CN102501045A - Method and device for processing nickel target component - Google Patents
Method and device for processing nickel target component Download PDFInfo
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- CN102501045A CN102501045A CN2011103213097A CN201110321309A CN102501045A CN 102501045 A CN102501045 A CN 102501045A CN 2011103213097 A CN2011103213097 A CN 2011103213097A CN 201110321309 A CN201110321309 A CN 201110321309A CN 102501045 A CN102501045 A CN 102501045A
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- machining
- lathe
- nickel
- grinding
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 360
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000012545 processing Methods 0.000 title claims abstract description 41
- 238000000227 grinding Methods 0.000 claims abstract description 75
- 239000013077 target material Substances 0.000 claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000003754 machining Methods 0.000 claims description 78
- 229910052582 BN Inorganic materials 0.000 claims description 39
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000005219 brazing Methods 0.000 claims description 3
- 239000000839 emulsion Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 10
- 230000003746 surface roughness Effects 0.000 abstract description 10
- 238000003672 processing method Methods 0.000 abstract description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
The invention provides a method for processing a nickel target component. The method comprises the following steps of: providing a back plate with multiple water tanks on one side and a nickel target blank with purity of 99.99%; welding the nickel target material and the back plate together; fixing the nickel target component on a lathe for turning the nickel target blank to obtain the nickel target; and fixing the nickel target component on a grinding machine for grinding the nickel target. By reasonably selecting the lathe blade and strictly controlling the processing parameters, the defects on the surface of the nickel target are reduced in the lathe processing; and after the lathe processing is finished, the nickel target is ground and polished by a grinding machine and a reasonably-selected grinding tool so as to further reduce defects on the surface of the nickel target and obtain the nickel target with high dimensional accuracy and low surface roughness and obtain the nickel target component conforming to the sputtering performance. The invention also provides a processing method capable of processing the nickel target component.
Description
Technical Field
The invention belongs to the technical field of machining in the semiconductor manufacturing industry, and particularly relates to a machining method and a machining device for a nickel target assembly.
Background
Physical Vapor Deposition (PVD) techniques are used in a variety of applications to provide thin film material deposits of precise thickness with atomically smooth surfaces using sputtering target assemblies. The target assembly is composed of a target material which accords with sputtering performance and a back plate which is suitable for being combined with the target material and has certain strength. During sputtering, the target assembly is mounted to a sputtering station and a target located in a chamber filled with an inert gas atmosphere is exposed to an electric field to create a plasma. The plasma of the plasma collides with the surface of the sputtering target, thereby evolving atoms from the target surface. The voltage difference between the target and the substrate to be coated causes the escaping atoms to form the desired film on the surface of the substrate, the quality of which is affected by the roughness of the target surface. When the surface roughness of the target is large, some protrusions with the size exceeding a certain level exist on the surface of the target, and abnormal discharge (micro arc discharge) can be generated on the protrusions on the surface of the target in the sputtering process. And the abnormal discharge causes large particles to be sputtered from the surface of the target and deposited on the surface of the substrate to be coated on the sputtering base, thereby forming spots on the formed thin film and causing short-circuiting of the semiconductor device. Therefore, it is very important to control the machining precision of the target surface during the machining of the target assembly.
At present, the machining process of the nickel target component containing the high-purity nickel target is very immature, and the relevant research on machining parameters of machining is almost blank, so that the machining method and the machining device for manufacturing the nickel target component containing the high-purity nickel target with high dimensional precision and low surface roughness are urgently needed.
Disclosure of Invention
The invention aims to provide a processing method and a processing device of a nickel target component, wherein the material of the nickel target is 4N nickel (namely the purity is 99.99%). The nickel target component processed by the method has the advantages of high dimensional accuracy and low surface roughness.
In order to solve the above problems, the present invention provides a method for processing a nickel target assembly, comprising the steps of:
providing a back plate with a plurality of water tanks on one side and a nickel target blank with the purity of 99.99 percent;
welding the nickel target blank and the back plate together;
fixing the nickel target material assembly on a lathe to perform turning processing on the nickel target material blank to obtain a nickel target material;
and fixing the nickel target material assembly on a grinding machine to grind the nickel target material.
Optionally, the tool of the lathe is a cubic boron nitride blade.
Optionally, the turning includes rough machining and finish machining after the rough machining.
Optionally, during the rough machining, the rotating speed of the main shaft of the lathe is 300r/min to 500 r/min.
Optionally, when the rough machining is performed, the feed amount of the lathe is 0.3mm to 0.5 mm.
Optionally, when the finish machining is performed, the rotating speed of the main shaft of the lathe is 250r/min to 300 r/min.
Optionally, when the finish machining is performed, the feed amount of the lathe is 0.01mm to 0.1 mm.
Optionally, the grinding tool of the grinding machine is a cubic boron nitride grinding wheel.
Optionally, the cubic boron nitride grinding wheel has a particle size of 180 meshes.
Optionally, during grinding, the rotating speed of the cubic boron nitride grinding wheel is 2800 r/min-3200 r/min.
Optionally, during grinding, the feed speed of the cubic boron nitride grinding wheel is 450 mm/min-550 mm/min.
Optionally, during grinding, the feed amount of the cubic boron nitride grinding wheel is 0.005 mm-0.02 mm.
Optionally, the rotating speed of the cubic boron nitride grinding wheel is 3000 r/min.
Optionally, before the nickel target blank and the back plate are welded together, the method further includes a step of cleaning the nickel target blank and the back plate.
Optionally, after the turning step and before the grinding step, a step of cleaning the nickel target and the back plate is further included.
Optionally, in the step of welding the nickel target blank and the backing plate together, the nickel target blank and the backing plate are joined together by brazing.
Optionally, during the grinding process, the cubic silicon nitride grinding wheel and the nickel target assembly are cooled by using an emulsion.
In order to solve the above problems, the present invention also provides a processing apparatus for a nickel target assembly, the nickel target assembly including backing plates connected together and a nickel target blank having a purity of 99.99%, the processing apparatus comprising:
a lathe, wherein a cutter of the lathe adopts a cubic boron nitride blade;
the grinding tool of the grinding machine adopts a cubic boron nitride grinding wheel.
The invention has the following advantages:
and welding the back plate and the nickel target blank together to form a nickel target assembly, and machining the nickel target blank in the nickel target assembly, wherein the machining comprises turning and grinding the nickel target blank. By reasonably selecting the lathe blade and strictly controlling the processing parameters, the defects on the surface of the nickel target material during lathe processing are reduced, so that the nickel target material with higher precision is obtained; after the lathe machining is finished, the nickel target material is ground and polished by using a grinding machine and reasonably selecting a grinding tool so as to further reduce the defects on the surface of the nickel target material, so that the nickel target material with high dimensional precision and low surface roughness is obtained, and the nickel target material assembly meeting the sputtering performance is obtained.
Drawings
Fig. 1 is a flow chart illustrating the processing of a nickel target assembly according to an embodiment of the method for processing a nickel target assembly of the present invention.
Fig. 2 is a schematic structural diagram of a nickel target assembly in an embodiment of a method for processing a nickel target assembly according to the present invention.
Fig. 3 is A cross-sectional view along A-O-A of fig. 2.
Detailed Description
The invention aims to provide a processing method and a processing device of a nickel target material assembly, wherein the material of the nickel target material is 4N nickel. The machining method of the nickel target assembly comprises the steps of turning the nickel target in the nickel target assembly, and strictly controlling machining parameters by reasonably selecting a lathe blade so as to reduce the defects on the surface of the nickel target during lathe machining. After the lathe machining is finished, the nickel target material in the nickel target material assembly is ground and polished by using a grinding machine and reasonably selecting a grinding tool so as to further reduce the defects on the surface of the nickel target material, so that the nickel target material with high dimensional precision and low surface roughness is obtained, and the nickel target material assembly meeting the sputtering performance is obtained.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.
In the machining process, it is generally desired to machine a high-precision product in the shortest machining time on the premise of ensuring the service life of a machining device. Therefore, it is necessary to select an appropriate machining tool and machining conditions in consideration of the material, hardness, shape, machining allowance, and performance of the machining device of the workpiece before machining. In the mechanical processing field, the processing conditions are three factors of mechanical processing: rotational speed, feed amount, and feed speed. Wherein,
rotating speed: the number of revolutions of the rotating object in a minute or second is typically measured in r/min or r/s.
Feeding amount: the workpiece or the machining tool is displaced in the direction of the feed movement, typically in mm, with the machining tool per revolution or reciprocation of the workpiece or the machining tool.
Feeding speed: the relative displacement of the workpiece and the working tool in the direction of the feed movement per unit time is usually measured in mm/min.
Fig. 1 is a flowchart illustrating a processing method of a nickel target assembly according to an embodiment of the present invention, and as shown in fig. 1, the processing method of the nickel target assembly includes the following steps:
s1, providing a nickel target blank and a back plate with a plurality of water grooves on one side.
S2, welding the nickel target blank and the back plate together.
And S3, fixing the nickel target material assembly on a lathe, and turning the nickel target material blank to obtain the nickel target material.
And S4, after turning, cleaning the nickel target and the back plate.
And S5, fixing the nickel target material assembly on a grinding machine to grind the nickel target material.
Fig. 2 is A schematic structural view of A nickel target assembly in an embodiment of A method of processing A nickel target assembly according to the present invention, and fig. 3 is A cross-sectional view taken along A-O-A of fig. 2. The processing flow of the nickel target assembly will be described in detail below by combining fig. 1 with fig. 2 and 3.
S1, providing a nickel target blank and a back plate with a plurality of water grooves on one side.
The material of the nickel target blank is 4N nickel (i.e., the purity is 99.99%), the material of the nickel target blank in this embodiment also includes copper, and the nickel target blank in other embodiments may include other metals. The shape of the nickel target blank 10 may be any of circular, rectangular, circular, conical, or other similar shapes (including regular and irregular shapes) depending on the application environment, the actual requirements of the sputtering apparatus. The preferred scheme is circular, and its diameter size is to add 3 mm's machining allowance on design size, and its thickness size is to add 1 mm's machining allowance on design size. The purpose of the machining allowance is to provide a relatively large machining space for the nickel target blank to obtain a satisfactory nickel target assembly.
The back plate 11 is formed by machining to size to meet the application requirements and its material may be copper or a copper alloy. The shape of the backing plate 11 may be any of circular, rectangular, annular, conical or other similar shapes (including regular and irregular shapes) depending on the application environment, the actual requirements of the sputtering apparatus. As shown in fig. 2, the preferred embodiment is circular. When performing the sputtering process, the nickel target assembly is assembled to the sputtering base station, and the working environment of the nickel target assembly is relatively harsh, for example, it is operated at a relatively high temperature, such as 300 to 500 ℃. In addition, one side of the nickel target material component is strongly cooled by cooling water, and the other side of the nickel target material component is in a high vacuum environment of 10-9Pa, so that a large pressure difference is formed on the two opposite sides of the nickel target material component, and the nickel target material component is bombarded by various particles in a high-voltage electric field and a magnetic field. Therefore, the back plate in the nickel target assembly plays a role in supporting the nickel target on one hand and has the effect of conducting heat on the other hand. The temperature in the sputtering chamber is very high, because the back plate 11 can be connected with the nickel target blank 10 by welding, in order to prevent the nickel from catalyzing the melting of the solder between the back plate and the nickel target blank when the temperature reaches about 180 ℃, so as to affect the sputtering result of the nickel target assembly, a plurality of water tanks 12 with large depth can be arranged on the back plate 11 to fully cool the nickel target 10. The water groove 12 on the back plate 11 can be formed by a machining method, such as milling. Therefore, the thickness of the back plate 11 at the position of the water tank 12 is small. As shown in fig. 2, the sink 12 may be annular or circular in shape.
S2, welding the nickel target blank and the back plate together.
To achieve better bonding of the nickel target blank 10 and the backing plate 11, the pre-bonded surfaces of the nickel target blank 10 and the backing plate 11 may be machined before welding to achieve the necessary smoothness (i.e., surface roughness) of the pre-bonded surfaces. Then, the nickel target material blank 10 and the backing plate 11 are cleaned. There are various methods for cleaning the nickel target material 10 and the backing plate 11, and one of them is cleaning with an organic solvent. The organic solvent may be any of alcohol, Isobutanol (IBA), Isopropanol (IPA), or isopropyl alcohol (IPB).
The nickel target blank 10 and the backing plate 11 can be welded together using a brazing process, although the nickel target blank 10 and the backing plate 11 can be welded together in other ways.
And S3, fixing the nickel target material assembly on a lathe, and turning the nickel target material blank to obtain the nickel target material.
The back plate 11 in the nickel target assembly is clamped by a lathe fixture, and then the nickel target blank 10 is turned by a turning tool. As shown in fig. 3, since the depth of the water tank 12 in the back plate 11 is large, the thickness of the back plate 11 at the position corresponding to the water tank 12 is thin. When the nickel target blank 10 is turned, especially when the nickel target blank is machined to a position near the water tank 12, the rigidity and the mechanical strength of the nickel target assembly at the position are low, and the stress at the position is low, so that the phenomenon of tool vibration is easy to occur. The vibration cutter can seriously affect the processing precision of a processed part, so the phenomenon of vibration of the cutter needs to be avoided as much as possible in the processing process.
The inventor finds that the phenomenon of cutter vibration can be avoided or reduced by reasonably selecting the cutter and adjusting the processing parameters. Therefore, Cubic Boron Nitride (CBN) inserts were selected for the tool of the lathe. The cubic boron nitride insert has many advantages, such as high hardness, so that a large rotation speed can be selected during lathe turning to improve the machining efficiency, and the cubic boron nitride insert has small deformation at the moment, so that a product with high machining precision can be obtained, namely the obtained product has high dimensional precision and low surface roughness.
The turning process of the nickel target assembly comprises rough machining and finish machining. First, the nickel target blank 10 in the nickel target assembly is roughly processed. At this time, the rotation speed of the lathe spindle is 300r/min to 500r/min, and the feed amount is 0.3mm to 0.5 mm. The nickel target blank 10 in the nickel target assembly is then finish machined. At the moment, the rotating speed of the lathe spindle is 250 r/min-300 r/min, and the feeding amount is 0.01 mm-0.1 mm. Of course, after rough machining and before finish machining, the machining parameters can be adjusted accordingly to perform semi-finish machining on the nickel target blank 10 in the nickel target assembly. After turning, the precision of the nickel target blank 10 in the nickel target assembly is greatly improved, thereby obtaining the nickel target 10.
And S4, after turning, cleaning the nickel target and the back plate.
After turning, turning chips can be attached to the nickel target assembly, and the nickel target 10 and the back plate 11 can be cleaned in order to avoid the influence of the turning chips on the subsequent machining precision of the nickel target assembly. There are various methods for cleaning the nickel target 10 and the backing plate 11, and one of the methods is to clean the nickel target and the backing plate with an organic solvent. The organic solvent may be any of alcohol, Isobutanol (IBA), Isopropanol (IPA), or isopropyl alcohol (IPB).
And S5, fixing the nickel target material assembly on a grinding machine to grind the nickel target material.
After the step S3, the accuracy of the nickel target surface is improved, but some defects still remain, and the surface roughness, i.e., the smoothness, cannot meet the requirements of the sputtering process. Further processing of the nickel target 10 in the nickel target assembly is required to improve the smoothness of the nickel target surface.
And further processing the nickel target material in the nickel target material assembly by using a grinding machine. The grinding tool in the grinding machine is a cubic boron nitride grinding wheel with the granularity of 180 meshes. The cubic boron nitride grinding wheel has the advantages of high-speed grinding processing, high processing efficiency and high processing precision, thereby improving the processing quality of the surface of a product. The nickel target material 10 is ground by utilizing the cubic boron nitride grinding wheel, at the moment, the rotating speed of the cubic boron nitride grinding wheel can be 2800 r/min-3200 r/min, and the feeding speed can be 450 mm/min-550 mm/min.
The rotating speed of the cubic boron nitride grinding wheel has great influence on the service life of the cubic boron nitride grinding wheel. If the rotating speed is too high, the temperature of the cubic boron nitride grinding wheel is rapidly increased due to friction, so that the service life of the cubic boron nitride grinding wheel is greatly reduced; if the rotation speed is too low, the processing efficiency is lowered. Therefore, when the rotating speed is 3000r/min, the service life of the cubic boron nitride grinding wheel and the processing efficiency can be well balanced.
The feed is a critical factor in determining the surface quality of the workpiece. If the feed amount is too small, the grinding surface of the cubic boron nitride grinding wheel is abraded greatly, so that the service life of the cubic boron nitride grinding wheel is greatly reduced; if the feeding amount is too large, the defect of cracking of the nickel target material assembly can be caused. Therefore, the feed amount is selected from 0.005mm to 0.02 mm.
In addition, in order to reduce the deformation of the cubic boron nitride grinding wheel and the nickel target material component caused by friction temperature rise so as to reduce the machining precision of the nickel target material, and in order to prolong the service life of the cubic boron nitride grinding wheel, the emulsion is used for cooling the cubic boron nitride grinding wheel and the nickel target material component in the grinding process so as to reduce the deformation of the cubic boron nitride grinding wheel and the nickel target material component, thereby improving the machining precision and prolonging the service life of the cubic boron nitride grinding wheel.
In summary, the processing method of the nickel target assembly of the invention has the following advantages:
and welding the back plate and the nickel target blank together to form a nickel target assembly, and machining the nickel target blank in the nickel target assembly, wherein the machining comprises turning and grinding the nickel target blank. By reasonably selecting the lathe blade and strictly controlling the processing parameters, the defects on the surface of the nickel target material during lathe processing are reduced, so that the nickel target material with higher precision is obtained; after the lathe machining is finished, the nickel target material is ground and polished by using a grinding machine and reasonably selecting a grinding tool so as to further reduce the defects on the surface of the nickel target material, so that the nickel target material with high dimensional precision and low surface roughness is obtained, and the nickel target material assembly meeting the sputtering performance is obtained.
Correspondingly, the invention also provides a processing device of the nickel target assembly, the nickel target assembly comprises back plates which are connected together and a nickel target blank with the purity of 99.99 percent, and the processing device comprises:
a lathe, wherein a cutter of the lathe adopts a cubic boron nitride blade;
the grinding tool of the grinding machine adopts a cubic boron nitride grinding wheel.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (18)
1. A method for processing a nickel target component is characterized by comprising the following steps:
providing a back plate with a plurality of water tanks on one side and a nickel target blank with the purity of 99.99 percent;
welding the nickel target blank and the back plate together;
fixing the nickel target material assembly on a lathe to perform turning processing on the nickel target material blank to obtain a nickel target material;
and fixing the nickel target material assembly on a grinding machine to grind the nickel target material.
2. The machining method according to claim 1, wherein the tool of the lathe is a cubic boron nitride insert.
3. The machining method according to claim 2, wherein the turning machining includes rough machining and finish machining after the rough machining.
4. The machining method according to claim 3, wherein a spindle rotation speed of the lathe is 300 to 500r/min during the rough machining.
5. The machining method according to claim 3, wherein a feed amount of the lathe is 0.3mm to 0.5mm when the rough machining is performed.
6. The machining method according to claim 3, wherein the rotation speed of the spindle of the lathe is 250 to 300r/min during the finish machining.
7. The machining method according to claim 3, wherein a feed amount of the lathe is 0.01mm to 0.1mm when the finish machining is performed.
8. The machining method according to claim 1, wherein the grinding tool of the grinding machine is a cubic boron nitride grinding wheel.
9. The method of machining according to claim 8, wherein the cubic boron nitride grinding wheel has a grain size of 180 mesh.
10. The machining method according to claim 9, wherein the rotational speed of the cubic boron nitride grinding wheel during the grinding is 2800r/min to 3200 r/min.
11. The machining method according to claim 9, wherein a feed speed of the cubic boron nitride grinding wheel during the grinding is 450mm/min to 550 mm/min.
12. The machining method according to claim 9, wherein the feed amount of the cubic boron nitride grinding wheel during the grinding is 0.005mm to 0.02 mm.
13. The machining method according to claim 10, wherein the rotational speed of the cubic boron nitride grinding wheel is 3000 r/min.
14. The method of claim 1, further comprising cleaning the nickel target blank and backing plate prior to welding the nickel target blank and backing plate together.
15. The machining method according to claim 1, further comprising a step of cleaning the nickel target and the backing plate after the step of turning and before the step of grinding.
16. The method of claim 1, wherein in the step of welding the nickel target blank and the backing plate together, the nickel target blank and the backing plate are joined together by brazing.
17. The method according to claim 8, wherein the grinding is performed by cooling the cubic silicon nitride grinding wheel and the nickel target assembly with an emulsion.
18. A processing device of a nickel target assembly is characterized in that the nickel target assembly comprises back plates connected together and a nickel target blank with the purity of 99.99 percent, and the processing device comprises:
a lathe, wherein a cutter of the lathe adopts a cubic boron nitride blade;
the grinding tool of the grinding machine adopts a cubic boron nitride grinding wheel.
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| CN201110321309.7A CN102501045B (en) | 2011-10-20 | 2011-10-20 | Method and device for processing nickel target component |
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| CN201110321309.7A CN102501045B (en) | 2011-10-20 | 2011-10-20 | Method and device for processing nickel target component |
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| CN115256058A (en) * | 2022-08-01 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Machining method of silicon carbide target |
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| CN104668883A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Processing method of target module sputtering surface |
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| CN108672720A (en) * | 2018-07-27 | 2018-10-19 | 宁波江丰电子材料股份有限公司 | A kind of method for turning of high-purity tantalum target |
| CN108977786A (en) * | 2018-09-14 | 2018-12-11 | 合肥瀚鹏新能源有限公司 | A kind of magnetic control spattering target water route backboard |
| CN112846651A (en) * | 2020-12-25 | 2021-05-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
| CN112846651B (en) * | 2020-12-25 | 2022-10-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
| CN112917100A (en) * | 2021-01-27 | 2021-06-08 | 宁波江丰电子材料股份有限公司 | Processing method of nickel target material assembly |
| CN113400103A (en) * | 2021-06-18 | 2021-09-17 | 宁波江丰电子材料股份有限公司 | Mechanical processing method of silicon target material |
| CN114686827A (en) * | 2022-04-15 | 2022-07-01 | 广东江丰电子材料有限公司 | LCD target material and preparation method thereof |
| CN115256058A (en) * | 2022-08-01 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Machining method of silicon carbide target |
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