CN102485952B - Vapourizing unit and gasification method - Google Patents
Vapourizing unit and gasification method Download PDFInfo
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- CN102485952B CN102485952B CN201010575296.1A CN201010575296A CN102485952B CN 102485952 B CN102485952 B CN 102485952B CN 201010575296 A CN201010575296 A CN 201010575296A CN 102485952 B CN102485952 B CN 102485952B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a kind of vapourizing unit and gasification method, described vapourizing unit comprises heating cavity, and the internal surface of described heating cavity has microstructure, and described microstructure treats the heating surface area of gasifying liquid for increasing, and promotes the generation of vaporization nucleus.Vapourizing unit of the present invention, when heating liquid, has lower energy waste, higher heat transfer efficiencies and stronger security.
Description
Technical field
The present invention relates to a kind of vapourizing unit and use described vapourizing unit to carry out the method for vaporizing.
Background technology
In many solar cell application technology, thin-film solar cells because of pollution-free, less energy consumption, with low cost, can the series of advantages such as scale operation, be widely used in Aeronautics and Astronautics and daily life.Common thin-film solar cells comprises: amorphous silicon film solar battery, copper indium gallium selenide film battery and cadmium telluride thin-film battery.Be in the Chinese invention patent file of 101027749 and 101226967 at publication number, the formation method of more how above-mentioned solar film battery can be found.
In the manufacture of thin-film solar cells, the deposition of transparent conductive oxide film is important process procedure, and described transparent conductive oxide film is for making the electrode of thin-film solar cells, and usual described transparent conductive oxide is zinc oxide.In zinc-oxide film depositing operation, the zinc ethyl (DEZ) of gaseous state can participate in reaction as a kind of gas of key.But DEZ is in a liquid state at normal temperatures, therefore need first in vapourizing unit, liquid DEZ to be heated into gaseous state, and the vapour pressure produced when utilizing it to vaporize, by described gaseous state DEZ by gas pipe line press-in reaction chamber.
DEZ will decompose when being heated to 70 DEG C and discharge amount of heat, therefore when carrying out DEZ vaporization, needs strict its vaporization temperature that controls to prevent the accident of blasting.But too low vaporization temperature, will the vaporization efficiency of DEZ be reduced, and enough vapour pressures cannot be ensured, DEZ flows decrease can be caused, and then cause deposition of zinc oxide rate reduction, greatly affect production efficiency.
Therefore, how to improve the heat transfer efficiencies of vapourizing unit, under the prerequisite meeting vapour pressure requirement, quickly and safely liquid DEZ is vaporized with alap temperature, become the problem needing solution badly of DEZ gasification process.
Summary of the invention
The object of this invention is to provide a kind of vapourizing unit and gasification method, to improve the efficiency of vaporization, reduce the energy waste in vaporescence, and reduce the danger in vaporescence.
Vapourizing unit provided by the invention, comprises heating cavity, and the internal surface of described heating cavity has microstructure, and described microstructure treats the heating surface area of gasifying liquid for increasing, and promotes the generation of vaporization nucleus.
Preferably, the internal surface of described heating cavity comprises side and bottom surface, and described side has described microstructure.Described bottom surface has described microstructure.
Optionally, described microstructure is groove, hole or projection.The cross section of described groove is trilateral, semicircle, trapezoidal or rectangle.The cross section of described groove also can be V-shaped, B font, M shape or W shape.
Preferably, the groove angle of described V-shaped is not more than 90 °.
Preferably, the groove angle of described V-shaped is not more than 60 °.
Preferably, the groove angle of described V-shaped is not more than 30 °.
Optionally, described channel shaped is formed on described side, and described trilateral is right-angle triangle, and one square edge is parallel with described bottom surface. and another square edge is parallel with described side.Further, described right-angle triangle is isosceles right triangle.
Optionally, described channel shaped is formed on described side, and described trilateral is less than or equal to 90 degree near the limit of described bottom surface and the angle of described side.
Preferably, the opening overall dimension of described groove is not more than 3mm and is not less than 0.5mm.Preferred further, the opening overall dimension of described groove is not more than 2mm and is not less than 1mm.Preferably, the degree of depth of described groove is not more than 3mm and is not less than 0.5mm.
Optionally, described channel shaped is formed on described side, and described groove can be thread groove.
Optionally, the bearing of trend of described groove is parallel with described bottom surface, or with described plane perpendicular, angle can also be had with described bottom surface.Described angle is more than or equal to 3 ° and is less than or equal to 60 °; Preferred further, described angle is more than or equal to 20 ° and is less than or equal to 50 °.
Optionally, resistive heater is provided with in the chamber wall of described heating cavity.The chamber wall of described heating cavity is outside equipped with silicon rubber heater.The end face of described heating cavity has liquid feed valve and air outlet valve, and described liquid feed valve is connected with liquid source of supply, and described air outlet valve is connected with the supply line of production unit reaction cavity.The end face of described heating cavity has weather gauge.Also there is liquid level detector in described heating cavity.
Present invention also offers a kind of gasification method using above-mentioned vapourizing unit, comprising: in heating cavity, inject liquid to be vaporized, detect the liquid level of described liquid; When described liquid level arrives pre-implant position, stop injecting liquid; Heating cavity is heated to initial target temperature.
Preferably, described pre-implant position be lower than heating cavity total height 1/2 position.
Liquid described to be vaporized is liquid DEZ, and described initial target temperature is less than 70 DEG C.The described initial target temperature that is heated to adopts substep successively to heat up.
Described gasification method also comprises Offered target pressure, detects the vapour pressure in heating cavity, and the temperature in adjustment heating cavity, makes described vapour pressure equal target, pressure.Temperature in described adjustment heating cavity comprises: keep vapour pressure to be not less than target, pressure, reduce the temperature in heating cavity.Temperature in described adjustment heating cavity also comprises: if vapour pressure is less than target, pressure, under keeping the temperature in heating cavity to be less than the prerequisite of 70 DEG C, improves the temperature in heating cavity.
Compared with prior art, vapourizing unit tool of the present invention has the following advantages:
The internal surface of the heating cavity of described vapourizing unit has microstructure, and further, side and the bottom surface of described internal surface all have microstructure, can the area of maximum using internal surface.When heating liquid, described microstructure can increase the heating surface area of liquid, and promotes the generation of vaporization nucleus, improves heat transfer efficiencies.
Described microstructure can be groove, and the cross section of described groove can be trilateral, V-shaped etc.; The groove angle of described V-shaped is not more than 90 °; Further, 60 ° are not more than; More preferred, be not more than 30 °.The capillary action effect of the less described groove of angle is better.
The cross section of the groove of described side is trilateral, and described trilateral is less than or equal to 90 ° near the limit of described bottom surface and the angle of described side, can avoid the liquid spill in groove, contributes to strengthening wicking action.
The opening size of described groove is not more than 3mm and is not less than 0.5mm, further preferably, is not more than 2mm and is not less than 1mm; The degree of depth of described groove is not more than 3mm and is not less than 0.5mm.Ensure the capillary effect of groove on the one hand, being convenient to liquid enters groove on the other hand, avoids producing space.
The bearing of trend of the groove of described side and bottom surface form angle, and described angle is more than or equal to 3 ° and is less than or equal to 60 °; Preferred further, described angle is more than or equal to 20 ° and is less than or equal to 50 °.While the speed improving liquid-soaked groove and extend along groove, the liquid in groove can be avoided to be subject to excessive action of gravity and to affect extended height, be conducive to the heating surface area increasing liquid as much as possible.
Gasification method of the present invention, tool has the following advantages: when fluid injection, and the liquid level injecting liquid, lower than 1/2 of heating cavity total height, has been reserved the spatial accommodation of bog, can have been played shock absorption to described bog; In vaporescence, the temperature in real time in monitoring heating cavity and vapour pressure, adjust described temperature according to described vapour pressure, and ensure the security of vaporizing liquid process.
Accompanying drawing explanation
Fig. 1 is the structural representation of vapourizing unit of the present invention;
Fig. 2 is the schematic top plan view in the cross section of C-C shown in Fig. 1;
Fig. 3 is the microstructure diagrammatic cross-section of the present invention's specific embodiment;
Fig. 4 is the microstructure diagrammatic cross-section of another specific embodiment of the present invention;
Fig. 5 is the microstructure diagrammatic cross-section of another specific embodiment of the present invention;
Fig. 6 is the extension trend schematic diagram of the side groove of the present invention's specific embodiment;
Fig. 7 is the schematic flow sheet of gasification method of the present invention;
Fig. 8 is the schematic diagram of low-pressure chemical vapor deposition system of the present invention.
Embodiment
According to background technology content, because DEZ decomposition temperature is lower, therefore in the vaporescence of DEZ, between vaporization efficiency and security, there is contradiction.How to improve the heat transfer efficiencies in vaporescence, become the key solving above-mentioned contradiction.The present invention then provides a kind of vapourizing unit, heating cavity internal surface arranges microstructure to increase the heating-surface area of liquid, and promotes the generation of vaporization nucleus, reduces energy waste during heating, improves heat transfer efficiencies.
Fig. 1 is the structural representation of vapourizing unit of the present invention, and Fig. 2 is the schematic top plan view in the cross section of C-C shown in Fig. 1, and shown in composition graphs 1 and Fig. 2, vapourizing unit of the present invention comprises: heating cavity 10, is arranged at the well heater 20 of described heating cavity 10 outer wall.Wherein, the internal surface of described heating cavity 10 has microstructure.Described well heater 20 is silicon rubber heater, and the chamber wall outside surface of heating cavity 10 is close to by silicon rubber.After injecting liquid in heating cavity 10, described microstructure can increase the contact area of the internal surface of liquid and heating cavity 10.Because well heater 20 heats liquid indirectly by the sidewall of heating cavity 10 and bottom, chamber wall plays the effect of heat trnasfer, and therefore above-mentioned microstructure equivalence increases the heating surface area of liquid.
The microstructure of heating cavity internal surface is except the aforementioned contact area that can increase liquid and heating cavity inwall pointed out, improve outside heat transfer efficiencies, also there is following features: countless tiny intensive microstructures greatly can promote the generation of vaporization nucleus, liquid is made to produce a large amount of bubbles when vaporizing, the spilling of above-mentioned bubble can cause the flow-disturbing of liquid, liquid internal is heated more even, thus considerably increase Heat transfer coefficient, improve boil-off rate, and it is stable to heat up, reduce the possibility of local superheating, there is stronger security.
Again as shown in Figure 1, described microstructure is at least arranged on the side 10a of the internal surface of described heating cavity 10.The microstructure be positioned on described side 10a has wicking action, certain hour is left standstill after injecting liquid in heating cavity 10, described liquid and microstructure fully infiltrate, described liquid can extend along the microstructure on the 10a of side, thus increase the contact area of the internal surface of described liquid and described heating cavity 10 further, and then increase heating surface area, improve boil-off rate.As shown in Figure 2, described microstructure can also be arranged at the bottom surface 10b of described internal surface, to utilize the inner surface area of heating cavity 10 substantially.
Alternatively, resistive heater or other heater elements in the chamber wall of described heating cavity 10, can be provided with, described heating cavity 10 is heated; Or while described well heater 20 is set outside described heating cavity 10, resistive heater or other heater elements can be provided with in the chamber wall of described heating cavity 10, to strengthen the heats of cavity further.
In addition, described vapourizing unit also comprises: be arranged at the liquid feed valve 101 at heating cavity 10 top, air outlet valve 102 and weather gauge 103, is arranged at the liquid level detector 104 in heating cavity 10.Described liquid feed valve 101 is connected with the liquid feed line in feed flow source, gasifying liquid is treated for injecting in heating cavity 10, described air outlet valve 102 is connected with the gas supply pipeline of reaction cavity, and for exporting the gas after vaporization, described weather gauge 103 is for measuring the vapour pressure in heating cavity 10.Due in vaporescence, gas accumulation is in the top of heating cavity 10, its vapour pressure directly determines the flow velocity that gas is discharged, therefore described weather gauge 103 and air outlet valve 102 are all arranged at the top of heating cavity 10, contribute to the size according to vapour pressure, adjustment Heating temperature, accurately controls the flow velocity of gas.Described liquid level detector 104 is for detecting the liquid level of liquid in heating cavity 10.
During vapourizing unit work, the liquid of injection is not be full of whole heating cavity, and need to retain certain space and hold gas, when the gas produced when vaporizing is discharged by air outlet valve 102, shock absorption can be played in above-mentioned space.As a preferred scheme, the liquid level of vapourizing unit institute load bearing fluid is no more than 1/2 of heating cavity total height, namely retains volume over half and holds the gas after vaporizing.
In sum, provide identical add the prerequisite of heat under, vapourizing unit of the present invention is compared to the vapourizing unit of smooth inner wall, due to the relative raising of the inner surface area with liquid comes into contact, heated liquid is more even, there is lower energy waste, higher heat transfer efficiencies, and the security that lower temperature of superheat is brought.Be suitable for carrying out the gasification process that such as liquid DEZ etc. is easy to the liquid of low-temperature decomposition blast.
Below the microstructure being arranged at vapourizing unit heating cavity internal surface of the present invention is described further.Microstructure of the present invention can be groove, hole or projection.The cross section of described groove can be rectangle, trilateral, semicircle, trapezoidal, can also be V-shaped, B font, M shape or W shape etc.The cross-sectional shape of groove and the selection of size need the physics of foundation liquid, chemical property and vaporization temperature synthetically to consider.If the opening of groove and depth dimensions are too large, capillary DeGrain; And opening or depth dimensions are too little, be then unfavorable for that liquid enters groove, the infiltrating time of needs is longer, and easily in groove, produces space, affects heat transfer effect, and then reduces boil-off rate.As better selection, the opening size of described groove is not more than 3mm and is not less than 0.5mm, further preferably, is not more than 2mm and is not less than 1mm; The degree of depth of described groove is not more than 3mm and is not less than 0.5mm.
Fig. 3 is the microstructure diagrammatic cross-section of the present invention's specific embodiment, shows the section shape of the side 10a of heating cavity and the microstructure of bottom surface 10b.As shown in Figure 3, the microstructure of described side 10a and bottom surface 10b is groove, and the cross section of described groove is V-shaped.Under the prerequisite that opening size is fixing, the groove angle η of described V-shaped is less, and its degree of depth is darker, and capillary effect is also better, but difficulty of processing is also higher during fabrication.As better selection, the groove angle η of described V-shaped is not more than 90 °; Preferred further, be not more than 60 °; More preferred, be not more than 30 °.In the present embodiment, the groove of described side 10a and bottom surface 10b, opening size d1 is 2mm, and the groove angle η of V-shaped is 30 °.
Fig. 4 is the microstructure diagrammatic cross-section of another specific embodiment of the present invention.As shown in Figure 4, the microstructure of described side 10a and bottom surface 10b is groove, and the cross section of described groove is trilateral.Concrete, on the groove of side 10a, described trilateral is less than or equal to 90 ° near the angle of the limit of described bottom surface 10b and described side 10a, can avoid the liquid spill in groove, contributes to strengthening wicking action.In the present embodiment, the opening size d2 of the groove on the 10a of side is 3mm, and described is 75 ° near the limit of bottom surface 10b and the angle theta of side 10a.On the groove of bottom surface 10b, described trilateral is isosceles triangle, and apex angle ss can get 0 ° to a certain special angle in 90 °.Preferably, described apex angle ss is 60 °, makes the cross section of the groove on described bottom surface 10b be equilateral triangle, and can obtain the maximum contact area with liquid at narrow bottom surface 10b, the opening size d3 of the groove on described bottom surface 10b is 2mm.
Fig. 5 is the microstructure diagrammatic cross-section of another specific embodiment of the present invention.As shown in Figure 5, the microstructure of described side 10a and bottom surface 10b is groove, and the cross section of described groove is also trilateral.Concrete, on the groove of side 10a, described trilateral is right-angle triangle, and wherein a square edge is parallel with bottom surface 10b, plays the effect of load bearing fluid; Another square edge is then parallel with side 10a; And base angle is also the angle of the square edge parallel with bottom surface 10b and hypotenuse in described right-angle triangle, 0 ° can be got to a certain special angle in 90 °.Under the prerequisite that opening size is fixing, when described base angle gets 45 °, described right-angle triangle is isosceles right triangle, and described groove can be made to obtain maximum sectional area, and also namely described groove can hold the liquid of maximum volume.In the present embodiment, the cross section of the groove on described side 10a is the opening size of isosceles right triangle, groove, and the length of side L1 of also namely parallel with side 10a square edge is 2mm; The cross section of the groove on described bottom surface 10b is also equilateral triangle, and the opening size L2 of the groove on described bottom surface 10b is 2mm.
Above-described embodiment discloses the section shape of microstructure of the present invention, concrete, discloses the section shape of described groove, is described further below to the bearing of trend of the groove being formed at vapourizing unit side.
Described channel shaped is formed on described side, and the bearing of trend of described groove can be parallel with described bottom surface or vertical, also can form angle with bottom surface.Fig. 6 is the extension trend schematic diagram of the groove on side 10a described in the present invention's specific embodiment, and as shown in Figure 6, described groove can be thread groove, and the angle that its bearing of trend and bottom surface are formed is λ.Generally for and improve liquid-soaked groove and the speed along groove extension when leaving standstill, avoid the liquid gravitate in groove excessive simultaneously and affect extended height, increasing the heating surface area of liquid as much as possible; Above-mentioned included angle X can not be excessive also unsuitable too small.As better selection, described included angle X is more than or equal to 3 ° and is less than or equal to 60 °; Preferred further, described included angle X is more than or equal to 20 ° and is less than or equal to 50 °.
Use above-mentioned vapourizing unit, present invention also offers the gasification method using described vapourizing unit, concrete, as shown in Figure 7, the basic procedure of gasification method of the present invention comprises:
Step S101: inject in heating cavity and treat gasifying liquid, detect the liquid level of described liquid; When described liquid level arrives pre-implant position, stop injecting liquid;
Concrete, by the liquid feed valve at heating cavity top, in heating cavity, inject liquid, and retain a constant volume, such as, make described pre-implant position lower than 1/2 of heating cavity total height.Optionally, before the operation of fluid injection first, in order to make the gaseous constituent of vaporization more pure, can air outlet valve be passed through, first heating cavity be vacuumized, in order to avoid be mixed into foreign gas.
Step S102: leave standstill the microstructure making described liquid-soaked heating cavity internal surface, waits for liquid level stabilizing;
Because side microstructure has wicking action, liquid is after stopping is injected, and its liquid level may also can promote.Therefore can leave standstill certain hour, make liquid fully infiltrate the microstructure of the internal surface of heating cavity, until liquid level stabilizing.
Step S103: heating cavity is heated to initial target temperature.
Before vaporization, first according to the chemical property treating gasifying liquid, set an initial target temperature, such as, described in when gasifying liquid is DEZ, described initial target temperature should lower than the decomposition temperature of liquid DEZ; Then use well heater to heat heating cavity, temperature-rise period should be not too fast, in order to avoid heated liquid is uneven, and local superheating.Directly initial target temperature can be heated to lentamente, also gradation described initial target temperature can be progressively heated to.
It is pointed out that along with liquid starts vaporization and by the outside delivering gas of air outlet valve, its liquid level also can reduce gradually, and be heated in heat-processed and unevenly always exist, the vapour pressure therefore in heating cavity is in the state of change.Pointed by foregoing teachings, vapour pressure directly determines the gas flow rate of air valve gas, in order to obtain stable vapour pressure, can also carry out real-time inching when vaporizing to the temperature in heating cavity.
In order to further illustrate gasification method of the present invention, the following providing the low-pressure chemical vapor deposition system that applies vapourizing unit of the present invention, its apparatus structure and technical process are described in detail.Concrete, described low-pressure chemical vapor deposition system is for making the electrode of thin-film solar cells; Further, described low-pressure chemical vapor deposition system is for depositing zinc oxide film on the glass substrate of thin-film solar cells, and described vapourizing unit is used for vaporize liquid DEZ.
Fig. 8 is the schematic diagram of low-pressure chemical vapor deposition system of the present invention, and described low-pressure chemical vapor deposition system comprises:
DEZ liquid-supply unit 201, for storing liquid DEZ, and by pump line delivering liquid DEZ;
DEZ vaporization unit 202, i.e. vapourizing unit of the present invention, its liquid feed valve is connected with the pump line of DEZ liquid-supply unit 201, receives liquid DEZ, and then vaporize described liquid DEZ, and its air outlet valve exports DEZ gas;
Low-pressure chemical vapor deposition reaction chamber 203, for carrying out chemical vapour deposition, depositing zinc oxide film on described glass substrate.Described low-pressure chemical vapor deposition reaction chamber 203 is connected by the air outlet valve of pneumatic tube with DEZ vaporization unit 202, receives DEZ gas, participates in the deposition reaction of zinc-oxide film.
It is pointed out that the above equipment component only listing low-pressure chemical vapor deposition system, so that gasification method of the present invention to be described, and not restriction is made to the embody rule of vapourizing unit of the present invention and assembling.
Shown in composition graphs 7 and Fig. 8, before carrying out zinc-oxide film depositing operation, first vacuum-treat is carried out to equipment pipeline, ensure the vacuum tightness in each transfer line and reaction chamber, to avoid being mixed into foreign gas, affect DEZ vaporization or zinc-oxide film depositing operation.Can also first use the inactive gas of the chemical property such as helium, dredging of air-flow is carried out to equipment pipeline, discharge residual reactant gases.
Keep the air outlet valve of DEZ vaporization unit 202 to close, open described liquid feed valve, use DEZ liquid-supply unit 201 to inject liquid DEZ in the heating cavity of DEZ vaporization unit 202.The liquid level of described liquid DEZ is no more than 1/2 of heating cavity total height, at least remains the cavity volume of half for holding DEZ gas.When fluid injection, use liquid level detector to detect the height of liquid level, after the liquid level of described liquid DEZ arrives predetermined injection phase, close liquid feed valve, leave standstill certain hour until the liquid level stabilizing of liquid DEZ, make liquid DEZ fully infiltrate the microstructure of described heating cavity internal surface.
The well heater of DEZ vaporization unit 202 is used to heat the liquid DEZ in heating cavity, be for example temperature rank with 3 DEG C from normal temperature, carry out the heating of substep, to avoid occurring larger temperature fluctuation, finally make the temperature in heating cavity slowly stably rise to initial target temperature T
0.Described initial target temperature T
0be less than 70 DEG C, such as 58 DEG C, 60 DEG C, 62 DEG C, 65 DEG C etc.
Along with liquid DEZ progressively vaporizes, vapour pressure in heating cavity also progressively raises, after described vapour pressure rises to target, pressure, open the air outlet valve of DEZ vaporization unit 202, under vapour pressure in heating cavity drives, the DEZ of gaseous state, along gas pipe line, inputs in low-pressure chemical vapor deposition reaction chamber 203.
After being full of DEZ gas and water vapour in low-pressure chemical vapor deposition reaction chamber 203, carry out reacting to form zinc-oxide film.
In above-mentioned technical process, in order to ensure the carrying out that the deposition reaction of zinc-oxide film is stable, needing to keep DEZ gas flow rate to stablize, also namely keeping the vapour pressure in the heating cavity of DEZ vaporization unit 202 to stablize.Weather gauge in the heating cavity of DEZ vaporization unit 202 measures the vapour pressure of described DEZ gas in real time, in vaporescence, described vapour pressure and target, pressure can be compared, carries out inching, specifically comprise the temperature in heating cavity:
If the vapour pressure in heating cavity is greater than target, pressure, then can closes the heat of well heater or reduction transmission, the temperature in heating cavity is reduced.In order to ensure the flow velocity of DEZ gas, usually under maintenance vapour pressure is not less than the prerequisite of target, pressure, the temperature in heating cavity should be reduced as much as possible.
If the vapour pressure in heating cavity is less than target, pressure, then the heat needing increase well heater to transmit, makes the temperature in heating cavity raise.For the consideration of security, when raising the temperature in heating cavity, 70 DEG C should be avoided exceeding, and should heat up slowly, to avoid the overheated decomposition temperature more than DEZ of local temperature, and produce dangerous.
Disclose as above with preferred embodiment although the present invention is own, the present invention is not defined in this.Except liquid DEZ, vapourizing unit of the present invention can also be used for other liquid of vaporizing, and is assemblied in corresponding device systems, such as metal oxide vapor phase deposition system etc.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (27)
1. a vapourizing unit, comprise heating cavity, it is characterized in that, described vapourizing unit is used for carrying out DEZ vaporization, the vapourizing unit that heat transfer efficiencies is high by adopting, internal liquid is heated evenly reduces the danger in vaporescence, the internal surface of described heating cavity has microstructure, and described microstructure treats the heating surface area of gasifying liquid for increasing, and promotes the generation of vaporization nucleus;
The internal surface of described heating cavity comprises side and bottom surface, and described side has described microstructure;
Described microstructure is groove, and the opening size of described groove is not more than 3mm and is not less than 0.5mm, and the degree of depth of described groove is not more than 3mm and is not less than 0.5mm;
Described channel shaped is formed on described side, and described groove is thread groove, to promote the generation of the nucleus of boiling, causes the flow-disturbing of liquid, thus it is more even that liquid internal is heated, and reduces the possibility of local superheating.
2. vapourizing unit as claimed in claim 1, it is characterized in that, described bottom surface has described microstructure.
3. vapourizing unit as claimed in claim 1, it is characterized in that, the cross section of described groove is trilateral, semicircle, trapezoidal or rectangle.
4. vapourizing unit as claimed in claim 1, it is characterized in that, the cross section of described groove is V-shaped, B font, M shape or W shape.
5. vapourizing unit as claimed in claim 4, it is characterized in that, the groove angle of described V-shaped is not more than 90 °.
6. vapourizing unit as claimed in claim 4, it is characterized in that, the groove angle of described V-shaped is not more than 60 °.
7. vapourizing unit as claimed in claim 4, it is characterized in that, the groove angle of described V-shaped is not more than 30 °.
8. vapourizing unit as claimed in claim 3, it is characterized in that, described channel shaped is formed on described side, and described trilateral is right-angle triangle, and one square edge is parallel with described bottom surface, and another square edge is parallel with described side.
9. vapourizing unit as claimed in claim 8, it is characterized in that, described right-angle triangle is isosceles right triangle.
10. vapourizing unit as claimed in claim 3, it is characterized in that, described channel shaped is formed on described side, and described trilateral is less than or equal to 90 degree near the limit of described bottom surface and the angle of described side.
11. vapourizing units as claimed in claim 1, it is characterized in that, the opening size of described groove is not more than 2mm and is not less than 1mm.
12. vapourizing units as claimed in claim 1, it is characterized in that, described channel shaped is formed on described side, and the bearing of trend of described groove is parallel with described bottom surface.
13. vapourizing units as claimed in claim 1, it is characterized in that, described channel shaped is formed on described side, the bearing of trend of described groove and described plane perpendicular.
14. vapourizing units as claimed in claim 1, it is characterized in that, described channel shaped is formed on described side, and bearing of trend and the described bottom surface of described groove have angle, and described angle is more than or equal to 3 ° and is less than or equal to 60 °.
15. vapourizing units as claimed in claim 14, it is characterized in that, described angle is more than or equal to 20 ° and is less than or equal to 50 °.
16. vapourizing units as claimed in claim 1, is characterized in that, be provided with resistive heater in the chamber wall of described heating cavity.
17. vapourizing units as claimed in claim 1, it is characterized in that, the chamber wall of described heating cavity is outside equipped with silicon rubber heater.
18. vapourizing units as claimed in claim 1, it is characterized in that, the end face of described heating cavity has liquid feed valve and air outlet valve, and described liquid feed valve is connected with liquid source of supply, and described air outlet valve is connected with the supply line of production unit reaction cavity.
19. vapourizing units as claimed in claim 1, it is characterized in that, the end face of described heating cavity has weather gauge.
20. vapourizing units as claimed in claim 1, is characterized in that also having liquid level detector in described heating cavity.
21. 1 kinds of gasification methods using vapourizing unit described in claim 1, it is characterized in that, described gasification method is used for carrying out DEZ vaporization, and the vapourizing unit that heat transfer efficiencies is high by adopting, internal liquid is heated evenly reduces the danger in vaporescence, comprising:
In heating cavity, inject liquid to be vaporized, detect the liquid level of described liquid; When described liquid level arrives pre-implant position, stop injecting liquid; Heating cavity is heated to initial target temperature.
22. gasification methods as claimed in claim 21, is characterized in that, described pre-implant position be lower than heating cavity total height 1/2 position.
23. gasification methods as claimed in claim 21, is characterized in that, described in liquid to be vaporized be liquid DEZ, described initial target temperature is less than 70 DEG C.
24. gasification methods as claimed in claim 23, is characterized in that, described in be heated to initial target temperature adopt substep successively heat up.
25. gasification methods as claimed in claim 23, is characterized in that, also comprise Offered target pressure, detect the vapour pressure in heating cavity, and the temperature in adjustment heating cavity, makes described vapour pressure equal target, pressure.
26. gasification methods as claimed in claim 25, it is characterized in that, the temperature in described adjustment heating cavity comprises: keep vapour pressure to be not less than target, pressure, reduce the temperature in heating cavity.
27. gasification methods as claimed in claim 25, it is characterized in that, the temperature in described adjustment heating cavity comprises: if vapour pressure is less than target, pressure, under keeping the temperature in heating cavity to be less than the prerequisite of 70 DEG C, improves the temperature in heating cavity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010575296.1A CN102485952B (en) | 2010-12-06 | 2010-12-06 | Vapourizing unit and gasification method |
| PCT/CN2011/078065 WO2012075824A1 (en) | 2010-12-06 | 2011-08-05 | Vaporization device and vaporization method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010575296.1A CN102485952B (en) | 2010-12-06 | 2010-12-06 | Vapourizing unit and gasification method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102485952A CN102485952A (en) | 2012-06-06 |
| CN102485952B true CN102485952B (en) | 2015-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010575296.1A Expired - Fee Related CN102485952B (en) | 2010-12-06 | 2010-12-06 | Vapourizing unit and gasification method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102485952B (en) |
| WO (1) | WO2012075824A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305803B (en) * | 2013-05-23 | 2015-05-20 | 四川虹视显示技术有限公司 | Temperature control system-based evaporation temperature control method for OLED (Organic Light Emitting Diode) organic layer |
| CN113930738B (en) * | 2020-06-29 | 2023-09-12 | 宝山钢铁股份有限公司 | Metal vapor modulation device for vacuum coating and modulation method thereof |
| CN114786451B (en) * | 2022-06-20 | 2022-09-20 | 浙江大华技术股份有限公司 | Liquid cooling heat abstractor and heat dissipation circulation system |
| CN115323360B (en) * | 2022-10-17 | 2023-03-24 | 上海星原驰半导体有限公司 | Precursor output system and precursor output method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06256036A (en) * | 1993-03-03 | 1994-09-13 | Sumitomo Electric Ind Ltd | Raw material feeder |
| CN1421542A (en) * | 2001-11-29 | 2003-06-04 | 电子科技大学 | Organic material evaporating source |
| CN1958836A (en) * | 2005-11-04 | 2007-05-09 | 通用电气公司 | Container for vaporizing metal and method for manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1382713B1 (en) * | 2002-07-19 | 2006-05-17 | Lg Electronics Inc. | Source for thermal physical vapour deposition of organic electroluminescent layers |
| CN2795784Y (en) * | 2005-06-15 | 2006-07-12 | 江苏中圣高科技产业有限公司 | Inner concave groove structure high efficiency heat exchanger |
-
2010
- 2010-12-06 CN CN201010575296.1A patent/CN102485952B/en not_active Expired - Fee Related
-
2011
- 2011-08-05 WO PCT/CN2011/078065 patent/WO2012075824A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06256036A (en) * | 1993-03-03 | 1994-09-13 | Sumitomo Electric Ind Ltd | Raw material feeder |
| CN1421542A (en) * | 2001-11-29 | 2003-06-04 | 电子科技大学 | Organic material evaporating source |
| CN1958836A (en) * | 2005-11-04 | 2007-05-09 | 通用电气公司 | Container for vaporizing metal and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012075824A1 (en) | 2012-06-14 |
| CN102485952A (en) | 2012-06-06 |
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