200nm。
使用接触角测量仪测得本实施例所制得的疏水层13与水的接触角为102.7°。
实施例2
本实施例所使用的真空镀膜机20与实施例1中使用的相同。
提供一基体11，该基体11为不锈钢。
等离子体清洗：氩气流量为500sccm，基体11的偏压为-150V，等离子体清洗时间为5min。
溅镀疏水层13：石墨靶23的功率为10kw，氨气流量为245sccm，氩气流量为250sccm，偏压为-200V，镀膜温度为200℃，镀膜时间为50min，该疏水层13的厚度为300nm。
使用接触角测量仪测得本实施例所制得的疏水层13与水的接触角为108°。
本发明所述镀膜件10在基体11的表面沉积疏水层13，该疏水层13与水的接触角达到100～110°，且该疏水层13为氮化碳层，而氮化碳具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体11，相应地延长镀膜件10的使用寿命。

Claims (7)

1.一种镀膜件，其包括基体及形成于基体表面的疏水层，其特征在于：该疏水层为非晶CNy层，其中1≤y≤3。
2.如权利要求1所述的镀膜件，其特征在于：所述基体为不锈钢或玻璃。
3.如权利要求1所述的镀膜件，其特征在于：所述疏水层的厚度为200～350nm。
4.一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
在基体表面形成疏水层，该疏水层为非晶CNy层，其中1≤y≤3，该疏水层采用磁控溅射的方式形成，以石墨靶为靶材，以氨气为反应气体。
5.如权利要求4所述的镀膜件的制备方法，其特征在于：所述形成疏水层的具体工艺参数为：所述石墨靶的功率为5～10kw，氨气的流量为200～320sccm，以氩气为工作气体，氩气的流量为300～500sccm，基体偏压为-120～-200V，基体的温度为180～250℃，镀膜时间为38～55min。
6.如权利要求4所述的镀膜件的制备方法，其特征在于：所述基体为不锈钢或玻璃。
7.如权利要求4所述的镀膜件的制备方法，其特征在于：所述疏水层的厚度为200～350nm。
CN2010106180796A 2010-12-31 2010-12-31 镀膜件及其制备方法 Pending CN102534528A (zh)

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CN102732827A (zh) * 2011-04-14 2012-10-17 鸿富锦精密工业（深圳）有限公司 镀膜件及其制作方法
CN103469168A (zh) * 2013-08-26 2013-12-25 中国科学院宁波材料技术与工程研究所 一种制备润湿性可控的高光滑高硬TiN薄膜的方法
CN104275904A (zh) * 2013-07-12 2015-01-14 深圳富泰宏精密工业有限公司 壳体及其制作方法

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CN102732827A (zh) * 2011-04-14 2012-10-17 鸿富锦精密工业（深圳）有限公司 镀膜件及其制作方法
CN104275904A (zh) * 2013-07-12 2015-01-14 深圳富泰宏精密工业有限公司 壳体及其制作方法
CN103469168A (zh) * 2013-08-26 2013-12-25 中国科学院宁波材料技术与工程研究所 一种制备润湿性可控的高光滑高硬TiN薄膜的方法
CN103469168B (zh) * 2013-08-26 2015-09-30 中国科学院宁波材料技术与工程研究所 一种制备润湿性可控的高光滑高硬TiN薄膜的方法

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