CN102468243B - TFT (Thin Film Transistor) array substrate, manufacturing method and liquid crystal display device - Google Patents
TFT (Thin Film Transistor) array substrate, manufacturing method and liquid crystal display device Download PDFInfo
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- CN102468243B CN102468243B CN201010542471.7A CN201010542471A CN102468243B CN 102468243 B CN102468243 B CN 102468243B CN 201010542471 A CN201010542471 A CN 201010542471A CN 102468243 B CN102468243 B CN 102468243B
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Abstract
The embodiment of the invention provides a TFT (Thin Film Transistor) array substrate, a manufacturing method and a liquid crystal display device, and relates to the manufacture field of thin film transistor liquid crystal displays. A mask plate composition process is unnecessary to be additionally provided for shading, and the shading can be effectively guaranteed. The method comprises the following steps of: forming data lines and grid lines which are crossed with each other transversely and longitudinally on a substrate, and forming pixel units through encircling the data lines and the grid lines, wherein each pixel unit comprises a TFT switch; forming a passivating layer on the substrate; depositing a pixel electrode layer on the passivating layer; coating photoresist on the pixel electrode layer and carrying out exposure and developing to form a photoresist complete reservation area corresponding a pixel electrode area and a photoresist complete removal area corresponding to other areas; etching to remove a pixel electrode layer of the photoresist complete removal area; processing the substrate to change the surface of the passivating layer of the photoresist complete removal area to be black; and stripping to remove the photoresist of the photoresist complete removal reservation area.
Description
Technical field
The present invention relates to Thin Film Transistor-LCD and manufacture field, relate in particular to a kind of tft array substrate, manufacture method and liquid crystal indicator.
Background technology
TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) be to utilize the variation that is arranged on electric field strength on liquid crystal layer, change the degree of the rotation of liquid crystal molecule, thereby the power of control printing opacity shows image.In general, complete display panels must have by the layer of liquid crystal molecule of filling in backlight module group, polaroid, upper substrate (normally color membrane substrates) and infrabasal plate (normally array base palte) and the box that is made up of their two substrates and forms.On array base palte, be formed with data wire and grid line that transverse and longitudinal is intersected; Data wire and grid line enclose and form the pixel cell that matrix form is arranged; Each pixel cell comprises thin-film transistor (Thin Film Transistor is called for short TFT) switch and pixel electrode; Wherein, TFT switch comprises gate electrode, source electrode, drain electrode and active layer; Gate electrode connects grid line, source electrode connection data line, and drain electrode connects pixel electrode, and active layer is formed between source electrode and drain electrode and gate electrode.On underlay substrate, be generally also formed with public electrode wire, for forming storage capacitance with pixel electrode.Electric field strength between public electrode and pixel electrode changes the degree of the rotation of controlling liquid crystal molecule.The storage capacitance that can form between and public electrode wire in same layer and pixel electrode parallel with grid line on tft array substrate is used for maintaining next signal arrive before the state of liquid crystal molecule.
In the production process of tft array substrate, in order to prevent the gap light leak between pixel electrode and thin-film transistor data wire, common way is the bottom at glass substrate, and the gap location between data wire and pixel electrode arranges shading strip, in order to prevent the generation of light leak.And then between each pixel electrode area, need the place of being in the light by carrying out mask plate composition technique one time, form black graphics.
Carrying out in the production technology of above-mentioned shading, inventor finds in prior art, the one, increase mask plate composition technique, and increase manufacturing cost, reduce production efficiency; The 2nd, in the time that aligning accuracy is poor, the spacing between pixel electrode and data wire will increase, and existing method can not ensure shading completely, has increased the possibility of light leak, affects picture quality.
Summary of the invention
Embodiments of the invention provide a kind of tft array substrate, manufacture method and liquid crystal indicator, without increase mask plate composition technique for shading, have reduced manufacturing cost, have improved production efficiency, and can effectively ensure shading, have ensured the quality of picture.
For achieving the above object, embodiments of the invention adopt following technical scheme:
The embodiment of the present invention provides a kind of tft array substrate manufacture method, forms data wire and grid line that transverse and longitudinal is intersected on substrate, and described data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch; Wherein, described TFT switch comprises gate electrode, source electrode, drain electrode and active layer,
On the described substrate that is formed with said structure, form passivation layer;
Pixel deposition electrode layer on the described substrate that is formed with passivation layer;
On described pixel electrode layer, apply photoresist, and expose, develop, form the complete reserve area of photoresist and photoresist and remove region completely, the complete reserve area respective pixel of described photoresist electrode zone, described photoresist is removed corresponding other regions, region completely;
Etching is removed photoresist and is removed the pixel electrode layer in region completely;
Substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black;
Peel off the photoresist of removing the complete reserve area of photoresist.
The embodiment of the present invention also provides a kind of tft array substrate, comprising:
Substrate; On described substrate, be formed with data wire and grid line that transverse and longitudinal is intersected; Described data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch, and wherein, described TFT switch comprises gate electrode, source electrode, drain electrode and active layer; On described substrate, be formed with passivation layer; On passivation layer, respective pixel unit area is formed with pixel electrode area;
The part of the corresponding described pixel electrode area of described passivation layer is transparent;
The part surface in corresponding other regions of described passivation layer is black.
The embodiment of the present invention also provides a kind of liquid crystal indicator, comprises above-mentioned tft array substrate and color membrane substrates, and black matrix is not set on described color membrane substrates.
Tft array substrate, manufacture method and liquid crystal indicator that the embodiment of the present invention provides form data wire and grid line that transverse and longitudinal is intersected on substrate, and data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch; Wherein, TFT switch comprises gate electrode, source electrode, drain electrode and active layer; Form passivation layer on substrate after, then on the substrate that is formed with passivation layer pixel deposition electrode layer; On pixel electrode layer, apply photoresist, and expose, develop, form the complete reserve area of photoresist and photoresist and remove region completely, the complete reserve area respective pixel of photoresist electrode zone, photoresist is removed corresponding other regions, region completely; Etching is removed photoresist and is removed the pixel electrode layer in region completely; Substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black; Peel off the photoresist of removing the complete reserve area of photoresist.Like this, because the surface of the passivation layer between each pixel electrode area is black, thereby omit the mask plate composition technique of carrying out for shading in prior art, reduced manufacturing cost, improved production efficiency.Have, because the passivation layer surface between pixel electrode area becomes the black of shading, i.e. seamless link between the black layer of shading and pixel electrode, even if aligning accuracy is poor like this, also can realize shading well, has ensured the quality of picture again.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The FB(flow block) of the tft array substrate manufacture method that Fig. 1 provides for the embodiment of the present invention;
The schematic top plan view of the tft array substrate that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is that the A-A of Fig. 2 is to schematic cross-section;
In the tft array substrate manufacture method that Fig. 4 provides for the embodiment of the present invention, spray the schematic diagram of black dyes;
In the tft array substrate manufacture method that Fig. 5 provides for the embodiment of the present invention, soak the schematic diagram of black dyes;
In the tft array substrate manufacture method that Fig. 6 provides for the embodiment of the present invention, apply the schematic diagram of black resin material;
The schematic top plan view of another tft array substrate that Fig. 7 provides for the embodiment of the present invention;
Fig. 8 is that the A-A of Fig. 7 is to schematic cross-section;
Fig. 9 is that another A-A of Fig. 7 is to schematic cross-section.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The tft array substrate manufacture method that the embodiment of the present invention provides, as shown in Figure 1, its step comprises:
S101, on glass substrate, form the first conductive film, obtain grid line and gate electrode by composition PROCESS FOR TREATMENT.
Concrete, can use magnetically controlled sputter method, on glass substrate, prepare a layer thickness at 1000 to 7000 metallic film.Metal material can adopt the metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper conventionally, also can use the combining structure of above-mentioned different materials film.Then, with mask by exposure, development, etching, the composition PROCESS FOR TREATMENT such as peel off, on the certain area of glass substrate, form many horizontal grid lines and the gate electrode being connected with grid line.
S102, on grid line, form gate insulation layer, the gate electrode of corresponding grid line forms active layer on gate insulation layer.
Concrete, can utilize chemical vapor deposition method successive sedimentation thickness on glass substrate is that 1000 to 6000 grid electrode insulating layer film and thickness are 1000 to 6000 amorphous silicon membrane and n+ amorphous silicon membrane, can be also depositing metal oxide semiconductive thin film on grid electrode insulating layer film.Normally silicon nitride of the material of grid electrode insulating layer, also can use silica and silicon oxynitride etc.Amorphous silicon membrane is exposed with the mask of active layer, afterwards this amorphous silicon membrane is carried out to dry etching, above gate electrode, form active layer.
Concrete, if depositing metal oxide semiconductive thin film is as active layer on grid electrode insulating layer film, metal oxide semiconductor films is carried out to a composition technique and can form active layer, after photoresist applies, with common mask to base board to explosure, development, etching formation active layer.
If what form on grid electrode insulating layer is amorphous silicon membrane and n+ amorphous silicon membrane, need to, in step S103, carry out etching to the n+ amorphous silicon membrane of raceway groove top, to form raceway groove.
S103, on gate insulation layer, form the second conductive film, on the second conductive film, apply photoresist, obtain data wire and source electrode, drain electrode by composition PROCESS FOR TREATMENT afterwards.This source electrode, drain electrode and active layer, gate electrode form thin-film transistor.
Concrete, can adopt and prepare the similar method of grid line, on glass substrate, deposit thickness that one deck is similar to grid metal at 1000 to 7000 metallic films.Form data wire and source electrode, drain electrode by composition PROCESS FOR TREATMENT at certain area.Source electrode, drain electrode form raceway groove by active layer, and form thin-film transistor together with gate electrode.
S104, on the substrate that is formed with said structure, form transparent passivation layer, and form via hole in drain electrode position.
Concrete, adopt and grid electrode insulating layer and the similar method of active layer, on whole glass substrate, apply a layer thickness at 1000 to 6000 passivation layer, its material is silicon nitride or transparent organic resin material normally.Now grid line, above data wire, be coated with passivation layer.By mask, utilize the composition PROCESS FOR TREATMENT such as exposure and etching, form in drain electrode position and connect via hole.
S105, on transparent passivation layer pixel deposition electrode layer.
Concrete, adopt and grid electrode insulating layer and the similar method of active layer, on the passivation layer of whole glass substrate, deposit one deck pixel electrode layer.Conventional pixel electrode is ITO (Indium Tin Oxides, indium tin oxide) or IZO (Indium Zinc Oxide, indium-zinc oxide), and thickness is between 100 to 1000.
S106, on this pixel electrode layer, apply photoresist, and expose, development, etching processing.
Concrete, on the pixel electrode layer of deposition, apply one deck photoresist, then use mask, expose, develop, form the complete reserve area of photoresist and photoresist and remove region completely, the complete reserve area respective pixel of photoresist electrode zone, photoresist is removed corresponding other regions, region completely, and etching is removed photoresist and is removed the pixel electrode layer in region completely.In this step S106, wouldn't carry out lift-off processing.
After this step S106, obtain tft array substrate as shown in Figure 2.In Fig. 2, comprising: grid line 1, data wire 2, the complete reserve area respective pixel of photoresist electrode zone 3, oblique line part is that etching is removed photoresist and removed exposed transparent passivation layer after the pixel electrode layer in region completely.
Fig. 3 is that the A-A of Fig. 2 is to sectional view.In Fig. 3, comprising: glass substrate 4, gate insulation layer 5, data wire 2, transparent passivation layer 6, the pixel electrode 31 being covered by photoresist 32, unstripped photoresist (photoresist of the complete reserve area of photoresist) 32.
S107, substrate is processed, the passivation layer surface that makes photoresist remove region completely becomes black.
Concrete, a kind of processing mode is, the tft array substrate spray black dyes that step S106 is obtained reaches certain hour, as shown in Figure 4, black dyes is infiltered in the photoresist 32 and exposed passivation layer 6 of the unstripped complete reserve area of photoresist, thereby cause the surface of exposed transparent passivation layer 6 to become black.
Another method is, the tft array substrate that step S106 is obtained is put into and in black dyes, reaches certain hour, as shown in Figure 5, black dyes is infiltered in the photoresist 32 and exposed passivation layer 6 of the unstripped complete reserve area of photoresist, thereby cause the surface of exposed transparent passivation layer 6 to become black.
The third method is, applies black resin material at step S106 on the tft array substrate obtaining, and makes the surface of the surface of this exposed transparent passivation layer 6 and the photoresist 32 of the complete reserve area of photoresist become black.
S108, peel off the photoresist of removing photoresist complete reserve area.
After the photoresist of the complete reserve area of photoresist 32 is peeled off, obtain tft array substrate as shown in Figure 7.Passivation layer surface between each pixel electrode area 3 is black, and the passivation layer of each pixel electrode area 3 belows is transparent.Fig. 8 and Fig. 9 be the A-A of Fig. 7 to sectional view, the black of the passivation layer surface shown in Fig. 8 is for spray or soak and form, the black of the passivation layer surface shown in Fig. 9 forms for applying black resin material.
After step S108, can proceed other technological processes that tft array is manufactured substantially.
Tft array substrate manufacture method that the embodiment of the present invention provides forms data wire and grid line that transverse and longitudinal is intersected on substrate, and data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch; Wherein, TFT switch comprises gate electrode, source electrode, drain electrode and active layer; Form passivation layer on substrate after, then on the substrate that is formed with passivation layer pixel deposition electrode layer; On pixel electrode layer, apply photoresist, and expose, develop, form the complete reserve area of photoresist and photoresist and remove region completely, the complete reserve area respective pixel of photoresist electrode zone, photoresist is removed corresponding other regions, region completely; Etching is removed photoresist and is removed the pixel electrode layer in region completely; Substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black; Peel off the photoresist of removing the complete reserve area of photoresist.Like this, because the surface of the passivation layer between each pixel electrode area is black, thereby omit the mask plate composition technique of carrying out for shading in prior art, reduced manufacturing cost, improved production efficiency.Have, because the passivation layer surface between pixel electrode area becomes the black of shading, i.e. seamless link between the black layer of shading and pixel electrode, even if aligning accuracy is poor like this, also can realize shading well, has ensured the quality of picture again.
In addition, because the passivation layer surface between pixel electrode area becomes the black of shading, i.e. seamless link between the black layer of shading and pixel electrode, even if aligning accuracy is poor like this, also can realize shading well, has ensured the quality of picture.
Have, the processing procedure of carrying out shading that the embodiment of the present invention provides, is by original passivation layer is processed again, and the section that can reduce like this tft array substrate is poor, makes the evenness of substrate better, is conducive to ensure the product performance of substrate.
The tft array substrate that the embodiment of the present invention provides, comprising: substrate; On substrate, be formed with data wire and grid line that transverse and longitudinal is intersected; Data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch, and wherein, TFT switch comprises gate electrode, source electrode, drain electrode and active layer; On this substrate, be formed with passivation layer; On passivation layer, respective pixel unit area is formed with pixel electrode area.
Describe with reference to accompanying drawing 7,8,9, the vertical view of the tft array substrate that Fig. 7 provides for the embodiment of the present invention, the A-A that Fig. 8, Fig. 9 are Fig. 7 is to sectional view.Concrete, in Fig. 7, indicate that pixel cell 3, Fig. 8 Fig. 9 indicate glass substrate 4, gate insulation layer 5, data wire 2, passivation layer 6, and pixel electrode layer 31.
The tft array substrate that the embodiment of the present invention provides, the part of passivation layer 6 respective pixel electrode zones 31 is transparent; The part surface in corresponding other regions of passivation layer 6 (not respective pixel electrode zone 31) is black.
The part surface in passivation layer 6 corresponding other regions on the tft array substrate shown in Fig. 8 is black, is because these part passivation layer 6 infiltrations have black dyes.
The part surface in passivation layer 6 corresponding other regions on the tft array substrate shown in Fig. 9 is black, is because the surface-coated of this part passivation layer 6 has black resin material.
The tft array substrate that the embodiment of the present invention provides, comprising: substrate; On substrate, be formed with data wire and grid line that transverse and longitudinal is intersected; Data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch, and wherein, TFT switch comprises gate electrode, source electrode, drain electrode and active layer; On this substrate, be formed with passivation layer; On passivation layer, respective pixel unit area is formed with pixel electrode area.The part of passivation layer respective pixel electrode zone is transparent; The part surface in corresponding other regions is black.Like this, omit the mask plate composition technique of carrying out for shading in prior art, reduced manufacturing cost, improved production efficiency.
In addition, because the passivation layer surface between pixel electrode area becomes the black of shading, i.e. seamless link between the black layer of shading and pixel electrode, even if aligning accuracy is poor like this, also can realize shading well, has ensured the quality of picture.
Have, the processing procedure of carrying out shading that the embodiment of the present invention provides, is by original passivation layer is processed again, and the section that can reduce like this tft array substrate is poor, makes the evenness of substrate better, is conducive to ensure the product performance of substrate.
The liquid crystal indicator that the embodiment of the present invention provides, comprises tft array substrate and color membrane substrates that above-described embodiment obtains, and black matrix is not set on this color membrane substrates.
Because tft array substrate is transparent by making the part of passivation layer respective pixel electrode zone, the part surface in corresponding other regions is black; Solved well Problem of Shading, thereby color membrane substrates is without black matrix is set again, thereby omitted relevant mask plate composition technique, reduced manufacturing cost, improved production efficiency.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art the present invention disclose technical scope in; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (7)
1. a tft array substrate manufacture method forms data wire and grid line that transverse and longitudinal is intersected on substrate, and described data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch; Wherein, described TFT switch comprises gate electrode, source electrode, drain electrode and active layer, it is characterized in that,
On the described substrate that is formed with said structure, form passivation layer;
Pixel deposition electrode layer on the described substrate that is formed with passivation layer;
On described pixel electrode layer, apply photoresist, and expose, develop, form the complete reserve area of photoresist and photoresist and remove region completely, the complete reserve area respective pixel of described photoresist electrode zone, described photoresist is removed region respective pixel electrode layer other regions except pixel electrode area completely;
Etching is removed photoresist and is removed the pixel electrode layer in region completely;
Substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black;
Peel off the photoresist of removing the complete reserve area of photoresist, on substrate, form pixel electrode.
2. tft array substrate manufacture method according to claim 1, is characterized in that, substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black and comprises:
To described substrate spray or soak black dyes and reach certain hour, the surface that makes described black dyes penetrate into photoresist to remove the passivation layer in region completely, the surface that makes this photoresist remove the passivation layer in region completely becomes black.
3. tft array substrate manufacture method according to claim 1, is characterized in that, substrate is processed, and the passivation layer surface that makes photoresist remove region completely becomes black and comprises:
On described substrate, apply black resin material, the surface that makes photoresist remove the passivation layer in region completely becomes black.
4. a tft array substrate, comprising:
Substrate; On described substrate, be formed with data wire and grid line that transverse and longitudinal is intersected; Described data wire and grid line enclose formation pixel cell, and each pixel cell comprises TFT switch, and wherein, described TFT switch comprises gate electrode, source electrode, drain electrode and active layer; On described substrate, be formed with passivation layer; On passivation layer, respective pixel unit area is formed with pixel electrode area; It is characterized in that,
Described passivation layer is formed with pixel electrode on pixel electrode area;
The part of the corresponding described pixel electrode area of described passivation layer is transparent;
The part surface in corresponding other regions of described passivation layer is formed as black in the time forming pixel electrode.
5. tft array substrate according to claim 4, is characterized in that, the part surface infiltration in corresponding other regions of described passivation layer has black dyes.
6. tft array substrate according to claim 4, is characterized in that, the part surface in corresponding other regions of described passivation layer is coated with black resin material.
7. a liquid crystal indicator, is characterized in that, comprises tft array substrate claimed in claim 4 and color membrane substrates, and black matrix is not set on described color membrane substrates.
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| CN102809860B (en) | 2012-08-13 | 2015-08-05 | 北京京东方光电科技有限公司 | The manufacture method of a kind of array base palte, display device and a kind of array base palte |
| CN103149763B (en) * | 2013-02-28 | 2016-04-13 | 京东方科技集团股份有限公司 | TFT-LCD array substrate, display panel and preparation method thereof |
| CN103698894B (en) * | 2013-12-27 | 2015-12-02 | 合肥京东方光电科技有限公司 | A kind of passive polarization type three-dimensional display apparatus and preparation method thereof |
| CN103824865B (en) * | 2014-02-14 | 2017-01-25 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
| US20150346478A1 (en) * | 2014-05-30 | 2015-12-03 | Qualcomm Mems Technologies, Inc. | Protection of Thin Film Transistors in a Display Element Array from Visible and Ultraviolet Light |
| CN106249549A (en) * | 2016-10-21 | 2016-12-21 | 南京华东电子信息科技股份有限公司 | The method that organic membrane technology and ito thin film technology share mask plate |
| TWI728909B (en) * | 2020-09-02 | 2021-05-21 | 凌巨科技股份有限公司 | Structure of pixel |
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| US7259806B1 (en) * | 1999-08-07 | 2007-08-21 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device with light absorbing layers |
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| CN101819362A (en) * | 2009-02-27 | 2010-09-01 | 北京京东方光电科技有限公司 | TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof |
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| KR101198819B1 (en) * | 2003-06-25 | 2012-11-07 | 엘지디스플레이 주식회사 | Color Filter on Thin Film Transistor Array Structure Liquid Crystal Display Device and Method for fabricating the same |
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| US7259806B1 (en) * | 1999-08-07 | 2007-08-21 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device with light absorbing layers |
| CN101149542A (en) * | 2006-09-22 | 2008-03-26 | 北京京东方光电科技有限公司 | Liquid crystal display device with color film on thin-film transistor and its manufacture method |
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Effective date of registration: 20141202 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |